CN115094513A - Silicon carbide crystal growth furnace - Google Patents
Silicon carbide crystal growth furnace Download PDFInfo
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- CN115094513A CN115094513A CN202210860562.8A CN202210860562A CN115094513A CN 115094513 A CN115094513 A CN 115094513A CN 202210860562 A CN202210860562 A CN 202210860562A CN 115094513 A CN115094513 A CN 115094513A
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- 239000013078 crystal Substances 0.000 title claims abstract description 48
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 78
- 230000007246 mechanism Effects 0.000 claims abstract description 53
- 238000001816 cooling Methods 0.000 claims description 75
- 239000007789 gas Substances 0.000 claims description 47
- 238000005086 pumping Methods 0.000 claims description 24
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 18
- 239000001257 hydrogen Substances 0.000 claims description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims description 18
- 230000006698 induction Effects 0.000 claims description 18
- 238000009413 insulation Methods 0.000 claims description 18
- 238000001514 detection method Methods 0.000 claims description 16
- 239000012530 fluid Substances 0.000 claims description 11
- 238000004891 communication Methods 0.000 claims description 10
- 230000001360 synchronised effect Effects 0.000 claims description 9
- 230000001105 regulatory effect Effects 0.000 claims description 6
- 230000007547 defect Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 230000008859 change Effects 0.000 description 5
- 238000007789 sealing Methods 0.000 description 3
- 238000009529 body temperature measurement Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/002—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
A silicon carbide crystal growth furnace belongs to the technical field of crystal growth devices and comprises a furnace body and a crucible, wherein the crucible is arranged in the furnace body; also comprises a heating mechanism; the heating mechanism comprises a heating coil, a heating coil lifting assembly and a crucible rotating assembly; the heating coil penetrates through the furnace body, and the heating coil positioned in the furnace body is wound on the crucible and is arranged in a clearance with the crucible; the heating coil lifting assembly is connected with a heating coil; the crucible rotating assembly is connected with the crucible. According to the scheme, the crucible rotating assembly is controlled to drive the crucible to rotate at a set speed, and physical factors such as the difference of the placing positions of the crucible, the thickness of the crucible, the strength of a heating coil magnetic field and the like are overcome, so that the uniform radial temperature distribution in the crucible can be ensured; the heating coil lifting assembly is controlled to drive the heating coil in the furnace body to lift at a certain speed, so that different temperatures of axial gradients in the crucible can be realized, and the defects of micropipe dislocation and the like caused by vibration generated by moving the charging device can be avoided.
Description
Technical Field
The invention belongs to the technical field of crystal growing devices, and particularly relates to a silicon carbide crystal growing furnace.
Background
At present, the PVT method is adopted for the crystal growth of most commercial semiconductor integrated circuits, the basic crystal growth principle is that raw materials are placed at the bottom of a graphite crucible, the crucible is heated through an induction coil by utilizing the skin effect, after a certain temperature is reached, a material source is decomposed into gas which is volatilized to a seed crystal area at the top of the crucible, SiC is generated through a series of chemical reactions, and the gas is crystallized on the surface of the seed crystal through a certain axial and radial temperature gradient to obtain single crystal silicon carbide with a certain structure.
Although the change of axial temperature gradient is solved by lifting the charging device in the existing growth furnace equipment on the market, the vibration generated by the charging device in the up-and-down moving process can influence the slight change of the position of an internal crystal material, thereby causing the defects of crystal micropipes, dislocation and the like. In addition, the problem that the radial temperature distribution is uneven due to physical factors such as the difference of the crucible placing positions, the crucible thickness, the intensity of the heating coil magnetic field and the like is not considered, so that the crystal thickness is uneven is caused. In addition, the existing crystal growth furnace equipment is often operated in a step mode in the crystal growth process, namely, crystal growth parameters are required to be adjusted at any time in manual intervention at each crystal growth stage, so that the crystal quality is uneven and poor in consistency, the requirements of operators on crystal growth experience are improved in a phase change mode, the labor cost is increased, and the production efficiency is greatly reduced.
Therefore, it is necessary to invent a silicon carbide crystal growth furnace to overcome the above-mentioned disadvantages.
Disclosure of Invention
In view of the above-mentioned deficiencies of the prior art, the present invention provides a silicon carbide crystal growth furnace.
In order to solve the above-described technical problems, the present invention adopts the following technical solutions.
A silicon carbide crystal growth furnace comprises a furnace body and a crucible, wherein the crucible is arranged in the furnace body; also comprises a heating mechanism; the heating mechanism comprises a heating coil, a heating coil lifting assembly and a crucible rotating assembly; the heating coil penetrates through the furnace body, and the heating coil positioned in the furnace body is wound on the crucible and arranged in a clearance with the crucible; the heating coil lifting assembly is connected with a heating coil; the crucible rotating assembly is connected with the crucible.
