CN115061293A - Improved acousto-optic device and preparation method thereof - Google Patents
Improved acousto-optic device and preparation method thereof Download PDFInfo
- Publication number
- CN115061293A CN115061293A CN202210788296.2A CN202210788296A CN115061293A CN 115061293 A CN115061293 A CN 115061293A CN 202210788296 A CN202210788296 A CN 202210788296A CN 115061293 A CN115061293 A CN 115061293A
- Authority
- CN
- China
- Prior art keywords
- single crystal
- acousto
- piezoelectric single
- thickness
- gold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims description 10
- 239000013078 crystal Substances 0.000 claims abstract description 128
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052737 gold Inorganic materials 0.000 claims abstract description 27
- 239000010931 gold Substances 0.000 claims abstract description 27
- XMORMEHMQNVRLA-UHFFFAOYSA-N [In].[Au].[Au] Chemical compound [In].[Au].[Au] XMORMEHMQNVRLA-UHFFFAOYSA-N 0.000 claims abstract description 17
- 238000000576 coating method Methods 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims abstract description 8
- 229910052738 indium Inorganic materials 0.000 claims description 34
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 34
- 238000007747 plating Methods 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000003466 welding Methods 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 238000000992 sputter etching Methods 0.000 claims description 6
- 239000013077 target material Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000000382 optic material Substances 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 238000002203 pretreatment Methods 0.000 claims description 3
- 238000004904 shortening Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 230000005540 biological transmission Effects 0.000 abstract description 11
- 230000003993 interaction Effects 0.000 abstract description 9
- 230000003287 optical effect Effects 0.000 abstract description 5
- 239000012141 concentrate Substances 0.000 abstract description 4
- 230000002441 reversible effect Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
- 239000012790 adhesive layer Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 238000002604 ultrasonography Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000009965 odorless effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/11—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves
- G02F1/113—Circuit or control arrangements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R17/00—Piezoelectric transducers; Electrostrictive transducers
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The acousto-optic device includes a high-frequency piezoelectric transducer and a transparent acousto-optic medium, the high-frequency piezoelectric transducer includes: the piezoelectric device comprises a top electrode, a bowl-shaped curved surface type piezoelectric single crystal wafer and a bottom electrode; the curved surface of the piezoelectric single chip is designed according to the range of the required modulation bandwidth and increases progressively from the center to the edge; the top electrode is gold; the bottom electrode is a gold-indium-gold combined multilayer anti-reflection coating structure and is plated on the plane side of the piezoelectric single chip; the high-frequency piezoelectric transducer is in a bowl-shaped curved surface and faces upwards, and the tail end face of the acousto-optic medium is in a wedge-shaped structure; the wedge-shaped structure is attached with a wedge-shaped fixed block with the same reverse angle. The invention concentrates the energy of the ultrasonic field to the interaction area in the acousto-optic medium more by the design of ultrasonic transmission loss, the optimum utilization design of acoustic energy and optical energy and the curved surface design of modulation bandwidth influence, reduces the edge amplitude influence of the acoustic field, inhibits the side lobe of the acoustic field, improves the quality of the high-frequency ultrasonic field and improves the modulation bandwidth of the acousto-optic device.
Description
Technical Field
The invention relates to the field of optical devices, in particular to an improved acousto-optic device and a preparation method thereof, which can concentrate the energy of an ultrasonic field to an interaction region in an acousto-optic medium more.
Background
Piezoelectric transducers are important components of acousto-optic devices, and can realize the conversion of electric energy into acoustic energy. When ultrasonic wave passes through the transparent acousto-optic medium, the optical property of the medium is changed, so that the refractive index of the medium is changed, distribution which is changed along with the intensity of the ultrasonic wave is formed, and an ultrasonic field distributed in the medium is equivalent to a phase grating and has diffraction effect on incident light. Therefore, the key points influencing the acousto-optic effect are-the directivity and convergence of the ultrasonic field wave beam, and the performance of the acousto-optic device is influenced by the fact that the good performance and the bad performance of the ultrasonic field wave beam determine the propagation direction and the energy concentration degree of the ultrasonic wave.
Referring to fig. 1, a prior art super energy transducer is shown, which generally adopts a planar longitudinal vibration type structure, specifically, a piezoelectric transducer and a transparent acousto-optic medium 4, the whole piezoelectric transducer is mounted on the transparent acousto-optic medium 4, the piezoelectric transducer specifically comprises a top electrode 1, a piezoelectric single crystal 2 and a bottom electrode (bonding layer) 3, monochromatic plane waves are superimposed due to interference of sound fields,
wherein R is a radius, P 0 To normalize the sound field intensity, Z is the distance from the sound source. Referring to fig. 2, a sound field simulation diagram of a conventional planar longitudinal vibration piezoelectric transducer is shown, and it is apparent from the diagram that most of the energy of the ultrasonic field is concentrated in the central region of the transducer, i.e., the main lobe of the ultrasonic field. Due to the diffraction of the sound field, there is still a partial energy concentration outside the main lobe, i.e. the side lobes of the ultrasound field. This will all directly affect the purity of the spectra.
In addition, the bonding process of the piezoelectric single crystal and the acousto-optic medium in the prior art is a very important problem. Because the ultrasonic power of the transducer is transmitted into the acousto-optic medium through the adhesive layer, the bottom electrode (adhesive layer) 3 in the prior art is mainly of a single-layer structure and is bonded by a single metal material or epoxy resin.
