CN115102025A - Method for detecting optimal position of semiconductor laser diode beam combining reflector - Google Patents
Method for detecting optimal position of semiconductor laser diode beam combining reflector Download PDFInfo
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- CN115102025A CN115102025A CN202211023298.9A CN202211023298A CN115102025A CN 115102025 A CN115102025 A CN 115102025A CN 202211023298 A CN202211023298 A CN 202211023298A CN 115102025 A CN115102025 A CN 115102025A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
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Abstract
The application discloses a method for detecting the optimal position of a beam combining reflector of a semiconductor laser diode, which is used for carrying out simulation calculation on the width of a light spot before and after the light spot is cut and calculating the theoretical variation P of the width of the light spot theory (ii) a Calculating the actual spot width W when not cutting original (ii) a The reflector is moved downwards, and the actual light spot width W after the reflector is moved is calculated truncated (ii) a Calculating the actual variation P of the width of the light spot actual (ii) a Judging the actual variation P of the light spot width actual Whether or not it is larger than the theoretical variation P of the width of the light spot theory (ii) a If P actual Greater than P theory If so, stopping the movement of the reflector, and enabling the reflector to be at the optimal position; if P actual Not more than P theory The mirror continues to move downward until P actual Greater than P theory . The application discloses a semiconductor laser diode closes beam reflector optimum position and examinesThe measuring method dynamically monitors the width of a light spot in the moving process of the reflector so as to optimize the position of the reflector, so that the monitoring result of the position of the reflector is not influenced by internal or external factors, and the height position of the reflector is quickly and accurately optimized.
Description
Technical Field
The application relates to the technical field of semiconductor lasers, in particular to a method for detecting the optimal position of a beam combining reflector of a semiconductor laser diode and a preparation method thereof.
Background
The semiconductor laser diode has the advantages of high electro-optic conversion efficiency, compact structure, low cost, long service life and the like, and is widely applied to the fields of industry, scientific research, medicine, national defense and the like. However, since the output power of a single semiconductor laser diode is low, in order to increase the output power, it is generally necessary to combine the output beams of a large number of semiconductor laser diodes into one beam by spatial beam combination and output the beam.
The divergence angle of the output beam of the semiconductor laser diode is over 10 degrees along the fast axis (usually vertical direction) and the slow axis (usually horizontal direction), so the output beam needs to be collimated before being used. The fast axis beam quality is good, the slow axis beam quality is poor, in order to balance the fast axis beam quality and the slow axis beam quality, the light spot stacking is usually selected to be carried out in the fast axis direction. In order to reduce the deterioration of the beam quality caused by spatial beam combination as much as possible, the semiconductor laser diode chips are arranged in a vertical direction with a small height difference, each chip is provided with a reflecting mirror, and the output beam is deflected by 45 degrees and then rearranged, so that the central position and the directivity of each spot are consistent. Since each chip has a slight height difference, each mirror also has a slight height difference. The height of the reflector needs to be accurately controlled, and when the height is optimal, light spots can completely penetrate through the reflector; when the height is too high, the reflector can shield other light spots, and the output power is reduced; when the height is too low, the light beam cannot be completely reflected, and the light spot is cut by the reflector, which also reduces the output power.
The conventional mirror position detecting method detects the power of a reflected light beam of a mirror by using a power meter or a photodiode, and optimizes the mirror position by a change in the power. However, the power supply output of the laser diode, the power meter and the data acquired by the photodiode current detection device are affected by the ambient temperature, the interference between the devices, the electromagnetic characteristics of the device and the like, and have volatility, so that the current measurement power is lower or higher than the initial measurement power, and the optimal position of the reflector cannot be truly reflected.
Disclosure of Invention
In order to solve one or more of the above problems, the present application proposes a method for detecting an optimal position of a beam combining mirror of a semiconductor laser diode.
According to an aspect of the present application, there is provided a method for detecting an optimal position of a semiconductor laser diode beam combining mirror, including the steps of:
carrying out simulation calculation on the light spot width before and after cutting the light spot to obtain the simulation light spot width W when the light spot is not cut 1 And the width W of the simulated facula after cutting 2 ；
Calculating the theoretical variation P of the width of the light spot theory ，P theory =W 2 /W 1 *100%；
Setting a detection light path, and carrying out near-field imaging on the light spot to acquire a light spot image;
the height of the reflector in the detection light path is increased to prevent the reflector from cutting the light spot, the light spot image when the light spot is not cut is obtained, and the actual light spot width W when the light spot is not cut is calculated original ；
The reflector is moved downwards to obtain the spot image after the reflector is moved, and the actual spot width W after the reflector is moved is calculated truncated ；
Calculating the actual variation P of the width of the light spot actual ，P actual =W truncated /W original *100%；
Judging the actual variation P of the light spot width actual Whether or not the theoretical variation of the spot width P is larger than theory ；
If P actual Greater than P theory If so, stopping the movement of the reflector, and enabling the reflector to be at the optimal position; if P actual Not more than P theory Then the mirror continues to move downward until P actual Greater than P theory 。
In some embodiments, the simulation calculation of the light spot width before and after the light spot cutting comprises the following steps:
setting a simulation light path which comprises a semiconductor laser diode, a first collimating lens F1, a first focusing lens F2 and a simulation detection device;
beam waist radius w for a semiconductor laser diode beam 0 Divergence angle theta, focal length F of first collimating lens F1 1 Carrying out simulation to obtain the intensity distribution of the light spot when not cut and the width W of the simulated light spot when not cut 1 ；
Obtaining a light spot cutting position according to a pre-designed central distance h between adjacent light spots, and setting the light spot intensity of the light spot cutting position to be 0;
the intensity of the light spot after cutting the light spot and the focal length F of the first focusing lens F2 2 Adding simulation to obtain the light spot intensity distribution at the position of the detection device after cutting to obtain the simulated light spot width W after cutting 2 。
In some embodiments, the first collimating lens F1 is disposed on the side of the semiconductor laser diode, the first focusing lens F2 is disposed on the side of the first collimating lens F1 away from the semiconductor laser diode, and the emulation detecting means is disposed on the side of the first focusing lens F2 away from the first collimating lens F1.
In some embodiments, the simulation calculation of the spot width before and after the spot cutting uses one of fraunhofer diffraction theory, finite frequency domain difference method, and finite element method.
In some embodiments, the detection optical path includes a semiconductor laser diode, a second collimating lens F3, a reflecting mirror, a second focusing lens F4, and a detector, the second collimating lens F3 is disposed between the semiconductor laser diode and the reflecting mirror, the second focusing lens F4 is disposed between the detector and the reflecting mirror, the detector is disposed at a focal plane of the second focusing lens F4, and a light beam emitted by the semiconductor laser diode sequentially passes through the second collimating lens F3, the reflecting mirror, and the second focusing lens F4 to reach the detector.
In some embodiments, the detection element of the detector is a CCD or CMOS.
In some embodiments, the actual spot width W is calculated when uncut original And the actual spot width W after the mirror movement truncated The method comprises the following steps:
acquiring a light spot image collected in a detection light path;
projecting the light spot intensity in the light spot image to the slow axis direction to obtain a projection curve;
normalizing the projection curve;
performing curve binarization processing on the curve after the normalization processing, setting the value of a point on the curve, which is greater than the light intensity I, as 1, and setting the value of the point on the curve, which is not greater than the light intensity I, as-1;
obtaining the position of the first occurrence of [ -1,1] on the curve, and recording as Index _ left;
obtaining the position of the first occurrence [1, -1] on the curve, and marking as Index _ right;
calculating W original = Index _ right-Index _ left or calculate W truncatedl =Index_right-Index_left。
In some embodiments, the intensity I is 1/e 2 。
The application discloses a semiconductor laser diode beam combining reflector optimal position detection method, through dynamic monitoring facula width in the reflector motion process, and then optimize the reflector position for the monitoring result of reflector position does not receive inside or outside factor influence, realizes the quick and accurate optimization of reflector height.
Drawings
Fig. 1 is a flowchart of a method for detecting an optimal position of a beam combining mirror of a semiconductor laser diode according to an embodiment of the present disclosure.
Fig. 2 is a flowchart of a method for performing simulation calculation on the width of a light spot before and after cutting of the light spot according to an embodiment of the present application.
Fig. 3 is a schematic diagram of a simulated optical path according to an embodiment of the present application.
Fig. 4 a-4 d are schematic diagrams of simulation results provided by an embodiment of the present application.
Fig. 5 is a schematic diagram of a detection optical path according to an embodiment of the present application.
Fig. 6 is a flowchart of a method for calculating an actual spot width when the laser is not cut and an actual spot width after the mirror moves according to an embodiment of the present application.
Fig. 7 a-7 c are processed projection curves corresponding to steps 402 to 404 according to an embodiment of the present disclosure.
Fig. 8a to 8c are actual measurement images of the light spot when the semiconductor laser chip beam combining reflector provided by the embodiment of the present application is cut at different positions.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the detailed description and specific examples, while indicating some embodiments of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "inner", "outer", "both ends", "both sides", "bottom", "top", etc., indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the elements referred to must have a particular orientation or be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention. Furthermore, the terms "first," "second," "upper," "lower," "primary," "secondary," and the like are used for descriptive purposes only and may be used for purposes of simplicity in more clearly distinguishing between various components and not to indicate or imply relative importance.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The embodiment of the invention provides a method for detecting the optimal position of a beam combining reflector of a semiconductor laser diode. Referring to the specification and the attached figure 1, the method for detecting the optimal position of the beam combining reflector of the semiconductor laser diode is shown, and specifically comprises the following steps:
step 11: carrying out simulation calculation on the light spot width before and after cutting the light spot to obtain the simulation light spot width W when the light spot is not cut 1 And the width W of the simulated facula after cutting 2 。
In the present disclosure, the fast axis is the vertical direction and the slow axis is the horizontal direction. In the present disclosure, the width of the light spot refers to the width of the light spot in the fast axis direction when not specifically described, and will not be described in detail later.
In an optional embodiment, any one of physical optical simulation methods such as fraunhofer diffraction theory, finite frequency domain difference method and finite element method may be used for performing simulation calculation on the light spot width before and after cutting the light spot.
In an alternative embodiment, referring to fig. 2 of the specification, the simulation calculation of the width of the light spot before and after the cutting of the light spot may include the following steps:
step 101: setting a simulation light path which comprises a semiconductor laser diode, a first collimating lens F1, a first focusing lens F2 and a simulation detection device;
step 102: beam waist radius w for a semiconductor laser diode beam 0 Divergence angle θ, focal length F of first collimating lens F1 1 Performing simulation to obtain the intensity distribution of the light spot when not cut and obtain the width W of the simulated light spot when not cut 1 ；
Step 103: obtaining a light spot cutting position according to a pre-designed central distance h between adjacent light spots, and setting the light spot intensity of the light spot cutting position to be 0;
step 104: the intensity of the light spot after cutting the light spot and the focal length F of the first focusing lens F2 2 Adding simulation to obtain the light spot intensity distribution at the position of the detection device after cutting to obtain the simulated light spot width W after cutting 2 。
Specifically, referring to fig. 3 in the specification, a schematic diagram of a simulated optical path is shown, in which an arrow direction is a direction of a light beam emitted by a semiconductor laser diode, a first collimating lens F1 is disposed on one side of the semiconductor laser diode in the simulated optical path, a first focusing lens F2 is disposed on one side of the first collimating lens F1 away from the semiconductor laser diode, a simulation detecting device is disposed on one side of the first focusing lens F2 away from the first collimating lens F1, and a light spot is cut between the first collimating lens F1 and the first focusing lens F2.
In the present embodiment, the light intensity I =1/e is used 2 The simulation and calculation are carried out, because the output beam of the semiconductor laser diode can be calculated by using Gaussian beam transmission and transformation theory, and the calculation results are that the light intensity is I =1/e 2 The result of (1).
Specifically, the beam waist radius w of the semiconductor laser diode beam in step 102 0 The light intensity I is 1/e 2 The beam waist radius and the divergence angle theta are such that the light intensity I is 1/e 2 The half angle divergence angle of the time, the unit of divergence angle θ is radian.
Specifically, the simulation parameters are set as follows, the beam waist radius w of the semiconductor laser diode beam 0 0.8um, divergence angle theta 0.4rad, focal length F of the first collimating lens F1 1 0.3mm, the focal length F of the first focusing lens F2 2 Which is 150mm, the simulation results are shown in fig. 4 a-4 d with reference to the description.
Wherein, the description attached figure 4a shows the simulated light spot intensity when not cutting, and the simulated light spot width W when not cutting can be obtained from the simulation result 1 Is 800 um. FIG. 4b shows the simulated spot intensity when the spot cut position is at 1% of the maximum intensity, from which the uncut simulated spot width W can be derived 2 Is 817 um. FIG. 4c shows the simulated spot intensity when the spot cut position is at 13.5% of the maximum intensity, from which the uncut simulated spot width W can be derived 2 Is 899 um. FIG. 4d shows the simulated spot intensity when the spot cut position is at 50% of the maximum intensity, from which the uncut simulated spot width W can be derived 2 Is 1036 um.
In an alternative embodiment, in step 103, when the center distance h between adjacent light spots is 320um, the cutting position of the light spot is 13.5% of the highest intensity; when the center distance h of the adjacent light spots is 192um, the cutting position of the light spot is 50% of the highest intensity.
Step 12: calculating the theoretical variation P of the width of the light spot theory In which P is theory =W 2 /W 1 *100%。
Step 13: and a detection light path is arranged to carry out near-field imaging on the light spot so as to acquire a light spot image.
In an alternative embodiment, referring to fig. 5 of the specification, a detection optical path is shown, the detection optical path includes a semiconductor laser diode, a second collimating lens F3, a reflecting mirror, a second focusing lens F4 and a detector, the second collimating lens F3 is disposed between the semiconductor laser diode and the reflecting mirror, the second focusing lens F4 is disposed between the detector and the reflecting mirror, the detector is disposed at a focal plane of the second focusing lens F4, and a light beam emitted by the semiconductor laser diode sequentially passes through the second collimating lens F3, the reflecting mirror and the second focusing lens F4 to reach the detector.
Specifically, the detecting element of the detector may be a CCD or a CMOS.
Therefore, by setting the detection light path, the near-field imaging of the light spot is realized, the purpose of collecting the light spot image can be achieved, and the light spot is monitored in the optimal position detection process of the reflector.
Step 14: the height of the reflector in the detection light path is increased to prevent the reflector from cutting the light spot, the light spot image when the light spot is not cut is obtained, and the actual light spot width W when the light spot is not cut is calculated original 。
Step 15: the reflector is moved downwards to obtain the spot image after the reflector is moved, and the actual spot width W after the reflector is moved is calculated truncated 。
In an alternative embodiment, referring to FIG. 6 of the specification, the actual spot width W is uncut original And the actual spot width W after the mirror movement truncated The calculation of (a) can be realized by the following steps:
step 401: acquiring a light spot image collected in a detection light path;
step 402: projecting the light spot intensity in the light spot image to the slow axis direction to obtain a projection curve;
step 403: normalizing the projection curve;
step 404: performing curve binarization processing on the curve after the normalization processing, setting the value of a point on the curve, which is greater than the light intensity I, as 1, and setting the value of the point on the curve, which is not greater than the light intensity I, as-1;
step 405: obtaining the position of the first occurrence [ -1,1] on the curve, and marking as Index _ left;
step 406: obtaining the position of the first occurrence [1, -1] on the curve, and marking as Index _ right;
step 407: calculating W original = Index _ right-Index _ left or calculate W truncatedl =Index_right-Index_left。
Specifically, reference may be made to fig. 7 a-7 c of the specification, where fig. 7a is a projection curve, fig. 7b is a projection curve after normalization processing, and fig. 7c is a projection curve after binarization processing.
Therefore, the algorithm for acquiring the light spot width from the light spot image is based on the relative intensity change between each pixel point, so that the algorithm is not influenced by the output power of the semiconductor laser diode and the external factors of a power supply or a detector, the optimal position of the reflector is more accurately detected, and the detection reliability is improved.
Step 16: calculating the actual variation P of the width of the light spot actual ，P actual =W truncated /W original *100%。
And step 17: judging the actual variation P of the width of the light spot actual Whether or not it is larger than the theoretical variation P of the width of the light spot theory (ii) a If P actual Greater than P theory Then go to step 18; if P actual Not more than P theory Then execution returns to step 15.
Step 18: the mirror stops moving while the mirror is in the optimal position.
Specifically, referring to fig. 8 a-8 c in the specification, the actual measurement images of the light spot when the semiconductor laser chip beam combining reflector cuts at different positions are shown, wherein fig. 8a, 8b and the drawingsThe straight line in 8c represents 1/e 2 And (4) strength. The attached figures 8 a-8 c in the specification show the change of the width of the fast axis direction of the light spot when the semiconductor laser chip beam combining reflector cuts at different positions. Fig. 8a shows a spot image when no cutting occurs, where the spot width is 234 pixels; FIG. 8b shows that when the center distance h between adjacent spots is 320um, i.e. 1/e 2 In the spot image when cutting is carried out at the intensity, the width of the spot is 263 pixel points; fig. 8c is the image of the spot when the center distance h between adjacent spots is 192 μm, i.e. cut at 50% intensity, and the spot width is 315 pixels.
The application discloses a semiconductor laser diode beam-combining reflector optimal position detection method, width before and after cutting through the facula carries out the emulation calculation, obtains facula width theoretical variable quantity, through carrying out near field imaging to actual facula, obtains actual facula image to through obtaining actual facula width to facula image processing, move down the speculum from the uncut facula department, compare the facula width theoretical variable quantity and the actual variable quantity of facula width, the final optimal position who confirms the speculum. Compared with the traditional detection method, the method does not use the change of power to optimize the position of the reflector, thereby avoiding the condition that the optimal position of the reflector is inaccurate due to power fluctuation caused by factors inside and outside a power meter or a photodiode. According to the method for detecting the optimal position of the semiconductor laser diode beam combining reflector, the width of a light spot is dynamically monitored in the movement process of the reflector, so that the position of the reflector is optimized, the monitoring result of the position of the reflector is not influenced by internal or external factors, the height of the reflector is quickly and accurately optimized, the optimal position of the reflector can be truly reflected, and the reliability is high; the detection light path and the simulation light path are simple in design, the detection efficiency is effectively improved, and the detection cost is reduced.
The foregoing is merely an alternative embodiment of the present application and it should be noted that modifications and embellishments could be made by those skilled in the art without departing from the principle of the present application and should also be considered as the scope of the present application.
Claims (8)
1. A method for detecting the optimal position of a beam combining reflector of a semiconductor laser diode is characterized by comprising the following steps:
carrying out simulation calculation on the light spot width before and after cutting the light spot to obtain the simulation light spot width W when the light spot is not cut 1 And the width W of the simulated facula after cutting 2 ；
Calculating the theoretical variation P of the width of the light spot theory ，P theory =W 2 /W 1 *100%；
Setting a detection light path, and carrying out near-field imaging on the light spot to acquire a light spot image;
the height of the reflector in the detection light path is increased to prevent the reflector from cutting the light spot, the light spot image when the light spot is not cut is obtained, and the actual light spot width W when the light spot is not cut is calculated original ；
The reflector is moved downwards to obtain the spot image after the reflector is moved, and the actual spot width W after the reflector is moved is calculated truncated ；
Calculating the actual variation P of the width of the light spot actual ，P actual =W truncated /W original *100%；
Judging the actual variation P of the light spot width actual Whether or not the theoretical variation of the spot width P is larger than theory ；
If P actual Greater than P theory If so, stopping the movement of the reflector, and enabling the reflector to be at the optimal position; if P actual Not more than P theory The mirror continues to move downward until P actual Greater than P theory 。
2. The method as claimed in claim 1, wherein the step of performing the simulation calculation on the width of the light spot before and after the light spot is cut comprises the steps of:
setting a simulation light path which comprises a semiconductor laser diode, a first collimating lens F1, a first focusing lens F2 and a simulation detection device;
beam waist radius w for semiconductor laser diode beam 0 Divergence angle theta, focal length F of first collimating lens F1 1 Performing simulation to obtain the intensity distribution of the light spot when not cut and obtain the width W of the simulated light spot when not cut 1 ；
Obtaining a light spot cutting position according to a pre-designed central distance h between adjacent light spots, and setting the light spot intensity of the light spot cutting position to be 0;
the intensity of the light spot after cutting the light spot and the focal length F of the first focusing lens F2 2 Adding simulation to obtain the light spot intensity distribution at the detection device after cutting to obtain the simulated light spot width W after cutting 2 。
3. The method as claimed in claim 2, wherein the first collimating lens F1 is disposed on a side of the semiconductor laser diode, the first focusing lens F2 is disposed on a side of the first collimating lens F1 away from the semiconductor laser diode, and the simulation detecting device is disposed on a side of the first focusing lens F2 away from the first collimating lens F1.
4. The method as claimed in claim 1, wherein the simulation calculation of the width of the light spot before and after cutting is performed by using one of fraunhofer diffraction theory, finite frequency domain difference method and finite element method.
5. The method as claimed in claim 1, wherein the detection light path comprises a semiconductor laser diode, a second collimating lens F3, a reflecting mirror, a second focusing lens F4 and a detector, the second collimating lens F3 is disposed between the semiconductor laser diode and the reflecting mirror, the second focusing lens F4 is disposed between the detector and the reflecting mirror, the detector is disposed at a focal plane of the second focusing lens F4, and a light beam emitted from the semiconductor laser diode sequentially passes through the second collimating lens F3, the reflecting mirror and the second focusing lens F4 to reach the detector.
6. The method as claimed in claim 5, wherein the detector is a CCD or a CMOS.
7. The method as claimed in claim 5, wherein the step of calculating the actual spot width W without cutting is performed by using a laser beam combining mirror original And the actual spot width W after the mirror movement truncated The method comprises the following steps:
acquiring a light spot image collected in a detection light path;
projecting the light spot intensity in the light spot image to the slow axis direction to obtain a projection curve;
normalizing the projection curve;
performing curve binarization processing on the curve after the normalization processing, setting the value of a point on the curve, which is greater than the light intensity I, as 1, and setting the value of the point on the curve, which is not greater than the light intensity I, as-1;
obtaining the position of the first occurrence [ -1,1] on the curve, and marking as Index _ left;
obtaining the position of the first occurrence [1, -1] on the curve, and marking as Index _ right;
calculating W original = Index _ right-Index _ left or calculate W truncatedl =Index_right-Index_left。
8. The method as claimed in claim 7, wherein the intensity of light I is 1/e 2 。
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| JP2001215443A (en) * | 2000-02-04 | 2001-08-10 | Hamamatsu Photonics Kk | Optical device |
| CN101806579A (en) * | 2009-02-16 | 2010-08-18 | 华为技术有限公司 | Reflector position sampling and calibrating method and device and laser |
| US20180294623A1 (en) * | 2011-10-11 | 2018-10-11 | Appotronics Corporation Limited | Light source system and laser light source |
| CN111786254A (en) * | 2020-07-15 | 2020-10-16 | 中南大学 | Array semiconductor laser reflector coupling device and method based on light spot detection |
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