CN114990666A - Hole sealing liquid and hole sealing method for metal surface chemical treatment - Google Patents
Hole sealing liquid and hole sealing method for metal surface chemical treatment Download PDFInfo
- Publication number
- CN114990666A CN114990666A CN202210683618.7A CN202210683618A CN114990666A CN 114990666 A CN114990666 A CN 114990666A CN 202210683618 A CN202210683618 A CN 202210683618A CN 114990666 A CN114990666 A CN 114990666A
- Authority
- CN
- China
- Prior art keywords
- hole sealing
- water
- sealing liquid
- metal surface
- product
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/04—Anodisation of aluminium or alloys based thereon
- C25D11/18—After-treatment, e.g. pore-sealing
- C25D11/24—Chemical after-treatment
- C25D11/246—Chemical after-treatment for sealing layers
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Detergent Compositions (AREA)
Abstract
The invention discloses a hole sealing liquid and a hole sealing method for metal surface chemical treatment, belonging to the preparation technology of parts for chemical vapor deposition and dry etching equipment, and comprising the following raw material components: water, ammonium acetate and sodium dihydrogen phosphate, the invention has the following beneficial effects: the hole sealing liquid prepared by water, ammonium acetate and sodium dihydrogen phosphate according to a certain proportion has good hole sealing effect and high voltage resistance; the hole sealing liquid consists of chemicals, and water for high-temperature hole sealing is regulated and controlled by utilizing the ion balance and chemical sedimentation; the hole sealing liquid reduces the water quality requirement, is beneficial to the production of large-area products, and can achieve the ideal hole sealing effect.
Description
Technical Field
The invention belongs to the technical field of preparation of parts for chemical vapor deposition and dry etching equipment, and particularly relates to a hole sealing liquid and a hole sealing method for chemical treatment of a metal surface.
Background
With the rapid development of the photoelectric industry and the semiconductor industry, high-end aluminum alloy products are largely used in equipment in the industries, for example, 5052 series aluminum alloy and 6061 series aluminum alloy are largely used in dry etching equipment and chemical vapor deposition equipment, and the performances of voltage resistance, corrosion resistance, thermal shock resistance and the like of the aluminum alloy can be remarkably improved after the surfaces of the 6061 series aluminum alloy and the 5052 series aluminum alloy are subjected to electrochemical treatment.
However, due to the high requirements of the photoelectric industry and the semiconductor industry, metal ions such as nickel, copper, iron and the like cannot be contained in the production process of equipment parts, and the high requirements of reaching 18M omega cm and above are provided for water quality, so that the addition of a plurality of dust inhibitors, surfactants, accelerators and the like is avoided, and the common hole sealing process cannot meet the high-quality requirements. Therefore, the additive is required to be added into the hole sealing water to regulate and control the hole sealing liquid, so that the interference caused by impurities in the water is reduced, and the voltage resistance and corrosion resistance of the product are improved.
Disclosure of Invention
In view of the above, the present invention is directed to a high temperature hole sealing additive for chemical treatment of metal surface and a preparation method thereof.
In order to achieve the purpose, the invention provides the following technical scheme: the hole sealing liquid for the chemical treatment of the metal surface comprises the following raw material components: the resistivity is 3-7M omega.cm, and the water and the additive comprise ammonium acetate and sodium dihydrogen phosphate, wherein the mass percent of the ammonium acetate is 0.008-0.012%, and the mass percent of the sodium dihydrogen phosphate is 0.0008-0.0012%.
Further, the ratio of ammonium acetate to sodium dihydrogen phosphate is 10: 1.
further, 800-1200kg of water, 0.08-0.12kg of ammonium acetate, and 0.008-0.012kg of sodium dihydrogen phosphate.
