CN115020180A - Automatic impedance matching method, device, system, electronic device and storage medium - Google Patents

Automatic impedance matching method, device, system, electronic device and storage medium Download PDF

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CN115020180A
CN115020180A CN202210647899.0A CN202210647899A CN115020180A CN 115020180 A CN115020180 A CN 115020180A CN 202210647899 A CN202210647899 A CN 202210647899A CN 115020180 A CN115020180 A CN 115020180A
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impedance
plasma
information
matching
standard table
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胡琅
李晓峰
姚龙
吴添洪
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Ji Hua Laboratory
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • H01J37/32183Matching circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38Impedance-matching networks
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E30/00Energy generation of nuclear origin
    • Y02E30/10Nuclear fusion reactors

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  • Engineering & Computer Science (AREA)
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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
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Abstract

The application relates to the field of semiconductor manufacturing, in particular to an automatic impedance matching method, a device, a system, electronic equipment and a storage medium, which are used for matching impedance in a reaction chamber, wherein the automatic impedance matching method comprises the following steps: acquiring impedance information of the plasma; acquiring an impedance standard table of the plasma, wherein the impedance standard table comprises a plurality of working state intervals divided according to the impedance change condition of the plasma, and the impedance standard table is generated according to the previous activation process of the plasma; acquiring the current working state of the plasma according to the impedance standard table and the impedance information; the impedance of the impedance matching box is adjusted according to the current working state so as to carry out impedance matching, self-adaptive rapid matching of the impedance is achieved through a method of first collection and then matching, and meanwhile the self-adaptive matching method is applicable to a plurality of platforms.

Description

Automatic impedance matching method, device, system, electronic device and storage medium
Technical Field
The present application relates to the field of semiconductor manufacturing, and in particular, to an automatic impedance matching method, apparatus, system, electronic device, and storage medium.
Background
With the development of science and technology and modern industry, the application of radio frequency power supply is more and more extensive, and the application of radio frequency power supply in the fields of vacuum coating, plasma equipment cleaning, semiconductor etching and the like, including the application in the aspects of radio frequency discharge, radio frequency heating and the like, the radio frequency power supply is used for providing high frequency energy for a reaction chamber at the rear end and converting input gas into plasma to obtain active molecules. Because the impedance characteristic of the gas in the reaction chamber changes violently before and after the gas is converted into plasma, if the impedance is mismatched, a large radio frequency power is reflected back to the radio frequency power supply from the cavity, and the radio frequency power supply is damaged. Because an impedance matching box is required to be arranged between the radio frequency power supply and the reaction chamber for carrying out impedance matching of the radio frequency power supply and the reaction chamber, the power is fed into the reaction chamber efficiently.
The existing automatic impedance matching method generally detects the impedance value of plasma in work, and then changes the working frequency to adapt to the current resonant frequency, so that the impedance can be matched with the impedance in the impedance box.
In view of the above problems, no effective technical solution exists at present.
Disclosure of Invention
The application aims to provide an automatic impedance matching method, an automatic impedance matching device, an automatic impedance matching system, an automatic impedance matching electronic device and a storage medium, and aims to solve the problems of large calculation amount and low efficiency of automatic impedance matching.
In a first aspect, the present application provides an automatic impedance matching method for matching impedance in a reaction chamber, the automatic impedance matching method comprising the steps of:
acquiring impedance information of the plasma;
acquiring an impedance standard table of the plasma, wherein the impedance standard table comprises a plurality of working state intervals divided according to the impedance change condition of the plasma, and the impedance standard table is generated according to the previous activation process of the plasma;
acquiring the current working state of the plasma according to the impedance standard table and the impedance information;
and adjusting the impedance of the impedance matching box according to the current working state to perform impedance matching.
The automatic impedance matching method provided by the application carries out the prior activation process of the plasma before impedance matching, generating an impedance standard table with different working state intervals by acquiring impedance information of the plasma in the previous activation process, in the working stage, matching the corresponding working state interval in the impedance standard table according to the impedance information of the plasma, therefore, the plasma can quickly complete impedance matching, and the method of first acquisition and then matching is adopted, the impedance standard table is established in the prior activation process, so that each working state interval in the impedance standard table can be automatically matched directly by acquiring impedance information in the working process, thereby realizing automatic and rapid impedance matching and improving matching efficiency, and simultaneously, because the pre-activation process is arranged, therefore, the corresponding impedance standard table can be established according to different parameters of different platforms, so that the automatic impedance matching method can be applied to a plurality of platforms.
Optionally, in an automatic impedance matching method provided by the present application, the step of obtaining impedance information of the plasma includes:
acquiring voltage information, current information and phase angle information;
impedance information of the plasma is generated based on the voltage information, the current information, and the phase angle information.
Optionally, in an automatic impedance matching method provided by the present application, a generation process of the impedance standard table includes:
performing previous activation on the plasma by using a radio frequency power supply;
acquiring reference impedance information of the plasma in the previous activation process;
establishing an impedance standard table according to the reference impedance information;
and dividing the impedance standard table into a plurality of working state intervals according to the slope change of the reference impedance information in the impedance standard table relative to time.
According to the method and the device, the reference impedance information is obtained by performing the previous activation process before working, the impedance standard table is established according to the reference impedance information, and the impedance is divided into a plurality of working state intervals in the impedance standard table, so that the impedance can adapt to different parameters of different machines to generate the impedance standard table, and the subsequent automatic matching of the impedance is facilitated.
Optionally, in the automatic impedance matching method provided by the present application, the step of establishing the impedance standard table according to the reference impedance information includes:
establishing a plurality of impedance information matrix tables according to reference impedance information generated by multiple operations of the radio frequency power supply;
and carrying out root mean square measurement on the plurality of impedance information matrix tables to obtain an impedance standard value table.
According to the method, a plurality of impedance information matrix tables are established through multiple measurements, root mean square measurement is carried out on the plurality of impedance matrix tables, and an impedance standard table is obtained and is a judgment basis of the working state of the plasma.
Optionally, in the automatic impedance matching method provided by the present application, different operating state intervals have corresponding target impedance information, and the step of adjusting the impedance of the impedance matching box according to the current operating state to perform impedance matching includes:
acquiring target impedance information matched with the current working state according to the current working state;
and adjusting the impedance of the impedance matching box according to the target impedance information matched with the current working state to perform impedance matching.
Optionally, in the automatic impedance matching method provided by the present application, the step of obtaining the current working state of the plasma according to the impedance standard table and the impedance information includes:
acquiring the instantaneous impedance slope of the impedance of the plasma along with the change of time according to the impedance information;
and acquiring the current working state of the plasma according to the instantaneous impedance slope and the working state interval of the impedance standard table.
In a second aspect, the present application also provides an automatic impedance matching apparatus for matching impedance in a reaction chamber, the automatic impedance matching apparatus comprising:
the first acquisition module is used for acquiring impedance information of the plasma;
the second acquisition module is used for acquiring an impedance standard table of the plasma, wherein the impedance standard table comprises a plurality of working state intervals divided according to the impedance change condition of the plasma, and the impedance standard table is generated according to the previous activation process of the plasma;
the third acquisition module is used for acquiring the current working state of the plasma according to the impedance standard table and the impedance information;
and the matching module is used for adjusting the impedance of the impedance matching box according to the current working state so as to carry out impedance matching.
The automatic impedance matching device provided by the application carries out the prior activation process of the plasma before impedance matching, generating an impedance standard table with different working state intervals by acquiring impedance information of the plasma in the previous activation process, in the working stage, matching the corresponding working state interval in the impedance standard table according to the impedance information of the plasma, therefore, the plasma can quickly complete impedance matching, and the method of first acquisition and then matching is adopted, the impedance standard table is established in the prior activation process, so that each working state interval in the impedance standard table can be automatically matched directly by acquiring impedance information in the working process, thereby realizing automatic and rapid impedance matching and improving matching efficiency, and simultaneously, because the device is arranged in the pre-activation process, therefore, the corresponding impedance standard table can be established according to different parameters of different platforms, so that the automatic impedance matching device can be applicable to a plurality of platforms.
In a third aspect, the present application also provides an automatic impedance matching system for matching impedance in a reaction chamber, comprising:
the reaction chamber is used for providing a reaction space for plasma activation;
the radio frequency power supply is used for providing energy for plasma activation;
the impedance matching box is used for adjusting and changing impedance by adjusting the internal adjustable capacitor;
the automatic impedance matching system further comprises:
the real-time impedance detector is used for acquiring impedance information of plasmas in the reaction chamber in real time;
the impedance storage unit is used for storing an impedance standard table, the impedance standard table comprises a plurality of working state intervals divided according to the impedance change condition of the plasma, and the impedance standard table is generated according to the previous activation process of the plasma;
the controller is electrically connected with the radio frequency power supply, the impedance matching box, the real-time impedance detector and the impedance storage unit;
the controller is used for acquiring impedance information of the plasma;
the controller is also used for obtaining an impedance standard table of the plasma;
the controller is also used for acquiring the current working state of the plasma according to the impedance standard table and the impedance information;
the controller is also used for adjusting the impedance of the impedance matching box according to the current working state so as to carry out impedance matching.
The automatic impedance matching system provided by the application carries out the prior activation process of the plasma before impedance matching, generating an impedance standard table with different working state intervals by acquiring impedance information of the plasma in the previous activation process, in the working stage, matching the corresponding working state interval in the impedance standard table according to the impedance information of the plasma, therefore, the plasma can quickly complete impedance matching, and the method of first acquisition and then matching is adopted, the impedance standard table is established in the prior activation process, so that each working state interval in the impedance standard table can be automatically matched directly by acquiring impedance information in the working process, thereby realizing automatic and rapid impedance matching and improving matching efficiency, and simultaneously, because the device is arranged in the pre-activation process, therefore, the corresponding impedance standard table can be established according to different parameters of different platforms, so that the automatic impedance matching system can be applicable to a plurality of platforms.
In a fourth aspect, the present application further provides an electronic device, comprising a processor and a memory, where the memory stores computer-readable instructions, and when the computer-readable instructions are executed by the processor, the method for automatic impedance matching according to the first aspect is executed by: acquiring impedance information of the plasma; acquiring an impedance standard table of the plasma, wherein the impedance standard table comprises a plurality of working state intervals divided according to the impedance change condition of the plasma, and the impedance standard table is generated according to the previous activation process of the plasma; acquiring the current working state of the plasma according to the impedance standard table and the impedance information; and adjusting the impedance of the impedance matching box according to the current working state to perform impedance matching.
In a fifth aspect, the present application further provides a storage medium having a computer program stored thereon, the computer program, when executed by a processor, executing the steps of the automatic impedance matching method as provided in the first aspect: acquiring impedance information of the plasma; acquiring an impedance standard table of the plasma, wherein the impedance standard table comprises a plurality of working state intervals divided according to the impedance change condition of the plasma, and the impedance standard table is generated according to the previous activation process of the plasma; acquiring the current working state of the plasma according to the impedance standard table and the impedance information; and adjusting the impedance of the impedance matching box according to the current working state to perform impedance matching.
From the above, the automatic impedance matching method, apparatus, system, electronic device and storage medium provided by the present application perform a previous activation process of a plasma before impedance matching, generate an impedance standard table with different operating state intervals by acquiring impedance information of the plasma in the previous activation process, and match corresponding operating state intervals in the impedance standard table according to the impedance information of the plasma in an operating stage, so that the plasma can complete impedance matching quickly, the present application establishes the impedance standard table in the previous activation process by a method of collecting and matching first and then by acquiring the impedance information, so that each operating state interval in the impedance standard table can be automatically matched directly by acquiring the impedance information in the operating process, thereby realizing quick adaptive impedance matching of impedance and improving matching efficiency, and meanwhile, because the method is set in the previous activation process, a corresponding impedance standard table can be established according to different parameters of different platforms, the automatic impedance matching method is applicable to a plurality of platforms.
Additional features and advantages of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the application. The objectives and other advantages of the application may be realized and attained by the structure particularly pointed out in the written description and drawings.
Drawings
Fig. 1 is a flowchart illustrating steps of an automatic impedance matching method according to an embodiment of the present disclosure.
Fig. 2 is a schematic structural diagram of an impedance matching box according to this embodiment.
Fig. 3 is a schematic structural diagram of an automatic impedance matching apparatus according to an embodiment of the present disclosure.
Fig. 4 is a schematic structural diagram of an automatic impedance matching system according to an embodiment of the present disclosure.
Fig. 5 is an electronic device according to an embodiment of the present application.
Description of reference numerals: 1. a radio frequency power supply; 2. a real-time impedance detector; 3. a controller; 4. an impedance matching box; 5. an impedance memory cell; 6. a reaction chamber; 100. a first acquisition module; 200. a second acquisition module; 300. a third obtaining module; 400. a matching module; 91. a processor; 92. a memory; 93. a communication bus.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present application without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.
In the existing impedance matching method, generally, the impedance value of the plasma is detected during working, and then the switching frequency of the inverter circuit is changed to adapt to the current resonant frequency, so that the impedance can be matched with the impedance in the impedance box.
In a first aspect, referring to fig. 1, fig. 1 is a flowchart illustrating steps of an automatic impedance matching method according to an embodiment of the present disclosure, where the automatic impedance matching method illustrated in fig. 1 is used for matching impedance in a reaction chamber 6, and the automatic impedance matching method includes the following steps:
s1, acquiring impedance information of the plasma;
s2, obtaining an impedance standard table of the plasma, wherein the impedance standard table comprises a plurality of working state intervals divided according to the impedance change condition of the plasma, and the impedance standard table is generated according to the previous activation process of the plasma;
s3, acquiring the current working state of the plasma according to the impedance standard table and the impedance information;
and S4, adjusting the impedance of the impedance matching box 4 according to the current working state to perform impedance matching.
Specifically, the method can be applied to an automatic impedance matching system shown in fig. 4, which includes a reaction chamber 6, a radio frequency power supply 1, an impedance matching box 4, a real-time impedance detector 2, an impedance storage unit 5, and a controller 3.
Specifically, the impedance information is the impedance value of the plasma formed in the reaction chamber 6 after being powered by the input gas rf power supply 1.
Specifically, the impedance matching process is divided into a preceding activation process and a working process, and when the plasma is in the preceding activation process, the radio frequency power supply 1 outputs energy to the reaction chamber 6 to activate the plasma in the reaction chamber 6 and acquire the impedance information of the plasma in the reaction chamber 6 in real time, obtaining an impedance standard table according to the change relation of the real-time impedance information along with time, dividing the impedance standard value table into a plurality of working state intervals according to the slope relation of the impedance and the time in the impedance standard table, and then entering a working process, specifically, the working process is the current activation process of the input gas, in the working process, the working state interval of the plasma in the impedance standard table is judged according to the slope relation between the impedance information acquired in real time and the time, and the plasma is moved to the corresponding working state interval to realize matching.
Specifically, the working process is a process of forming plasma after the input gas is energized by the radio frequency power supply 1 in the matching reaction chamber 6.
Preferably, during the operation, the impedance information of the plasma is continuously obtained, and an impedance standard table is obtained according to the time-varying relation of the real-time impedance information for use in the subsequent impedance matching, and after the impedance standard table is generated, the impedance standard table is stored in the impedance storage unit 5.
Specifically, in the present embodiment, the operating state of the plasma is divided into three states: the plasma ignition method comprises a power rising process, an ignition process and a sustain discharge process, wherein the slope relations of impedance and time in three states are different, specifically, in the power rising process, the impedance of a plasma has a positive volt-ampere characteristic, namely the impedance is reduced at the moment, the impedance changes with time in a descending trend, in the ignition process, the impedance of the plasma is rapidly reduced in a short time and reaches the minimum value of the impedance, the impedance slope is smaller than the impedance slope in the power rising process, in the sustain discharge process, the plasma is formed at the moment, stable excitation needs to be provided from the outside, the impedance slope slightly rises at the moment, the change is small, the whole is stable, therefore, the impedance slopes in three stages are different, and the current working state of the plasma can be judged according to the impedance slopes.
The automatic impedance matching method in the embodiment of the application carries out the prior activation process of the plasma before the impedance matching, generating an impedance standard table with different working state intervals by acquiring impedance information of the plasma in the previous activation process, in the working process, matching the corresponding working state interval in the impedance standard table according to the impedance information of the plasma, therefore, the plasma can quickly complete impedance matching, and the method of first acquisition and then matching is adopted, the impedance standard table is established in the prior activation process, so that each working state interval in the impedance standard table can be automatically matched directly by acquiring impedance information in the working process, thereby realizing automatic and rapid impedance matching and improving matching efficiency, and simultaneously, because the device is arranged in the pre-activation process, therefore, the corresponding impedance standard table can be established according to different parameters of different platforms, so that the automatic impedance matching method can be applied to a plurality of platforms.
In some preferred embodiments, the step of obtaining impedance information of the plasma comprises:
acquiring voltage information, current information and phase angle information;
impedance information of the plasma is generated based on the voltage information, the current information, and the phase angle information.
Specifically, in the present embodiment, the impedance information of the plasma can be generated by acquiring the voltage information, the current information and the phase angle information of the plasma, and the generation process is as follows:
if the current flowing through the plasma is
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Then the voltage across the plasma is:
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wherein R is the impedance of the plasma, V is the voltage across the plasma, I is the current through the plasma,
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and
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both represent the angle of the phase angle, but they behave differently, such as:
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if = pi/3, then
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=60°,
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Which is indicative of the magnitude of the current,
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represents the coefficient of expansion of the curve of the trigonometric function graph,
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where freq represents the frequency of the rf power supply 1 at this time, and the other quantity can be obtained by only knowing three of the impedance, voltage, current amplitude and phase angle of the plasma.
In some preferred embodiments, the generating of the impedance criteria table from a prior activation process of the plasma comprises:
the plasma is previously activated by means of a radio-frequency power supply 1;
acquiring reference impedance information of the plasma in the previous activation process;
establishing an impedance standard table according to the reference impedance information;
and dividing the impedance standard table into a plurality of working state intervals according to the slope change of the reference impedance information in the impedance standard table relative to time.
Specifically, the impedance standard table is a time-related impedance variation curve, and the impedance standard table with different working state intervals is established, so that in the working process, the impedance information can be obtained and automatically matched with each working state interval in the impedance standard table, thereby reducing the calculation time of matching and improving the matching efficiency.
In some preferred embodiments, the step of creating an impedance criteria table based on the reference impedance information comprises:
establishing a plurality of impedance information matrix tables according to reference impedance information generated by multiple operations of the radio frequency power supply 1;
and carrying out root mean square measurement on the plurality of impedance information matrix tables to obtain an impedance standard value table.
Specifically, in this embodiment, 3 impedance information matrix tables are collected: a1, A2, A3, A1, A2 and A3 are impedance information matrix tables collected under different powers, wherein the impedance information matrix tables are
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For values of real parts of three impedances acquired consecutively during a first period,
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for values of imaginary parts of three impedances acquired consecutively during a first period of time, according to
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The standard deviation k1 of the real part of the impedance can be calculated, based on
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The standard deviation n1 of the imaginary part of the impedance can be calculated; similarly, the standard deviation k2 of the impedance real part continuously acquired in the second time period, the standard deviation n2 of the impedance imaginary part continuously acquired in the second time period, the standard deviation k3 of the impedance real part continuously acquired in the third time period, and the standard deviation n3 of the impedance imaginary part continuously acquired in the third time period can be calculated, the standard deviations k1, k2 and k3 of the impedance real part continuously acquired in the three time periods are averaged to obtain p1, the standard deviations n1, n2 and n3 of the impedance imaginary part continuously acquired in the three time periods are averaged to obtain p2, and in actual operation, different matching scenes and different matching parameters of impedance matching are obtained, so that different preset empirical coefficient values are obtained, wherein the preset empirical coefficient values comprise the real part j1 and the imaginary part j2, and if the p1 is adopted<j1, and p2<j2, it can be determined that one of the three obtained impedance information matrix tables that satisfies the conditions is an impedance standard value table, and if none of the above conditions is satisfied, the impedance information matrix table is not an impedance standard value table, and it is necessary to continuously obtain the three obtained impedance information matrix tables in the next three time periods to compare and determine with the preset empirical coefficient value.
In some preferred embodiments, the different operating state intervals have corresponding target impedance information, and the step of adjusting the impedance of the impedance matching box 4 according to the current operating state to perform impedance matching includes:
acquiring target impedance information matched with the current working state according to the current working state;
and adjusting the impedance of the impedance matching box 4 according to the target impedance information matched with the current working state to perform impedance matching.
In some preferred embodiments, the step of obtaining the current working state of the plasma according to the impedance standard table and the impedance information comprises:
acquiring the instantaneous impedance slope of the impedance of the plasma along with the change of time according to the impedance information;
and acquiring the current working state of the plasma according to the instantaneous impedance slope and the working state interval of the impedance standard table.
Generally, in the semiconductor field, the power level of the rf power supply 1 reaches kw, so that the capacitive voltage-withstanding capability of the impedance matching box 4 is required to be very high, and in this embodiment, a vacuum capacitor is selected to form the adjustable element of the impedance matching box 4.
Specifically, the impedance matching box 4 is used for adjusting the impedance size to match the impedance, generally, the impedance matching box 4 is usually used for matching the impedance by adjusting the resonant frequency, and since the impedance variation characteristic of the impedance load may be several times or even tens of times of the initial impedance amplitude, the method of adjusting the resonant frequency is very limited, preferably, referring to fig. 2, fig. 2 is a schematic structural diagram of an impedance matching box provided in this embodiment, the impedance matching box 4 shown in fig. 2 employs a pi-type matching circuit, and the impedance matching box 4 includes a fixed capacitor
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Fixed inductance L, variable capacitance
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By adjusting the variable capacitance
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The capacitance value of can realizing the matching of impedance, specifically, adjust the capacitance value through adjusting the just right area of electric capacity board, the just right area and the capacitance value of electric capacity board are directly proportional, drive the electric capacity board through the motor to change the just right area of electric capacity board, and then change the capacitance value.
Specifically, since the slopes in the linear relationship between the impedance and the time are obviously different under different operating states, the operating state of the plasma at the moment can be judged according to the instantaneous impedance slopes at different moments, and specifically, the operating state of the plasma at the moment is determined by combining the similarity between the instantaneous impedance slopes and the slopes of the operating state intervals in the impedance standard table.
Specifically, an impedance slope needs to be obtained according to impedance information acquired in real time, specifically, a plurality of impedance value points at different time periods can be acquired to calculate the impedance slope, in some embodiments, two time points which are just taken may be respectively in different working state intervals, so that, in order to improve the accuracy of acquiring the impedance slope, the time interval for acquiring different time points can be reduced, but if the time interval is too short, the calculation error of the impedance slope is easily larger, therefore, in order to reduce the slope error and prevent sampling points from being located in different working state intervals, a plurality of groups of data can be acquired, the time interval between two adjacent sampling points in each group of data is smaller than the time interval between the plurality of groups of data, and the time interval cannot be too small, a plurality of impedance slopes are obtained through the plurality of groups of data, data which obviously do not accord with other impedance slope data are excluded, and the remaining impedance slope values are averaged, in the embodiment, three groups of sampling data are set, each group of sampling data is provided with two sampling points, the two sampling points are spaced for 1-2 seconds, the interval between each group of data is 5-10 seconds, the impedance slopes with similar data are averaged after the impedance slopes of the three groups of data are obtained, and then the average impedance slope is compared with the information of the impedance standard table and matched with the corresponding working state interval in the impedance standard table.
Specifically, a preset point is set in each operating state interval by setting a variable capacitance
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And
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in this embodiment, taking a certain IPC machine as an example, assume that the power-up process is performed in a period from 0 to t1, and the impedance characteristic of the plasma at this time is as follows: the imaginary part is positive, the impedance is gradually reduced from more than 200 ohms, the ignition process is carried out in the period of t1-t2, and the impedance characteristic of the plasma is as follows: the imaginary part gradually decreases to near 0, and the real part value stabilizes near 50 ohms, and after t2, the plasma impedance characteristic is as follows: the real part and the imaginary part are kept stable, and the change value is small.
Further, the preset point needs to be obtained by calculation according to the impedance value of the plasma in each operating state interval and the frequency of the rf power supply 1, and in this embodiment, it is assumed that the impedance value of the current plasma is (m) 1 +n 1 j) Ω, impedance value of the present impedance matching network is (m) 2 +n 2 j) Omega, by adjusting the variable capacitance
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The real part of the impedance can be changed by adjusting
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The imaginary part of the impedance may be varied. Specifically, in the present embodiment, the difference of the real parts is m 1 -m 2 According to the formula of capacitance-impedance
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Then can find out
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The difference of the imaginary parts is n 1 -n 2 According to the formula of capacitance-impedance
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Then can obtain
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Where freq represents the frequency of the rf power supply 1 at that time.
For example, if the plasma is in the process of power ramp-up, the matching target in the process of power ramp-up is selected at the point at the time of 0.9t1, and since the impedance of the plasma at this time gradually decreases to 50 ohms, in this embodiment, it is assumed that the impedance at the time of 0.9t1 is 70 ohms, that is, 70 ohms is the matching target at this time, and the variable capacitance is calculated according to the formula
Figure 678245DEST_PATH_IMAGE017
And
Figure 397939DEST_PATH_IMAGE018
the preset points are respectively 52pF and 174pF so as to realize impedance matching, if the plasma is in the ignition process, because the plasma is stabilized near 50 ohm at the moment, the matching target in the ignition process is selected to be 50 ohm, and the variable capacitance is obtained through calculation according to a formula
Figure 35594DEST_PATH_IMAGE017
And
Figure 388209DEST_PATH_IMAGE018
the preset points are respectively 98pF and 42pF so as to realize impedance matching, if the plasma is in the process of maintaining discharge, because the imaginary part and the real part of the impedance are kept stable at the moment, a stable value is selected as a matching target in the process of maintaining discharge, and the variable capacitance is obtained by calculation according to a formula
Figure 176037DEST_PATH_IMAGE017
And
Figure 343713DEST_PATH_IMAGE018
are respectively 80pF and 59pF to achieve impedance matching.
The automatic impedance matching method provided by this embodiment performs a preceding activation process of the plasma before impedance matching, generating an impedance standard table with different working state intervals by acquiring impedance information of the plasma in the previous activation process, in the working stage, matching the corresponding working state interval in the impedance standard table according to the impedance information of the plasma, therefore, the plasma can quickly complete impedance matching, and the method of first acquisition and then matching is adopted, the impedance standard table is established in the prior activation process, so that each working state interval in the impedance standard table can be automatically matched directly by acquiring impedance information in the working process, thereby realizing automatic and rapid impedance matching and improving matching efficiency, and simultaneously, because the device is arranged in the pre-activation process, therefore, the corresponding impedance standard table can be established according to different parameters of different platforms, so that the automatic impedance matching method can be applied to a plurality of platforms.
In a second aspect, referring to fig. 3, fig. 3 is a schematic structural diagram of an automatic impedance matching apparatus according to an embodiment of the present application, and fig. 3 shows an automatic impedance matching apparatus for matching impedance in a reaction chamber 6, the automatic impedance matching apparatus includes:
a first obtaining module 100, configured to obtain impedance information of a plasma;
a second obtaining module 200, configured to obtain an impedance standard table of the plasma, where the impedance standard table includes a plurality of working state intervals divided according to a plasma impedance change condition, and the impedance standard table is generated according to a previous activation process of the plasma;
a third obtaining module 300, configured to obtain a current working state of the plasma according to the impedance standard table and the impedance information;
and the matching module 400 is used for adjusting the impedance of the impedance matching box 4 according to the current working state so as to carry out impedance matching.
The automatic impedance matching device provided by this embodiment performs a preceding activation process of the plasma before impedance matching, generating an impedance standard table with different working state intervals by acquiring impedance information of the plasma in the previous activation process, in the working stage, matching the corresponding working state interval in the impedance standard table according to the impedance information of the plasma, therefore, the plasma can quickly complete impedance matching, and the method of first acquisition and then matching is adopted, the impedance standard table is established in the prior activation process, so that each working state interval in the impedance standard table can be automatically matched directly by acquiring impedance information in the working process, thereby realizing automatic and rapid impedance matching and improving matching efficiency, and simultaneously, because the pre-activation process is arranged, therefore, the corresponding impedance standard table can be established according to different parameters of different platforms, so that the automatic impedance matching device can be applicable to a plurality of platforms.
In a third aspect, referring to fig. 4, fig. 4 is a schematic structural diagram of an automatic impedance matching system provided in an embodiment of the present application, and an automatic impedance matching system shown in fig. 4 is used for matching impedance in a reaction chamber 6, and includes:
a reaction chamber 6 for providing a reaction space for plasma activation;
the radio frequency power supply 1 is used for providing energy for plasma activation;
the impedance matching box 4 is used for completing the adjustment and the change of impedance by adjusting the internal adjustable capacitor;
the automatic impedance matching system further comprises:
the real-time impedance detector 2 is used for acquiring impedance information of plasma in the reaction chamber 6 in real time;
the impedance storage unit 5 is used for storing an impedance standard table, the impedance standard table comprises a plurality of working state intervals divided according to the impedance change condition of the plasma, and the impedance standard table is generated according to the previous activation process of the plasma;
the controller 3 is electrically connected with the radio frequency power supply 1, the impedance matching box 4, the real-time impedance detector 2 and the impedance storage unit 5;
the controller 3 is used for acquiring impedance information of the plasma;
the controller 3 is also used for obtaining an impedance standard table of the plasma;
the controller 3 is also used for obtaining the current working state of the plasma according to the impedance standard table and the impedance information;
the controller 3 is also used for adjusting the impedance of the impedance matching box 4 according to the current working state so as to carry out impedance matching.
The automatic impedance matching system provided by the embodiment of the application carries out the previous activation process of the plasma before impedance matching, generates the impedance standard table with different working state intervals by obtaining the impedance information of the plasma in the previous activation process, and matches the corresponding working state intervals in the impedance standard table according to the impedance information of the plasma in the working stage so as to enable the plasma to quickly finish impedance matching. The automatic impedance matching system is applicable to a plurality of platforms.
In a fourth aspect, with reference to fig. 5, fig. 5 is an electronic device provided in the present application, including: the processor 91 and the memory 92, the processor 91 and the memory 92 being interconnected and communicating with each other via a communication bus 93 and/or other form of connection mechanism (not shown), the memory 92 storing a computer program executable by the processor 91, the processor 91 executing the computer program to perform any of the alternative implementations of the above embodiments when the electronic device is running, to implement the following functions: acquiring impedance information of the plasma; acquiring an impedance standard table of the plasma, wherein the impedance standard table comprises a plurality of working state intervals divided according to the impedance change condition of the plasma, and the impedance standard table is generated according to the previous activation process of the plasma; acquiring the current working state of the plasma according to the impedance standard table and the impedance information; the impedance of the impedance matching box 4 is adjusted according to the current operating state to perform impedance matching.
In a fifth aspect, the present application provides a storage medium having a computer program stored thereon, where the computer program, when executed by the processor 91, performs the method in any one of the alternative implementations of the above embodiments to implement the following functions: acquiring impedance information of the plasma; acquiring an impedance standard table of the plasma, wherein the impedance standard table comprises a plurality of working state intervals divided according to the impedance change condition of the plasma, and the impedance standard table is generated according to the previous activation process of the plasma; acquiring the current working state of the plasma according to the impedance standard table and the impedance information; the impedance of the impedance matching box 4 is adjusted according to the current operating state to perform impedance matching.
From the above, the automatic impedance matching method, apparatus, system, electronic device and storage medium provided by the present application perform a previous activation process of a plasma before impedance matching, generate an impedance standard table with different working state intervals by obtaining impedance information of the plasma in the previous activation process, and match the corresponding working state intervals in the impedance standard table according to the impedance information of the plasma in a working stage, so as to enable the plasma to rapidly complete impedance matching, the present application establishes the impedance standard table in the previous activation process by a method of collecting and matching first and then, so as to enable each working state interval in the impedance standard table to be automatically matched by directly obtaining the impedance information in the working process, thereby implementing automatic rapid impedance matching, and improving matching efficiency, and meanwhile, because the present activation process is set, a corresponding impedance standard table can be established according to different parameters of different platforms, the automatic impedance matching method is applicable to a plurality of platforms.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other ways. The above-described embodiments of the apparatus are merely illustrative, and for example, a division of a unit is merely a division of one logic function, and there may be other divisions when actually implemented, and for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection of devices or units through some communication interfaces, and may be in an electrical, mechanical or other form.
In addition, units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
Furthermore, the functional modules in the embodiments of the present application may be integrated together to form an independent part, or each module may exist separately, or two or more modules may be integrated to form an independent part.
In this document, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.
The above embodiments are merely examples of the present application and are not intended to limit the scope of the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims (10)

1. An automatic impedance matching method for matching impedance in a reaction chamber (6), characterized in that it comprises the steps of:
acquiring impedance information of the plasma;
acquiring an impedance standard table of the plasma, wherein the impedance standard table comprises a plurality of working state intervals divided according to the impedance change condition of the plasma, and the impedance standard table is generated according to the previous activation process of the plasma;
acquiring the current working state of the plasma according to the impedance standard table and the impedance information;
and adjusting the impedance of the impedance matching box (4) according to the current working state to perform impedance matching.
2. The method of claim 1, wherein the step of obtaining impedance information of the plasma comprises:
acquiring voltage information, current information and phase angle information;
generating impedance information of the plasma from the voltage information, the current information, and the phase angle information.
3. The automatic impedance matching method according to claim 1, wherein the generating of the impedance standard table comprises:
the plasma is previously activated by means of a radio-frequency power supply (1);
acquiring reference impedance information of the plasma in the previous activation process;
establishing the impedance standard table according to the reference impedance information;
and dividing the impedance standard table into a plurality of working state intervals according to the slope change of the reference impedance information in the impedance standard table about time.
4. The automatic impedance matching method of claim 3, wherein the step of establishing the impedance criteria table according to the reference impedance information comprises:
establishing a plurality of impedance information matrix tables according to the reference impedance information generated by the radio frequency power supply (1) in multiple operations;
and carrying out root mean square measurement on the plurality of impedance information matrix tables to obtain the impedance standard value table.
5. The automatic impedance matching method according to claim 1, wherein different working state intervals have corresponding target impedance information, and the step of adjusting the impedance of the impedance matching box (4) according to the current working state for impedance matching comprises:
acquiring target impedance information matched with the current working state according to the current working state;
and adjusting the impedance of an impedance matching box (4) according to the target impedance information matched with the current working state to perform impedance matching.
6. The method of claim 1, wherein the step of obtaining the current operating state of the plasma according to the impedance criteria table and the impedance information comprises:
acquiring the instantaneous impedance slope of the impedance of the plasma along with the change of time according to the impedance information;
and acquiring the current working state of the plasma according to the instantaneous impedance slope and the working state interval of the impedance standard table.
7. An automatic impedance matching apparatus for matching impedance in a reaction chamber (6), characterized in that the automatic impedance matching apparatus comprises:
a first acquisition module (100) for acquiring impedance information of the plasma;
a second obtaining module (200) for obtaining an impedance standard table of the plasma, wherein the impedance standard table comprises a plurality of working state intervals divided according to the impedance change condition of the plasma, and the impedance standard table is generated according to the previous activation process of the plasma;
a third obtaining module (300) for obtaining the current working state of the plasma according to the impedance standard table and the impedance information;
and the matching module (400) is used for adjusting the impedance of the impedance matching box (4) according to the current working state so as to carry out impedance matching.
8. An automatic impedance matching system for matching impedance in a reaction chamber (6), comprising:
a reaction chamber (6) for providing a reaction space for plasma activation;
a radio frequency power supply (1) for providing energy for said plasma activation;
the impedance matching box (4) is used for completing the adjustment and the change of impedance by adjusting the internal adjustable capacitor;
characterized in that the automatic impedance matching system further comprises:
a real-time impedance detector (2) for acquiring impedance information of the plasma in the reaction chamber (6) in real time;
the impedance storage unit (5) is used for storing an impedance standard table, the impedance standard table comprises a plurality of working state intervals divided according to the impedance change condition of the plasma, and the impedance standard table is generated according to the previous activation process of the plasma;
the controller (3), the controller (3) is electrically connected with the radio frequency power supply (1), the impedance matching box (4), the real-time impedance detector (2) and the impedance storage unit (5);
the controller (3) is used for acquiring impedance information of the plasma;
the controller (3) is also used for acquiring an impedance standard table of the plasma;
the controller (3) is also used for acquiring the current working state of the plasma according to the impedance standard table and the impedance information;
the controller (3) is also used for adjusting the impedance of the impedance matching box (4) according to the current working state so as to carry out impedance matching.
9. An electronic device, comprising a processor (91) and a memory (92), the memory (92) storing computer readable instructions which, when executed by the processor (91), perform the steps of the method according to any one of claims 1-6.
10. A storage medium on which a computer program is stored, which computer program, when being executed by a processor (91), is adapted to carry out the steps of the method according to any one of claims 1-6.
CN202210647899.0A 2022-06-09 2022-06-09 Automatic impedance matching method, device, system, electronic device and storage medium Pending CN115020180A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117517777A (en) * 2024-01-05 2024-02-06 季华实验室 Amplitude and phase detection circuit and impedance matcher

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117517777A (en) * 2024-01-05 2024-02-06 季华实验室 Amplitude and phase detection circuit and impedance matcher

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