CN111722477A - Integrated circuit proton direct writing system - Google Patents

Integrated circuit proton direct writing system Download PDF

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Publication number
CN111722477A
CN111722477A CN202010698630.6A CN202010698630A CN111722477A CN 111722477 A CN111722477 A CN 111722477A CN 202010698630 A CN202010698630 A CN 202010698630A CN 111722477 A CN111722477 A CN 111722477A
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Prior art keywords
proton
control system
control
laser
integrated circuit
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CN202010698630.6A
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Inventor
丁红杰
欧阳劲志
郭成明
冯雷
苏建华
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Zhengzhou Zhongdian New Energy Automobile Co ltd
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Zhengzhou Zhongdian New Energy Automobile Co ltd
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Priority to CN202010698630.6A priority Critical patent/CN111722477A/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2065—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam using corpuscular radiation other than electron beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components

Abstract

The invention discloses an integrated circuit proton direct writing system, which comprises a master control system, a laser control system and an X, Y deflection control system, wherein the master control system converts designed graph and structure data into control data, simultaneously transmits the control data to the laser control system and a X, Y deflection control system, respectively controls the generation and screening of a proton beam and the movement track of the proton beam X, Y, and drives the proton beam onto a corrosion-resistant material according to a designed path, thereby completing the task of carving; and the proton beam with MeV level energy has strong penetrating power, small space divergence, deeper carved nick and small fluctuation, can write deeper, thinner and more accurate, can write more information on the unit area of a workpiece, can write multilayer information, and has the characteristic of being capable of processing an ultra-nano large-scale integrated circuit chip.

