CN114976875A - Semiconductor laser and display device thereof - Google Patents

Semiconductor laser and display device thereof Download PDF

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Publication number
CN114976875A
CN114976875A CN202210450686.9A CN202210450686A CN114976875A CN 114976875 A CN114976875 A CN 114976875A CN 202210450686 A CN202210450686 A CN 202210450686A CN 114976875 A CN114976875 A CN 114976875A
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layer
peak
electron blocking
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semiconductor laser
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王俞授
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Xiamen Sanan Optoelectronics Technology Co Ltd
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Xiamen Sanan Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention discloses a semiconductor laser and a display device thereof, comprising a first semiconductor layer, a second semiconductor layer and an active layer positioned between the first semiconductor layer and the second semiconductor layer; a first waveguide layer is arranged between the first semiconductor layer and the active layer, and a second waveguide layer is arranged between the second semiconductor layer and the active layer; an electron blocking layer is arranged between the second waveguide layer and the second semiconductor layer, at least one part of the electron blocking layer close to the second semiconductor layer is a P-type doped layer, and the composition of the P-type doped layer is more than 1E19cm ‑3 The P-type doping concentration of one side, close to the second semiconductor layer, of the electron blocking layer is higher than the P-type doping concentration of the side, far away from the second semiconductor layer, of the electron blocking layer, and therefore the P-type doping is prevented from diffusing to the second waveguide layer, and light absorption of the second waveguide layer is prevented from rising.

Description

Semiconductor laser and display device thereof
Technical Field
The present disclosure relates to semiconductor technologies, and particularly to a laser diode and a display device thereof.
Background
Group III nitrides, represented by gallium nitride, are direct transition wide band gap semiconductor materials, have a wide energy band, and are ideal materials for fabricating lasers from the ultraviolet band to the green band. The gallium nitride-based blue-green light laser has the advantages of small volume, high integration level, high brightness, high resolution and the like, and the distribution of the light field and the photon limiting capability are key factors influencing the performance of the gallium nitride-based blue-green light laser.
In the conventional gan-based blue-green laser, the electron blocking layer plays a role in suppressing the electron overflow in the laser and also needs to be compatible with the hole injection, wherein P-type doping such as magnesium is doped in the electron blocking layer as a main P-type hole providing layer.
However, the doping concentration is too low to effectively provide sufficient hole concentration to affect the light emitting efficiency due to the poor activation efficiency of magnesium, while the doping concentration is too high to cause optical absorption to affect the brightness of laser, and the device is affected by heat during long-term operation, so that a trace amount of magnesium element diffuses into the active layer to form non-radiative recombination defects, thereby causing light decay.
Disclosure of Invention
In order to solve the technical problem, the invention provides a semiconductor laser, which mainly relates to a blue-green laser, wherein the light-emitting wavelength of the laser is 430nm to 550 nm. The electron blocking layer is arranged and comprises AlGaN and/or AlGaN, the aluminum concentration in the electron blocking layer is changed, the diffusion of P-type doping, mainly the diffusion of magnesium, is limited by the change of the aluminum concentration, the electron blocking layer comprises a P-type doping layer at one side close to the second semiconductor layer, and the P-type doping concentration of the P-type doping layer is not less than 1E19cm -3 The P-type doping concentration of the side, close to the second semiconductor layer, of the electron blocking layer is higher than that of the side, far away from the second semiconductor layer, of the electron blocking layer, and therefore sufficient holes are provided through P-type doping. Through calculation, in the photon confinement region, the magnesium high-doping concentration of the electron blocking layer is a main source of photon absorption, and the P-type high-doping concentration region is arranged far away from the second waveguide layer, so that the optical absorption of the second waveguide layer is reduced, and the light extraction efficiency is improved.
According to the invention, preferably, the optical waveguide further comprises a high-aluminum barrier layer, the high-aluminum barrier layer is arranged between the second waveguide layer and the electron barrier layer, the aluminum component of the high-aluminum barrier layer is more than 2 times of that of the electron barrier layer, or the high-aluminum barrier layer is arranged on one side of the electron barrier layer close to the second waveguide layer, the aluminum component of the high-aluminum barrier layer is more than 2 times of that of other areas of the electron barrier layer, and the increased aluminum component is further utilized to limit the P-type doping from diffusing from the electron barrier layer to the second waveguide layer. Preferably, the high aluminum barrier layer is free of a P-type doped layer.
According to the present invention, it is preferable that the high aluminum barrier layer contains In as a component In consideration of the effect of hole injection and the avoidance of the restriction of hole movement by high aluminum, particularly the restriction of hole movement to the active layer y Al x Ga (1-x-y) N, wherein x is 0.5 to 1, y is 0 to 0.2, the thickness of the high aluminum barrier layer is not more than 0.003 mu m, and the internal quantum efficiency of the product is improved by utilizing an instantaneous doping process.
According to the present invention, it is preferable that the thickness of the P-type doped layer in the electron blocking layer is 0.001 μm to 0.01 μm, enhancing the diffusion suppressing effect.
According to the present invention, it is preferable that the electron blocking layer has a first P-type doping concentration peak therein, the electron blocking layer has an aluminum concentration peak, the peak of the first P-type doping concentration peak is located on a side of the aluminum concentration peak of the electron blocking layer close to the second semiconductor layer, diffusion of P-type impurities is prevented by delayed doping with respect to the aluminum peak, and the peak doping concentration of the first P-type doping concentration peak is not lower than the P-type doping concentration of other regions in the electron blocking layer.
According to the invention, it is preferred that the electron blocking layer has a second P-type doping concentration peak therein, the second P-type doping concentration peak being located between the first P-type doping concentration peak and the second waveguide layer. The second P-type dopant concentration peak is affected by the location of the aluminum concentration peak, and the second P-type dopant concentration peak is less than 50 angstroms from the aluminum concentration peak.
According to the present invention, it is preferable that the electron blocking layer has a second P-type doping concentration peak, the peak of the second P-type doping concentration peak is located on a side of the peak of the aluminum peak of the electron blocking layer close to the second waveguide layer, and the second P-type doping concentration peak plays a role of buffering the P-type doping diffusion, so as to further prevent the P-type doping from diffusing into the second waveguide layer.
According to the present invention, it is preferable that the distance from the second waveguide layer at the peak of the first P-type doping concentration peak is 0.005 μm to 0.02 μm, the upper limit is to increase hole injection efficiency, and the lower limit is to prevent Mg from diffusing into the second waveguide layer. The distance between the peak of the first P-type doping concentration peak and the surface of the electron blocking layer close to one side of the second semiconductor layer is 0-0.01 μm.
According to the present invention, it is preferable that the peak of the first P type doping concentration peak is higher than the peak of the second P type doping concentration peak, and the peak concentration of the second P type doping concentration peak is not less than 1E19cm -3 . The doping is utilized to improve the hole injection efficiency to the maximum extent, and the deceleration or buffering of the doping diffusion is considered.
According to the present invention, it is preferable that the surface P-type doping concentration of the electron blocking layer on the side close to the second waveguide layer is not less than1E19cm -3 The diffusion of the P-type doping is slowed down or buffered by the high concentration P-type doping.
According to the invention, the second waveguide layer preferably has a P-type doping concentration of not more than 1E19cm -3 。
According to the present invention, it is preferable that the electron blocking layer has a valley of P-type doping concentration, the P-type doping concentration of the valley is 70% or less of the maximum value of the P-type doping concentration in the electron blocking layer, and the P-type doping concentration of the valley is 7E18cm -3 The actual doping settings may be in 5E18cm -3 The P-type dopant diffusion is limited by the valley.
The invention also provides a display device which comprises a display light source, wherein the display light source adopts the semiconductor laser.
