CN115022425A - Image sensing module and electronic equipment - Google Patents

Abstract

The disclosure relates to the technical field of electronic equipment, in particular to an image sensing module and electronic equipment, wherein the image sensing module comprises a substrate, a pixel layer and a shading layer, and the substrate is provided with a first pixel area and a second pixel area; the pixel layer is arranged on one side of the substrate and comprises a first pixel unit, a second pixel unit and a third pixel unit, the first pixel unit is arranged in the first pixel area and used for sensing to generate an imaging signal, the second pixel unit is arranged in the second pixel area and used for detecting a dark current signal, the third pixel unit is arranged in the second pixel area and used for sensing to generate a light sensing signal; the light shielding layer is arranged on one side, far away from the substrate, of the pixel layer, and covers the second pixel unit. The screen occupation ratio of the electronic equipment can be improved, and the manufacturing process of the electronic equipment is simplified.

Description

Image sensing module and electronic equipment

Technical Field

The disclosure relates to the technical field of electronic equipment, in particular to an image sensing module and electronic equipment.

Background

In electronic devices such as mobile phones, a light sensing device is often required to be provided, and the light sensing device is used for detecting the brightness of ambient light. The light sensing device is disposed inside the electronic device, and transmits ambient light to the light sensing device in order to detect the brightness of the ambient light. At present, a light-transmitting slit is usually disposed at the edge of the electronic device, and ambient light enters the light sensing device through the slit. The black edge of the display screen can be increased by arranging the slit at the edge of the electronic equipment, the screen occupation ratio of the electronic equipment is reduced, and the manufacturing difficulty of arranging the slit at the edge of the electronic equipment is higher.

It is to be noted that the information disclosed in the above background section is only for enhancement of understanding of the background of the present disclosure, and thus may include information that does not constitute prior art known to those of ordinary skill in the art.

Disclosure of Invention

The present disclosure is directed to an image sensor module and an electronic device, so as to increase the screen occupation ratio of the electronic device and simplify the manufacturing process of the electronic device.

According to an aspect of the present disclosure, there is provided an image sensing module, including:

a substrate having a first pixel region and a second pixel region;

the pixel layer is arranged on one side of the substrate and comprises a first pixel unit, a second pixel unit and a third pixel unit, the first pixel unit is arranged in the first pixel area and used for sensing and generating an imaging signal, the second pixel unit is arranged in the second pixel area and used for detecting a dark current signal, the third pixel unit is arranged in the second pixel area and used for sensing and generating a light sensing signal;

the light shielding layer is arranged on one side, far away from the substrate, of the pixel layer and covers the second pixel unit.

According to another aspect of the present disclosure, an electronic device is provided, which includes the image sensing module.

The image sensing module provided by the embodiment of the disclosure generates an imaging signal through the sensing of the first pixel unit of the first pixel area, the second pixel unit of the second pixel area detects a dark current signal, and the third pixel unit of the second pixel area generates a light sensing signal through the sensing of the third pixel unit, so that the detection of the ambient light brightness through the image sensing module is realized, a light-transmitting slit can be avoided being arranged on the electronic equipment, the screen occupation ratio of the electronic equipment can be further improved, and the manufacturing process of the electronic equipment is simplified.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and together with the description, serve to explain the principles of the disclosure. It is to be understood that the drawings in the following description are merely exemplary of the disclosure, and that other drawings may be derived from those drawings by one of ordinary skill in the art without the exercise of inventive faculty.

Fig. 1 is a schematic view of a first image sensing module according to an exemplary embodiment of the disclosure;

fig. 2 is a schematic diagram of a second image sensing module according to an exemplary embodiment of the disclosure;

fig. 3 is a schematic diagram of a third image sensing module according to an exemplary embodiment of the disclosure;

fig. 4 is a schematic diagram of a fourth image sensing module according to an exemplary embodiment of the disclosure;

fig. 5 is a schematic diagram of a fifth image sensing module according to an exemplary embodiment of the disclosure;

fig. 6 is a schematic diagram of an acquisition unit provided in an exemplary embodiment of the present disclosure;

fig. 7 is a timing diagram illustrating control of an acquisition unit according to an exemplary embodiment of the present disclosure;

fig. 8 is a schematic diagram of a sixth image sensing module according to an exemplary embodiment of the disclosure;

fig. 9 is a schematic diagram of a seventh image sensing module according to an exemplary embodiment of the present disclosure;

fig. 10 is a schematic diagram of a second sub-pixel region according to an exemplary embodiment of the disclosure;

fig. 11 is a schematic view of an electronic device provided in an exemplary embodiment of the present disclosure.

Detailed Description

Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus their detailed description will be omitted.

Although relative terms, such as "upper" and "lower," may be used in this specification to describe one element of an icon relative to another, these terms are used in this specification for convenience only, e.g., in accordance with the orientation of the examples described in the figures. It will be understood that if the illustrated device is turned upside down, elements described as "upper" will be those that are "lower". When a structure is "on" another structure, it may mean that the structure is integrally formed with the other structure, or that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via another structure.

First, an exemplary embodiment of the present disclosure provides an image sensing module 10, as shown in fig. 1 and 2, the image sensing module 10 includes: the liquid crystal display panel comprises a substrate 100, a pixel layer 200 and a light shielding layer 300, wherein the substrate 100 is provided with a first pixel area 110 and a second pixel area 120; the pixel layer 200 includes a first pixel unit 211, a second pixel unit 212 and a third pixel unit 213, the first pixel unit 211 is disposed in the first pixel region 110, the first pixel unit 211 is used for sensing and generating an imaging signal, the second pixel unit 212 is disposed in the second pixel region 120, the second pixel unit 212 is used for detecting a dark current signal, the third pixel unit 213 is disposed in the second pixel region 120, and the third pixel unit 213 is used for sensing and generating a light sensing signal; the light-shielding layer 300 is disposed on a side of the pixel layer 200 away from the substrate 100, and the light-shielding layer 300 covers the second pixel unit 212 in a thickness direction of the substrate.

The first pixel unit 211 can convert an optical signal into an electrical signal, the first pixel unit 211 is configured to acquire the optical signal during shooting, the electrical signal converted by the first pixel unit 211 is an imaging signal, and the imaging signal is configured to form an image during shooting. The dark current is a reverse current generated by the photodiode under a reverse bias condition in a dark environment, and the second pixel unit 212 detects the dark current, thereby performing correction compensation on a signal generated by the first pixel unit 211. The third pixel unit 213 can convert the light signal into an electrical signal, and the third pixel unit 213 obtains the ambient light and converts the ambient light into a light sensing signal, which is used to determine the brightness of the ambient light.

The image sensing module 10 provided by the embodiment of the present disclosure generates an imaging signal by sensing the first pixel unit 211 of the first pixel area 110, detects a dark current signal by the second pixel unit 212 of the second pixel area 120, and generates a light sensing signal by sensing the third pixel unit 213 of the second pixel area 120, so as to detect ambient light brightness by the image sensing module 10, avoid setting a light-transmitting slit on the electronic device, further improve a screen occupation ratio of the electronic device, and simplify a manufacturing process of the electronic device. And the proximity detection of the electronic device can be realized through the third pixel unit 212, thereby avoiding the need of arranging a separate proximity sensing device on the electronic device, further reducing the cost of the electronic device, and being beneficial to saving the cloth space in the electronic device.

The following will describe each part of the image sensing module 10 provided in the embodiment of the present disclosure in detail:

the substrate 100 may have a first pixel region 110 and a second pixel region 120, the first pixel region 110 being used to arrange the first pixel unit 211, and the second pixel region 120 being used to arrange the second pixel unit 212 and the third pixel unit 213. The second pixel region 120 may at least partially surround the first pixel region 110, and for example, the first pixel region 110 may be adjacent to the second pixel region 120 as shown in fig. 3; alternatively, as shown in fig. 2, the second pixel region 120 may surround the first pixel region 110; alternatively, as shown in fig. 4, the second pixel region 120 may partially surround the first pixel region 110, for example, the second pixel region 120 may partially surround the first pixel region, the second pixel region 120 may surround the first pixel region 110 by three quarters, and so on.

When the first pixel region 110 and the second pixel region 120 are adjacent to each other, the substrate 100 may include a plurality of second pixel regions 120, and the plurality of second pixel regions 120 may be distributed around the first pixel region 110. The first and second pixel regions 110 and 120 may meet or a gap may be provided between the first and second pixel regions 110 and 120. When the second pixel region 120 surrounds the first pixel region 110, the second pixel region 120 may be a ring structure, and the first pixel region 110 is located in the ring structure. The first and second pixel regions 110 and 120 may meet or a gap may be provided between the first and second pixel regions 110 and 120.

As shown in fig. 5, the base board 100 may include a substrate 11 and a signal acquisition circuit layer 12, the signal acquisition circuit layer 12 is disposed on the substrate 11, and the first pixel unit 211, the second pixel unit 212, and the third pixel unit 213 are disposed on a side of the signal acquisition circuit layer 12 away from the substrate 11.

The substrate 11 may be a silicon substrate 100, a glass substrate 100, or the like. The signal acquisition circuit layer 12 may include a first acquisition unit 111, a second acquisition unit 112, and a third acquisition unit 113, where the first acquisition unit 111 is connected to the first pixel unit 211, and the first acquisition unit 111 is configured to acquire an imaging signal; the second collecting unit 112 is connected to the second pixel unit 212, and the second collecting unit 112 is configured to collect a dark current signal; the third collecting unit 113 is connected to the third pixel unit 213, and the third collecting unit 113 is used for collecting the light sensing signal.

