CN115044971B - Wafer bearing device for vapor phase growth device and control method - Google Patents
Wafer bearing device for vapor phase growth device and control method Download PDFInfo
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- CN115044971B CN115044971B CN202210567575.6A CN202210567575A CN115044971B CN 115044971 B CN115044971 B CN 115044971B CN 202210567575 A CN202210567575 A CN 202210567575A CN 115044971 B CN115044971 B CN 115044971B
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- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000001947 vapour-phase growth Methods 0.000 title claims abstract description 27
- 238000005086 pumping Methods 0.000 claims abstract description 33
- 238000007789 sealing Methods 0.000 claims abstract description 19
- 235000012431 wafers Nutrition 0.000 claims description 71
- 239000007789 gas Substances 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 16
- 238000000605 extraction Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 8
- 239000011553 magnetic fluid Substances 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 2
- 238000004891 communication Methods 0.000 claims 1
- 230000009471 action Effects 0.000 abstract description 4
- 238000009423 ventilation Methods 0.000 description 15
- 230000001276 controlling effect Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The application discloses a wafer carrying device for a vapor phase growth device and a control method. The wafer carrying device comprises: the shell is internally provided with a supporting cylinder, a plurality of second channels extending along the axial direction of the supporting cylinder are arranged in the supporting cylinder, one side of the supporting cylinder is provided with a gas pumping ring and a tray which are sequentially stacked, the tray is internally provided with a first channel extending along the axial direction of the supporting cylinder, the other side of the supporting cylinder is provided with a rotary carrying disc, a third channel extending along the radial direction of the supporting cylinder is arranged in the supporting cylinder, the rotary carrying disc is connected with a rotating shaft of a driving part, the rotating shaft is provided with a plurality of fourth channels extending along the axial direction of the driving part, a sealing cover is arranged on the driving part far away from the shell side, and the sealing cover is provided with a first perforation which is connected to a vacuumizing device through a pipeline. The first channel, the second channel, the third channel, the fourth channel and the first perforation are communicated based on the action of the vacuumizing device, and the first channel, the second channel, the third channel, the fourth channel and the first perforation are combined to form a negative pressure channel. The wafer is reliably placed on the tray and rotates at a certain speed, so that the occurrence of flying discs is avoided, and meanwhile, the edge tilting of the wafer is avoided.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a wafer bearing device for a vapor phase growth device and a control method.
Background
In the epitaxial growth process, a wafer (sometimes referred to as a substrate) is placed on a tray, the tray or carrier is heated, and then subsequent epitaxial growth process steps are performed. In some process steps, the wafer needs to be rotated at a high speed, but during the rotation, the wafer carrier plate or the wafer is easily thrown out due to the action of centrifugal force, fragments and the like occur, and the production is affected. For example, the wafer carrier and the wafer are prone to fly-away during the rotation of the wafer carrier. The production is affected and the maintenance cost of operation is increased.
For this reason, there is a need to improve the wafer carrying device of the existing vapor phase growth device.
Disclosure of Invention
To overcome the above drawbacks, the present application aims to: the wafer bearing device for the vapor phase growth device can avoid the phenomenon that the wafer is easy to fly in the rotating process of the wafer bearing mechanism. Another aspect of the present application provides a control method of a vapor phase growth apparatus mounted with the wafer carrier, by which reliable bonding of a wafer to a tray or reliable bonding of a tray to an exhaust ring is achieved.
In order to achieve the above purpose, the application adopts the following technical scheme:
a wafer carrier for a vapor phase growth apparatus, comprising:
a housing and a driving part arranged at one side of the housing,
a supporting cylinder is arranged in the shell, a plurality of second channels extending along the axial direction of the supporting cylinder are arranged in the supporting cylinder,
one side of the supporting cylinder is provided with a gas pumping ring and a tray which are sequentially stacked, a first channel which is axially arranged along the tray is arranged in the tray,
a rotary carrying disc is arranged on one side of the supporting cylinder far away from the gas pumping ring, a third channel extending along the radial direction is arranged in the rotary carrying disc,
the rotating shaft of the driving part penetrates through the center of the bottom plate of the shell and is connected to the side, far away from the supporting cylinder, of the rotary carrying disc, a plurality of fourth channels extending along the axial direction of the rotating shaft are arranged on the rotating shaft, the side, far away from the shell, of the driving part is provided with a sealing cover, the sealing cover is provided with a first through hole, the first through hole is connected to a vacuumizing device through a pipeline, and the first through hole, the second channel, the third channel, the fourth channel and the first through hole are sequentially communicated based on the vacuumizing device to form a negative pressure channel so as to suck wafers on the tray.
