CN211824551U - Integrated sensor and wearable device - Google Patents
Integrated sensor and wearable device Download PDFInfo
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- CN211824551U CN211824551U CN202020659994.9U CN202020659994U CN211824551U CN 211824551 U CN211824551 U CN 211824551U CN 202020659994 U CN202020659994 U CN 202020659994U CN 211824551 U CN211824551 U CN 211824551U
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- air pressure
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Abstract
The utility model discloses an integrated sensor and wearable equipment, integrated sensor include first substrate, first sensor, second sensor and lid, and first sensor is located on the first substrate, offers the through-hole that shows first substrate on the first sensor, and the second sensor is located on the first substrate in the through-hole. The cover body covers the side surface of the first sensor, which faces away from the first substrate, and the position, corresponding to the through hole, of the cover body is provided with the vent hole.
Description
Technical Field
The utility model relates to a technical field of sensor, in particular to integrated sensor and wearable equipment.
Background
With the development of industrial digitization and intelligence, the sensor is widely applied to the fields of wearable equipment, smart homes, smart transportation, industrial manufacturing and the like. The sensors are currently developing towards the trends of intellectualization, integration and miniaturization.
The air pressure, the temperature and the humidity are three physical quantities closely related to the daily life of people, wherein the air pressure data can be used for detecting the height change in the vertical direction to carry out motion monitoring, indoor navigation and auxiliary weather forecast; the temperature data may reflect the temperature state of the environment or the interior of the terminal; humidity data can be used to detect ambient humidity, and the respiratory burden can be increased to humidity undersize, and the breed of mould can be increased to humidity too big. In the prior art, sensors are generally selected according to needs, and when a specific detection function is needed, corresponding sensors are selected, but when the detection function needs are increased, the number of the sensors is increased, the number of the sensors not only occupies a larger area of a circuit board, so that the size of electronic equipment cannot be further reduced, the miniaturization of the electronic equipment is hindered, and the mounting process is complicated.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing an integrated sensor aims at improving the integrated level of sensor.
In order to achieve the above object, the present invention provides an integrated sensor, the integrated sensor includes:
a first substrate;
the sensor comprises a first sensor and a second sensor, wherein the first sensor is arranged on the first substrate, a through hole exposing the first substrate is formed in the first sensor, and the second sensor is arranged on the first substrate in the through hole;
the cover body covers the side surface, opposite to the first substrate, of the first sensor;
and the cover body is provided with a vent hole corresponding to the through hole.
Optionally, the first sensor is an air pressure sensor; and/or the second sensor is a humidity sensor.
Optionally, the integrated sensor further comprises a temperature sensor disposed on the first substrate.
Optionally, a first wafer bonding layer is formed between the first sensor and the first substrate through bonding.
Optionally, the cover body is a silicon cover, and a second wafer bonding layer is formed between the silicon cover and the first sensor through bonding.
Optionally, the air pressure sensor comprises:
the main body is arranged on the first substrate, and an air pressure cavity is arranged on one side of the main body, which is back to the first substrate;
and the air pressure sensing film is arranged on the main body and covers the air pressure cavity, and a gap communicated with the space where the through hole and the air pressure sensing film are positioned is formed between the main body and the silicon cover so that external air pressure acts on the air pressure sensing film through the through hole.
Optionally, the humidity sensor comprises: the interdigital electrode is arranged on the first substrate, a humidity sensitive material is arranged around the interdigital electrode, and the humidity sensitive material absorbs water molecules in the environment through the vent holes.
Optionally, the moisture sensitive material is a polyimide.
Optionally, an integrated circuit is further disposed on the first substrate, and the integrated circuit is electrically connected to the air pressure sensor, the humidity sensor, and the temperature sensor, respectively;
and the integrated circuit is used for respectively processing output signals of the air pressure sensor, the humidity sensor and the temperature sensor so as to obtain a real-time air pressure value, a real-time temperature value and a real-time humidity value.
Optionally, a wheatstone resistor bridge is disposed on the air pressure sensing film, the wheatstone resistor bridge has a first output end and a second output end, the first output end of the wheatstone resistor bridge is connected to the first detection end of the integrated circuit, and the second output end of the wheatstone resistor bridge is connected to the second detection end of the integrated circuit.
Optionally, the wheatstone resistance bridge comprises four resistors, namely a first resistor, a second resistor, a third resistor and a fourth resistor, and the piezoresistive coefficients of adjacent resistors have opposite signs.
Optionally, the atmospheric pressure chamber is formed by wet etching.
In order to achieve the above object, the present invention further provides a wearable device, including the above integrated sensor.
The technical scheme of the utility model integrated sensor, including first substrate, baroceptor, humidity transducer and silicon lid, wherein, through locating the baroceptor on the first substrate, set up the through-hole that shows first substrate on the baroceptor, humidity transducer locates on the first substrate in the through-hole. The silicon cover covers the side surface of the air pressure sensor, which faces away from the first substrate. The position that the silicon lid corresponds the through-hole is provided with the air vent, make integrated sensor have the function that atmospheric pressure detected, temperature detection and humidity detected through above-mentioned scheme, improved the integrated level, further, still be provided with the through-hole for integrated sensor can detect temperature and atmospheric pressure simultaneously through the through-hole, has simplified integrated sensor's structure, in addition, is provided with the air vent and can also improve the intensity of silicon lid under the condition that does not hinder detection performance.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of the integrated sensor of the present invention;
FIG. 2 is a top view of the integrated sensor humidity sensor and temperature sensor of the present invention;
fig. 3 is a top view of the integrated sensor barometric sensor of the present invention;
FIG. 4 is a side view of the integrated sensor humidity sensor of the present invention;
FIG. 5 is a schematic circuit diagram of a Wheatstone resistor bridge of the integrated sensor of the present invention;
fig. 6 is a schematic circuit diagram of the integrated sensor temperature sensor of the present invention;
fig. 7 is a schematic diagram of the module of the intelligent power module of the present invention.
The objects, features and advantages of the present invention will be further described with reference to the accompanying drawings.
Detailed Description
In the following, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the drawings in the embodiments of the present invention, and if there is a description related to "first", "second", etc. in the embodiments of the present invention, the description of "first", "second", etc. is only used for descriptive purposes and is not to be interpreted as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature.
The utility model provides an integrated sensor aims at improving integrated sensor's integrated level.
In an embodiment, as shown in fig. 1, the integrated sensor includes a first substrate 80, a first sensor and a second sensor, and a cover, for convenience of description, the first sensor is exemplified by an air pressure sensor 20, the second sensor is exemplified by a humidity sensor 10, and the cover is exemplified by a silicon cover 30, wherein the air pressure sensor 20 is disposed on the first substrate 80, so that the integrated sensor has functions of air pressure detection and temperature detection, in addition, a through hole 203 exposing the first substrate 80 is formed on the air pressure sensor 20, and the humidity sensor 10 is disposed on the first substrate 80 in the through hole 203. Therefore, the structure of the humidity sensor 10 can be arranged at the position of the structure of the air pressure sensor 20 on the first substrate 80, and the humidity sensor 10 is not required to be arranged in an additionally divided area, so that the volume of the integrated sensor is reduced, in addition, the silicon cover 30 covering the side surface of the air pressure sensor 20, which is back to the first substrate 80, is also arranged, as the silicon cover 30 covers the air pressure sensor 20, namely the through hole 203, the humidity sensor 10 and the air pressure sensor 20 are packaged, and the detection result is prevented from being changed due to the influence of the action of an object or a human body when the air pressure sensor 20 is directly contacted with the environment during detection. Further, the silicon cover 30 is provided with a vent hole 301 at a position corresponding to the through hole 203. It is also possible to improve the strength of the silicon cap 30 without hindering the detection performance. Meanwhile, accurate induction of air pressure and humidity is guaranteed, and external foreign matters can be effectively prevented from entering the interior of the integrated sensor to cause pollution.
In one embodiment, as shown in FIG. 2, the integrated sensor further comprises a temperature sensor 60, the temperature sensor 60 being disposed on the first substrate 80.
The temperature sensor 60 and the air pressure sensor 20 are disposed on the first substrate 80 at an interval, and the temperature sensor 60 detects air pressure and humidity at different temperatures at the same time as the air pressure sensor 20 and the humidity sensor 10, so that the operating temperature of the integrated sensor can be detected.
In one embodiment, the diameter of the vent 301 is less than 2 nanometers. Not only can guarantee the accurate response of atmospheric pressure and humidity, but also can effectively avoid external foreign matter to enter into the inside pollution that causes of integrated sensor.
In an embodiment, the first wafer bonding layer 40 is formed between the air pressure sensor 20 and the first substrate 80 through bonding.
The bonding can be realized by gold-silicon eutectic bonding, silicon/glass electrostatic bonding, silicon/silicon direct bonding, glass solder sintering and the like.
In one embodiment, a second wafer bonding layer 50 is formed between the silicon cap 30 and the gas pressure sensor 20 by bonding.
The bonding can be realized by gold-silicon eutectic bonding, silicon/glass electrostatic bonding, silicon/silicon direct bonding, glass solder sintering and the like.
In one embodiment, as shown in fig. 1, the air pressure sensor 20 includes a main body and an air pressure sensing film 201, the main body is disposed on the first substrate 80, and an air pressure chamber 202 is disposed on a side of the main body opposite to the first substrate 80. The air pressure sensing film 201 is disposed on the main body and covers the air pressure cavity 202, and a gap for communicating the through hole 203 and the space where the air pressure sensing film 201 is located is formed between the main body and the silicon cover 30, so that external air pressure acts on the air pressure sensing film 201 through the through hole 203.
In order to accurately control the shape of the air pressure chamber 202, the air pressure chamber 202 is formed by wet etching (KOH, potassium hydroxide solution), the air pressure sensing film 201 is formed by bonding another silicon wafer on the substrate wafer and grinding and thinning the silicon wafer, when external air pressure acts on the air pressure sensing film 201, the air pressure sensing film 201 is deformed due to air pressure difference between the inside and the outside of the air pressure chamber 202, and stress generated by the deformation is measured to obtain an air pressure value. In addition, a gap for communicating the through hole 203 and the space where the pressure sensing film 201 is located is formed between the main body and the silicon cover 30, so that external air pressure acts on the pressure sensing film 201 through the through hole 203. At this time, the air pressure sensing film 201 is not directly disposed under the vent hole 301, that is, the air pressure sensing film 201 is not disposed in the through hole 203 of the air pressure sensor 20, so as to prevent the flow velocity of air passing through the vent hole 301 from affecting the measured air pressure, and to make the measured air pressure value more accurate.
In one embodiment, the through-hole 203 on the gas pressure sensor 20 is formed by deep reactive ion etching.
In one embodiment, as shown in fig. 1, 2 and 4, the humidity sensor 10 includes an interdigital electrode 101 disposed on the first substrate 80, a humidity sensitive material 102 disposed around the interdigital electrode 101, and the humidity sensitive material 102 absorbs water molecules in the environment through the vent 301.
The interdigital electrodes 101 are formed on the first substrate 80 through a sputtering process, then a layer of high molecular polymer material is deposited on the interdigital electrodes 101, the dielectric constant of the high molecular polymer material can be changed along with the quantity of water molecules in an absorption environment, so that the capacitance between the interdigital electrodes 101 is changed, and the quantity of the water molecules can be determined by detecting the voltage of the interdigital electrodes 101.
In one embodiment, the humidity sensitive material 102 is polyimide (polyimide-polyimide), which has a dielectric constant that changes with the absorption of water molecules in the environment, thereby changing the capacitance between the interdigitated electrodes 101.
In one embodiment, as shown in fig. 2, an integrated circuit 70 is further disposed on the first substrate 80, and the integrated circuit 70 is electrically connected to the air pressure sensor 20, the humidity sensor 10 and the temperature sensor 60, respectively.
The integrated circuit 70(ASIC) processes the output signals of the air pressure sensor 20, the humidity sensor 10 and the temperature sensor 60 respectively to obtain a real-time air pressure value, a real-time temperature value and a real-time humidity value.
As shown in fig. 7, the integrated circuit 70 includes an amplifier 701, an analog-to-digital converter 702, a data processing unit 703, a memory 704, and a digital interface 705, wherein an input terminal of the amplifier 701 is connected to an output terminal of the air pressure sensor 20, an output terminal of the humidity sensor 10, and an output terminal of the temperature sensor 60, respectively, an output terminal of the amplifier 701 is connected to an input terminal of the analog-to-digital converter 702, an output terminal of the analog-to-digital converter 702 is connected to an input terminal of the data processing unit 703, an input terminal of the memory 704 is connected to an input terminal of the data processing unit 703, and the digital interface 705 is used for connecting the data processing unit 703.
The amplifier 701 amplifies the detected analog signal, the analog-to-digital converter 702 converts the analog signal into a digital signal, the data processing unit 703 determines a corresponding air pressure value, humidity value and temperature value according to the digital signal, and the memory 704 stores the detected air pressure value, humidity value and temperature value.
Optionally, the data processing unit 703 may preset a corresponding relationship between the digital signal and the air pressure value, the humidity value, and the temperature value, so that the corresponding air pressure value, humidity value, and temperature value may be determined according to the detected digital signal. The data processing unit 703 may be implemented by using an existing processor chip, and detection may be implemented only by presetting the corresponding relationship, and the corresponding circuit principle may also be implemented by referring to the circuit principles of the air pressure sensor 20, the humidity sensor 10, and the temperature sensor 60.
Alternatively, the humidity sensor 10 may be integrated on an integrated circuit 70(ASIC) based on Post CMOS (Post CMOS device) process. The ASIC is primarily used to process humidity, temperature, and barometric pressure signals.
In one embodiment, as shown in fig. 3, a wheatstone resistor bridge is disposed on the air pressure sensing film 201, the wheatstone resistor bridge has a first output terminal and a second output terminal, the first output terminal of the wheatstone resistor bridge is connected to the first detection terminal of the integrated circuit 70, and the second output terminals of the wheatstone resistor bridge are respectively connected to the second detection terminal of the integrated circuit 70.
In one embodiment, as shown in fig. 5, the wheatstone resistor bridge includes four resistors, namely a first resistor R1, a second resistor R2, a third resistor R3 and a fourth resistor R3, wherein the piezoresistive coefficients of adjacent resistors have opposite signs.
Four resistors deposited on the pressure sensing film 201 are connected to form a wheatstone resistor bridge, namely a first resistor R1, a second resistor R2, a third resistor R3 and a fourth resistor R3. The pneumatic chamber 202 is a vacuum chamber. The four piezoresistors have equal initial resistance values (R0), VDD + and GND provide DC excitation for the bridge, and the differential output (difference between P _ out + and P _ out-) of the Wheatstone resistor bridge is 0 when no air pressure acts on the air pressure sensing diaphragm 201. When the external air pressure acts on the air pressure sensing film 201, the air pressure difference exists between the inside and the outside of the air pressure cavity 202, so that the air pressure sensing film 201 is deformed, the stress generated by the deformation acts on the first resistor R1, the second resistor R2, the third resistor R3 and the fourth resistor R3, the resistance value of the resistors is changed (delta R), and the differential output of the Wheatstone resistor bridge is not 0. To obtain the maximum output voltage, the piezoresistive coefficients of adjacent resistors are made to have opposite signs.
In one embodiment, as shown in fig. 2 and 6, the temperature detecting sensor is a thermal diode D1 disposed on the first substrate 80. The anode of the thermal diode Is connected with the direct-current power source Is, and the cathode of the thermal diode Is grounded.
The integrated sensor realizes temperature measurement by using different bias voltages V-diode at two ends of the diode under different temperatures of the diode.
In order to achieve the above object, the present invention further provides a wearable device, including the above integrated sensor.
It is worth noting, because the utility model discloses wearable equipment has contained above-mentioned integrated sensor's all embodiments, consequently the utility model discloses wearable equipment has above-mentioned integrated sensor's all beneficial effects, and it is no longer repeated here.
Claims (13)
1. An integrated sensor, comprising:
a first substrate;
the sensor comprises a first sensor and a second sensor, wherein the first sensor is arranged on the first substrate, a through hole exposing the first substrate is formed in the first sensor, and the second sensor is arranged on the first substrate in the through hole;
the cover body covers the side surface, opposite to the first substrate, of the first sensor;
and the cover body is provided with a vent hole corresponding to the through hole.
2. The integrated sensor of claim 1, wherein the first sensor is an air pressure sensor; and/or the second sensor is a humidity sensor.
3. The integrated sensor of claim 1, further comprising a temperature sensor disposed on the first substrate.
4. The integrated sensor of claim 1, wherein a first wafer bonding layer is formed between the first sensor and the first substrate by bonding.
5. The integrated sensor of claim 1, wherein the cover is a silicon cover, and a second wafer bonding layer is formed between the silicon cover and the first sensor by bonding.
6. The integrated sensor of claim 2, wherein the barometric pressure sensor comprises:
the main body is arranged on the first substrate, and an air pressure cavity is arranged on one side of the main body, which is back to the first substrate;
the air pressure sensing film is arranged on the main body and covers the air pressure cavity, and a gap communicated with the space where the through hole and the air pressure sensing film are located is formed between the main body and the cover body so that external air pressure can act on the air pressure sensing film through the through hole.
7. The integrated sensor of claim 2, wherein the humidity sensor comprises: the interdigital electrode is arranged on the first substrate, a humidity sensitive material is arranged around the interdigital electrode, and the humidity sensitive material absorbs water molecules in the environment through the vent holes.
8. The integrated sensor of claim 7, wherein the moisture sensitive material is polyimide.
9. An integrated sensor as claimed in claim 3, wherein an integrated circuit is further provided on the first substrate, the integrated circuit being electrically connected to the first sensor, the second sensor and the temperature sensor, respectively;
the integrated circuit is used for respectively processing output signals of the first sensor, the second sensor and the temperature sensor so as to obtain a real-time air pressure value of the first sensor, a real-time temperature value and a real-time humidity value of the second sensor.
10. The integrated sensor of claim 6, wherein a Wheatstone resistor bridge is disposed on the air pressure sensing membrane, the Wheatstone resistor bridge having a first output terminal and a second output terminal, the first output terminal of the Wheatstone resistor bridge being connected to the first sensing terminal of the integrated circuit, the second output terminal of the Wheatstone resistor bridge being connected to the second sensing terminal of the integrated circuit.
11. The integrated sensor of claim 10, wherein the wheatstone resistor bridge comprises four resistors, a first resistor, a second resistor, a third resistor, and a fourth resistor, wherein the piezoresistive coefficients of adjacent resistors are of opposite sign.
12. The integrated sensor of claim 6, wherein the gas pressure chamber is formed by wet etching.
13. A wearable device comprising an integrated sensor according to any of claims 1-12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020659994.9U CN211824551U (en) | 2020-04-26 | 2020-04-26 | Integrated sensor and wearable device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202020659994.9U CN211824551U (en) | 2020-04-26 | 2020-04-26 | Integrated sensor and wearable device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211824551U true CN211824551U (en) | 2020-10-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202020659994.9U Expired - Fee Related CN211824551U (en) | 2020-04-26 | 2020-04-26 | Integrated sensor and wearable device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211824551U (en) |
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2020
- 2020-04-26 CN CN202020659994.9U patent/CN211824551U/en not_active Expired - Fee Related
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20201030 |
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| CF01 | Termination of patent right due to non-payment of annual fee |