A hole sealing method of hole sealing liquid for metal surface chemical treatment comprises the following steps:
s1, adding 0.08-0.12% of ammonium acetate and 0.008-0.012% of sodium dihydrogen phosphate into the water obtained in the step S1 to prepare a hole sealing liquid, and measuring the pH value of the hole sealing liquid after uniformly stirring;
s3, adding glacial acetic acid and ammonia water according to the pH value to ensure that the pH value of the hole sealing liquid is between 5.5 and 6.0;
s4, starting heating equipment, and heating the hole sealing liquid to 90-100 ℃;
s5, carrying out hole sealing pretreatment on a product to be sealed, transferring the treated product to hole sealing equipment, enabling the product to be submerged by hole sealing liquid, and starting air to stir;
and S6, calculating the hole sealing time according to the film thickness, cleaning the product after hole sealing, drying the product after hole sealing, and packaging the product.
Further, the sealing time in the step S6 is calculated in such a manner that the sealing time for a film thickness of 1 μm is 80 to 90 seconds.
Further, in the step S6, the product needs to be dried and cleaned before being packaged, which requires two steps of water washing and high pressure cleaning.
Further, after the product is cleaned in the step S5, the surface needs to be kept wet when the product is placed in the hole sealing liquid.
Further, in step S3, glacial acetic acid is added when the pH value is higher, and ammonia water is added when the pH value is lower.
Further, the hole sealing equipment in the step S1 is a hole sealing groove, and the heating equipment in the step S4 is a steam generator.
The invention has the beneficial effects that:
1. the hole sealing liquid prepared by water, ammonium acetate and sodium dihydrogen phosphate according to a certain proportion has unique components, good hole sealing effect, and obviously improved voltage resistance after hole sealing, and is suitable for large-area aluminum alloy products with holes or holes with variable diameters.
2. The hole sealing liquid consists of chemicals, and water for high-temperature hole sealing is regulated and controlled by utilizing the ion balance and chemical sedimentation effects.
3. The hole sealing liquid reduces the water quality requirement, is beneficial to the production of large-area products, and can achieve the ideal hole sealing effect.
4. The hole sealing liquid and the hole sealing method provided by the invention make up for the problem that the boiling water hole sealing has high requirement on water quality in the production of aluminum alloy parts of dry etching equipment and chemical vapor deposition equipment, and can achieve a better effect without adding an ash inhibitor and the like.
Additional advantages, objects, and features of the invention will be set forth in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention may be realized and attained by the means of the instrumentalities and combinations particularly pointed out hereinafter.
Drawings
In order to make the object, technical scheme and beneficial effect of the invention more clear, the invention provides the following drawings for explanation:
FIG. 1 is a picture of a surface scanning electron microscope after sealing holes with the sealing liquid of the present invention in example 1;
FIG. 2 is a photograph of a cross-sectional scanning electron microscope after sealing holes with the sealing liquid of the present invention in example 1;
FIG. 3 is a photograph of a scanning electron microscope of a surface on which sealing was not performed in comparative example 1;
FIG. 4 is a scanning electron micrograph of a cross section of comparative example 1 in which pore sealing was not performed;
FIG. 5 is a picture of a surface scanning electron microscope after sealing holes with a conventional sealing liquid in comparative example 2;
fig. 6 is a picture of a cross-sectional scanning electron microscope after sealing with a conventional sealing liquid in comparative example 2.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. Other embodiments, which can be derived by one of ordinary skill in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1: a hole sealing liquid for metal surface chemical treatment comprises the following raw material components in parts by mass: 800kg of water, 0.08kg of ammonium acetate and 0.008kg of sodium dihydrogen phosphate, wherein the ratio of ammonium acetate to sodium dihydrogen phosphate is 10: 1;
a method for sealing a hole by using a sealing liquid for chemical treatment of a metal surface:
s1, adding 800kg of water into the hole sealing groove, and measuring the pH value and the resistivity of the water, wherein the water can be used when the resistivity is 5M omega;
s2, adding 0.08kg of ammonium acetate and 0.008kg of sodium dihydrogen phosphate into the water obtained in the step S1 to prepare a hole sealing liquid, uniformly stirring and measuring the pH value of the hole sealing liquid, wherein the sodium dihydrogen phosphate is used as a water softener and reacts with cations such as calcium, magnesium and the like in water to generate precipitates to be separated out, the ammonium acetate and the sodium dihydrogen phosphate are added into the water to help to keep the pH value of the hole sealing liquid constant, and the ionized cations can balance anions in the water and maintain the solution stable;
s3, adding glacial acetic acid and ammonia water according to the pH value, adding glacial acetic acid to reduce the pH value of the hole sealing liquid when the pH value of the hole sealing liquid is higher, and adding ammonia water to increase the pH value of the hole sealing liquid when the pH value of the hole sealing liquid is lower so that the pH value of the hole sealing liquid is between 5.5 and 6.0;
s4, starting a steam generator, and heating the hole sealing liquid to 95 ℃;
s5, performing electrochemical treatment on a product to be hole sealed, transferring the treated product to hole sealing equipment, enabling the product to be submerged by hole sealing liquid, keeping the product moist during transfer, and starting air to stir;
and S6, calculating the hole sealing time according to the film thickness, wherein the hole sealing time of the product with the film thickness of 1 mu m is 85 seconds, and the product after hole sealing is dried and packaged after water washing and high-pressure cleaning.