Preferably, a first concave portion is disposed in a central area of the tray, a plurality of first channels are disposed in a peripheral direction of an edge of the first concave portion, and a center combination of openings of the plurality of first channels, which are close to a wafer side, is circular.
Preferably, the air extraction ring is disc-shaped, a plurality of first grooves are arranged at the edge of one side of the air extraction ring and are used for matching with the tray, fan-shaped vent holes which are axially arranged are uniformly arranged in the circumferential direction of the air extraction ring, vent grooves are arranged at one side, close to the center of a circle, of each fan-shaped vent hole, and the vent grooves are communicated with the fan-shaped vent holes.
Preferably, the fan-shaped vent hole is arranged symmetrically along the center of the vent groove.
Preferably, the number of the fan-shaped vent holes is even and is in one-to-one matching correspondence with the number of the second channels, and the air extraction ring is configured to be projected on the side of the supporting cylinder, and the fan-shaped vent holes cover the openings of the corresponding second channels.
Preferably, a protective barrel is arranged on the periphery of the supporting barrel, a second concave part is arranged on the side, far away from the gas pumping ring, of the supporting barrel, and the second concave part is used for accommodating the rotary carrying disc.
Preferably, a fifth channel is arranged in the bottom plate of the shell along the radial direction of the bottom plate, one side of the fifth channel is communicated with the central through hole, the other side of the fifth channel is communicated with a second through hole, and the second through hole is used for being connected with a gas source through a pipeline to be connected with inert gas.
Preferably, the cavity of the supporting cylinder is provided with a heating component, one side of the heating component is provided with a supporting component, and the supporting component sequentially penetrates through the rotary carrying disc, the hollow rotating shaft and the second magnetic fluid sealing device.
Preferably, a gap is provided between the outer side of the rotating shaft and the main body of the driving part.
The embodiment of the application provides a vapor phase growth device carrying the wafer carrying device, the vapor phase growth device is provided with a control module which is respectively connected with a first pressure gauge and a second pressure gauge,
the first pressure gauge is used for obtaining the pressure of the reaction cavity,
the second pressure gauge is arranged on a pipeline of the vacuumizing device and is used for obtaining the operating pressure value of the vacuumizing device,
the control module adjusts pipeline pressure of the vacuumizing device based on pressure information fed back by the first pressure and a current running mode so as to realize suction of 30-150N on the surfaces of the tray and the wafer.
Advantageous effects
By the wafer carrying device, the wafer carrying disc and the rotating mechanism do not move relatively.
Drawings
The accompanying drawings are included to provide an understanding of the technical aspects of the present disclosure, and are incorporated in and constitute a part of this specification, illustrate the technical aspects of the present disclosure and together with the embodiments of the disclosure, not to limit the technical aspects of the present disclosure. The shapes and sizes of the various components in the drawings are not to scale, and are intended to illustrate the present application only.
FIG. 1 is a schematic perspective view of a wafer carrier according to an embodiment of the present application;
FIG. 2 is a schematic view of the placement wafer of FIG. 1;
FIG. 3 is a schematic perspective view of the wafer carrier of the hidden tray of FIG. 1;
FIG. 4 is a schematic top view of FIG. 3;
FIG. 5 is a schematic cross-sectional view at C-C of FIG. 4;
FIG. 6 is a schematic cross-sectional view at D-D of FIG. 2;
FIG. 7 is a schematic diagram of the blanked wafer of FIG. 6;
FIG. 8 is a schematic view of the removable tray and the heating portion of FIG. 7;
FIG. 9 is a schematic view of the hidden pumping ring and support cylinder of FIG. 8;
FIG. 10 is a schematic view of the hidden pumping ring and rotating carrier plate of FIG. 8;
FIG. 11 is a schematic top view of an embodiment of a pumping ring;
FIG. 12 is a schematic cross-sectional view at B-B in FIG. 11;
FIG. 13 is a schematic top view of a rotating carrier plate according to an embodiment of the application;
FIG. 14 is a schematic cross-sectional view taken at A-A of FIG. 13;
fig. 15 is a schematic diagram of a control method of a wafer carrier according to an embodiment of the application.