Description

Integrated circuit proton direct writing system
Technical Field
The invention relates to the technical field of writing systems, in particular to an integrated circuit proton direct writing system.
Background
Proton Beam Writing (PBW) is a new ion beam technology that has been rapidly developed in recent years, and the prior art schemes similar to proton beam writing include laser direct writing (rdw) and Electron Beam Writing (EBW);
the existing laser direct writing technology mainly utilizes the variable-intensity laser beam to expose the resist material coated on the surface of a substrate in variable dose, forms the required relief contour on the surface of the resist layer after development, the basic working principle of the laser direct writing system is that a high-precision laser beam is controlled by a computer to scan, the laser direct writing technology has the main problems of optical proximity effect caused by laser focal spots, limitation of the resolution of laser direct writing, stable control of laser power and noise suppression, in addition, the depth of the processed profile is related to various factors such as exposure intensity, scanning speed, resist material, developing solution formula and temperature state, developing time and the like, and the change of any factor can cause the error of the depth of the profile;
the main working principle of the existing Electron Beam Writing (EBW) technology is that electron-electron collisions, which result in high-angle multiple scattering of incident electrons to form "pear-shaped" ionization in the material, are utilized as the primary interaction between the electron beam and the resist material, although high aspect ratio structures can be made by additional steps, electron beam writing of structures with lateral resolution below 100nm can only be achieved on very thin resists;
as can be seen, the conventional laser direct writing technique and Electron Beam Writing (EBW) have major problems such as low resolution, high noise, unstable power control, and an error in profile depth.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention aims to provide an integrated circuit proton direct writing system, which can write more information on a unit area of a workpiece and write multi-layer information by utilizing the characteristics of large and stable proton mass, small laser fluctuation, deepening, thinning and straightening, and effectively overcoming the problems of small resolution, large noise, unstable power control, error in profile depth and the like, and has the characteristics of high precision, high efficiency and high quality.
In order to achieve the purpose, the technical scheme of the invention is realized as follows:
an integrated circuit proton direct writing system comprises a master control system, a laser control system, and an X, Y deflection control system:
the master control system converts the generated and designed graph and structure data into control data of a direct writing system, and simultaneously transmits the control data to the laser control system and the X, Y deflection control system;
the laser control system receives control data of the master control system, converts information carried by the control data into femtosecond lasers with different powers, converts the femtosecond lasers into Mev-level proton beams and screens the beams;
the X, Y deflection control system receives the control data of the master control system, and transmits the information carried by the control data to the X, Y controller, the X, Y controller drives the electromagnetic deflection component to deflect through controlling the X, Y control module, so that the proton beam does accurate scanning processing in the X, Y direction according to the designed track, and the writing task is completed.
Furthermore, the general control system is a computer, a design drawing and programming software automatically generate a control program, the femtosecond laser generator is controlled to generate femtosecond laser, and meanwhile the X, Y deflection scanning control system is controlled to perform proton direct writing.
Furthermore, the laser control system comprises a laser controller, a femtosecond laser generator, a target and a proton beam bunching and gating system, wherein the laser controller controls the femtosecond laser generator to generate femtosecond laser, the femtosecond laser bombards the target to generate a Mev proton beam, the proton beam passes through the proton beam bunching and gating system to filter out other particle beams except the proton beam in a mixed particle beam generated by the laser, and the proton beam is selected to pass through.
Further, the laser controller is used for receiving a computer-side control command and sending the command to the femtosecond laser generator.
Further, the femtosecond laser generator is used for receiving the control command transmitted by the laser controller and generating the femtosecond laser with variable power according to the control command.
Further, the target is a 'micro-structural target' which can obtain quasi-unienergy proton beams and is composed of a metal film and a piece of proton-rich material on the back of the metal film.
Furthermore, the proton bunching and gating system comprises a buncher and a gate, wherein the buncher can be 3 sections, namely a radial matching section, a shaping section and a smooth bunching section, can provide periodic strong focusing for a proton beam from a proton source and can bunch the beam flow in the longitudinal direction, and the gate mainly functions to filter out other particle beams except the proton beam in a mixed particle beam generated by laser and select the proton beam to pass through.
Furthermore, the X, Y deflection control system comprises a X, Y deflection scanning control system and a proton direct writing head, and the X, Y deflection scanning control system drives the electromagnetic deflection assembly to deflect through a control module for controlling the X, Y direction, so that the proton beam is precisely scanned and processed in the X, Y direction according to the designed track.