Therefore, how to overcome the problems of disordered distribution of sound field intensity, stray side lobes at the edge of the sound field and narrow modulation bandwidth action area in the acousto-optic medium, the quality of the high-frequency ultrasonic field in the acousto-optic medium is improved, the modulation bandwidth of an acousto-optic device is further improved, and the bonding efficiency of the transducer and the acousto-optic medium is further improved, which becomes a technical problem to be solved urgently in the prior art.
Disclosure of Invention
The invention aims to provide a bowl-shaped curved high-frequency piezoelectric transducer, and through the design of ultrasonic transmission loss, the design of maximum utilization of acousto-optic energy and the curved surface design of bandwidth related influence, the energy of an ultrasonic field can be concentrated to an interaction area in an acousto-optic medium more, the edge amplitude influence of the acoustic field is reduced, and the side lobe of the acoustic field is restrained, so that the quality of the high-frequency ultrasonic field is improved, and the modulation bandwidth of an acousto-optic device is further improved.
In order to achieve the purpose, the invention adopts the following technical scheme:
an improved acousto-optic device comprising:
comprises a high-frequency piezoelectric transducer and an acousto-optic medium,
the high-frequency piezoelectric transducer comprises a top electrode, a piezoelectric monocrystal and a bottom electrode;
the piezoelectric single crystal is designed according to the bandwidth range of a required modulation sound field, and the thickness of the piezoelectric single crystal is gradually increased from the center to the edge;
the top electrode is plated on the bowl-shaped curved surface side of the piezoelectric single crystal and is made of gold with the thickness of 100-500 nm;
the bottom electrode is plated on the plane side of the piezoelectric single crystal and comprises an upper bottom electrode 31, a middle bottom electrode 32 and a lower bottom electrode 33, and the gold-indium-gold combined multilayer antireflection film structure with the total plating thickness of 300-900 nm is formed;
the high-frequency piezoelectric transducer is bowl-shaped, the curved surface of the high-frequency piezoelectric transducer faces upwards and is tightly attached to a transparent acousto-optic medium 4, and the acousto-optic medium is used for bearing an ultrasonic field generated by the high-frequency piezoelectric transducer.
Optionally, for the thickness d of the piezoelectric single crystal, a formula is used
Calculating to obtain a data value, wherein v is the sound velocity of the piezoelectric single crystal, f is the required ultrasonic center frequency, and the data value is brought into a modulation bandwidth range of f 1-f 2, wherein f1 is the low frequency, f2 is the high frequency, the thickness of the piezoelectric single crystal corresponding to f1 is d1, the thickness of the piezoelectric single crystal corresponding to f2 is d2, in the frequency interval, the thickness of the piezoelectric single crystal corresponding to each frequency is decomposed and refined point by point, the thickness of d2 is used as the center of the piezoelectric single crystal, the thickness of d1 is used as the edge of the piezoelectric single crystal, and the piezoelectric single crystal gradually extends, so that a bowl-shaped piezoelectric single crystal in the thickness direction is formed.
Optionally, the thickness of the gold-indium-gold combined multilayer antireflection film structure is 50-200 nm of gold for the upper bottom electrode 31, 200-500 nm of indium for the middle bottom electrode, and 50-200 nm of gold for the lower bottom electrode.
Optionally, the bottom surface of the tail end of the acousto-optic medium is provided with a wedge-shaped structure with an angle of 10-50 degrees, the bottom of the acousto-optic medium is correspondingly provided with a wedge-shaped fixed block, the wedge-shaped fixed block and the wedge-shaped structure are in opposite correspondence, and the angles are equal.
Optionally, the angle between the wedge-shaped structure and the wedge-shaped fixing block is 30 °.
Optionally, when the acousto-optic medium is quartz and the modulation bandwidth range is 100MHz to 300MHz, the thickness of the piezoelectric single crystal corresponding to 100MHz is 36.5um, and the thickness of the piezoelectric single crystal corresponding to 300MHz is 12.17um, the thickness of the piezoelectric single crystal corresponding to each frequency is decomposed and refined point by point in the frequency interval, so as to obtain a set of data from 12.17um to 36.5um, the center thickness of the piezoelectric single crystal is set to be 12.17um, and the center thickness is increased to 36.5um towards two sides, so as to obtain a set of bowl-shaped curved piezoelectric single crystal thickness curves.
Alternatively, the length L of the piezoelectric single crystal is selected according to
Calculating to obtain the length L of the piezoelectric single crystal, wherein omega is the beam waist diameter of a Gaussian beam focused in an acousto-optic medium, the wavelength of the Gaussian beam is, and Lambda is the acoustic wavelength of the ultrasonic central working frequency;
for the width H of the piezoelectric single crystal, on the premise of selecting the proper length L of the piezoelectric single crystal, according to the formula of the Bragg diffraction efficiency of the acousto-optic device
Calculating the width H of the piezoelectric single crystal, wherein M 2 The material is acousto-optic high quality and is a quality factor for representing the characteristics of acousto-optic materials, and Ps is acoustic power.