The heating mechanism also comprises an induction heating power supply, a tank circuit cabinet, an upper infrared high-temperature measuring instrument and a lower infrared high-temperature measuring instrument; the induction heating power supply is connected with the heating coil and is arranged in the tank cabinet; a fluid channel is arranged in the tank circuit cabinet; the top of the furnace body is provided with an upper cover, and the upper cover is provided with an upper cover temperature measuring point; the bottom of the furnace body is provided with a lower cover, and the lower cover is provided with a lower cover temperature measuring point; the furnace body is provided with a heat insulation layer; the heat insulation layer, the upper cover and the lower cover of the furnace body are all provided with fluid channels; the upper infrared high-temperature measuring instrument is fixedly arranged at the top of the furnace body and faces the temperature measuring point of the upper cover; the lower infrared high-temperature measuring instrument is fixedly arranged at the bottom of the furnace body and faces the temperature measuring point of the lower cover.
The heating coil lifting assembly comprises a lifting motor and a lead screw sliding block type lifting module; the screw rod sliding block type lifting module is connected with a lifting motor and a heating coil; the screw rod sliding block type lifting module is internally provided with a screw rod, a sliding block and a guide rail; the output end of the lifting motor is connected with the screw rod; the sliding block is in threaded connection with the screw rod and is in sliding connection with the guide rail; the slider is fixedly connected with the heating coil.
The crucible rotating assembly comprises a stepping motor, a synchronizing wheel, a rotating shaft and a rotating base; the stepping motor is provided with a stepping motor driver, and an output shaft of the stepping motor is provided with a rotating wheel; the rotating wheel is connected with the synchronous wheel through a synchronous belt; the lower end of the rotating shaft is fixedly provided with a synchronizing wheel, the middle part of the rotating shaft is rotatably arranged at the bottom of the furnace body, and the upper end of the rotating shaft is fixedly provided with a rotating base; the crucible is fixedly arranged on the rotating base.
The silicon carbide crystal growth furnace also comprises a vacuum mechanism; the vacuum mechanism comprises a pre-pumping pipeline and a molecular pump pipeline which are mutually parallel; one end of the pre-pumping pipeline is connected with the bottom of the furnace body, and the other end of the pre-pumping pipeline is connected with the pre-pumping valve; the pre-pumping pipeline is provided with a gauge protection valve, a pressure control valve, a first-stage capacitance diaphragm vacuum gauge, a second-stage capacitance diaphragm vacuum gauge and a pressure regulating valve which are connected in series; the gauge protection valve is connected with a vacuum transmitter; one end of the molecular pump pipeline is connected with the side wall of the furnace body, and the other end of the molecular pump pipeline is connected with the pre-pumping valve; the molecular pump pipeline is provided with a pneumatic gate valve, a molecular pump and a front-stage valve which are connected in series; the molecular pump is connected with a molecular pump driver; the pre-pumping valve is connected with a vacuum pump.
The silicon carbide crystal growth furnace also comprises a gas circuit mechanism; the gas circuit mechanism comprises a first gas circuit, a second gas circuit, a third gas circuit, a fourth gas circuit, a valve group hydrogen alarm detection sensor and a furnace top hydrogen alarm detection sensor which are connected in parallel; the first gas circuit comprises a first mass flow controller and a first pneumatic solenoid valve which are connected in series; the first air path is connected with the furnace body; the second air path comprises a second pneumatic electromagnetic valve; the second gas path is connected with the furnace body; the third gas path comprises a third mass flow controller and a third pneumatic electromagnetic valve which are connected in series; the third gas path is connected with the furnace body; the fourth gas circuit comprises a fourth mass flow controller and a fourth pneumatic solenoid valve connected in series; the fourth air path is connected with the furnace body; the valve group hydrogen alarm detection sensor is arranged 35-45 cm above the first mass flow controller; the furnace top hydrogen alarm detection sensor is arranged at a position 45-55 cm above the top of the furnace body.