Example 2: a hole sealing liquid for metal surface chemical treatment comprises the following raw material components in parts by mass: 1000kg of water, 0.1kg of ammonium acetate and 0.01kg of sodium dihydrogen phosphate, wherein the ratio of ammonium acetate to sodium dihydrogen phosphate is 10: 1,
a hole sealing method of a hole sealing liquid for metal surface chemical treatment comprises the following steps:
s1, adding 1000kg of water into the hole sealing groove, and measuring the pH value and the resistivity of the water, wherein the water can be used when the resistivity is 5M omega;
s2, adding 0.1kg of ammonium acetate and 0.01kg of sodium dihydrogen phosphate into the water obtained in the step S1 to prepare a sealing liquid, uniformly stirring and measuring the pH value of the sealing liquid, wherein the sodium dihydrogen phosphate is used as a water softener and reacts with cations such as calcium, magnesium and the like in water to generate precipitates to be separated out, the ammonium acetate and the sodium dihydrogen phosphate are added into the water to help to keep the pH value of the sealing liquid constant, and the ionized cations can balance anions in the water and maintain the stability of the solution;
s3, adding glacial acetic acid and ammonia water according to the pH value, adding glacial acetic acid to reduce the pH value of the hole sealing liquid when the pH value of the hole sealing liquid is higher, and adding ammonia water to increase the pH value of the hole sealing liquid when the pH value of the hole sealing liquid is lower so that the pH value of the hole sealing liquid is between 5.5 and 6.0;
s4, starting a steam generator, and heating the hole sealing liquid to 95 ℃;
s5, performing electrochemical treatment on a product to be hole sealed, transferring the treated product to hole sealing equipment, enabling the product to be submerged by hole sealing liquid, keeping the product moist during transfer, and starting air to stir;
and S6, calculating the hole sealing time according to the film thickness, wherein the hole sealing time of the product with the film thickness of 1 mu m is 85 seconds, and the product after hole sealing is dried and packaged after water washing and high-pressure cleaning.
Example 3: a hole sealing liquid for metal surface chemical treatment comprises the following raw material components in parts by mass: 1200kg of water, 0.12kg of ammonium acetate and 0.012kg of sodium dihydrogen phosphate, the ratio of ammonium acetate to sodium dihydrogen phosphate being 10: 1.
a method for sealing a hole by using a sealing liquid for chemical treatment of a metal surface:
s1, adding 1200kg of water into the hole sealing groove, and measuring the pH value and the resistivity of the water, wherein the water can be used when the resistivity is 5M omega;
s2, adding 0.12kg of ammonium acetate and 0.012kg of sodium dihydrogen phosphate into the water obtained in the step S1 to prepare a sealing liquid, uniformly stirring and measuring the pH value of the sealing liquid, wherein the sodium dihydrogen phosphate is used as a water softener and reacts with cations such as calcium, magnesium and the like in water to generate precipitates to be separated out, the ammonium acetate and the sodium dihydrogen phosphate are added into the water to help to keep the pH value of the sealing liquid constant, and the ionized cations can balance anions in the water and maintain the stability of the solution;
s3, adding glacial acetic acid and ammonia water according to the pH value, wherein the glacial acetic acid is added to reduce the pH value of the hole sealing liquid when the pH value of the hole sealing liquid is higher, and the ammonia water is added to increase the pH value of the hole sealing liquid when the pH value of the hole sealing liquid is lower, so that the pH value of the hole sealing liquid is between 5.5 and 6.0;
s4, starting a steam generator, and heating the hole sealing liquid to 95 ℃;
s5, performing electrochemical treatment on a product to be hole sealed, transferring the treated product to hole sealing equipment, enabling the product to be submerged by hole sealing liquid, keeping the product moist during transfer, and starting air to stir;
and S6, calculating the hole sealing time according to the film thickness, wherein the hole sealing time of the product with the film thickness of 1 mu m is 85 seconds, and the product after hole sealing is dried and packaged after water washing and high-pressure cleaning.
Comparative example 1:
s1, sealing holes after electrochemical pretreatment of the product;
and S2, observing the microscopic appearance of the processed product.
Comparative example 2:
s1, carrying out electrochemical pretreatment on the product;
s2, placing the product in pure water for hole sealing;
s3, drying after hole sealing is finished, and observing the microscopic appearance of the dried product.
The performance tests of different sealing methods on the product are shown in the following table:
test meter
From the above table it can be seen that: comparative example 1 the product without sealing holes has poorer AC and DC voltage breakdown resistance than the product with sealing holes; compared with the traditional hole sealing of the comparative example 2, the product after hole sealing by the hole sealing liquid has higher AC and DC voltage breakdown resistance, wherein the AC breakdown resistance is 0.43KV higher than that of the traditional hole sealing, and is 0.58KV higher than that of the hole sealing without the hole sealing. The DC breakdown voltage is 1.18KV higher than that of the traditional hole sealing, and is 1.28KV higher than that of the hole sealing without the hole sealing.
FIG. 1 is a surface scanning electron micrograph of example 1, and FIG. 2 is a cross-sectional scanning electron micrograph of example 1. Fig. 3 is a surface electron microscope photograph without sealing in comparative example 1, fig. 4 is a cross-sectional electron microscope photograph without sealing in comparative example 1, fig. 5 is a conventional sealing surface electron microscope photograph in comparative example 2, and fig. 6 is a conventional sealing cross-sectional electron microscope photograph in comparative example 2.
By comparing fig. 1, fig. 3 and fig. 5, it can be seen that a large number of nano-scale micropores exist on the surface of the sample which is not sealed, the micropores are characteristic features after typical electrochemical treatment, and the existence of the micropores significantly affects the AC breakdown voltage resistance and the DC breakdown voltage resistance of the sample, as shown in the data of the test table. In the hole sealing sample, a large number of lamellar structures are stacked on the surface, and the lamellar structures on the surface of the sample adopting the hole sealing liquid are densely and uniformly stacked and have better flatness. The stacking of the lamellar structure on the surface of the sample adopting the traditional hole sealing liquid is loose and uneven, and the flatness is poor, so that the AC breakdown voltage resistance and the DC breakdown voltage resistance of the sample are related to the stacking uniformity of the lamellar structure, and the more dense and uniform the stacking is, the better the AC breakdown voltage resistance and the DC breakdown voltage resistance are.
By comparing fig. 2, fig. 4 and fig. 6, it can be seen that the section photographs of the samples without sealing holes are hollow columnar structures, the sealing samples are all solid structures, and the columnar structures of the samples sealed by the sealing liquid are vertical to the surface of the samples and are uniformly and orderly distributed. The sample columnar structures sealed by the traditional sealing liquid are inclined to the surface of the sample and are distributed disorderly and unevenly, the distribution difference of the sealing structures is reflected on the AC breakdown voltage resistance and the DC breakdown voltage resistance, the sealing structures which are vertically and uniformly distributed have good AC breakdown voltage resistance and DC breakdown voltage resistance, and the sealing structures which are obliquely and unevenly distributed have poor AC breakdown voltage resistance and DC breakdown voltage resistance.