The invention further discloses a preparation method of the acousto-optic device, which comprises the following steps:
a piezoelectric single crystal plating step S110: plating 50-200 nm of upper and lower electrode gold and 100-250 nm of indium on one side of a planar piezoelectric monocrystal with the thickness of 1-5 mm by using a magnetron sputtering coating method; plating 50-200 nm of lower bottom electrode gold and 100-250 nm of indium on the plane side of the transparent acousto-optic medium, namely the binding surface;
bottom electrode preparation step S120: tightly attaching a 100-250 nm indium surface on the piezoelectric single crystal and a 100-250 nm indium surface of the transparent acousto-optic medium by using a metal cold pressure welding bonding method to form 200-500 nm middle-bottom electrode indium and form a gold-indium-gold combined multilayer anti-reflection bottom electrode coating structure;
acoustic-optical device bonding step S130: continuously applying 5-30N pressure to the laminated planar piezoelectric single crystal and the transparent acousto-optic medium by using a pressure vice, and controlling the pressure maintaining time to be 5-60 min;
a bowl-shaped curved surface etching step S140: etching the upper surface of the piezoelectric single crystal subjected to cold welding bonding of the metal into a required bowl-shaped curved surface shape by using an ion etching method to form the piezoelectric single crystal of the bowl-shaped curved surface shape, and plating 100-500 nm of gold as a top electrode by using a magnetron sputtering coating method.
Optionally, the step S110 of plating the piezoelectric single crystal specifically includes:
s111: sequentially cleaning the piezoelectric single crystal and the transparent acousto-optic medium by adopting absolute ethyl alcohol and deionized water;
s112: deeply cleaning the piezoelectric single crystal and the transparent acousto-optic medium by adopting a plasma pretreatment method;
s113: sequentially replacing gold target material and indium target material, plating gold and indium, setting sputtering current at 0.2A and 0.5A, and deposition rate at 0.115 nm.s -1 And 0.627 nm. s -1 (ii) a And/or the presence of a gas in the gas,
the bottom electrode preparation step S120 specifically includes:
s121: aligning the two indium-plated surfaces by using a stereoscopic microscope in a dust-free environment;
s122: the two indium surfaces are bonded, the self viscosity is utilized, the two indium surfaces are properly pressed, the pressure is 1-5N, and the pressure is maintained for 1 min;
s123: transferring the compressed assembly to the position below a vice, continuously applying pressure of 5-30N, and controlling the pressure maintaining time to be 5-60 min; and/or the presence of a gas in the gas,
the step S140 of etching the bowl-shaped curved surface specifically includes:
s141: selecting electronegative gas as working gas;
s142: setting air pressure of 80mT and power of 6.5W, controlling the residence time of an ion etching point, and gradually shortening the residence time of etching from the center thickness to two edges according to the thickness of the curved surface type piezoelectric single crystal corresponding to the modulation bandwidth range;
s143: the thickness of the piezoelectric single crystal after plasma etching becomes thicker gradually from the center to the edge.
In conclusion, the invention has the following advantages:
(1) the high-frequency piezoelectric transducer with the bowl-shaped curved surface can concentrate the energy of an ultrasonic field to an interaction area in the acousto-optic medium more, reduce the influence of the edge amplitude of the sound field and inhibit the side lobe of the sound field, thereby improving the quality of the high-frequency ultrasonic field and further improving the modulation bandwidth of an acousto-optic device.
(2) The bottom electrode is a gold-indium-gold combined multilayer anti-reflection coating structure, the sound wave transmission coefficient D of the bottom electrode is optimized, the Transducer Loss (TL) and the curve (TL-F) of the relative frequency F are considered in the required modulation bandwidth range, the loss in the bandwidth range is enabled to be as small as possible and flat, and the sound wave transmission loss is reduced.
(3) The other side of the transparent acousto-optic medium is processed into a wedge-shaped structure with an angle of 10-50 degrees, preferably 30 degrees, and the other side is bonded with the wedge-shaped structure through metal cold pressure welding indium, and then a wedge-shaped lead block with the same reverse angle is tightly attached to the wedge-shaped structure, so that the returned ultrasonic wave deviates from the original path, and the superposition interference to the original path is avoided.
(4) The length and width of the bowl-shaped curved surface type piezoelectric single crystal wafer are designed according to the maximum Bragg efficiency and the optimal utilization design of sound energy and light energy, and the sound and light divergence angle is controlled and adjusted so as to improve the utilization rate of the acousto-optic interaction.
Drawings
FIG. 1 is a block diagram of a planar longitudinal vibratory piezoelectric transducer of the prior art;
fig. 2 is a sound field simulation diagram of a planar longitudinal vibration piezoelectric transducer in the prior art, specifically, fig. 2 (a) is a sound field intensity distribution diagram of the planar longitudinal vibration piezoelectric transducer, and fig. 2 (b) is a sound field simulation diagram of the planar longitudinal vibration piezoelectric transducer;
FIG. 3 is a block diagram of an improved acousto-optic device according to an embodiment of the invention;
FIG. 4 is a sound field simulation diagram of an improved acousto-optic device, in particular, FIG. 4 (a) is a sound field intensity distribution diagram of the improved acousto-optic device, and FIG. 4 (b) is a sound field simulation diagram of the improved acousto-optic device, according to an embodiment of the invention;
fig. 5 is a plot of transducer loss versus relative frequency (TL-F) for the gold-indium-gold combination of the present invention versus prior art single material gold.
The technical characteristics respectively designated by the reference numerals in the figures are as follows:
1. a top electrode; 2. a piezoelectric single crystal; 3. a bottom electrode; 31. an upper bottom electrode; 32. a mid-sole electrode; 33. a lower bottom electrode; 4. an acousto-optic medium; 5. a wedge-shaped fixing block.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
The operation of the acousto-optic device is mainly based on the Bragg diffraction principle: ultrasonic wave is transmitted in an acousto-optic medium to enable the medium to generate corresponding elastic deformation, so that the refractive index of the medium is caused to be periodically changed at intervals, and an action area of an ultrasonic field is similar to a 'volume grating', and the passing light is diffracted. When the included angle between the incident light and the sound wave surface meets the Bragg condition, diffraction light of all levels in the medium interfere with each other, diffraction light of all higher levels cancel each other, and only 0-level and + 1-level (or-1-level) diffraction light appears, namely Bragg diffraction is generated.