The first collecting unit 111 is connected to the first pixel unit 211, and an electric signal generated by the first pixel unit 211 in response to the optical signal is transmitted to the first signal collecting circuit. The first pixel region 110 is provided with a plurality of first pixel units 211, the plurality of first pixel units 211 are distributed in the first pixel region 110 in an array manner, and each first pixel unit 211 is correspondingly connected with a first acquisition unit.

For example, the first pixel region 110 may include M × N first pixel units 211, that is, the first pixel units 211 are distributed in an array of M rows and N columns. The acquisition circuit layer may include M × N first acquisition units therein. The imaging signal output by the first acquisition unit can be a line-by-line scanning or a column-by-column scanning mode.

As shown in fig. 6, the first collecting unit 111 may include a first MOS transistor M1, a second MOS transistor M2, a third MOS transistor M3, a fourth MOS transistor M4, and a capacitor C, a first end of the first MOS transistor M1 is connected to the first pixel unit 211, a second end of the first MOS transistor M1 is connected to the first node, and a control end of the first MOS transistor M1 is connected to the write control signal. The first end of the second MOS transistor M2 is connected to the first node, the second end of the second MOS transistor M2 is connected to the reset signal, and the control end of the second MOS transistor M2 is connected to the reset control signal end. The first end of the capacitor C is connected with the first node, and the second end of the capacitor C is connected with the reference signal end. A first terminal of the third MOS transistor M3 is connected to the power source terminal, a second terminal of the third MOS transistor M3 is connected to the second node, and a control terminal of the third MOS transistor M3 is connected to the first node. The first end of the fourth MOS transistor M4 is connected to the second node, the second end of the fourth MOS transistor M4 is connected to the output signal line, and the control end of the fourth MOS transistor M4 is connected to the scan signal end.

Referring to the timing chart shown in fig. 7, the operation of the first acquisition unit in one frame of imaging signal acquisition may be as follows:

the t1 time period (writing phase), the first pixel unit 211 receives the light signal and converts the light signal into an electric signal. The control terminal of the first MOS transistor M1 receives the write control signal, and the first MOS transistor M1 is turned on in response to the write control signal S1, so as to transmit the electrical signal generated by the first pixel unit 211 to the first node and write the electrical signal into the capacitor C.

In the time period t2 (output phase), the electric signal written into the capacitor C is applied to the control terminal of the third MOS transistor M3, and the third MOS transistor M3 is turned on in response to the signal. When the fourth MOS transistor M4 is turned on in response to the scan signal S2, the power signal VDD forms a current signal through the third MOS transistor M3 and the fourth MOS transistor M4, and the current signal is output through the output signal line Vout.

In a period t3 (reset phase), the reset control signal terminal outputs a reset control signal, and the second MOS transistor M2 is turned on in response to the reset control signal S3 to write the reset signal into the capacitor C. The reset signal controls the third MOS transistor M3 to turn off.

The amplification of the imaging signal generated by the first pixel unit 211 is realized through the circuit of the first acquisition unit 111, which is beneficial to the application of the electrical signal in the subsequent processing, and avoids the phenomenon that the electrical signal transmitted in the subsequent processing is too weak and brings larger error.

The writing phase, the output phase and the reset phase may be repeated at the next frame signal acquisition.

Certainly, in practical applications, the first collecting unit 111 may also include other circuits, for example, the first collecting unit 111 may include a switch, a first end of the switch is connected to the first pixel unit 211, a second end of the switch is connected to the output signal line, and a control end of the switch is connected to the scanning signal end. The switch is turned on in response to a scan signal to output an imaging signal.

The second pixel unit 212 is disposed in the second pixel region 120, and the second collecting unit 112 is connected to the second pixel unit 212. When the first pixel unit 211 acquires an imaging signal, the second acquisition unit 112 acquires a dark current signal by which the imaging signal is compensated. Therefore, the influence of dark current on an imaging signal is eliminated, and the imaging quality of the image sensor is improved.

The second acquisition unit 112 may include a first MOS transistor M1, a second MOS transistor M2, a third MOS transistor M3, a fourth MOS transistor M4, and a capacitor C, wherein a first end of the first MOS transistor M1 is connected to the second pixel unit 212, a second end of the first MOS transistor M1 is connected to the first node, and a control end of the first MOS transistor M1 is connected to the write control signal. The first end of the second MOS transistor M2 is connected to the first node, the second end of the second MOS transistor M2 is connected to the reset signal, and the control end of the second MOS transistor M2 is connected to the reset control signal end. The first end of the capacitor C is connected with the first node, and the second end of the capacitor C is connected with the reference signal end. A first terminal of the third MOS transistor M3 is connected to the power source terminal, a second terminal of the third MOS transistor M3 is connected to the second node, and a control terminal of the third MOS transistor M3 is connected to the first node. The first end of the fourth MOS transistor M4 is connected to the second node, the second end of the fourth MOS transistor M4 is connected to the output signal line, and the control end of the fourth MOS transistor M4 is connected to the scan signal end.

The operation of the second acquisition unit 112 in one frame of imaging signal acquisition may be as follows:

in the time period t1 (writing phase), the second pixel unit 212 outputs dark current, the control terminal of the first MOS transistor M1 receives the writing control signal S1, and the first MOS transistor M1 is turned on in response to the writing control signal to transmit the dark current signal to the first node and write the dark current signal into the capacitor C.

In the time period t2 (output phase), the dark current signal written into the capacitor C is applied to the control terminal of the third MOS transistor M3, and the third MOS transistor M3 is turned on in response to the signal. When the fourth MOS transistor M4 is turned on in response to the scan signal S2, the power signal forms a current signal through the third MOS transistor M3 and the fourth MOS transistor M4, and the current signal is output through the output signal line.

In a time period t3 (reset phase), the reset control signal terminal outputs a reset control signal S3, and the second MOS transistor M2 is turned on in response to the reset control signal to write the reset signal into the capacitor C. The reset signal controls the third MOS transistor M3 to turn off.

The timing of the second capture unit 112 may be identical to the timing of the first capture unit 111, since the dark current is related to the environment in which the image sensor is located, such as temperature. Therefore, the time sequence of the second acquisition unit is consistent with that of the first acquisition unit, the dark current can be accurately detected, and the compensation of the dark current is facilitated.

The dark current signal generated by the second pixel unit 212 is amplified by the circuit of the second acquisition unit 112, which is beneficial to the application of the electrical signal in the subsequent processing, and avoids the electrical signal transmitted in the subsequent processing from being too weak to bring a large error.

In practical applications, the second capturing unit 112 may also include other circuits, for example, the second capturing unit 112 may include a switch, a first terminal of the switch is connected to the second pixel unit 212, a second terminal of the switch is connected to the output signal line, and a control terminal of the switch is connected to the scan signal segment. The switch is turned on in response to a scan signal to output a dark current signal.

The third pixel unit 213 is disposed in the second pixel region 120, and the third collecting unit 113 is connected to the third pixel unit 213. When the electronic device is in use, the third collecting unit 113 collects the light sensing signal in real time, and determines the brightness of the ambient light according to the light sensing signal.

The third collecting unit 113 is turned on in response to the light sensing control signal every predetermined time to obtain the light sensing signal. For example, the third collecting unit 113 may collect the light sensing signal once every 1 mm, 5 ms, 10 ms, 100 ms, 1 second, or the like.

The third collecting unit 113 may include a first switch and a second switch, a first terminal of the first switch is connected to the third pixel unit 213, a second terminal of the first switch is connected to a first terminal of the second switch, and a control terminal of the first switch is connected to the light sensing control terminal. The second end of the second switch is connected with the light sensing signal wire, and the control end of the second switch is connected with the acquisition control end. The light sense control terminal is used for outputting a light sense control signal, the light sense control signal can be a clock signal, the light sense control signal can have a working level and a turn-off level in one period, and the duration time of the turn-off level is a preset time interval. The acquisition control end is used for outputting acquisition control signals, and the acquisition control signals can control the second switch to be switched on when the electronic equipment needs to acquire the ambient light brightness. The light sensing signal line is used for outputting a light sensing signal, and the light sensing signal line can be connected with a microprocessor or a processor of the electronic device.

For example, the first switch may include a first MOS transistor, the second switch may include a second MOS transistor, a first end of the first MOS transistor is connected to the third pixel unit 213, a second end of the first MOS transistor is connected to a first end of the second MOS transistor, and a control end of the first MOS transistor is connected to the light sensing control end. The second end of the second MOS tube is connected with the light sensation signal line, and the control end of the second MOS tube is connected with the acquisition control end. The first MOS transistor is turned on in response to the light sensing control signal to transmit the light sensing signal generated by the third pixel unit 213 to the first end of the second MOS transistor, and the second MOS transistor is turned on in response to the collection control signal to transmit the light sensing signal to the light sensing signal line.

Of course, in practical applications, the third collecting unit 113 may also include a circuit as shown in fig. 6, which is not specifically limited in this embodiment of the disclosure.

The second pixel region 120 includes a first sub-pixel region 121 and a second sub-pixel region 122, and the second sub-pixel region 122 may be adjacent to the first sub-pixel region 121, or the second sub-pixel region 122 may be embedded in the first sub-pixel region 121. The second sub-pixel region may include 2 × 2 third pixel units therein. The plurality of third pixel units respectively detect the ambient light brightness, and the ambient brightness can be determined through linear combination of the ambient brightness values detected by the plurality of third pixel units. For example, the average value of a plurality of luminance values or the mode of a plurality of luminance values may be used.

