CN115065267A - 具备软开关特性的变频最小开关损耗算法 - Google Patents

具备软开关特性的变频最小开关损耗算法 Download PDF

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CN115065267A
CN115065267A CN202210658492.8A CN202210658492A CN115065267A CN 115065267 A CN115065267 A CN 115065267A CN 202210658492 A CN202210658492 A CN 202210658492A CN 115065267 A CN115065267 A CN 115065267A
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CN115065267B (zh
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梁光耀
刘广财
宋加旺
刘红伟
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Shanghai Haojue Electrical System Engineering Co ltd
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Jiaxing Fuer Electronic Technology Co ltd
Shanghai Baozhun Power Technology Co ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0054—Transistor switching losses
    • H02M1/0058—Transistor switching losses by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
    • H02P27/04—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
    • H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
    • H02P27/08—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters with pulse width modulation
    • H02P27/12—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters with pulse width modulation pulsing by guiding the flux vector, current vector or voltage vector on a circle or a closed curve, e.g. for direct torque control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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Abstract

本发明公开了具备软开关特性的变频最小开关损耗算法，包括在三相电压源变频器上使用PWM调制器，生成三相两电平变频器的驱动信号Sa,Sb和Sc，公开了驱动信号Sa,Sb和Sc的调制波va **、vb **、vc **的表达式。本发明的具备软开关特性的变频最小开关损耗算法，能够在全攻略因数范围内，在电流最大处停止相应相位的开关动作；全攻略因数范围内，实现软开关的过程；系统效率高；便于应用。

Description

具备软开关特性的变频最小开关损耗算法
技术领域
本发明属于电力电子变流技术领域，具体涉及具备软开关特性的变频最小开关损耗算法。
背景技术
随着新型宽禁带半导体(如SiC,GAN等)在电机驱动和新能源并网的广泛应用，一些负面效应也随之而来。由于开关频率的提高，随之带来的开关损耗也会提高，这会加大散热器的提交，影响效率和功率密度的提升。同时，变换器往往工作在连续电流模式，由硬开关带来的损耗，也会大大影响系统的效率。
发明内容
本发明从上述提到的问题入手，提出了应用于三相两电平逆变器中具备软开关特性的变开关频率最小开关损耗PWM调制算法，本发明采用的技术方案是：具备软开关特性的变频最小开关损耗算法，包括在三相电压源变频器上使用PWM调制器，生成三相两电平变频器的驱动信号Sa,Sb和Sc，驱动信号Sa,Sb和Sc的调制波va **、vb **、vc **的表达式为：
Figure BDA0003689459210000011
其中T7＝kTz，k取值0或1，其中TS表示开关频率的周期，Ti和Tj表示在第n个扇区相邻矢量的作用时间，
Figure BDA0003689459210000021
Figure BDA0003689459210000022
表示负载功率因数，
Figure BDA0003689459210000023
mi为是系统调制度，由交流电压的幅值闭上母线电压的一半获得，n为为所在扇区序列，ωe为电压空间矢量的旋转角度，t为时间，
Figure BDA0003689459210000024
分别为第i个和第j个矢量在abc分量上的开关状态，vα为电压分量在α轴上的分量，iα为电流分量在α轴上的分量，vβ为电压分量在β轴上的分量，iβ为电流分量在β轴上的分量。
作为上述技术方案的优选，确定调制波va **、vb **、vc **后，再分别确定三相的载波的开关频率，其中每相的开关频率为：
Figure BDA0003689459210000025
其中
Figure BDA0003689459210000026
Coss是开关管的寄生电容值，
Figure BDA0003689459210000027
va/b/co为a/b/c相对电容中点o的电压，Vdc为母线电压，Cds为Mosfet上的栅源级电容，vds为Mosfet上的栅源级电压，vo为输出电压，L为输出电感，iavg是a相的平均电流，d是a相开关的占空比，由调制波确定：
Figure BDA0003689459210000031
作为上述技术方案的优选，所述k取值由扇区分配式确定，扇区分配式为
Figure BDA0003689459210000032
灰色区域k＝1,白色区域k＝0，(a)
Figure BDA0003689459210000033
(b)
Figure BDA0003689459210000034
(c)
Figure BDA0003689459210000035
作为上述技术方案的优选，所述iavg由电流采样传感器得到。
作为上述技术方案的优选，所述开关频率在DSP中ePWM模块的移相寄存器中进行设置。
本发明的有益效果是：
1)全攻略因数范围内，在电流最大处停止相应相位的开关动作；
2)全攻略因数范围内，实现软开关的过程；
3)系统效率高；
4)便于应用。
附图说明
图1是变开关频率最小开关损耗PWM算法合成示意图；
图2是扇区分配图；
图3是开关过程瞬态波形图；
图4是三相电压源变频器拓扑与控制框图。
具体实施方式
下面将结合附图对本发明的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
在本发明的描述中，需要说明的是，术语“中心”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”、“第三”仅用于描述目的，而不能理解为指示或暗示相对重要性。
在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
具备软开关特性的变频最小开关损耗算法，包括在三相电压源变频器上使用PWM调制器，生成三相两电平变频器的驱动信号Sa,Sb和Sc，驱动信号Sa,Sb和Sc的调制波va **、vb **、vc **的表达式为：
Figure BDA0003689459210000051
其中T7＝kTz，k取值0或1，其中TS表示开关频率的周期，Ti和Tj表示在第n个扇区相邻矢量的作用时间，
Figure BDA0003689459210000052
Figure BDA0003689459210000053
表示负载功率因数，
Figure BDA0003689459210000054
mi为是系统调制度，由交流电压的幅值闭上母线电压的一半获得，n为为所在扇区序列，ωe为电压空间矢量的旋转角度，t为时间，
Figure BDA0003689459210000055
Figure BDA0003689459210000056
分别为第i个和第j个矢量在abc分量上的开关状态，vα为电压分量在α轴上的分量，iα为电流分量在α轴上的分量，vβ为电压分量在β轴上的分量，iβ为电流分量在β轴上的分量。
进一步的，确定调制波va **、vb **、vc **后，再分别确定三相的载波的开关频率，其中a相的开关频率为：
Figure BDA0003689459210000057
其中
Figure BDA0003689459210000058
Coss是开关管的寄生电容值，
Figure BDA0003689459210000061
vao为****，Vdc为****，Cds为****，vds为****，vo为***，L为*****，iavg是a相的平均电流，d是a相开关的占空比，由调制波确定：
Figure BDA0003689459210000062
进一步的，所述k取值由扇区分配式确定，扇区分配式为
Figure BDA0003689459210000063
灰色区域k＝1,白色区域k＝0，(a)
Figure BDA0003689459210000066
(b)
Figure BDA0003689459210000067
(c)
Figure BDA0003689459210000065
进一步的，所述iavg由电流采样传感器得到。
进一步的，所述开关频率在DSP中ePWM模块的移相寄存器中进行设置。通过此开关频率的设置，可以保证本专利所提出的PWM方法在任意时刻实现零电压开通。
将本发明提出的变开关频率最小开关损耗PWM应用在三相电压源逆变器上，可以适应负载的功率因数变化，继而得到最小开关损耗和零电压开通的特性，如图4所示。
值得一提的是，本发明专利申请涉及的相两电平变频器、PWM调制器等技术特征应被视为现有技术，这些技术特征的具体结构、工作原理以及可能涉及到的控制方式、空间布置方式采用本领域的常规选择即可，不应被视为本发明专利的发明点所在，本发明专利不做进一步具体展开详述。
以上详细描述了本发明的较佳具体实施例，应当理解，本领域的普通技术人员无需创造性劳动就可以根据本发明的构思做出诸多修改和变化，因此，凡本技术领域中技术人员依本发明的构思在现有技术的基础上通过逻辑分析、推理或者有限的实验可以得到的技术方案，皆应在由权利要求书所确定的保护范围内。

Claims (5)

1.具备软开关特性的变频最小开关损耗算法，其特征在于，包括在三相电压源变频器上使用PWM调制器，生成三相两电平变频器的驱动信号Sa,Sb和Sc，驱动信号Sa,Sb和Sc的调制波va **、vb **、vc **的表达式为：
Figure FDA0003689459200000011
其中T7＝kTz，k取值0或1，其中TS表示开关频率的周期，Ti和Tj表示在第n个扇区相邻矢量的作用时间，
Figure FDA0003689459200000012
Figure FDA0003689459200000013
表示负载功率因数，
Figure FDA0003689459200000014
为是系统调制度，由交流电压的幅值闭上母线电压的一半获得，n为为所在扇区序列，ωe为电压空间矢量的旋转角度，t为时间，
Figure FDA0003689459200000015
Figure FDA0003689459200000016
分别为第i个和第j个矢量在abc分量上的开关状态，vα为电压分量在α轴上的分量，iα为电流分量在α轴上的分量，vβ为电压分量在β轴上的分量，iβ为电流分量在β轴上的分量。
2.如权利要求1所述的具备软开关特性的变频最小开关损耗算法，其特征在于，确定调制波va **、vb **、vc **后，再确定每相上的载波的开关频率，开关频率为：
Figure FDA0003689459200000021
其中
Figure FDA0003689459200000022
Coss是开关管的寄生电容值，
Figure FDA0003689459200000023
va/b/co为a/b/c相对电容中点o的电压，Vdc为母线电压，Cds为Mosfet上的栅源级电容，vds为Mosfet上的栅源级电压，vo为输出电压，L为输出电感，iavg是a相的平均电流，d是a相开关的占空比，由调制波确定：
Figure FDA0003689459200000024
3.如权利要求1所述的具备软开关特性的变频最小开关损耗算法，其特征在于，所述k取值由扇区分配式确定，扇区分配式为
Figure FDA0003689459200000025
灰色区域k＝1,白色区域k＝0，(a)
Figure FDA0003689459200000026
(b)
Figure FDA0003689459200000027
(c)
Figure FDA0003689459200000028
4.如权利要求3所述的，其特征在于，所述iavg由电流采样传感器得到。
5.如权利要求4所述的，其特征在于，所述开关频率在DSP中ePWM模块的移相寄存器中进行设置。
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