CN114990666B - Hole sealing method for metal surface chemical treatment - Google Patents
Hole sealing method for metal surface chemical treatment Download PDFInfo
- Publication number
- CN114990666B CN114990666B CN202210683618.7A CN202210683618A CN114990666B CN 114990666 B CN114990666 B CN 114990666B CN 202210683618 A CN202210683618 A CN 202210683618A CN 114990666 B CN114990666 B CN 114990666B
- Authority
- CN
- China
- Prior art keywords
- hole sealing
- water
- product
- sealing liquid
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
- C25D11/24—Chemical after-treatment
- C25D11/246—Chemical after-treatment for sealing layers
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Detergent Compositions (AREA)
Abstract
The invention discloses a hole sealing liquid and a hole sealing method for metal surface chemical treatment, which belong to the preparation technology of parts for chemical vapor deposition and dry etching equipment, and comprise the following raw material components: water, ammonium acetate and sodium dihydrogen phosphate, the beneficial effects of the invention are that: the hole sealing liquid hole sealing product prepared by water, ammonium acetate and sodium dihydrogen phosphate according to the proportion has good effect and high voltage resistance; the hole sealing liquid consists of chemical medicines, and the water for high-temperature hole sealing is regulated and controlled by utilizing ion balance and chemical sedimentation; the hole sealing liquid reduces the water quality requirement, is beneficial to the production of large-area products, and can achieve ideal hole sealing effect.
Description
Technical Field
The invention belongs to the technical field of part preparation for chemical vapor deposition and dry etching equipment, and particularly relates to a hole sealing method for metal surface chemical treatment.
Background
With the rapid development of the photoelectric industry and the semiconductor industry, high-end products of aluminum alloy are widely used in equipment in the industries, such as dry etching equipment and chemical vapor deposition equipment, 5052 series and 6061 series aluminum alloys are widely used, and the surfaces of the 6061 series and 5052 series aluminum alloys are subjected to electrochemical treatment, so that the performances of voltage resistance, corrosion resistance, thermal shock resistance and the like of the aluminum alloys can be remarkably improved.
However, due to the high requirements of the photoelectric industry and the semiconductor industry, the equipment component production process cannot contain metal ions such as nickel, copper, iron and the like, and the high requirements of 18MΩ & cm and above are set for water quality, so that the addition of a plurality of ash inhibitors, surfactants, accelerators and the like is avoided, and the high quality requirements of the common hole sealing process cannot be met. Therefore, the additive is added into the hole sealing water to regulate and control the hole sealing liquid, reduce the interference caused by impurities in the water and improve the voltage and corrosion resistance of the product.
Disclosure of Invention
In view of the above, the present invention aims to provide a hole sealing method for metal surface chemical treatment.
In order to achieve the above purpose, the present invention provides the following technical solutions: the hole sealing liquid for the chemical treatment of the metal surface comprises the following raw material components: the resistivity is 3-7MΩ cm water and the additive comprises ammonium acetate and sodium dihydrogen phosphate, wherein the mass percentage of the ammonium acetate is 0.008-0.012%, and the mass percentage of the sodium dihydrogen phosphate is 0.0008-0.0012%.
Further, the ratio of ammonium acetate to sodium dihydrogen phosphate is 10:1.
further, 800-1200kg of water, 0.08-0.12kg of ammonium acetate and 0.008-0.012kg of sodium dihydrogen phosphate.
The hole sealing method of the hole sealing liquid for the chemical treatment of the metal surface comprises the following steps:
s1, adding 0.08-0.12% of ammonium acetate and 0.008-0.012% of sodium dihydrogen phosphate into the water obtained in the step S1 to prepare a hole sealing liquid, and uniformly stirring and mixing the hole sealing liquid and the water to measure the pH value of the hole sealing liquid;
s3, adding glacial acetic acid and ammonia water according to the pH value to enable the pH value of the hole sealing liquid to be between 5.5 and 6.0;
s4, starting heating equipment, and heating the hole sealing liquid to 90-100 ℃;
s5, carrying out hole sealing pretreatment on a product to be subjected to hole sealing, transferring the treated product into hole sealing equipment, enabling hole sealing liquid to submerge the product, and starting air stirring;
s6, calculating hole sealing time according to the film thickness, cleaning, drying and packaging the product after hole sealing.
Further, the hole sealing time in the step S6 is calculated in such a way that the hole sealing time of the film thickness of 1 μm is 80-90 seconds.
Further, in the step S6, the product is dried and cleaned before being packaged, and the product is subjected to two steps of water cleaning and high-pressure cleaning.
Further, in the step S5, the product is cleaned and then placed in the hole sealing liquid, and the surface is required to be kept moist.
In the step S3, glacial acetic acid is added when the pH value is higher, and ammonia water is added when the pH value is lower.
Further, the hole sealing device in the step S1 is a hole sealing groove, and the heating device in the step S4 is a steam generator.
The invention has the beneficial effects that:
1. the hole sealing liquid prepared from water, ammonium acetate and sodium dihydrogen phosphate in proportion has unique components, good hole sealing product effect and obviously improved voltage resistance after hole sealing, and is suitable for large-area aluminum alloy products with holes or reducing small holes.
2. The hole sealing liquid consists of chemical medicines, and the water for high-temperature hole sealing is regulated and controlled by utilizing ion balance and chemical sedimentation.
3. The hole sealing liquid reduces the water quality requirement, is beneficial to the production of large-area products, and can achieve ideal hole sealing effect.
4. The hole sealing liquid and the hole sealing method solve the problem of high requirement on water quality in the production of aluminum alloy parts of dry etching equipment and chemical vapor deposition equipment by boiling water hole sealing, and can achieve better effect without adding ash inhibitor and the like.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objects and other advantages of the invention may be realized and obtained by means of the instrumentalities and combinations particularly pointed out in the specification.
Drawings
In order to make the objects, technical solutions and advantageous effects of the present invention more clear, the present invention provides the following drawings for description:
FIG. 1 is a photograph of a surface scanning electron microscope after hole sealing using a hole sealing liquid of the present invention in example 1;
FIG. 2 is a photograph of a cross-sectional scanning electron microscope after hole sealing using the hole sealing liquid of the present invention in example 1;
FIG. 3 is a photograph of a surface scanning electron microscope of comparative example 1 without hole sealing;
FIG. 4 is a photograph of a cross-sectional scanning electron microscope of comparative example 1 without hole sealing;
FIG. 5 is a photograph of a surface scanning electron microscope after hole sealing using a conventional hole sealing liquid in comparative example 2;
fig. 6 is a photograph of a cross-sectional scanning electron microscope after sealing with a conventional sealing liquid of comparative example 2.
Detailed Description
The following will clearly and completely describe the technical solutions in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, other embodiments that may be obtained by those of ordinary skill in the art without making any inventive effort are within the scope of the present invention.
