CN115000094A - Display substrate, manufacturing method thereof and display device - Google Patents
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- CN115000094A CN115000094A CN202210624402.3A CN202210624402A CN115000094A CN 115000094 A CN115000094 A CN 115000094A CN 202210624402 A CN202210624402 A CN 202210624402A CN 115000094 A CN115000094 A CN 115000094A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000010409 thin film Substances 0.000 claims abstract description 272
- 239000010410 layer Substances 0.000 claims description 375
- 238000000034 method Methods 0.000 claims description 55
- 230000008569 process Effects 0.000 claims description 42
- 239000011229 interlayer Substances 0.000 claims description 39
- 239000000463 material Substances 0.000 claims description 15
- 238000000137 annealing Methods 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 7
- 239000003990 capacitor Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 24
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- 150000004706 metal oxides Chemical class 0.000 description 4
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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Abstract
The invention provides a display substrate, a manufacturing method thereof and a display device, and belongs to the technical field of display. The display substrate comprises a pixel circuit positioned on a substrate, the pixel circuit comprises a driving thin film transistor, a switching thin film transistor and a grid driving circuit thin film transistor, and an active layer of the driving thin film transistor and an active layer of the switching thin film transistor are positioned on different layers; and/or the active layer of the driving thin film transistor and the active layer of the grid driving circuit thin film transistor are positioned at different layers. The technical scheme of the invention can improve the display effect of the display device.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display substrate, a manufacturing method thereof and a display device.
Background
In the field of flat panel Display technology, a Thin Film Transistor Display (TFT-LCD) has the advantages of small volume, low power consumption, relatively low manufacturing cost, and the like, and gradually occupies a leading position in the current flat panel Display market.
An Organic Light-Emitting Diode (OLED) is also called an Organic electroluminescent display or an Organic Light-Emitting semiconductor. And Liquid Crystal Display (LCD) are different types of light emitting principles. The OLED display technology has advantages of self-luminescence, wide viewing angle, almost infinite contrast, low power consumption, very high response speed, etc., is called as a next generation display technology, and is likely to replace the LCD in the near future.
The transparent metal Oxide thin film transistor (Oxide TFT) has the advantages of higher mobility, good uniformity of large generation lines, lower manufacturing cost, compatibility with an a-Si production line and the like, and the Oxide TFT has good hysteresis characteristic, is beneficial to improving the hysteresis problem of OLED products, and is more and more favored by the OLED products.
Disclosure of Invention
The invention aims to provide a display substrate, a manufacturing method thereof and a display device, which can improve the display effect of the display device.
To solve the above technical problem, embodiments of the present invention provide the following technical solutions:
in one aspect, there is provided a display substrate including a pixel circuit on a substrate, the pixel circuit including a driving thin film transistor, a switching thin film transistor, and a gate driving circuit thin film transistor,
the active layer of the driving thin film transistor and the active layer of the switching thin film transistor are positioned on different layers; and/or
The active layer of the driving thin film transistor and the active layer of the grid driving circuit thin film transistor are positioned on different layers.
In some embodiments, the active layer of the switching thin film transistor and the active layer of the gate driving circuit thin film transistor are arranged in the same layer and the same material.
In some embodiments, the gate insulating layer of the driving thin film transistor has a thickness greater than that of the switching thin film transistor; and/or
The thickness of the gate insulating layer of the driving thin film transistor is larger than that of the gate insulating layer of the gate driving circuit thin film transistor.
In some embodiments, an on-resistance of the active layer of the driving thin film transistor is greater than an on-resistance of the active layer of the switching thin film transistor; and/or
The on-resistance of the active layer of the driving thin film transistor is greater than that of the active layer of the gate driving circuit thin film transistor.
In some embodiments, the display substrate includes an interlayer insulating layer located on a side of the active layer of the driving thin film transistor, which is away from the substrate, and the interlayer insulating layer includes a first interlayer sub-layer insulating layer and a second interlayer sub-layer insulating layer, the first interlayer sub-layer insulating layer is made of silicon oxide, the second interlayer sub-layer insulating layer is made of silicon nitride, and the second interlayer sub-layer insulating layer is located on a side of the first interlayer sub-layer insulating layer, which is away from the substrate.
In some embodiments, the active layer of the driving thin film transistor is processed by an annealing process.
In some embodiments, mobility of the active layer of the driving thin film transistor is less than mobility of the active layer of the switching thin film transistor; and/or
The mobility of the active layer of the driving thin film transistor is less than that of the gate driving circuit thin film transistor.
In some embodiments, an area of the gate insulating layer of the driving thin film transistor is larger than an area of the gate insulating layer of the switching thin film transistor; and/or
The area of the gate insulating layer of the driving thin film transistor is larger than that of the gate insulating layer of the gate driving circuit thin film transistor.
In some embodiments, the storage capacitor of the pixel circuit comprises two oppositely arranged plates, and the plates adopt a grid electrode of a thin film transistor or the active layer which is made of a conductor.
Embodiments of the present invention also provide a display device, including the display substrate as described above.
The embodiment of the invention also provides a manufacturing method of a display substrate, the display substrate comprises a pixel circuit positioned on a substrate, the pixel circuit comprises a driving thin film transistor, a switch thin film transistor and a grid driving circuit thin film transistor, and the manufacturing method comprises the following steps:
manufacturing an active layer of the driving thin film transistor and an active layer of the switching thin film transistor through different composition processes; and/or
And manufacturing an active layer of the driving thin film transistor and an active layer of the gate driving circuit thin film transistor through different patterning processes.
In some embodiments, the method of making further comprises:
and forming an active layer of the switching thin film transistor and an active layer of the gate driving circuit thin film transistor through a one-time composition process.
The embodiment of the invention has the following beneficial effects:
in the scheme, the active layers of the driving thin film transistor and the switching thin film transistor and/or the grid driving circuit thin film transistor are formed by adopting different composition processes, the driving thin film transistor and the switching thin film transistor and/or the grid driving circuit thin film transistor are separately and independently formed, so that the characteristics of the driving thin film transistor and the process processes and the characteristics of the switching thin film transistor and the grid driving circuit thin film transistor are not interfered, and further, the driving capability of the switching thin film transistor and the grid driving circuit thin film transistor is not influenced by reducing the I of the driving thin film transistor on And increasing SS for driving the thin film transistor to improve the display effect of the high mobility Oxide OLED product.
Drawings
FIG. 1 is a schematic diagram of a pixel circuit of a display substrate;
FIG. 2 is a schematic diagram of a related art display substrate;
fig. 3-10 are schematic structural views of a display substrate according to an embodiment of the invention.
Reference numerals
01 substrate base plate
02 first flexible substrate
03 first barrier layer
04 second flexible substrate
05 second barrier layer
06 first buffer layer
07 first gate insulating layer
08 second gate insulating layer
09 interlayer insulating layer
10 source drain metal layer
11 active layer
12 first gate metal layer
13 second gate metal layer
14 second buffer layer
15 third gate insulating layer
16 third gate metal layer
111 active layer of driving thin film transistor
17 first inter-sub-layer insulation layer
18 second inter-sub-layer insulation layer
19 via hole
Detailed Description
In order to make the technical problems, technical solutions and advantages to be solved by the embodiments of the present invention clearer, the following detailed description is made with reference to the accompanying drawings and specific embodiments.
A Pixel (Pixel) circuit of an OLED display product generally includes a Driving Thin Film Transistor (DTFT), a Switching Thin Film Transistor (STFT), a Storage Capacitor (Cst), and a Light Emitting Diode (LED), as shown in fig. 1.
At present, low temperature polysilicon thin film transistors (LTPS TFTs) are generally used in OLED Pixel circuits because the mobility of the LTPS TFTs can reach 50-100 cm 2 (v.s) the LTPS TFT has high switching speed when used as STFT, and can realize narrow-frame and low-power display product when used as GOA (Gate driver Circuit) TFT, but when used as DTFT, the LTPS TFT has high mobility, and the TFT has I on Too large, since the OLED is a current-driven device, I on When the size of the organic light emitting diode is too large, the organic light emitting diode is not favorable for displaying different gray scales, the problem of poor Mura of low gray scale is easily caused, the display effect of an Organic Light Emitting Diode (OLED) product is seriously influenced, and the I of LTPS DTFT is reduced on On one hand, the L (channel length) of the TFT is made larger (such as more than 20 um), and on the other hand, the L (channel length) of the TFT is made largerThe over-high temperature Anneal process increases the sub-threshold Swing (SS) of the LTPS DTFT to reduce the I of the LTPS DTFT on And the display effect of the OLED product is improved.
The transparent metal Oxide thin film transistor (Oxide TFT) has the advantages of higher mobility, good large generation line uniformity, lower manufacturing cost, compatibility with an a-Si production line and the like, and the Oxide TFT has good hysteresis characteristic, is favorable for improving the hysteresis problem of OLED products, and is more and more favored by the OLED products. However, the mobility of the existing conventional oxide material such as IGZO is 10cm 2 (v.s) when used as STFT, the switching speed is not fast enough, especially when used as DTFT, the frame can not be made small, which limits the application of Oxide TFT in OLED display products.
With the development of Oxide TFT technology, the mobility is 20cm 2 /(v.s) or more, particularly, a mobility of 30cm 2 /(v.s) or more (e.g., ITZO, IGTO, IGZTO, etc.) and even a mobility of 50cm 2 The oxide material of/(v.s) is gradually used. The Oxide material with high mobility is applied to OLED display products, so that the switching speed of STFT can be improved, the frame of the products can be reduced, and the power consumption can be reduced. However, when the Oxide DTFT is made of a high-mobility Oxide material, the problem that the DTFT is made of LTPS, namely I of the high-mobility Oxide DTFT is also encountered on The organic light emitting diode is large, is not beneficial to the development of OLED for displaying different gray scales, is easy to generate the problem of poor low gray scale Mura, and seriously influences the display effect of OLED products.
