CN115020206A - Manufacturing method for thinning back of silicon carbide wafer - Google Patents
Manufacturing method for thinning back of silicon carbide wafer Download PDFInfo
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- CN115020206A CN115020206A CN202210835423.XA CN202210835423A CN115020206A CN 115020206 A CN115020206 A CN 115020206A CN 202210835423 A CN202210835423 A CN 202210835423A CN 115020206 A CN115020206 A CN 115020206A
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- Prior art keywords
- silicon carbide
- adopting
- carbide wafer
- layer
- wafer
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 35
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 238000000034 method Methods 0.000 claims abstract description 38
- 238000002347 injection Methods 0.000 claims abstract description 17
- 239000007924 injection Substances 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 14
- 238000005224 laser annealing Methods 0.000 claims abstract description 9
- 150000002500 ions Chemical class 0.000 claims abstract description 5
- 230000001590 oxidative effect Effects 0.000 claims abstract description 4
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 abstract description 10
- 229910002091 carbon monoxide Inorganic materials 0.000 abstract description 10
- 230000003647 oxidation Effects 0.000 abstract description 8
- 238000007254 oxidation reaction Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 6
- 239000007789 gas Substances 0.000 abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- 239000001301 oxygen Substances 0.000 abstract description 5
- -1 oxygen ions Chemical class 0.000 abstract description 5
- 238000005468 ion implantation Methods 0.000 abstract description 4
- 238000002513 implantation Methods 0.000 abstract description 2
- 238000000227 grinding Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Inorganic Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a manufacturing method for thinning the back of a silicon carbide wafer, which comprises the following steps: (1) forming a pre-etching injection layer on the back surface of the SiC wafer which is processed by the front surface process by adopting an ion injection process; (2) oxidizing the pre-etched injection layer by adopting a laser annealing process to form an oxide layer; (3) and removing the oxide layer on the back of the whole silicon carbide wafer by adopting an etching process. According to the invention, an ion implantation process is adopted on the back of the whole silicon carbide wafer to form a pre-etched implantation layer, then the implanted oxygen ions are combined with the silicon carbide material through a laser annealing process to respectively form an oxidation layer and carbon monoxide gas, the carbon monoxide is volatilized in a gaseous form, and finally the oxidation layer is removed by adopting an etching process, so that the silicon carbide wafer with low cost is thinned.
Description
Technical Field
The invention belongs to the technical field of wide bandgap silicon carbide semiconductor wafer processes, and particularly relates to a manufacturing method for thinning the back of a silicon carbide wafer.
Background
In order to reduce the ratio of the body resistance to the on-resistance of the silicon carbide power device, after the front wafer of the device is usually manufactured, special grinding equipment is required to be used to thin the back of the wafer under the drive of a high-power motor through the principle of rotary friction. However, silicon carbide is one of the hardest materials known at present, and the grinding method for thinning brings a great amount of electric energy loss and grinding wheel loss, which causes the cost to rise.
This patent forms the pre-etch injection layer through adopting the ion implantation technology at the back of whole carborundum wafer, then makes the oxygen ion of injection and carborundum material take place to combine through laser annealing process, forms oxide layer and carbon monoxide gas respectively, and carbon monoxide volatilizes with gaseous form, adopts the etching technology to get rid of the oxide layer at last, and then realizes the carborundum wafer attenuate of low cost.
Disclosure of Invention
The invention aims to provide a manufacturing method for thinning the back of a silicon carbide wafer, which is characterized in that an ion injection process is adopted on the back of the whole silicon carbide wafer to form a pre-etched injection layer, then the injected oxygen ions are combined with a silicon carbide material through a laser annealing process to respectively form an oxidation layer and carbon monoxide gas, the carbon monoxide volatilizes in a gaseous form, and finally the oxidation layer is removed through an etching process, so that the silicon carbide wafer with low cost is thinned.
In order to achieve the above object, the present invention provides a method for thinning the back surface of a silicon carbide wafer, comprising the steps of:
(1) forming a pre-etching injection layer on the back surface of the SiC wafer which is processed by the front surface process by adopting an ion injection process;
(2) oxidizing the pre-etched injection layer by adopting a laser annealing process to form an oxide layer;
(3) and removing the oxide layer on the back of the whole silicon carbide wafer by adopting an etching process.
Further, the doping concentration of oxygen atoms in the step (1) is 1e12cm -3 ～1e16cm -3 。
The method is characterized in that an ion implantation process is adopted on the back of the whole silicon carbide wafer to form a pre-etching injection layer, then the injected oxygen ions are combined with the silicon carbide material through a laser annealing process to form an oxidation layer and carbon monoxide gas respectively, the carbon monoxide volatilizes in a gaseous form, and finally the oxidation layer is removed through an etching process, so that the silicon carbide wafer with low cost is thinned.
Drawings
Fig. 1 is a simplified process flow diagram of a method for thinning the back side of a sic wafer according to an embodiment of the present invention.
Detailed Description
The technical solution of the present invention will be fully described with reference to the accompanying drawings and specific embodiments.
The simplified process flow diagram of the manufacturing method for thinning the back of the silicon carbide wafer provided by the invention is shown in fig. 1, and the method comprises the following steps:
s1: forming a pre-etching injection layer on the back surface of the SiC wafer processed by the front surface process by adopting an ion injection process;
s2: oxidizing the pre-etched injection layer by adopting a laser annealing process to form an oxide layer;
s3: and removing the oxide layer on the back of the whole silicon carbide wafer by adopting an etching process.
In summary, in the manufacturing method for thinning the back surface of the silicon carbide wafer according to the embodiment of the present invention, the ion implantation process is adopted on the back surface of the whole silicon carbide wafer to form the pre-etched implantation layer, then the laser annealing process is adopted to combine the implanted oxygen ions with the silicon carbide material to form the oxidation layer and the carbon monoxide gas respectively, the carbon monoxide volatilizes in a gaseous form, and finally the etching process is adopted to remove the oxidation layer, so that the low-cost silicon carbide wafer thinning is realized.
The above-described embodiment represents only one preferred embodiment of the present invention, and is not intended to limit the present invention. All the modifications based on the embodiments and the idea of the invention are within the protection scope of the invention.
Claims (2)
1. A manufacturing method for thinning the back of a silicon carbide wafer comprises the following steps:
(1) forming a pre-etching injection layer on the back surface of the SiC wafer which is processed by the front surface process by adopting an ion injection process;
(2) oxidizing the pre-etched injection layer by adopting a laser annealing process to form an oxide layer;
(3) and removing the oxide layer on the back of the whole silicon carbide wafer by adopting an etching process.
2. The method according to claim 1, wherein the doping concentration of oxygen atoms in step (1) is 1e12cm -3 ～1e16cm -3 。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210835423.XA CN115020206A (en) | 2022-07-18 | 2022-07-18 | Manufacturing method for thinning back of silicon carbide wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210835423.XA CN115020206A (en) | 2022-07-18 | 2022-07-18 | Manufacturing method for thinning back of silicon carbide wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115020206A true CN115020206A (en) | 2022-09-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210835423.XA Pending CN115020206A (en) | 2022-07-18 | 2022-07-18 | Manufacturing method for thinning back of silicon carbide wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115020206A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115938927A (en) * | 2022-12-28 | 2023-04-07 | 芯钛科半导体设备(上海)有限公司 | Ultrathin wafer thinning process |
| CN116092931A (en) * | 2023-02-21 | 2023-05-09 | 浙江萃锦半导体有限公司 | Laser thinning silicon carbide wafer back surface process |
-
2022
- 2022-07-18 CN CN202210835423.XA patent/CN115020206A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115938927A (en) * | 2022-12-28 | 2023-04-07 | 芯钛科半导体设备(上海)有限公司 | Ultrathin wafer thinning process |
| CN115938927B (en) * | 2022-12-28 | 2024-02-09 | 芯钛科半导体设备(上海)有限公司 | Ultrathin wafer thinning process |
| CN116092931A (en) * | 2023-02-21 | 2023-05-09 | 浙江萃锦半导体有限公司 | Laser thinning silicon carbide wafer back surface process |
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