Detailed Description
The above-described aspects are further described below in conjunction with specific embodiments. It should be understood that these examples are illustrative of the present application and are not intended to limit the scope of the present application. The implementation conditions employed in the examples may be further adjusted as in the case of the specific manufacturer, and the implementation conditions not specified are typically those in routine experiments.
The application provides a wafer bearing device for a vapor phase growth device.
The wafer carrying device comprises:
the shell is internally provided with a supporting cylinder, the end part of the supporting cylinder is provided with a gas pumping ring and a tray arranged on the gas pumping ring, the tray is provided with a first concave part, a plurality of first channels continuing along the axial direction of the tray are arranged in the first concave part, the tray is used for preventing the placement of wafers, and the placed wafers cover the openings of the first channels. A first gas flow path is arranged in the air suction ring and is communicated with the first channel;
the side of the support cylinder, which is far away from the pumping ring, is provided with a second concave part which is used for accommodating the rotary carrying disc. The rotary carrying disc is connected with the rotating shaft of the driving part. The middle part of the rotating shaft is provided with a first magnetic fluid sealing device, and the end part of the rotating shaft is provided with a second magnetic fluid sealing device. The drive part is provided with a sealing cover on the side facing away from the housing, which sealing cover is provided with a first perforation which is connected to a vacuum-pumping device, such as a vacuum pump, via a pipeline.
In this embodiment, a plurality of second channels extending along the axial direction are provided in the support body of the support cylinder. A third passage extending in the radial direction thereof is provided in the rotary carrier plate. A plurality of fourth channels continuing along the axial direction of the rotating shaft are arranged on the circumference direction of the rotating shaft. The first channel, the first gas flow path, the second channel, the third channel, the fourth channel and the first perforation are communicated, and the first channel, the first gas flow path, the second channel, the third channel, the fourth channel and the first perforation are combined to form a negative pressure channel. The negative pressure channels are combined to form a negative pressure region. The opening combination of the plurality of first channels is circular, and the projection of the opening combination on the wafer side is approximately positioned at the edge of the wafer, so that the wafer can be reliably sucked and the wafer can be prevented from tilting during epitaxial growth. The tray is reliably attached to the air extraction ring through structural optimization of the first gas flow path, so that no relative motion exists between the tray and the rotating mechanism. The wafer bearing device is configured at the bottom of the reaction cavity of the vapor phase growth device, and when (such as silicon carbide) epitaxially grows, the wafer can be safely and reliably placed on a tray of the wafer bearing device and rotated at a certain speed, so that the occurrence of a flying disc is avoided. When the vapor phase growth device operates, suction of 30-150N is realized on the surfaces of the tray and the wafer so as to suck the wafer and prevent the flying disc.
The wafer carrier apparatus of the present application is described with reference to figures 1-14,
fig. 1 is a schematic perspective view of a wafer carrier according to an embodiment of the application.
The wafer carrier apparatus 100 includes:
the housing 140 has the support cylinder 130 mounted therein, the tray 110 is disposed at an end of the support cylinder 130, a first recess (e.g., a circular recess) is disposed in a central region of the tray 110, a plurality of first passages 111 are disposed in a circumferential direction of an edge of the first recess, and the driving part 150 is disposed at a bottom of the housing 140. The first recess is for placing a wafer 200 (see fig. 2). In the present embodiment, the vent ring 112 is disposed on the side of the tray 110 opposite to the first recess, and the vent ring 112 is connected to the first passage 111.
An air suction ring 120 is disposed on the lower side of the tray 110, and the air suction ring 120 is interposed between the tray 110 and the support cylinder 130.
The structure of the pumping ring 120 is described below with reference to fig. 11 and 12.
The air extraction ring 120 is disc-shaped, a plurality of first grooves 121 are disposed at an edge of one side of the air extraction ring 120, the plurality of first grooves 121 are used for matching with the tray 110, fan-shaped ventilation holes 122 (penetrating along an axial direction of the air extraction ring 120) are uniformly disposed in a circumferential direction of the air extraction ring 120, ventilation grooves 123 are disposed at one side of the fan-shaped ventilation holes 122, which is close to a center of a circle, and the ventilation grooves 123 are communicated with the fan-shaped ventilation holes 122. In the present embodiment, the fan-shaped ventilation holes 122 are arranged symmetrically along the center of the ventilation groove 123. The side of the bottom 124 of the ventilation groove 123, which is close to the fan-shaped ventilation hole 122, is hollowed out. The first groove 121 has a circular shape. Preferably, the number of the fan-shaped ventilation holes 122 is even, and the number is between 4 and 10. The combination of the fan vent 122 and the vent slot 123 with which it communicates is T-shaped (or approximately T-shaped). After the tray 110 is combined with the air pumping ring 120, the air pumping ring 112 is connected with the fan-shaped air vent 122 or is communicated with the fan-shaped air vent 122 and part of the air vent grooves 123, and the air vent grooves 123 are communicated with the first channel 111.
The suction ring 120 is disposed on the support cylinder 130 (end of the support cylinder 130) on the side away from the first groove 121, as shown in fig. 4 in a plan view. A plurality of second passages 132 extending axially thereof are provided in a support body (also referred to as a side wall) 133 of the support cylinder 130. The number of the second channels 132 is matched with the number of the fan-shaped ventilation holes 122 one by one, and the air extraction ring 120 is configured to be projected on the side of the support cylinder 130, and the fan-shaped ventilation holes 122 cover the openings 131 of the corresponding second channels 132. The outer periphery of the support cylinder 130 is provided with a shield cylinder 180.
The support cylinder 130 is provided with a second recess (see fig. 10) on the side facing away from the suction ring 120 for accommodating a rotary carrier plate 190 (see fig. 5). The rotary carrier plate 190 is in sealing engagement with the second recess. The rotary table 190 is connected to a hollow shaft 153 (abbreviated as shaft 153) in the driving section 150. A plurality of fourth passages 154 continuing in the axial direction of the rotating shaft are provided in the circumferential direction of the rotating shaft 153. The middle part of the rotating shaft 153 is provided with a first magnetic fluid sealing device 152. The end of the rotating shaft 153 is provided with a second magnetic fluid sealing device 155. Preferably, the fourth channels 154 are uniformly provided in the circumferential direction of the rotating shaft 153. A seal cover 170 is disposed on the side of the driving part 150 away from the case 140. The sealing cover 170 is provided with a first through hole, and the first through hole is communicated with the fourth channel 154. The first perforation is connected via a pipe to a vacuum-pumping device (e.g. a vacuum pump, not shown). The first bore communicates with the fourth passage 154. In the present embodiment, the support cylinder 130 has a hollow cylindrical shape, the heating member 161 is disposed in the cavity c of the support cylinder 130, one side of the heating member 161 is provided with the support member 162, and the support member 162 sequentially passes through the rotary table 190, the hollow rotary shaft 153, and the second magnetic fluid sealing device 155. A gap d is provided between the outer side of the rotation shaft 153 and the main body 151 of the driving unit 150. In the present embodiment, the outer diameter of the supporting member 162 is smaller than the inner diameter of the rotating shaft 153.
The rotary carrier plate 190 is provided with a second groove 193 at one side edge side thereof and a third groove 192 at the opposite side to the second groove 193, and the third groove 192 is located within the outline of the second groove 193, and the third groove 192 serves as an air passage. A plurality of third passages 191 extending in the radial direction thereof are provided in the rotary carrier plate 190, and the third passages 191 are provided with one side communicating with the third grooves 192 and the other side communicating with the third grooves 192. The third groove 192 is for communicating with the fourth passage 154. In the present embodiment, the second groove 193, the third groove 192, and the fourth groove 195 are all annular. The third channel 191 serves as an internal air channel of the rotary carrier plate 190. A fourth groove 195 is provided outside the third groove 192, and the fourth groove 195 is adapted to be engaged with the fifth groove 143 on the bottom plate 141.