Furthermore, the X, Y deflection scanning control system comprises an industrial personal computer, processing control software, an electromagnetic deflection assembly and a X, Y control module, wherein the industrial personal computer controls the processing control software to set a working origin to generate an automatic processing program, and controls a motor to drive the electromagnetic deflection assembly through the X, Y direction, so that the proton beam is accurately scanned and processed in the X, Y direction according to a designed track.
Furthermore, the proton direct writing head mainly uses a proton direct writing technology to print information transmitted by a proton beam on a corrosion-resistant material on a workbench, so as to complete the task of accurate carving of the proton direct writing head.
The invention has the beneficial effects that:
according to the integrated circuit proton direct writing system provided by the invention, a focused proton beam with Mev level proton beam energy is used for directly writing a nano-scale microstructure on a resist material by a proton beam writing technology; and the proton beam is used for writing, because the proton has higher mass (1800 times of the electron mass), the proton beam with MeV-level energy has strong penetrating power and small space divergence, the high depth-to-width ratio obtained by using the proton beam for writing is more reasonable, the nick is deeper, and the proton beam has small volatility, can write more deepening, thinner and straighter, can write more information on the unit area of the workpiece, can write multilayer information, and can process the characteristics of an ultra-nano large-scale integrated circuit chip.
Drawings
Fig. 1 is a general block diagram of the present invention.
FIG. 2 is a general block diagram of the XY deflection scanning general control system.
Fig. 3 is a graph of the effect of proton beam writing.
FIG. 4 is an electromagnetic deflection diagram of the present invention.
Wherein: 1. the system comprises a computer, a laser controller, a femtosecond laser generator, a target, a proton bunching and gating system, a deflection scanning control system 6, X, Y, a proton direct writing head 7, a workbench 8, an industrial personal computer 9, processing control software 10, an X-direction controller 12, a Y-direction controller 13, an electromagnetic deflection assembly 13, a.3MeV proton beam writing, b laser beam writing and c.50keV electron beam writing.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the following further describes the technical solution of the present invention with reference to the drawings and the embodiments.
Referring to fig. 1-4, an integrated circuit proton direct write system, comprising: the total control system, the laser control system and the X, Y deflection control system are as follows: the master control system converts the generated designed graph and structure data into control data of a direct-writing system, and simultaneously transmits the control data to the laser control system and the X, Y deflection control system; the laser control system receives control data of the master control system, converts information carried by the control data into femtosecond lasers with different powers, converts the femtosecond lasers into Mev-level proton beams and screens the beams; the X, Y deflection control system receives control data of the master control system, transmits information carried by the control data to the X, Y direction controller, and drives the electromagnetic deflection assembly to work from the X, Y direction controller, so that the proton beam deflects according to a designed track, and the proton beam is accurately scanned and processed in the X, Y direction according to the designed track, and a writing task is completed;
the general control system is a computer 1, graphic data and structural data such as design drawings, programming software and the like are automatically generated into control data of a direct-writing system, the control data are converted into control programs, a femtosecond laser generator 3 is controlled to generate femtosecond laser, meanwhile, the general control system controls X, Y deflection scanning control system 6, X, Y deflection scanning control system 6 drives an electromagnetic deflection assembly 13 to deflect through a control module controlling the X, Y direction, proton beams are enabled to be accurately scanned and processed in the X, Y direction according to design tracks, and information transmitted by the proton beams is printed on an anti-corrosion material on a workbench 8 by utilizing a proton direct-writing technology;
the position of the workbench 8 is fixedly arranged;
the laser control system comprises a laser controller 2, a femtosecond laser generator 3, a target 4, a proton beam converging and gating system 5, wherein the laser controller 2 controls the femtosecond laser generator 3 to generate femtosecond lasers with different powers, the femtosecond lasers bombard the target 4 to generate Mev proton beams, the proton beams pass through the proton beam converging and gating system 5, other particle beams except the proton beams in mixed particle beams generated by the lasers are filtered out, and the specially selected proton beams pass through the mixed particle beams; one end of the laser controller 2 is connected with the computer 1, and the other end is connected with the femtosecond laser generator 3, receives a control command from the computer end, converts the command and sends the converted command to the femtosecond laser generator 3; the femtosecond laser generator 3 receives the control command transmitted by the laser controller 2 and generates femtosecond laser with variable power according to the control command;
the target 4 receives the bombardment of the femtosecond laser transmitted from the femtosecond laser generator 3 and generates a Mev proton beam; the proton beam-bunching and gating system 5 comprises a bunching device and a gating device, wherein the structure of the bunching device can be 3 sections, namely a radial matching section RMS, a shaping section SH and a smooth bunching section GB, the proton beam-bunching device can provide periodic strong focusing for a proton beam from a proton source and can bunch beam flow in the longitudinal direction at the same time, and the gating device can filter out other particle beams except the proton beam in a mixed particle beam generated by laser, and particularly selects the proton beam to pass through;
