CN115070217A - Wafer marking device and marking method - Google Patents

Wafer marking device and marking method Download PDF

Info

Publication number
CN115070217A
CN115070217A CN202210725226.2A CN202210725226A CN115070217A CN 115070217 A CN115070217 A CN 115070217A CN 202210725226 A CN202210725226 A CN 202210725226A CN 115070217 A CN115070217 A CN 115070217A
Authority
CN
China
Prior art keywords
acousto
optic
laser
marking
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202210725226.2A
Other languages
Chinese (zh)
Inventor
不公告发明人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Yuanfu Semiconductor Technology Co ltd
Original Assignee
Wuxi Optical Guide Precision Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuxi Optical Guide Precision Technology Co ltd filed Critical Wuxi Optical Guide Precision Technology Co ltd
Priority to CN202210725226.2A priority Critical patent/CN115070217A/en
Publication of CN115070217A publication Critical patent/CN115070217A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/70—Auxiliary operations or equipment
    • B23K26/702—Auxiliary equipment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)

Abstract

The application relates to a wafer marking device and a marking method, wherein the device comprises: a laser for emitting pulsed laser light; the galvanometer is positioned on a light emitting path of the pulse laser and used for deflecting the pulse laser to a first character coordinate position preset on the surface of the wafer; and the acousto-optic deflection system is positioned on a light emission path between the laser and the galvanometer and used for controlling the deflection of the pulse laser according to acousto-optic signals so as to mark characters at the first character coordinate position. Through the method and the device, character positioning can be realized by utilizing deflection of the galvanometer, and graphic marking in a small range is carried out at a character coordinate position by utilizing the acousto-optic deflection system, so that the marking efficiency can be greatly improved on the premise of ensuring the marking quality.

Description

Wafer marking device and marking method
Technical Field
The application relates to the technical field of packaging, in particular to a wafer marking device and a wafer marking method.
Background
Wafer marking is an important part of a wafer packaging process, and codes are printed on each wafer in order to ensure the traceability of the whole packaging process. 20000-50000 wafers are arranged on each wafer, and the marking characters are generally only about 0.2mm-0.4mm high. Due to the fact that the number of marking characters is large and the number of characters is small, high requirements are provided for the marking efficiency and quality of the wafer.
In order to improve the efficiency, the marking speed needs to be increased as much as possible, but the increase of the marking speed causes the loss of the marking quality. Due to the mechanical inertia of the galvanometer, the characters are deformed and distorted by increasing the speed, and the speed at the corners of the characters is far lower than the linear processing speed, so that the corners are emphasized. Therefore, in order to ensure the marking quality and reduce the corner emphasis, the speed of the existing wafer marking machine is generally not more than 1000mm/s, and the efficiency is low.
Disclosure of Invention
The application provides a wafer marking device and a wafer marking method, which aim to solve the problem that in the prior art, in order to guarantee marking quality, marking efficiency is low. The technical scheme of the application is as follows:
according to a first aspect of embodiments of the present application, there is provided a wafer marking device, the device including: a laser for emitting pulsed laser light; the galvanometer is positioned on a light emitting path of the pulse laser and used for deflecting the pulse laser to a first character coordinate position preset on the surface of the wafer; and the acousto-optic deflection system is positioned on a light emission path between the laser and the galvanometer and used for controlling the deflection of the pulse laser according to acousto-optic signals so as to mark characters at the first character coordinate position.
Further, the acousto-optic deflection system comprises: the acousto-optic deflection assembly is used for receiving the acousto-optic signal and controlling the deflection angle of the pulse laser according to the frequency of the acousto-optic signal; and the acousto-optic deflection memory is positioned between the acousto-optic deflection assembly and the galvanometer and used for blocking acousto-optic deflection zero-order laser beams and acousto-optic deflection working frequency laser beams.
Further, the acousto-optic deflection assembly includes: a first acousto-optic deflector for controlling movement of the pulsed laser in a first direction; and a second acoustic light deflector for controlling movement of the pulsed laser light in a second direction to form a two-dimensional pattern at the first character coordinate position.
Further, the acousto-optic deflection frequency of the acousto-optic deflection component is 110-170 MHz.
Further, the apparatus further comprises: and the lens is positioned on one side of the galvanometer, which is far away from the acousto-optic deflection system, and is used for focusing the pulse laser.
Further, the lens is a telecentric lens.
Further, the laser frequency of the laser is 350KHz-1 MHz.
According to a second aspect of the embodiments of the present application, there is provided a wafer marking method for a wafer marking device as described in any one of the above first aspects, the method including: the laser emits pulse laser; after the marking signal is received, deflecting a galvanometer to deflect the pulse laser to a first character coordinate position preset on the surface of the wafer; and after the galvanometer deflects, the acousto-optic deflection system controls the deflection of the pulse laser according to an acousto-optic signal, and character marking is carried out at the first character coordinate position.
Further, the method further comprises: after character marking is finished at the first character coordinate position, deflecting the vibrating mirror again to deflect the pulse laser to a second character coordinate position; and after the galvanometer deflects again, the acousto-optic deflection system controls the deflection of the pulse laser according to an acousto-optic signal, and character marking is carried out at the second character coordinate position.
The technical scheme provided by the embodiment of the application at least has the following beneficial effects:
in an embodiment of the present application, a wafer marking device is provided, the device including: a laser for emitting pulsed laser light; the galvanometer is positioned on a light emitting path of the pulse laser and used for deflecting the pulse laser to a first character coordinate position preset on the surface of the wafer; and the acousto-optic deflection system is positioned on a light emission path between the laser and the galvanometer and used for controlling the deflection of the pulse laser according to acousto-optic signals so as to mark characters at the first character coordinate position. Through the embodiment of the application, character positioning can be realized by utilizing deflection of the galvanometer, and graphic marking in a small range is carried out at the character coordinate position by utilizing the acousto-optic deflection system, so that the marking efficiency can be greatly improved on the premise of ensuring the marking quality.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the application and are not to be construed as limiting the application.
Fig. 1 is a schematic structural diagram of a wafer marking device according to an embodiment of the present disclosure;
fig. 2 is a schematic flow chart of a wafer marking method according to an embodiment of the present application.
Reference numerals:
1-laser 2-acousto-optic deflection assembly 3-acousto-optic deflection memory
4-galvanometer 5-lens 6-wafer
Detailed Description
In order to make the technical solutions of the present application better understood by those of ordinary skill in the art, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings.
It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in sequences other than those illustrated or described herein. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present application, as detailed in the appended claims.
It should be noted that, the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data for presentation, analyzed data, etc.) referred to in the present application are both information and data authorized by the user or sufficiently authorized by each party.
Wafer marking is an important part of a wafer packaging process, and codes are printed on each wafer in order to ensure the traceability of the whole packaging process. 20000-50000 wafers are arranged on each wafer, and the marking characters are generally only about 0.2mm-0.4mm high. Due to the fact that the number of marking characters is large and the number of characters is small, high requirements are provided for the marking efficiency and quality of the wafer.
In order to improve the efficiency, the marking speed needs to be increased as much as possible, but the increase of the marking speed causes the loss of the marking quality.
In the prior art, due to the mechanical inertia of the galvanometer, the characters are deformed and distorted by increasing the speed, and the speed of the corners of the characters is far lower than the linear processing speed, so that the corners are emphasized. Therefore, in order to ensure the marking quality and reduce the corner emphasis, the speed of the existing wafer marking machine is generally not more than 1000mm/s, and the efficiency is low.
Based on this, this application embodiment provides a wafer marking device, as shown in fig. 1, the device includes: a laser 1 for emitting pulsed laser light; the galvanometer 4 is positioned on a light emitting path of the pulse laser and used for deflecting the pulse laser to a first character coordinate position preset on the surface of a wafer 6; and the acousto-optic deflection system is positioned on a light emission path between the laser 1 and the galvanometer 4 and used for controlling the deflection of the pulse laser according to acousto-optic signals so as to mark characters at the first character coordinate position.
In the embodiment of the present application, the laser 1 may emit pulsed laser, and the laser frequency of the laser 1 may be 350KHz to 1 MHz.
In the present embodiment, character positioning is provided by deflection of the galvanometer 4. In the prior art, because the galvanometer deflection is restrained by mechanical inertia, the speed is improved to bring the problems of character deformation, distortion, corner emphasis and the like, in the wafer marking device, the galvanometer 4 is only used for character positioning and does not edit character graphs in a small range, and the character editing in the small range is realized by the acousto-optic deflection system.
In the embodiment of the present application, as shown in fig. 1, the acousto-optic deflection system may include an acousto-optic deflection component 2 and an acousto-optic deflection memory 3, where the acousto-optic deflection component 2 may be configured to receive an acousto-optic signal and control a deflection angle of the pulsed laser according to a frequency level of the acousto-optic signal; the acousto-optic deflection memory 3 may be located between the acousto-optic deflection component 2 and the galvanometer 4 for blocking acousto-optic deflection of the zero order laser beam and passage of the acousto-optic deflection of the operating frequency laser beam.
In the embodiment of the present application, the acousto-optic deflection assembly 2 may receive an acousto-optic signal, and may deflect a pulse laser to generate a light beam, so that a marking pattern may be formed in a small range, and the acousto-optic deflection frequency of the acousto-optic deflection assembly 2 may be 110 and 170 MHz. The general principle is that radio frequency signals are received with different frequency deflection angles.
In the embodiment of the present application, the acousto-optic deflection assembly 2 may include a first acousto-optic deflector and a second acousto-optic deflector, and the first acousto-optic deflector may be used to control the movement of the pulsed laser in the first direction; the second acoustic light deflector may be configured to control movement of the pulsed laser light in a second direction to form a two-dimensional pattern at the first character coordinate position.
In the embodiment of the present application, the first direction and the second direction may be perpendicular to each other.
In practical application, a first acousto-optic deflector and a second acousto-optic deflector can be orthogonally installed, the first acousto-optic deflector can be responsible for marking of an x axis, the second acousto-optic deflector can be responsible for marking of a y axis, and when an acousto-optic signal is respectively given to the first acousto-optic deflector and an acousto-optic signal is given to the second acousto-optic deflector, a two-dimensional pattern can be formed.
In the embodiment of the present application, the acousto-optic deflection memory 3 is located on the light emission path between the acousto-optic deflection component 2 and the galvanometer 4, and can be used for blocking acousto-optic deflection zero-order laser beams and pass acousto-optic deflection working frequency laser beams, that is, it can be used for blocking pulse laser when the acousto-optic deflection component 2 is not in operation and can let pulse laser pass through when the acousto-optic deflection component 2 is in operation. The acousto-optic deflection memory 3 is characterized in that a copper material is adopted, water is used for circulating cooling, and the phenomenon that the heat is too large when a zero-order laser beam is blocked can be avoided.
In the embodiment of the present application, when the acousto-optic deflection component 2 is not in operation, the pulse laser is deflected to an angle, and since the pulse laser is not required to emit light, the pulse laser will strike the acousto-optic deflection memory 3, so as to block the acousto-optic deflection zero-order laser beam. When the acousto-optic deflection component 2 works, the deflection of the pulse laser can be controlled through an acousto-optic signal, so that the pulse laser can pass through the acousto-optic deflection storage 3.
In addition, because the acousto-optic deflection component 2 is realized by utilizing the diffraction principle of light, when the acousto-optic deflection component 2 works, other diffracted light exists, and the acousto-optic deflection memory 3 can block the diffracted light.
In the embodiment of the present application, as shown in fig. 1, the wafer marking device may further include a lens 5, where the lens 5 is located on a side of the galvanometer 4 away from the acousto-optic deflection system, and is used for focusing the pulsed laser.
In the embodiment of the present application, the lens 5 may be a telecentric lens, so that the uniformity of the characters in the processing breadth can be ensured.
In the embodiment of the application, the characteristics that the deflection range of the vibrating mirror is large, but the efficiency is low, and the deflection efficiency of the acousto-optic deflection component 2 is high but the range is small are fully utilized, character positioning is realized by utilizing the deflection of the vibrating mirror, and the pattern marking in a small range is carried out at the character coordinate position by utilizing the acousto-optic deflection system to form a marked pattern, so that the marking efficiency is greatly improved on the premise of ensuring the marking quality.
The embodiment of the present application further provides a wafer marking method, which is used for any one of the wafer marking devices in the embodiments of the present application, and as shown in fig. 1 and fig. 2, the method includes:
s201: the laser 1 emits pulsed laser light;
s203: after the marking signal is received, the galvanometer 4 deflects to deflect the pulse laser to a first character coordinate position preset on the surface of the wafer 6;
s205: after the galvanometer 4 deflects, the acousto-optic deflection system controls the deflection of the pulse laser according to an acousto-optic signal, and character marking is carried out at the first character coordinate position.
In the embodiment of the present application, the laser 1 is kept in a normally-emitting state during the working time.
In the embodiment of the present application, after the galvanometer 4 receives the marking signal, the galvanometer deflects by a certain angle to deflect the pulse laser to the first character coordinate position.
In the embodiment of the application, after the acousto-optic deflection system receives the marking signal and the galvanometer 4 deflects, the zero level is changed to the working frequency, the acousto-optic deflection system controls the pulse laser to deflect, and the pulse laser moves in a small range to mark characters. That is, the galvanometer 4 is deflected first, and after the galvanometer is deflected to the right position, the acousto-optic deflection system starts to work again.
In this embodiment of the application, after marking of one character is completed on the surface of the wafer 6, marking of the next character may be performed, that is, the wafer marking method may further include:
after character marking is finished at the first character coordinate position, deflecting the vibrating mirror 4 again to deflect the pulse laser to a second character coordinate position;
and after the galvanometer 4 deflects again, the acousto-optic deflection system controls the deflection of the pulse laser according to an acousto-optic signal, and character marking is carried out at the second character coordinate position.
In this embodiment, the second character coordinate position and the first character coordinate position may be located on a certain chip on the wafer at the same time, may be located on different chips on the wafer, and may also be located on different wafers, which is not limited in this embodiment.
In the embodiment of the present application, the laser marking speed of the wafer marking device is completely determined by the frequency of the laser 1. Specifically, the acousto-optic deflection frequency of the acousto-optic deflection component 2 is as high as 110MHz-170MHz, which is much greater than 1MHz of the laser, so that the acousto-optic deflection time of the acousto-optic deflection component 2 can be ignored. On the other hand, the acousto-optic deflection component 2 receives acousto-optic frequency signals to realize beam deflection without being constrained by mechanical inertia.
In the embodiment of the application, the laser marking time of the wafer marking device is composed of two parts, wherein one part is the time t for the galvanometer 4 to provide positioning deflection 0 The second part is the time t for marking characters and graphs by the acousto-optic deflection system 1 . For conventional wafer marking apparatus and marking method, t 0 And t 1 Are determined by the galvanometer 4.
T in the embodiment of the present application 0 Determined by the galvanometer 4, t 1 Determined by the acousto-optic deflection system.
Specifically, the speed of marking the character pattern by acousto-optic deflection is calculated as follows, the laser frequency P is 1MHz, each laser point time is t 1/P1 us, the marking point distance d of the general laser wafer is 8um, the transformation laser deflection speed v is (1/t) d 8000mm/s, and the acousto-optic deflection marking speed is 8 times that of the traditional wafer marking mode.
According to the conventional wafer marking method, general experience t 0 ：t 1 1:2 (slightly different depending on the large spacing of the characters and the galvanometer performance). Based on the above, the time T required by the conventional wafer marking method can be calculated 3 ＝3t 0 Time T required by wafer marking mode in embodiment of the application 4 ＝t 0 +t 1 /8＝1.25t 0 And T is 3 :T 4 The marking efficiency of the embodiment of the present application is about 2.4 times that of the conventional wafer marking method, as can be seen from 2.4: 1.
The detailed description of the components and the operation of the wafer marking device for performing the wafer marking method in the embodiment of the present application has been described in detail in the above embodiment of the wafer marking device, and will not be described in detail here.
Other embodiments of the present application will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.
It will be understood that the present application is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the application is limited only by the appended claims.

Claims (9)

1. A wafer marking device, the device comprising:
a laser for emitting pulsed laser light;
the galvanometer is positioned on a light emitting path of the pulse laser and used for deflecting the pulse laser to a first character coordinate position preset on the surface of the wafer;
and the acousto-optic deflection system is positioned on a light emission path between the laser and the galvanometer and used for controlling the deflection of the pulse laser according to acousto-optic signals so as to mark characters at the first character coordinate position.
2. The wafer marking device as claimed in claim 1, wherein the acousto-optic deflection system comprises:
the acousto-optic deflection assembly is used for receiving the acousto-optic signal and controlling the deflection angle of the pulse laser according to the frequency of the acousto-optic signal;
and the acousto-optic deflection memory is positioned between the acousto-optic deflection assembly and the galvanometer and used for blocking acousto-optic deflection zero-order laser beams and acousto-optic deflection working frequency laser beams.
3. The wafer marking device as claimed in claim 2, wherein the acousto-optic deflection assembly comprises:
a first acousto-optic deflector for controlling movement of the pulsed laser in a first direction;
and a second acoustic light deflector for controlling movement of the pulsed laser light in a second direction to form a two-dimensional pattern at the first character coordinate position.
4. The wafer marking device as claimed in claim 2, wherein the acousto-optic deflection frequency of the acousto-optic deflection assembly is 110-170 MHz.
5. The wafer marking device as claimed in claim 1, wherein the device further comprises:
and the lens is positioned on one side of the galvanometer, which is far away from the acousto-optic deflection system, and is used for focusing the pulse laser.
6. The wafer marking device as claimed in claim 5, wherein the lens is a telecentric lens.
7. The wafer marking device as claimed in claim 1, wherein the laser frequency of the laser is greater than or equal to 350KHz-1 MHz.
8. A wafer marking method for the wafer marking device as claimed in any one of claims 1 to 7, the method comprising:
the laser emits pulse laser;
after the marking signal is received, deflecting a galvanometer to deflect the pulse laser to a first character coordinate position preset on the surface of the wafer;
and after the galvanometer deflects, the acousto-optic deflection system controls the deflection of the pulse laser according to an acousto-optic signal, and character marking is carried out at the first character coordinate position.
9. The wafer marking method as claimed in claim 8, further comprising:
after character marking is finished at the first character coordinate position, deflecting the vibrating mirror again to deflect the pulse laser to a second character coordinate position;
and after the galvanometer deflects again, the acousto-optic deflection system controls the deflection of the pulse laser according to an acousto-optic signal, and character marking is carried out at the second character coordinate position.
CN202210725226.2A 2022-06-23 2022-06-23 Wafer marking device and marking method Pending CN115070217A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210725226.2A CN115070217A (en) 2022-06-23 2022-06-23 Wafer marking device and marking method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210725226.2A CN115070217A (en) 2022-06-23 2022-06-23 Wafer marking device and marking method

Publications (1)

Publication Number Publication Date
CN115070217A true CN115070217A (en) 2022-09-20

Family

ID=83254665

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210725226.2A Pending CN115070217A (en) 2022-06-23 2022-06-23 Wafer marking device and marking method

Country Status (1)

Country Link
CN (1) CN115070217A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115805365A (en) * 2023-01-17 2023-03-17 武汉铱科赛科技有限公司 Composite deflection laser filling scanning system, method, device and equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115805365A (en) * 2023-01-17 2023-03-17 武汉铱科赛科技有限公司 Composite deflection laser filling scanning system, method, device and equipment
CN115805365B (en) * 2023-01-17 2023-05-26 武汉铱科赛科技有限公司 Composite deflection laser filling scanning system, method, device and equipment

Similar Documents

Publication Publication Date Title
US8680430B2 (en) Controlling dynamic and thermal loads on laser beam positioning system to achieve high-throughput laser processing of workpiece features
US5329090A (en) Writing on silicon wafers
CN102449863B (en) Laser processing systems using through-the-lens alignment of a laser beam with a target feature
US20200298344A1 (en) Laser processing apparatus and laser processing method
TWI637803B (en) Laser processing apparatus and method for processing a workpiece by operation of a laser tool
JP2007237242A (en) Laser beam machining apparatus
CN115070217A (en) Wafer marking device and marking method
US5171964A (en) High accuracy, high flexibility, energy beam machining system
WO2003080283A1 (en) Laser beam positioning device for laser machining, apparatus
TWI837284B (en) Laser processing device and laser processing method
CN107745589A (en) A kind of laser marking machine and its marking method
CN110076451B (en) Laser processing device and laser focal length compensation method
EP3922399A2 (en) Laser processing apparatus and processing method
CN111722477A (en) Integrated circuit proton direct writing system
CN108213743A (en) Laser processing device and laser processing
JP2018140417A (en) Laser processing device and laser processing method
JP2004142082A (en) Method and device for working plan
WO1992002034A1 (en) High accuracy, high flexibility energy beam machining system
US4467170A (en) Electron beam drilling apparatus
US5145551A (en) High accuracy, high flexibility energy beam machining system
CN107671426B (en) Laser marking device and marking method thereof
CN213876307U (en) Integrated circuit proton direct writing system
JP2002260982A (en) Drawing method using variable area electron beam lithography device
KR100513530B1 (en) A device for electron beam welding
JPS6324535A (en) Electron beam machining device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
TA01 Transfer of patent application right

Effective date of registration: 20240514

Address after: 214028 No. 7, Xingchuang Fourth Road, Xinwu District, Wuxi City, Jiangsu Province

Applicant after: Jiangsu Yuanfu Semiconductor Technology Co.,Ltd.

Country or region after: China

Address before: 214028 floor 1, building 1, No. 20, Xinxi Road, Xinwu District, Wuxi City, Jiangsu Province

Applicant before: Wuxi optical guide precision technology Co.,Ltd.

Country or region before: China

TA01 Transfer of patent application right