CN111785734A - Back plate system - Google Patents
Back plate system Download PDFInfo
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- CN111785734A CN111785734A CN202010580560.4A CN202010580560A CN111785734A CN 111785734 A CN111785734 A CN 111785734A CN 202010580560 A CN202010580560 A CN 202010580560A CN 111785734 A CN111785734 A CN 111785734A
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- insulating layer
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- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 229920001721 polyimide Polymers 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 239000010409 thin film Substances 0.000 abstract description 18
- 239000010408 film Substances 0.000 description 19
- 238000009413 insulation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses a backboard system, which comprises a TFT backboard, wherein the TFT backboard comprises a substrate, a buffer layer is deposited on the substrate, a first shading layer and a second shading layer are deposited on the buffer layer, an insulating layer is deposited on the first shading layer and the second shading layer, a first active layer and a second active layer which are arranged between the first shading layer and the second shading layer are deposited on the insulating layer, a first source electrode and a first drain electrode are formed on the first active layer, a second source electrode and a second drain electrode are respectively formed on the second active layer, a grid insulating layer is deposited on the first active layer and the second active layer, a concave part is arranged on the grid insulating layer, a first grid electrode and a second grid electrode are formed on the grid insulating layer, the first grid electrode is arranged between the first source electrode and the first drain electrode, and the second grid electrode is arranged between the second source electrode and the second drain electrode; the back plate system has good moisture resistance and is used for improving the quality of the thin film transistor.
Description
Technical Field
The invention belongs to the field of display, and particularly relates to a back plate system.
Background
Flat panel display devices have advantages of high image quality, power saving, thin body, and wide application range, and are widely used in various consumer electronics products such as mobile phones, televisions, personal digital assistants, digital cameras, notebook computers, and desktop computers, and are becoming the mainstream of display devices.
The conventional flat display device mainly includes a Liquid Crystal Display (LCD) and an Organic Light Emitting Diode (OLED) display. An organic light emitting diode display (OLED) is widely popularized because it has excellent characteristics of self-luminescence, no need of a backlight source, high contrast, thin thickness, wide viewing angle, fast response speed, applicability to a flexible panel, wide use temperature range, simple structure, and the like.
In an organic light emitting diode display device (OLED), a Thin Film Transistor (TFT) drives an organic light emitting diode to emit light, thereby displaying a corresponding picture. As can be seen, a Thin Film Transistor (TFT) is a key component in an organic light emitting diode display device (OLED), and the Thin Film Transistor (TFT) directly determines the quality of the organic light emitting diode display device (OLED).
In the prior art, the problems of water vapor and the like can occur in the use of a Thin Film Transistor (TFT), and the quality of an organic light-emitting diode display device is seriously influenced.
Disclosure of Invention
The present invention provides a backplane system, and a TFT backplane system with moisture protection for improving the quality of thin film transistors.
The invention discloses a backboard system, which comprises a TFT backboard, wherein the TFT backboard comprises a substrate, a buffer layer is deposited on the substrate, a first shading layer and a second shading layer are deposited on the buffer layer, an insulating layer is deposited on the first shading layer and the second shading layer, a first active layer and a second active layer which are arranged between the first shading layer and the second shading layer are deposited on the insulating layer, the first active layer comprises a first conductive groove in the middle and first conductive parts arranged at two ends of the first conductive groove, a first source electrode and a first drain electrode are respectively formed on the two first conductive parts, the second active layer comprises a second conductive groove in the middle and second conductive parts arranged at two ends of the second conductive groove, a second source electrode and a second drain electrode are respectively formed on the two second conductive parts, a grid insulating layer is deposited on the first active layer and the second active layer, a concave part is arranged on the grid insulating layer, the grid electrode insulating layer is provided with a first grid electrode and a second grid electrode, the first grid electrode is arranged between the first source electrode and the first drain electrode, the second grid electrode is arranged between the second source electrode and the second drain electrode, the insulating layer is deposited on the grid electrode insulating layer, and the passivation layer is deposited on the insulating layer.
Preferably, the substrate is a glass substrate, a yellow polyimide film is coated on the glass substrate, and the buffer layer is deposited on the yellow polyimide film.
Preferably, the buffer layer comprises a silicon nitride film, a silicon oxide film and an aluminum oxide film which are deposited in sequence, and the thickness of the silicon nitride film and the silicon oxide film is
The thickness of the aluminum oxide film is
Preferably, the first active layer and the second active layer are respectively disposed above the first light shielding layer and the second light shielding layer.
Preferably, the passivation layer is made of silicon oxide or silicon nitride material and has the thickness of
Two through holes are formed in the passivation layer, and the first drain electrode and the second drain electrode are exposed out of the two through hole positions respectively.
The backboard system of the technical scheme of the invention has the beneficial effects that: by adding the buffer layer, the TFT backboard has good moisture resistance.
Drawings
Fig. 1 is a schematic structural diagram of a backplane system according to the technical solution of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. The embodiments of the present invention have been presented for purposes of illustration and description, and are not intended to be exhaustive or limited to the invention in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiment was chosen and described in order to best explain the principles of the invention and the practical application, and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated.
As shown in fig. 1, a backplane system according to the present invention includes a TFT backplane, where the TFT backplane includes a substrate 1. The substrate 1 is a glass substrate coated with a yellow polyimide film. The yellow polyimide film has good heat resistance, and the practical yellow polyimide film is coated on the glass substrate to improve the heat resistance of the glass substrate, so that the glass basically has certain heat insulation property.
A buffer layer 2 is deposited on a substrate 1. The buffer layer 2 includes a silicon nitride film 21, a silicon oxide film 22, and an aluminum oxide film 23 deposited in this order. The silicon nitride film 21 and the silicon oxide film 22 are both thick
The thickness of the alumina film 23 is
The arrangement of the silicon nitride film 21 increases the waterproof performance of the buffer layer 2, and the silicon nitride film 21 has good adhesion and is not easy to peel off, so that the silicon nitride film 21 and the yellow polyimide film have good adhesion, and the deposition effect of the buffer layer 2 is improved. The alumina film 23 is compact in texture, can fill all areas with certain defects, is high in coverage, improves the water blocking effect of the silicon nitride film 21 of the buffer layer 2, and enables the buffer layer 2 to have good water vapor prevention capacity.
The first light-shielding layer 3 and the second light-shielding layer 31 are deposited on the buffer layer 2, that is, a light-shielding thin film is deposited on the buffer layer 2 and patterning is performed using a Mask (Mask) as a tool to form the first light-shielding layer 3 and the second light-shielding layer 31. The first light-shielding layer 3 and the second light-shielding layer 31 are made of opaque metal light-shielding film material such as molybdenum. The first and second light shielding layers 3 and 31 are used to shield the first and second active layers 5 and 10 above them, respectively. An insulating layer 4 is deposited on the first and second light shielding layers 3 and 31. On the insulating layer 4, two first active layers 5 and two second active layers 10 are deposited, which are arranged between them. The insulating layer 4 is a metal oxide film.
The first active layer 5 includes a first conductive trench in the middle and first conductive portions disposed at both ends of the first conductive trench. A first source 143 and a first drain 144 are formed on the two first conductive portions, respectively. The second active layer 10 includes a second conductive trench 102 in the middle and second conductive portions 101 disposed at both ends of the second conductive trench 102. A second source electrode 141 and a second drain electrode 142 are formed on the two second conductive portions 101, respectively.
In the above technical solution, the first active layer 5, the first source electrode 143, and the first drain electrode 144 form a switching thin film transistor, and the second active layer 10, the second source electrode 141, and the second drain electrode 142 form a driving thin film transistor. The switch thin film transistor is used for controlling the on-off of the driving thin film transistor, the organic light emitting diode is driven to emit light by current generated when the driving thin film transistor is in a saturated state, and different driving currents are generated by inputting different gray scale voltages to the driving thin film transistor to realize panel gray scale control. The sub-threshold swing (S factor) of the driving tft will directly affect the gray scale switching performance of the display panel. The subthreshold swing is a performance index for measuring the mutual conversion rate between the on state and the off state of the transistor, and represents the variation of gate voltage required for ten times of source-drain current variation, and generally, the smaller the subthreshold swing (S factor) is, the faster the on-off rate of gray scale is.
A gate insulating layer 6 is deposited on the first and second active layers 5 and 10, the gate insulating layer 6 being provided with a recess 11 on the first active layer 5. The recess 11 is provided so that the thickness of the gate insulating layer 6 corresponding to the driving thin film transistor is smaller than the thickness of the gate insulating layer corresponding to the driving thin film transistor. Compared with the method for sequentially manufacturing two layers of gate insulation layers in the prior art, the method for forming the thickness difference on the gate insulation layer 6 simplifies the manufacturing process of the TFT backboard, reduces the number of manufacturing processes, reduces the thickness of the gate insulation layer of the driving thin film transistor while ensuring the thickness of the gate insulation layer 6 of the switching thin film transistor to be unchanged, reduces the sub-threshold swing of the driving thin film transistor, and improves the gray scale switching and control performance of the AMOLED panel.
The gate insulating layer 6 has a first gate electrode 12 and a second gate electrode 13 formed thereon, and the first gate electrode 12 is interposed between the first source electrode 143 and the first drain electrode 144. First, theThe second gate electrode 13 is interposed between the second source electrode 141 and the second drain electrode 142. An insulating layer 7 is deposited on the gate insulating layer 6 and a passivation layer 8 is deposited on the insulating layer 7. The passivation layer 8 is made of silicon oxide or silicon nitride material with the thickness of
Two via holes 9 are formed on the passivation layer 8, and the first drain electrode 144 and the second drain electrode 142 are exposed at the two via holes, respectively.
It is to be understood that the described embodiments are merely a few embodiments of the invention, and not all embodiments. All other embodiments, which can be derived by one of ordinary skill in the art and related arts based on the embodiments of the present invention without any creative effort, shall fall within the protection scope of the present invention. Structures, devices, and methods of operation not specifically described or illustrated herein are generally practiced in the art without specific recitation or limitation.
Claims (5)
1. A backboard system comprises a TFT backboard, and is characterized in that the TFT backboard comprises a substrate, a buffer layer is deposited on the substrate, a first shading layer and a second shading layer are deposited on the buffer layer, an insulating layer is deposited on the first shading layer and the second shading layer, a first active layer and a second active layer are deposited on the insulating layer and arranged between the first active layer and the second active layer, the first active layer comprises a first conductive groove in the middle and first conductive parts arranged at two ends of the first conductive groove, a first source electrode and a first drain electrode are respectively formed on the two first conductive parts, the second active layer comprises a second conductive groove in the middle and second conductive parts arranged at two ends of the second conductive groove, a second source electrode and a second drain electrode are respectively formed on the two second conductive parts, a grid insulating layer is deposited on the first active layer and the second active layer, a concave part is arranged on the grid insulating layer, the grid electrode insulating layer is provided with a first grid electrode and a second grid electrode, the first grid electrode is arranged between the first source electrode and the first drain electrode, the second grid electrode is arranged between the second source electrode and the second drain electrode, the insulating layer is deposited on the grid electrode insulating layer, and the passivation layer is deposited on the insulating layer.
2. The backplane system according to claim 1, wherein the substrate is a glass substrate coated with a yellow polyimide film, and wherein the buffer layer is deposited on the yellow polyimide film.
3. The backplane system according to claim 1, wherein the buffer layer comprises a silicon nitride film, a silicon oxide film and an aluminum oxide film deposited in sequence, the silicon nitride film and the silicon oxide film having a thickness of
The thickness of the aluminum oxide film is
4. The backplane system of claim 1, wherein the first and second active layers are disposed over the first and second light shielding layers, respectively.
5. The backplane system according to claim 1, wherein the passivation layer is made of silicon oxide or silicon nitride and has a thickness of
Two through holes are formed in the passivation layer, and the first drain electrode and the second drain electrode are exposed out of the two through hole positions respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010580560.4A CN111785734A (en) | 2020-06-23 | 2020-06-23 | Back plate system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010580560.4A CN111785734A (en) | 2020-06-23 | 2020-06-23 | Back plate system |
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| Publication Number | Publication Date |
|---|---|
| CN111785734A true CN111785734A (en) | 2020-10-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010580560.4A Pending CN111785734A (en) | 2020-06-23 | 2020-06-23 | Back plate system |
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| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117525090A (en) * | 2024-01-05 | 2024-02-06 | 惠科股份有限公司 | Array substrate preparation method, array substrate, display panel and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150069335A1 (en) * | 2013-09-10 | 2015-03-12 | Shenzhen China Star Optoelectronics Technology Co. Ltd. | Active organic electroluminescence device back panel and manufacturing method thereof |
| CN104659285A (en) * | 2015-01-20 | 2015-05-27 | 深圳市华星光电技术有限公司 | TFT backboard manufacturing method and structure suitable for AMOLED |
| US20160064421A1 (en) * | 2014-08-29 | 2016-03-03 | Lg Display Co., Ltd. | Thin film transistor substrate and display device using the same |
| US20160063924A1 (en) * | 2014-08-29 | 2016-03-03 | Lg Display Co., Ltd. | Thin film transistor substrate and display using the same |
| CN108493195A (en) * | 2018-03-29 | 2018-09-04 | 深圳市华星光电半导体显示技术有限公司 | The production method of flexible TFT backplate and flexible TFT backplate |
| US20190067403A1 (en) * | 2017-08-24 | 2019-02-28 | Boe Technology Group Co., Ltd. | Back plate and manufacturing method thereof |
| CN109872998A (en) * | 2017-12-04 | 2019-06-11 | 京东方科技集团股份有限公司 | A kind of array substrate, preparation method, display panel and display device |
| CN110518018A (en) * | 2019-08-14 | 2019-11-29 | 深圳市华星光电半导体显示技术有限公司 | Array substrate with and preparation method thereof |
-
2020
- 2020-06-23 CN CN202010580560.4A patent/CN111785734A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150069335A1 (en) * | 2013-09-10 | 2015-03-12 | Shenzhen China Star Optoelectronics Technology Co. Ltd. | Active organic electroluminescence device back panel and manufacturing method thereof |
| US20160064421A1 (en) * | 2014-08-29 | 2016-03-03 | Lg Display Co., Ltd. | Thin film transistor substrate and display device using the same |
| US20160063924A1 (en) * | 2014-08-29 | 2016-03-03 | Lg Display Co., Ltd. | Thin film transistor substrate and display using the same |
| CN104659285A (en) * | 2015-01-20 | 2015-05-27 | 深圳市华星光电技术有限公司 | TFT backboard manufacturing method and structure suitable for AMOLED |
| US20190067403A1 (en) * | 2017-08-24 | 2019-02-28 | Boe Technology Group Co., Ltd. | Back plate and manufacturing method thereof |
| CN109872998A (en) * | 2017-12-04 | 2019-06-11 | 京东方科技集团股份有限公司 | A kind of array substrate, preparation method, display panel and display device |
| CN108493195A (en) * | 2018-03-29 | 2018-09-04 | 深圳市华星光电半导体显示技术有限公司 | The production method of flexible TFT backplate and flexible TFT backplate |
| CN110518018A (en) * | 2019-08-14 | 2019-11-29 | 深圳市华星光电半导体显示技术有限公司 | Array substrate with and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117525090A (en) * | 2024-01-05 | 2024-02-06 | 惠科股份有限公司 | Array substrate preparation method, array substrate, display panel and display device |
| CN117525090B (en) * | 2024-01-05 | 2024-05-03 | 惠科股份有限公司 | Array substrate preparation method, array substrate, display panel and display device |
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