The invention is characterized in that: the piezoelectric single crystal is optimized, and the thickness of the piezoelectric single crystal corresponding to each frequency is decomposed and refined point by point according to the frequency range of the modulation frequency to form the piezoelectric single crystal in a bowl-shaped curved surface shape, so that the quality of an ultrasonic field is improved, and the modulation bandwidth of an acousto-optic device is improved; in addition, the single-layer bottom electrode is optimized to be a three-layer bottom electrode structure, and the sound field coupling efficiency is improved.
Further, referring to fig. 3, there is shown a block diagram of an improved acousto-optic device according to the invention, comprising a high frequency piezoelectric transducer and an acousto-optic medium 4,
wherein the high-frequency piezoelectric transducer comprises a top electrode 1, a piezoelectric single crystal 2 and a bottom electrode 3;
the piezoelectric single crystal is designed according to the bandwidth range of a required modulation sound field, and the thickness of the piezoelectric single crystal is gradually increased from the center to the edge;
the top electrode is plated on the bowl-shaped curved surface side of the piezoelectric single crystal and is made of gold with the thickness of 100-500 nm;
the bottom electrode is plated on the plane side of the piezoelectric single crystal and comprises an upper bottom electrode 31, a middle bottom electrode 32 and a lower bottom electrode 33, and the gold-indium-gold combined multilayer antireflection film structure with the total plating thickness of 300-900 nm is formed;
the high-frequency piezoelectric transducer is bowl-shaped, the curved surface of the high-frequency piezoelectric transducer faces upwards and is tightly attached to a transparent acousto-optic medium 4, and the acousto-optic medium is used for bearing an ultrasonic field generated by the high-frequency piezoelectric transducer.
Referring to fig. 3, the transparent acousto-optic medium 4 is used for carrying an ultrasonic field generated by the piezoelectric transducer, the divergence angle of the ultrasonic field is phi, and the divergence angle of the acting light is theta. Generally, in order to fully utilize the acoustic energy and the light energy, in fact, if the acoustic dispersion angle Φ is larger than the light dispersion angle θ, the waste of the acoustic energy at the edge is caused; conversely, if the light divergence angle θ is greater than the acoustic divergence angle φ, the light at the edges will not be diffracted by ultrasound waves having no suitable direction. Due to the influence of diffraction, divergence and edge effect, the energy of an ultrasonic field is not concentrated, the utilization rate of acousto-optic interaction is not high, and the modulation bandwidth is limited.
The modulation bandwidth is an important parameter of the acousto-optic device, which is a technical index for measuring whether information can be transmitted without distortion or not, and is limited by the Bragg bandwidth. When using a limited diverging beam and acoustic field, the limited angle of the beam will be spread, thus allowing bragg diffraction only in a limited acoustic frequency range.
For this reason, the piezoelectric single crystal 2 of the present invention selects the y-36 ° cut lithium niobate crystal piece that generates the longitudinal wave mode or the X-cut lithium niobate crystal piece that generates the shear wave mode, taking into consideration the length, width, and thickness of the piezoelectric single crystal.
In the present invention, the piezoelectric single crystal has a longitudinal direction, i.e., a light beam passing direction; the thickness direction of the piezoelectric single crystal, namely the sound field propagation direction; the width direction of the piezoelectric single crystal is the direction perpendicular to both the light beam passing direction and the sound field propagation direction.
(1) For the length of the piezoelectric single crystal, i.e. the direction of light beam passage. Preferably, the working light is a Gaussian beam having a light divergence angle θ
Where ω is the beam waist diameter of a Gaussian beam focused within the acousto-optic medium. Ultrasonic field divergence angle phi of
Where Λ is the acoustic wavelength of the ultrasonic center operating frequency f, i.e.
，V S Is the sound velocity of the acousto-optic dielectric material, and L is the length of the piezoelectric single crystal. Thus affecting the acousto-optic deviceThe performance parameters of the element, defining a ratio a,
. According to the principle of reasonable utilization of energy, when a is approximately equal to 1, the purpose of optimal utilization of energy can be achieved.
Therefore, for the length of the piezoelectric single crystal, it is determined
And calculating to obtain the length L of the piezoelectric single crystal, wherein omega is the beam waist diameter of a Gaussian beam focused in the acousto-optic medium, and Lambda is the acoustic wavelength of the ultrasonic central working frequency f and is the optical wavelength of the Gaussian beam.
(2) The width of the piezoelectric single crystal. On the premise of optimizing the length of a proper piezoelectric single crystal body, according to the formula of the Bragg diffraction efficiency of the acousto-optic device
Wherein M is 2 The piezoelectric single crystal is acousto-optic high-quality and is a quality factor for representing the characteristics of acousto-optic materials, wherein Ps is acoustic power, and H is the width of the piezoelectric single crystal. Therefore, to obtain a desired bragg diffraction efficiency, the influence of the width of the piezoelectric single crystal is balanced.
Therefore, for the width H of the piezoelectric single crystal, on the premise of preferably selecting the proper piezoelectric single crystal length, the Bragg diffraction efficiency formula of the acousto-optic device is adopted
Calculating the width H of a preferred piezoelectric single crystal, where M 2 The piezoelectric single crystal is acousto-optic high-quality and is a quality factor for representing the characteristics of acousto-optic materials, wherein Ps is acoustic power, and H is the width of the piezoelectric single crystal.