The silicon carbide crystal growth furnace also comprises a cooling mechanism; the cooling mechanism comprises a circulating pump, an upper cover cooling pipeline, a heat insulation layer cooling pipeline, a molecular pump cooling pipeline, a lower cover cooling pipeline, a tank cabinet cooling pipeline and a return pipeline; one end of the upper cover cooling pipeline is connected with the circulating pump, the other end of the upper cover cooling pipeline is connected with the upper cover of the furnace body, and the upper cover cooling pipeline is provided with an upper cover mechanical valve and an upper cover flow thermometer; one end of the heat-insulating layer cooling pipeline is connected with the circulating pump, the other end of the heat-insulating layer cooling pipeline is connected with a heat-insulating layer of the furnace body, and the heat-insulating layer cooling pipeline is provided with a heat-insulating layer mechanical valve and a heat-insulating layer cold flow thermometer; one end of the molecular pump cooling pipeline is connected with the circulating pump, the other end of the molecular pump cooling pipeline is connected with the molecular pump, and the molecular pump cooling pipeline is provided with a molecular pump mechanical valve and a molecular pump cold flow thermometer; one end of the lower cover cooling pipeline is connected with the circulating pump, the other end of the lower cover cooling pipeline is connected with a lower cover of the furnace body, and the lower cover cooling pipeline is provided with a lower cover mechanical valve and a lower cover flow thermometer; one end of the tank circuit cabinet cooling pipeline is connected with the circulating pump, the other end of the tank circuit cabinet cooling pipeline is connected with the tank circuit cabinet, and the tank circuit cabinet cooling pipeline is provided with a tank circuit cabinet mechanical valve and a tank circuit cabinet flow thermometer; one end of the return pipeline is connected with the circulating pump, and the other end of the return pipeline is connected with the molecular pump, the tank way cabinet, the upper cover of the furnace body, the heat insulation layer of the furnace body and the lower cover of the furnace body.
The silicon carbide crystal growth furnace also comprises a control mechanism; the control mechanism comprises a communication module, a PLC (programmable logic controller) and an industrial personal computer; the industrial personal computer is in signal connection with the PLC; the PLC is connected with a communication module and an induction heating power supply through signals.
According to the scheme, the crucible rotating assembly is controlled to drive the crucible to rotate at a set speed, so that physical factors such as the difference of the placing positions of the crucible, the thickness of the crucible, the strength of a heating coil magnetic field and the like are overcome, and the uniform radial temperature distribution in the crucible can be ensured; the heating coil lifting assembly is controlled to drive the heating coil in the furnace body to lift at a certain speed, so that different temperatures of axial gradients in the crucible can be realized, and the defects of micropipe dislocation and the like caused by vibration generated by moving the charging device can be avoided; the two components operate simultaneously, so that the reasonable distribution of the air pressure and the temperature in the crucible is realized, and the qualification rate of the crystal is improved; utilize control mechanism to realize that the key formula of growing brilliant overall process is accomplished, get rid of the interference of human factor, improved the uniformity of crystal quality greatly, also promote production efficiency simultaneously by a wide margin, reduce labour cost.
Drawings
FIG. 1 is a schematic view of the heating mechanism of the present invention;
FIG. 2 is a schematic view of the vacuum mechanism of the present invention;
FIG. 3 is a schematic structural diagram of the air path mechanism of the present invention;
FIG. 4 is a schematic view of the cooling mechanism of the present invention;
FIG. 5 is a schematic view of the control mechanism of the present invention;
in the figure: the device comprises a furnace body 100, an upper cover temperature measuring point 101, a lower cover temperature measuring point 102, a crucible 200, a heating mechanism 300, an induction heating power supply 301, a tank circuit cabinet 302, a heating coil 303, an upper infrared high-temperature measuring instrument 304, a lower infrared high-temperature measuring instrument 305, a lifting motor 306, a stepping motor 307, a synchronizing wheel 308, a rotating shaft 309, a rotating base 310, a screw rod slider type lifting module 311, a vacuum mechanism 400, a gauge protection valve 401, a vacuum transmitter 402, a pressure control valve 403, a first-stage capacitance diaphragm vacuum gauge 404, a second-stage capacitance diaphragm vacuum gauge 405, a pressure regulating valve 406, a pneumatic gate valve 407, a molecular pump 408, a molecular pump driver 409, a backing valve 410, a pre-pumping valve 411, a vacuum pump 412, a gas circuit mechanism 500, a first gas circuit 501, a first mass flow controller 502, a first pneumatic solenoid valve 503, a second gas circuit 504, a second pneumatic solenoid valve 505, a third gas circuit 506, a third mass flow controller 507, A third pneumatic solenoid valve 508, a fourth gas circuit 509, a fourth mass flow controller 510, a fourth pneumatic solenoid valve 512, a valve group hydrogen alarm detection sensor 513, a furnace top hydrogen alarm detection sensor 514, a cooling mechanism 600, a circulating pump 601, an upper cover cooling pipeline 602, an upper cover mechanical valve 603, an upper cover flow thermometer 604, a heat-insulating layer cooling pipeline 605, a heat-insulating layer mechanical valve 606, a heat-insulating layer cold flow thermometer 607, a molecular pump cooling pipeline 608, a molecular pump mechanical valve 609, a molecular pump cold flow thermometer 610, a lower cover cooling pipeline 611, a lower cover mechanical valve 612, a lower cover flow thermometer 613, a tank cabinet cooling pipeline 614, a tank cabinet mechanical valve 615, a tank cabinet flow 616, a return pipeline 617, a control mechanism 700, a communication module 701, a PLC controller 702 and an industrial personal computer thermometer.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings.
A silicon carbide crystal growth furnace comprises a furnace body 100, a crucible 200, a heating mechanism 300, a vacuum mechanism 400, a gas circuit mechanism 500, a cooling mechanism 600 and a control mechanism 700.
The top of the furnace body 100 is provided with an upper cover, and the upper cover is provided with an upper cover temperature measuring point 101; the bottom of the furnace body 100 is provided with a lower cover, and the lower cover is provided with a lower cover temperature measuring point 102; and the furnace body 100 is provided with a heat-insulating layer; the heat insulation layer, the upper cover and the lower cover of the furnace body 100 are all provided with fluid channels; the crucible 200 is placed in the furnace body 100.
The heating mechanism 300 comprises an induction heating power supply 301, a tank cabinet 302, a heating coil 303, an upper infrared high-temperature measuring instrument 304, a lower infrared high-temperature measuring instrument 305, a heating coil lifting assembly and a crucible rotating assembly.
The induction heating power supply 301 is connected with a heating coil 303, and the induction heating power supply 301 is installed on the tank cabinet 302. The tank circuit cabinet 302 is provided with a fluid channel therein, and preferably, the tank circuit cabinet 302 may adopt a structure of a chinese patent "high frequency induction heating tank circuit cabinet" with a publication number of CN 207251949U.
The heating coil 303 is inserted into the furnace body 100, and the heating coil 303 located inside the furnace body 100 is wound around the crucible 200 and spaced from the crucible 200.
The upper infrared high-temperature measuring instrument 304 is fixedly installed at the top of the furnace body 100 and faces the upper cover temperature measuring point 101. The lower infrared high temperature measuring instrument 305 is fixedly installed at the bottom of the furnace body 100 and faces the lower cover temperature measuring point 102. The maximum temperature measurement of the upper infrared high-temperature measuring instrument 304 and the maximum temperature measurement of the lower infrared high-temperature measuring instrument 305 can reach 3000 ℃, and the measurement precision is +/-1 ℃.
The heating coil lifting assembly comprises a lifting motor 306 and a screw rod sliding block type lifting module 311; the lead screw slider type lifting module 311 is connected with a lifting motor 306 and a heating coil 303. The screw rod sliding block type lifting module 311 is internally provided with a screw rod, a sliding block and a guide rail; the output end of the lifting motor 306 is connected with the screw rod; the top of the screw rod is provided with an upper belt seat bearing, and the bottom of the screw rod is provided with a lower belt seat bearing; the sliding block is in threaded connection with the screw rod and is in sliding connection with the guide rail; the slider is fixedly connected with the heating coil 303. The screw slider type lifting module 311 is a common module in the mechanical field, and for example, a structure of a chinese patent "screw slider type lifting mechanism for lifting bed" with publication number CN214258685U, or a structure of a linear sliding table with stable operation "with publication number CN207710304U, or a GGK60 ball screw sliding table module produced and sold by high-tech intelligent transmission shares in east guan city may be adopted. The heating coil lifting assembly drives the heating coil 303 in the furnace body 100 to lift, the total lifting stroke can reach 300 mm, and the lifting speed adjusting range is 0.01-2000 mm/h.
The crucible rotating assembly comprises a stepping motor 307, a synchronous wheel 308, a rotating shaft 309 and a rotating base 310; the stepping motor 307 is provided with a stepping motor driver, and an output shaft of the stepping motor 307 is provided with a rotating wheel; the rotating wheel is connected with a synchronous wheel 308 through a synchronous belt; the lower end of the rotating shaft 309 is fixedly provided with a synchronizing wheel 308, the middle part of the rotating shaft is rotatably arranged at the bottom of the furnace body 100, and the upper end of the rotating shaft is fixedly provided with a rotating base 310; the crucible 200 is fixedly mounted to a rotating base 310. Preferably, a sealing structure is provided between the rotary shaft 309 and the bottom of the furnace body 100, and the sealing structure may be a structure of chinese patent "rotary shaft rotary sealing structure" with publication number CN 105465370 a. The stepping motor 307 drives the rotating shaft 309 to rotate through a rotating wheel, a synchronous belt and a synchronous wheel 308, so as to drive the rotating base 310 to rotate synchronously. Since the crucible 200 is placed on the rotary base 310, the crucible 200 is also rotated in synchronization. The rotation speed of the crucible 200 is adjusted within a range of 0.01 to 3 rpm/min.
The vacuum mechanism 400 includes a pre-pumping pipeline and a molecular pump pipeline which are parallel to each other.
One end of the pre-pumping pipeline is connected with the bottom of the furnace body 100, and the other end of the pre-pumping pipeline is connected with the pre-pumping valve 411; the pre-pumping pipeline is provided with a gauge protection valve 401, a pressure control valve 403, a first-stage capacitance diaphragm vacuum gauge 404, a second-stage capacitance diaphragm vacuum gauge 405 and a pressure regulating valve 406 which are connected in series; the gauge protection valve 401 is connected to a vacuum transducer 402. Preferably, the first stage capacitive diaphragm vacuum gauge 404 measures from 0 to 100mbar, the second stage capacitive diaphragm vacuum gauge 405 measures from 0 to 1000mbar, and the vacuum transducer 402 measures from 0 to 10 pa.
One end of the molecular pump pipeline is connected with the side wall of the furnace body 100, and the other end of the molecular pump pipeline is connected with the pre-pumping valve 411; the molecular pump pipeline is provided with a pneumatic gate valve 407, a molecular pump 408 and a backing valve 410 which are connected in series; the molecular pump 408 is connected with a molecular pump driver 409.
The pre-pump valve 411 is connected to a vacuum pump 412.
The gas circuit mechanism 500 comprises a first gas circuit 501, a second gas circuit 504, a third gas circuit 506, a fourth gas circuit 509, a valve group hydrogen alarm detection sensor 513 and a furnace top hydrogen alarm detection sensor 514 which are connected in parallel.
The first gas circuit 501 comprises a first mass flow controller 502 and a first pneumatic solenoid valve 503 connected in series; the first air path 501 is connected to the furnace body 100.
The second air path 504 comprises a second pneumatic solenoid valve 505; the second air path 504 is connected to the furnace body 100.
The third gas path 506 comprises a third mass flow controller 507 and a third pneumatic solenoid valve 508 which are connected in series; the third gas path 506 is connected with the furnace body 100.
The fourth gas circuit 509 comprises a fourth mass flow controller 510 and a fourth pneumatic solenoid valve 512 connected in series; the fourth gas passage 509 is connected to the furnace body 100.
The valve group hydrogen alarm detection sensor 513 is arranged 35-45 cm above the first mass flow controller 502; the furnace top hydrogen alarm detection sensor 514 is arranged at a position 45-55 cm above the top of the furnace body 100. The valve group hydrogen alarm detection sensor 513 and the furnace top hydrogen alarm detection sensor 514 are arranged to detect whether hydrogen leaks or not and prevent explosion of hydrogen leakage. The maximum adjusting range of the mass flow controller is 0-1000sccm, and the minimum adjusting range is 0-50 sccm.
The cooling mechanism 600 comprises a circulating pump 601, an upper cover cooling pipeline 602, a heat insulation layer cooling pipeline 605, a molecular pump cooling pipeline 608, a lower cover cooling pipeline 611, a tank circuit cabinet cooling pipeline 614 and a return pipeline 617;
one end of the upper cover cooling pipeline 602 is connected with the circulating pump 601, the other end of the upper cover cooling pipeline 602 is connected with the upper cover of the furnace body 100, and the upper cover cooling pipeline 602 is provided with an upper cover mechanical valve 603 and an upper cover flow thermometer 604;
one end of the heat-insulating layer cooling pipeline 605 is connected with the circulating pump 601, the other end of the heat-insulating layer cooling pipeline 605 is connected with a heat-insulating layer of the furnace body 100, and the heat-insulating layer cooling pipeline 605 is provided with a heat-insulating layer mechanical valve 606 and a heat-insulating layer cold flow thermometer 607;
one end of the molecular pump cooling pipeline 608 is connected with the circulating pump 601, the other end of the molecular pump cooling pipeline 608 is connected with the molecular pump 408, and the molecular pump cooling pipeline 608 is provided with a molecular pump mechanical valve 609 and a molecular pump cold flow thermometer 610;
one end of the lower cover cooling pipeline 611 is connected with the circulating pump 601, the other end of the lower cover cooling pipeline 611 is connected with the lower cover of the furnace body 100, and the lower cover cooling pipeline 611 is provided with a lower cover mechanical valve 612 and a lower cover flow thermometer 613;
one end of the tank cooling pipeline 614 is connected with the circulating pump 601, the other end of the tank cooling pipeline 614 is connected with the tank 302, and the tank cooling pipeline 614 is provided with a tank mechanical valve 615 and a tank flow thermometer 616;
one end of the return pipeline 617 is connected with the circulating pump 601, and the other end is connected with the molecular pump 408, the tank circuit cabinet 302, the upper cover of the furnace body 100, the heat insulation layer of the furnace body 100 and the lower cover of the furnace body 100.
The tank cabinet 302 is provided with a fluid passage. For example, the chinese utility model with patent No. 201721206871.4 discloses a high-frequency induction heating tank cabinet, and a fluid channel is formed inside a cabinet body frame, so that when in use, the temperature of the whole structure can be reduced by communicating with external cooling water. The fluid channel of the tank cabinet 302 in the present application may be the same as that of the chinese utility model with patent number 201721206871.4. The structure of the heat insulation layer, the fluid channels of the upper cover and the lower cover of the furnace body 100 and the fluid channels of the tank circuit cabinet 302 are the same.
The control mechanism 700 comprises a communication module 701, a PLC 702 and an industrial personal computer 703; the industrial personal computer 703 is in signal connection with the PLC 702; the PLC controller 702 is connected with a communication module 701 and an induction heating power supply 301 through signals. The PLC controller 702 is connected to various sensors via the communication module 701. The designated parameters are input to the industrial personal computer 703, and then the sensors are controlled through the PLC 702 and the communication module 701. Signals of the sensors are uploaded to the industrial personal computer 703 through the communication module 701 and the PLC 702, and man-machine interaction is achieved.
When the device is started, the vacuum mechanism is operated, the vacuum pump 412 is started first, the pre-pumping valve 411, the pressure regulating valve 406 and the pressure control valve 403 are opened, the furnace body 100 is directly vacuumized, and the first-stage capacitance diaphragm vacuum gauge 404 and the second-stage capacitance diaphragm vacuum gauge 405 read the pressure in the furnace body 100. When the pressure in the furnace body 100 is at a low vacuum, the gauge protection valve 401 is opened, and the pressure in the furnace body 100 is read by the vacuum transducer 402 at this time. When the vacuum transmitter 402 displays that the pressure is less than or equal to 8e-1pa, the front-stage valve 410 and the molecular pump 408 are opened, and the pressure control valve 403, the pressure regulating valve 406 and the pre-pumping valve 411 are closed. When the rotating speed of the molecular pump 408 reaches 35000r/min, the pneumatic gate valve 407 is opened to vacuumize for a certain time, and when the vacuum transmitter 402 displays a pressure of not more than 1e-3pa, at this time, the furnace body 100 is in ultimate vacuum, the heating mechanism 300 acts, the induction heating power supply 301 is turned on, the pneumatic gate valve 407 is turned off when a preset temperature for crystal growth is reached, and then the molecular pump 408 is turned off. When the rotation speed of the molecular pump 408 is 0r/min, the pre-stage valve 410, the pre-pumping valve 411 and the vacuum pump 412 can be closed in sequence. The sequence of opening and closing the valves is controlled by a PLC controller 702.
After the pressure environment required by the process is reached, the gas circuit mechanism 500 is opened, and the pressure in the furnace body 100 is adjusted through the mass flow controllers and the pneumatic solenoid valves in each gas circuit. The second air path 504 is provided with only a second pneumatic solenoid valve 505 for rapidly adjusting the pressure in the furnace body 100. The first gas circuit 501, the third gas circuit 506 and the fourth gas circuit 509 are further provided with mass flow controllers, so that the pressure in the furnace body 100 can be accurately adjusted. The vacuum transducer 402 reads the pressure in the furnace body 100, converts the analog quantity signal of the pressure into the vacuum degree, feeds the vacuum degree back to the display interface of the industrial personal computer 703, compares the input technological data requirement of the crystal growth process, and can linearly control the valve opening ratio of each mass flow controller through the calculation of the PLC 702, thereby accurately controlling the pressure of the furnace body 100.
In the heating process, the upper infrared high-temperature measuring instrument 304 and the lower infrared high-temperature measuring instrument 305 monitor the central temperature of the indoor crucible 200 in the furnace body 100 in real time and feed back the central temperature to the display interface of the industrial personal computer 703, compare the input technological parameter requirements of the crystal growth process, and the PLC 702 calculates the power of the controllable induction heating power supply 301 to adjust the temperature in the furnace body 100 in real time, and meanwhile, the cooling mechanism 600 acts to adjust the power of the circulating pump 601 to control the temperature and the total flow of cooling water, so that the temperature change in the furnace body 100 caused by the external environmental factors is maximally reduced. Meanwhile, the heating coil lifting assembly is controlled to drive the heating coil 303 in the furnace body 100 to lift at a set speed so as to meet the requirements of different gradient temperatures in the crystal growth process. The crucible rotating assembly is controlled to drive the crucible 200 to rotate at a set speed, so that the temperature of the crucible 200 is uniformly distributed in the same radial direction, and the temperature control in the furnace body 100 is completed. The control can be automatically completed without manual intervention, and crystal growth can be completed by one-click starting only by inputting parameters required in the crystal growth process into the industrial personal computer 703 before starting, so that the consistency of the crystal quality is greatly improved.
According to the scheme, the air pressure in the furnace body 100 is controlled in real time in the crystal growth process through the air circuit mechanism 500, the power of the induction heating power supply 301 is adjusted, the change of a temperature field in the furnace can be controlled in real time by matching with the crucible rotating assembly, the heating coil lifting assembly and the cooling mechanism, one-key crystal growth is realized by combining the control mechanism, the artificial interference in the crystal growth process is eliminated, the air pressure and the temperature environment in the crucible are ensured, and the quality and the consistency of crystals are improved.
The above embodiments are only for illustrating the invention and are not to be construed as limiting the invention, and those skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention, so that the equivalent technical solutions also belong to the scope of the invention, and the scope of the invention is defined by the claims.
Claims (8)
1. A silicon carbide crystal growth furnace comprises a furnace body (100) and a crucible (200), wherein the crucible (200) is arranged in the furnace body (100); characterized in that the device also comprises a heating mechanism (300); the heating mechanism (300) comprises a heating coil (303), a heating coil lifting assembly and a crucible rotating assembly; the heating coil (303) penetrates through the furnace body (100), and the heating coil (303) positioned in the furnace body (100) is wound on the crucible (200) and arranged in a gap with the crucible (200); the heating coil lifting assembly is connected with a heating coil (303); the crucible rotating assembly is connected with a crucible (200).
2. The silicon carbide crystal growth furnace of claim 1, wherein the heating mechanism (300) further comprises an induction heating power supply (301), a tank cabinet (302), an upper infrared pyrometer (304), a lower infrared pyrometer (305); the induction heating power supply (301) is connected with the heating coil (303), and the induction heating power supply (301) is arranged on the tank cabinet (302); a fluid channel is arranged in the tank circuit cabinet (302); the top of the furnace body (100) is provided with an upper cover, and the upper cover is provided with an upper cover temperature measuring point (101); the bottom of the furnace body (100) is provided with a lower cover, and the lower cover is provided with a lower cover temperature measuring point (102); the furnace body (100) is provided with a heat insulation layer; the heat insulation layer, the upper cover and the lower cover of the furnace body (100) are provided with fluid channels; the upper infrared high-temperature measuring instrument (304) is fixedly arranged at the top of the furnace body (100) and faces towards the upper cover temperature measuring point (101); the lower infrared high-temperature measuring instrument (305) is fixedly arranged at the bottom of the furnace body (100) and faces the temperature measuring point (102) of the lower cover.
3. The silicon carbide crystal growth furnace as claimed in claim 1, wherein the heating coil lifting assembly comprises a lifting motor (306), a lead screw slider type lifting module (311); the screw rod sliding block type lifting module (311) is connected with a lifting motor (306) and a heating coil (303); the screw rod sliding block type lifting module (311) is internally provided with a screw rod, a sliding block and a guide rail; the output end of the lifting motor (306) is connected with a screw rod; the sliding block is in threaded connection with the lead screw, and the sliding block is in sliding connection with the guide rail; the slide block is fixedly connected with the heating coil (303).
4. A silicon carbide crystal growth furnace according to claim 1 or 3 wherein the crucible rotating assembly comprises a stepper motor (307), a synchronizing wheel (308), a rotating shaft (309) and a rotating base (310); the stepping motor (307) is provided with a stepping motor driver, and an output shaft of the stepping motor (307) is provided with a rotating wheel; the rotating wheel is connected with a synchronous wheel (308) through a synchronous belt; the lower end of the rotating shaft (309) is fixedly provided with a synchronizing wheel (308), the middle part of the rotating shaft is rotatably arranged at the bottom of the furnace body (100), and the upper end of the rotating shaft is fixedly provided with a rotating base (310); the crucible (200) is fixedly arranged on the rotating base (310).
5. A silicon carbide crystal growth furnace according to claim 1 further comprising a vacuum mechanism (400); the vacuum mechanism (400) comprises a pre-pumping pipeline and a molecular pump pipeline which are mutually parallel; one end of the pre-pumping pipeline is connected with the bottom of the furnace body (100), and the other end of the pre-pumping pipeline is connected with a pre-pumping valve (411); the pre-pumping pipeline is provided with a gauge protection valve (401), a pressure control valve (403), a first-stage capacitance diaphragm vacuum gauge (404), a second-stage capacitance diaphragm vacuum gauge (405) and a pressure regulating valve (406) which are connected in series; the gauge protection valve (401) is connected with a vacuum transmitter (402); one end of the molecular pump pipeline is connected with the side wall of the furnace body (100), and the other end of the molecular pump pipeline is connected with the pre-pumping valve (411); the molecular pump pipeline is provided with a pneumatic gate valve (407), a molecular pump (408) and a backing valve (410) which are connected in series; the molecular pump (408) is connected with a molecular pump driver (409); the pre-pumping valve (411) is connected with a vacuum pump (412).
6. A silicon carbide crystal growth furnace according to claim 5 further comprising a gas path mechanism (500); the gas circuit mechanism (500) comprises a first gas circuit (501), a second gas circuit (504), a third gas circuit (506), a fourth gas circuit (509), a valve group hydrogen alarm detection sensor (513) and a furnace top hydrogen alarm detection sensor (514) which are connected in parallel; the first gas circuit (501) comprises a first mass flow controller (502) and a first pneumatic solenoid valve (503) which are connected in series; the first gas path (501) is connected with the furnace body (100); the second air circuit (504) comprises a second pneumatic solenoid valve (505); the second gas path (504) is connected with the furnace body (100); the third gas circuit (506) comprises a third mass flow controller (507) and a third pneumatic solenoid valve (508) which are connected in series; the third gas path (506) is connected with the furnace body (100); the fourth gas circuit (509) comprises a fourth mass flow controller (510) and a fourth pneumatic solenoid valve (512) connected in series; the fourth gas path (509) is connected with the furnace body (100); the valve group hydrogen alarm detection sensor (513) is arranged 35-45 cm above the first mass flow controller (502); the furnace top hydrogen alarm detection sensor (514) is arranged at a position 45-55 cm above the top of the furnace body (100).
7. A silicon carbide crystal growth furnace according to claim 6 further comprising a cooling mechanism (600); the cooling mechanism (600) comprises a circulating pump (601), an upper cover cooling pipeline (602), a heat insulation layer cooling pipeline (605), a molecular pump cooling pipeline (608), a lower cover cooling pipeline (611), a tank cabinet cooling pipeline (614) and a return pipeline (617); one end of the upper cover cooling pipeline (602) is connected with the circulating pump (601), the other end of the upper cover cooling pipeline is connected with the upper cover of the furnace body (100), and the upper cover cooling pipeline (602) is provided with an upper cover mechanical valve (603) and an upper cover flow thermometer (604); one end of the heat insulation layer cooling pipeline (605) is connected with the circulating pump (601), the other end of the heat insulation layer cooling pipeline is connected with a heat insulation layer of the furnace body (100), and the heat insulation layer cooling pipeline (605) is provided with a heat insulation layer mechanical valve (606) and a heat insulation layer cold flow thermometer (607); one end of the molecular pump cooling pipeline (608) is connected with the circulating pump (601), the other end of the molecular pump cooling pipeline is connected with the molecular pump (408), and the molecular pump cooling pipeline (608) is provided with a molecular pump mechanical valve (609) and a molecular pump cold flow thermometer (610); one end of the lower cover cooling pipeline (611) is connected with the circulating pump (601), the other end of the lower cover cooling pipeline is connected with the lower cover of the furnace body (100), and the lower cover cooling pipeline (611) is provided with a lower cover mechanical valve (612) and a lower cover flow thermometer (613); one end of the tank cooling pipeline (614) is connected with the circulating pump (601), the other end of the tank cooling pipeline is connected with the tank (302), and the tank cooling pipeline (614) is provided with a tank mechanical valve (615) and a tank flow thermometer (616); one end of the return pipeline (617) is connected with the circulating pump (601), and the other end is connected with the molecular pump (408), the tank circuit cabinet (302), the upper cover of the furnace body (100), the heat insulation layer of the furnace body (100) and the lower cover of the furnace body (100).
8. The silicon carbide crystal growth furnace of claim 7, further comprising a control mechanism (700); the control mechanism (700) comprises a communication module (701), a PLC (programmable logic controller) controller (702) and an industrial personal computer (703); the industrial personal computer (703) is in signal connection with the PLC controller (702); the PLC (702) is in signal connection with a communication module (701) and an induction heating power supply (301).
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