CN105420809A - Method and device for preparing platy monocrystal with temperature field vertical gradient moving method - Google Patents
Method and device for preparing platy monocrystal with temperature field vertical gradient moving method Download PDFInfo
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- CN105420809A CN105420809A CN201510928101.XA CN201510928101A CN105420809A CN 105420809 A CN105420809 A CN 105420809A CN 201510928101 A CN201510928101 A CN 201510928101A CN 105420809 A CN105420809 A CN 105420809A
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- crucible
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/64—Flat crystals, e.g. plates, strips or discs
Abstract
The invention relates to a method and a device for preparing a platy monocrystal with a temperature field vertical gradient moving method. A hearth is segmented in the vertical direction into a plurality of mutually independent temperature zones through partition boards, each temperature zone performs independent heating, temperature measurement and control, the hearth has certain temperature gradient or power gradient in the vertical direction through temperature control or power control of the different temperature zones, under the condition that a crucible, heating bodies and a crystal are not moved, the temperature gradient required by continuous movement of a crystal growth interface is met through temperature control of the different temperature zones and continuous movement of temperature field gradient or through heating power control and continuous movement of the power gradient, automatic raw material heating, automatic inoculation, shouldering and automatic crystal growth are realized through multi-temperature-zone linkage temperature control, and simulation of the crystal growth interface can be in graphical representation. The device is simple in structure, convenient and practical.
Description
Technical field
The present invention relates to single crystal preparing technical field, a kind of temperature field vertical direction gradient Mobile Method prepares method and the device of platy-monocrystal specifically.
Background technology
Sapphire α-Al
2o
3single crystal has excellent optics, mechanics, calorifics, dielectric, the performance such as corrosion-resistant, at visible and infrared band, there is higher transmittance and wider through band, compared with other optical window materials numerous, there are more stable chemical property and thermomechanical property, as antiacid caustic corrosion, high temperature resistant, high rigidity, high tensile, high heat conductance and significant thermal-shock resistance.Above-mentioned character makes sapphire material be widely used in the aspect such as substrate, femto-second laser substrate material, military infrared window, aerospace medium wave infra-red transmitting window gate material of semiconductor material with wide forbidden band as gan, relates to the numerous areas such as science and technology, national defence and civilian industry.
At present, the method for growing large-size sapphire single-crystal body has kyropoulos, EFG technique, heat-exchanging method, horizontal zone-melting technique etc.These method and apparatus are all by power input indirect adjustments and controls sapphire crystal growth interface temperature, cannot accomplish accurately regulation and control sapphire crystal growth interface temperature in time, thus affect speed and the quality of sapphire growth.
Summary of the invention
The crystal growth temperature existed for sapphire production technique in above-mentioned prior art cannot the problems such as the crystal growth that causes of accuracy controlling is slow, of poor quality, the invention provides method and device that a kind of temperature field vertical direction gradient Mobile Method prepares platy-monocrystal.
For solving the problems of the technologies described above, the technical solution used in the present invention is:
A kind of temperature field vertical direction gradient Mobile Method prepares the method for platy-monocrystal, adopt resistance-type heating element horizontally disposed at top end opening and bottom is provided with the both sides of the flats crucible of seed crystal pickup groove, by division plate, burner hearth is vertically divided into multiple relatively independent warm area, each warm area independent heating, independent thermometric, independent control, by the temperature of different warm area or the control realization burner hearth in the vertical direction of heating power be temperature or power gradient change, at crucible, heating element, in the fixed situation of crystal, by the continuous movement to the temperature control of different warm area and the continuous movement of warm field gradient or heating power control and power gradient, meet crystal long crystal boundary face constantly movement be adjusted to required thermograde, raw material Automatic-heating is realized by many warm area interlock temperature controls, automatic vaccination and shouldering, automatic long brilliant,
The width of described crucible is 10 ~ 200mm, and length is 50 ~ 1000mm, is highly 100 ~ 2000mm;
Described heating element is heating element of tungsten, molybdenum heating element, graphite heater or zirconium diboride composite ceramic heating unit;
By heating element, described arranges that the warm field upper temp formed is high, temperature of lower is low;
Described platy-monocrystal preparation flow is: feed-close the door-vacuumize-heat-melting sources-warm field gradient or power gradient start vertical movement-melt interface move up-inoculate-shouldering-crystal isauxesis-crystal growth terminates-warm field gradient or power gradient continue the vertically mobile crystalline temp that makes and be down to room temperature-open fire door-taking-up crystal, the brilliant process of whole length, when crucible, heating element, crystal are motionless, by to the warm field gradient of different warm area or the continuous movement of power gradient, realize single crystal preparation;
A kind of device preparing platy-monocrystal for temperature field as above vertical direction gradient Mobile Method, this device comprises crucible, multiple heating element, multiple warm area division plate, thermoscreen, burner hearth thermal insulation layer and crucible suspension bracket, described burner hearth thermal insulation layer top end opening, the top of thermoscreen and burner hearth thermal insulation layer removably connects and can form closed space, described crucible is vertically arranged in the enclosed space that thermoscreen and burner hearth thermal insulation layer formed, crucible is flats and top end opening, seed crystal pickup groove is provided with bottom it, described heating element is strip, and the both sides that are arranged on crucible parallel with crucible length direction, heating element end winding support is arranged on burner hearth thermal insulation layer, described warm area division plate ringwise, its annular outer wall is fixedly connected with burner hearth thermal insulation layer inwall, annular inner wall and crucible running fit, described warm area divider plate is arranged between multiple heating element, one end of described crucible suspension bracket is fixedly installed on the top of crucible through thermoscreen,
The bottom of described crucible is provided with crucible push rod;
Described crucible push rod is fixedly connected with the bottom of crucible through burner hearth thermal insulation layer;
Described crucible is made up of square main body, triangle tip, seed crystal pickup groove and fixing lug boss, and fixing lug boss is arranged on the top of square main body, and triangle tip is excessively connected between square main body and seed crystal pickup groove;
Described crucible suspension bracket is hung on the top of crucible by fixing lug boss.
Beneficial effect of the present invention:
Temperature field provided by the invention vertical direction gradient Mobile Method prepares the method for platy-monocrystal, large-size flaky monocrystalline can be prepared, and the growth cycle of single crystal is short, yield rate is high, crystal utilization ratio is high, production cost is low, the platy-monocrystal of preparation can meet the requirement of some large size special window gate materials.
Temperature field provided by the invention vertical direction gradient Mobile Method prepares the device of platy-monocrystal, by division plate, burner hearth is vertically divided into multiple relatively independent warm area, each warm area independent heating, independent thermometric, independent control, certain thermograde or power gradient is presented by the temperature of different warm area or power control realization burner hearth in the vertical direction, at crucible, heating element, when crystal is motionless, by controlling the temperature of different warm area and warm field gradient or power controls and the continuous movement of power gradient, meet the thermograde of the long crystal boundary face of crystal constantly required for movement, raw material Automatic-heating is realized by many warm area interlock temperature controls, automatic vaccination and shouldering, automatic long brilliant, and the simulation realizing long crystal boundary face can graphic.This apparatus structure is simple, convenient and practical.
Accompanying drawing explanation
Fig. 1 crucible structure schematic diagram of the present invention;
Fig. 2 structural representation of the present invention;
The brilliant schematic diagram of Fig. 3 the present invention temperature field vertical direction gradient moving long;
Reference numeral: 1, crucible suspension bracket, 2, thermoscreen, 3, heating element, 4, crucible, 5, alumina melt, 6, warm area division plate, 7, single crystal, 8, seed crystal, 9, burner hearth thermal insulation layer, 10, crucible push rod, 401, square main body, 402, triangle is most advanced and sophisticated, and 403, seed crystal pickup groove, 404, fixing lug boss.
Embodiment
Below in conjunction with embodiment, the present invention is further elaborated.
A kind of temperature field vertical direction gradient Mobile Method prepares the method for platy-monocrystal, adopt resistance-type heating element horizontally disposed at top end opening and bottom is provided with the both sides of the flats crucible of seed crystal pickup groove, by division plate, burner hearth is vertically divided into multiple relatively independent warm area, each warm area independent heating, independent thermometric, independent control, by the temperature of different warm area or the control realization burner hearth in the vertical direction of heating power be temperature or power gradient change, at crucible, heating element, in the fixed situation of crystal, by the continuous movement to the temperature control of different warm area and the continuous movement of warm field gradient or heating power control and power gradient, meet crystal long crystal boundary face constantly movement be adjusted to required thermograde, raw material Automatic-heating is realized by many warm area interlock temperature controls, automatic vaccination and shouldering, automatic long brilliant, the width of described crucible is 10 ~ 200mm, and length is 50 ~ 1000mm, is highly 100 ~ 2000mm, described heating element is heating element of tungsten, molybdenum heating element, graphite heater or zirconium diboride composite ceramic heating unit, by heating element, described arranges that the warm field upper temp formed is high, temperature of lower is low, described platy-monocrystal preparation flow is: feed-close the door-vacuumize-heat-melting sources-warm field gradient or power gradient start vertical movement-melt interface move up-inoculate-shouldering-crystal isauxesis-crystal growth terminates-warm field gradient or power gradient continue the vertically mobile crystalline temp that makes and be down to room temperature-open fire door-taking-up crystal, the brilliant process of whole length, when crucible, heating element, crystal are motionless, by to the warm field gradient of different warm area or the continuous movement of power gradient, realize single crystal preparation.
As shown in the figure: a kind of device preparing platy-monocrystal for temperature field as above vertical direction gradient Mobile Method, this device comprises crucible 4, multiple heating element 3, multiple warm area division plate 6, thermoscreen 2, burner hearth thermal insulation layer 9 and crucible suspension bracket 1, described burner hearth thermal insulation layer 9 top end opening, thermoscreen 2 removably connects with the top of burner hearth thermal insulation layer 9 and can form closed space, described crucible 4 is vertically arranged in the enclosed space that thermoscreen 2 and burner hearth thermal insulation layer 9 formed, crucible 4 is flats and top end opening, seed crystal pickup groove 403 is provided with bottom it, described heating element 3 is in strip, and the both sides that are arranged on crucible 4 parallel with crucible 4 length direction, heating element 3 end winding support is arranged on burner hearth thermal insulation layer 9, described warm area division plate 6 ringwise, its annular outer wall is fixedly connected with burner hearth thermal insulation layer 9 inwall, annular inner wall and crucible 4 running fit, described warm area division plate 6 is disposed between multiple heating element 3, one end of described crucible suspension bracket 1 is fixedly installed on the top of crucible 4 through thermoscreen 2, the bottom of described crucible 4 is provided with crucible push rod 10, crucible push rod 10 is fixedly connected with the bottom of crucible 4 through burner hearth thermal insulation layer 9, described crucible 4 is by square main body 401, triangle tip 402, seed crystal pickup groove 403 and fixing lug boss 404 form, fixing lug boss 404 is arranged on the top of square main body 401, triangle tip 402 is excessively connected between square main body 401 and seed crystal pickup groove 403, described crucible suspension bracket 1 is hung on the top of crucible 4 by fixing lug boss 404.
During use, first in crucible 4, load seed crystal 8 and crystal growth material, then crucible 4 is pushed burner hearth thermal insulation layer 9 inner position, load onto thermoscreen 2, close upper furnace door, vacuumize, start heating, the melting sources in crucible 4 becomes alumina melt 5, then controls warm field gradient and starts vertical movement, crystal isauxesis, after crystal growth terminates, control warm field gradient and continue vertically to move reduction crystalline temp to room temperature, open fire door, take off thermoscreen 2, then with crucible suspension bracket 1 and crucible push rod 10, crucible 4 is taken out in burner hearth thermal insulation layer 9.
The present invention forms multiple relatively independent warm area by warm area division plate 6 in crucible 4 outside, each warm area independent heating, independent thermometric, independent control, certain thermograde or power gradient is presented in vertical direction by the temperature control realization burner hearth of different warm area, at crucible, heating element, in the fixed situation of crystal, by controlling the temperature of different warm area and warm field gradient or power controls and the continuous movement of power gradient, meet the thermograde of the long crystal boundary face of crystal constantly required for movement, raw material Automatic-heating is realized by many warm area interlock temperature controls, automatic vaccination and shouldering, automatic long brilliant, and the simulation realizing long crystal boundary face can graphic.This apparatus structure is simple, convenient and practical.
The present invention may be used for preparing large-size flaky monocrystalline, and the growth cycle of single crystal is short, yield rate is high, crystal utilization ratio is high, production cost is low, and the platy-monocrystal of preparation can meet the requirement of some large size special window gate materials.
Claims (10)
1. a warm field vertical direction gradient Mobile Method prepares the method for platy-monocrystal, it is characterized in that: adopt resistance-type heating element horizontally disposed at top end opening and bottom is provided with the both sides of the flats crucible of seed crystal pickup groove, by division plate, burner hearth is vertically divided into multiple relatively independent warm area, each warm area independent heating, independent thermometric, independent control, by the temperature of different warm area or the control realization burner hearth in the vertical direction of heating power be temperature or power gradient change, at crucible, heating element, in the fixed situation of crystal, by the continuous movement to the temperature control of different warm area and the continuous movement of warm field gradient or heating power control and power gradient, meet crystal long crystal boundary face constantly movement be adjusted to required thermograde, raw material Automatic-heating is realized by many warm area interlock temperature controls, automatic vaccination and shouldering, automatic long brilliant.
2. temperature field as claimed in claim 1 vertical direction gradient Mobile Method prepares the method for platy-monocrystal, it is characterized in that: the width of described crucible is 10 ~ 200mm, and length is 50 ~ 1000mm, is highly 100 ~ 2000mm.
3. temperature field as claimed in claim 1 vertical direction gradient Mobile Method prepares the method for platy-monocrystal, it is characterized in that: described heating element is heating element of tungsten, molybdenum heating element, graphite heater or zirconium diboride composite ceramic heating unit.
4. temperature field as claimed in claim 1 vertical direction gradient Mobile Method prepares the method for platy-monocrystal, it is characterized in that: by heating element, described arranges that the warm field upper temp formed is high, temperature of lower is low.
5. temperature field as claimed in claim 1 vertical direction gradient Mobile Method prepares the method for platy-monocrystal, it is characterized in that: described platy-monocrystal preparation flow is: feed-close the door-vacuumize-heat-melting sources-warm field gradient or power gradient start vertical movement-melt interface move up-inoculate-shouldering-crystal isauxesis-crystal growth terminates-warm field gradient or power gradient continue the vertically mobile crystalline temp that makes and be down to room temperature-open fire door-taking-up crystal, the brilliant process of whole length, at crucible, heating element, when crystal is motionless, by to the warm field gradient of different warm area or the continuous movement of power gradient, realize single crystal preparation.
6. prepare the device of platy-monocrystal for temperature field as claimed in claim 1 vertical direction gradient Mobile Method for one kind, it is characterized in that: this device comprises crucible (4), multiple heating element (3), multiple warm area division plate (6), thermoscreen (2), burner hearth thermal insulation layer (9) and crucible suspension bracket (1), described burner hearth thermal insulation layer (9) top end opening, thermoscreen (2) removably connects with the top of burner hearth thermal insulation layer (9) and can form closed space, described crucible (4) is vertically arranged in the enclosed space that thermoscreen (2) and burner hearth thermal insulation layer (9) formed, crucible (4) is in flats and top end opening, seed crystal pickup groove (403) is provided with bottom it, described heating element (3) is in strip, and the both sides that are arranged on crucible (4) parallel with crucible (4) length direction, heating element (3) end winding support is arranged on burner hearth thermal insulation layer (9), described warm area division plate (6) ringwise, its annular outer wall is fixedly connected with burner hearth thermal insulation layer (9) inwall, annular inner wall and crucible (4) running fit, described warm area division plate (6) is disposed between multiple heating element (3), one end of described crucible suspension bracket (1) is fixedly installed on the top of crucible (4) through thermoscreen (2).
7. temperature field as claimed in claim 6 vertical direction gradient Mobile Method prepares the device of platy-monocrystal, it is characterized in that: the bottom of described crucible (4) is provided with crucible push rod (10).
8. temperature field as claimed in claim 7 vertical direction gradient Mobile Method prepares the device of platy-monocrystal, it is characterized in that: described crucible push rod (10) is fixedly connected with through the bottom of burner hearth thermal insulation layer (9) with crucible (4).
9. temperature field as claimed in claim 6 vertical direction gradient Mobile Method prepares the device of platy-monocrystal, it is characterized in that: described crucible (4) is made up of square main body (401), triangle tip (402), seed crystal pickup groove (403) and fixing lug boss (404), fixing lug boss (404) is arranged on the top of square main body (401), and triangle tip (402) are excessively connected between square main body (401) and seed crystal pickup groove (403).
10. temperature field as claimed in claim 9 vertical direction gradient Mobile Method prepares the device of platy-monocrystal, it is characterized in that: described crucible suspension bracket (1) is hung on the top of crucible (4) by fixing lug boss (404).
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105951170A (en) * | 2016-06-30 | 2016-09-21 | 云南中科鑫圆晶体材料有限公司 | Germanium single crystal growth furnace and germanium single crystal growth temperature control method based on growth furnace |
| CN105951168A (en) * | 2016-05-20 | 2016-09-21 | 中山大学 | Large-area ABX3 type perovskite crystal film growing method and device |
| CN106521615A (en) * | 2016-12-08 | 2017-03-22 | 北京鼎泰芯源科技发展有限公司 | InP crystal growth furnace based on VGF (Vertical Gradient Freeze) method |
| WO2018023335A1 (en) * | 2016-08-01 | 2018-02-08 | 三和德盛（洛阳）蓝宝石晶体制造有限公司 | Method and apparatus for preparing sapphire crystal by moving temperature-field gradient |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102127803A (en) * | 2011-03-08 | 2011-07-20 | 中国科学院上海硅酸盐研究所 | Growth method of rectangular specially-shaped sapphire crystal |
| CN102154684A (en) * | 2011-03-09 | 2011-08-17 | 元亮科技有限公司 | Novel temperature gradient crystal oriented growth method |
| CN102517624A (en) * | 2011-12-16 | 2012-06-27 | 华中科技大学 | Multi-segment temperature control crystal growing furnace |
| CN102787350A (en) * | 2012-09-03 | 2012-11-21 | 上海硅酸盐研究所中试基地 | Device and method of growing 500-1000mm long bismuth germanate crystals by descent method |
| CN102828230A (en) * | 2012-09-03 | 2012-12-19 | 上海硅酸盐研究所中试基地 | Growing device and method for growing wide plate-shaped bismuth germanate crystal according to descent method |
| CN103806101A (en) * | 2012-11-15 | 2014-05-21 | 上海中电振华晶体技术有限公司 | Growth method and equipment of square sapphire crystal |
| CN104805502A (en) * | 2014-01-27 | 2015-07-29 | 上海怡英新材料科技有限公司 | Method for producing relaxor ferroelectric single crystal PMN-PT by using vertical freezing technology |
-
2015
- 2015-12-15 CN CN201510928101.XA patent/CN105420809A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102127803A (en) * | 2011-03-08 | 2011-07-20 | 中国科学院上海硅酸盐研究所 | Growth method of rectangular specially-shaped sapphire crystal |
| CN102154684A (en) * | 2011-03-09 | 2011-08-17 | 元亮科技有限公司 | Novel temperature gradient crystal oriented growth method |
| CN102517624A (en) * | 2011-12-16 | 2012-06-27 | 华中科技大学 | Multi-segment temperature control crystal growing furnace |
| CN102787350A (en) * | 2012-09-03 | 2012-11-21 | 上海硅酸盐研究所中试基地 | Device and method of growing 500-1000mm long bismuth germanate crystals by descent method |
| CN102828230A (en) * | 2012-09-03 | 2012-12-19 | 上海硅酸盐研究所中试基地 | Growing device and method for growing wide plate-shaped bismuth germanate crystal according to descent method |
| CN103806101A (en) * | 2012-11-15 | 2014-05-21 | 上海中电振华晶体技术有限公司 | Growth method and equipment of square sapphire crystal |
| CN104805502A (en) * | 2014-01-27 | 2015-07-29 | 上海怡英新材料科技有限公司 | Method for producing relaxor ferroelectric single crystal PMN-PT by using vertical freezing technology |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105951168A (en) * | 2016-05-20 | 2016-09-21 | 中山大学 | Large-area ABX3 type perovskite crystal film growing method and device |
| CN105951168B (en) * | 2016-05-20 | 2018-08-17 | 中山大学 | Large area ABX3Type perovskite crystal film growth method and device |
| CN105951170A (en) * | 2016-06-30 | 2016-09-21 | 云南中科鑫圆晶体材料有限公司 | Germanium single crystal growth furnace and germanium single crystal growth temperature control method based on growth furnace |
| WO2018023335A1 (en) * | 2016-08-01 | 2018-02-08 | 三和德盛（洛阳）蓝宝石晶体制造有限公司 | Method and apparatus for preparing sapphire crystal by moving temperature-field gradient |
| CN106521615A (en) * | 2016-12-08 | 2017-03-22 | 北京鼎泰芯源科技发展有限公司 | InP crystal growth furnace based on VGF (Vertical Gradient Freeze) method |
| CN106521615B (en) * | 2016-12-08 | 2022-12-27 | 珠海鼎泰芯源晶体有限公司 | InP crystal growth furnace based on VGF method |
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Application publication date: 20160323 |