(3) The thickness of the piezoelectric single crystal. Since the ultrasonic wave is applied to the piezoelectric single crystal by the high-frequency electric field, the ultrasonic vibration is in the thickness direction, so the thickness of the piezoelectric single crystal is half wavelength of the ultrasonic wave, namely formula
Where v is the speed of sound of the piezoelectric single crystal and f is the desired ultrasonic center frequency.
Thus, for the thickness d of the piezoelectric single crystal, the formula is used
Calculating to obtain a data value, wherein v is the sound velocity of the piezoelectric single crystal, f is the required ultrasonic center frequency, and the data value is brought into a modulation bandwidth range of f 1-f 2, wherein f1 is the low frequency, f2 is the high frequency, the thickness of the piezoelectric single crystal corresponding to f1 is d1, the thickness of the piezoelectric single crystal corresponding to f2 is d2, in the frequency interval, the thickness of the piezoelectric single crystal corresponding to each frequency is decomposed and refined point by point, the thickness of d2 is used as the center of the piezoelectric single crystal, the thickness of d1 is used as the edge of the piezoelectric single crystal, and the piezoelectric single crystal gradually extends, so that a bowl-shaped piezoelectric single crystal in the thickness direction is formed.
Referring to fig. 4, by designing the ultrasonic transmission loss, optimally utilizing the acoustic energy and the optical energy, and designing the curved surface affected by the modulation bandwidth, the energy of the ultrasonic field can be concentrated to the interaction region in the acousto-optic medium more, the influence of the edge amplitude of the sound field is reduced, and the side lobe of the sound field is suppressed, so that the quality of the high-frequency ultrasonic field is improved, and the modulation bandwidth of the acousto-optic device is further improved.
Illustratively, quartz is taken as the required modulation bandwidth range of the acousto-optic medium, which is 100 MHz-300 MHz. The thickness of the piezoelectric single crystal required by the 100MHz corresponding design is 36.5um, the thickness of the piezoelectric single crystal required by the 300MHz corresponding design is 12.17um, and the thickness of the piezoelectric single crystal corresponding to each frequency is decomposed and refined point by point in the frequency interval, so that a group of data from 12.17um to 36.5um is obtained. The center thickness of the piezoelectric single crystal is set to be 12.17um, and the thickness is gradually increased to 36.5um towards two sides, so that a group of bowl-shaped curved surface type piezoelectric single crystal thickness designs are obtained. Therefore, by the design of the bowl-shaped curved piezoelectric single crystal, the ultrasonic field quality can be improved on the premise of optimal utilization of acoustic energy and light energy, and the purpose of improving the modulation bandwidth of the acousto-optic device is also met.
For bottom electrode, piezoelectric monocrystal and acousto-optic mediumThe process of mass bonding is a very important issue. Because the ultrasonic power of the transducer is passed through this adhesive layer into the acousto-optic medium, the adhesive layer must be low acoustic loss. The acoustic wave transmission coefficient of the bonding layer is obtained from the ultrasonic propagation theory
Where m is the ratio of acoustic impedances, i.e. m = Z 1 /Z 2 (ii) a When m ≈ 1, i.e. the bond layer acoustic impedance Z 2 Near acoustic impedance Z of acousto-optic medium 1 When the value is equal to 1, D is approximately equal to 1; still alternatively, when the thickness D' of the adhesive layer is thin (almost zero), D ≈ 1. Therefore, satisfactory results can be obtained as long as the acoustic impedance of the material of the bottom electrode bonding layer is matched with that of the acousto-optic dielectric material, or the thickness of the bonding layer is small enough.
According to the invention, a metal cold press welding process is adopted, a gold-indium-gold combined multilayer anti-reflection film coating structure of an enhanced bottom electrode (bonding layer) is selected, in the bottom electrode (bonding layer), an upper bottom electrode 31 is gold, a middle bottom electrode 32 is indium, and a lower bottom electrode 33 is gold, so that the gold-indium-gold combined multilayer anti-reflection film structure with the total coating thickness of 300-900 nm is formed; taking into account both the transducer loss and the (TL-F) curve of the relative frequency (as shown in fig. 5).
Taking the modulation bandwidth range of 100 MHz-300 MHz required by quartz design as an example, the plating thickness of the gold-indium-gold combined multilayer permeation-enhanced bottom electrode (bonding layer) coating structure is as follows in sequence: 50-200 nm of gold-3, 200-500 nm of indium-4 and 50-200 nm of gold-5. The total plating thickness of the gold-indium-gold combined multilayer permeation-enhanced bottom electrode (bonding layer) plating film structure is 300-900 nm. And adjusting the optimal value according to the optimized bonding layer transmission coefficient D, and reducing the sound wave transmission loss. From the calculation results of the TL-F curve in fig. 5, when the single-choice center frequency is 200MHz, the multilayer anti-reflection au-in-au combination has a flatter bandwidth range than the single-material au, and the range of loss can be controlled to be smaller. The bottom electrode is mainly made of inert metal gold, a gold-indium-gold combination mode is adopted, and indium is used as an intermediate transition layer. Because the indium has certain viscosity, the high-frequency piezoelectric transducer and the transparent acousto-optic medium can be firmly bonded together in a cold pressure welding mode, and the possibility of acoustic wave loss caused by introduction of other impurities is further reduced.
