CN115020354A - 包括均被聚对二甲苯涂层覆盖的半导体管芯和载体的半导体装置 - Google Patents
包括均被聚对二甲苯涂层覆盖的半导体管芯和载体的半导体装置 Download PDFInfo
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- CN115020354A CN115020354A CN202210207512.XA CN202210207512A CN115020354A CN 115020354 A CN115020354 A CN 115020354A CN 202210207512 A CN202210207512 A CN 202210207512A CN 115020354 A CN115020354 A CN 115020354A
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Abstract
本文公开了一种半导体装置(10),其包括:包括凹陷(11A)的载体(11)、设置在所述凹陷(11A)中的半导体管芯(12)、以及覆盖所述半导体管芯(12)和所述载体(11)的表面的至少部分的聚对二甲苯涂层(13)。
Description
技术领域
本公开涉及半导体装置、半导体装置模块、用于制造半导体装置的方法、以及用于制造半导体装置模块的方法。
背景技术
在过去的几年中,已经进行了很多关于将有源半导体管芯嵌入PCB或封装载体系统中的活动。特定的挑战与中高压芯片载体子组件(例如MOSFET或IGBT装置)等的嵌入有关,因为必须解决处理、稳定性和离子保护方面的挑战。更具体地说,新的中高压芯片载体子组件需要在运输、处理和储存过程中保持稳定,由于MC穿透不足,它们需要被绝缘以抵抗源极-漏极和源极-栅极短路,它们需要受到保护以抵抗高电压引起的离子迁移,并且边缘端接需要保留全部功能,因为设计调整是不可行的。
可能的解决方案包括对安装在实际使用的铜管芯载体上的管芯进行模制封盖。这将导致具有模制封盖的“受保护”的芯片载体子组件和具有裸管芯的“未受保护”的芯片载体子组件之间的生产的分割。这与增加的封装成本相结合,可能是提高市场渗透率的阻碍因素。此外,尚不清楚这种方法是否与现有的处理步骤兼容。通过模制化合物不再能看到具有相应管芯焊盘的管芯在铜载体上的位置,这使得用于过孔钻孔的激光对准非常困难。此外,模制封盖的最小厚度将导致需要进行工艺开发。
发明内容
本公开的第一方面涉及一种半导体装置,其包括具有凹陷的载体、设置在凹陷中的半导体管芯以及覆盖半导体管芯和/或载体的表面的至少部分的聚对二甲苯涂层。
本公开的第二方面涉及一种半导体装置模块,其包括绝缘层和根据第一方面的半导体装置,所述半导体装置嵌入在所述绝缘层中。
本公开的第三方面涉及一种用于制造半导体装置的方法,该方法包括:提供包括凹陷的载体,提供半导体管芯并将半导体管芯设置在凹陷中,以及向载体和半导体管芯上施加聚对二甲苯涂层。
本公开的第四方面涉及一种用于制造半导体装置模块的方法,该方法包括:提供根据第三方面的方法制造的半导体装置,以及将半导体装置嵌入在绝缘层中。
附图说明
附图被包括以提供对实施例的进一步理解并且被并入并构成本说明书的部分。附图示出了实施例并且与描述一起用于解释实施例的原理。其他实施例和实施例的许多预期优点将容易理解,因为它们通过参考以下具体实施方式而变得更好理解。
附图的元件不必相对于彼此成比例。类似的附图标记表示对应的相似部分。
图1示出了根据第一方面的半导体装置的示例的示意性截面侧视图。
图2示出了根据第二方面的半导体装置模块的示例的示意性截面侧视图,其中集电极接触焊盘与延伸到模块的上主面和下主面的过孔连接器连接。
图3示出了根据第二方面的半导体装置模块的示例的示意性截面侧视图,其中发射极和集电极接触焊盘与延伸到模块的上主面的过孔连接器连接。
图4示出了用于制造半导体装置的方法的流程图的示例。
图5示出了用于制造半导体装置模块的方法的流程图的示例。
图6A至图6C示出了用于说明用于制造半导体装置的方法的示例的托盘的示意性截面侧视图表示。
图7A至图7C示出了用于说明用于制造半导体装置模块的方法的示例的示意性截面侧视图表示。
图8示出了聚对二甲苯的主链的化学式。
具体实施方式
在下面的具体实施方式中,参考了附图,这些附图形成了本说明书的一部分,并且在附图中通过例示的方式示出了可以实施本公开的具体实施例。在这方面,参考正在描述的(多个)图的取向使用方向性术语,例如“顶部”、“底部”、“前”、“后”、“前导”、“尾随”等。因为实施例的部件可以定位在多个不同的取向上,所以方向性术语用于说明的目的并且绝不是限制性的。应当理解,在不脱离本公开的范围的情况下,可以利用其他实施例并且可以进行结构或逻辑上的改变。因此,以下具体实施方式不应被理解为限制性意义,并且本公开的范围由所附权利要求限定。
应当理解,本文描述的各种示例性实施例的特征可以彼此组合,除非另有特别说明。
如在本说明书中使用的,术语“接合”、“附接”、“连接”、“耦合”和/或“电连接/电耦合”并不意味着元件或层必须直接接触一起;居间元件或层可以设置在分别是“接合”、“附接”、“连接”、“耦合”和/或“电连接/电耦合”的元件之间。然而,根据本公开,上述术语还可以任选地具有将元件或层直接接触在一起的特定含义,即,在分别是“接合”、“附接”、“连接”、“耦合”和/或“电连接/电耦合”的元件之间没有设置居间的元件或层。
此外,关于形成或位于表面“之上”的部分、元件或材料层使用的词语“之上”在本文中可以用于表示部分、元件或材料层“间接”位于(例如,放置于、形成于、沉积于等)隐含表面上,并且一个或多个附加部分、元件或层布置在隐含表面与所述部分、元件或材料层之间。然而,关于形成或位于表面“之上”的部分、元件或材料层使用的词语“之上”还可以任选地具有特定含义,即部分、元件或材料层“直接”位于(例如放置于、形成于,沉积于等)隐含表面上,例如与隐含表面直接接触。
图1示出了根据第一方面的半导体装置的示例。
如图1所示的半导体装置10包括具有凹陷11A的载体11、设置在凹陷11A中的半导体管芯12、以及覆盖半导体管芯12和载体11的表面的除了半导体管芯12和载体11之间的连接表面之外的所有部分的聚对二甲苯涂层13。
下面将通过图6A至图6C进一步解释可以如何制造如图1所示的半导体装置。还将示出可以如何制造其中聚对二甲苯涂层13几乎覆盖半导体管芯12和载体11的暴露表面的所有部分的半导体装置。在载体11的下表面上存在未被聚对二甲苯层13覆盖的部分,因为在沉积聚对二甲苯层13时载体11没有悬在托盘中,即聚对二甲苯层13不会覆盖载体11和托盘之间的接触点。
参考图8,聚对二甲苯是聚合物的通用名称,其主链由通过1,2-乙二醇桥-CH2-CH2-连接的对苯二酰环-C6H4-组成。可以由对二甲苯H 2C=C 6H4=CH2聚合而获得。
与聚对二甲苯C的C-C键相比,聚对二甲苯以各种改性形式出现,尤其是聚对二甲苯F的优越的热稳定性归因于其脂肪族C-F键。聚对二甲苯F具有脂肪族-CH2-化学性质,因此具有相对较差的氧化和UV稳定性。同时,聚对二甲苯F表现出比聚对二甲苯C更高的涂层密度和显著更高的穿透力,尽管它的折射率略低。
聚对二甲苯F在100,000小时期间的连续服务温度为200℃,而聚对二甲苯C的连续服务温度为80℃。因此,如果根据要求80℃就足够了,聚对二甲苯C将是优选材料,因为工艺成本将显著降低。例如,聚对二甲苯F的沉积速率为每小时2μm,而聚对二甲苯C的沉积速率要快得多。
通过在探测后建立聚对二甲苯涂层,“受保护”和“未受保护”装置的生产链保持平等。如果客户选择订购这些功能,可以添加聚对二甲苯作为对芯片载体子组件的升级,以允许更好的机械、环境和短路保护。通过在测试后对管芯进行涂覆,处理过程中不需要任何工艺工作,也不需要专门生产这些芯片载体子组件,所有芯片特征都可以通过聚对二甲苯层看到。涂覆工艺本身是非侵入性的,允许在测试后进行涂覆。
聚对二甲苯的主要优点是:
·由于高达10μm厚的聚合物层(与亚μm厚的ALD(原子层沉积)层相反)所带来的划痕保护。·聚对二甲苯已被证明能够用作离子阻挡部,允许制造商降低对FR4材料或其他PCB材料的质量要求,特别是对那些包含环氧树脂材料和玻璃纤维的材料的质量要求。
·聚对二甲苯涂层中不需要图案化或保护,因为芯片嵌入中的过孔钻孔也会在聚对二甲苯中出现热击穿。
·利用低导热率聚对二甲苯涂覆的侧壁集中于热路径,增加了到热过孔中的热量流动,并减少了到绝缘层(特别是FR4层)中的热量流动。
·聚对二甲苯以高达200V/μm的击穿电压进行隔离。
·聚对二甲苯因其分子结构而对化学分解是鲁棒的。
·聚对二甲苯的介电常数接近FR4或其他典型的PCB材料。
例如,可以选择热导率在从0.05W/mK到2W/mK、特别是在0.1W/mK左右的聚对二甲苯材料。
根据图1的半导体装置的示例,聚对二甲苯涂层13包括在从0.5μm到10μm范围内的厚度,而该范围的下限也可以是1μm、2μm、3μm或4μm,并且该范围的上限也可以是9μm、8μm、7μm或6μm。
半导体管芯12可以是半导体晶体管管芯、功率半导体晶体管管芯、垂直晶体管管芯、(功率)IGBT管芯、(功率)MOSFET管芯或晶闸管管芯中的一个或多个。在任何种类的垂直晶体管管芯的情况下,半导体装置10包括在第一上主面上的第一接触焊盘和在与第一主面相对的第二下主面上的第二接触焊盘。除此之外,半导体管芯12可以通过例如扩散焊接而附接到载体11。
在如图1所示的示例中,载体11包括金属块,特别是Cu块,类似引线框架的部分,并且凹陷区域11A可以通过例如压印工艺形成。
图2示出了半导体装置模块的示例的示意性截面侧视图。
如图2所示的半导体装置模块100包括绝缘层14,以及与结合图1示出并描述的半导体装置10类似的半导体装置10,其中半导体装置10嵌入在绝缘层14中。将结合图7示出并描述半导体装置模块100的制造方法。
绝缘层14的材料可以包括FR4,其通常用作半导体工业中的印刷电路板(PCB)的材料。也可以使用其他典型的PCB材料,特别是那些包含环氧树脂材料和玻璃纤维的材料,例如FR3或FR5、或BT环氧树脂。
除了聚对二甲苯涂层13的部分被去除的事实之外,图2所示的半导体装置模块100包括类似于图1所示的半导体装置10的半导体装置10。如图2所示的半导体管芯12是垂直半导体晶体管管芯12,特别是IGBT管芯,具有在第一上主面上的第一接触焊盘和在第二下主面上的第二接触焊盘。第一接触焊盘可以是IGBT管芯的发射极接触焊盘并且第二接触焊盘可以是IGBT管芯的集电极接触焊盘。
在将绝缘层14施加到半导体装置10之后,到半导体管芯12的接触焊盘的电过孔连接器必须形成到绝缘层14中,这将在稍后示出。在第一步骤中,在绝缘层14中形成延伸到接触焊盘的通孔,然后用金属材料(如Cu)填充通孔直到绝缘层14的表面。这样,形成过孔连接器15至17,其中第一过孔连接器15与发射极接触焊盘连接,第二过孔连接器16从上方与载体11连接并因此与集电极接触焊盘连接,并且第三过孔连接器17从下方与载体11连接并因此与集电极接触焊盘连接。利用金属材料的填充可以通过电化学镀覆来执行。
图3示出了半导体装置模块的另一示例的示意性截面侧视图。
图3的半导体装置模块200与图2的半导体装置模块100的不同之处仅在于,没有制造图2的第三过孔连接器17。因此,在绝缘层24中,形成过孔连接器25和26,其中第一过孔连接器25与发射极接触焊盘连接,第二过孔连接器26从上方与载体11连接,并且因此与集电极接触焊盘连接。结果,半导体装置模块200的外部电触点仅设置在模块200的上主面上。
应该提及的是,半导体装置模块的进一步变体是可能的,其中不制造图2的半导体装置模块200的第二过孔连接器16。
图4示出了用于制造半导体装置的方法的流程图的示例。
图4的方法300包括提供包括凹陷的载体(310),提供半导体管芯并将半导体管芯设置在凹陷中(320),以及将聚对二甲苯涂层施加到载体和半导体管芯上(320)。
方法300的其他实施例可以通过添加上面结合根据第一方面的半导体装置描述的方面或特征来形成。
图5示出了用于制造半导体装置模块的方法的流程图的示例。
图5的方法400包括提供根据图4制造的半导体装置(410),以及将半导体装置嵌入在绝缘层中(420)。
方法400的其他实施例可以通过添加上面结合根据第二方面的半导体装置模块描述的方面或特征来形成。
图6A至图6C示出了用于制造半导体装置的方法的示例。
根据图6A,在第一步骤中,提供了多个组件60,组件60均由包括凹陷的载体61和设置在凹陷中的半导体管芯62组成。组件60中的每一个放置在标准JEDEC托盘70的隔室70A之一中,该标准JEDEC托盘70包括布置成矩阵的多个隔室70A。两个托盘70以堆叠关系布置为一个在另一个上。组件60可以松散地放置在隔室70A中,而无需牢固地附接到隔室70A的底部。组件60没有悬在托盘70中,因此在组件60的下表面和托盘70的表面之间存在接触点或区域。
仅如图6B所示,托盘70被放置在沉积设备中,以便将聚对二甲苯沉积到组件60上。图6B中的椭圆形区域指示在沉积设备中生成的热分解的聚对二甲苯的气氛。由于组件60仅松散地搁置在隔室70A的底部上,聚对二甲苯可能在载体61的最下表面下方缓慢移动,并且因此也可以沉积在该表面上。理论上,聚对二甲苯也可以在一定程度上沉积到半导体管芯62的下表面上,这取决于半导体管芯62如何附接到载体61。
聚对二甲苯沉积工艺可以包括在第一升高温度下(例如在大约150℃和1.0托)蒸发固体二聚体。然后通过在高于第一升高温度的第二升高温度下(例如在约690℃和0.5托)在不存在氧气的情况下高温分解而分解二聚体,以产生单体对二甲苯。在低于第一和第二升高温度的温度下(例如在约25℃和0.1托)将单体对二甲苯注入到包括半导体装置的沉积室中,使得单体对二甲苯在组件上聚合。这只是聚对二甲苯涂覆工艺的一个示例,并且任何其他聚对二甲苯沉积工艺都可以用于用聚对二甲苯涂覆组件60。
根据图6C,将聚对二甲苯涂层65沉积到组件60和托盘70上。然后可以将聚对二甲苯涂覆的组件60中的每一个从设备中取出,并且然后可以对每一个所述组件60进行进一步处理,如下面进一步所示。
图7A至图7D示出了用于说明用于制造半导体装置模块的方法的示例的示意性截面侧视图表示。
图7A示出了根据图6制造的并且已经结合图1描述的半导体装置10之一。
根据图7B,绝缘层80已经被施加到半导体装置10,使得半导体装置10被完全嵌入在绝缘层80内。绝缘层80的材料可以是FR4。
根据图7C,开口80A通过对绝缘层80的空间选择性去除而形成到绝缘层80中。开口80A形成在绝缘层80的上主面和下主面中,使得它们从上方延伸到半导体管芯12和载体11,并且从下方延伸到载体11。可以例如通过如图7C中由箭头所指示的激光烧蚀来执行绝缘层80的选择性去除。
根据图7D,然后用金属材料(特别是铜)填充开口80A。填充可以通过电镀执行。结果,获得了如图2所示的包括电连接器15、16和17的半导体装置模块。
示例
下面描述本公开的具体示例。
示例1是一种半导体装置,其包括具有凹陷的载体、设置在凹陷中的半导体管芯、以及覆盖半导体管芯和载体的表面的至少部分的聚对二甲苯涂层。
示例2是根据示例1的半导体装置,其中聚对二甲苯涂层覆盖半导体管芯和载体的表面的所有部分。
示例3是根据示例1的半导体装置,其中聚对二甲苯涂层覆盖半导体管芯和载体的表面的除了半导体管芯和载体之间的连接表面之外的所有部分。
示例4是根据前述示例中任一项的半导体装置,其中聚对二甲苯涂层包括聚对二甲苯F或聚对二甲苯C中的一种。
示例5是根据前述示例中任一项的半导体装置,其中聚对二甲苯涂层包括在从0.5μm到10μm的范围内的厚度。
示例6是根据前述示例中任一项的半导体装置,其中半导体管芯是半导体晶体管管芯、功率半导体晶体管管芯、功率IGBT管芯、功率MOSFET管芯或晶闸管管芯中的一个或多个。
示例7是根据前述示例中任一项的半导体装置,其中半导体管芯包括第一上主面和与第一主面相对的第二下主面,以及第一上主面上的第一接触焊盘和第二下主面上的第二接触焊盘。
示例8是一种半导体装置模块,包括绝缘层和根据前述示例中任一项的半导体装置,所述半导体装置嵌入在绝缘层中。
示例9是根据示例8的半导体装置模块,其中载体包括第一上主面、与第一上主面相对的第二下主面、连接第一和第二主面的侧面,凹陷形成在第一上主面中并且包括底面和与底面连接的侧面,半导体管芯包括第一主面、与第一主面相对的第二主面、以及连接第一和第二主面的侧面,聚对二甲苯涂层覆盖半导体管芯的侧面、凹陷的底面的一部分、凹陷的侧面和载体的侧面。
示例10是根据示例8或9的半导体装置模块,其中绝缘层包括包含环氧树脂材料和玻璃纤维的材料、FR4材料、FR3材料、FR5材料、或BT环氧树脂材料中的一种或多种。
示例11是一种用于制造半导体装置的方法,该方法包括:提供包括凹陷的载体,提供半导体管芯并将半导体管芯设置在凹陷中,以及将聚对二甲苯涂层施加到载体和半导体管芯上。
示例12是根据示例11的方法,其中聚对二甲苯涂层是通过物理气相沉积来沉积的。
示例13是一种用于制造半导体装置模块的方法,该方法包括提供根据示例11或12之一制造的半导体装置,以及将半导体装置嵌入在绝缘层中。
示例14是根据示例13的方法,还包括从半导体管芯的接触焊盘上方去除聚对二甲苯层的一部分,以及将金属材料施加到接触焊盘。
示例15是根据示例14的方法,其中聚对二甲苯层的一部分是通过激光烧蚀而去除的。
此外,虽然可能已经相对于若干实施方式中的仅一个实施方式公开了本公开的实施例的特定特征或方面,但这种特征或方面可以与其他实施方式的一个或多个其他特征或方面组合,这对于任何给定的或特定的应用而言可能是需要且有利的。此外,在具体实施方式或权利要求中使用术语“包括”、“具有”、“带有”或其其他变体的程度上,这种术语旨在以类似于术语“包括”的方式表示包括性。此外,应该理解,本公开的实施例可以在分立电路、部分集成电路或完全集成电路或编程装置中实施。此外,术语“示例性”仅意在作为示例,而非最佳或最优。还应当理解,为了简单和易于理解的目的,本文描述的特征和/或元件以相对于彼此的特定尺寸来说明,并且实际尺寸可能与本文所示的有很大不同。
尽管本文已经说明并描述了具体实施例,但是本领域普通技术人员将理解,在不脱离本公开的范围的情况下,可以用各种替代和/或等效实施方式替代所示出和描述的具体实施例。本申请旨在涵盖本文讨论的具体实施例的任何改编或变化。因此,本公开旨在仅由权利要求及其等同物来限制。
Claims (15)
1.一种半导体装置(10),包括:
包括凹陷(11A)的载体(11);
设置在所述凹陷(11A)中的半导体管芯(12);以及
聚对二甲苯涂层(13),其覆盖所述半导体管芯(12)和/或所述载体(11)的表面的至少部分。
2.根据权利要求1所述的半导体装置(10),其中:
所述聚对二甲苯涂层(13)覆盖所述半导体管芯(12)和所述载体(11)的所述表面的所有部分。
3.根据权利要求1所述的半导体装置(10),其中:
所述聚对二甲苯涂层(13)覆盖所述半导体管芯(12)和所述载体(11)的所述表面的除了所述半导体管芯(12)和所述载体(11)之间的连接表面之外的所有部分。
4.根据前述权利要求中任一项所述的半导体装置(10),其中:
所述聚对二甲苯涂层(13)包括聚对二甲苯F或聚对二甲苯C中的一种。
5.根据前述权利要求中任一项所述的半导体装置(10),其中:
所述聚对二甲苯涂层(13)包括在从0.5μm至10μm的范围内的厚度。
6.根据前述权利要求中任一项所述的半导体装置(10),其中:
所述半导体管芯(12)是半导体晶体管管芯、功率半导体晶体管管芯、功率IGBT管芯、功率MOSFET管芯或晶闸管管芯中的一个或多个。
7.根据前述权利要求中任一项所述的半导体装置(10),其中:
所述半导体管芯(12)包括第一上主面和与所述第一上主面相对的第二下主面,以及
所述第一上主面上的第一接触焊盘和所述第二下主面上的第二接触焊盘。
8.一种半导体装置模块(100),包括:
绝缘层(14);以及
根据前述权利要求中任一项所述的半导体装置(10),所述半导体装置(10)嵌入在所述绝缘层(14)中。
9.根据权利要求8所述的半导体装置模块(100),其中:
所述载体(11)包括第一上主面、与所述第一上主面相对的第二下主面、连接所述第一上主面和所述第二下主面的侧面;
所述凹陷(11A)形成在所述第一上主面中,并且包括底面和与所述底面相连的侧面;
所述半导体管芯(12)包括第一主面、与所述第一主面相对的第二主面、以及连接所述第一主面和所述第二主面的侧面;
所述聚对二甲苯涂层(13)覆盖所述半导体管芯(12)的所述侧面、所述凹陷(11A)的所述底面的一部分、所述凹陷(11A)的所述侧面和所述载体(11)的所述侧面。
10.根据权利要求8或9所述的半导体装置模块(100),其中:
所述绝缘层(14)包括以下中的一种或多种:包含环氧树脂材料和玻璃纤维的材料、FR4材料、FR3材料、FR5材料或BT环氧树脂材料。
11.一种用于制造半导体装置的方法(300),所述方法包括:
提供包括凹陷的载体(310);
提供半导体管芯并将所述半导体管芯设置在所述凹陷中(320);以及
将聚对二甲苯涂层施加到所述载体和所述半导体管芯上(330)。
12.根据权利要求11所述的方法(300),其中:
所述聚对二甲苯涂层是通过物理气相沉积而沉积的。
13.一种用于制造半导体装置模块的方法(400),所述方法包括:
提供根据权利要求11或12之一制造的半导体装置(410);以及
将所述半导体装置嵌入在绝缘层中(420)。
14.根据权利要求13所述的方法(400),还包括:
从所述半导体管芯的接触焊盘上方去除所述聚对二甲苯层的一部分,以及
将金属材料施加到所述接触焊盘。
15.根据权利要求14所述的方法(400),其中:
所述聚对二甲苯层的所述部分是通过激光烧蚀而去除的。
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