Illustratively, the first sub-pixel region 121 surrounds the first pixel region 110, the second pixel unit 212 is disposed in the first sub-pixel region 121, the second sub-pixel region 122 is disposed between the first pixel region 110 and the first sub-pixel region 121, and the third pixel unit 213 is disposed in the second sub-pixel region 122.

The first sub-pixel area 121 is a rectangular ring, one or more notches are formed in the inner side of the rectangular ring, and the second sub-pixel area 122 is located in the notch. The first pixel region 110 is disposed within the rectangular ring. For example, a second sub-pixel region 122 is disposed at a midpoint of each edge of the rectangular ring. In practical applications, the second sub-pixel region may also be disposed in other regions, for example, the second sub-pixel region may be disposed at a vertex of the rectangular ring of the first sub-pixel region, and the disclosure is not limited thereto.

Since the second pixel unit 212 is used for collecting dark current, the second pixel unit 212 needs to be isolated from the first pixel unit 211 and the third pixel unit 213, so as to prevent the light of the first pixel unit 211 and the third pixel unit 213 from affecting the collection of dark current. As shown in fig. 8, the image sensing module 10 according to the embodiment of the disclosure may further include a first light-shielding bar 312 and a second light-shielding bar 313, the first pixel region 110 is provided with a first isolation groove at an edge of the forward projection region on the pixel layer 200, and the first light-shielding bar 312 is provided in the first isolation groove. The first light-shielding strip 312 surrounds the first pixel unit 211, and prevents light leakage from the first pixel unit 211. The second sub-pixel region 122 is provided with a second isolation groove at the edge of the forward projection region of the pixel layer 200, and the second light-shielding bar 313 is provided in the second isolation groove. The second light-shielding bar 313 surrounds the third pixel unit 213, preventing light leakage from the third pixel unit 213.

The first pixel region 110 is a rectangular region, the orthographic projection of the first pixel region 110 on the pixel layer 200 is also a rectangular region, and a rectangular annular first isolation groove is arranged at the edge of the rectangular region of the pixel layer 200. The annular isolation groove is provided with an opening at a side of the pixel layer 200 away from the substrate 100, and extends from the side of the pixel layer 200 away from the substrate 100 to a side of the pixel layer 200 close to the substrate 100. That is, the ring-shaped isolation trench may penetrate the pixel layer 200. Of course, in practical applications, the annular isolation trench may not penetrate through the pixel layer 200, and the embodiment of the disclosure is not limited thereto.

The first sub-pixel region 121 is a rectangular ring structure, the first sub-pixel region 121 surrounds the first pixel region 110, and the second sub-pixel region 122 is embedded in the first sub-pixel region 121. For example, one or more notches are formed on the inner side of the rectangular ring, and the second sub-pixel region 122 is located in the notch. The inner side of the rectangular ring means the side near the center of the rectangle. The second sub-pixel region 122 is provided with a second isolation groove at the edge of the forward projection region on the pixel layer 200, and the second isolation groove surrounds the third pixel unit 213. The second isolation groove is provided with an opening at a side of the pixel layer 200 away from the substrate 100, and extends from the side of the pixel layer 200 away from the substrate 100 to a side of the pixel layer 200 close to the substrate 100. That is, the ring-shaped isolation trench may penetrate through the pixel layer 200. Of course, in practical applications, the annular isolation trench may not penetrate through the pixel layer 200, and the embodiment of the disclosure is not limited thereto.

The first isolation groove may be connected to the second isolation groove, that is, the isolation groove is shared at a position where the first pixel region 110 and the second sub-pixel region 122 are connected to each other, and the shared isolation groove can save the material of the isolation groove and save the manufacturing process of the isolation groove.

The pixel layer 200 may include a first pixel unit 211, a second pixel unit 212, and a third pixel unit 213. The first pixel unit 211 may include a photodiode. The photodiode receives light incident from the lens assembly of the electronic device, and converts an optical signal into an electrical signal, which is used to form a photographed image.

The second pixel unit may be a Dummy pixel unit (a spare pixel unit), the second pixel unit 212 may include a photodiode, and the photodiode of the second pixel unit 212 may be identical to the photodiode of the first pixel unit 211. While the first pixel unit 211 is operated, the photodiode of the second pixel unit 212 collects a dark current, which is used to correct an imaging signal. Of course, the second pixel unit may be other pixel units, and the embodiment of the disclosure is not limited thereto.

The third pixel unit 213 may include a photodiode for collecting brightness information of light in the environment. Light in the environment enters the third pixel unit 213 through a lens module in the electronic device, and the light signal is converted into an electrical signal through a photodiode. The brightness of the light in the environment is proportional to the current value generated by the diode.

Further, as shown in fig. 9, the pixel circuit layer in the embodiment of the disclosure may further include a filter 410, and an orthogonal projection of the filter 410 on the substrate 100 may coincide with the first pixel region 110, that is, the filter 410 may cover a pixel array formed by the plurality of first pixel units 211. The filter 410 may include a plurality of filter units, each corresponding to one of the first pixel units 211. For example, the filter 410 may include RGB filter units, which are spaced apart from each other and convert external light into RGB light of three primary colors to convert corresponding light signals into electrical signals through photodiodes.

It is understood that the filter 410 may further include an infrared filter unit for transmitting infrared light and filtering visible light. The corresponding first pixel unit 211 corresponding to the infrared filter unit may be an infrared pixel unit, and the infrared pixel unit is configured to collect an infrared signal.

The light-shielding layer 300 is disposed on a side of the pixel layer 200 away from the substrate 100, and the light-shielding layer 300 covers the second pixel unit 212. The light-shielding layer 300 may be in the same layer as the filter 410, that is, the light-shielding layer 300 may surround the filter 410. The orthographic projection of the light-shielding layer 300 on the substrate 100 may coincide with the first sub-pixel region 121, and a notch is disposed on the light-shielding layer 300 at a position corresponding to the second sub-pixel region 122. That is, the third pixel unit 213 is exposed to the light-shielding layer 300.

The light shielding layer 300 may be made of a black light shielding material, for example, the material of the light shielding layer may be resin or rubber. Or the light shielding layer can be made of a reflective material, for example, the material of the light shielding layer can be aluminum, magnesium, silver, or the like. The light-shielding layer 300 may be formed by vapor deposition, and during the deposition, a mask may be covered on the pixel layer, the mask covers the first pixel unit 211 and the third pixel unit 213, the second pixel unit 212 is exposed to the mask, and a deposition material is deposited above the second pixel unit 212. Or, the light-shielding layer may be formed by etching, first forming an entire light-shielding material layer on the pixel layer 200, and then etching through a mask that shields the second pixel unit 212 and exposes the first pixel unit 211 and the third pixel unit 213.

As shown in fig. 10, a first filter 421 and a second filter 422 may be disposed at the notch on the light-shielding layer 300, where the first filter 421 corresponds to at least one third pixel unit 213, and the second filter 422 corresponds to at least one third pixel unit 213. The first filter 421 is used for transmitting visible light, and the second filter 422 is used for transmitting infrared light. That is, the visible light sensing signal and the infrared light sensing signal can be independently collected, and the visible light brightness and the infrared light intensity can be independently collected in the subsequent processing process through the independently collected visible light sensing signal and the independently collected infrared light sensing signal.

On the basis of the infrared light sensation signal, the infrared light sensation signal can also be used for distance detection. For example, an infrared emitter may be provided on the electronic device, and the infrared emitter outputs infrared light of a preset wavelength, which is reflected when contacting an external obstacle. The third pixel unit 213 serves as a receiver for receiving the reflected infrared light, thereby enabling detection of the distance between the electronic device and the obstacle.

The light-shielding layer 300 covers a side of the pixel layer 200 away from the substrate 100, and the light-shielding layer 300 extends to the first isolation groove and the second isolation groove, and the light-shielding layer 300 is connected to the first light-shielding bar 312 and the second light-shielding bar 313. The light shielding layer 300, the first light shielding bar 312 and the second light shielding bar 313 may be integrally formed, for example, the light shielding layer 300, the first light shielding bar 312 and the second light shielding bar 313 may be formed by one deposition. The material of the light-shielding layer 300 may be the same as the materials of the first light-shielding bars 312 and the second light-shielding bars 313.

The image sensing module 10 provided by the embodiment of the present disclosure generates an imaging signal by sensing the first pixel unit 211 of the first pixel area 110, detects a dark current signal by the second pixel unit 212 of the second pixel area 120, and generates a light sensing signal by sensing the third pixel unit 213 of the second pixel area 120, so as to detect ambient light brightness by the image sensing module 10, avoid setting a light-transmitting slit on the electronic device, further improve a screen occupation ratio of the electronic device, and simplify a manufacturing process of the electronic device. And the proximity detection of the electronic device can be realized through the third pixel unit 213, thereby avoiding the need to arrange a separate proximity sensing device on the electronic device, further reducing the cost of the electronic device, and being beneficial to saving the internal cloth space of the electronic device.

The exemplary embodiment of the present disclosure further provides an electronic device, as shown in fig. 11, the electronic device includes the image sensing module 10 described above.

The image sensing module 10 includes: the liquid crystal display panel comprises a substrate 100, a pixel layer 200 and a light shielding layer 300, wherein the substrate 100 is provided with a first pixel area 110 and a second pixel area 120; the pixel layer 200 includes a first pixel unit 211, a second pixel unit 212 and a third pixel unit 213, the first pixel unit 211 is disposed in the first pixel region 110, the first pixel unit 211 is used for sensing and generating an imaging signal, the second pixel unit 212 is disposed in the second pixel region 120, the second pixel unit 212 is used for detecting a dark current signal, the third pixel unit 213 is disposed in the second pixel region 120, and the third pixel unit 213 is used for sensing and generating a light sensing signal; the light-shielding layer 300 is disposed on a side of the pixel layer 200 away from the substrate 100, and the light-shielding layer 300 covers the second pixel unit 212.

According to the electronic device provided by the embodiment of the disclosure, the imaging signal is generated by the first pixel unit 211 of the first pixel area 110 through sensing, the dark current signal is detected by the second pixel unit 212 of the second pixel area 120, and the light sensing signal is generated by the third pixel unit 213 of the second pixel area 120 through sensing, so that the ambient light brightness is detected by the image sensing module 10, a light-transmitting slit can be prevented from being formed in the electronic device, the screen occupation ratio of the electronic device can be further improved, and the manufacturing process of the electronic device is simplified. And the proximity detection of the electronic device can be realized through the third pixel unit 213, which avoids the need to arrange a separate proximity sensing device on the electronic device, can further reduce the cost of the electronic device, and is also beneficial to saving the cloth space in the electronic device.

Further, the electronic device provided by the embodiment of the present disclosure may further include: the display panel 20 and the isolation layer 22, the display panel is disposed on the light-entering side of the image sensing module 10, the display panel is provided with a light hole 21, and the image sensing module 10 is opposite to the light hole. The isolation layer 22 is disposed on a sidewall of the light hole 21, and the isolation layer 22 is used for blocking light of the display panel 20. That is, the image sensing module 10 provided in the embodiment of the present disclosure may be used in a front camera module of an electronic device.

Through set up isolation layer 22 in the light trap 21 on display panel 20, avoid showing light and get into image sensing module 10, avoid showing light influence formation of image when shooting on the one hand, avoid showing light influence testing result when detecting external light luminance on the other hand.

The electronic device provided by the embodiment of the disclosure may be an electronic device provided with a front camera, such as a mobile phone, a tablet computer, an electronic reader, or a wearable device, and the electronic device is described below by taking the electronic device as a mobile phone as an example.

The electronic device may further include a middle frame 30, a main board 40, a battery 50, a rear cover 60, a lens module, and the like, wherein the display panel 20, the middle frame 30, and the rear cover 60 form an accommodating space for accommodating other electronic components or functional modules of the electronic device. Meanwhile, the display panel 20 forms a display surface of the electronic device for displaying information such as images, texts, and the like. The Display panel 20 may be a Liquid Crystal Display (LCD) or an Organic Light-Emitting Diode (OLED) Display.

A glass cover plate may be disposed on the display panel 20. The glass cover plate may cover the display panel 20 to protect the display panel 20 and prevent the display panel 20 from being scratched or damaged by water.

The display panel 20 may include a display area and a non-display area. Wherein the display area performs the display function of the display panel 20 for displaying information such as images, text, etc. The non-display area does not display information. The non-display area can be used for arranging functional modules such as a camera, a receiver, a proximity sensor and the like. In some embodiments, the non-display area may include at least one area located at an upper portion and a lower portion of the display area.

The display panel 20 is provided with a light hole, the lens module can be disposed in the light hole, and the external light enters the image sensing module through the lens module. When the electronic equipment takes a picture, a pixel array formed by the first pixel units acquires an imaging signal and forms a shot image according to the imaging signal. The second pixel unit detects a dark current signal while photographing, and an image can be compensated using the dark current signal while forming a photographed image. When the electronic equipment is in a non-shooting state, the third pixel unit works and collects the ambient light brightness in real time.

The middle frame 30 may be a hollow frame structure. The material of the middle frame 30 may include metal or plastic. The main board 40 is installed in the accommodating space. For example, the main board 40 may be mounted on the middle frame 30 and be received in the receiving space together with the middle frame 30. The main board 40 is provided with a grounding point to realize grounding of the main board 40. The image sensing module may be mounted to the middle frame, for example, a protruding mounting portion may be provided on the middle frame, and the image sensing module is mounted to the protruding portion.

One or more of the functional modules such as a motor, a microphone, a receiver, an earphone interface, a universal serial bus interface (USB interface), a proximity sensor, an ambient light sensor, a gyroscope, a storage unit, and a processing unit may be integrated on the main board 40. Meanwhile, the display panel 20 may be electrically connected to the main board 40. The image sensor may also be disposed on the motherboard.

The main board 40 is also provided with a display control circuit. The display control circuit outputs an electric signal to the display panel 20 to control the display panel 20 to display information. The light emitting control unit and the color change control unit may be provided on the main board.

The battery 50 is mounted inside the receiving space. For example, the battery 50 may be mounted on the middle frame 30 and received in the receiving space together with the middle frame 30. The battery 50 may be electrically connected to the motherboard 40 to enable the battery 50 to power the electronic device. The main board 40 may be provided with a power management circuit. The power management circuit is used to distribute the voltage provided by the battery 50 to the various electronic components in the electronic device.

The rear cover 60 is used to form the outer contour of the electronic device. The rear cover 60 may be integrally formed. In the forming process of the rear cover 60, structures such as a rear camera hole and a fingerprint identification module mounting hole can be formed on the rear cover 60. The camera assembly 10 may be provided on a main board and a center frame, and the camera assembly 10 receives light from the rear camera hole. Of course, in practical applications, the camera head assembly 10 may also be a front camera head, and the embodiment of the present disclosure is not limited thereto.

According to the electronic device provided by the embodiment of the disclosure, the imaging signal is generated by the first pixel unit 211 of the first pixel area 110 through sensing, the dark current signal is detected by the second pixel unit 212 of the second pixel area 120, and the light sensing signal is generated by the third pixel unit 213 of the second pixel area 120 through sensing, so that the ambient light brightness is detected by the image sensing module 10, a light-transmitting slit can be prevented from being formed in the electronic device, the screen occupation ratio of the electronic device can be further improved, and the manufacturing process of the electronic device is simplified. And the proximity detection of the electronic device can be realized through the third pixel unit 213, which avoids the need to arrange a separate proximity sensing device on the electronic device, can further reduce the cost of the electronic device, and is also beneficial to saving the cloth space in the electronic device.

Other embodiments of the disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure disclosed herein. This application is intended to cover any variations, uses, or adaptations of the disclosure following, in general, the principles of the disclosure and including such departures from the present disclosure as come within known or customary practice within the art to which the disclosure pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the disclosure being indicated by the following claims.

Claims (13)

1. An image sensing module, characterized in that, the image sensing module includes:

a substrate having a first pixel region and a second pixel region;

the pixel layer is arranged on one side of the substrate and comprises a first pixel unit, a second pixel unit and a third pixel unit, the first pixel unit is arranged in the first pixel area and used for sensing and generating an imaging signal, the second pixel unit is arranged in the second pixel area and used for detecting a dark current signal, the third pixel unit is arranged in the second pixel area and used for sensing and generating a light sensing signal;

and the light shielding layer is arranged on one side of the pixel layer far away from the substrate and covers the second pixel unit.

2. The image sensing module of claim 1, wherein the second pixel region at least partially surrounds the first pixel region.

3. The image sensor module of claim 2, wherein the second pixel region comprises a first sub-pixel region and a second sub-pixel region, the first sub-pixel region at least partially surrounds the first pixel region, the second pixel unit is disposed in the first sub-pixel region, the second sub-pixel region is embedded in the first sub-pixel region, and the third pixel unit is disposed in the second sub-pixel region.

4. The image sensor module of claim 3, wherein the first sub-pixel region has one or more gaps, and each of the gaps has one of the second sub-pixel regions.

5. The image sensor module of claim 4, wherein the first sub-pixel region is a rectangular ring, one or more gaps are disposed on an inner side of the rectangular ring, and the second sub-pixel region is located at the gap.

6. The image sensing module of claim 5, wherein one of the second sub-pixel regions is disposed at a midpoint of each edge of the first sub-pixel region.

7. The image sensing module of claim 3, further comprising:

the first pixel region is provided with a first isolation groove at the edge of the orthographic projection region on the pixel layer, and the first shading strip is arranged in the first isolation groove;

and the second sub-pixel area is provided with a second isolation groove at the edge of the pixel layer orthographic projection area, and the second light-shielding strip is arranged in the second isolation groove.

8. The image sensing module of claim 1, wherein the substrate comprises:

a substrate;

the first pixel unit, the second pixel unit and the third pixel unit are arranged on one side, far away from the substrate, of the signal acquisition circuit layer.

9. The image sensing module of claim 8, wherein the signal acquisition circuit layer comprises:

the first acquisition unit is connected with the first pixel unit and is used for acquiring an imaging signal;

the second acquisition unit is connected with the second pixel unit and is used for acquiring dark current signals;

and the third acquisition unit is connected with the third pixel unit and is used for acquiring light sensation signals.

10. The image sensor module as claimed in claim 9, wherein the third collecting unit is turned on in response to the photo sense control signal every predetermined time to obtain the photo sense signal.

11. An electronic device, characterized in that the electronic device comprises an image sensing module according to any one of claims 1-10.

12. The electronic device of claim 11, wherein the electronic device further comprises:

the display panel is arranged on the light inlet side of the image sensing module, a light hole is formed in the display panel, and the image sensing module is opposite to the light hole.

13. The electronic device of claim 12, wherein the electronic device further comprises:

the isolation layer is arranged on the side wall of the light through hole, and the isolation layer is used for shielding the light of the display panel.

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