Further, the bowl-shaped curved piezoelectric single crystal 2 is mounted on a transparent acousto-optic medium 4, and the acousto-optic medium 4 is used for bearing an ultrasonic field generated by the high-frequency piezoelectric transducer. When the ultrasonic wave propagates in the acousto-optic medium 4, the ultrasonic wave is returned by the original path when encountering the obstacle after encountering the medium end face on the other side. The returned ultrasonic waves are overlapped and interfere with a transmission path of the transmitted ultrasonic waves, so that the refractive index of the transparent acousto-optic medium 4 cannot show periodic variation among density, an ultrasonic field is disturbed, an effective 'volume grating' cannot be formed, and the light splitting effect in practical application is influenced finally. In addition, the superposition of the returning ultrasound waves causes the ultrasound to diffuse in the form of heat and induces a thermal lens phenomenon of the transparent acousto-optic medium 4, again affecting the spectroscopic effect.
Therefore, in the invention, the bottom surface of the tail end of the acousto-optic medium has a wedge-shaped structure with an angle of 10-50 degrees, preferably 30 degrees; the wedge-shaped structure is used for enabling return ultrasound to deviate from an original path, and interference superposition on the original path is avoided. In addition, in order to facilitate the fixing of the acousto-optic medium, a wedge-shaped fixed block 5, such as a wedge-shaped lead block, is correspondingly arranged at the bottom of the acousto-optic medium, the wedge-shaped fixed block 5 is in reverse correspondence with the wedge-shaped structure, has the same angle, namely 10-50 degrees, preferably 30 degrees, and is attached to the oblique angle end face of the transparent acousto-optic medium 4 to form a sound absorption composite angle structure, so that the sound absorption purpose is achieved, the reflection influence of ultrasonic waves is minimized, and the acousto-optic medium can be stably placed on a desktop.
Correspondingly, the invention also discloses a preparation method of the improved acousto-optic device, which comprises the following steps:
a piezoelectric single crystal plating step S110: plating 50-200 nm of upper and lower electrodes 31 gold and 100-250 nm of indium on one side of a planar piezoelectric monocrystal with the thickness of 1-5 mm (preferably 3 mm) by a magnetron sputtering coating method in sequence; plating 50-200 nm of bottom electrode 33 gold and 100-250 nm of indium on the plane side (namely the binding surface) of the transparent acousto-optic medium 4 in sequence;
bottom electrode preparation step S120: by utilizing a metal cold pressure welding bonding method, a 100-250 nm indium surface on the piezoelectric monocrystal and a 100-250 nm indium surface of the transparent acousto-optic medium 4 are tightly attached to form a 200-500 nm middle-sole electrode 32 indium. Thus, a gold-indium-gold combined multilayer anti-reflection bottom electrode 3 (bonding layer) coating structure is formed.
Acoustic-optical device bonding step S130: continuously applying 5-30N pressure, preferably 10N pressure, to the bonded planar piezoelectric single crystal and the transparent acousto-optic medium 4 by using a pressure vice, and controlling the pressure maintaining time to be 5-60 min, preferably 45 min;
a bowl-shaped curved surface etching step S140: etching the upper surface of the piezoelectric single crystal subjected to cold pressure welding bonding of metal into a required bowl-shaped curved surface shape by using an ion etching method to form a bowl-shaped curved surface type piezoelectric single crystal 2, and plating 100-500 nm gold as a top electrode 1 by using a magnetron sputtering coating method.
The step S110 of plating the piezoelectric single crystal is specifically:
s111: sequentially cleaning the piezoelectric single crystal and the transparent acousto-optic medium by adopting absolute ethyl alcohol and deionized water;
s112: deeply cleaning the piezoelectric single crystal and the transparent acousto-optic medium by adopting a plasma pretreatment method;
s113: sequentially replacing gold target material and indium target material, plating gold and indium, setting sputtering current at 0.2A and 0.5A, and deposition rate at 0.115 nm.s -1 And 0.627 nm. s -1 。
The bottom electrode preparation step S120 specifically includes:
s121: aligning the two indium-plated surfaces by using a stereoscopic microscope in a dust-free environment;
s122: the two indium surfaces are bonded, the self viscosity is utilized, the two indium surfaces are properly pressed, the pressure is 1-5N, and the pressure is maintained for 1 min;
s123: transferring the compressed combination under a vice, continuously applying pressure of 5-30N, preferably 10N, and controlling the pressure maintaining time to be 5-60 min, preferably 45 min;
the step S140 of etching the bowl-shaped curved surface specifically includes:
s141: the electronegative gas is selected as the working gas, SF6 is generally selected as the inert gas which is colorless, odorless, nontoxic and noncombustible, has high stability, does not react with copper, silver, iron and aluminum in a dry environment below 300 ℃, does not act on quartz below 500 ℃ and is an ideal working gas for a plasma etching method.
S142: setting the air pressure to be 80mT and the power to be 6.5W, controlling the residence time of an ion etching point, and gradually shortening the residence time of etching from the center thickness to two edges according to the thickness of the curved surface type piezoelectric single crystal corresponding to the modulation bandwidth range.
S143: the thickness of the piezoelectric single crystal after plasma etching becomes thicker gradually from the center to the edge.
In conclusion, the invention has the following advantages:
(1) the high-frequency piezoelectric transducer with the bowl-shaped curved surface can concentrate the energy of an ultrasonic field to an interaction area in the acousto-optic medium more, reduce the influence of the edge amplitude of the sound field and inhibit the side lobe of the sound field, thereby improving the quality of the high-frequency ultrasonic field and further improving the modulation bandwidth of an acousto-optic device.
(2) The bottom electrode is of a gold-indium-gold combined multilayer anti-reflection coating structure, the sound wave transmission coefficient D of the bottom electrode is optimized, the Transducer Loss (TL) and the curve (TL-F) of the relative frequency F are considered in the required modulation bandwidth range, the loss in the bandwidth range is enabled to be as small as possible and flat, and the transmission loss of the sound wave is reduced.
(3) The other side of the transparent acousto-optic medium is processed into a wedge-shaped structure with an angle of 10-50 degrees, preferably 30 degrees, and the other side is bonded with the wedge-shaped structure through metal cold pressure welding indium, and then a wedge-shaped lead block with the same reverse angle is tightly attached to the wedge-shaped structure, so that the returned ultrasonic wave deviates from the original path, and the superposition interference to the original path is avoided.
(4) The length and width of the bowl-shaped curved surface type piezoelectric single crystal wafer are designed according to the maximum Bragg efficiency and the optimal utilization design of sound energy and light energy, and the sound and light divergence angle is controlled and adjusted so as to improve the utilization rate of the acousto-optic interaction.
While the invention has been described in further detail with reference to specific preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (9)
1. An improved acousto-optic device comprising:
comprises a high-frequency piezoelectric transducer and an acousto-optic medium,
the high-frequency piezoelectric transducer comprises a top electrode, a piezoelectric monocrystal and a bottom electrode;
the piezoelectric single crystal is designed according to the bandwidth range of a required modulation sound field, and the thickness of the piezoelectric single crystal is gradually increased from the center to the edge;
the top electrode is plated on the bowl-shaped curved surface side of the piezoelectric single crystal and is made of gold with the thickness of 100-500 nm;
the bottom electrode is plated on the plane side of the piezoelectric single crystal and comprises an upper bottom electrode, a middle bottom electrode and a lower bottom electrode, and the gold-indium-gold combined multilayer antireflection film structure with the total plating thickness of 300-900 nm is formed;
the high-frequency piezoelectric transducer is bowl-shaped, the curved surface of the high-frequency piezoelectric transducer faces upwards and is tightly attached to a transparent acousto-optic medium, and the acousto-optic medium is used for bearing an ultrasonic field generated by the high-frequency piezoelectric transducer.
2. The acousto-optic device of claim 1,
for the thickness d of the piezoelectric single crystal, the formula is used
Calculating to obtain the data, wherein v is the sound velocity of the piezoelectric single crystal, f is the required ultrasonic center frequency, and the data is brought into a modulation bandwidth range of f 1-f 2, wherein f1 is low frequency, f2 is high frequency, the thickness of the piezoelectric single crystal corresponding to f1 is d1, the thickness of the piezoelectric single crystal corresponding to f2 is d2, in the frequency interval, the thickness of the piezoelectric single crystal corresponding to each frequency is decomposed and refined point by point, the thickness of d2 is used as the center of the piezoelectric single crystal, and the thickness of d1 is used as the edge of the piezoelectric single crystalThe edge is gradually extended to form a piezoelectric single crystal having a bowl-shaped curved surface in the thickness direction.
3. The acousto-optic device of claim 2,
the thickness of the gold-indium-gold combined multilayer antireflection film structure is 50-200 nm of gold for the upper bottom electrode, 200-500 nm of indium for the middle bottom electrode and 50-200 nm of gold for the lower bottom electrode.
4. The acousto-optic device of claim 2,
the bottom surface of the tail end of the acousto-optic medium is provided with a wedge-shaped structure with an angle of 10-50 degrees, the bottom of the acousto-optic medium is correspondingly provided with a wedge-shaped fixed block, the wedge-shaped fixed block and the wedge-shaped structure are in opposite correspondence, and the angles are equal.
5. The acousto-optic device according to claim 4,
the angle between the wedge-shaped structure and the wedge-shaped fixing block is 30 degrees.
6. The acousto-optic device of claim 2,
when the acousto-optic medium is quartz and the modulation bandwidth is 100 MHz-300 MHz, the thickness of the piezoelectric single crystal corresponding to 100MHz is 36.5um, the thickness of the piezoelectric single crystal corresponding to 300MHz is 12.17um, the thickness of the piezoelectric single crystal corresponding to each frequency is decomposed and refined point by point in the frequency interval, so that a group of data from 12.17um to 36.5um is obtained, the central thickness of the piezoelectric single crystal is set to be 12.17um, and the thickness is gradually increased to 36.5um from two sides, so that a group of bowl-shaped curved piezoelectric single crystal thickness curves is obtained.
7. The acousto-optic device of claim 2,
for the length L of the piezoelectric single crystal, according to
Calculating to obtain the length L of the piezoelectric single crystal, wherein omega is the beam waist diameter of a Gaussian beam focused in an acousto-optic medium, the wavelength of the Gaussian beam is, and Lambda is the acoustic wavelength of the ultrasonic central working frequency;
for the width H of the piezoelectric single crystal, on the premise of selecting the proper length L of the piezoelectric single crystal, according to the formula of the Bragg diffraction efficiency of the acousto-optic device
Calculating the width H of the piezoelectric single crystal, wherein M 2 The material is acousto-optic high quality and is a quality factor for representing the characteristics of acousto-optic materials, and Ps is acoustic power.