The beneficial effects of the invention at least comprise: the P-type doped high-concentration region is far away from the second waveguide layer, the optical absorption of the second waveguide layer is reduced, and the P-type doping concentration of the second waveguide layer is controlled to be not more than 1E19cm -3 . The local doping technology is utilized to control the Mg doping position at the tail end of the electron blocking layer, so that the same hole injection efficiency can be obtained, and the P-type doping diffusion to the active layer can be slowed down.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a schematic cross-sectional view of a laser diode according to embodiment 1 of the present application;
FIG. 2 is composition test data of a laser diode according to example 1 of the present application;
fig. 3 is a schematic cross-sectional view of a laser diode according to embodiment 2 of the present application;
FIG. 4 shows compositional test data for a laser diode according to example 2 of the present application;
fig. 5 is a cross-sectional photograph of a laser diode according to embodiment 2 of the present application;
FIG. 6 shows compositional test data for a laser diode according to example 3 of the present application;
fig. 7 is a light effect improvement diagram according to embodiment 3 of the present application.
Illustration of the drawings: 100. a substrate; 210. a first semiconductor layer; 220. a second semiconductor layer; 300. an active layer; 310. a well layer; 320. a base layer; 410. a first waveguide layer; 420. a second waveguide layer; 500. an electron blocking layer; 510. a P-type doped layer; 520. a high aluminum barrier layer.
Detailed Description
The following embodiments are provided to illustrate the present disclosure by way of specific examples, and other advantages and effects of the present disclosure will be apparent to those skilled in the art from the disclosure herein. The present application is capable of other and different embodiments, and its several details are capable of modifications and various changes in form and details can be made without departing from the spirit and scope of the present application.
The composition of each layer encompassed by the present application can be analyzed in any suitable manner, such as Secondary Ion Mass Spectrometry (SIMS); the thickness of each layer may be analyzed by any suitable means, such as Transmission Electron Microscopy (TEM) or Scanning Electron Microscopy (SEM), to match the depth position of each layer, for example, on a SIMS map.
Referring to fig. 1, in a first embodiment of the present invention, a gan-based laser, a laser diode, is provided, which includes a substrate 100, the substrate 100 is made of a material including but not limited to gan, a first semiconductor layer 210 including N-type, a second semiconductor layer 220 including P-type, and an active layer 300 disposed therebetween are formed on the substrate 100; the manufacturing method can comprise chemical vapor deposition; the active layer 300 is composed of a plurality of pairs of periodically stacked well layers 310 and barrier layers 320; as an example, the well layer 310 includes indium gallium nitride, the barrier layer 320 includes gallium nitride, the first waveguide layer 410 is included between the first semiconductor layer 210 and the active layer 300, and the second waveguide layer 420 is included between the second semiconductor layer 220 and the active layer 300; in the present invention, it mainly relates to a laser having an excitation wavelength in a range of 430nm to 550 nm.
An electron blocking layer 500 is arranged between the second waveguide layer 420 and the second semiconductor layer 220, the electron blocking layer 500 comprises AlGaN, the electron blocking layer 500 limits electrons from moving from the active layer 300 to the second semiconductor layer 220, the electron concentration in the active layer 300 is increased, so that the electrons are captured in the active layer 300, the recombination efficiency is improved, the aluminum concentration in the electron blocking layer 500 is changed, and the concentration distribution of the P-type doping is controlled by the changed aluminum concentration.
Specifically, the first waveguide layer 410 includes Al x1 In y1 Ga 1-x1-y1 The value range of N, x1 is 0-0.1, and the value range of y1 is 0-0.2. The concentration of aluminum in the first waveguide layer 410 is preferably 3 × 10 16 ~5×10 17 cm -3 The concentration of indium is preferably 2X 10 20 ~4×10 20 cm -3 The refractive index of the first waveguide layer 410 is preferably 2.4 to 2.6. The lattice constant of the first waveguide layer 410 can be effectively reduced by doping a trace amount of aluminum component in the first waveguide layer 410 to match the first semiconductor layer 210. The second waveguide layer 420 comprises AlInGaN or InGaN, including Al x2 In y2 Ga 1-x2-y2 The value range of N, x2 is 0-0.1, and the value range of y2 is 0-0.2. The concentration of aluminum in second waveguide layer 420 is preferably 3 × 10 16 ~5×10 17 cm -3 The concentration of indium is preferably 2X 10 20 ~4×10 20 cm -3 . First waveguide layer 410 and second waveguide layer 420 act as photon confinement capability.