Finally, it is noted that the above-mentioned preferred embodiments illustrate rather than limit the invention, and that, although the invention has been described in detail with reference to the above-mentioned preferred embodiments, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope of the invention as defined by the appended claims.
Claims (9)
1. The hole sealing liquid for the chemical treatment of the metal surface is characterized by comprising the following raw material components: the resistivity is 3-7M omega.cm, and the water and the additive comprise ammonium acetate and sodium dihydrogen phosphate, wherein the mass percent of the ammonium acetate is 0.008-0.012%, and the mass percent of the sodium dihydrogen phosphate is 0.0008-0.0012%.
2. The sealing liquid for chemical treatment of a metal surface according to claim 1, wherein: the ratio of ammonium acetate to sodium dihydrogen phosphate is 10: 1.
3. the sealing liquid for chemical treatment of a metal surface according to claim 1, wherein: the raw material components are calculated according to the mass portion:
800-1200kg of water, 0.08-0.12kg of ammonium acetate and 0.008-0.012kg of sodium dihydrogen phosphate.
4. The method for sealing a sealing liquid for chemical treatment of a metal surface according to claim 3, characterized in that: the method comprises the following steps:
s1, adding 800-1200kg of water into the hole sealing equipment, and measuring the pH value and the resistivity of the water, wherein the resistivity is 3-7M omega cm;
s2, adding 0.08-0.12% of ammonium acetate and 0.008-0.012% of sodium dihydrogen phosphate into the water obtained in the step S1 to prepare a hole sealing liquid, and measuring the pH value of the hole sealing liquid after uniformly stirring;
s3, adding glacial acetic acid and ammonia water according to the pH value to ensure that the pH value of the hole sealing liquid is between 5.5 and 6.0;
s4, starting heating equipment, and heating the hole sealing liquid to 90-100 ℃;
s5, carrying out hole sealing pretreatment on a product to be sealed, transferring the treated product to hole sealing equipment, enabling the product to be submerged by hole sealing liquid, and starting air to stir;
and S6, calculating the hole sealing time according to the film thickness, cleaning the product after hole sealing, drying the product after hole sealing, and packaging the product.
5. The method of preparing a high temperature sealing additive for chemical treatment of a metal surface according to claim 4, wherein: the sealing time in the step S6 is calculated in such a manner that the film thickness of 1 μm is sealed for 80 to 90 seconds.
6. The method of preparing a high temperature sealing additive for chemical treatment of a metal surface according to claim 4, wherein: in the step S6, the product is dried by blowing and cleaned before packaging, and two steps of water washing and high-pressure cleaning are needed.
7. The method of preparing a high temperature sealing additive for chemical treatment of a metal surface according to claim 4, wherein: and in the step S5, the surface needs to be kept wet when the product is placed in the hole sealing liquid after being cleaned.
8. The method of preparing a high temperature sealing additive for chemical treatment of a metal surface according to claim 4, wherein: in step S3, glacial acetic acid is added when the pH value is higher, and ammonia water is added when the pH value is lower.
9. The method of preparing a high temperature sealing additive for chemical treatment of a metal surface according to claim 4, wherein: the hole sealing equipment in the step S1 is a hole sealing groove, and the heating equipment in the step S4 is a steam generator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210683618.7A CN114990666B (en) | 2022-06-17 | 2022-06-17 | Hole sealing method for metal surface chemical treatment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210683618.7A CN114990666B (en) | 2022-06-17 | 2022-06-17 | Hole sealing method for metal surface chemical treatment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114990666A true CN114990666A (en) | 2022-09-02 |
| CN114990666B CN114990666B (en) | 2023-09-05 |
Family
ID=83035801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210683618.7A Active CN114990666B (en) | 2022-06-17 | 2022-06-17 | Hole sealing method for metal surface chemical treatment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114990666B (en) |
Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09300838A (en) * | 1996-03-12 | 1997-11-25 | Konica Corp | Substrate for photosensitive lithographic printing plate and its manufacture, and photosensitive lithographic printing plate and its processing method |
| JP2005265501A (en) * | 2004-03-17 | 2005-09-29 | Fuji Photo Film Co Ltd | Method of measuring concentrations of fluorine compounds and phosphoric acid compounds in aqueous solution |
| US20090061218A1 (en) * | 2007-08-28 | 2009-03-05 | Aicoa Inc. | Corrosion resistant aluminum alloy substrates and methods of producing the same |
| JP2015004084A (en) * | 2013-06-19 | 2015-01-08 | 奥野製薬工業株式会社 | Sealing liquid for anodic oxidation film of aluminum alloy |
| CN104451822A (en) * | 2014-11-19 | 2015-03-25 | 东莞市日野化工科技有限公司 | Hole-sealing agent and preparation method thereof |
| CN105088311A (en) * | 2015-08-06 | 2015-11-25 | 深圳前海艾丽优科技有限公司 | Aluminum alloy nickel-free environment-friendly hole sealing agent |
| JP2016145383A (en) * | 2015-02-06 | 2016-08-12 | 栗田工業株式会社 | Surface treatment method for aluminum or aluminum alloy, and surface treatment device |
| CN107815717A (en) * | 2017-09-13 | 2018-03-20 | 上海申和热磁电子有限公司 | A kind of ashless pure water method for sealing of aluminium alloy anode oxide |
| CN109402702A (en) * | 2018-10-17 | 2019-03-01 | 佛山市南海双成金属表面技术有限公司 | Deashing agent and preparation method thereof after a kind of closing of aluminium alloy anode oxide technique |
| CN109652836A (en) * | 2019-02-26 | 2019-04-19 | 国际铝业(厦门)有限公司 | A kind of process of surface treatment of 6063 aluminium alloy extrusions |
| CN110373626A (en) * | 2019-08-21 | 2019-10-25 | 重庆臻宝实业有限公司 | The aluminum oxide coating layer method for sealing of anti-plasma corrosion |
| CN110512258A (en) * | 2019-10-11 | 2019-11-29 | 东莞市慧泽凌化工科技有限公司 | A kind of no nickel hole-sealing technology |
| CN114015967A (en) * | 2021-11-09 | 2022-02-08 | 重庆臻宝实业有限公司 | Preparation method of low-porosity yttrium oxide coating |
-
2022
- 2022-06-17 CN CN202210683618.7A patent/CN114990666B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09300838A (en) * | 1996-03-12 | 1997-11-25 | Konica Corp | Substrate for photosensitive lithographic printing plate and its manufacture, and photosensitive lithographic printing plate and its processing method |
| JP2005265501A (en) * | 2004-03-17 | 2005-09-29 | Fuji Photo Film Co Ltd | Method of measuring concentrations of fluorine compounds and phosphoric acid compounds in aqueous solution |
| US20090061218A1 (en) * | 2007-08-28 | 2009-03-05 | Aicoa Inc. | Corrosion resistant aluminum alloy substrates and methods of producing the same |
| JP2015004084A (en) * | 2013-06-19 | 2015-01-08 | 奥野製薬工業株式会社 | Sealing liquid for anodic oxidation film of aluminum alloy |
| CN104451822A (en) * | 2014-11-19 | 2015-03-25 | 东莞市日野化工科技有限公司 | Hole-sealing agent and preparation method thereof |
| JP2016145383A (en) * | 2015-02-06 | 2016-08-12 | 栗田工業株式会社 | Surface treatment method for aluminum or aluminum alloy, and surface treatment device |
| CN105088311A (en) * | 2015-08-06 | 2015-11-25 | 深圳前海艾丽优科技有限公司 | Aluminum alloy nickel-free environment-friendly hole sealing agent |
| CN107815717A (en) * | 2017-09-13 | 2018-03-20 | 上海申和热磁电子有限公司 | A kind of ashless pure water method for sealing of aluminium alloy anode oxide |
| CN109402702A (en) * | 2018-10-17 | 2019-03-01 | 佛山市南海双成金属表面技术有限公司 | Deashing agent and preparation method thereof after a kind of closing of aluminium alloy anode oxide technique |
| CN109652836A (en) * | 2019-02-26 | 2019-04-19 | 国际铝业(厦门)有限公司 | A kind of process of surface treatment of 6063 aluminium alloy extrusions |
| CN110373626A (en) * | 2019-08-21 | 2019-10-25 | 重庆臻宝实业有限公司 | The aluminum oxide coating layer method for sealing of anti-plasma corrosion |
| CN110512258A (en) * | 2019-10-11 | 2019-11-29 | 东莞市慧泽凌化工科技有限公司 | A kind of no nickel hole-sealing technology |
| CN114015967A (en) * | 2021-11-09 | 2022-02-08 | 重庆臻宝实业有限公司 | Preparation method of low-porosity yttrium oxide coating |
Non-Patent Citations (3)
| Title |
|---|
| YUSUKE SUZUKI等: "Corrosion-Resistant Porous Alumina Formed via Anodizing Aluminum in Etidronic Acid and Its Pore-Sealing Behavior in Boiling Water", 《JOURNAL OF THE ELECTROCHEMICAL SOCIETY》, vol. 166, no. 12, pages 261 * |
| 刘 莉等: "磷酸盐封孔处理对铝合金阳极氧化膜 耐蚀性能的影响", 《腐蚀科学与防护技术》, vol. 28, no. 2, pages 129 - 134 * |
| 张策等: "铝及铝合金阳极氧化膜封孔技术机理、应用及研究进展", 《电镀与涂饰》, vol. 41, no. 18, pages 1305 - 1312 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114990666B (en) | 2023-09-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101246779B (en) | Production method of medium and high pressure formed foil | |
| CN113458143A (en) | Method for preparing aluminum electrolytic capacitor anode foil by using cold rolling mill | |
| CN107059095A (en) | A kind of compound electrophoresis suspensioning liquid and preparation method thereof | |
| CN107488871B (en) | The hair engaging aperture caustic solution of aluminium foil and the manufacturing method of etched foil | |
| CN102324324A (en) | Method for preparing 100-150V of low-voltage foil | |
| CN114990666A (en) | Hole sealing liquid and hole sealing method for metal surface chemical treatment | |
| CN115188597A (en) | Preparation method of sintered anode material based on multi-particle size matching | |
| CN101425384B (en) | Low voltage aluminum electrolysis capacitor formed foil production method | |
| CN109554746B (en) | Method for manufacturing high-pressure high-specific-volume corrosion foil | |
| TW201945280A (en) | Graphite composite conductive bar material and method for producing graphene using the same | |
| CN116623250A (en) | Formation foil for aluminum electrolytic capacitor and preparation method thereof | |
| CN113463078B (en) | Preparation method and application of antioxidant liquid containing polyhydroxy organic matters | |
| CN1301519C (en) | Method for mfg negative electrode foil of aluminium electrolytic capacitor | |
| CN103243319A (en) | Super-hydrophobic phosphating film aluminum alloy material and preparation method thereof | |
| CN110922066A (en) | Deplating agent and preparation method and application thereof | |
| CN109055933B (en) | Powder liquid phase plasma surface modification method and device thereof | |
| CN101359536B (en) | Method of preparing anode foil of capacitor | |
| CN113668024A (en) | Electroplating dehydrating agent and preparation method thereof | |
| CN106784131A (en) | Solar battery sheet based on N-type silicon chip and preparation method thereof | |
| JPS5817869A (en) | Production of aluminum fin for heat exchanger | |
| CN107931073B (en) | Treatment method for corrosion-resistant modification of aluminum alloy surface | |
| CN111105933B (en) | High-compactness, acid-resistant and oxidation-resistant solid capacitor carbon foil production process | |
| Kasilingam et al. | Nano analyses of adsorbed film onto carbon steel | |
| CN117524736B (en) | Method for producing electrode | |
| CN114141541B (en) | Electrode foil smooth edge forming method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 401326 no.66-72, sendi Avenue, Xipeng Town, Jiulongpo District, Chongqing Applicant after: Chongqing Zhenbao Technology Co.,Ltd. Address before: 401326 no.66-72, sendi Avenue, Xipeng Town, Jiulongpo District, Chongqing Applicant before: CHONGQING ZHENBAO INDUSTRIAL Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |