CN114988718A

CN114988718A - Processing-resistant high-permeability tempered coated glass, manufacturing method thereof and hollow glass piece

Info

Publication number: CN114988718A
Application number: CN202210737953.0A
Authority: CN
Inventors: 刘霄枫
Original assignee: Tianjin Qibin Energy Saving Glass Co ltd
Current assignee: Tianjin Qibin Energy Saving Glass Co ltd
Priority date: 2022-06-27
Filing date: 2022-06-27
Publication date: 2022-09-02

Abstract

The invention discloses a processing-resistant high-permeability tempered coated glass, a manufacturing method thereof and a hollow glass piece, wherein the manufacturing method comprises the following steps: respectively carrying out vacuum magnetron sputtering on the surface of the glass substrate by using a target material, and sequentially carrying out sputtering to form a first dielectric layer, sputtering to form a functional layer, sputtering to form a protective layer and sputtering to form a second dielectric layer; the step of forming the protective layer in the sputtering process comprises the following steps: sputtering to form a NiCr layer, and sputtering to form an AZO layer on the outer side of the NiCr layer; the resistivity of the target in the step of forming the AZO layer by sputtering is less than 2.4 multiplied by 10 ^‑3 Omega cm, compared with AZO target material (with 12-16% of vacancy oxygen content) adopted in the prior art, the AZO target material has higher vacancy oxygen content (more than 20%), is more tightly combined with nickel and chromium in the sputtering process, has better oxygen resistance in the toughening process, effectively ensures the toughening processability of glass by using the protective layer, and can greatly reduce the use of nickel and chromium so as to effectively improve the transmittance before and after toughening.

Description

Processing-resistant high-permeability tempered coated glass, manufacturing method thereof and hollow glass piece

Technical Field

The invention relates to the technical field of coated glass, in particular to processing-resistant high-permeability tempered coated glass, a manufacturing method thereof and a hollow glass piece.

Background

Glass as a building material needs to be tempered due to the requirement on strength in the daily use process. The traditional coated glass has adverse effects such as oxidation and crystal form change on a film layer due to high tempering temperature, and then phenomena such as demoulding and oxidation occur.

Disclosure of Invention

The invention mainly aims to provide a manufacturing method of processing-resistant high-permeability tempered coated glass, and aims to solve the technical problems that in the prior art, the high tempering temperature of the coated glass can cause adverse effects such as oxidation and crystal change on a film layer, so that the phenomena such as demoulding and oxidation are caused.

In order to realize the purpose, the manufacturing method of the processing-resistant high-permeability tempered coated glass provided by the invention comprises the following steps: respectively carrying out vacuum magnetron sputtering on the surface of the glass substrate by using a target material, and sequentially carrying out sputtering to form a first dielectric layer, sputtering to form a functional layer, sputtering to form a protective layer and sputtering to form a second dielectric layer; the step of forming the protective layer in the sputtering process comprises the following steps: sputtering to form a NiCr layer, and sputtering to form an AZO layer on the outer side of the NiCr layer; the resistivity of the target in the step of forming the AZO layer by sputtering is less than 2.4 multiplied by 10 ^-3 Ω.cm。

Optionally, the step of forming the second dielectric layer by sputtering includes the steps of:

sputter forming a first SiN _x A layer;

in the first SiN _x And sputtering the outer side of the layer to form a ZrO layer.

Optionally, the step of forming the first dielectric layer by sputtering includes the steps of:

sputtering to form SiZrN _x A layer;

in the SiZrN _x Sputtering the outside of the layer to form a second SiN layer _x A layer;

in the second SiN _x Sputtering of the outside of the layer to form ZnAlO _x A layer.

Optionally, the target in the step of sputtering to form the AZO layer is an aluminum-doped zinc-aluminum oxide ceramic target.

Optionally, a thickness ratio of the first dielectric layer to the second dielectric layer is (1.1-1.5): 1;

and/or the thickness of the first dielectric layer is 35nm-50 nm;

and/or the thickness of the second dielectric layer is 35nm-50 nm;

and/or the thickness of the functional layer is 6nm-8 nm;

and/or the thickness of the protective layer is 6nm-10 nm;

and/or the thickness of the AZO layer is 5nm-8 nm;

and/or the thickness of the NiCr layer is 1nm-2 nm.

Optionally, the functional layer is an Ag layer; the functional layer and the NiCr layer form a metal layer, and the thickness of the metal layer is 8-11 nm.

Optionally, the SiZrN _x The thickness of the layer is 5nm-8 nm;

and/or, the second SiN _x The thickness of the layer is 20nm-25 nm;

and/or, the ZnAlO _x The thickness of the layer is 15nm-20 nm.

Optionally, the first SiN _x The thickness of the layer is 34nm-37 nm;

and/or the thickness of the ZrO layer is 2nm-5 nm.

The invention also provides the processing-resistant high-permeability tempered coated glass and a manufacturing method of the processing-resistant high-permeability tempered coated glass.

The invention also provides a hollow glass piece, and the processing-resistant high-permeability tempered coated glass prepared by the manufacturing method of the processing-resistant high-permeability tempered coated glass.

According to the technical scheme, the NiCr/AZO composite structure is used as a protective layer behind the functional layer, so that the resistivity of the target material for manufacturing the AZO layer is less than 2.4 multiplied by 10 ^-3 Cm, the resistivity change of the target is caused by the formation of oxygen vacancies, so the resistivity of the target can be used for representing the number of the oxygen vacancies, compared with the AZO target (the content of the oxygen in the vacancies is 12-16 percent, and the resistivity is higher than 2.4 multiplied by 10) adopted in the prior art ^-3 Omega.cm) with higher vacancy oxygen content (more than 20 percent), the combination with nickel and chromium is tighter in the sputtering process, the oxygen resistance is better in the toughening process, the use of the protective layer effectively ensures the toughening processability of the glass and can greatly reduce the use of nickel and chromium, thereby effectively improving the transmittance before and after toughening.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.

Fig. 1 is a schematic structural diagram of an embodiment of the processing-resistant high-transmittance tempered coated glass of the invention.

The reference numbers illustrate:

1. a glass substrate; 2. a first dielectric layer; 21. SiZrN _x A layer; 22. second SiN _x A layer; 23. ZnAlO _x A layer; 3. a functional layer; 4. a protective layer; 41. a NiCr layer; 42. an AZO layer; 5. a second dielectric layer; 51. first SiN _x A layer; 52. a ZrO layer.

The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It should be noted that all directional indicators (such as upper, lower, left, right, front and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.

In the present invention, unless otherwise explicitly stated or limited, the terms "connected", "fixed", and the like are to be understood broadly, for example, "fixed" may be fixedly connected, may be detachably connected, or may be integrated; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In addition, the descriptions related to "first", "second", etc. in the present invention are only for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.

Further, the expression "and/or" as used throughout is intended to include three juxtaposed aspects, exemplified by "A and/or B," including either the A aspect or the B aspect, or both A and B. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.

The invention provides a manufacturing method of processing-resistant high-permeability toughened coated glass.

Referring to fig. 1, fig. 1 is a schematic structural diagram of an embodiment of a processing-resistant high-transmittance tempered coated glass of the present invention.

In the embodiment of the invention, the manufacturing method of the processing-resistant high-permeability toughened coated glass comprises the following steps: respectively carrying out vacuum magnetron sputtering on the surface of the glass substrate 1 by using a target material, sequentially carrying out sputtering to form a first dielectric layer 2, a functional layer 3,Sputtering to form a protective layer 4 and sputtering to form a second dielectric layer 5; the step of forming the protective layer 4 by sputtering includes the steps of: sputtering to form a NiCr layer 41, and sputtering to form an AZO layer 42 on the outer side of the NiCr layer 41; the resistivity of the target in the step of forming the AZO layer 42 by sputtering is less than 2.4 x 10 ^-3 Ω.cm。

According to the technical scheme, the NiCr/AZO composite structure is used as a protective layer behind the functional layer, so that the resistivity of the target material for manufacturing the AZO layer is smaller than 2.4 multiplied by 10 ^-3 Omega cm, higher vacancy oxygen content (more than 20 percent), tighter combination with nickel and chromium in the sputtering process and better oxygen resistance in the toughening process, and the use of the protective layer effectively ensures the toughening processability of the glass and can greatly reduce the use of nickel and chromium, thereby effectively improving the transmittance before and after toughening.

In the embodiment of the present invention, the step of forming the second dielectric layer 5 by sputtering includes the following steps:

sputtering to form first SiN _x A layer 51;

in the first SiN _x A ZrO layer 52 is sputtered on the outside of layer 51.