the target 4 is a 'micro-structural target' which can obtain quasi-unienergy proton beams and is composed of a layer of metal film and a piece of material rich in protons on the back of the film; the target adopts a metal film, so that the femtosecond laser acts on the metal film to generate a large amount of super-thermionic electrons, and the super-thermionic electrons penetrate through the metal film to establish a strong sheath electric field; the purpose of using proton rich material to form spots behind the membrane is two: the number of the emitted protons is increased, and the protons in the points smaller than the transverse size of the accelerating sheath are accelerated by a uniform electric field, so that quasi-unipotent proton beams can be obtained;
the femtosecond is a time unit, 1 femtosecond is 1 x 10-15Seconds, only 1 part per billion of a second; the femtosecond laser is a technical means that the human can obtain the shortest pulse under the laboratory condition at present, the femtosecond laser emits huge power instantly, and scientists predict that the femtosecond laser plays an important role in generating new energy in the 21 st century;
the femtosecond laser generator 3 consists of four parts: oscillators, stretchers, amplifiers, and compressors;
the X, Y deflection scanning control system 6 comprises an industrial personal computer 9, processing control software 10 and electromagnetic deflection assemblies 13 and X, Y control modules, wherein the industrial personal computer 9 controls the processing control software 10 to set a working origin to generate an automatic processing program, and the electromagnetic deflection assemblies 13 are driven to work by controlling the control modules in the X, Y direction, so that a proton beam deflects according to a designed track and is accurately scanned and processed in the X, Y direction, and the high-density and high-precision three-dimensional direct writing of protons is realized;
the proton direct writing head 7 uses proton direct writing technology to write the information transmitted by the proton beam onto the corrosion resistant material on the workbench 8, so as to complete the precise carving task of the proton direct writing head;
the proton direct writing technology is a technology which is developed in recent years and directly writes a nanoscale structure on a resist material such as photoresist without a mask by using a high-energy focused proton beam.
The principle of the X, Y deflection scanning control system 6 for controlling the deflection of the proton direct write head 7 is as follows: the protons moving at high speed are converged into a high-energy proton beam under the action of the focusing lens, the control of the motion track of the proton beam is actually the control of the motion track of the protons, and when the protons moving at high speed enter a magnetic field along a certain angle, the protons are acted by the lorentz force and deflected, as shown in fig. 4, the proton is in a motion condition after being incident into a uniform magnetic field with the length of L1;
the proton is vertically incident into a uniform magnetic field with magnetic induction intensity as a velocity V, and the velocity direction of the particle is changed by the magnetic field force (that is, lorentz force) received by the proton as follows:
Figure BDA0002592233470000081
in the formula: q-proton charge; v is the speed of movement of the son; b-magnetic field intensity; theta is the included angle between the motion speed and the magnetic field intensity; n-number of turns of coil; i-coil exciting current; mu.s0-vacuum permeability; l0-coil magnetic path length.
Since the lorentz force is always perpendicular to the direction of motion of the charge, the protons will make a circular motion, the lorentz force F providing a centripetal force, i.e.:
Figure BDA0002592233470000082
from the formula (1) and the formula (2)
Figure BDA0002592233470000083
The motion track of the proton in the uniform magnetic field is a circular motion with a radius of R, when the motion speed V (determined by the accelerating voltage) of the proton and the coil structure parameter N, l0In the fixed case, the deflection radius of the proton beam is inversely proportional to the magnitude of the excitation current, and when the proton leaves the magnetic field area, the proton will move along the circleThe linear direction makes a linear motion until the target plate surface is reached.
A set of deflection device is additionally arranged on a beam proton path away from a proton gun to form X-direction and Y-direction deflection magnetic fields, and the deflection radius of the proton beam can be controlled according to the formula (3), so that the precise control of the motion track of the proton beam is realized, and the design requirement is met.
The working principle of the invention is as follows: during work, a corrosion-resistant material is fixedly placed on a workbench 8, meanwhile, a pattern to be engraved or data to be imprinted are input into a computer 1, the computer 1 converts received pattern and structure data into direct-writing system control data and respectively transmits the direct-writing system control data to a laser controller 2 and an X, Y deflection scanning control system 6, the laser controller 2 converts and processes received commands and transmits the direct-writing system control data to a femtosecond laser generator 3, the femtosecond laser generator 3 generates femtosecond lasers with different powers according to different commands and emits the femtosecond lasers to bombard a target 4 to generate Mev-level proton beams, the proton beams pass through a proton beam converging and gating system 5 to filter out other particle beams except the proton beams in mixed particle beams generated by the lasers, and the specially selected proton beams reach a proton direct writing head 7; x, Y the deflection scanning control system 6 converts the received command from the computer 1, and drives the electromagnetic deflection assembly 13 to work by controlling the control module X, Y direction, so that the proton beam deflects according to the designed track, and performs accurate scanning processing, thereby completing the workpiece processing task.
The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.