The bottom plate 141 of the housing 140 is provided with a second through hole a (also referred to as a vent hole a) connected to a gas source (not shown) through a pipe to access the inert gas. The bottom plate 141 has a fifth passage 142 disposed in a radial direction thereof, and one side of the fifth passage 142 communicates with the second through hole a and the other side communicates with a gap d (i.e., a gap cavity) between the outside of the rotating shaft 153 and the main body 151.
In operation of the apparatus, after the inert gas enters the fifth channel 142 through the second through hole a and flows into the gap d/gap cavity, part of the inert gas enters the cavity c through the third through hole 194 of the rotary carrier plate 190 (to protect the heating part 161 and the supporting part 162 thereof), part of the inert gas enters the space between the supporting cylinder 130 and the shielding cylinder 180 through the bottom of the rotary carrier plate 190 (through the gap between the fourth groove 195 and the fifth groove 143, through the gap between the fourth groove 195 and the fifth groove 143 for increasing the flow resistance of the gas), and then flows out from the gap between the shielding cylinder 180 and the pumping ring 120 and is pumped away by the exhaust evacuation device (the exhaust evacuation device is a conventional technology in the art, and is not described in detail). Meanwhile, the reaction gas enters the reaction cavity, so that micro-positive pressure of the ventilation part can be realized.
The vacuumizing device operates to form negative pressure on the wafer bearing device, so that the wafers are reliably attached to the tray. Specifically, the air is pumped by the action of the air pressure valve, and the flow path of the air sequentially passes through the first perforation, the second magnetic fluid sealing device 155, the fourth channel 154 of the rotating shaft 153, the rotating carrier plate 190, the second channel 132 of the supporting cylinder 130, the pumping ring 120, the first channel 111 of the tray 110 and the wafer 200. The flow paths of the plurality of air-extracted gases are combined to form a negative pressure area, so that the wafer is reliably attached to the tray. In this embodiment, a groove (which faces the opening 131 of the second channel 132) is designed at the bottom of the pumping ring 120, and by this design, a large-area negative pressure region can be formed, so that the pumping ring 120 can be ensured to be closely attached to the end of the support cylinder 130. The plurality of fan-shaped ventilation holes and the ventilation grooves with matched numbers are designed on the air pumping ring, so that the tray can be closely attached to the air pumping ring 120. A plurality of first passages 111 are provided at the edge of the tray 110 to attach the wafer to the tray.
Next, a method for controlling the above-mentioned wafer carrier, which is disposed in the reaction chamber of the vapor phase growth apparatus,
the vapor phase growth apparatus is provided with a first pressure gauge for obtaining the pressure of the reaction chamber, a second pressure gauge disposed on a pipe of a vacuum-pumping apparatus communicating with a first perforation of the sealing cap 170, the vacuum-pumping apparatus including an air pressure valve (also referred to as a pressure regulating valve) which is opened/closed based on the control of the vacuum-pumping apparatus, and the second pressure gauge for obtaining a pressure value (negative pressure value) at which the vacuum-pumping apparatus operates. The pressure of the negative pressure pipeline can be adjusted according to different requirements of the process, so that the pressure difference between the vacuum pipeline and the cavity (reaction cavity) is changed, and the acting force of the pressure difference on the surfaces of the tray and the wafer is adjusted.
According to the formula f=ps, the variation can obtain f=Δps, (Δp represents the differential pressure; S represents the area with the differential pressure portion), whereby we can control the pressure of the negative pressure line according to different processes, for example. For the general process, after the process gas enters the reaction chamber, the pressure of the reaction chamber is as follows250-300mbar, so that the negative pressure part controls the pressure to be changed between 50-200mbar, and the area of the pressure difference generating part is S=6000 mm 2 Therefore, there are:
F＝((250～300)-(50～200))mbar*6000mm 2 ＝(30～150)N
the force of 30-150N can be realized on the surfaces of the tray and the wafer by controlling the change of the negative pressure value, and the magnitude of the control force can be adjusted by a program, so that the force acting on the surfaces of the tray and the wafer is kept unchanged no matter how the pressure in the process cavity changes in the whole process.
The negative pressure control pressure is not limited to the range, and can be adjusted according to the process parameters; the area in which the pressure differential exists can also be subject to design changes.
The vapor phase growth device is respectively connected with a first pressure gauge 1 and a second pressure gauge 2, wherein the first pressure gauge 1 is used for obtaining the pressure of a reaction cavity, the second pressure gauge 2 is configured on a pipeline of a vacuumizing device and used for obtaining the pressure value of the operation of the vacuumizing device, the first switch valve 1 is used for controlling the cavity to be communicated with a negative pressure pipeline, the second switch valve 2 is used for controlling the opening and closing of the vacuum pipeline, and the control method during the operation of the vapor phase growth device comprises the following steps:
before the process starts, the first switch valve 1 is in an open state, and the second switch valve 2 is in a closed state, so that the pressure of the cavity is ensured to be the same as that of the vacuum channel; the pressure value (P1) of the first pressure gauge and the pressure value (P2) of the second pressure gauge are also fed back to an upper computer (not shown), which is a part of the control module, and the pressure in the upper computer is set as follows: p2 is less than P1; after the wafer is transferred to the wafer carrying device, preparing to start epitaxial generation (also called a film coating process), wherein the first switch valve 1 is closed, and the second switch valve 2 is opened; the pressure value between the first pressure gauge 1 and the second pressure gauge 2 is a fixed value deltap, and after the process gas is introduced into the reaction chamber (for example, the process gas is introduced into the reaction chamber based on the shower head), the value of the first pressure gauge 1 changes within a certain range. At this time, the pressure control valve can automatically adjust the pressure of the negative pressure pipeline according to the change of P1, so as to ensure the constant value of delta P and realize the suction of 30-150N on the surfaces of the tray and the wafer. After the process is finished, the switch valve 2 is closed, and then the first switch valve 1 is opened, so that the negative pressure pipeline and the cavity pressure are ensured to be the same. The wafer may be removed. The first switching valve 1 and the second switching valve 2 are respectively connected to a control module of the vapor phase growth device, and act based on instructions of the control module. Preferably, the first switching valve 1 and the second switching valve 2 may be solenoid valves. The control module is electrically connected to the pressure control valve and basically controls the action of the pressure control valve in a preset mode.
The above embodiments are provided to illustrate the technical concept and features of the present application, and are intended to enable those skilled in the art to understand the present application and implement the same according to the present application, not to limit the scope of the present application. All equivalent changes or modifications made by the spirit of the application are intended to be covered by the scope of the application.
Claims (8)
1. A wafer carrier for a vapor phase growth apparatus, comprising:
a housing and a driving part arranged at one side of the housing,
a supporting cylinder is arranged in the shell, a plurality of second channels extending along the axial direction of the supporting cylinder are arranged in the supporting cylinder,
one side of the supporting cylinder is provided with a gas pumping ring and a tray which are sequentially stacked, the tray is internally provided with a first channel which is axially arranged along the tray, the center combination of the openings of the first channels, which are close to the wafer side, is circular,
the air pumping ring is disc-shaped, a plurality of first grooves are arranged at the edge of one side of the air pumping ring and are used for matching with the tray, fan-shaped vent holes which are axially arranged are uniformly arranged on the circumferential direction of the air pumping ring, vent grooves are arranged on one side, close to the center of a circle, of the fan-shaped vent holes, the vent grooves are communicated with the fan-shaped vent holes, the fan-shaped vent holes are arranged symmetrically along the center of the vent grooves,
a rotary carrying disc is arranged on one side of the supporting cylinder far away from the gas pumping ring, a third channel extending along the radial direction is arranged in the rotary carrying disc,
the rotating shaft of the driving part penetrates through the center of the bottom plate of the shell and is connected to the side, far away from the supporting cylinder, of the rotary carrying disc, a plurality of fourth channels extending along the axial direction of the rotating shaft are arranged on the rotating shaft, the side, far away from the shell, of the driving part is provided with a sealing cover, the sealing cover is provided with a first through hole, the first through hole is connected to a vacuumizing device through a pipeline, and the first through hole, the second channel, the third channel, the fourth channel and the first through hole are sequentially communicated based on the vacuumizing device to form a negative pressure channel so as to suck wafers on the tray.
2. The wafer carrier apparatus for a vapor phase growth apparatus of claim 1,
the central area of the tray is provided with a first concave part, and the periphery of the first concave part is provided with a plurality of first channels.
3. The wafer carrier apparatus for a vapor phase growth apparatus of claim 1,
the number of the fan-shaped vent holes is even and is in one-to-one matching correspondence with the number of the second channels, the air extraction ring is configured to be projected on the side of the supporting cylinder, and the fan-shaped vent holes cover the openings of the corresponding second channels.
4. The wafer carrier apparatus for a vapor phase growth apparatus of claim 1,
the periphery of the supporting cylinder is provided with a protective cylinder, and a second concave part is arranged on the side, far away from the gas pumping ring, of the supporting cylinder, and the second concave part is used for accommodating the rotary carrying disc.
5. The wafer carrier apparatus for a vapor phase growth apparatus of claim 1,
a fifth channel is arranged in the bottom plate of the shell along the radial direction of the bottom plate, one side of the fifth channel is communicated with the central perforation, the other side of the fifth channel is communicated with a second perforation, and the second perforation is used for being connected with an air source through a pipeline to be connected with inert gas.
6. The wafer carrier apparatus for a vapor phase growth apparatus of claim 1,
the cavity of the supporting cylinder is provided with a heating part, one side of the heating part is provided with a supporting part, and the supporting part sequentially penetrates through the rotary carrying disc, the hollow rotating shaft and the second magnetic fluid sealing device.
7. The wafer carrier apparatus for a vapor phase growth apparatus of claim 1,
a gap is formed between the outer side of the rotating shaft and the main body of the driving part.
8. A control method for a vapor phase growth apparatus equipped with the wafer carrier apparatus according to any one of claims 1 to 7, wherein the vapor phase growth apparatus is provided with a control module which is respectively connected to a first pressure gauge and a second pressure gauge, the first pressure gauge is used for obtaining the pressure of a reaction chamber, the second pressure gauge is provided on a pipeline of a vacuum pumping apparatus for obtaining the pressure value of the operation of the vacuum pumping apparatus, the first switch valve is used for controlling the communication between the chamber and a negative pressure pipeline, and the second switch valve is used for controlling the opening or closing of a vacuum pipeline, the control method comprising:
before the process starts, the first switch valve is opened, and the second switch valve is closed, so that the pressure of the reaction cavity is ensured to be the same as that of the vacuum channel;
the control module obtains a pressure value P1 of the first pressure gauge and a pressure value P2 of the second pressure gauge, and the P2 is set to be less than P1;
when the wafer is placed in the wafer carrying device, the first switch valve is closed, the second switch valve is opened, the pressure value between the pressure value P1 of the first pressure gauge and the pressure value P2 of the second pressure gauge is a fixed value delta P,
introducing process gas into the reaction cavity, wherein the pressure value of the first pressure gauge changes within a certain range,
the pressure control valve automatically adjusts the pressure of the negative pressure pipeline according to the pressure value of the changed first pressure gauge, so that the pressure difference between the pressure value of the first pressure gauge and the pressure value of the second pressure gauge is a fixed value delta P to maintain the suction of 30-150N to suck the wafer on the tray,
and after the process is finished, the second switch valve and the first switch valve are sequentially closed to ensure that the negative pressure pipeline is the same as the cavity pressure, and the wafer is taken out.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210567575.6A CN115044971B (en) | 2022-05-23 | 2022-05-23 | Wafer bearing device for vapor phase growth device and control method |
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| CN202210567575.6A CN115044971B (en) | 2022-05-23 | 2022-05-23 | Wafer bearing device for vapor phase growth device and control method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115478263B (en) * | 2022-09-20 | 2023-06-30 | 材料科学姑苏实验室 | Vapor phase growth device |
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| CN115044971A (en) | 2022-09-13 |
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