CN115060401A - High-sensitivity pressure detection device based on elastic material - Google Patents
High-sensitivity pressure detection device based on elastic material Download PDFInfo
- Publication number
- CN115060401A CN115060401A CN202210502271.1A CN202210502271A CN115060401A CN 115060401 A CN115060401 A CN 115060401A CN 202210502271 A CN202210502271 A CN 202210502271A CN 115060401 A CN115060401 A CN 115060401A
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- China
- Prior art keywords
- transition metal
- elastic material
- metal chalcogenide
- dimensional transition
- chalcogenide layer
- Prior art date
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- 239000013013 elastic material Substances 0.000 title claims abstract description 59
- 238000001514 detection method Methods 0.000 title claims abstract description 27
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 69
- -1 transition metal chalcogenide Chemical class 0.000 claims abstract description 69
- 239000002245 particle Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 15
- 239000011810 insulating material Substances 0.000 claims description 10
- 230000035945 sensitivity Effects 0.000 claims description 8
- SDDGNMXIOGQCCH-UHFFFAOYSA-N 3-fluoro-n,n-dimethylaniline Chemical compound CN(C)C1=CC=CC(F)=C1 SDDGNMXIOGQCCH-UHFFFAOYSA-N 0.000 claims description 3
- HITXEXPSQXNMAN-UHFFFAOYSA-N bis(tellanylidene)molybdenum Chemical compound [Te]=[Mo]=[Te] HITXEXPSQXNMAN-UHFFFAOYSA-N 0.000 claims description 3
- HPQRSQFZILKRDH-UHFFFAOYSA-M chloro(trimethyl)plumbane Chemical compound C[Pb](C)(C)Cl HPQRSQFZILKRDH-UHFFFAOYSA-M 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- MHWZQNGIEIYAQJ-UHFFFAOYSA-N molybdenum diselenide Chemical compound [Se]=[Mo]=[Se] MHWZQNGIEIYAQJ-UHFFFAOYSA-N 0.000 claims description 3
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000012858 resilient material Substances 0.000 claims description 2
- 239000010409 thin film Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000013307 optical fiber Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/24—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
- G01L1/242—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet the material being an optical fibre
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention relates to the field of pressure detection, and particularly provides a high-sensitivity pressure detection device based on an elastic material. When the pressure detecting device is applied, the pressure to be detected acts on the stress flat plate, the change of the conductive characteristic of the two-dimensional transition metal chalcogenide layer is measured through the first electrode and the second electrode, and the pressure to be detected is detected. The invention can realize high-sensitivity pressure detection.
Description
Technical Field
The invention relates to the field of pressure detection, in particular to a high-sensitivity pressure detection device based on an elastic material.
Background
A pressure sensing device is a device or apparatus that senses a pressure signal and converts the pressure signal into a usable electrical signal for output according to a certain rule. The pressure sensor is generally composed of a pressure sensitive element and a signal processing unit. The pressure detection device is one of the devices commonly used in industry and agriculture, and is widely used in various fields of automatic control, relating to various industries of industry and agriculture.
The common pressure detection devices include resistance-type pressure sensing devices, ceramic pressure sensing devices, diffused silicon pressure sensing devices, sapphire pressure sensing devices, piezoelectric pressure sensing devices, and optical pressure sensing devices. The optical pressure sensing device has high pressure detection sensitivity. For example, patent CN111473896A discloses an optical fiber pressure sensor based on a flexible silicon diaphragm, which includes a tube, a flexible silicon diaphragm, and an optical fiber, wherein the optical fiber is disposed in the tube and close to the silicon film, and the film is attached to the optical path formed by the input optical fiber, such as the front end, the inner side, or the lateral surface of the tube. An ultrathin silicon diaphragm is prepared by using silica gel, and a resonant cavity is formed between the diaphragm and an optical fiber. When the external pressure is changed, the film is deformed, so that the resonant wavelength of the resonant cavity is changed. Although pressure sensors based on optical resonators have a high sensitivity, the overall device is costly due to the need for a continuum light source and spectroscopic analysis means for its application.
The resistance type pressure detection device has the advantages of simple structure, low cost and wide measurement range. However, the conventional resistance type pressure detecting apparatus has a low detection sensitivity to a minute pressure.
Disclosure of Invention
In order to solve the problems, the invention provides a high-sensitivity pressure detection device based on an elastic material, which comprises a substrate, a two-dimensional transition metal chalcogenide layer, a stress part, a first electrode and a second electrode, wherein the two-dimensional transition metal chalcogenide layer is arranged on the substrate, the stress part is arranged in the middle of the two-dimensional transition metal chalcogenide layer and comprises a stress flat plate and an elastic material part, the stress flat plate is plate-shaped, the elastic material part is spherical crown-shaped, the bottom surface of the elastic material part is fixedly connected with the stress flat plate, the top of the elastic material part is arranged on the two-dimensional transition metal chalcogenide layer, and the first electrode and the second electrode are respectively arranged on two sides of the stress part on the two-dimensional transition metal chalcogenide layer. The pressure to be measured acts on the stress flat plate, the internal stress of the two-dimensional transition metal chalcogenide layer is changed through the elastic material portion, the contact area of the elastic material portion and the two-dimensional transition metal chalcogenide layer is changed, and therefore the conductive characteristic of the two-dimensional transition metal chalcogenide layer is changed.
Further, the material of the elastic material portion is an insulating material.
Still further, particles are included, the particles being disposed on the arcuate surface of the resilient material portion.
Further, the material of the particles is a piezoelectric material.
Further, near the top of the elastic material portion, the size of the particles is small; the size of the particles is large away from the top of the elastomeric portion.
Further, the substrate is an insulating material.
Furthermore, the material of the force-bearing flat plate is an insulating material.
Further, the material of the two-dimensional transition metal chalcogenide layer is molybdenum sulfide, molybdenum telluride, molybdenum selenide, tungsten sulfide, tungsten telluride, or tungsten selenide.
Further, the material of the first electrode and the second electrode is gold or silver.
The invention has the beneficial effects that: the invention provides a high-sensitivity pressure detection device based on an elastic material, which comprises a substrate, a two-dimensional transition metal chalcogenide layer, a stress part, a first electrode and a second electrode, wherein the two-dimensional transition metal chalcogenide layer is arranged on the substrate, the stress part is arranged in the middle of the two-dimensional transition metal chalcogenide layer and comprises a stress flat plate and an elastic material part, the stress flat plate is plate-shaped, the elastic material part is spherical crown-shaped, the bottom surface of the elastic material part is fixedly connected with the stress flat plate, the top of the elastic material part is arranged on the two-dimensional transition metal chalcogenide layer, and the first electrode and the second electrode are respectively arranged on two sides of the stress part on the two-dimensional transition metal chalcogenide layer. When the pressure detection device is applied, pressure to be detected acts on the stress flat plate, acts on the two-dimensional transition metal chalcogenide layer through the elastic material part, and presses the two-dimensional transition metal chalcogenide layer, so that the stress in the two-dimensional transition metal chalcogenide layer and the interface between the two-dimensional transition metal chalcogenide layer and the elastic material part are changed, the conductive characteristic of the two-dimensional transition metal chalcogenide layer is changed, the change of the conductive characteristic of the two-dimensional transition metal chalcogenide layer is measured through the first electrode and the second electrode, and the pressure detection to be detected is realized. In the present invention, the elastic material portion is applied to press the two-dimensional transition metal chalcogenide layer, not only the stress in the two-dimensional transition metal chalcogenide layer is changed, but also the area of the interface between the two-dimensional transition metal chalcogenide layer and the elastic material layer is changed, so that the conductive characteristics of the two-dimensional transition metal chalcogenide layer can be more changed, and therefore, the present invention can realize a highly sensitive pressure detection.
The present invention will be described in further detail below with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic view of a highly sensitive pressure detecting device based on an elastic material.
Fig. 2 is a schematic view of yet another high-sensitivity pressure detecting device based on an elastic material.
In the figure: 1. a substrate; 2. a two-dimensional transition metal chalcogenide layer; 3. a force receiving portion; 4. a first electrode; 5. a second electrode; 6. particles; 31. a stress plate; 32. an elastic material portion.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, and the embodiments will be described by way of explanation with reference to the drawings.
Example 1
The invention provides a high-sensitivity pressure detection device based on an elastic material. As shown in fig. 1, the elastic material-based high-sensitivity pressure detection device comprises a substrate 1, a two-dimensional transition metal chalcogenide layer 2, a force-receiving portion 3, a first electrode 4 and a second electrode 5. The two-dimensional transition metal chalcogenide layer 2 is disposed on the substrate 1. The substrate 1 is an insulating material. The material of the substrate 1 may be silicon dioxide. The material of the two-dimensional transition metal chalcogenide layer 2 is molybdenum sulfide, molybdenum telluride, molybdenum selenide, tungsten sulfide, tungsten telluride, or tungsten selenide. The force receiving portion 3 is disposed in the middle on the two-dimensional transition metal chalcogenide layer 2. The force receiving part 3 comprises a force receiving flat plate 31 and an elastic material part 32, wherein the force receiving flat plate 31 is plate-shaped, the elastic material part 32 is spherical cap-shaped, and the bottom surface of the elastic material part 32 is fixedly connected with the force receiving flat plate 31. The material of the force-bearing flat plate 31 is an insulating material. The material of the elastic material portion 32 is an insulating material. As shown in fig. 1, the top of the elastic material portion 32 is placed on the two-dimensional transition metal chalcogenide layer 2, and the pressure to be measured acting on the force-receiving flat plate 31 changes the contact area of the elastic material portion 32 and the two-dimensional transition metal chalcogenide layer 2. The first electrode 4 and the second electrode 5 are respectively disposed on both sides of the force-receiving portion 3 on the two-dimensional transition metal chalcogenide layer 2. The material of the first electrode 4 and the second electrode 5 is gold or silver or platinum.
During application, the pressure to be measured acts on the stress plate 31, acts on the two-dimensional transition metal chalcogenide layer 2 through the elastic material portion 32, and presses the two-dimensional transition metal chalcogenide layer 2, so that the stress in the two-dimensional transition metal chalcogenide layer 2 and the interface between the two-dimensional transition metal chalcogenide layer and the elastic material portion 32 are changed, the conductive characteristic of the two-dimensional transition metal chalcogenide layer 2 is changed, the change of the conductive characteristic of the two-dimensional transition metal chalcogenide layer 2 is measured through the first electrode 4 and the second electrode 5, and the pressure to be measured is detected. In the present invention, the elastic material portion 32 is applied to press the two-dimensional transition metal chalcogenide layer 2, not only the stress in the two-dimensional transition metal chalcogenide layer 2 is changed, but also the area of the interface between the two-dimensional transition metal chalcogenide layer 2 and the elastic material layer 32 is changed, so that the conductive characteristics of the two-dimensional transition metal chalcogenide layer 2 can be more changed, and therefore, the present invention can realize a highly sensitive pressure detection.
Example 2
On the basis of embodiment 1, as shown in fig. 2, the elastic material portion 32 further includes particles 6, and the particles 6 are disposed on the arc-shaped surface of the elastic material portion 32. Thus, under the pressure to be measured, the arc-shaped surface of the elastic material layer 32 is deformed, and these particles 6 press the two-dimensional transition metal chalcogenide layer 2, and local deformation and stress change are generated in the vicinity of the particles 6, so that the conductive characteristic of the entire two-dimensional transition metal chalcogenide layer 2 is more changed, and the sensitivity of pressure detection is further improved.
Further, the material of the particles 6 is a piezoelectric material. Thus, the electric charge distribution is generated in the particles 6 by the pressure, which is equivalent to changing the gate voltage of the two-dimensional transition metal chalcogenide layer 2, thereby more changing the conductive characteristics of the entire two-dimensional transition metal chalcogenide layer 2, and further improving the sensitivity of pressure detection.
Further, near the top of the elastic material portion 32, the size of the particles 6 is small; the size of the particles 6 is large away from the top of the elastomeric portion 32. In this way, under the same pressure, more particles 6 come close to or contact the two-dimensional transition metal chalcogenide layer 2, thereby more changing the conductive characteristics of the two-dimensional transition metal chalcogenide layer 2, and achieving more sensitive pressure detection.
Example 3
In addition to embodiment 1, the present invention further includes a two-dimensional transition metal chalcogenide film attached to the arc-shaped surface of the elastic material portion 32. That is, the spherical cap surface of the elastic material portion 32 is coated with the two-dimensional transition metal chalcogenide thin film. Thus, the area of the interface between the two-dimensional transition metal chalcogenide layer 2 and the two-dimensional transition metal chalcogenide thin film and the acting force between the interfaces are changed by the pressure to be detected, so that the conductive characteristic of the two-dimensional transition metal chalcogenide layer 2 is changed more, and the pressure detection with higher sensitivity is realized. In this embodiment, the two-dimensional transition metal chalcogenide thin film is directly provided outside the elastic material portion 32, and the preparation is simple.
Further, the material of the substrate 1 is an elastic insulating material. For example, the material of the base 1 is rubber. Because the substrate 1 has elasticity, under the action of the pressure to be measured, the contact area between the two-dimensional transition metal chalcogenide thin film and the two-dimensional transition metal chalcogenide layer 2 is changed more, namely, a larger area of the two-dimensional transition metal chalcogenide thin film interface between the two-dimensional transition metal chalcogenide layer 2 and the two-dimensional transition metal chalcogenide thin film is generated, the conductive characteristic of the two-dimensional transition metal chalcogenide layer 2 is changed more, and therefore, the micro pressure detection with higher sensitivity is realized.
In summary, in the present invention, the pressure to be measured changes not only the stress in the two-dimensional transition metal chalcogenide layer 2 but also the interface of the elastic material portion 32 and the two-dimensional transition metal chalcogenide layer 2, so the present invention can realize high-sensitivity minute pressure detection.
While several embodiments of the present invention have been shown and described, those skilled in the art will recognize that: changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims.
Claims (9)
1. The high-sensitivity pressure detection device based on the elastic material is characterized by comprising a substrate, a two-dimensional transition metal chalcogenide layer, a stress part, a first electrode and a second electrode, wherein the two-dimensional transition metal chalcogenide layer is arranged on the substrate, the stress part is arranged in the middle of the two-dimensional transition metal chalcogenide layer and comprises a stress flat plate and an elastic material part, the stress flat plate is plate-shaped, the elastic material part is spherical crown-shaped, the bottom surface of the elastic material part is fixedly connected with the stress flat plate, the top of the elastic material part is arranged on the two-dimensional transition metal chalcogenide layer, and the first electrode and the second electrode are respectively arranged on two sides of the stress part on the two-dimensional transition metal chalcogenide layer.
2. The elastic-material-based high-sensitivity pressure detecting device according to claim 1, wherein: the elastic material part is made of an insulating material.
3. The elastic-material-based high-sensitivity pressure detecting device according to claim 2, wherein: also included are particles disposed on the arcuate surface of the resilient material portion.
4. A highly sensitive pressure detecting device based on elastic material according to claim 3, characterized in that: the material of the particles is a piezoelectric material.
5. The elastic-material-based high-sensitivity pressure detecting device according to claim 4, wherein: the size of the particles is small near the top of the elastomeric section; the particles are large in size away from the top of the elastomeric section.
6. The highly sensitive pressure detecting device based on elastic material as claimed in any of claims 1-6, characterized in that: the substrate is made of an insulating material.
7. The elastic material-based high sensitivity pressure detecting device of claim 6, wherein: the stress flat plate is made of an insulating material.
8. The elastic-material-based high-sensitivity pressure detecting device according to claim 7, wherein: the two-dimensional transition metal chalcogenide layer is made of molybdenum sulfide, molybdenum telluride, molybdenum selenide, tungsten sulfide, tungsten telluride and tungsten selenide.
9. The highly sensitive pressure detecting device based on elastic material according to any of claims 1 to 8, characterized in that: the first electrode and the second electrode are made of gold or silver.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210502271.1A CN115060401A (en) | 2022-05-10 | 2022-05-10 | High-sensitivity pressure detection device based on elastic material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210502271.1A CN115060401A (en) | 2022-05-10 | 2022-05-10 | High-sensitivity pressure detection device based on elastic material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115060401A true CN115060401A (en) | 2022-09-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210502271.1A Pending CN115060401A (en) | 2022-05-10 | 2022-05-10 | High-sensitivity pressure detection device based on elastic material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115060401A (en) |
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2022
- 2022-05-10 CN CN202210502271.1A patent/CN115060401A/en active Pending
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