To improve the display effect of Oxide OLED display products, it is necessary to reduce the I of the high mobility Oxide DTFT on . Existing poly LTPS DTFTs typically reduce I by increasing the L (e.g., 20 μm or more) of the TFT on However, for an amorphous high mobility Oxide TFT, the Vth difference between a small L TFT (e.g., L about 4 μm) and a large L TFT (e.g., L about 10 μm) is significant, i.e., when L of Oxide DTFT and Oxide STFT is different, Vth needs to be controlled by different processes; another reduction of I for polycrystalline LTPS DTFT on The method comprises the steps of enabling H in LTPS DTFT to escape through a high-temperature annex process, increasing defects in the DTFT, and further enabling SS of the DTFT to be enlarged to reduce I of the DTFT on But toIn general, the higher the mobility of an amorphous Oxide TFT, the lower the stability of the TFT, so that the high mobility Oxide material has a mobility of 30cm 2 /(v.s) materials with lower mobility than LTPS TFTs if the I of the DTFT is reduced by increasing the SS on I of those STFT and GOA TFTs on Is also bound to be influenced, STFT I on The reduction affects the STFT switching speed, GOA TFT I on When the size of the gate electrode is reduced, the W (channel width) size of the GOA TFT needs to be increased to enhance the driving capability, which increases the frame of the OLED product.
DTFT I when high mobility Oxide is used as an OLED display product on Larger and smaller SS are not favorable for OLED to display different gray scales, the problem of poor low gray scale Mura is easily caused, the display effect of OLED products is seriously influenced, and if the DTFT I is reduced on And increasing DTFT SS to improve display effect, will affect the I of STFT and GOA TFT on And further, the driving capability of the STFT and GOA TFT, and the display effect and the frame of the product are influenced.
An embodiment of the present invention provides a display substrate, as shown in fig. 3, the display substrate includes a pixel circuit on a substrate, the pixel circuit includes a driving thin film transistor B, a switching thin film transistor C, and a gate driving circuit thin film transistor a,
the active layer of the driving thin film transistor B and the active layer of the switching thin film transistor C are positioned at different layers; and/or
The active layer of the driving thin film transistor B and the active layer of the gate driving circuit thin film transistor A are positioned at different layers.
As shown in fig. 2, in the related art, the display substrate sequentially includes a first flexible substrate 02, a first blocking layer 03, a second flexible substrate 04, a second blocking layer 05, a first buffer layer 06, a first gate insulating layer 07, a second gate insulating layer 08, an interlayer insulating layer 09, a first gate metal layer 12, a second gate metal layer 13, an active layer 11, and a source-drain metal layer 10 on a substrate 01. The active layers 11 of the driving thin film transistor B, the switching thin film transistor C and the gate driving circuit thin film transistor a are arranged on the same layer and material, so that the characteristic requirements of the driving thin film transistor B, the switching thin film transistor C and the gate driving circuit thin film transistor a are difficult to be considered.
In the embodiment of the invention, the active layer of the driving thin film transistor B and the active layer of the switching thin film transistor C and/or the active layer of the gate driving circuit thin film transistor A are positioned at different layers, so that different composition processes can be adopted to form the active layers of the driving thin film transistor and the switching thin film transistor and/or the gate driving circuit thin film transistor, the driving thin film transistor and the switching thin film transistor and/or the gate driving circuit thin film transistor are separately and independently formed, the characteristics of the driving thin film transistor and the process procedures and characteristics of the switching thin film transistor and the gate driving circuit thin film transistor can be free from interference, and further the I of the driving thin film transistor can be reduced on the basis of not influencing the driving capability of the switching thin film transistor and the gate driving circuit thin film transistor on And increasing SS for driving the thin film transistor to improve the display effect of the high mobility Oxide OLED product.
In this embodiment, only the active layer of the driving thin film transistor B and the active layer of the switching thin film transistor C may be located at different layers, so that the active layer of the driving thin film transistor B and the active layer of the switching thin film transistor C may be formed through different composition processes; or, only the active layer of the driving thin film transistor B and the active layer of the gate driving circuit thin film transistor a are located at different layers, so that the active layer of the driving thin film transistor B and the active layer of the gate driving circuit thin film transistor a can be formed through different composition processes; or the active layer of the driving thin film transistor B and the active layer of the switching thin film transistor C are located in different layers, and the active layer of the driving thin film transistor B and the active layer of the gate driving circuit thin film transistor a are located in different layers, so that the active layer of the driving thin film transistor B and the active layer of the switching thin film transistor C can be formed through different composition processes, and the active layer of the driving thin film transistor B and the active layer of the gate driving circuit thin film transistor a can be formed through different composition processes.
In some embodiments, the active layer of the switching thin film transistor and the active layer of the gate driving circuit thin film transistor are arranged in the same layer and the same material. Therefore, the active layer of the switch thin film transistor and the active layer of the grid drive circuit thin film transistor can be formed through one-time composition process, and the manufacture procedure of the display substrate can be simplified.
In this embodiment, the active layers of the driving thin film transistor B, the switching thin film transistor C and the gate driving circuit thin film transistor a may be transparent metal oxide semiconductors.
In some embodiments, the gate insulating layer of the driving thin film transistor has a thickness greater than that of the switching thin film transistor; and/or
The thickness of the gate insulating layer of the driving thin film transistor is larger than that of the gate insulating layer of the gate driving circuit thin film transistor.
By thickening the gate insulating layer of the driving thin film transistor, the I of the driving thin film transistor can be reduced without affecting the driving capability of the switching thin film transistor and the gate driving circuit thin film transistor on And SS of the driving thin film transistor is increased, so that the display effect of the high-mobility Oxide OLED product is improved.
In some embodiments, an on-resistance of the active layer of the driving thin film transistor is greater than an on-resistance of the active layer of the switching thin film transistor; and/or
The on-resistance of the active layer of the driving thin film transistor is greater than that of the active layer of the gate driving circuit thin film transistor.
By increasing the on-resistance of the active layer of the driving thin film transistor, the I of the driving thin film transistor can be reduced without affecting the driving capability of the switching thin film transistor and the grid driving circuit thin film transistor on And further improve the display effect of the Oxide OLED product with high mobility.
In some embodiments, the display substrate includes an interlayer insulating layer located on a side of the active layer of the driving thin film transistor away from the substrate, the interlayer insulating layer includes a first interlayer insulating layer and a second interlayer insulating layer, the first interlayer insulating layer is made of silicon oxide, the second interlayer insulating layer is made of silicon nitride, and the second interlayer insulating layer is located on a side of the first interlayer insulating layer away from the substrate.
In this embodiment, the second interlayer insulating layer is made of silicon nitride and contains H, H in the second interlayer insulating layer can diffuse into the active layer of the driving thin film transistor, and the more H in the second interlayer insulating layer, the more H diffuses into the active layer of the driving thin film transistor, and the I of the driving thin film transistor on The larger the H in the second interlayer insulating layer, the less the H diffused to the active layer of the driving thin film transistor, and the I of the driving thin film transistor on The smaller. Therefore, by the hydrogen content of the second interlayer insulating layer, I of the driving thin film transistor can be adjusted on The size of the thin film transistor can be reduced on the basis of not influencing the driving capability of the thin film transistor of the switch thin film transistor and the thin film transistor of the grid driving circuit on And further improve the display effect of the Oxide OLED product with high mobility.
In some embodiments, the active layer of the driving thin film transistor is processed by an annealing process, the SS of the driving thin film transistor can be increased by the annealing process, and the SS of the driving thin film transistor can be increased on the basis of not influencing the driving capability of the switching thin film transistor and the gate driving circuit thin film transistor, so that the display effect of the high mobility Oxide OLED product is improved.
In some embodiments, to reduce I of the driving TFT on The mobility of the active layer of the driving thin film transistor is smaller than that of the active layer of the switching thin film transistor; and/or
The mobility of the active layer of the driving thin film transistor is smaller than that of the active layer of the gate driving circuit thin film transistor.
The active layer of the driving thin film transistor can use Oxide materials with lower mobility, such as IGZO, and the active layer of the gate driving circuit thin film transistor and the active layer of the off thin film transistor can use Oxide materials with higher mobility, such as ITZO, IGTO and IGZTO.
In some embodiments, to reduce I of the driving TFT on Increasing I of switching thin film transistor on The area of the gate insulating layer of the driving thin film transistor is larger than that of the gate insulating layer of the switching thin film transistor; and/or
To reduce I of driving thin film transistor on Increasing I of gate drive circuit thin film transistor on And the area of the gate insulating layer of the driving thin film transistor is larger than that of the gate insulating layer of the gate driving circuit thin film transistor.
In a specific embodiment, as shown in fig. 3, the display substrate sequentially includes a first flexible substrate 02, a first barrier layer 03, a second flexible substrate 04, a second barrier layer 05, a first buffer layer 06, a first gate insulating layer 07, a second gate insulating layer 08, a second buffer layer 14, a third gate insulating layer 15, a first gate metal layer 12, and a second gate metal layer 13 on a substrate 01. The active layers 11 of the gate driving circuit thin film transistor a and the switch thin film transistor C are made of the same material in the same layer, and the active layer 111 of the driving thin film transistor B and the active layers 11 of the gate driving circuit thin film transistor a and the switch thin film transistor C are located in different layers. The grid of the grid driving circuit thin film transistor A adopts a first grid metal layer 12, and the grid insulating layer adopts a first grid insulating layer 07; the switch thin film transistor C adopts a double-gate structure, a gate electrode adopts a first gate metal layer 12 and a second gate metal layer 13, and a gate insulating layer adopts a first gate insulating layer 07 and a second gate insulating layer 08; the gate electrode of the driving TFT B is made of the second gate metal layer 13, and the gate insulating layer is made of the third gate insulating layer 15, in order to reduce the I of the driving TFT B on And SS of the driving thin film transistor B is increased, the third gate insulating layer 03 is thickened, and the thicknesses of the first gate insulating layer 07 and the second gate insulating layer 08 are both
The thickness of the third gate insulating layer 03 is increased to
By splittingManufacturing a driving thin film transistor B, a gate drive circuit thin film transistor A and a switch thin film transistor C, and reducing the DTFT (i.e. driving thin film transistor) I on the basis of not influencing the driving capability of Oxide STFT (i.e. switch thin film transistor) and GOA TFT (i.e. gate drive circuit thin film transistor) on And increasing the DTFT SS to improve the display effect of the high mobility Oxide OLED product.
As shown in fig. 4, the driving thin film transistor B may have a double gate structure, the gate electrode of the driving thin film transistor B may have the second gate metal layer 13 and the third gate metal layer 16, and the active layer 111 of the driving thin film transistor B may be doting using the third gate metal layer 16 as a mask to make the active layer 111 conductive, in order to reduce I of Oxide DTFT on The I of the DTFT may be reduced by increasing the on-resistance of the active layer 111 using a process method in which the Doping energy and the dose are relatively small without fully conducing the active layer 111 of the DTFT on . For Oxide STFT and GOA TFTs, however, a relatively large energy and dose process is required to fully conduct the active layer 11 to increase the I of the STFT and GOA TFTs on And the driving capability is enhanced. By the method of separately and independently forming Oxide DTFT, Oxide STFT and GOA TFT, the DTFT I is reduced without influencing the driving capability of Oxide STFT and GOA TFT on And increasing the DTFT SS to improve the display effect of the high mobility Oxide OLED product.
As shown in fig. 5, a first inter-sub-layer insulating layer 17 and a second inter-sub-layer insulating layer 18 are provided on the side of the active layer 111 away from the substrate, the first inter-sub-layer insulating layer 17 is made of SiO, and the second inter-sub-layer insulating layer 18 is made of SiN. By adjusting the H content in SiN, the I of Oxide DTFT can be adjusted on Size. The larger the thickness of the second interlayer insulating layer 18 is, the higher the H content is, H escaping from the second interlayer insulating layer 18 is combined with oxygen in the active layer 111, so that the on-resistance of the active layer 111 is reduced, and the I of Oxide DTFT is enabled to be larger on The larger; the smaller the thickness of the second interlayer insulating layer 18, the lower the H content, increasing the on-resistance of the active layer 111, resulting in I of Oxide DTFT on The smaller. By a method of forming Oxide DTFT separately from Oxide STFT and GOA TFTOn the basis of influencing the driving capability of Oxide STFT and GOA TFT, DTFT I is reduced on The display effect of the Oxide OLED product with high mobility is improved.
As shown in fig. 6, after the interlayer insulating layer is formed, a via hole 19 exposing the active layer 111 may be formed, and the active layer 111 may be annealed through the via hole 19 at a temperature of 300 to 400 ℃. Thereafter, as shown in fig. 7, a via hole exposing the active layer 11 is formed without annealing. Therefore, the SS of the Oxide DTFT can be increased through an annealing process, and the SS of the Oxide STFT and the Oxide GOA TFT is not influenced because the via holes of the Oxide STFT and the Oxide GOA TFT are not opened during annealing treatment. The method of separately and independently forming Oxide DTFT, Oxide STFT and GOA TFT improves the display effect of the high mobility Oxide OLED product by increasing DTFT SS on the basis of not influencing the driving capability of the Oxide STFT and GOA TFT.
As shown in fig. 8, the source and drain electrodes of the driving thin film transistor B, the gate driving circuit thin film transistor a and the switching thin film transistor C may be formed using a source-drain metal layer 10.
As shown in FIG. 9, since Oxide DTFT is formed separately from Oxide STFT and GOA TFT, I of Oxide STFT and Oxide GOA TFT is increased on When the first gate metal layer 12 is etched, the first gate insulating layer 07 may be etched, only the first gate insulating layer 07 right under the first gate metal layer 12 is reserved as the gate insulating layer of Oxide STFT and Oxide GOA TFT, and the third gate insulating layer 15 of Oxide DTFT is completely reserved, so that the I of Oxide DTFT may be reduced on 。
In the above embodiment, the active layer 111 of Oxide DTFT is located on the side of the active layers 11 of Oxide STFT and Oxide GOA TFT away from the substrate. As shown in fig. 10, the active layer 111 of the Oxide DTFT may also be located on the side of the active layers 11 of the Oxide STFT and Oxide GOA TFTs close to the substrate. The gate insulating layer of the Oxide DTFT comprises a first gate insulating layer 07 and a second gate insulating layer 08, and a first gate metal layer 12 and a second gate metal layer 13 are adopted as a gate; the gate insulating layer of Oxide STFT and Oxide GOA TFT comprises a third gate insulating layer 15, and the gate adopts a third gate metal layer 16 and a second gate metal layer 13. To reduce Oxide DTFTI on And increasing SS of Oxide DTFT requires thickening the first gate insulating layer 07 so that the thickness of the first gate insulating layer 07 is larger than that of the third gate insulating layer 15.
In this embodiment, in order to adjust the size of the storage capacitor of the pixel circuit and meet the design requirement, two electrode plates of the storage capacitor, which are oppositely disposed, may be selected from two of the following items: a first gate metal layer 12, a second gate metal layer 13, a third gate metal layer 16, a conductive active layer 11, and a conductive active layer 111. The storage capacitor may be located on a side of the Oxide DTFT close to the substrate base plate, or may be located on a side of the Oxide DTFT far from the substrate base plate.
Embodiments of the present invention also provide a display device, including the display substrate as described above.
The display device includes but is not limited to: radio frequency unit, network module, audio output unit, input unit, sensor, display unit, user input unit, interface unit, memory, processor, and power supply. It will be appreciated by those skilled in the art that the above described configuration of the display device does not constitute a limitation of the display device, and that the display device may comprise more or less of the components described above, or some components may be combined, or a different arrangement of components. In the embodiment of the present invention, the display device includes, but is not limited to, a display, a mobile phone, a tablet computer, a television, a wearable electronic device, a navigation display device, and the like.
The display device may be: the display device comprises a television, a display, a digital photo frame, a mobile phone, a tablet personal computer and any other product or component with a display function, wherein the display device further comprises a flexible circuit board, a printed circuit board and a back plate.
The embodiment of the invention also provides a manufacturing method of a display substrate, the display substrate comprises a pixel circuit positioned on a substrate, the pixel circuit comprises a driving thin film transistor, a switch thin film transistor and a grid driving circuit thin film transistor, and the manufacturing method comprises the following steps:
manufacturing an active layer of the driving thin film transistor and an active layer of the switching thin film transistor through different composition processes; and/or
And manufacturing an active layer of the driving thin film transistor and an active layer of the gate driving circuit thin film transistor through different patterning processes.
In the embodiment of the invention, different composition processes can be adopted to form the active layers of the driving thin film transistor and the switching thin film transistor and/or the grid driving circuit thin film transistor, the driving thin film transistor and the switching thin film transistor and/or the grid driving circuit thin film transistor are separately and independently formed, so that the characteristics of the driving thin film transistor and the process procedures and characteristics of the switching thin film transistor and the grid driving circuit thin film transistor are not interfered, and further, the driving capability of the switching thin film transistor and the grid driving circuit thin film transistor is not influenced by reducing the I of the driving thin film transistor on And increasing SS of the driving thin film transistor to improve the display effect of the high mobility Oxide OLED product.
In this embodiment, the active layer of the driving thin film transistor B and the active layer of the switching thin film transistor C may be formed only by different patterning processes, or the active layer of the driving thin film transistor B and the active layer of the gate driving circuit thin film transistor a may be formed only by different patterning processes, or the active layer of the driving thin film transistor B and the active layer of the switching thin film transistor C may be formed by different patterning processes, and the active layer of the driving thin film transistor B and the active layer of the gate driving circuit thin film transistor a may be formed by different patterning processes.
In some embodiments, the method of making further comprises:
and forming an active layer of the switching thin film transistor and an active layer of the gate driving circuit thin film transistor through a one-time composition process. Therefore, the active layer of the switch thin film transistor and the active layer of the grid drive circuit thin film transistor can be formed through one-time composition process, and the manufacture procedure of the display substrate can be simplified.
In this embodiment, the active layers of the driving thin film transistor B, the switching thin film transistor C and the gate driving circuit thin film transistor a may be transparent metal oxide semiconductors.
In a specific embodiment, as shown in fig. 3, when the display substrate is manufactured, a first flexible substrate 02, a first barrier layer 03, a second flexible substrate 04, a second barrier layer 05, a first buffer layer 06, an active layer 11, a first gate insulating layer 07, a first gate metal layer 12, a second gate insulating layer 08, a second gate metal layer 13, a second buffer layer 14, and a third gate insulating layer 15 are sequentially formed on a substrate 01. The active layers 11 of the gate driving circuit thin film transistor a and the switch thin film transistor C are made of the same material in the same layer and are formed through a one-time composition process, and the active layer 111 of the driving thin film transistor B and the active layers 11 of the gate driving circuit thin film transistor a and the switch thin film transistor C are located in different layers and are formed through different composition processes. The grid electrode of the grid electrode driving circuit thin film transistor A adopts a first grid metal layer 12, and the grid insulating layer adopts a first grid insulating layer 07; the switch thin film transistor C adopts a double-gate structure, a gate electrode adopts a first gate metal layer 12 and a second gate metal layer 13, and a gate insulating layer adopts a first gate insulating layer 07 and a second gate insulating layer 08; the gate electrode of the driving TFT B is made of the second gate metal layer 13, and the gate insulating layer is made of the third gate insulating layer 15, in order to reduce the I of the driving TFT B on And SS of the driving thin film transistor B is increased, the third gate insulating layer 03 is thickened, and the thicknesses of the first gate insulating layer 07 and the second gate insulating layer 08 are the same
The thickness of the third gate insulating layer 03 is increased to
By separately manufacturing the driving thin film transistor B, the gate driving circuit thin film transistor A and the switching thin film transistor C, on the basis of not influencing the driving capability of Oxide STFT (namely, switching thin film transistor) and GOA TFT (namely, gate driving circuit thin film transistor), the DTFT (namely, driving thin film transistor) I is reduced on And increasing the DTFT SS to improve the display effect of the high mobility Oxide OLED product.
As shown in FIG. 4, the driving TFT B may have a double gate structureThe gate electrode of the driving thin film transistor B may be formed using the second gate metal layer 13 and the third gate metal layer 16, and the active layer 111 of the driving thin film transistor B may be Doping using the third gate metal layer 16 as a mask to make the active layer 111 conductive in order to reduce I of Oxide DTFT on The I of the DTFT may be reduced by increasing the on-resistance of the active layer 111 using a process method in which the Doping energy and the dose are relatively small without fully conducing the active layer 111 of the DTFT on . For Oxide STFT and GOA TFTs, however, a relatively large energy and dose process is required to fully conduct the active layer 11 to increase the I of the STFT and GOA TFTs on And the driving capability is enhanced. By the method of separately and independently forming Oxide DTFT, Oxide STFT and GOA TFT, the DTFT I is reduced without influencing the driving capability of Oxide STFT and GOA TFT on And increasing the DTFT SS to improve the display effect of the high mobility Oxide OLED product.
As shown in fig. 5, a first inter-sub-layer insulating layer 17 and a second inter-sub-layer insulating layer 18 are formed on the side of the active layer 111 away from the substrate, the first inter-sub-layer insulating layer 17 is made of SiO, and the second inter-sub-layer insulating layer 18 is made of SiN. By adjusting the H content in SiN, the I of Oxide DTFT can be adjusted on Size. The larger the thickness of the second interlayer insulating layer 18 is, the higher the H content is, H escaping from the second interlayer insulating layer 18 is combined with oxygen in the active layer 111, so that the on-resistance of the active layer 111 is reduced, and the I of Oxide DTFT is enabled to be larger on The larger; the smaller the thickness of the second interlayer insulating layer 18, the lower the H content, increasing the on-resistance of the active layer 111, resulting in I of Oxide DTFT on The smaller. Through the method of separately and independently forming Oxide DTFT, Oxide STFT and GOA TFT, on the basis of not influencing the driving capability of Oxide STFT and GOA TFT, DTFT I is reduced on The display effect of the Oxide OLED product with high mobility is improved.
As shown in fig. 6, after the interlayer insulating layer is formed, a via hole 19 exposing the active layer 111 may be formed, and the active layer 111 may be annealed through the via hole 19 at a temperature of 300 to 400 ℃. Thereafter, as shown in fig. 7, a via hole exposing the active layer 11 is formed without annealing. Therefore, the SS of the Oxide DTFT can be increased through an annealing process, and the SS of the Oxide STFT and the Oxide GOA TFT is not influenced because the via holes of the Oxide STFT and the Oxide GOA TFT are not opened during the annealing process. By the method of separately and independently forming Oxide DTFT, Oxide STFT and GOA TFT, the display effect of the high-mobility Oxide OLED product is improved by increasing DTFT SS on the basis of not influencing the driving capability of the Oxide STFT and GOA TFT.
As shown in fig. 8, the source and drain electrodes of the driving thin film transistor B, the gate driving circuit thin film transistor a, and the switching thin film transistor C are formed using the source-drain metal layer 10.
As shown in FIG. 9, since Oxide DTFT is formed separately from Oxide STFT and GOA TFT, I of Oxide STFT and Oxide GOA TFT is increased on When the first gate metal layer 12 is etched, the first gate insulating layer 07 may be etched, only the first gate insulating layer 07 right under the first gate metal layer 12 is reserved as the gate insulating layer of Oxide STFT and Oxide GOA TFT, and the third gate insulating layer 15 of Oxide DTFT is completely reserved, so that the I of Oxide DTFT may be reduced on 。
In the above embodiment, the active layer 111 of Oxide DTFT is located on the side of the active layers 11 of Oxide STFT and Oxide GOA TFT away from the substrate. As shown in fig. 10, the active layer 111 of Oxide DTFT may also be located on the side of the active layers 11 of Oxide STFT and Oxide GOA TFT close to the substrate. The gate insulating layer of the Oxide DTFT comprises a first gate insulating layer 07 and a second gate insulating layer 08, and a first gate metal layer 12 and a second gate metal layer 13 are adopted as a gate; the gate insulating layer of Oxide STFT and Oxide GOA TFT comprises a third gate insulating layer 15, and the gate adopts a third gate metal layer 16 and a second gate metal layer 13. To reduce I of Oxide DTFT on And increasing SS of Oxide DTFT requires thickening the first gate insulating layer 07 so that the thickness of the first gate insulating layer 07 is larger than that of the third gate insulating layer 15.
It should be noted that, in the present specification, all the embodiments are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments. In particular, for the embodiments, since they are substantially similar to the product embodiments, the description is simple, and the relevant points can be referred to the partial description of the product embodiments.
Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The use of "first," "second," and similar terms in this disclosure is not intended to indicate any order, quantity, or importance, but rather is used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.
It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.
In the foregoing description of embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present disclosure, and all the changes or substitutions should be covered within the scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.
Claims (12)
1. A display substrate comprising pixel circuits on a substrate, the pixel circuits comprising drive, switch and gate drive circuit thin film transistors,
the active layer of the driving thin film transistor and the active layer of the switching thin film transistor are positioned on different layers; and/or
The active layer of the driving thin film transistor and the active layer of the grid driving circuit thin film transistor are positioned on different layers.
2. The display substrate of claim 1, wherein the active layer of the switching thin film transistor and the active layer of the gate driver circuit thin film transistor are disposed in the same layer and the same material.
3. The display substrate of claim 1,
the thickness of the gate insulating layer of the driving thin film transistor is greater than that of the gate insulating layer of the switching thin film transistor; and/or
The thickness of the gate insulating layer of the driving thin film transistor is larger than that of the gate insulating layer of the gate driving circuit thin film transistor.
4. The display substrate of claim 1,
the on-resistance of the active layer of the driving thin film transistor is greater than that of the active layer of the switching thin film transistor; and/or
The on-resistance of the active layer of the driving thin film transistor is greater than that of the gate driving circuit thin film transistor.
5. The display substrate according to claim 1, wherein the display substrate comprises an interlayer insulating layer located on a side of the active layer of the driving thin film transistor, which is away from the substrate, and the interlayer insulating layer comprises a first interlayer insulating layer and a second interlayer insulating layer, the first interlayer insulating layer is made of silicon oxide, the second interlayer insulating layer is made of silicon nitride, and the second interlayer insulating layer is located on a side of the first interlayer insulating layer, which is away from the substrate.
6. The display substrate according to claim 1, wherein the active layer of the driving thin film transistor is subjected to an annealing process.
7. The display substrate of claim 1,
the mobility of the active layer of the driving thin film transistor is less than that of the active layer of the switching thin film transistor; and/or
The mobility of the active layer of the driving thin film transistor is less than that of the gate driving circuit thin film transistor.
8. The display substrate of claim 1,
the area of the gate insulating layer of the driving thin film transistor is larger than that of the gate insulating layer of the switching thin film transistor; and/or
The area of the gate insulating layer of the driving thin film transistor is larger than that of the gate insulating layer of the gate driving circuit thin film transistor.
9. The display substrate according to claim 1, wherein the storage capacitor of the pixel circuit comprises two oppositely arranged plates, and the plates adopt a gate electrode of a thin film transistor or the conductive active layer.
10. A display device comprising the display substrate according to any one of claims 1 to 9.
11. A manufacturing method of a display substrate, the display substrate comprising a pixel circuit on a substrate, the pixel circuit comprising a driving thin film transistor, a switching thin film transistor and a gate driving circuit thin film transistor, the manufacturing method comprising:
manufacturing an active layer of the driving thin film transistor and an active layer of the switching thin film transistor through different composition processes; and/or
And manufacturing an active layer of the driving thin film transistor and an active layer of the gate driving circuit thin film transistor through different patterning processes.
12. The method of manufacturing a display substrate according to claim 11, further comprising:
and forming an active layer of the switching thin film transistor and an active layer of the gate driving circuit thin film transistor through a one-time composition process.
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