Claims (10)

1. An integrated circuit proton direct writing system is characterized by comprising a master control system, a laser control system and an X, Y deflection control system:
the master control system converts the generated and designed graph and structure data into control data of a direct writing system, and simultaneously transmits the control data to the laser control system and the X, Y deflection control system;
the laser control system receives control data of the master control system, converts information carried by the control data into femtosecond lasers with different powers, converts the femtosecond lasers into Mev-level proton beams and screens the beams;
the X, Y deflection control system receives the control data of the master control system, and transmits the information carried by the control data to the X, Y controller, the X, Y controller drives the electromagnetic deflection component to deflect through controlling the X, Y control module, so that the proton beam does accurate scanning processing in the X, Y direction according to the designed track, and the writing task is completed.
2. The integrated circuit proton direct writing system according to claim 1, wherein the general control system is a computer (1), and a design drawing and programming software automatically generate a control program to control the femtosecond laser generator (3) to generate femtosecond laser and control the X, Y deflection scanning control system (6) to perform proton direct writing.
3. The integrated circuit proton direct writing system according to claim 2, wherein the laser control system comprises a laser controller (2), a femtosecond laser generator (3), a target (4) and a proton beam converging and gating system (5), the laser controller (2) controls the femtosecond laser generator (3) to generate femtosecond laser, the femtosecond laser bombards the target (4) to generate Mev proton beams, the proton beams pass through the proton converging and gating system (5), particle beams except the proton beams in the mixed particle beam generated by the laser are filtered out, and the proton beams are selected to pass through.
4. An integrated circuit proton direct writing system according to claim 3, wherein said laser controller (2) is configured to receive computer-side control commands and send the commands to the femtosecond laser generator (3).
5. An integrated circuit proton direct writing system according to claim 3, wherein the femtosecond laser generator (3) is configured to receive the control command transmitted by the laser controller (2) and generate the femtosecond laser with variable power according to the control command.
6. An integrated circuit proton direct writing system according to claim 3, wherein said target (4) is a "micro-structured target" capable of obtaining quasi-unienergy proton beam, the micro-structured target being composed of a metal film and a piece of proton-rich material on the back of the film.
7. An integrated circuit proton direct write system according to claim 3, wherein said proton bunching and gating system (5) comprises a bunching device and a gating device, said bunching device can be 3 segments, namely a radial matching segment, a shaping segment and a smooth bunching segment, and can provide periodic strong focusing for proton beams from proton sources and simultaneously bunch beam streams in the longitudinal direction, and said gating device mainly functions to filter out other particle beams except proton beams in mixed particle beams generated by laser and select proton beams to pass through.
8. The direct-writing integrated circuit proton system according to claim 2, wherein the X, Y deflection control system comprises a X, Y deflection scanning control system (6) and a proton direct-writing head (7), and the X, Y deflection scanning control system (6) drives the electromagnetic deflection assembly (13) to deflect by a control module for controlling X, Y direction, so that the proton beam is precisely scanned and processed in X, Y direction according to the designed track.
9. The integrated circuit proton direct writing system according to claim 8, wherein the X, Y deflection scanning control system (6) comprises an industrial personal computer (9), processing control software (10), an electromagnetic deflection component (13) and a X, Y control module, the industrial personal computer (9) controls the processing control software (10) to set a working origin to generate an automatic processing program, and controls a motor to drive the electromagnetic deflection component through X, Y direction to enable the proton beam to perform precise scanning processing in X, Y direction according to a designed track.
10. An integrated circuit proton direct write system according to claim 9, characterized in that the proton direct write head (7) mainly uses proton direct write technology to write the information transmitted by the proton beam onto the resist material on the worktable (8) to complete the precise engraving task of the proton direct write head.
CN202010698630.6A 2020-07-20 2020-07-20 Integrated circuit proton direct writing system Pending CN111722477A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112843497A (en) * 2021-01-05 2021-05-28 中国科学院上海高等研究院 Proton beam scanning device and scanning method based on radio frequency deflection cavity technology
CN112870560A (en) * 2021-01-05 2021-06-01 中国科学院上海高等研究院 Proton beam solid angle distribution device based on radio frequency deflection cavity technology

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112843497A (en) * 2021-01-05 2021-05-28 中国科学院上海高等研究院 Proton beam scanning device and scanning method based on radio frequency deflection cavity technology
CN112870560A (en) * 2021-01-05 2021-06-01 中国科学院上海高等研究院 Proton beam solid angle distribution device based on radio frequency deflection cavity technology
CN112843497B (en) * 2021-01-05 2022-09-16 中国科学院上海高等研究院 Proton beam scanning device and scanning method based on radio frequency deflection cavity technology
CN112870560B (en) * 2021-01-05 2022-09-20 中国科学院上海高等研究院 Proton beam solid angle distribution device based on radio frequency deflection cavity technology

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