CN115031878A - Capacitive pressure sensor with hard core structure and preparation method thereof - Google Patents
Capacitive pressure sensor with hard core structure and preparation method thereof Download PDFInfo
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- CN115031878A CN115031878A CN202210797462.5A CN202210797462A CN115031878A CN 115031878 A CN115031878 A CN 115031878A CN 202210797462 A CN202210797462 A CN 202210797462A CN 115031878 A CN115031878 A CN 115031878A
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- core structure
- capacitive pressure
- pressure sensor
- hard core
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- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000012528 membrane Substances 0.000 claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 239000010703 silicon Substances 0.000 claims description 21
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 238000001259 photo etching Methods 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000000377 silicon dioxide Substances 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000000605 extraction Methods 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 11
- 230000000694 effects Effects 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000007789 sealing Methods 0.000 abstract description 6
- 238000006073 displacement reaction Methods 0.000 abstract description 5
- 230000009471 action Effects 0.000 abstract description 3
- 230000008859 change Effects 0.000 description 5
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
- G01L1/142—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors
- G01L1/148—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators using capacitors using semiconductive material, e.g. silicon
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention provides a capacitive pressure sensor with a hard core structure and a preparation method thereof. The capacitive pressure sensor with the hard core structure comprises a fixed electrode structure, a moving electrode structure, a closed cavity structure and an electrode leading-out interface, wherein the moving electrode structure consists of a flat membrane structure and the hard core structure. The capacitance pressure sensor with the hard core structure is designed on the basis of the flat membrane structure, so that the displacement changes of the capacitance pressure sensor are basically the same under the action of pressure, and the linearity of the capacitance pressure sensor is greatly improved. Meanwhile, the high sensitivity of the capacitive pressure sensor is ensured by optimally designing parameters such as the area, the thickness and the like of the hard core structure. If the pressure is too large, the hard core structure can be in contact with the upper surface of the fixed electrode structure, the overload protection effect is achieved, the manufacturing process is simple, and the manufactured capacitive pressure sensor has the advantages of being good in linearity, high in sensitivity, strong in overload resistance, good in sealing effect and the like.
Description
Technical Field
The invention belongs to the technical field of microelectronic sensors, and relates to a capacitive pressure sensor with a hard core structure and a preparation method thereof.
Background
The capacitance pressure sensor is a pressure sensor which is widely applied at the beginning of the 20 th century and the 70 th century, and can be divided into three forms of a variable-interval type, a variable-area type and a variable-medium type according to the pressure sensing principle, wherein the variable-interval type capacitance pressure sensor is most common due to the realization convenience, but the capacitance and the distance between the polar plates are in an inverse proportion relation, so the capacitance pressure sensor has the inherent nonlinear problem. Although the contact type capacitance pressure sensor can improve the nonlinearity of the contact type capacitance pressure sensor and can also perform overload protection, the deformation of the pressure sensing diaphragm is smaller and smaller along with the increase of the pressure, and the capacitance change is reduced along with the deformation, so the sensitivity of the contact type capacitance pressure sensor is obviously reduced. The capacitance change between the capacitance pressure sensor is mainly caused by the deformation of the pressure sensing diaphragm, so the problems of nonlinearity and sensitivity can be improved by designing the pressure sensing diaphragm, for example, the corrugated diaphragm has smaller concentrated stress and can generate larger deformation to improve the sensitivity, but the manufacturing process of the diaphragm is complex and difficult to realize, the displacement change of the diaphragm with a hard core structure is consistent under the action of pressure, the linearity is greatly improved, meanwhile, the sensitivity of the capacitance pressure sensor can be improved by optimizing the structural design, and the manufacturing process is simple and has good application prospect.
Disclosure of Invention
In view of the above existing problems and needs, the present invention provides a capacitive pressure sensor with a hard core structure and a method for manufacturing the same, which solves the inherent non-linearity problem of capacitive sensors, and has high sensitivity, strong overload resistance and good sealing effect.
The invention aims to provide a capacitive pressure sensor with a hard core structure, which comprises a fixed electrode structure, a moving electrode structure, a closed cavity structure and an electrode leading-out interface, wherein the moving electrode structure consists of a flat membrane structure and a hard core structure and is positioned above the whole structure, and the hard core structure is positioned below the flat membrane structure; the closed cavity structure is positioned right below the moving electrode structure; the fixed electrode structure is positioned on the insulating layer of the SOI substrate, and the electrode leading-out interfaces are respectively positioned above the two electrode structures.