8. A method of manufacturing an acousto-optic device according to any one of claims 1-7 including the steps of:
a piezoelectric single crystal plating step S110: plating 50-200 nm of upper bottom electrode gold and 100-250 nm of indium on one side of a planar piezoelectric single crystal with the thickness of 1-5 mm by using a magnetron sputtering coating method; plating 50-200 nm of lower bottom electrode gold and 100-250 nm of indium on the plane side of the transparent acousto-optic medium, namely the binding surface; bottom electrode preparation step S120: tightly attaching a 100-250 nm indium surface on the piezoelectric monocrystal and a 100-250 nm indium surface of the transparent acousto-optic medium by using a metal cold-pressure welding bonding method to form 200-500 nm middle bottom electrode indium and form a gold-indium-gold combined multilayer anti-reflection bottom electrode coating structure;
acoustooptic device attaching step S130: continuously applying 5-30N of pressure to the laminated planar piezoelectric single crystal and the transparent acousto-optic medium by using a pressure vice, and controlling the pressure maintaining time to be 5-60 min;
a bowl-shaped curved surface etching step S140: etching the upper surface of the piezoelectric single crystal subjected to cold welding bonding of the metal into a required bowl-shaped curved surface shape by using an ion etching method to form the piezoelectric single crystal of the bowl-shaped curved surface shape, and plating 100-500 nm of gold as a top electrode by using a magnetron sputtering coating method.
9. The method for manufacturing an acousto-optic device according to claim 8,
the step S110 of plating the piezoelectric single crystal is specifically:
s111: sequentially cleaning the piezoelectric single crystal and the transparent acousto-optic medium by adopting absolute ethyl alcohol and deionized water;
s112: deeply cleaning the piezoelectric single crystal and the transparent acousto-optic medium by adopting a plasma pretreatment method;
s113: sequentially replacing a gold target material and an indium target material, plating gold and indium, setting sputtering currents to be 0.2A and 0.5A, and setting deposition speeds to be 0.115 nm.s-1 and 0.627 nm.s-1; and/or the presence of a gas in the gas,
the bottom electrode preparing step S120 specifically includes:
s121: aligning the two indium-plated surfaces by using a stereoscopic microscope in a dust-free environment;
s122: the two indium surfaces are bonded, the self viscosity is utilized, the two indium surfaces are properly pressed, the pressure is 1-5N, and the pressure is maintained for 1 min;
s123: transferring the compressed assembly to the position below a vice, continuously applying pressure of 5-30N, and controlling the pressure maintaining time to be 5-60 min; and/or the presence of a gas in the gas,
the step S140 of etching the bowl-shaped curved surface specifically includes:
s141: selecting electronegative gas as working gas;
s142: setting air pressure of 80mT and power of 6.5W, controlling the residence time of an ion etching point, and gradually shortening the residence time of etching from the center thickness to two edges according to the thickness of the curved surface type piezoelectric single crystal corresponding to the modulation bandwidth range;
s143: the thickness of the piezoelectric single crystal after plasma etching becomes thicker gradually from the center to the edge.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210788296.2A CN115061293A (en) | 2022-07-06 | 2022-07-06 | Improved acousto-optic device and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210788296.2A CN115061293A (en) | 2022-07-06 | 2022-07-06 | Improved acousto-optic device and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115061293A true CN115061293A (en) | 2022-09-16 |
Family
ID=83203678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210788296.2A Pending CN115061293A (en) | 2022-07-06 | 2022-07-06 | Improved acousto-optic device and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115061293A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106896535A (en) * | 2017-05-10 | 2017-06-27 | 中国电子科技集团公司第二十六研究所 | For the high-diffraction efficiency transducer of focus on light beam acoustooptic diffraction |
-
2022
- 2022-07-06 CN CN202210788296.2A patent/CN115061293A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106896535A (en) * | 2017-05-10 | 2017-06-27 | 中国电子科技集团公司第二十六研究所 | For the high-diffraction efficiency transducer of focus on light beam acoustooptic diffraction |
| CN106896535B (en) * | 2017-05-10 | 2023-05-30 | 中国电子科技集团公司第二十六研究所 | High diffraction efficiency transducer for focused beam acousto-optic diffraction |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2021044835A (en) | Plate wave devices with wave confinement structures and fabrication methods | |
| CN115061293A (en) | Improved acousto-optic device and preparation method thereof | |
| WO2006114930A1 (en) | Boundary acoustic wave device | |
| KR20200014760A (en) | Method of manufacturing bonded substrate, surface acoustic wave element, surface acoustic wave element device, and bonded substrate | |
| JP2018007239A (en) | Acoustic wave device | |
| JPH0736031B2 (en) | Surface acoustic wave device used as a spectrum analyzer | |
| JP2003037467A (en) | Surface acoustic wave device | |
| JPH0451007B2 (en) | ||
| JPS58119219A (en) | Surface acoustic wave device | |
| JP2004236285A (en) | Surface wave device | |
| JPH08286160A (en) | Acoustooptic filter | |
| CN116233709A (en) | High-performance acoustic device based on longitudinal acoustic surface wave | |
| Antonov | The Underlying Technology of a Broadband Highly Efficient Acousto-Optic Cell (Deflector) on the Basis of a Paratellurite Crystal | |
| CN114236884A (en) | Lithium niobate-based high-speed high-threshold acousto-optic modulator | |
| US4403202A (en) | Surface acoustic wave device and method for producing the same | |
| CN117724278A (en) | Phased array acousto-optic deflector using KYW crystal | |
| CN219087112U (en) | High-performance acoustic device based on longitudinal acoustic surface wave | |
| CN1173210C (en) | Scoustoelectric light modulator of optical fiber for body wave | |
| JP2004072204A (en) | High frequency elastic wave element using aluminum nitride piezoelectric thin film | |
| CN221039683U (en) | High-power acousto-optic modulator | |
| JPH0212135A (en) | Second harmonic wave generating element | |
| JP2571405B2 (en) | Traveling waveform SAW light modulator | |
| JPH09219632A (en) | Surface acoustic wave element | |
| JPH04253412A (en) | Surface acoustic wave device | |
| JPH01164920A (en) | Acousto-optical element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |