CN115074674A - Vacuum film forming device adopting electromagnetic wave heating - Google Patents
Vacuum film forming device adopting electromagnetic wave heating Download PDFInfo
- Publication number
- CN115074674A CN115074674A CN202210920295.9A CN202210920295A CN115074674A CN 115074674 A CN115074674 A CN 115074674A CN 202210920295 A CN202210920295 A CN 202210920295A CN 115074674 A CN115074674 A CN 115074674A
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- crucible
- electromagnetic wave
- wave heating
- receiving unit
- shell
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 38
- 238000001816 cooling Methods 0.000 claims abstract description 29
- 238000006243 chemical reaction Methods 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000007789 sealing Methods 0.000 claims abstract description 14
- 238000002347 injection Methods 0.000 claims abstract description 12
- 239000007924 injection Substances 0.000 claims abstract description 12
- 239000000919 ceramic Substances 0.000 claims description 5
- 238000009529 body temperature measurement Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 12
- 238000000151 deposition Methods 0.000 abstract description 6
- 239000012808 vapor phase Substances 0.000 abstract description 5
- 238000012546 transfer Methods 0.000 abstract description 4
- 230000003685 thermal hair damage Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 238000000859 sublimation Methods 0.000 description 10
- 230000008022 sublimation Effects 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a vacuum film forming device adopting electromagnetic wave heating, which comprises a device body and a reaction chamber, wherein the device body comprises a shell, a crucible is arranged in the shell, an electromagnetic wave heating coil is arranged in the shell and positioned outside the crucible, an active receiving unit is arranged in the crucible, sealing parts are fixedly connected to two sides of the active receiving unit, a cooling component is arranged on one side of the shell, supports are fixedly connected to two sides of the crucible, a gas injection unit is arranged on one side of the interior of the active receiving unit, and a temperature measuring unit is arranged on the other side of the interior of the active receiving unit. The vacuum film forming apparatus using electromagnetic wave heating sublimates a source by a non-contact electromagnetic wave heating method using a vapor phase transfer deposition method, and forms a cooling means in a housing formed outside a crucible to prevent thermal damage of a substrate.
Description
Technical Field
The invention relates to the technical field of vacuum film forming devices, in particular to a vacuum film forming device adopting electromagnetic wave heating.
Background
The substrate is a basic material for manufacturing a PCB, generally, the substrate is a copper clad laminate, in the manufacturing of a single-sided printed circuit board and a double-sided printed circuit board, a hole processing, chemical copper plating, electrolytic copper plating, etching and the like are selectively performed on a substrate material, namely the copper clad laminate, to obtain a required circuit pattern, the manufacturing of another type of multilayer printed circuit board also takes a core thin copper clad laminate as a base, and a conductive pattern layer and a prepreg are alternately laminated and bonded together at one time to form interconnection between more than 3 conductive pattern layers, and a method for forming a thin film on the substrate is various, such as a coating method, a printing method, a thermal evaporation method, a physical vapor deposition method, a chemical vapor deposition method and a gas image moving deposition method.
In recent years, many vacuum film forming apparatuses using a vapor phase moving deposition method have been developed, but in the vapor phase moving deposition method, a residue is generated in a slit where a source is placed due to non-uniform temperature of a sublimation source, the thickness of the source deposited on a substrate is not uniform due to non-uniform discharge of the sublimation source, which makes large-area application difficult, and in addition, in order to make the temperature of the sublimation source uniform, i.e., prevent the sublimation source from being re-solidified, a plurality of heating units must be used, which causes problems of complicated design and high cost.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a vacuum film forming device adopting electromagnetic wave heating, which solves the problems that when a vapor phase moving deposition method is adopted, residues are generated in a slit for placing a source due to the non-uniform temperature of a sublimation source, the thickness of the source deposited on a substrate is non-uniform due to the non-uniform discharge of the sublimation source, the design is complex, and the cost is high.
In order to achieve the purpose, the invention is realized by the following technical scheme: a vacuum film forming device adopting electromagnetic wave heating comprises a device body and a reaction chamber, wherein the device body comprises a shell, a crucible is arranged in the shell, an electromagnetic wave heating coil is arranged in the shell and outside the crucible, an active receiving unit is arranged in the crucible, and both sides of the source receiving unit are fixedly connected with sealing members, one side of the housing is provided with a cooling member, and both sides of the crucible are fixedly connected with a bracket, one side inside the source receiving unit is provided with a gas injection unit, and the other side in the source receiving unit is provided with a temperature measuring unit, the reaction chamber is positioned below the device body, the reaction chamber comprises an inlet and an outlet, a substrate is arranged between the inlet and the outlet, rollers are arranged inside the reaction chamber and below the substrate, and a disassembly part is arranged between the reaction chamber and the device body.
Preferably, one side of each of the gas injection unit and the temperature measurement unit penetrates the crucible and extends to the outside of the crucible.
Preferably, the housing comprises a first housing, a second housing and a base, and the bottom of the bracket is fixedly connected with the top of the base.
Preferably, the crucible includes a nozzle part disposed at one side of a top of the crucible, the nozzle part including a first nozzle part and a second nozzle part, the first nozzle part and the second nozzle part forming a slit therebetween.
Preferably, the cooling member includes a first cooling member located inside the base and a second cooling member located outside the housing.
Preferably, an insulating ceramic is connected between the crucible and the support and outside the sealing element.
Advantageous effects
The invention provides a vacuum film forming device adopting electromagnetic wave heating. Compared with the prior art, the method has the following beneficial effects: the vacuum film forming device adopting electromagnetic wave heating comprises a device body, wherein a crucible is arranged in the shell, an electromagnetic wave heating coil is arranged in the shell and positioned outside the crucible, an active receiving unit is arranged in the crucible, sealing parts are fixedly connected to both sides of the active receiving unit, a cooling member is arranged on one side of the shell, supports are fixedly connected to both sides of the crucible, a gas injection unit is arranged on one side of the interior of the active receiving unit, a temperature measuring unit is arranged on the other side of the interior of the active receiving unit, a reaction chamber is positioned below the device body and comprises an inlet and an outlet, a substrate is arranged between the inlet and the outlet, rollers are arranged in the interior of the reaction chamber and below the substrate, a dismounting part is arranged between the reaction chamber and the device body, and the source is sublimated by a non-contact electromagnetic wave heating method by using a vapor phase transfer deposition method, and a cooling means is formed in a housing formed outside the crucible to prevent thermal damage of the substrate.
Drawings
FIG. 1 is a cross-sectional view of a structure of the present invention;
FIG. 2 is a sectional view showing a state where the structure of the present invention is connected to a reaction chamber.
In the figure: 200-apparatus body, 210-housing, 211-first housing, 212-second housing, 213-base, 220-crucible, 221-nozzle component, 221 a-first nozzle component, 221 b-second nozzle component, 222-slit, 230-electromagnetic wave heating coil, 240-source receiving unit, 250-seal, 260-cooling member, 261-first cooling member, 262-second cooling member, 270-holder, 271-insulating ceramic, 280-gas injection unit, 290-temperature measuring unit, 300-reaction chamber, 310-inlet, 320-outlet, 330-roller, 340-substrate, 350-disassembly part.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
Referring to fig. 1-2, the present invention provides a technical solution: a vacuum film forming apparatus using electromagnetic wave heating includes an apparatus body 200 and a reaction chamber 300, the inside of the reaction chamber 300 can be maintained in a vacuum state by a vacuum pump, the apparatus body 200 includes a housing 210, the housing 210 is designed to be detachable from the reaction chamber 300 through a base 213, but is not limited thereto, the reaction chamber 300 can also be installed on the housing 210, a crucible 220 is provided inside the housing 210, the crucible 220 is made of an insulating material, the electromagnetic wave phenomenon occurs in the crucible 220 due to a magnetic field generated by an electromagnetic wave heating coil 230, the crucible 220 generates heat by the generated eddy current phenomenon using the principle of electromagnetic wave heating, the crucible 220 can be made of at least one material selected from boron nitride, silicon carbide, copper, graphite, molybdenum, nickel, tantalum, and tungsten, the electromagnetic wave heating coil 230 is provided inside the housing 210 and outside the crucible 220, an active receiving unit 240 is provided inside the crucible 220, and a sealing member 250 is fixedly connected to both sides of the source receiving unit 240, the sealing member 250 may form a connection part with the source receiving unit 240 by a screw form, a cooling member 260 is provided to one side of the housing 210, a supporter 270 is fixedly connected to both sides of the crucible 220, a gas injection unit 280 is provided to one side of the inside of the source receiving unit 240, a temperature measuring unit 290 is provided to the other side of the inside of the source receiving unit 240, the reaction chamber 300 is located below the apparatus body 200, the reaction chamber 300 includes an inlet 310 and an outlet 320, a substrate 340 is provided between the inlet 310 and the outlet 320, a roller 330 is provided to the inside of the reaction chamber 300 and below the substrate 340, and a detaching part 350 is provided between the reaction chamber 300 and the apparatus body 200.
The electromagnetic heating coil 230 is a portion surrounding the crucible 220, and the electromagnetic heating coil 230 is positioned at a position other than a position where the nozzle member 221 is formed, and is wound on the entire surface of the crucible 220 or on one side or three sides of the crucible 220, the electromagnetic heating coil 230 uses an electromagnetic current generated by a magnetic field as a heat source, since the crucible 220 made of a metal material is positioned at the electromagnetic wave heating coil 230, eddy current caused by the phenomenon of electromagnetic waves is generated in the crucible 220 and the electromagnetic wave heating principle of heating the crucible 220 by joule heat is applied, the electromagnetic wave heating coil 230 may be composed of a copper coil, and a cooling water passage may be provided to allow cooling water to flow in a interim, prevent arc plasma generated in the electromagnetic wave heating coil 230 and the crucible 220, block radiant heat generated from the crucible 220, and thus at least one of alumina, silicon nitride, and silicon carbide may be coated.
The source receiving unit 240 is formed inside the crucible 220 to receive a source of a thin film or a rear film formed on the substrate 340, the source is a source such as CdTe, and is received by the source receiving unit 240 in a powder state, a bar shape, and the like, both ends of the source receiving unit 240 form a sealing member 250 and a coupling portion sealing the source receiving unit 240, and further, when all sources received in the source receiving unit 240 are sublimated or evaporated, the coupling portion and the sealing member 250 are released and a source supplied from the source receiving unit 240 is additionally obtained, if the source receiving unit 240 receives two or more sources, a plurality of source receiving units 240 are formed inside the crucible 220, and a source coupling portion is additionally formed to couple the respective sources sublimated or evaporated in the respective units, and at this time, the respective sources coupled from the source coupling portion are discharged through the slit 222.
When the temperature of the crucible 220 is higher than a certain temperature due to the heat generated from the electromagnetic wave heating coil 230, the source received in the source receiving unit 240 formed inside the crucible 220 is sublimated or vaporized and discharged through the slit 222 of the crucible 220.
In the present invention, one sides of the gas injection unit 280 and the temperature measurement unit 290 both penetrate the crucible 220 and extend to the outside of the crucible 220.
The gas injection unit 280 is a unit that penetrates the crucible 220, connects to the source receiving unit 240 formed at the crucible 220, in order to inject the carrier gas into the crucible 220, if the carrier gas is injected so that the sublimation source easily reaches the substrate 340 when a phenomenon occurs in which the sublimation source does not easily reach the substrate 340 due to a small pressure difference between the pressure inside the crucible 220 and the reaction chamber, at this time, the gas injection unit 280 may be connected to the source-receiving unit 240 through the sealing member 250, and may be connected to the source receiving unit 240 through a specific portion of the crucible 220, the temperature measuring unit 290 may be formed to penetrate any one of both ends of the source receiving unit 240, the gas injection unit 280 may be formed at the other side, the temperature measuring unit 290 is formed to measure the internal temperature of the source receiving unit 240, the temperature measuring unit 290 is connected to the source receiving unit 240 through the sealing member 250, and may be connected to the source receiving unit 240 through a specific portion of the crucible 220.
In the present invention, the housing 210 includes a first housing 211, a second housing 212, and a base 213, and the bottom of the bracket 270 is fixedly connected to the top of the base 213.
The base 213 connects the first housing 211 and the second housing 212 into one housing 210, the housing 210 is snap-fitted into the reaction chamber 300 while maintaining a vacuum state of the reaction chamber 300, and further, a first cooling member 261 is formed inside the base 213, and a holder 270 is fixed to the base 213 so that the crucible 220 is positioned inside the housing 210.
In the present invention, the crucible 220 includes a nozzle part 221, the nozzle part 221 is disposed at one side of the top of the crucible 220, the nozzle part 221 includes a first nozzle part 221a and a second nozzle part 221b, a slit 222 is formed between the first nozzle part 221a and the second nozzle part 221b, the nozzle part 221 is formed integrally with the crucible 220 and protrudes outside the housing 210, the nozzle part 221 conducts heat generated from the crucible 220 so that the sublimation source in the crucible 220 can maintain a gaseous state, and the second nozzle part 221b is longer than the first nozzle part 221a and guides the sublimation source discharged through the slit 222 to flow in the direction of the first nozzle part 221 a.
In the present invention, the cooling member 260 includes a first cooling member 261 and a second cooling member 262, the first cooling member 261 being located inside the base 213, and the second cooling member 262 being located outside the housing 210.
The first cooling member 261 is formed inside the base 213 for cooling heat conducted to the housing 210 by heat generated in the crucible 220 by the electromagnetic wave heating coil 230, and further, the second cooling member 262 is formed outside the housing 210 for cooling heat conducted to the housing 210 by heat generated in the crucible 220 by the electromagnetic wave heating coil 230, and the first and second cooling members 261 and 262 cool heat conducted to the housing 210 to maintain the temperature of the housing 210 below a certain temperature, thereby effectively preventing thermal damage to the outside of the housing 210, i.e., the transfer substrate 340 near the slit 222.
In the present invention, an insulating ceramic 271 is connected between the crucible 220 and the supporter 270 and outside the sealing member 250, and the insulating ceramic 271 prevents heat transfer and electric conduction between the supporter 270 and the crucible 220.
And those not described in detail in this specification are well within the skill of those in the art.
In use, heat generated from the crucible 220 is efficiently cooled and conducted to the housing 210 to minimize damage to the substrate 340, the source is maintained at a temperature above a specific temperature at which the source sublimates or evaporates using the nozzle unit 221 so that the source can be uniformly deposited on the substrate 340, the substrate 340 is transported from the inlet 310 toward the outlet 320 by the roller 330, and the vaporized source exhausted from the slit 222 of the vacuum film forming apparatus 200 is deposited on the upper portion of the transported substrate 340.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. A vacuum film forming apparatus using electromagnetic wave heating, comprising an apparatus body (200) and a reaction chamber (300), characterized in that: the device body (200) comprises a shell (210), a crucible (220) is arranged inside the shell (210), an electromagnetic wave heating coil (230) is arranged inside the shell (210) and outside the crucible (220), an active receiving unit (240) is arranged inside the crucible (220), sealing parts (250) are fixedly connected to two sides of the active receiving unit (240), a cooling member (260) is arranged on one side of the shell (210), a bracket (270) is fixedly connected to two sides of the crucible (220), a gas injection unit (280) is arranged on one side of the interior of the active receiving unit (240), a temperature measuring unit (290) is arranged on the other side of the interior of the active receiving unit (240), the reaction chamber (300) is positioned below the device body (200), and the reaction chamber (300) comprises an inlet (310) and an outlet (320), a substrate (340) is arranged between the inlet (310) and the outlet (320), rollers (330) are arranged in the reaction chamber (300) and below the substrate (340), and a detaching part (350) is arranged between the reaction chamber (300) and the device body (200).
2. The vacuum film forming apparatus using electromagnetic wave heating according to claim 1, wherein: one sides of the gas injection unit (280) and the temperature measurement unit (290) each penetrate the crucible (220) and extend to the outside of the crucible (220).
3. The vacuum film forming apparatus using electromagnetic wave heating according to claim 1, wherein: the shell (210) comprises a first shell (211), a second shell (212) and a base (213), and the bottom of the bracket (270) is fixedly connected with the top of the base (213).
4. The vacuum film forming apparatus using electromagnetic wave heating according to claim 1, comprising: the crucible (220) comprises a nozzle component (221), the nozzle component (221) is arranged on one side of the top of the crucible (220), the nozzle component (221) comprises a first nozzle component (221a) and a second nozzle component (221b), and a slit (222) is formed between the first nozzle component (221a) and the second nozzle component (221 b).
5. A vacuum film forming apparatus using electromagnetic wave heating according to claim 3, characterized in that: the cooling member (260) includes a first cooling member (261) and a second cooling member (262), the first cooling member (261) being located inside the base (213), the second cooling member (262) being located outside the housing (210).
6. The vacuum film forming apparatus using electromagnetic wave heating according to claim 1, wherein: an insulating ceramic (271) is connected between the crucible (220) and the support (270) and outside the sealing member (250).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210920295.9A CN115074674A (en) | 2022-08-02 | 2022-08-02 | Vacuum film forming device adopting electromagnetic wave heating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210920295.9A CN115074674A (en) | 2022-08-02 | 2022-08-02 | Vacuum film forming device adopting electromagnetic wave heating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115074674A true CN115074674A (en) | 2022-09-20 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210920295.9A Pending CN115074674A (en) | 2022-08-02 | 2022-08-02 | Vacuum film forming device adopting electromagnetic wave heating |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115074674A (en) |
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2022
- 2022-08-02 CN CN202210920295.9A patent/CN115074674A/en active Pending
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