Example 1: the hole sealing liquid for the metal surface chemical treatment comprises the following raw material components in parts by mass: 800kg of water, 0.08kg of ammonium acetate, 0.008kg of sodium dihydrogen phosphate, and the ratio of ammonium acetate to sodium dihydrogen phosphate is 10:1, a step of;
a hole sealing method using a hole sealing liquid for metal surface chemical treatment comprises the following steps:
s1, adding 800kg of water into a hole sealing groove, and measuring the pH value and the resistivity of the water, wherein the water can be used when the resistivity is 5MΩ;
s2, adding 0.08kg of ammonium acetate and 0.008kg of sodium dihydrogen phosphate into the water in the step S1 to prepare a hole sealing liquid, uniformly stirring and mixing, measuring the pH value of the hole sealing liquid, wherein the sodium dihydrogen phosphate is used as a water softener, and acts with cations such as calcium, magnesium and the like in the water to generate precipitate for separation, and the ammonium acetate and the sodium dihydrogen phosphate are added into the water to help to keep the constant pH value of the hole sealing liquid, and ionized cations can balance anions in the water to keep the solution stable;
s3, adding glacial acetic acid and ammonia water according to the pH value, when the pH value of the hole sealing liquid is higher, adding the glacial acetic acid to reduce the pH value of the hole sealing liquid, and when the pH value of the hole sealing liquid is lower, adding the ammonia water to increase the pH value of the hole sealing liquid to enable the pH value of the hole sealing liquid to be between 5.5 and 6.0;
s4, starting a steam generator, and heating the hole sealing liquid to 95 ℃;
s5, carrying out electrochemical treatment on a product to be sealed, transferring the treated product into sealing equipment, submerging the product by using sealing liquid, keeping the product moist during transfer, and starting air stirring;
s6, calculating hole sealing time according to the film thickness, wherein the hole sealing time of a film thickness product with the film thickness of 1 mu m is 85 seconds, and drying and packaging the product subjected to hole sealing after washing with water and high-pressure washing.
Example 2: the hole sealing liquid for the metal surface chemical treatment comprises the following raw material components in parts by mass: 1000kg of water, 0.1kg of ammonium acetate, 0.01kg of sodium dihydrogen phosphate, the ratio of ammonium acetate to sodium dihydrogen phosphate being 10:1,
a hole sealing method of hole sealing liquid for metal surface chemical treatment comprises the following steps:
s1, adding 1000kg of water into a hole sealing groove, and measuring the pH value and the resistivity of the water, wherein the water can be used when the resistivity is 5MΩ;
s2, adding 0.1kg of ammonium acetate and 0.01kg of sodium dihydrogen phosphate into the water in the step S1 to prepare a hole sealing liquid, uniformly stirring and mixing, measuring the pH value of the hole sealing liquid, wherein the sodium dihydrogen phosphate is used as a water softener, and acts with cations such as calcium, magnesium and the like in the water to generate precipitate for separation, and the ammonium acetate and the sodium dihydrogen phosphate are added into the water to help to keep the constant pH value of the hole sealing liquid, and ionized cations can balance anions in the water to keep the solution stable;
s3, adding glacial acetic acid and ammonia water according to the pH value, when the pH value of the hole sealing liquid is higher, adding the glacial acetic acid to reduce the pH value of the hole sealing liquid, and when the pH value of the hole sealing liquid is lower, adding the ammonia water to increase the pH value of the hole sealing liquid to enable the pH value of the hole sealing liquid to be between 5.5 and 6.0;
s4, starting a steam generator, and heating the hole sealing liquid to 95 ℃;
s5, carrying out electrochemical treatment on a product to be sealed, transferring the treated product into sealing equipment, submerging the product by using sealing liquid, keeping the product moist during transfer, and starting air stirring;
s6, calculating hole sealing time according to the film thickness, wherein the hole sealing time of a film thickness product with the film thickness of 1 mu m is 85 seconds, and drying and packaging the product subjected to hole sealing after washing with water and high-pressure washing.
Example 3: the hole sealing liquid for the metal surface chemical treatment comprises the following raw material components in parts by mass: 1200kg of water, 0.12kg of ammonium acetate, 0.012kg of sodium dihydrogen phosphate, the ratio of ammonium acetate to sodium dihydrogen phosphate being 10:1.
a hole sealing method using a hole sealing liquid for metal surface chemical treatment comprises the following steps:
s1, adding 1200kg of water into a hole sealing groove, and measuring the pH value and the resistivity of the water, wherein the water can be used when the resistivity is 5MΩ;
s2, adding 0.12kg of ammonium acetate and 0.012kg of sodium dihydrogen phosphate into the water in the step S1 to prepare a hole sealing liquid, uniformly stirring and mixing, measuring the pH value of the hole sealing liquid, wherein the sodium dihydrogen phosphate is used as a water softener, and acts with cations such as calcium, magnesium and the like in the water to generate precipitate for separation, and the ammonium acetate and the sodium dihydrogen phosphate are added into the water to help to keep the constant pH value of the hole sealing liquid, and ionized cations can balance anions in the water to keep the solution stable;
s3, adding glacial acetic acid and ammonia water according to the pH value, when the pH value of the hole sealing liquid is higher, adding the glacial acetic acid to reduce the pH value of the hole sealing liquid, and when the pH value of the hole sealing liquid is lower, adding the ammonia water to increase the pH value of the hole sealing liquid to enable the pH value of the hole sealing liquid to be between 5.5 and 6.0;
s4, starting a steam generator, and heating the hole sealing liquid to 95 ℃;
s5, carrying out electrochemical treatment on a product to be sealed, transferring the treated product into sealing equipment, submerging the product by using sealing liquid, keeping the product moist during transfer, and starting air stirring;
s6, calculating hole sealing time according to the film thickness, wherein the hole sealing time of a film thickness product with the film thickness of 1 mu m is 85 seconds, and drying and packaging the product subjected to hole sealing after washing with water and high-pressure washing.
Comparative example 1:
s1, carrying out electrochemical pretreatment on a product, and then not carrying out hole sealing;
s2, observing the microscopic morphology of the treated product.
Comparative example 2:
s1, carrying out electrochemical pretreatment on a product;
s2, placing the product in pure water for hole sealing;
s3, drying the hole after hole sealing is finished, and observing the microscopic morphology of the dried product.
The performance test of different hole sealing methods on products is shown in the following table:
test meter
From the above table: the product of comparative example 1, which was not subjected to hole sealing, was inferior in both AC and DC voltage breakdown resistance to the product subjected to hole sealing; the product subjected to hole sealing by adopting the hole sealing liquid has higher AC and DC voltage breakdown resistance than the traditional hole sealing in comparative example 2, wherein the AC breakdown voltage resistance is 0.43KV higher than that of the traditional hole sealing and 0.58KV higher than that of the product subjected to hole sealing without hole sealing. The DC breakdown voltage is 1.18KV higher than that of the traditional hole sealing and 1.28KV higher than that of the hole sealing.
Fig. 1 is a surface scanning electron micrograph of example 1, and fig. 2 is a cross-sectional scanning electron micrograph of example 1. Fig. 3 is a surface electron micrograph of comparative example 1 in which hole sealing was not performed, fig. 4 is a cross-sectional electron micrograph of comparative example 1 in which hole sealing was not performed, fig. 5 is a conventional hole sealing surface electron micrograph of comparative example 2, and fig. 6 is a conventional hole sealing cross-sectional electron micrograph of comparative example 2.
From a comparison of fig. 1, 3 and 5, it can be seen that there are a large number of nano-scale micropores on the surface of the non-plugged sample, these micropores are typical features of the sample after electrochemical treatment, and the existence of the micropores significantly affects the AC breakdown voltage and DC breakdown voltage resistance of the sample, as shown in the test table data. In the hole sealing sample, a large number of lamellar structures are piled on the surface, and the lamellar structures on the surface of the sample adopting the hole sealing liquid are piled densely and uniformly, so that the flatness is good. The surface laminated structure of the sample adopting the traditional hole sealing liquid is loose and uneven in accumulation, and poor in flatness, so that the AC breakdown voltage resistance and DC breakdown voltage resistance of the sample are related to the accumulation uniformity of the laminated structure, and the more dense and uniform the accumulation, the better the AC breakdown voltage resistance and DC breakdown voltage resistance are.