The capacitive pressure sensor with the hard core structure is characterized in that the hard core structure is located at the center position below the flat membrane structure.
The capacitive pressure sensor with the hard core structure is characterized in that the flat membrane structure and the hard core structure are formed by the same silicon chip through a dry etching process; the closed cavity structure, the flat membrane structure and the hard core structure have the same shape, including but not limited to a square, a circle or any polygonal structure.
The capacitive pressure sensor with the hard core structure is characterized in that the upper surface and the lower surface of the fixed electrode structure are respectively provided with a layer of silicon dioxide film.
The capacitive pressure sensor with the hard core structure is characterized in that the lower surface of the hard core structure is parallel to the upper surface of the fixed electrode structure.
The capacitance pressure sensor with the hard core structure is characterized in that the area of the hard core structure is 0.6-0.9 times of that of the flat membrane structure; the height of the closed cavity structure is 0.3-0.5 times of the thickness of the flat membrane structure.
Compared with the prior structure, the capacitive pressure sensor with the hard core structure has the following advantages:
first, linearity is good. When the upper surface of the moving electrode structure is stressed by pressure, the upper surface of the moving electrode structure deforms, but the displacement change of the hard center area is consistent, and although the displacement change of the flat membrane area at the edge is different, the capacitance and nonlinearity generated by the flat membrane area are smaller due to the larger distance and smaller relative area with the fixed electrode structure, so that the linearity of the capacitance pressure sensor of the structure is greatly improved.
Secondly, the sensitivity is high. The high-sensitivity capacitance pressure sensor structure can be obtained by optimizing and simulating the parameters such as the thickness, the area, the thickness of the closed cavity and the like of the flat membrane and the hard core structure.
Thirdly, the overload resistance is strong. When the pressure that the dynamic electrode structure received is too big, the hard core structure can take place the contact and stop motion with the fixed electrode structure below, prevents that the dynamic electrode structure from taking place to break because of warping too big, plays overload protection's effect.
Fourthly, the sealing effect is good, and the short circuit phenomenon can not occur. The surface of the moving electrode structure is protected by a composite material film, so that the moving electrode structure is isolated from the outside, and the sealing effect is good; the surface of the fixed electrode structure is protected by an insulating layer, so that the short circuit phenomenon caused by the contact of the hard core structure and the fixed electrode is avoided.
The invention also aims to provide a preparation method of the capacitive pressure sensor with the hard core structure, which is simple in process and comprises the following steps:
depositing silicon dioxide on the front surface of an SOI silicon chip 1, photoetching and etching to form a cavity, and depositing the silicon dioxide again;
2, photoetching and etching the front surface of the SOI silicon wafer 2 to form a hard core structure and a flat membrane structure;
bonding and thinning the front surface of the SOI silicon wafer 1 and the front surface of the SOI silicon wafer 2;
4. photoetching and etching the SOI silicon wafer 2 to form a moving electrode structure;
5. growing a composite material film on the front surface, and photoetching and etching to form fixed electrode and moving electrode leading-out holes;
6. sputtering metal on the front surface, photoetching and corroding to form an electrode leading-out interface;
7. and (6) scribing.
The invention has the advantages and positive effects that:
the capacitance pressure sensor with the hard core structure is designed on the basis of the flat membrane, so that the displacement changes of the capacitance pressure sensor are basically the same under the action of pressure, and the linearity of the capacitance pressure sensor is greatly improved. Meanwhile, the high sensitivity of the capacitive pressure sensor is ensured by optimally designing parameters such as the area, the thickness and the like of the hard core structure. If the pressure is too large, the hard core structure can be contacted with the upper surface of the fixed electrode, so that the structure is prevented from being broken, and the overload protection effect is realized.
Compared with the traditional flat membrane and silicon island structure, the hard core structure not only solves the contradiction between the sensitivity and the linearity of the capacitance pressure sensor, but also can be used as a limiting structure to play a role in overload protection, and the manufacturing process is simple, so that the manufactured capacitance pressure sensor has the characteristics of good linearity, high sensitivity, strong overload resistance, good sealing effect and the like.
Drawings
Fig. 1 is a schematic structural view of a capacitive pressure sensor with a hard core structure according to the present invention.
Fig. 2(a) to 2(f) illustrate the main processes for manufacturing the capacitive pressure sensor of the present invention.
In the figure: 1-fixed electrode structure, 2-moving electrode structure, 3-closed cavity structure, 4-electrode leading-out interface, 5-flat membrane structure and 6-hard core structure
Detailed Description
Example 1: capacitive pressure sensor structure with hard core structure
Fig. 1 is a schematic diagram of a capacitive pressure sensor with a hard core structure. The structure comprises a fixed electrode structure 1, a moving electrode structure 2, a closed cavity structure 3 and an electrode leading-out interface 4. The dynamic electrode structure 2 consists of a flat membrane structure 5 and a hard core structure 6 and is positioned above the whole structure, and the hard core structure 6 is positioned below the flat membrane structure 5 and is formed by the same silicon wafer through an etching process; the closed cavity structure is positioned right below the moving electrode structure, is formed by bonding two SOI silicon chips and is sealed by a composite material film; the fixed electrode structure is positioned on an insulating layer of the SOI substrate, and the electrode leading-out interface 4 is respectively positioned above the fixed electrode structure 1 and the movable electrode structure 2.
Example 2: method for preparing capacitive pressure sensor with hard core structure
Fig. 2(a) to 2(f) show the main manufacturing processes of the capacitive pressure sensor with the hard core structure:
depositing silicon dioxide on the front surface of an SOI silicon chip 1, photoetching and etching to form a cavity, and depositing the silicon dioxide on the cavity to form an insulating layer, as shown in figure 2 (a);
2, photoetching and etching the front surface of the SOI silicon wafer 2 to form a hard core structure and a flat membrane structure, as shown in FIG. 2 (b);
bonding the front surface of the SOI silicon wafer 1 and the front surface of the SOI silicon wafer 2 to form a closed cavity, and corroding silicon and silicon dioxide on the back surface of the SOI silicon wafer 2 by a wet method, as shown in FIG. 2 (c);
4. photoetching and etching the SOI silicon wafer 2 to form a moving electrode structure, as shown in FIG. 2 (d);
5. growing a composite material film on the front surface, sealing, photoetching and etching the composite material film to form a fixed electrode and a moving electrode lead-out hole, as shown in fig. 2 (e);
6. sputtering metal on the front surface, photoetching and corroding the metal to form an electrode leading-out interface, so that the fixed electrode and the moving electrode structure can be connected with an external detection circuit, as shown in fig. 2 (f);
7. and (6) scribing.
The capacitive pressure sensor with the hard core structure is prepared by the method, and the capacitive pressure sensor with the hard core structure sequentially comprises an electrode leading-out interface 4, a moving electrode structure 2, a closed cavity structure 3 and a fixed electrode structure 1 from top to bottom, wherein the moving electrode structure 2 comprises a flat membrane structure 5 and a hard core structure 6, and the hard core structure 6 is arranged at the central position below the flat membrane structure 5. When having the pressure effect to act on, the dynamic electrode structure 2 takes place to warp, and the electric capacity that produces with deciding electrode structure 1 passes through electrode extraction interface 4 and external detection circuit connection, because of flat membrane structure electric capacity clearance is great, its capacitance value mainly produces by hard core structure, so the electric capacity pressure sensor linearity of this structure has very big improvement, simultaneously, when pressure is too big, hard core structure 6 is earlier with deciding electrode structure 1 contact, has prevented that flat membrane structure 5 from taking place to break because of warping too big, plays spacing guard's effect.
Claims (9)
1. The utility model provides a capacitive pressure sensor with hard heart structure, is including deciding electrode structure, moving electrode structure, airtight cavity structure and electrode extraction interface, decide electrode structure and be located the insulating layer of SOI substrate, airtight cavity structure is located the top of deciding electrode structure, moving electrode structure comprises flat membrane structure and hard heart structure, is located the top of airtight cavity structure, the electrode is drawn forth the interface and is located the top of deciding, moving electrode structure respectively.
2. A capacitive pressure transducer according to claim 1 having a stiff core structure centrally located beneath the flat membrane structure.
3. The capacitive pressure transducer with a hard core structure of claim 1, wherein the flat membrane structure and the hard core structure are formed simultaneously from the same silicon wafer by a dry etching process.
4. The capacitive pressure transducer with a hard core structure of claim 1, wherein the closed cavity structure, the flat membrane structure and the hard core structure have the same shape, and can be square, circular or any polygon.