Referring in combination to fig. 2, the electron blocking layer 500 includes a P-type doped layer 510 on a side near the second semiconductor layer 220, the P-type doped layer 510 having a composition greater than 1E19cm -3 The P-type doped layer 510 may be disposed on an end surface of the electron blocking layer 500 or inside the electron blocking layer 500, and a P-type doping concentration of a side of the electron blocking layer 500 close to the second semiconductor layer 220 is higher than a P-type doping concentration of a side of the electron blocking layer 500 far from the second semiconductor layer 220. In the present invention, the electron blocking layer 500 to the second semiconductor layer 220 are all doped P-type. In the present embodiment, the P-type doped layer 510 is dopedThe impurity concentration is not lower than the second semiconductor layer 220 and other regions of the electron blocking layer 500. The distance between the P-type doped layer 510 and the well layer 310 closest to the second semiconductor layer 220 in the active layer 300 is 0.2 μm to 0.3 μm, and compared with the conventional design, the P-type doped high-concentration region is increased to be far away from the well layer 310, and the aging life of the product is prolonged.
The P-type doped layer 510 is located at an end portion of the electron blocking layer 500 near the second semiconductor layer 220. In the present embodiment, the doping component in the P-type doping layer 510 is Mg doping. The thickness of the P-type doped layer in the electron blocking layer 500 is 0.001 μm to 0.01 μm. The electron blocking layer 500 has a total thickness of 0.003 to 0.05 μm.
In this embodiment, the P-type doping concentration of the surface of the electron blocking layer 500 near the second waveguide layer 420 is not more than 1E19cm by process control -3 . Meanwhile, the P-type doping concentration of the second waveguide layer 420 is not more than 1E19cm -3 The problem of light absorption aggravation caused by high P-type doping concentration of the second waveguide layer 420 is avoided, and the photoelectric conversion efficiency is reduced.
Referring to fig. 3, in a second embodiment of the present invention, a laser diode is provided, which is different from the first embodiment in that an aluminum-rich barrier layer 520 is further included in the epitaxial stack, in this embodiment, the aluminum-rich barrier layer 520 is doped non-P-type, the aluminum-rich barrier layer 520 is disposed between the second waveguide layer 420 and the electron-blocking layer 500, and the aluminum composition of the aluminum-rich barrier layer 520 is more than 2 times that of the electron-blocking layer 500. Or the high aluminum barrier layer 520 is arranged on one side of the electron barrier layer 500 close to the second waveguide layer 420, the aluminum component of the high aluminum barrier layer 520 is more than 2 times of that of the other area of the electron barrier layer 500, and the high aluminum barrier layer 520 is arranged in the electron barrier layer 500 by controlling the distribution of the aluminum component. Including not only an overlapped state in contact with each other but also a state overlapped with another layer interposed therebetween. Preferably, the high aluminum barrier layer 520 is provided with an unintentional P-type doping, since the high aluminum barrier layer 520 is closer to the second waveguide layer 420 than to other regions of the electron barrier layer 500. The aluminum composition distribution of the high aluminum barrier layer is not continuous but is achieved with a small range of aluminum composition enhancement, so it is difficult to distinguish significantly from the aluminum composition of the electron barrier layer 500 on SIMS, but a high bright layer can appear on the TEM appearance.
The high aluminum barrier layer 520 of the present invention comprises In y Al x Ga (1-x-y) N, wherein x is 0.5 to 1, y is 0 to 0.2, the thickness of the high aluminum barrier layer 520 is not more than 0.003 mu m, and the distribution of aluminum components is strictly controlled, so that the efficiency of injecting holes into the active layer 300 by the P-side second semiconductor 220 is improved.
Referring to fig. 4, the formation of a first P-type doping concentration peak (Mg doping peak 1) in the electron blocking layer 500 is further promoted by providing the high aluminum blocking layer 520, the electron blocking layer 500 has an aluminum concentration peak, a peak of the first P-type doping concentration peak is located at a side of the aluminum concentration peak of the electron blocking layer 500 close to the second semiconductor layer 220, and a peak doping concentration of the first P-type doping concentration peak is not lower than P-type doping concentrations of other regions in the electron blocking layer 500.
Referring to fig. 5, it can be seen from the inspection by transmission electron microscopy that a part of the structure of the semiconductor layer sequence, from bottom to top, mainly relates to the second waveguide layer 420, the high-aluminum barrier layer 520, the electron barrier layer 500 and the second semiconductor layer 220, the high-aluminum barrier layer 520 has a higher brightness than the rest of the electron barrier layer 520, and the high-aluminum barrier layer 520 is located on the side of the electron barrier layer 500 close to the second waveguide layer 420. In some embodiments, the electron blocking layer 500 is controlled to have a thickness of 94 angstroms, and the high aluminum blocking layer 520 is brighter white than the rest of the electron blocking layer 500.
Referring to fig. 6, in the third embodiment of the present invention, a second P-type doping concentration peak is disposed in the electron blocking layer 500, and the second P-type doping concentration peak is located between the first P-type doping concentration peak and the second waveguide layer 420. The electron blocking layer 500 has a second P-type doping concentration peak (Mg doping peak 2) therein, and the peak of the second P-type doping concentration peak is located on the side of the peak of the aluminum peak of the electron blocking layer 500 near the second waveguide layer 420.
The distance between the peak of the first P-type doping concentration peak and the second waveguide layer 420 is not less than 0.005 μm, and the distance between the peak of the first P-type doping concentration peak and the surface of the electron blocking layer 500 close to the second semiconductor layer 220 is 0 μm to 0.01 μm.
The peak value of the first P-type doping concentration peak is higher than the peak value of the second P-type doping concentration peak, and the peak concentration of the second P-type doping concentration peak is not less than 1E19cm -3 . The design of the peak position of the second P-type doping concentration is controlled by technically controlling the first P-type doping concentration and the high-aluminum barrier layer.
In some embodiments of the present invention, the electron blocking layer 500 has a P-type doping concentration valley 530, and the P-type doping concentration of the valley is less than 70% of the highest P-type doping concentration of the electron blocking layer 500. The P-type doping concentration of the valleys is below 7E18, the actual doping setting can be below 5E18, the P-type doping diffusion is limited by the valleys, but only one distinct valley region can be observed in SIMS detection due to the diffusion that exists in the P-type doping concentration.
Referring to fig. 7, in this embodiment, the absorption of the P-type dopant in the second waveguide layer 420 can be greatly reduced after the implementation, the slope after lasing can be further increased, and the brightness can be improved, for example, the brightness of the product can be improved by 20% at a current of 1.5 amperes.
In a fourth embodiment of the present aspect, there is provided a display device including a display light source, the display light source being any one of the semiconductor lasers in the above-described embodiments.
The foregoing is only a preferred embodiment of the present application, and it should be noted that, for those skilled in the art, several modifications and substitutions can be made without departing from the technical principle of the present application, and these modifications and substitutions should also be regarded as the protection scope of the present application.

Claims (20)

1. A semiconductor laser comprises an N-type first semiconductor layer, a P-type second semiconductor layer and an active layer positioned between the N-type first semiconductor layer and the P-type second semiconductor layer and used for exciting light; a first waveguide layer is arranged between the first semiconductor layer and the active layer, and a second waveguide layer is arranged between the second semiconductor layer and the active layer;
an electron blocking layer is arranged between the second waveguide layer and the second semiconductor layer, the electron blocking layer comprises AlGaN and/or AlGaInN,
the high-aluminum waveguide composite material is characterized by further comprising a high-aluminum barrier layer arranged between the second waveguide layer and the electron barrier layer, wherein the aluminum component of the high-aluminum barrier layer is more than 2 times of that of the electron barrier layer, or the high-aluminum barrier layer is arranged on one side of the electron barrier layer close to the second waveguide layer, and the aluminum component of the high-aluminum barrier layer is more than 2 times of that of other areas of the electron barrier layer.
2. A semiconductor laser as claimed in claim 1 further comprising a P-type doped layer at an end of the electron blocking layer adjacent the second semiconductor layer.
3. A semiconductor laser as claimed in claim 1 wherein the doping component in the P-type doped layer is Mg doped.
4. A semiconductor laser as claimed In claim 1 wherein the composition of the high aluminum barrier layer comprises In y Al x Ga (1-x-y) N, wherein x is 0.5 to 1, y is 0 to 0.2, and the thickness of the high aluminum barrier layer is not more than 0.003 mu m.
5. A semiconductor laser as claimed in claim 1 wherein the thickness of the P-doped layer in the electron blocking layer is from 0.001 μm to 0.01 μm.
6. A semiconductor laser as claimed in claim 1 wherein the electron blocking layer has a first P-type dopant concentration peak therein, the electron blocking layer has an aluminum concentration peak, the peak of the first P-type dopant concentration peak is located on a side of the electron blocking layer where the peak of the aluminum concentration peak is located near the second semiconductor layer, and the peak dopant concentration of the first P-type dopant concentration peak is not lower than the P-type dopant concentration of other regions in the electron blocking layer.
7. A semiconductor laser as defined in claim 6 wherein the electron blocking layer has a second P-type dopant peak therein, the peak of the second P-type dopant peak being located between the first P-type dopant peak and the second waveguide layer.
8. A semiconductor laser as defined in claim 6 wherein the electron blocking layer has a second P-type dopant peak therein, the peak of the second P-type dopant peak being located on a side of the peak of the aluminum peak of the electron blocking layer adjacent the second waveguide layer.
9. A semiconductor laser as claimed in claim 6 wherein the peak of the first peak of the P-type doping concentration is spaced from the second waveguide layer by a distance of 0.005 μm to 0.02 μm, and the peak of the first peak of the P-type doping concentration is spaced from the surface of the electron blocking layer adjacent to the second semiconductor layer by a distance of 0 μm to 0.01 μm.
10. A semiconductor laser as claimed in claim 8 wherein the peak of the first P-type doping concentration peak is higher than the peak of the second P-type doping concentration peak, and the peak concentration of the second P-type doping concentration peak is not less than 1E19cm -3 。
11. A semiconductor laser as defined in claim 7 wherein the second P-type dopant concentration peak is less than 50 angstroms from the aluminum concentration peak.
12. A semiconductor laser as defined in claim 1, wherein the electron blocking layer has a surface P-type doping concentration no less than 1E19cm on a side adjacent to the second waveguide layer -3 。
13. A semiconductor laser as claimed in claim 1 wherein the second waveguide layer comprises alingan or ingagan and the P-type doping concentration of the second waveguide layer is no greater than 1E19cm -3 。
14. A semiconductor laser as claimed in claim 1 wherein the P-type isThe p-type doping concentration of the doped layer is not less than 1E19cm -3 。
15. A semiconductor laser as claimed in claim 1 wherein the electron blocking layer has a total thickness of 0.003 to 0.05 μm.
16. A semiconductor laser as claimed in claim 1 wherein the laser is gallium nitride based and emits light at a wavelength of 430nm to 550 nm.
17. A semiconductor laser as claimed in claim 1 wherein the high aluminum barrier layer is unintentionally P-doped.
18. A semiconductor laser as claimed in claim 1 wherein the active layer is formed by periodically stacking a plurality of well layers and barrier layers, and the P-type doped layer is spaced from 0.2 μm to 0.3 μm from the well layer of the active layer on the side closest to the second semiconductor layer.
19. A semiconductor laser as claimed in claim 1 wherein the electron blocking layer has valleys with a P-type doping concentration which is less than 70% of the highest P-type doping concentration in the electron blocking layer.
20. A display device comprising a display light source, the display light source being the semiconductor laser of any one of claims 1 to 19.
CN202210450686.9A 2022-04-27 2022-04-27 Semiconductor laser and display device thereof Pending CN114976875A (en)

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CN202210450686.9A CN114976875A (en) 2022-04-27 2022-04-27 Semiconductor laser and display device thereof

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CN114976875A true CN114976875A (en) 2022-08-30

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