By comparing fig. 2, fig. 4 and fig. 6, it can be seen that the section photographs of the sample without hole sealing are hollow columnar structures, the hole sealing samples are solid structures, and the columnar structures of the sample sealed by the hole sealing liquid of the invention are vertical to the surface of the sample and are uniformly and orderly distributed. The columnar structure of the sample sealed by the traditional hole sealing liquid is inclined to the surface of the sample, the distribution is disordered and uneven, the distribution difference of the hole sealing structures is embodied above the AC breakdown voltage resistance and DC breakdown voltage resistance, the vertical distribution is uniform, the AC breakdown voltage resistance and DC breakdown voltage resistance of the hole sealing structure are good, and the AC breakdown voltage resistance and DC breakdown voltage resistance of the hole sealing structure with uneven inclined distribution are poor.
Finally, it is noted that the above-mentioned preferred embodiments are only intended to illustrate rather than limit the invention, and that, although the invention has been described in detail by means of the above-mentioned preferred embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the scope of the invention as defined by the appended claims.
Claims (6)
1. A hole sealing method for metal surface chemical treatment is characterized in that: the method comprises the following steps:
s1, adding 800-1200kg of water with resistivity of 3-7MΩ & cm into hole sealing equipment, and measuring the pH value and resistivity of the water;
s2, adding 0.08-0.12kg of ammonium acetate and 0.008-0.012kg of sodium dihydrogen phosphate into the water obtained in the step S1 to prepare a hole sealing liquid, and uniformly stirring and mixing the hole sealing liquid and the water to measure the pH value of the hole sealing liquid;
s3, adding glacial acetic acid and ammonia water according to the pH value to enable the pH value of the hole sealing liquid to be between 5.5 and 6.0;
s4, starting heating equipment, and heating the hole sealing liquid to 90-100 ℃;
s5, carrying out hole sealing pretreatment on a product to be subjected to hole sealing, transferring the treated product into hole sealing equipment, enabling hole sealing liquid to submerge the product, and starting air stirring;
s6, calculating hole sealing time according to the film thickness, cleaning, drying and packaging the product after hole sealing.
2. The hole sealing method for the chemical treatment of a metal surface according to claim 1, wherein: and S6, calculating the hole sealing time in the step of 80-90 seconds, wherein the hole sealing time is calculated in a mode of 1 mu m of film thickness.
3. The hole sealing method for the chemical treatment of a metal surface according to claim 1, wherein: and S6, the product is dried and cleaned before being packaged, and the product is subjected to two steps of water cleaning and high-pressure cleaning.
4. The hole sealing method for the chemical treatment of a metal surface according to claim 1, wherein: and S5, keeping the surface moist when the product is placed in the hole sealing liquid after being cleaned in the step of cleaning.
5. The hole sealing method for the chemical treatment of a metal surface according to claim 1, wherein: and S3, adding glacial acetic acid when the pH value is higher and adding ammonia water when the pH value is lower in the step of S3.
6. The hole sealing method for the chemical treatment of a metal surface according to claim 1, wherein: the hole sealing device in the step S1 is a hole sealing groove, and the heating device in the step S4 is a steam generator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210683618.7A CN114990666B (en) | 2022-06-17 | 2022-06-17 | Hole sealing method for metal surface chemical treatment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210683618.7A CN114990666B (en) | 2022-06-17 | 2022-06-17 | Hole sealing method for metal surface chemical treatment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114990666A CN114990666A (en) | 2022-09-02 |
| CN114990666B true CN114990666B (en) | 2023-09-05 |
Family
ID=83035801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210683618.7A Active CN114990666B (en) | 2022-06-17 | 2022-06-17 | Hole sealing method for metal surface chemical treatment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114990666B (en) |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09300838A (en) * | 1996-03-12 | 1997-11-25 | Konica Corp | Substrate for photosensitive lithographic printing plate and its manufacture, and photosensitive lithographic printing plate and its processing method |
| JP2005265501A (en) * | 2004-03-17 | 2005-09-29 | Fuji Photo Film Co Ltd | Method of measuring concentrations of fluorine compounds and phosphoric acid compounds in aqueous solution |
| JP2015004084A (en) * | 2013-06-19 | 2015-01-08 | 奥野製薬工業株式会社 | Sealing liquid for anodic oxidation film of aluminum alloy |
| CN104451822A (en) * | 2014-11-19 | 2015-03-25 | 东莞市日野化工科技有限公司 | Hole-sealing agent and preparation method thereof |
| CN105088311A (en) * | 2015-08-06 | 2015-11-25 | 深圳前海艾丽优科技有限公司 | Aluminum alloy nickel-free environment-friendly hole sealing agent |
| JP2016145383A (en) * | 2015-02-06 | 2016-08-12 | 栗田工業株式会社 | Surface treatment method for aluminum or aluminum alloy, and surface treatment device |
| CN107815717A (en) * | 2017-09-13 | 2018-03-20 | 上海申和热磁电子有限公司 | A kind of ashless pure water method for sealing of aluminium alloy anode oxide |
| CN109402702A (en) * | 2018-10-17 | 2019-03-01 | 佛山市南海双成金属表面技术有限公司 | Deashing agent and preparation method thereof after a kind of closing of aluminium alloy anode oxide technique |
| CN109652836A (en) * | 2019-02-26 | 2019-04-19 | 国际铝业(厦门)有限公司 | A kind of process of surface treatment of 6063 aluminium alloy extrusions |
| CN110373626A (en) * | 2019-08-21 | 2019-10-25 | 重庆臻宝实业有限公司 | The aluminum oxide coating layer method for sealing of anti-plasma corrosion |
| CN110512258A (en) * | 2019-10-11 | 2019-11-29 | 东莞市慧泽凌化工科技有限公司 | A kind of no nickel hole-sealing technology |
| CN114015967A (en) * | 2021-11-09 | 2022-02-08 | 重庆臻宝实业有限公司 | Preparation method of low-porosity yttrium oxide coating |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8309237B2 (en) * | 2007-08-28 | 2012-11-13 | Alcoa Inc. | Corrosion resistant aluminum alloy substrates and methods of producing the same |
-
2022
- 2022-06-17 CN CN202210683618.7A patent/CN114990666B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09300838A (en) * | 1996-03-12 | 1997-11-25 | Konica Corp | Substrate for photosensitive lithographic printing plate and its manufacture, and photosensitive lithographic printing plate and its processing method |
| JP2005265501A (en) * | 2004-03-17 | 2005-09-29 | Fuji Photo Film Co Ltd | Method of measuring concentrations of fluorine compounds and phosphoric acid compounds in aqueous solution |
| JP2015004084A (en) * | 2013-06-19 | 2015-01-08 | 奥野製薬工業株式会社 | Sealing liquid for anodic oxidation film of aluminum alloy |
| CN104451822A (en) * | 2014-11-19 | 2015-03-25 | 东莞市日野化工科技有限公司 | Hole-sealing agent and preparation method thereof |
| JP2016145383A (en) * | 2015-02-06 | 2016-08-12 | 栗田工業株式会社 | Surface treatment method for aluminum or aluminum alloy, and surface treatment device |
| CN105088311A (en) * | 2015-08-06 | 2015-11-25 | 深圳前海艾丽优科技有限公司 | Aluminum alloy nickel-free environment-friendly hole sealing agent |
| CN107815717A (en) * | 2017-09-13 | 2018-03-20 | 上海申和热磁电子有限公司 | A kind of ashless pure water method for sealing of aluminium alloy anode oxide |
| CN109402702A (en) * | 2018-10-17 | 2019-03-01 | 佛山市南海双成金属表面技术有限公司 | Deashing agent and preparation method thereof after a kind of closing of aluminium alloy anode oxide technique |
| CN109652836A (en) * | 2019-02-26 | 2019-04-19 | 国际铝业(厦门)有限公司 | A kind of process of surface treatment of 6063 aluminium alloy extrusions |
| CN110373626A (en) * | 2019-08-21 | 2019-10-25 | 重庆臻宝实业有限公司 | The aluminum oxide coating layer method for sealing of anti-plasma corrosion |
| CN110512258A (en) * | 2019-10-11 | 2019-11-29 | 东莞市慧泽凌化工科技有限公司 | A kind of no nickel hole-sealing technology |
| CN114015967A (en) * | 2021-11-09 | 2022-02-08 | 重庆臻宝实业有限公司 | Preparation method of low-porosity yttrium oxide coating |
Non-Patent Citations (1)
| Title |
|---|
| 磷酸盐封孔处理对铝合金阳极氧化膜 耐蚀性能的影响;刘 莉等;《腐蚀科学与防护技术》;第28卷(第2期);129-134 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114990666A (en) | 2022-09-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113458143B (en) | Method for preparing aluminum electrolytic capacitor anode foil by using cold rolling mill | |
| CN102808210A (en) | Micro-arc oxidation surface treatment method and product prepared by same | |
| CN104599829A (en) | Method for improving magnetic property of sintered NdFeB magnet | |
| CN103249870A (en) | Etching agent for aluminium and aluminium alloys | |
| CN107236945A (en) | A kind of preparation method of stainless steel surfaces phosphating coat | |
| CN101383228B (en) | Formation method of electrode foil for low voltage low leakage aluminum electrolysis capacitor | |
| CN103382564A (en) | Super-hydrophobic cobalt plating of metal surface and preparation method for super-hydrophobic cobalt plating | |
| CN103296283A (en) | Titanium plate with surface being wrapped by Ti4O7 (titanium oxide) membrane and substrate of bipolar lead-acid battery | |
| CN114990666B (en) | Hole sealing method for metal surface chemical treatment | |
| CN102230177A (en) | Magnesium alloy stripping solution and its stripping method | |
| CN115188597A (en) | Preparation method of sintered anode material based on multi-particle size matching | |
| CN104828818B (en) | The efficient intercalation stripping means and low order graphite intercalation compound and micron thin-walled porous expanded graphite of a kind of micron graphite thin slice | |
| CN107946459A (en) | A kind of whole soln preparation method of oxide memristor | |
| DE10297114B4 (en) | Method for anodizing magnesium and electrolytic solution | |
| Zhao et al. | Electrochemical behavior and compositions of passive films of amorphous Ni-P coating in acidic environment | |
| CN114540819B (en) | Corrosion inhibitor based on pyracantha fortuneana fruits, preparation method and application | |
| Fang et al. | Determination of the composition of viscous liquid film on electropolishing copper surface by XPS and AES | |
| CN113463078B (en) | Preparation method and application of antioxidant liquid containing polyhydroxy organic matters | |
| CN106119795A (en) | Utilize the method that vacuum magnetron sputtering coating film technology prepares lithium battery C Si negative pole coating | |
| CN106521466B (en) | The preparation method of titanium or titanium alloy surface chemical composition coating is induced using electric coupling | |
| CN108677182A (en) | A kind of mechanical deposit cadmium and cadmium alloy coating activator | |
| Mazman et al. | Optimization of LiFePO_4 synthesis by hydrothermal method | |
| CN109055933B (en) | Powder liquid phase plasma surface modification method and device thereof | |
| CN1484260A (en) | Method for mfg negative electrode foil of aluminium electrolytic capacitor | |
| CN103451581B (en) | A kind of aging thermal treating process of 3003 aluminium alloy electronics paper tinsels |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 401326 no.66-72, sendi Avenue, Xipeng Town, Jiulongpo District, Chongqing Applicant after: Chongqing Zhenbao Technology Co.,Ltd. Address before: 401326 no.66-72, sendi Avenue, Xipeng Town, Jiulongpo District, Chongqing Applicant before: CHONGQING ZHENBAO INDUSTRIAL Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |