CN115000020B - 一种可拉伸阵列基板制作方法 - Google Patents
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Abstract
本发明涉及一种可拉伸阵列基板制作方法,其包括以下步骤:在玻璃基板上涂布柔性衬底材料制成柔性基板;柔性基板上阵列分布第二弹性区和设在第二弹性区间隙的第一弹性区,第一弹性区和第二弹性区通过喷墨打印、转印、纳米压印形变材料制备出类水波纹形状或凹坑形状的高低结构,第一弹性区的纵深比第二弹性区的纵深大;在第二弹性区上覆盖刚性层;第一弹性区表面沉积第一金属层,通过光刻工艺形成驱动信号连接线和数据信号连接线;刚性层上依次沉积水氧阻隔层以及缓冲层,平坦化第二弹性区造成的表面起伏;缓冲层上依次形成薄膜晶体管和有机发光器件,采用以上技术方案制成的拉伸阵列基板的保护像素区器件、驱动、信号线稳定性,不会受到拉伸破坏。
Description
技术领域
本发明涉及面板技术领域,具体涉及了一种可拉伸阵列基板制作方法。
背景技术
随着显示技术发展,屏幕,对于电子产品来说,是与消费者沟通的最主要窗口。近几年,随着柔性显示、透明显示等技术的发展,屏幕不再局限于形态、传统显示的限制,让其可以有更丰富的发展空间。能翻转、会卷曲、可伸缩、可透视,多样的新屏幕形态逐渐应用于手机、电视以及显示器等多种电子产品中。
目前,已投入商用的可弯曲(Bendable)、可折叠(Foldable)、可卷曲(Rollable)等柔性显示屏,只能在特定部位或特定方向进行变形,可以使用的领域非常有限。与之相反,像橡皮筋一样具有弹性的可伸缩显示屏,可以避免画面歪曲,实现自由形态,因此被称为柔性显示屏的最高阶段,也被视作最适合IoT,5G及无人驾驶汽车时代的次世代显示。
由于在屏幕拉伸时,面板中薄膜晶体管、显示器件、驱动、信号线路容易受到形变将造成衬底与其上方功能薄膜之间受到剪切力的效果,从而导致衬底上方TFT或发光器件性能恶化以致于脱落。
发明内容
针对现有技术的不足,本发明提供一种保护像素区器件、驱动、信号线稳定性,不会受到拉伸破坏的可拉伸阵列基板制作方法。
本发明的一种可拉伸阵列基板制作方法,采用以下技术方案:其包括以下步骤:
S1、在玻璃基板上涂布柔性衬底材料制成柔性基板;
S2、柔性基板上阵列分布第二弹性区和设在第二弹性区间隙的第一弹性区,第一弹性区和第二弹性区通过喷墨打印、转印、纳米压印形变材料制备出类水波纹形状或凹坑形状的高低结构,所述第一弹性区的纵深比第二弹性区的纵深大;
S3、在第二弹性区上覆盖刚性层,所述刚性层采用有机材料制备,或使用无机材料利用镀膜-曝光-显影-蚀刻方式进行制备;
S4、第一弹性区表面沉积第一金属层,通过光刻工艺形成驱动信号连接线和数据信号连接线,驱动信号连接线和数据信号连接线的两端与相邻的两个刚性层上表面接触,或与相邻的两个刚性层下表面接触,并在刚性层制出通孔露出驱动信号连接线和数据信号连接线;
S5、刚性层上依次沉积水氧阻隔层以及缓冲层,平坦化第二弹性区造成的表面起伏,并在水氧阻隔层以及缓冲层制出通孔露出驱动信号连接线和数据信号连接线两端,缓冲层在柔性基板的投影面积小于或等于刚性层覆盖区域;
S6、缓冲层上沉积第二金属层,通过光刻工艺形成单个像素区的内驱动信号线、信号桥接线以及TFT器件的栅极,内驱动信号线分别通过通孔与第一金属层的驱动信号连接线和数据信号连接线连接,内驱动信号线之间通过信号桥接线连接;
S7、第二金属层覆盖栅极绝缘层,在栅极绝缘层上对应TFT器件的栅极覆盖有源层,图案化有源层,栅极绝缘层制出通孔露出第二金属层;
S8、栅极绝缘层和有源层上沉积第三金属层,通过光刻工艺形成在有源层的两端TFT源极和TFT漏极以及栅极绝缘层上的数据信号线、阴极信号线,所述数据信号线通过通孔与第二金属层连接;
S9、第三金属层覆盖钝化层,钝化层上对应TFT漏极和阴极信号线蚀刻出通孔;
S10、钝化层上涂布有机绝缘材料形成平坦层,并对应钝化层上的通孔蚀刻出相应的通孔;
S11、平坦层上沉积光刻工艺形成OLED器件的阳极和阴极信号线,所述阳极通过平坦层和钝化层的通孔与第三金属层的漏极连接,所述阴极信号线通过平坦层和钝化层的通孔与第三金属层的阴极信号线连接;
S12、第四金属层上覆盖有像素定义层,并显影出RGB图案开口露出OLED器件的阳极上表面,显影开口露出第四金属层阴极信号线;
S13、在RGB图案开口上蒸镀有机发光材料;
S14、在像素定义层上蒸镀透明导电材料制备OLED器件阴极,所述OLED器件阴极具有引脚,所述引脚穿过像素定义层的开口与第四金属层阴极信号线连接。
进一步,所述步骤S1中的柔性衬底材料为PET、PEN、聚酰亚胺材料中的任意一种。
进一步,所述步骤S2中的形变材料为聚酰亚胺或聚二甲基硅氧烷。
进一步,所述步骤S3中的所述有机材料为聚酰亚胺、聚丙酸酯、聚醋酸酯中的任意一种;所述无机材料为氧化硅、氮化硅、氮氧化硅、氧化铝、氧化钛中的任意一种。
进一步,所述步骤S4中的所述第一金属层由一层或多层导电材料叠加制成,所述导电材料为铝、钼、钛、镍、铜、银中的任意一种或多种,或氧化钛、石墨烯、纳米银中的任意一种,或掺杂导电颗粒的有机材料导电膜。
进一步,所述步骤S5中的所述缓冲层材质为聚合物材料、有机光敏材料和无机材料中的任意一种;所述聚合物材料为PE、PEN、PI中的任意一种;所述无机材料为SiOx、SiNx、氧化铝、氧化钛的任意一种;所述水氧阻隔层为SiOx、SiNx、氧化铝、氧化钛的任意一种。
进一步,所述步骤S6和步骤S8中所述第二金属层和第二金属层为铝、钼、钛、镍、铜、银中的任意一种金属或多种合金,或为加层式结构,所述加层式结构为钛/铝/钛、钛/铝、铝/钼、钼/铝/钼中的任意一种。
进一步,所述步骤S7和步骤S9中所述栅极绝缘层和钝化层材料为无机氧化物或绝缘性质的化合物,所述无机氧化物为SiOx、SiNx、氧化铝、氧化钛、氧化铝中的任意一种;所述有源层为金属氧化物半导体材料或Si系材料,所述金属氧化物半导体材料为ZnO、IGZO、IGZTO、ITZO、Pr-IZO中的任意一种,所述 Si系材料为非晶硅a-Si或低温多晶硅LTPS。
进一步,所述步骤S11中所述OLED器件阳极为Ag金属材料或者叠层材料ITO/AgITO制成。
与现有技术相比,本发明的有益效果:柔性面板受到拉伸时,由于第一弹性结构的存在,面板的拉伸形变集中于第一弹性区,第二弹性区的形变量可以减少到最小,但是仍不可避免存在微小形变,在该区设置第二弹性结构可以增加弹性层与刚性层接触面积以及改变应力方向,从而了减少弹性层与刚性层间拉伸形变差,提高拉伸时刚性层的粘附性,可以不使用粘合剂连接,同时微小弹性形变只会发生在刚性层,形变不会传递到刚性层上表面,保证刚性层上方像素区器件、驱动、信号线稳定性。
附图说明
此处所说明的附图用来提供对本申请的进一步理解,在附图中:
图1为本发明实施例一的流程示意图;
图2为本发明实施例制作的可拉伸阵列基板结构示意图。
具体实施方式
参见图1所示,实施例一种可拉伸阵列基板制作方法,其包括以下步骤:
S1、在玻璃基板上涂布柔性衬底材料制成柔性基板1;
S2、柔性基板1上阵列分布第二弹性区22和设在第二弹性区间隙的第一弹性区21,第一弹性区21和第二弹性区22通过喷墨打印、转印、纳米压印形变材料制备出类水波纹形状或凹坑形状的高低结构,所述第一弹性区21的纵深比第二弹性区22的纵深大;
S3、在第二弹性区上覆盖刚性层3,所述刚性层3采用有机材料制备,或使用无机材料利用镀膜-曝光-显影-蚀刻方式进行制备;
S4、第一弹性区21表面沉积第一金属层,通过光刻工艺形成驱动信号连接线和数据信号连接线4,驱动信号连接线和数据信号连接线4的两端与相邻的两个刚性层3上表面接触,或与相邻的两个刚性层3下表面接触,并在刚性层制出通孔露出驱动信号连接线和数据信号连接线4;
S5、刚性层3上依次沉积水氧阻隔层以及缓冲层5,平坦化第二弹性区22造成的表面起伏,并在水氧阻隔层以及缓冲层5制出通孔51露出驱动信号连接线和数据信号连接线4两端,缓冲层在柔性基板的投影面积小于或等于刚性层3覆盖区域;
S6、缓冲层上沉积第二金属层,通过光刻工艺形成单个像素区的内驱动信号线、信号桥接线以及TFT器件的栅极,内驱动信号线分别通过通孔与第一金属层的驱动信号连接线和数据信号连接线连接,内驱动信号线之间通过信号桥接线连接;
S7、第二金属层覆盖栅极绝缘层,在栅极绝缘层上对应TFT器件的栅极覆盖有源层,图案化有源层,栅极绝缘层制出通孔露出第二金属层;
S8、栅极绝缘层和有源层上沉积第三金属层,通过光刻工艺形成在有源层的两端TFT源极和TFT漏极以及栅极绝缘层上的数据信号线、阴极信号线,所述数据信号线通过通孔与第二金属层连接;
S9、第三金属层覆盖钝化层,钝化层上对应TFT漏极和阴极信号线蚀刻出通孔;
即S6-S9为在缓冲层上形成薄膜晶体管6;
S10、钝化层上涂布有机绝缘材料形成平坦层,并对应钝化层上的通孔蚀刻出相应的通孔;
S11、平坦层上沉积光刻工艺形成OLED器件的阳极和阴极信号线,所述阳极通过平坦层和钝化层的通孔与第三金属层的漏极连接,所述阴极信号线通过平坦层和钝化层的通孔与第三金属层的阴极信号线连接;
S12、第四金属层上覆盖有像素定义层,并显影出RGB图案开口露出OLED器件的阳极上表面,显影开口露出第四金属层阴极信号线;
S13、在RGB图案开口上蒸镀有机发光材料;
S14、在像素定义层上蒸镀透明导电材料制备OLED器件阴极,所述OLED器件阴极具有引脚,所述引脚穿过像素定义层的开口与第四金属层阴极信号线连接。
即S10-S14为在薄膜晶体管6上形成有机发光器件7;
进一步,所述步骤S1中的柔性衬底材料为PET、PEN、聚酰亚胺材料中的任意一种。
进一步,所述步骤S2中的形变材料为聚酰亚胺或聚二甲基硅氧烷。
进一步,所述步骤S3中的所述有机材料为聚酰亚胺、聚丙酸酯、聚醋酸酯中的任意一种;所述无机材料为氧化硅、氮化硅、氮氧化硅、氧化铝、氧化钛中的任意一种。
进一步,所述步骤S4中的所述第一金属层由一层或多层导电材料叠加制成,所述导电材料为铝、钼、钛、镍、铜、银中的任意一种或多种,或氧化钛、石墨烯、纳米银中的任意一种,或掺杂导电颗粒的有机材料导电膜。
进一步,所述步骤S5中的所述缓冲层材质为聚合物材料、有机光敏材料和无机材料中的任意一种;所述聚合物材料为PE、PEN、PI中的任意一种;所述无机材料为SiOx、SiNx、氧化铝、氧化钛的任意一种;所述水氧阻隔层为SiOx、SiNx、氧化铝、氧化钛的任意一种。
进一步,所述步骤S6和步骤S8中所述第二金属层和第二金属层为铝、钼、钛、镍、铜、银中的任意一种金属或多种合金,或为加层式结构,所述加层式结构为钛/铝/钛、钛/铝、铝/钼、钼/铝/钼中的任意一种。
进一步,所述步骤S7和步骤S9中所述栅极绝缘层和钝化层材料为无机氧化物或绝缘性质的化合物,所述无机氧化物为SiOx、SiNx、氧化铝、氧化钛、氧化铝中的任意一种;所述有源层为金属氧化物半导体材料或Si系材料,所述金属氧化物半导体材料为ZnO、IGZO、IGZTO、ITZO、Pr-IZO中的任意一种,所述 Si系材料为非晶硅a-Si或低温多晶硅LTPS。
进一步,所述步骤S11中所述OLED器件阳极为Ag金属材料或者叠层材料ITO/AgITO制成。
尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由所附权利要求及其等同物限定。
Claims (9)
1.一种可拉伸阵列基板制作方法,其特征在于:其包括以下步骤:
S1、在玻璃基板上涂布柔性衬底材料制成柔性基板;
S2、柔性基板上阵列分布第二弹性区和设在第二弹性区间隙的第一弹性区,第一弹性区和第二弹性区通过喷墨打印、转印、纳米压印形变材料制备出类水波纹形状或凹坑形状的高低结构,所述第一弹性区的纵深比第二弹性区的纵深大;
S3、在第二弹性区上覆盖刚性层,所述刚性层采用有机材料制备,或使用无机材料利用镀膜-曝光-显影-蚀刻方式进行制备;
S4、第一弹性区表面沉积第一金属层,通过光刻工艺形成驱动信号连接线和数据信号连接线,驱动信号连接线和数据信号连接线的两端与相邻的两个刚性层上表面接触,或与相邻的两个刚性层下表面接触,并在刚性层制出通孔露出驱动信号连接线和数据信号连接线;
S5、刚性层上依次沉积水氧阻隔层以及缓冲层,平坦化第二弹性区造成的表面起伏,并在水氧阻隔层以及缓冲层制出通孔露出驱动信号连接线和数据信号连接线两端,缓冲层在柔性基板的投影面积小于或等于刚性层覆盖区域;
S6、缓冲层上沉积第二金属层,通过光刻工艺形成单个像素区的内驱动信号线、信号桥接线以及TFT器件的栅极,内驱动信号线分别通过通孔与第一金属层的驱动信号连接线和数据信号连接线连接,内驱动信号线之间通过信号桥接线连接;
S7、第二金属层覆盖栅极绝缘层,在栅极绝缘层上对应TFT器件的栅极覆盖有源层,图案化有源层,栅极绝缘层制出通孔露出第二金属层;
S8、栅极绝缘层和有源层上沉积第三金属层,通过光刻工艺形成在有源层的两端TFT源极和TFT漏极以及栅极绝缘层上的数据信号线、阴极信号线,所述数据信号线通过通孔与第二金属层连接;
S9、第三金属层覆盖钝化层,钝化层上对应TFT漏极和阴极信号线蚀刻出通孔;
S10、钝化层上涂布有机绝缘材料形成平坦层,并对应钝化层上的通孔蚀刻出相应的通孔;
S11、平坦层上沉积光刻工艺形成OLED器件的阳极和阴极信号线,所述阳极通过平坦层和钝化层的通孔与第三金属层的漏极连接,所述阴极信号线通过平坦层和钝化层的通孔与第三金属层的阴极信号线连接;
S12、第四金属层上覆盖有像素定义层,并显影出RGB图案开口露出OLED器件的阳极上表面,显影开口露出第四金属层阴极信号线;
S13、在RGB图案开口上蒸镀有机发光材料;
S14、在像素定义层上蒸镀透明导电材料制备OLED器件阴极,所述OLED器件阴极具有引脚,所述引脚穿过像素定义层的开口与第四金属层阴极信号线连接。
2.根据权利要求1所述的一种可拉伸阵列基板制作方法,其特征在于:所述步骤S1中的柔性衬底材料为PET、PEN、聚酰亚胺材料中的任意一种。
3.根据权利要求1所述的一种可拉伸阵列基板制作方法,其特征在于:所述步骤S2中的形变材料为聚酰亚胺或聚二甲基硅氧烷。
4.根据权利要求1所述的一种可拉伸阵列基板制作方法,其特征在于:所述步骤S3中的所述有机材料为聚酰亚胺、聚丙酸酯、聚醋酸酯中的任意一种;所述无机材料为氧化硅、氮化硅、氮氧化硅、氧化铝、氧化钛中的任意一种。
5.根据权利要求1所述的一种可拉伸阵列基板制作方法,其特征在于:所述步骤S4中的所述第一金属层由一层或多层导电材料叠加制成,所述导电材料为铝、钼、钛、镍、铜、银中的任意一种或多种,或氧化钛、石墨烯、纳米银中的任意一种,或掺杂导电颗粒的有机材料导电膜。
6.根据权利要求1所述的一种可拉伸阵列基板制作方法,其特征在于:所述步骤S5中的所述缓冲层材质为聚合物材料、有机光敏材料和无机材料中的任意一种;所述聚合物材料为PE、PEN、PI中的任意一种;所述无机材料为SiOx、SiNx、氧化铝、氧化钛的任意一种;所述水氧阻隔层为SiOx、SiNx、氧化铝、氧化钛的任意一种。
7.根据权利要求1所述的一种可拉伸阵列基板制作方法,其特征在于:所述步骤S6和步骤S8中所述第二金属层和第二金属层为铝、钼、钛、镍、铜、银中的任意一种金属或多种合金,或为加层式结构,所述加层式结构为钛/铝/钛、钛/铝、铝/钼、钼/铝/钼中的任意一种。
8. 根据权利要求1所述的一种可拉伸阵列基板制作方法,其特征在于:所述步骤S7和步骤S9中所述栅极绝缘层和钝化层材料为无机氧化物或绝缘性质的化合物,所述无机氧化物为SiOx、SiNx、氧化铝、氧化钛、氧化铝中的任意一种;所述有源层为金属氧化物半导体材料或Si系材料,所述金属氧化物半导体材料为ZnO、IGZO、IGZTO、ITZO、Pr-IZO中的任意一种,所述 Si系材料为非晶硅a-Si或低温多晶硅LTPS。
9.根据权利要求1所述的一种可拉伸阵列基板制作方法,其特征在于:所述步骤S11中所述OLED器件阳极为Ag金属材料或者叠层材料ITO/AgITO制成。
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