5. The capacitive pressure transducer with a hard center structure of claim 1, wherein the top surface and the bottom surface of the fixed electrode structure have a silicon dioxide film.
6. A capacitive pressure transducer having a stiff core structure as claimed in claim 1 wherein the area of the stiff core structure is 0.6 to 0.9 times the area of the flat membrane structure.
7. A capacitive pressure transducer according to claim 1 having a rigid core structure wherein the lower surface of the rigid core structure is parallel to the upper surface of the fixed electrode structure.
8. The capacitive pressure transducer with a stiff core structure of claim 1 wherein the closed cavity structure has a height of 0.3 to 0.5 times the thickness of the flat membrane structure.
9. A capacitive pressure transducer with a stiff core structure according to claim 1, characterized in that it is manufactured by a method comprising the following steps in sequence:
(1) depositing silicon dioxide on the front surface of the SOI silicon chip 1, photoetching and etching to form a cavity, and depositing the silicon dioxide again;
(2) photoetching and etching the front surface of the SOI silicon wafer 2 to form a hard core structure and a flat membrane structure;
(3) bonding and thinning the front surface of the SOI silicon chip 1 and the front surface of the SOI silicon chip 2;
(4) photoetching and etching the SOI silicon wafer 2 to form a moving electrode structure;
(5) growing a composite material film on the front surface, and photoetching and etching to form fixed electrode and moving electrode leading-out holes;
(6) sputtering metal on the front surface, photoetching and corroding to form an electrode lead-out interface;
(7) and (6) scribing.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210797462.5A CN115031878A (en) | 2022-07-08 | 2022-07-08 | Capacitive pressure sensor with hard core structure and preparation method thereof |
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| CN202210797462.5A CN115031878A (en) | 2022-07-08 | 2022-07-08 | Capacitive pressure sensor with hard core structure and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115523961A (en) * | 2022-11-03 | 2022-12-27 | 南京元感微电子有限公司 | Gas and capacitance type pressure sensor and processing method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030019299A1 (en) * | 1998-03-31 | 2003-01-30 | Hitachi, Ltd. | Capacitive type pressure sensor |
| CN102998037A (en) * | 2012-09-15 | 2013-03-27 | 华东光电集成器件研究所 | Dielectric isolation piezoresistive pressure sensor and method for manufacturing same |
| CN104596685A (en) * | 2014-12-04 | 2015-05-06 | 刘玉珏 | MEMS process based miniature packaged F-P pressure sensor and forming method |
| CN109238518A (en) * | 2018-09-17 | 2019-01-18 | 胡耿 | Capacitive force-sensing element and its manufacturing method |
| CN112880883A (en) * | 2021-01-22 | 2021-06-01 | 慧石（上海）测控科技有限公司 | Pressure sensor and method for manufacturing the same |
| CN114459666A (en) * | 2022-02-14 | 2022-05-10 | 北京航空航天大学 | Capacitive differential pressure sensor, manufacturing method and application thereof |
-
2022
- 2022-07-08 CN CN202210797462.5A patent/CN115031878A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030019299A1 (en) * | 1998-03-31 | 2003-01-30 | Hitachi, Ltd. | Capacitive type pressure sensor |
| CN102998037A (en) * | 2012-09-15 | 2013-03-27 | 华东光电集成器件研究所 | Dielectric isolation piezoresistive pressure sensor and method for manufacturing same |
| CN104596685A (en) * | 2014-12-04 | 2015-05-06 | 刘玉珏 | MEMS process based miniature packaged F-P pressure sensor and forming method |
| CN109238518A (en) * | 2018-09-17 | 2019-01-18 | 胡耿 | Capacitive force-sensing element and its manufacturing method |
| CN112880883A (en) * | 2021-01-22 | 2021-06-01 | 慧石（上海）测控科技有限公司 | Pressure sensor and method for manufacturing the same |
| CN114459666A (en) * | 2022-02-14 | 2022-05-10 | 北京航空航天大学 | Capacitive differential pressure sensor, manufacturing method and application thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115523961A (en) * | 2022-11-03 | 2022-12-27 | 南京元感微电子有限公司 | Gas and capacitance type pressure sensor and processing method thereof |
| CN115523961B (en) * | 2022-11-03 | 2023-02-28 | 南京元感微电子有限公司 | Gas and capacitance type pressure sensor and processing method thereof |
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