The second dielectric layer 5 prepared by the step of sputtering the second dielectric layer 5 comprises first SiN _x Layer 51 and first SiN layer _x A ZrO layer 52 outside the layer 51. The thermal processing stability of the film is improved, and on the premise of ensuring the proportion of the structure of the film, the second medium layer 5 is made of SiN _x ZrO is added later, and has stronger hardness and smoothness, so that the scratch resistance and the oxidation resistance of the glass can be effectively improved. The ultrahigh permeable toughened single-silver low-emissivity coated glass which is resistant to processing, easy to store and good in transportation is plated according to the scheme.

In the embodiment of the invention, the step of forming the first dielectric layer 2 by sputtering comprises the following steps:

sputtering to form SiZrN _x A layer 21;

in SiZrN _x Sputtering outside layer 21 to form second SiN _x A layer 22;

in the second SiN _x Sputtering of ZnAlO on the outside of layer 22 _x Layer 23.

The first dielectric layer 2 prepared by the step of sputtering the first dielectric layer 2 is SiZrN _x +SiN _x +ZnAlO _x Composite structure of SiZrN _x The layer 21 can effectively increase the binding force between the film and the glass to ensure that the film is firmer, ZnAlO _x The layer 23 has a good smooth structure and a good refractive index, increasing ZnAlO _x The proportion plays a role in improving the performance and the permeability of the functional silver layer.

The manufacturing method comprises the step of carrying out vacuum magnetron sputtering on the surface of a glass substrate 1 by using a target material in a vacuum environment to form a first dielectric layer 2, a functional layer 3, a protective layer 4 and a second dielectric layer 5 in sequence, thereby forming a coating layer.

In the above manufacturing method of the processing-resistant high-permeability tempered coated glass, during magnetron sputtering, the target material used in the cathode position includes, but is not limited to, a silicon-zirconium target, a silicon-aluminum target, a zinc-aluminum target, a silver target, a nickel-chromium target, and an aluminum-doped zinc-aluminum oxide ceramic target. The corresponding target material can be selected according to the material to be sputtered.

Optionally, the NiCr layer is a nickel chromium target. The AZO layer 42 is an aluminum doped zinc aluminum oxide ceramic target. The functional layer 3 is a silver target. First SiN _x Layer 51 and second SiN _x Layer 22 is a silicon target. The ZrO layer 52 is a zirconia target. SiZrN _x Layer 21 is a silicon zirconium target. ZnAlO _x Layer 23 is a zinc aluminum target.

In the preparation method, the silicon-aluminum target is a silicon-aluminum alloy target with a silicon-aluminum weight ratio of 90:10, the silver purity of the silver target is 99.99%, the nickel-chromium target is a nickel-chromium alloy target with a nickel-chromium weight ratio of 80:20, and the zinc-aluminum, AZO, zirconia targets and the like. Wherein, the silver target and the nickel-chromium target are plane targets, and the silicon-aluminum alloy target is a rotary target.

In the manufacturing method of the processing-resistant high-permeability tempered coated glass, during magnetron sputtering, power control is used, in order to ensure stable sputtering and not to damage a target material, the power of a silicon-aluminum target and a silicon-zirconium target is 0-70 Kw, and the ratio of high-purity argon to high-purity nitrogen in a sputtering process gas is 1: 1.2; the power of the zinc-aluminum target is 0-70 Kw, the ratio of the high-purity argon to the high-purity oxygen in the sputtering process gas is 1: 1.2, and the sputtering pressure is (2-5) multiplied by 10 ^-3 mbar; the power of the silver target is 0-20 Kw, the power of the nickel-chromium target is 0-20 Kw, the power of the AZO is 0-30 Kw, the sputtering process gas is high-purity argon, and the sputtering pressure is (2-5) multiplied by 10 ^-3 mbar. Zirconium oxideThe target power is 0-50 Kw, the ratio of high-purity argon and high-purity oxygen in the sputtering process gas is 1: 0.05, sputtering pressure of (2-5) × 10 ^-3 mbar。

Preferably, the thickness of the protective layer 4 is 6nm to 10 nm. Specifically, the thickness of the protective layer 4 is 6nm, 8nm, or 10nm, and may be any of 6nm to 10 nm.

Preferably, the AZO layer 42 is 5nm to 8nm thick. Specifically, the AZO layer 42 has a thickness of 5nm, 6nm, or 8nm, or may have a thickness of any one of 5nm to 8 nm.

Preferably, the NiCr layer 41 has a thickness of 1nm to 2 nm. Specifically, the thickness of the NiCr layer 41 is 1nm, 1.5nm, or 2nm, and may be any thickness from 1nm to 2 nm.

Preferably, the thickness of the second dielectric layer 5 is 35nm to 50 nm. Specifically, the thickness of the second dielectric layer 5 is 35nm, 40nm, 50nm or 50nm, or may be any thickness of 35nm to 50 nm.

Preferably, the first SiN _x The thickness of layer 51 is 34nm-37 nm. Specifically, first SiN _x The thickness of the layer 51 is 34nm, 35nm or 37nm, and may be any of 34nm to 37 nm.

Preferably, the thickness of the ZrO layer 52 is 2nm to 5 nm. Specifically, the thickness of the ZrO layer 52 is 2nm, 3nm, or 5nm, and may be any of 2nm to 5 nm.

Preferably, the thickness of the first dielectric layer 2 is 35-50 nm. Specifically, the thickness of the first dielectric layer 2 is 35nm, 40nm, 50nm or 50nm, or may be any thickness from 35nm to 50 nm.

Preferably, SiZrN _x The thickness of layer 21 is 5nm to 8 nm. SiZrN _x The thickness of the layer 21 is 5nm, 6nm or 8nm, and may be any of 5nm to 8 nm.

Preferably, the second SiN _x The thickness of layer 22 is 20nm-25 nm. Second SiN _x The thickness of the layer 22 is 20nm, 22nm, 24nm or 25nm, and may be any of 20nm to 25 nm.

Preferably, ZnAlO _x The thickness of layer 23 is 15nm-20 nm. ZnAlO _x The thickness of the layer 23 is 15nm, 18nm or 20nm, and may be any of 15nm to 20 nm.

Preferably, the thickness ratio of the first dielectric layer 2 to the second dielectric layer 5 in the embodiment of the present invention is (1.1-1.5): 1. in this case, the mechanical properties and permeability of the present invention are the best. Specifically, the above thickness ratio may be 1.1: 1. 1.3: 1 or 1.5: 1, can also be (1.1-1.5): 1, in any ratio.

Further, the functional layer 3 in the embodiment of the present invention is an Ag layer. The thickness of the functional layer 3 is preferably 6 to 8nm, in particular, the thickness of the functional layer 3 is 6nm, 7nm or 8nm, and may be any of 6 to 8 nm. The main function of the glass is to reduce the radiance of the coated glass by utilizing the low-radiation performance of Ag, filter sunlight into a cold light source and improve the transmission performance.

Preferably, the functional layer 3 and the NiCr layer 41 in the embodiment of the present invention constitute a metal layer, the thickness of the metal layer is 8 to 11nm, the thickness of the metal layer is 8nm, 10nm or 11nm, or any one of 8 to 11nm, and at this time, the transmittance is in the highest range.

The invention has the following advantages:

1. the processing-resistant high-transmittance toughened coated glass is blue-gray in appearance color, transparent and fresh, and is coordinated with the surrounding sky, buildings and other environments.

2. According to the processing-resistant high-permeability tempered coated glass 6mm single piece, the transmittance T before tempering is 83-84%, the transmittance a is-1.5 to-2.5, and the transmittance b is 0.5 to-1; the color L of the glass surface is 26-30, a is-0.8-1.8, and b is-6-8. The color of the glass surface of a single piece of 6mm coated glass is blue gray, and the radiance is 0.14-0.16.

3. The plated processing-resistant high-permeability toughened coated glass film has good heat resistance and stable hot processing performance, and is suitable for flat toughening and bent toughening processes of glass. After the toughening process, the film is stable and does not have the defects of cracking, oxidation, demoulding, scratching and the like.

4. After the 6mm single piece of the processing-resistant high-permeability tempered coated glass is subjected to thermal processing tempering treatment, the transmittance T is 87-88%, a is-1.5-2.5, and b is 0.5-1; the glass surface has reflection color L of 24-28, a of-0.5-1, b of-6.5-8.5, blue-gray color and single-chip radiation rate of 0.13-0.15.

5. The processing-resistant high-permeability tempered coated glass has the advantages that the transmittance after tempering reaches more than 87%, the hot processing performance and the mechanical performance are excellent, the problem of high processing difficulty of high-permeability single-silver low-radiation glass is solved, and the universality and the adaptability of the high-permeability tempered single-silver low-radiation coated glass are improved.

6. The processing-resistant high-permeability tempered coated glass has the advantages that the front side surface color difference delta a is less than 2.5, the small-angle color deviation is small, the color deviation is small when the glass is observed at different angles, the whole color is uniform, and the whole attractiveness of the glass is improved.

In the embodiment of the invention, the processing-resistant high-permeability toughened coated glass comprises a glass substrate 1, and a first dielectric layer 2, a functional layer 3, a protective layer 4 and a second dielectric layer 5 are sequentially arranged from at least one side of the glass substrate 1 to the outside. The protective layer 4 includes an NiCr layer 41 and an AZO layer 42 provided outside the NiCr layer 41.

For a further understanding of the invention, preferred embodiments of the invention are described below in conjunction with specific examples, but it should be understood that the description is intended to further illustrate the features and advantages of the invention, and not to limit the claims.

Example 1

The manufacturing method of the processing-resistant high-permeability toughened coated glass comprises the following steps: respectively carrying out vacuum magnetron sputtering on the surface of the glass substrate 1 by using a target material, and sequentially carrying out sputtering to form a first dielectric layer 2, sputtering to form a functional layer 3, sputtering to form a protective layer 4 and sputtering to form a second dielectric layer 5; the step of forming the protective layer 4 in sputtering includes the steps of: a NiCr layer 41 is formed by sputtering, an AZO layer 42 is formed by sputtering outside the NiCr layer 41, and the resistivity of the target in the step of forming the AZO layer by sputtering is 2.352 multiplied by 10 ^-3 Omega cm. Formed by sputteringThe first dielectric layer 2 comprises the following steps: sputtering to form SiZrN _x A layer 21; in SiZrN _x Sputtering outside layer 21 to form second SiN _x A layer 22; in the second SiN _x Sputtering of ZnAlO on the outside of layer 22 _x Layer 23. The step of forming the second dielectric layer 5 by sputtering comprises the following steps: sputtering to form first SiN _x A layer 51; in the first SiN _x A ZrO layer 52 is sputtered on the outside of layer 51.

The processing-resistant high-permeability tempered coated glass of the embodiment is shown in fig. 1: glass substrate 1+ SiZrN _x Layer 21+ first SiN _x Layer 51+ ZnAlO _x Layer 23+ Ag layer + NiCr layer 41+ AZO layer 42+ second SiN _x Layer 22+ ZrO layer 52.

SiZrN of the first dielectric layer 2 _x 4nm thick, first SiN _x Layer 51 thickness 22nm, ZnAlO _x The thickness is 20; the thickness of the Ag layer of the functional layer 3 is 7 nm; the thickness of the NiCr layer 41 in the protective layer 4 is 1.2nm, and the thickness of the AZO layer is 5 nm; second SiN for the second dielectric layer 5 _x The layer 22 had a thickness of 39nm and the ZrO had a thickness of 3 nm.

The 6mm coated glass single sheet with the film layer structure has stable hot processing performance and does not have the defects of cracking, oxidation, demoulding, scratching and the like. After tempering treatment by a hot processing technology, the transmittance T is 87.8 percent, a is-1.5, and b is 0.6; glass surface color L was 28.4, a was-0.2, b was-7.5. The resultant hollow exterior color was 33.76, a was-0.9, and b was-7.03. Emissivity 0.14.

Example 2

Example 2 differs from example 1 in that: the resistivity of the target in the step of forming the AZO layer by sputtering was 2.279X 10 ^-3 Ω.cm。

In addition, SiZrN of the first dielectric layer 2 _x Thickness of 3nm, first SiN _x Layer 51 is 20nm thick, ZnAlO _x A thickness of 18; the thickness of the Ag layer of the functional layer 3 is 6 nm; the thickness of the NiCr layer 41 in the protective layer 4 is 1.4nm, and the thickness of the AZO layer is 5 nm; second SiN of second dielectric layer 5 _x The layer 22 had a thickness of 36nm and the ZrO 3 nm.

The 6mm coated glass single sheet with the film layer structure has stable hot processing performance and does not have the defects of cracking, oxidation, demoulding, scratching and the like. After tempering treatment by a hot processing technology, the transmittance T is 87.2 percent, a is-1.2, and b is 0.9; glass surface color L was 28.2, a was-0.6, b was-5.5. The resultant hollow exterior color L was 33.46, a was-1.3, and b was-4.9. The emissivity is 0.15.

Example 3

Example 3 differs from example 1 in that:

SiZrN of the first dielectric layer 2 _x Thickness of 4nm, first SiN _x Layer 51 thickness 23nm, ZnAlO _x A thickness of 21; the thickness of the Ag layer of the functional layer 3 is 6.5 nm; the thickness of the NiCr layer 41 in the protective layer 4 is 1.8nm, and the thickness of the AZO layer is 4 nm; second SiN for the second dielectric layer 5 _x The layer 22 had a thickness of 35nm and the ZrO thickness was 4 nm.

The 6mm coated glass single sheet with the film layer structure has stable hot processing performance and does not have the defects of cracking, oxidation, demoulding, scratching and the like. After the tempering treatment by the hot processing technology, the transmittance T is 86.8 percent, a is-1.8 percent, and b is 0.2 percent; glass surface color L is 29.4, a is-1.4, b is-8.3. The resultant hollow exterior color L was 34.78, a was-2, and b was-7.83. Emissivity 0.14.

The film structures and thicknesses of examples 1-3 are shown in Table 2. Please refer to table 3 for color values of the tempered 6mm coated glass provided in examples 1-3. The color values and reflectivities of the 6mm coated glass sheets provided in examples 1-3 and the 6mm white glass synthesized into hollow glass are shown in Table 4.

TABLE 2

TABLE 3

TABLE 4

The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all equivalent modifications made by the present specification and the attached drawings or directly/indirectly applied to other related technical fields under the inventive concept are included in the scope of the present invention.

Claims

1. The manufacturing method of the processing-resistant high-permeability toughened coated glass is characterized by comprising the following steps of: respectively carrying out vacuum magnetron sputtering on the surface of the glass substrate by using a target material, and sequentially carrying out sputtering to form a first dielectric layer, sputtering to form a functional layer, sputtering to form a protective layer and sputtering to form a second dielectric layer; the step of forming a protective layer in the sputtering process comprises the following steps: sputtering to form a NiCr layer, and sputtering to form an AZO layer on the outer side of the NiCr layer; the resistivity of the target in the step of forming the AZO layer by sputtering is less than 2.4 multiplied by 10 ^-3 Ω.cm。

2. The method for manufacturing the processing-resistant high-permeability tempered coated glass as claimed in claim 1, wherein the step of forming the second dielectric layer by sputtering comprises the steps of:

sputtering to form first SiN _x A layer;

3. The method for manufacturing the processing-resistant high-permeability tempered coated glass as claimed in claim 1, wherein the step of sputtering to form the first dielectric layer comprises the steps of:

sputtering to form SiZrN _x A layer;

in the second SiN _x Sputtering of the outside of the layer to form ZnAlO _x And (3) a layer.

4. The method for manufacturing the processing-resistant highly permeable tempered coated glass according to claim 1, wherein the target in the step of forming the AZO layer by sputtering is an aluminum-doped zinc-aluminum oxide ceramic target.

5. The method for manufacturing the processing-resistant high-permeability tempered coated glass as claimed in any one of claims 1 to 3, wherein the thickness ratio of the first dielectric layer to the second dielectric layer is (1.1-1.5): 1;

and/or the thickness of the first dielectric layer is 35nm-50 nm;

and/or the thickness of the second dielectric layer is 35nm-50 nm;

and/or the thickness of the functional layer is 6nm-8 nm;

and/or the thickness of the protective layer is 6nm-10 nm;

and/or the thickness of the AZO layer is 5nm-8 nm;

and/or the thickness of the NiCr layer is 1nm-2 nm.

6. The method for manufacturing the processing-resistant high-permeability tempered coated glass according to any one of claims 1 to 3, wherein the functional layer is an Ag layer; the functional layer and the NiCr layer form a metal layer, and the thickness of the metal layer is 8nm-11 nm.

7. The method according to claim 3, wherein the SiZrN is a silicon nitride, or silicon nitride _x The thickness of the layer is 5-8 nm;

and/or, the second SiN _x The thickness of the layer is 20nm-25 nm;

and/or, the ZnAlO _x The thickness of the layer is 15nm-20 nm.

8. The method of claim 2, wherein the first SiN is in the form of a coated glass with high processing resistance and high transmittance _x The thickness of the layer is 34nm-37 nm;

and/or the thickness of the ZrO layer is 2nm-5 nm.

9. A processing-resistant high-permeability tempered coated glass, which is characterized by comprising the manufacturing method of the processing-resistant high-permeability tempered coated glass as claimed in any one of claims 1 to 8.

10. A hollow glass member, characterized in that, the hollow glass member is provided with the processing-resistant high-permeability tempered coated glass prepared by the manufacturing method of the processing-resistant high-permeability tempered coated glass of any one of claims 1 to 8.