CN115097894B - High-power supply rejection ratio push-pull type LDO (low dropout regulator) without off-chip capacitor - Google Patents

High-power supply rejection ratio push-pull type LDO (low dropout regulator) without off-chip capacitor Download PDF

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CN115097894B
CN115097894B CN202210856009.7A CN202210856009A CN115097894B CN 115097894 B CN115097894 B CN 115097894B CN 202210856009 A CN202210856009 A CN 202210856009A CN 115097894 B CN115097894 B CN 115097894B
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周波
郑恒
韩欣媛
李一凡
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Beijing Institute of Technology BIT
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    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
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Abstract

本发明涉及一种高电源抑制比的无片外电容的推拉型LDO,属于电源管理技术领域。将推电流模式LDO和拉电流模式LDO合二为一,解决了传统LDO只有推电流模式的问题。包含一个具有超过700MHz的单位增益频率的低增益快速环路,在不需要μF级的片外大电容的情况下实现高频电源抑制比。所述架构具有推电流和拉电流两种工作模式;推电流模式输出电压为1V,线性调整率为0.12%/V,负载调整率为0.01mV/mA,可以驱动电源噪声敏感电路;拉电流模式输出电压为0.25V,线性调整率为4.4%/V,负载调整率为0.025mV/mA,可以驱动地噪声敏感电路;两种工作模式均实现低于6ns的瞬态响应和1Hz‑1GHz频率范围内低于‑10dB的电源抑制比;不需要片外大电容,实现电路全集成。

Figure 202210856009

The invention relates to a push-pull LDO with high power supply rejection ratio and no external capacitor, which belongs to the technical field of power supply management. Combining the push current mode LDO and the pull current mode LDO into one solves the problem that the traditional LDO only has the push current mode. Contains a low-gain fast loop with a unity-gain frequency in excess of 700MHz, enabling high-frequency power-supply rejection ratios without the need for off-chip bulk capacitors in the µF range. The architecture has two working modes: push current and pull current; the output voltage of the push current mode is 1V, the linear regulation rate is 0.12%/V, and the load regulation rate is 0.01mV/mA, which can drive power supply noise sensitive circuits; the pull current mode The output voltage is 0.25V, the linear regulation rate is 4.4%/V, and the load regulation rate is 0.025mV/mA, which can drive ground noise sensitive circuits; both operating modes achieve a transient response below 6ns and a frequency range of 1Hz‑1GHz The internal power supply rejection ratio is lower than ‑10dB; no large off-chip capacitors are required to achieve full circuit integration.

Figure 202210856009

Description

一种高电源抑制比的无片外电容的推拉型LDOA Push-Pull LDO with High Power Supply Rejection Ratio and No Off-Chip Capacitor

技术领域technical field

本发明涉及一种高电源抑制比的无片外电容的推拉型LDO(低压差线性稳压器),属于电源管理技术领域。The invention relates to a push-pull LDO (low-dropout linear regulator) with high power supply rejection ratio and no external capacitor, belonging to the technical field of power supply management.

背景技术Background technique

LDO作为一种线性直流稳压装置,存在一个最小输入电压以确保LDO将输出电压维持在其额定值上下100mV之内,这个最小输入电压与额定输出电压的电压差叫做压降电压,压降电压必须大于功率晶体管的饱和电压时LDO才能正常工作,衰减输入端的电压波动并输出经过调节的稳定电压。As a linear DC voltage regulator, LDO has a minimum input voltage to ensure that the LDO maintains the output voltage within 100mV of its rated value. The voltage difference between the minimum input voltage and the rated output voltage is called dropout voltage, dropout voltage The LDO can work normally when it must be greater than the saturation voltage of the power transistor, attenuate the voltage fluctuation at the input terminal and output a regulated stable voltage.

LDO的功能主要通过负反馈控制环路实现,由基准电压模块产生一个精准、稳定的参考电压,反馈网络将输出电压的变化反馈到误差放大器的输入端,误差放大器放大反馈电压与参考电压的差值并输出给功率晶体管的栅极,驱动功率晶体管调整输出电流的大小,确保LDO输出的电压稳定在额定值范围。The function of the LDO is mainly realized through the negative feedback control loop. The reference voltage module generates an accurate and stable reference voltage. The feedback network feeds back the change of the output voltage to the input terminal of the error amplifier. The error amplifier amplifies the difference between the feedback voltage and the reference voltage. The value is output to the gate of the power transistor, and the power transistor is driven to adjust the output current to ensure that the voltage output by the LDO is stable within the rated value range.

LDO通常使用MOSFET作为功率晶体管,MOSFET是电压驱动的,不需要电流,所以大大降低了器件本身消耗的静态电流。MOSFET上的电压降大致等于输出电流与导通电阻的乘积,由于MOSFET的导通电阻很小,因而它的饱和电压非常小,LDO通常只需要200mV左右的压降电压,远低于传统线性稳压器所需的2V左右的压降电压。静态电流越小、压降电压越低,LDO的转换效率越高。LDOs usually use MOSFETs as power transistors. MOSFETs are voltage-driven and do not require current, so the quiescent current consumed by the device itself is greatly reduced. The voltage drop on the MOSFET is roughly equal to the product of the output current and the on-resistance. Since the on-resistance of the MOSFET is very small, its saturation voltage is very small. LDO usually only needs a voltage drop of about 200mV, which is much lower than that of traditional linear regulators. The drop voltage of about 2V required by the voltage regulator. The smaller the quiescent current and the lower the voltage drop, the higher the conversion efficiency of the LDO.

LDO凭借低成本、低压降、低功耗、低噪声和结构简单等优势在市场上占有重要地位,广泛用于便携式电子设备、通信系统、工业设备、医疗器械等需要稳定电源的电子设备。With the advantages of low cost, low voltage drop, low power consumption, low noise and simple structure, LDO occupies an important position in the market, and is widely used in portable electronic equipment, communication systems, industrial equipment, medical equipment and other electronic equipment that require stable power supply.

传统LDO的电源抑制比会随着工作频率的增大而降低,因此要求高电源抑制比的电路的工作频率存在上限。常用的增强高频电源抑制比的方法有片外接补偿电容和功率管衬底调制技术等。片外接补偿电容的方法通常需要一个μF级的电容,电路无法做到全集成,无法应用在各种微型电子设备中,不符合现在的电子设备越来越小型化的特点。功率管衬底调制技术需要消耗大量的静态电流,会大大降低LDO的效率,并且电路实现复杂。传统LDO只有推电流模式,只能用于驱动对电源噪声敏感的负载电路,不能用于驱动对地噪声敏感的负载电路。The power supply rejection ratio of a traditional LDO decreases as the operating frequency increases, so there is an upper limit to the operating frequency of circuits that require a high power supply rejection ratio. Commonly used methods to enhance the high-frequency power supply rejection ratio include off-chip compensation capacitors and power tube substrate modulation techniques. The method of connecting compensation capacitors outside the chip usually requires a μF capacitor, and the circuit cannot be fully integrated and cannot be used in various microelectronic devices, which does not meet the characteristics of the increasingly miniaturized electronic devices. The power tube substrate modulation technology needs to consume a large amount of quiescent current, which will greatly reduce the efficiency of the LDO, and the circuit implementation is complicated. Traditional LDOs only have push current mode, which can only be used to drive load circuits that are sensitive to power supply noise, and cannot be used to drive load circuits that are sensitive to ground noise.

发明内容Contents of the invention

本发明提出了一种高电源抑制比的无片外电容的推拉型LDO,目的在于解决传统LDO需要片外大电容来实现高频电源抑制比的问题和不能有效驱动对地噪声敏感的负载电路的问题。The present invention proposes a push-pull LDO without off-chip capacitors with high power supply rejection ratio, aiming to solve the problem that traditional LDOs need large off-chip capacitors to achieve high-frequency power supply rejection ratio and cannot effectively drive load circuits sensitive to ground noise The problem.

本发明的核心思想是:由功率晶体管、共栅极放大器以及超级源极跟随器构成一个低增益快速环路,该环路的所有都节点为低阻抗节点所以只需要一个220pF的片上补偿电容即可保证环路稳定性,并且将功率晶体管的漏端设置为环路的主极点,不需要μF级的片外大电容;低增益快速环路具有超过700MHz的单位增益频率,具有很快的瞬态响应速度,可以实现1Hz-1GHz频率范围内低于-10dB的电源抑制比;通过共用误差放大器EA、二选一选择器、分压电阻以及反相器,将电路结构对称且工作原理相同的推电流模块和拉电流模块结合在一起,在不增加太多静态功耗的同时实现有效驱动对电源噪声敏感的负载电路和对地噪声敏感的负载电路。The core idea of the present invention is: a low-gain fast loop is formed by a power transistor, a common gate amplifier and a super source follower, and all nodes of the loop are low-impedance nodes, so only a 220pF on-chip compensation capacitor is needed The stability of the loop can be guaranteed, and the drain terminal of the power transistor is set as the main pole of the loop, which does not require a large off-chip capacitor of the μF level; the low-gain fast loop has a unity gain frequency of more than 700MHz, and has a very fast instantaneous State response speed, can achieve a power supply rejection ratio lower than -10dB in the frequency range of 1Hz-1GHz; by sharing the error amplifier EA, one-two selector, voltage divider resistor and inverter, the circuit structure is symmetrical and the working principle is the same The combination of the push current module and the current pull module can effectively drive the load circuit sensitive to power supply noise and the load circuit sensitive to ground noise without increasing too much static power consumption.

为实现上述目的,本发明的技术实现方案如下:To achieve the above object, the technical implementation scheme of the present invention is as follows:

所述一种高电源抑制比的无片外电容的推拉型LDO包括误差放大器EA、二选一选择器、补偿电容器、推电流模块、拉电流模块、分压电阻和反相器;The push-pull LDO with no off-chip capacitor with a high power supply rejection ratio includes an error amplifier EA, a selector, a compensation capacitor, a push current module, a pull current module, a voltage divider resistor and an inverter;

其中,误差放大器EA采用NMOS晶体管作为输入对的差转单折叠式共源共栅跨导放大器,提供高增益,同时对电源噪声和地噪声进行一定程度的衰减,向后级电路输出一个相对干净的电压;Among them, the error amplifier EA uses NMOS transistors as the input pair of differential-turn single-fold cascode transconductance amplifiers to provide high gain, and at the same time attenuate the power supply noise and ground noise to a certain extent, and output a relatively clean voltage;

其中,二选一选择器包括MUX-I、MUX-II、MUX-III,采用数字逻辑电路实现;Among them, the two-choice selector includes MUX-I, MUX-II, and MUX-III, which are realized by digital logic circuits;

其中,补偿电容器包括CP、CN和CC,采用金属-绝缘体-金属电容;Among them, the compensation capacitor includes C P , C N and C C , and adopts metal-insulator-metal capacitance;

其中,推电流模块包括PMOS功率晶体管、共栅极放大器、超级源极跟随器、MOS晶体管开关和电流镜;Among them, the current pushing module includes PMOS power transistor, common gate amplifier, super source follower, MOS transistor switch and current mirror;

其中,拉电流模块包括NMOS功率晶体管、共栅极放大器、超级源极跟随器、MOS晶体管开关和电流镜;Among them, the current source module includes NMOS power transistor, common gate amplifier, super source follower, MOS transistor switch and current mirror;

其中,分压电阻包括R1和R2,采用多晶硅电阻;Wherein, the voltage dividing resistors include R 1 and R 2 , and polysilicon resistors are used;

其中,反相器采用数字逻辑电路实现。Wherein, the inverter is realized by a digital logic circuit.

所述一种高电源抑制比的无片外电容的推拉型LDO中各模块的连接关系如下:The connection relationship of each module in the push-pull LDO without off-chip capacitor with high power supply rejection ratio is as follows:

误差放大器EA的输出端与MUX-I相连,MUX-I的通道1分别与CN以及拉电流模块相连,MUX-I的通道0分别与CP以及推电流模块相连,CN分别与MUX-I的通道1以及电源相连,CP分别与MUX-I的通道0以及地相连,拉电流模块和推电流模块的输出端与CC、R2以及MUX-III相连,CC与MUX-II相连,MUX-II的通道1与电源相连,MUX-II的通道0与地相连,MUX-III分别与R1、R2以及误差放大器EA的反相输入端相连,反相器分别与MUX-I、MUX-II、MUX-III、推电流模块和拉电流模块相连。The output terminal of the error amplifier EA is connected to MUX-I, the channel 1 of MUX-I is connected to CN and the pull current module respectively, the channel 0 of MUX-I is connected to C P and the current pushing module respectively, and CN is connected to MUX- Channel 1 of I is connected to the power supply, C P is connected to channel 0 of MUX-I and the ground respectively, the output terminals of the current pulling module and the current pushing module are connected to C C , R 2 and MUX-III, and C C is connected to MUX-II Connected, channel 1 of MUX-II is connected to the power supply, channel 0 of MUX-II is connected to the ground, MUX-III is connected to R 1 , R 2 and the inverting input of the error amplifier EA respectively, and the inverters are respectively connected to MUX- I, MUX-II, MUX-III, the push current module and the pull current module are connected.

所述一种高电源抑制比的无片外电容的推拉型LDO中各模块的功能如下:The functions of each module in the push-pull LDO without off-chip capacitors with high power supply rejection ratio are as follows:

误差放大器EA的功能是放大参考电压VREF与反馈电压VF之间的差值并输出给后级电路,将反馈电压VF钳位在参考电压VREF附近,提供高增益,实现较好的线性调整率和负载调整率,增强低频电源抑制比;The function of the error amplifier EA is to amplify the difference between the reference voltage V REF and the feedback voltage V F and output it to the subsequent circuit, clamp the feedback voltage V F near the reference voltage V REF , provide high gain, and achieve better Linear adjustment rate and load adjustment rate, enhanced low-frequency power supply rejection ratio;

二选一选择器的功能是选择电路工作在推电流模式或拉电流模式;The function of the two-choice selector is to select the circuit to work in the push current mode or the pull current mode;

补偿电容器的功能是补偿电路中各环路的相位裕度,增强系统稳定性;The function of the compensation capacitor is to compensate the phase margin of each loop in the circuit and enhance the stability of the system;

推电流模块的功能是提供一个低增益快速环路,实现快速瞬态响应和增强的高频电源抑制比,输出一个参考地的干净电压;The function of the push current module is to provide a low-gain fast loop to achieve fast transient response and enhanced high-frequency power supply rejection ratio, and output a clean voltage referenced to ground;

拉电流模块的功能是提供一个低增益快速环路,实现快速瞬态响应和增强的高频电源抑制比,输出一个参考电源的干净电压;The function of the current source module is to provide a low-gain fast loop to achieve fast transient response and enhanced high-frequency power supply rejection ratio, and output a clean voltage of the reference power supply;

分压电阻的功能是串联在输出和电源之间实现分压,为拉电流模式和推电流模式提供不同的输出电压值;The function of the voltage divider resistor is to divide the voltage between the output and the power supply in series, and provide different output voltage values for the pull current mode and the push current mode;

反相器的功能是输出一个与SM相反电平的电压SMN,用于控制推电流模块和拉电流模块中的部分晶体管开关打开或者关闭。The function of the inverter is to output a voltage S MN with an opposite level to S M , which is used to control some transistor switches in the current pushing module and the current pulling module to turn on or off.

所述一种高电源抑制比的无片外电容的推拉型LDO的工作过程,具体包括如下步骤:The working process of the push-pull LDO without off-chip capacitor with high power supply rejection ratio specifically includes the following steps:

步骤一、选择LDO的工作模式,具体又包括如下子步骤:Step 1. Select the working mode of the LDO, which specifically includes the following sub-steps:

步骤1.1输入一个低电平/高电平控制信号SM,MUX-I、MUX-II以及MUX-III都选通通道0/通道1;Step 1.1 Input a low level/high level control signal S M , MUX-I, MUX-II and MUX-III all select channel 0/channel 1;

步骤1.2低电平/高电平控制信号SM经过反相器输出一个高电平/低电平控制信号SMNStep 1.2 The low-level/high-level control signal S M outputs a high-level/low-level control signal S MN through the inverter;

步骤1.3高电平控制信号SM和低电平控制信号SMN共同控制推电流模块工作并且拉电流模块不工作/低电平控制信号SM和高电平控制信号SMN共同控制推电流模块不工作并且拉电流模块工作;Step 1.3 The high-level control signal S M and the low-level control signal S MN jointly control the push current module to work and the pull current module does not work / the low-level control signal S M and the high-level control signal S MN jointly control the push current module does not work and the current source module works;

此时,LDO工作在推电流模式/拉电流模式;At this time, the LDO works in the push current mode/source current mode;

步骤二、将输出电压稳定在对应工作模式的额定值,具体包括如下子步骤:Step 2. Stabilize the output voltage at the rated value corresponding to the working mode, specifically including the following sub-steps:

步骤2.1误差放大器EA放大参考电压VREF与反馈电压VF的差值并输出给推电流模块/拉电流模块;Step 2.1 The error amplifier EA amplifies the difference between the reference voltage V REF and the feedback voltage V F and outputs it to the current push module/current pull module;

步骤2.2推电流模块/拉电流模块根据误差放大器EA提供的放大差值调整自身的输出电压;Step 2.2 The current push module/current pull module adjusts its own output voltage according to the amplification difference provided by the error amplifier EA;

步骤2.3将推电流模块/拉电流模块调整后的输出电压反馈给误差放大器EA的反相输入端;Step 2.3 Feedback the adjusted output voltage of the push current module/source current module to the inverting input terminal of the error amplifier EA;

误差放大器EA与推电流模块/拉电流模块构成一个负反馈环路,重复上述步骤二中的步骤2.1、2.2和2.3,直至输出电压稳定在对应工作模式的额定值;The error amplifier EA and the push current module/pull current module form a negative feedback loop, and repeat the steps 2.1, 2.2 and 2.3 in the above step 2 until the output voltage stabilizes at the rated value of the corresponding working mode;

步骤三、快速响应输出电压的交流小信号波动,实现1Hz-1GHz频率范围内低于-10dB的电源抑制比,具体包括如下子步骤:Step 3. Quickly respond to the AC small signal fluctuation of the output voltage, and realize the power supply rejection ratio lower than -10dB in the frequency range of 1Hz-1GHz, specifically including the following sub-steps:

步骤3.1当电源/地端出现交流小信号波动导致输出电压有交流小信号波动时,在推电流模块/拉电流模块内部的共栅极放大器的漏端会产生一个误差交流电压;Step 3.1 When small AC signal fluctuations occur at the power supply/ground terminal, resulting in small AC signal fluctuations in the output voltage, an error AC voltage will be generated at the drain of the common-gate amplifier inside the push current module/current pull module;

步骤3.2在共栅极放大器的漏端产生的误差交流电压经过超级源极跟随器后传递到PMOS功率晶体管/NMOS功率晶体管的栅极;Step 3.2 The error AC voltage generated at the drain terminal of the common gate amplifier is passed to the gate of the PMOS power transistor/NMOS power transistor after passing through the super source follower;

步骤3.3PMOS功率晶体管/NMOS功率晶体管的栅极电压变化导致VGS变化,功率晶体管调整负载电流的大小变化以对抗输出电压波动,稳定输出电压;Step 3.3 Changes in the gate voltage of the PMOS power transistor/NMOS power transistor lead to changes in V GS , and the power transistor adjusts the change in load current to resist output voltage fluctuations and stabilize the output voltage;

推电流模块/拉电流模块内部由PMOS功率晶体管/NMOS功率晶体管、共栅极放大器和超级源极跟随器构成一个低增益快速环路,该环路所有节点都是低阻点并且具有很高的单位增益频率,可以快速响应上述3个步骤,在不需要μF级片外大电容的情况下实现1Hz-1GHz频率范围内低于-10dB的电源抑制比。The current push module/current pull module consists of a PMOS power transistor/NMOS power transistor, a common gate amplifier and a super source follower to form a low-gain fast loop. All nodes of the loop are low-resistance points and have a high Unity gain frequency can quickly respond to the above three steps, and achieve a power supply rejection ratio lower than -10dB in the frequency range of 1Hz-1GHz without the need for large off-chip capacitors of μF level.

有益效果Beneficial effect

一种高电源抑制比的无片外电容的推拉型LDO,与传统的LDO相比,具有以下有益效果:A push-pull LDO with no off-chip capacitor with high power supply rejection ratio, compared with traditional LDO, has the following beneficial effects:

1.引入一个低增益快速环路,在不需要μF级片外大电容的情况下实现响应时间低于6ns的快速瞬态响应和1Hz-1GHz频率范围内低于-10dB的电源抑制比;1. Introduce a low-gain fast loop to achieve a fast transient response with a response time of less than 6ns and a power supply rejection ratio of less than -10dB in the frequency range of 1Hz-1GHz without the need for large off-chip capacitors of μF level;

2.误差放大器采用NMOS晶体管作为输入对的差转单折叠式共源共栅跨导放大器,提供高增益,实现较好的线性调整率和负载调整率,增强低频电源抑制比;2. The error amplifier uses NMOS transistors as the input pair of differential-turn single-fold cascode transconductance amplifiers to provide high gain, achieve better linear regulation and load regulation, and enhance the low-frequency power supply rejection ratio;

3.通过共用误差放大器EA、二选一选择器、分压电阻以及反相器,将推电流模式和拉电流模式结合在一起,实现了既能驱动对电源噪声敏感电路又能驱动对地噪声敏感电路,在不增加过多静态电流的同时解决了传统LDO不能驱动对地噪声敏感电路的问题;3. By sharing the error amplifier EA, the one-of-two selector, the voltage divider resistor and the inverter, the push current mode and the pull current mode are combined to realize the ability to drive circuits sensitive to power supply noise and ground noise Sensitive circuits solve the problem that traditional LDOs cannot drive circuits sensitive to ground noise without increasing excessive quiescent current;

4.不需要μF级片外大电容,实现电路全集成,节约成本。4. There is no need for large off-chip capacitors of μF level, which realizes full circuit integration and saves costs.

附图说明Description of drawings

图1是本发明一种高电源抑制比的无片外电容的推拉型LDO的推电流模式电路结构图;Fig. 1 is the push-current mode circuit structure diagram of the push-pull type LDO of the push-pull type LDO of a kind of high power supply rejection ratio of the present invention without off-chip;

图2是本发明一种高电源抑制比的无片外电容的推拉型LDO的拉电流模式电路结构图;Fig. 2 is a drawing current mode circuit structure diagram of a push-pull type LDO without off-chip capacitor with high power supply rejection ratio of the present invention;

图3是本发明一种高电源抑制比的无片外电容的推拉型LDO的整体电路结构图;Fig. 3 is the overall circuit structure diagram of the push-pull type LDO without off-chip capacitance of a kind of high power supply rejection ratio of the present invention;

图4是本发明一种高电源抑制比的无片外电容的推拉型LDO的推电流模式的电源抑制比图;Fig. 4 is the power supply rejection ratio figure of the push-pull type LDO of the push-pull type LDO of a kind of high power supply rejection ratio of the present invention without off-chip capacitor;

图5是本发明一种高电源抑制比的无片外电容的推拉型LDO的拉电流模式的电源抑制比图;Fig. 5 is the power supply rejection ratio figure of the pulling current mode of the push-pull type LDO of the push-pull type LDO without off-chip capacitor of a kind of high power supply rejection ratio of the present invention;

图6是本发明一种高电源抑制比的无片外电容的推拉型LDO的负载瞬态响应图;Fig. 6 is a load transient response diagram of a push-pull LDO without off-chip capacitor with high power supply rejection ratio of the present invention;

图7是本发明一种高电源抑制比的无片外电容的推拉型LDO的推电流模式的线性调整率图;Fig. 7 is the linear adjustment rate diagram of the push current mode of a push-pull LDO without off-chip capacitor with high power supply rejection ratio of the present invention;

图8是本发明一种高电源抑制比的无片外电容的推拉型LDO的拉电流模式的线性调整率图;Fig. 8 is a linear adjustment rate diagram of a pull current mode of a push-pull LDO without an off-chip capacitor with a high power supply rejection ratio of the present invention;

图9是本发明一种高电源抑制比的无片外电容的推拉型LDO的负载调整率图;Fig. 9 is a load regulation diagram of a push-pull LDO without off-chip capacitor with high power supply rejection ratio of the present invention;

具体实施方式Detailed ways

下面结合实施例及附图中对本发明一种高电源抑制比的无片外电容的推拉型LDO依托系统的各电路模块及工作过程做进一步说明和详细描述。The circuit modules and working process of a push-pull LDO-based system with high power supply rejection ratio and no off-chip capacitor according to the present invention will be further explained and described in detail below in conjunction with the embodiments and accompanying drawings.

实施例1Example 1

所述一种高电源抑制比的无片外电容的推拉型LDO的工作过程如下:The working process of the push-pull LDO without off-chip capacitor with high power supply rejection ratio is as follows:

步骤A、选择LDO的工作模式,具体又包括如下子步骤:Step A, select the working mode of LDO, specifically include the following sub-steps:

步骤A.1输入一个低电平/高电平控制信号SM,MUX-I、MUX-II以及MUX-III都选通通道0/通道1;Step A.1 Input a low level/high level control signal S M , MUX-I, MUX-II and MUX-III all select channel 0/channel 1;

具体到本实施例,输入的高电平控制信号SM为1.25V,低电平控制信号SM为0;Specifically in this embodiment, the input high-level control signal S M is 1.25V, and the low-level control signal S M is 0;

步骤A.2低电平/高电平控制信号SM经过反相器输出一个高电平/低电平控制信号SMNStep A.2 The low-level/high-level control signal S M outputs a high-level/low-level control signal S MN through the inverter;

具体到本实施例,反相器输出的高电平控制信号SMN为1.25V,低电平控制信号SMN为0;Specifically in this embodiment, the high-level control signal S MN output by the inverter is 1.25V, and the low-level control signal S MN is 0;

步骤A.3高电平控制信号SM和低电平控制信号SMN共同控制推电流模块工作并且拉电流模块不工作/低电平控制信号SM和高电平控制信号SMN共同控制推电流模块不工作并且拉电流模块工作;Step A.3 The high-level control signal S M and the low-level control signal S MN jointly control the push current module to work and the pull current module does not work / the low-level control signal S M and the high-level control signal S MN jointly control the push The current module does not work and the source module works;

此时,LDO工作在推电流模式/拉电流模式;At this time, the LDO works in the push current mode/source current mode;

具体到本实施例,LDO的推电流模式的负载电路接在输出端和地之间,拉电流模式的负载电路接在输出端和电源之间;Specifically in this embodiment, the load circuit of the push current mode of the LDO is connected between the output terminal and the ground, and the load circuit of the pull current mode is connected between the output terminal and the power supply;

步骤B、将输出电压稳定在对应工作模式的额定值,具体包括如下子步骤:Step B. Stabilize the output voltage at the rated value corresponding to the working mode, specifically including the following sub-steps:

步骤B.1误差放大器EA放大参考电压VREF与反馈电压VF的差值并输出给推电流模块/拉电流模块;Step B.1 The error amplifier EA amplifies the difference between the reference voltage V REF and the feedback voltage V F and outputs it to the push current module/source current module;

具体到本实施例,参考电压VREF为1V;Specifically in this embodiment, the reference voltage V REF is 1V;

步骤B.2推电流模块/拉电流模块根据误差放大器EA提供的放大差值调整自身的输出电压;Step B.2 The current pushing module/current pulling module adjusts its own output voltage according to the amplification difference provided by the error amplifier EA;

具体到本实施例,推电流模式的输出电压为1V,拉电流模式的输出电压为0.25V,不同的输出电压通过分压电阻R1与R2串连实现;Specifically in this embodiment, the output voltage of the push current mode is 1V, and the output voltage of the pull current mode is 0.25V, and different output voltages are realized by connecting the voltage dividing resistors R1 and R2 in series;

步骤B.3将推电流模块/拉电流模块调整后的输出电压反馈给误差放大器EA的反相输入端;Step B.3 feeds back the adjusted output voltage of the push current module/source current module to the inverting input terminal of the error amplifier EA;

误差放大器EA与推电流模块/拉电流模块构成一个负反馈环路,重复上述步骤B中的步骤B.1、B.2和B.3,直至输出电压稳定在额定值;The error amplifier EA and the current push module/current pull module form a negative feedback loop, and repeat the steps B.1, B.2 and B.3 in the above step B until the output voltage stabilizes at the rated value;

具体到本实施例,推电流模式的额定输出电压为1V,拉电流模式的额定输出电压为0.25V;Specifically in this embodiment, the rated output voltage of the push current mode is 1V, and the rated output voltage of the pull current mode is 0.25V;

步骤C、快速响应输出电压的交流小信号波动,实现1Hz-1GHz频率范围内低于-10dB的电源抑制比,具体包括如下子步骤:Step C, quickly responding to the AC small signal fluctuation of the output voltage, and realizing a power supply rejection ratio lower than -10dB in the frequency range of 1Hz-1GHz, specifically includes the following sub-steps:

步骤C.1在电源/地端出现交流小信号波动导致输出电压有交流小信号波动时,在推电流模块/拉电流模块内部的共栅极放大器的漏端会产生一个误差交流电压;Step C.1 When small AC signal fluctuations occur at the power supply/ground terminal, resulting in small AC signal fluctuations in the output voltage, an error AC voltage will be generated at the drain of the common-gate amplifier inside the push current module/current pull module;

具体到本实施例,推电流模式时在电源端输入一个峰值为50mV的交流小信号,拉流模式时在地端输入一个峰值为50mV的交流小信号;Specifically in this embodiment, a small AC signal with a peak value of 50mV is input at the power supply terminal in the push current mode, and a small AC signal with a peak value of 50mV is input at the ground terminal in the pull current mode;

步骤C.2在共栅极放大器的漏端产生的误差交流电压经过超级源极跟随器后传递到PMOS功率晶体管/NMOS功率晶体管的栅极;In step C.2, the error AC voltage generated at the drain terminal of the common gate amplifier is transferred to the gate of the PMOS power transistor/NMOS power transistor after passing through the super source follower;

步骤C.3PMOS功率晶体管/NMOS功率晶体管的栅极电压变化导致VGS变化,功率晶体管调整负载电流的大小变化以对抗输出电压波动,稳定输出电压;Step C.3 Changes in the gate voltage of the PMOS power transistor/NMOS power transistor lead to changes in V GS , and the power transistor adjusts the change in load current to resist output voltage fluctuations and stabilize the output voltage;

推电流模块/拉电流模块内部由PMOS功率晶体管/NMOS功率晶体管、共栅极放大器和超级源极跟随器构成一个低增益快速环路,该环路所有节点都是低阻点且具有很高的单位增益频率,可以快速响应上述3个步骤,在不需要μF级片外大电容的情况下实现1Hz-1GHz频率范围内低于-10dB的电源抑制比;The current push module/current pull module is composed of PMOS power transistor/NMOS power transistor, common gate amplifier and super source follower to form a low-gain fast loop. All nodes of the loop are low-resistance points and have high Unity gain frequency, can quickly respond to the above three steps, and achieve a power supply rejection ratio lower than -10dB in the frequency range of 1Hz-1GHz without the need for large off-chip capacitors of μF level;

具体到本实施例,LDO的推电流模式/拉电流模式的单位增益频率为700MHz/750MHz,两种工作模式都实现了低于6ns的瞬态响应和1Hz-1GHz频率范围内低于-10dB的电源抑制比。Specifically in this embodiment, the unity gain frequency of the push current mode/source current mode of the LDO is 700MHz/750MHz, and both operating modes have achieved a transient response lower than 6ns and a frequency lower than -10dB in the 1Hz-1GHz frequency range. power supply rejection ratio.

实施例2Example 2

所述的一种高电源抑制比的无片外电容的推拉型LDO的推电流模式原理图如图1所示,图中环路-I是由PMOS功率晶体管、共栅极放大器和缓冲器构成的一个低增益快速环路,具有超过700MHz的单位增益频率,可以实现超快瞬态响应和增强的高频电源抑制比。当电源端出现交流小信号波动导致输出电压有交流小信号波动时,在共栅极放大器的漏端会产生一个误差交流电压,误差交流电压经过缓冲器后传递到PMOS功率晶体管的栅极,PMOS功率晶体管的栅极电压变化导致VGS变化,调整负载电流的大小变化以对抗输出电压波动,实现较好的高频电源抑制比。为了确保环路-I的稳定性,需要使用一个220pF的电容器CC将主极点设置在PMOS功率晶体管的漏端。环路-II是一个高增益慢速环路,增强了LDO的负载调整率、线性调整率和低频电源抑制比。为了确保环路-II的稳定性,需要在误差放大器的输出端与地之间接一个1.5pF的补偿电容器CP。推电流模式的输出电压为1V。推电流模式时负载电路接在LDO的输出端和地之间,可以有效减小电源端的小信号电压波动对输出的影响,为负载电路提供一个干净的驱动电压。The push-current mode schematic diagram of the push-pull LDO of the described a kind of high power supply rejection ratio without off-chip capacitor is as shown in Figure 1, loop-I is made of PMOS power transistor, common gate amplifier and buffer among the figure A low-gain fast loop with a unity-gain frequency in excess of 700MHz enables ultrafast transient response and enhanced high frequency power supply rejection. When small AC signal fluctuations occur at the power supply end, resulting in small AC signal fluctuations in the output voltage, an error AC voltage will be generated at the drain of the common gate amplifier, and the error AC voltage will be transmitted to the gate of the PMOS power transistor after passing through the buffer. The change of the gate voltage of the power transistor leads to the change of V GS , and the change of the load current is adjusted to resist the fluctuation of the output voltage, so as to achieve a better high-frequency power supply rejection ratio. To ensure loop-I stability, a 220pF capacitor CC is used to set the dominant pole at the drain of the PMOS power transistor. Loop-II is a high-gain slow loop that enhances the LDO's load regulation, line regulation, and low-frequency power supply rejection. In order to ensure the stability of loop-II, a compensation capacitor C P of 1.5pF needs to be connected between the output terminal of the error amplifier and ground. The output voltage in push current mode is 1V. In push current mode, the load circuit is connected between the output terminal of the LDO and the ground, which can effectively reduce the influence of small signal voltage fluctuations at the power supply terminal on the output, and provide a clean driving voltage for the load circuit.

所述的一种高电源抑制比的无片外电容的推拉型LDO的拉电流模式工作原理图如图2所示,拉电流模式的工作原理与推电流模式相同,也有一个低增益快速环路-I和高增益慢速环路-II。为了确保环路-I的稳定性,需要使用一个220pF的电容器CC将主极点设置在NMOS功率晶体管的漏端。为了确保环路-II的稳定性,需要在误差放大器的输出端与电源之间接一个1pF的补偿电容器CN。拉电流模式的输出电压为0.25V。拉电流模式时负载电路接在LDO的输出端和电源之间,可以有效减小地端的小信号电压波动对输出的影响,为负载电路提供一个干净的驱动电压。The working principle diagram of the pull-current mode of the push-pull LDO without off-chip capacitor with high power supply rejection ratio is shown in Figure 2. The working principle of the pull-current mode is the same as that of the push-current mode, and there is also a low-gain fast loop -I and high gain slow loop -II. To ensure loop-I stability, a 220pF capacitor C C is required to set the dominant pole at the drain of the NMOS power transistor. In order to ensure the stability of loop-II, a 1pF compensation capacitor C N needs to be connected between the output terminal of the error amplifier and the power supply. The output voltage in source mode is 0.25V. In the current source mode, the load circuit is connected between the output terminal of the LDO and the power supply, which can effectively reduce the influence of small signal voltage fluctuations at the ground terminal on the output, and provide a clean driving voltage for the load circuit.

所述的一种高电源抑制比的无片外电容的推拉型LDO的整体电路如图3所示,推电流模式和拉电流模式共用误差放大器EA、反相器、二选一选择器MUX-I~MUX-III和220pF的补偿电容器CC,通过控制信号SM和SMN对二选一选择器MUX-I、MUX-II、MUX-III和晶体管开关M11、M16、M19、M23、M25、M28的控制来选择LDO的工作模式,当推电流模块工作时拉电流模块关闭,当拉电流模块工作时推电流模块关闭,以减小消耗的静态电流。通过分压电阻R1和R2串联来实现不同工作模式输出不同电压。The overall circuit of the push-pull LDO with high power supply rejection ratio and no off-chip capacitor is shown in Figure 3. The push-current mode and the pull-current mode share the error amplifier EA, the inverter, and the selector MUX- I~MUX-III and 220pF compensation capacitor C C , through control signals SM and SMN , select one of two selectors MUX-I, MUX-II, MUX-III and transistor switches M 11 , M 16 , M 19 , The control of M 23 , M 25 , and M 28 is used to select the working mode of the LDO. When the current pushing module is working, the current pulling module is turned off, and when the current pulling module is working, the pushing current module is turned off, so as to reduce the quiescent current consumed. The voltage divider resistors R1 and R2 are connected in series to realize outputting different voltages in different working modes.

图4和图5分别显示了LDO推电流模式和拉电流模式的电源抑制比。工作在推电流模式时,低频电源抑制比小于-58dB,1Hz-1GHz频率范围内电源抑制比小于-10dB,在1GHz处的电源抑制比小于-15dB。工作在拉电流模式时,低频电源抑制比小于-39dB,1Hz-1GHz频率范围内电源抑制比小于-10dB,在1GHz处的电源抑制比小于-12dB。Figure 4 and Figure 5 show the power supply rejection ratio of the LDO push current mode and source current mode, respectively. When working in push current mode, the low frequency power supply rejection ratio is less than -58dB, the power supply rejection ratio in the frequency range of 1Hz-1GHz is less than -10dB, and the power supply rejection ratio at 1GHz is less than -15dB. When working in the pull current mode, the low frequency power supply rejection ratio is less than -39dB, the power supply rejection ratio in the 1Hz-1GHz frequency range is less than -10dB, and the power supply rejection ratio at 1GHz is less than -12dB.

LDO的负载瞬态响应如图6所示,负载电流在10μA和20mA之间跳变,上升/下落时间为6ns,推电流模式的上冲电压为31mV,下冲电压36mV;拉电流模式的上冲电压为43mV,下冲电压为39mV。The load transient response of the LDO is shown in Figure 6. The load current jumps between 10μA and 20mA, the rise/fall time is 6ns, the overshoot voltage of the push current mode is 31mV, and the undershoot voltage is 36mV; The overshoot voltage is 43mV and the undershoot voltage is 39mV.

图7和图8分别显示了LDO的推电流模式和拉电流模式的线性调整率,推电流模式的额定输出电压为1V,当在电源端输入峰值为50mV的纹波时,输出电压变化幅度小于0.12mV,线性调整率为0.12%/V;拉电流模式的额定输出电压为0.25V,当在地端输入峰值为50mV的纹波时,输出电压变化幅度小于1.1mV,线性调整率为4.4%/V。Figure 7 and Figure 8 show the linear adjustment rate of LDO’s push current mode and pull current mode respectively. The rated output voltage of the push current mode is 1V. 0.12mV, the linear adjustment rate is 0.12%/V; the rated output voltage of the source current mode is 0.25V, when the peak input ripple is 50mV at the ground terminal, the output voltage change range is less than 1.1mV, and the linear adjustment rate is 4.4% /V.

LDO的负载调整率如图9所示,当负载电流在10μA和20mA之间变化时,推电流模式的输出电压变化幅度小于0.2mV,负载变化率为0.01mV/mA;拉电流模式的输出电压变化幅度小于0.5mV,负载变化率为0.025mV/mA。The load regulation rate of the LDO is shown in Figure 9. When the load current changes between 10μA and 20mA, the output voltage change range of the push current mode is less than 0.2mV, and the load change rate is 0.01mV/mA; the output voltage of the pull current mode The change range is less than 0.5mV, and the load change rate is 0.025mV/mA.

以上所述为本发明的较佳实施例而已,本发明不应该局限于该实施例和附图所公开的内容。凡是不脱离本发明所公开的精神下完成的等效或修改,都落入本发明保护的范围。The above description is only a preferred embodiment of the present invention, and the present invention should not be limited to the content disclosed in this embodiment and the accompanying drawings. All equivalents or modifications accomplished without departing from the disclosed spirit of the present invention fall within the protection scope of the present invention.

Claims (5)

1. A push-pull LDO with high power supply rejection ratio and no off-chip capacitor comprises a push current mode and a pull current mode; the method is characterized in that: the circuit structure comprises: the error amplifier EA, the alternative selector, the compensation capacitor, the push current module, the pull current module, the divider resistor and the inverter;
wherein, the error amplifier EA, the alternative selector, the divider resistor and the inverter are shared by a push current mode and a pull current mode;
the alternative selector comprises MUX-I, MUX-II and MUX-III;
the compensation capacitor comprises C P 、C N C C
The voltage dividing resistor comprises R 1 R is as follows 2
The current pushing module comprises a PMOS power transistor, a common gate amplifier, a super source follower, a MOS transistor switch and a current mirror;
the current pulling module comprises an NMOS power transistor, a common gate amplifier, a super source follower, a MOS transistor switch and a current mirror;
the connection relation of each module in the push-pull type LDO without the off-chip capacitor with high power supply rejection ratio is as follows:
the output of the error amplifier EA is connected to MUX-I, channel 1 of MUX-I being simultaneously connected to C N M is as follows 27 Is connected to the gate of MUX-I channel 0 and C at the same time P M is as follows 17 Is connected with the grid electrode of C N Is connected with a power supply, C P Connected with the ground, the output end of the current pushing module is connected with C at the same time C The output end of the pull current module, R2 and the channel 0 of the MUX-III are connected, C C Connected to MUX-II, channel 1 of MUX-II is connected to a power supply, channel 0 of MUX-II is connected to ground, and channel 1 of MUX-III is simultaneously connected to R 1 R is as follows 2 Connected to M in the error amplifier EA and MUX-III 2 Is connected with the grid electrode of the phase inverter and is simultaneously connected with M 11 Gate, M of (2) 16 Gate, M of (2) 23 Gate, M of (2) 28 The grid electrode of the (D), the MUX-I, MUX-II and the MUX-III are connected, and the output end of the inverter is simultaneously connected with M 19 Gate of (c) and M 25 R2 is connected with a power supply;
the working process of the push-pull type LDO without the off-chip capacitor with high power supply rejection ratio comprises the following steps:
step one, selecting an operation mode of the LDO, which specifically comprises the following sub-steps:
step 1.1 input a low/high control signal S M MUX-I, MUX-II and MUX-III both gate channel 0/channel 1;
step 1.2 Low level/high level control Signal S M Outputs a high level/low level control signal S through an inverter MN
Step 1.3 high level control Signal S M And a low level control signal S MN Control signal S for controlling the push current module to work and the pull current module to be not work/low level M And a high level control signal S MN The current pushing module is controlled to be not operated and the current pulling module is controlled to be operated together;
at this time, the LDO operates in a push current mode/a pull current mode;
step two, stabilizing the output voltage at the rated value of the corresponding working mode, which comprises the following steps:
step 2.1 error amplificationThe reference voltage V is amplified by the EA REF And feedback voltage V F The difference value of the current is output to a push current module/a pull current module;
step 2.2, the current pushing module/current pulling module adjusts the output voltage of the current pushing module/current pulling module according to the amplification difference value provided by the error amplifier EA;
step 2.3, feeding back the output voltage regulated by the current pushing module/current pulling module to the inverting input end of the error amplifier EA;
the error amplifier EA and the current pushing module/current pulling module form a negative feedback loop, and the steps 2.1, 2.2 and 2.3 in the step two are repeated until the output voltage is stabilized at the rated value of the corresponding working mode;
step three, rapidly responding to alternating current small signal fluctuation of output voltage, realizing power supply rejection ratio lower than-10 dB in the frequency range of 1Hz-1GHz, and specifically comprising the following substeps:
step 3.1, when alternating current small signal fluctuation occurs at the power supply/ground end and the output voltage has alternating current small signal fluctuation, an error alternating voltage is generated at the drain end of the common grid amplifier in the push current module/pull current module;
step 3.2, transmitting error alternating voltage generated at the drain end of the common gate amplifier to the gate of the PMOS power transistor/NMOS power transistor after passing through the super source follower;
step 3.3 Gate Voltage variation of PMOS Power transistor/NMOS Power transistor leading to V GS The power transistor adjusts the change of the load current to resist the fluctuation of the output voltage and stabilize the output voltage;
the push current module/pull current module is internally provided with a low-gain fast loop formed by a PMOS power transistor/NMOS power transistor, a common grid amplifier and a super source follower, all nodes of the loop are low-resistance points and have unit gain frequency exceeding 700MHz, transient response lower than 6ns can be realized, and the power supply rejection ratio lower than-10 dB in the frequency range of 1Hz-1GHz is realized under the condition that a mu F-level off-chip large capacitor is not needed.
2. The high power supply rejection ratio off-chip capacitor free push-pull LDO of claim 1, wherein: the push current module/pull current module is internally provided with a low-gain and rapid loop formed by a power transistor, a common gate amplifier and a super source follower, the loop has a unit gain frequency exceeding 700MHz, and the transient response of less than 6ns and the power supply rejection ratio of less than-10 dB in the frequency range of 1Hz-1GHz can be realized.
3. The high power supply rejection ratio off-chip capacitor free push-pull LDO of claim 1, wherein: the push current module/pull current module is internally provided with a low-gain and rapid loop formed by a power transistor, a common gate amplifier and a super source follower, all nodes of the loop are low-resistance points, and only the drain end of the power transistor is connected with an on-chip compensation capacitor C of 220pF C To ensure loop stability without the need for large off-chip capacitors.
4. The high power supply rejection ratio off-chip capacitor free push-pull LDO of claim 1, wherein: the LDO is provided with a push current mode and a pull current mode, wherein the push current mode is used for driving a power supply noise sensitive circuit, and a load circuit is connected between the output and the ground; the pull current mode is used for driving a ground noise sensitive circuit, and a load circuit is connected between the output and a power supply.
5. The high power supply rejection ratio off-chip capacitor free push-pull LDO of claim 1, wherein: high level control signal S M And a low level control signal S MN The current pushing module is controlled to work together, the current pulling module is not operated, and the LDO works in a current pushing mode; low level control signal S M And a high level control signal S MN The current pushing module is controlled to be not operated and the current pulling module is controlled to be operated together, and the LDO is operated in a current pulling mode.
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