CN115020197A - Method for cleaning gallium arsenide wafer and auxiliary cleaning device thereof - Google Patents

Method for cleaning gallium arsenide wafer and auxiliary cleaning device thereof Download PDF

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Publication number
CN115020197A
CN115020197A CN202210672659.6A CN202210672659A CN115020197A CN 115020197 A CN115020197 A CN 115020197A CN 202210672659 A CN202210672659 A CN 202210672659A CN 115020197 A CN115020197 A CN 115020197A
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wafer
time
cleaning
soaking
gallium arsenide
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吴瑶
曾贵州
王金灵
周铁军
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Guangdong Vital Micro Electronics Technology Co Ltd
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Guangdong Vital Micro Electronics Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The invention relates to the technical field of semiconductor processing, and discloses a method for cleaning a gallium arsenide wafer and a cleaning auxiliary device thereof, which comprises the steps of washing the wafer for the first time; soaking the wafer for the first time; rinsing the wafer for the second time; soaking the wafer for the second time; rinsing the wafer for the third time; and washing the surface of the wafer soaked for the second time by using pure water, and placing the wafer in a water tank after washing to finish the washing process. The invention has higher wafer cleaning efficiency, cleaner cleaning and concise and quick whole cleaning process.

Description

Method for cleaning gallium arsenide wafer and auxiliary cleaning device thereof
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to a method for cleaning a gallium arsenide wafer and a cleaning auxiliary device thereof.
Background
Gallium arsenide (GaAs) is an inorganic compound, can exist stably in the air at the temperature of less than 600 ℃, is a gray black solid in appearance, has the melting point of 1238 ℃, the density of 5.31g/cm3, the forbidden band width of 1.424e and the relative dielectric constant of 13.18; gallium arsenide is attacked by oxidizing acids and belongs to group iii-v compound semiconductors, and its structure is zinc blende type lattice structure.
Gallium arsenide is cut into slices from a cylinder, and slurry is driven to cut and cool by a high-speed steel wire in a plurality of slicing modes. Under the optimization of the method, diamond wire surface is plated with emery and other high-hardness materials, and the effects of cooling, defoaming and the like of oil-based cutting fluid are utilized. The processing time and the processing material cost are shortened, but after slicing is finished, oily cutting cooling liquid and other particle substances are adhered to the surface of the wafer, the wafer is difficult to clean by the existing cleaning method, and the processing of the next procedure is easily influenced; and the cleaning efficiency is low, and the whole production and processing process is influenced.
Disclosure of Invention
The invention aims to provide a method for cleaning a gallium arsenide wafer and a cleaning auxiliary device thereof, which have higher wafer cleaning efficiency, are cleaner to clean, and are concise and quick in the whole cleaning process.
In order to solve the above technical problem, the present invention provides a method for cleaning a gallium arsenide wafer, comprising:
rinsing the wafer for the first time; loading the sliced wafer into a clamping plug, and washing the surface of the wafer by using pure water, wherein the clamping plug is obliquely washed left and right;
soaking the wafer for the first time; statically soaking the clamped plug which is washed for the first time in a first washing auxiliary device filled with washing liquid, and keeping the clamped plug inclined towards one direction; after soaking for a preset time, keeping the clamping plug inclined towards the other direction, and soaking for a preset time;
rinsing the wafer for the second time; washing the surface of the wafer soaked for the first time by pure water, wherein the clamping plug is obliquely washed left and right;
soaking the wafer for the second time; statically soaking the clamped plug which is washed for the second time in a second washing auxiliary device filled with corrosive liquid, and keeping the clamped plug inclined towards one direction; after soaking for a preset time, keeping the clamping plug inclined towards the other direction, and soaking for a preset time;
rinsing the wafer for the third time; and washing the surface of the wafer soaked for the second time by using pure water, and then placing the wafer in a water tank to finish the cleaning process.
The method for cleaning the gallium arsenide wafer at least has the following beneficial effects:
1. the invention adopts the blocking plug to load the wafers in batches, can realize the batch cleaning of the wafers, and in the cleaning process, the wafers are uniformly inclined by inclining the blocking plug, so that the front and back surfaces of the wafers can be cleaned, the cleaning degree and the cleaning speed of the wafers are ensured, and one side of the wafers is prevented from clinging to the blocking plug wall and being incapable of being cleaned;
2. washing the wafer for 3 times, washing stains which are easy to clean on the wafer for the first time, washing stains which are loosened due to soaking of cleaning liquid on the wafer for the second time, washing residual corrosive liquid on the wafer and the stains which are loosened due to soaking of the corrosive liquid for the third time, avoiding the stains from being brought to the next cleaning procedure by the wafer, and simultaneously ensuring the cleanliness of the wafer;
3. soaking in two stages in each soaking process, namely inclining the clamping plug in two directions respectively to enable the front and back surfaces of the wafer to be in the same direction, so that stain particles of the wafer are prevented from falling onto the adjacent wafer, and one side of the wafer is prevented from clinging to the wall of the clamping plug during soaking;
4. soaking twice, namely soaking with cleaning solution for the first time, separating dirt from the crystal surface by the cleaning solution and suspending the dirt in a medium, soaking with corrosive solution for the second time, corroding the crystal surface by the corrosive solution and cleaning surface stains.
In some embodiments of the present invention, the time for rinsing the wafer surface with pure water is 20 to 30 seconds.
In some embodiments of the present invention, the predetermined time for soaking the wafer for the first time is 20 to 30 seconds, and the total time for soaking the wafer for the first time is 40 to 60 seconds.
In some embodiments of the present invention, the cleaning liquid in the first cleaning auxiliary device includes a weak base solution, a zwitterionic surfactant and pure water, and the volume ratio of the weak base solution to the zwitterionic surfactant to the pure water is 3-5: 1-2: 90-120 parts.
In some embodiments of the invention, the weak base solution is at least one of ammonia, ammonium hydroxide, sodium acetate, sodium carbonate, and sodium bicarbonate; the zwitterionic surfactant is at least one of lecithin surfactant, amino acid surfactant and betaine surfactant.
In some embodiments of the present invention, the predetermined time for soaking the wafer for the second time is 30 to 60 seconds, and the total time for soaking the wafer for the second time is 60 to 120 seconds.
In some embodiments of the present invention, the etching solution in the second cleaning auxiliary device is ammonium hydroxide, hydrogen peroxide and pure water, and the volume ratio of the ammonium hydroxide to the hydrogen peroxide to the pure water is 2-3: 5-6: 90 to 100.
In order to solve the above problem, the present invention further provides an auxiliary device for cleaning a gallium arsenide wafer, which is used for assisting the method for cleaning the gallium arsenide wafer according to any one of the above embodiments, and the auxiliary device comprises a box body, wherein a carrying table is arranged inside the box body, and a vertical cross section of the carrying table is in a triangular structure.
In some embodiments of the invention, the carrier is hollow and has a lattice structure.
In some embodiments of the present invention, the carrier stage is provided with a plurality of carrying positions for carrying the card plugs.
The cleaning auxiliary device according to the invention has at least the following advantages:
through setting up clearance auxiliary device, can place the card stopper and soak in clearance auxiliary device, clearance auxiliary device's bottom surface is provided with the plummer, and the card stopper can directly be placed and soak on the plummer, and the section of plummer is the triangle-shaped structure simultaneously, inclines to both sides promptly, can make things convenient for the slope of card stopper to soak, also makes things convenient for standing of wafer and soaks, makes wafer surface fully contact washing liquid or corrosive liquid to and reinforcing clearance effect.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
FIG. 1 is a flow chart of a method for cleaning a GaAs wafer according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a cleaning assisting device provided in an embodiment of the present invention;
FIG. 3 is a schematic view of a structure of the card plug provided by the embodiment of the present invention;
FIG. 4 is a schematic view of a structure in which a card plug provided by an embodiment of the present invention is inclined in one direction;
FIG. 5 is a schematic view of a structure in which the card plug is inclined in another direction according to an embodiment of the present invention;
fig. 6 is a test point of a wafer according to an embodiment of the present invention.
Reference numerals:
1. a box body; 2. a bearing table; 3. a bearing position; 4. blocking; 5. a wafer.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments obtained by a person of ordinary skill in the art based on the embodiments in the present application without making any creative effort belong to the protection scope of the present application.
In the description of the present application, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a particular orientation, be constructed in a particular orientation, and be operated, and thus should not be construed as limiting the present application.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
The cleaning method of the gallium arsenide wafer of the present invention is described with reference to fig. 1, and is best suited for cleaning the gallium arsenide wafer immediately after dicing; the method can also be used after the wafer is sliced for a period of time, but after the wafer is sliced for a period of time, the cleaning effect is easily affected after the dirt on the surface of the wafer is dried. The following describes a method for cleaning a gallium arsenide wafer by using a specific example.
Referring to fig. 1, 3, 4 and 5, a method for cleaning a gaas wafer 5 according to a preferred embodiment of the present invention includes a first rinsing of the wafer 5; loading the sliced wafer 5 into the chuck plug 4, and washing the surface of the wafer 5 by using pure water, wherein the chuck plug 4 is obliquely washed left and right;
soaking the wafer 5 for the first time; statically soaking the jamming 4 which is washed for the first time in a first washing auxiliary device filled with washing liquid, and keeping the jamming 4 inclined towards one direction; after soaking for a preset time, keeping the clamping plug 4 inclined towards the other direction, and soaking for a preset time;
rinsing the wafer 5 for the second time; rinsing the surface of the wafer 5 soaked for the first time by pure water, wherein the chuck 4 is obliquely rinsed from side to side;
soaking the wafer 5 for the second time; statically soaking the blocked plug 4 which is washed for the second time in a second washing auxiliary device filled with corrosive liquid, and keeping the blocked plug 4 inclined towards one direction; after soaking for a preset time, keeping the clamping plug 4 inclined towards the other direction, and soaking for a preset time;
rinsing the wafer 5 for the third time; and washing the surface of the wafer soaked for the second time by using pure water, and then placing the wafer in a water tank to finish the cleaning process.
In summary, the method for cleaning the gallium arsenide wafer 5 according to the preferred embodiment of the present invention has at least the following advantages:
1. the invention adopts the clamping plug 4 to load the wafers 5 in batches, can realize the batch cleaning of the wafers 5, and in the cleaning process, the wafers 5 are uniformly inclined by inclining the clamping plug 4, the front and back surfaces of the wafers 5 can be cleaned, the cleaning degree and the cleaning speed of the wafers 5 are ensured, and one side of the wafers 5 is prevented from clinging to the wall of the clamping plug 4 and being incapable of being cleaned;
2. washing the wafer 5 for 3 times, washing stains which are easy to clean on the wafer 5 for the first time, washing stains which are loosened due to soaking of cleaning liquid on the wafer 5 for the second time, washing residual corrosive liquid and the stains which are loosened due to soaking of the corrosive liquid on the wafer 5 for the third time, avoiding the stains from being brought to the next cleaning procedure by the wafer 5, and simultaneously ensuring the cleanliness of the wafer 5;
3. soaking in two stages in each soaking process, namely inclining the clamping plug 4 in two directions respectively to enable the front and back surfaces of the wafer 5 to be in the same direction, so that stain particles of the wafer 5 are prevented from falling onto the adjacent wafer 5, and one side of the wafer 5 is prevented from clinging to the wall of the clamping plug 4 during soaking;
4. soaking twice, namely soaking with cleaning solution for the first time, separating dirt from the crystal surface through the cleaning solution and suspending in a medium, and soaking with corrosive solution for the second time, corroding the crystal surface through the corrosive solution and cleaning surface stains.
Further, the time for rinsing the surface of the wafer 5 with pure water is 20 to 30 seconds. The time for washing the wafer 5 by the pure water is not too long, usually 20-30 seconds, because the pure water can only wash stains on the surface of the wafer 5, which are easy to wash and fall off, the time is longer, the cleanliness of the wafer 5 is not greatly influenced, the cleaning efficiency is easy to influence, but the cleaning time is too short, and the front and back surfaces of the wafer 5 are not easy to wash integrally.
In some embodiments of the present invention, the predetermined time for the first soaking of the wafer 5 is 20 to 30 seconds, and the total time for the first soaking of the wafer 5 is 40 to 60 seconds.
In some embodiments of the present invention, the cleaning liquid in the first cleaning auxiliary device includes a weak base solution, a zwitterionic surfactant and pure water, and the volume ratio of the weak base solution to the zwitterionic surfactant to the pure water is 3-5: 1-2: 90-120 parts.
Specifically, the soaking process is performed at room temperature, in the process, the adhesion between the dirt and the crystal surface is weakened by the aid of the zwitterionic surfactant, the surface tension and the free energy are reduced, and the dirt is separated from the crystal surface and suspended in the medium in the subsequent second pure water washing. The zwitterionic surfactant is in the nature of an anionic surfactant in an alkaline aqueous solution, and has good foaming and decontamination effects; and a small amount of weak alkali solution is added to make the cleaning solution alkaline, so that the property of the anionic surfactant is better exerted. The alternating placement of the spots and the unchanged orientation of the jams 4 are mainly to make the surface of the wafer 5 sufficiently contact with the cleaning solution and to enhance the cleaning solution.
In some embodiments of the invention, the weak base solution is at least one of ammonia, ammonium hydroxide, sodium acetate, sodium carbonate, and sodium bicarbonate; the zwitterionic surfactant is at least one of lecithin surfactant, amino acid surfactant and betaine surfactant.
In some embodiments of the present invention, the predetermined time for soaking the wafer 5 for the second time is 30 to 60 seconds, and the total time for soaking the wafer 5 for the second time is 60 to 120 seconds.
In some embodiments of the present invention, the etching solution in the second cleaning auxiliary device is ammonium hydroxide, hydrogen peroxide and pure water, and a volume ratio of the ammonium hydroxide to the hydrogen peroxide to the pure water is 2-3: 5-6: 90-100 parts.
Specifically, the temperature of the immersed corrosive liquid is not suitable to exceed 40 ℃, and the temperature of the corrosive liquid is gradually increased in the corrosion process due to the chemical exothermic reaction in the corrosion process, so that the chemical reaction rate is increased faster as the conventional theoretical temperature is higher, and the corresponding corrosion time is shorter. The process preferably balances and exchanges the corrosion time, the whole corrosion time is controlled to be 60-120 seconds, the corrosion time is not more than 120 seconds, the loss of the wafer 5 is 5-10 mu m within 180 seconds, and the loss is too much, so that the subsequent process is difficult to process due to insufficient thickness of the wafer 5.
Referring to fig. 6, 5 points of the wafer 5 are measured in thickness by immersing the wafer 5 in an etching solution for various times.
The wafer etching soaking time is 1 minute:
Figure BDA0003693921180000071
in the above test, after slicing by a diamond wire multi-wire cutting machine, slicing and clamping are carried out, 4 adjacent wafers with the thickness of 470 microns of gallium arsenide 460-. After the operation is finished, the thickness before and after the corrosion is measured by measuring the thickness of 5 points of the main surface, and the loss is about 1-3 mu m after 60 seconds of corrosion.
The wafer etching soaking time is 2 minutes:
Figure BDA0003693921180000072
in the test, after the diamond wire multi-wire cutting machine is used for slicing, clamping and plugging are carried out, 4 adjacent wafers with the thickness of 460-470 microns of gallium arsenide are selected, pure water washing is carried out for 20-30 seconds, alternate positions in cleaning liquid are kept still and soaked for 40-60 seconds, pure water washing is carried out for 10-20 seconds, static corrosion is carried out for 120 seconds, and then pure water washing is carried out for 10-20 seconds. After the operation is finished, the thickness before and after the corrosion is measured by measuring the thickness of 5 points of the main surface, and the loss is about 3-5 mu m after the corrosion is carried out for 120 seconds.
The wafer etching soaking time is 3 minutes:
Figure BDA0003693921180000073
in the test, after the diamond wire multi-wire cutting machine is used for slicing, clamping and plugging are carried out, 4 adjacent wafers with the thickness of 460-470 microns of gallium arsenide are selected, pure water washing is carried out for 20-30 seconds, alternate positions in cleaning liquid are kept still and soaked for 40-60 seconds, pure water washing is carried out for 10-20 seconds, static corrosion is carried out for 180 seconds, and then pure water washing is carried out for 10-20 seconds. After the operation is finished, the thickness before and after the corrosion is measured by measuring the thickness of 5 points of the main surface, and the loss is about 5-10 mu m after the corrosion is carried out for 180 seconds.
Therefore, the etching time is not longer than 120 seconds, the wafer drop is 5-10 μm in 180 seconds, and the wafer thickness is insufficient in the subsequent process due to excessive wafer drop, which makes the processing difficult.
Referring to fig. 2, a preferred embodiment of the present invention further provides an auxiliary device for cleaning a gallium arsenide wafer 5, which is used for assisting the method for cleaning the gallium arsenide wafer 5 as described in any of the above embodiments, and the auxiliary device includes a box 1, a carrier 2 is disposed inside the box 1, and a vertical cross section of the carrier 2 is a triangular structure.
In some embodiments of the present invention, the carrier 2 is hollow and has a grid structure. Specifically, the hollow and the grid can ensure that dirt adhered to the wafer 5 falls off and is accumulated at the bottom of the grid, so that the inclined placement of the clamping plug 4 is not influenced, and the inclined placement ensures that one surface of the wafer 5 does not contact the clamping plug 4.
In some embodiments of the invention, the carrier table 2 is provided with a plurality of carrier sites 3 carrying the plugs 4. A plurality of positions 3 that bear can realize that a plurality of blocks 4 soak simultaneously, improve clean efficiency.
The cleaning auxiliary device according to the invention has at least the following advantages:
through setting up clearance auxiliary device, can place card stopper 4 and soak in clearance auxiliary device, clearance auxiliary device's bottom surface is provided with plummer 2, card stopper 4 can directly be placed and soak on plummer 2, the section of plummer 2 is the triangle-shaped structure simultaneously, slope to both sides promptly, can make things convenient for the slope of card stopper 4 to soak, also make things convenient for standing of wafer 5 to soak, make 5 surperficial abundant contact washing liquid or corrosive liquid of wafer, and reinforcing clearance effect.
The above description is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and substitutions can be made without departing from the technical principle of the present invention, and these modifications and substitutions should also be regarded as the protection scope of the present invention.

Claims (10)

1. A method for cleaning a gallium arsenide wafer, comprising:
rinsing the wafer for the first time; loading the sliced wafer into a clamping plug, and washing the surface of the wafer by using pure water, wherein the clamping plug is continuously washed obliquely from side to side;
soaking the wafer for the first time; statically soaking the clamped plug which is washed for the first time in a first washing auxiliary device filled with washing liquid, and keeping the clamped plug inclined towards one direction; after soaking for a preset time, keeping the clamping plug inclined towards the other direction, and soaking for a preset time;
rinsing the wafer for the second time; washing the surface of the wafer soaked for the first time by pure water, wherein the clamping plug is continuously washed obliquely from side to side;
soaking the wafer for the second time; statically soaking the clamped plug which is washed for the second time in a second washing auxiliary device filled with corrosive liquid, and keeping the clamped plug inclined towards one direction; after soaking for a preset time, keeping the clamping plug inclined towards the other direction, and soaking for a preset time;
rinsing the wafer for the third time; and washing the surface of the wafer soaked for the second time by using pure water, and then placing the wafer in a water tank to finish the cleaning process.
2. The method of cleaning a gallium arsenide wafer as recited in claim 1, wherein: the time for rinsing the wafer surface with pure water is 20 to 30 seconds.
3. The method of cleaning a gallium arsenide wafer as recited in claim 1, wherein: when the wafer is soaked for the first time, the soaking preset time is 20-30 seconds, and the total time for soaking the wafer for the first time is 40-60 seconds.
4. The method of cleaning a gallium arsenide wafer as recited in claim 1, wherein: the cleaning liquid in the first cleaning auxiliary device comprises a weak alkaline solution, a zwitterionic surfactant and pure water, wherein the volume ratio of the weak alkaline solution to the zwitterionic surfactant to the pure water is (3-5): 1-2: 90-120 parts.
5. The method of cleaning a gallium arsenide wafer as recited in claim 4, wherein: the weak base solution is at least one of ammonia water, ammonium hydroxide, sodium acetate, sodium carbonate and sodium bicarbonate; the zwitterionic surfactant is at least one of lecithin surfactant, amino acid surfactant and betaine surfactant.
6. The method of cleaning a gallium arsenide wafer as recited in claim 1, wherein: when the wafer is soaked for the second time, the soaking time is 30-60 seconds, and the total time for soaking the wafer for the second time is 60-120 seconds.
7. The method of cleaning a gallium arsenide wafer as recited in claim 1, wherein: the etching solution in the second cleaning auxiliary device is ammonium hydroxide, hydrogen peroxide and pure water, and the volume ratio of the ammonium hydroxide to the hydrogen peroxide to the pure water is 2-3: 5-6: 90 to 100.
8. A cleaning assisting apparatus for assisting a cleaning method of a gallium arsenide wafer as claimed in any of claims 1 to 7, wherein: the box body is characterized in that a bearing table is arranged inside the box body, and the vertical section of the bearing table is of a triangular structure.
9. The cleaning aid of claim 8, wherein: the bearing platform is of a hollow and grid structure.
10. The cleaning aid of claim 8, wherein: the bearing table is provided with a plurality of bearing positions for bearing the clamping plugs.
CN202210672659.6A 2022-06-14 2022-06-14 Method for cleaning gallium arsenide wafer and auxiliary cleaning device thereof Pending CN115020197A (en)

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