CN114975516A

CN114975516A - Contact structure and electronic device with same

Info

Publication number: CN114975516A
Application number: CN202110193271.3A
Authority: CN
Inventors: 王喜照; 江一敏; 母利伟; 吴珊瑀; 郭昭辉; 赵灿亮; 连虹艳; 刘俊伟
Original assignee: TPK Advanced Solutions Inc
Current assignee: TPK Advanced Solutions Inc
Priority date: 2021-02-20
Filing date: 2021-02-20
Publication date: 2022-08-30

Abstract

The invention provides a contact structure and an electronic device with the same, wherein the contact structure comprises: a substrate, a copper layer, a nanowire dispersion promoting layer, and a nanowire layer. The copper layer is disposed over the substrate. The nanowire dispersion promoting layer is disposed over the copper layer. The nanowire layer is disposed on the nanowire dispersion promoting layer. The nanowire dispersion promoting layer is arranged on the copper layer, so that the uniform dispersion degree of the nanosilver on the copper layer is improved in the stacking structure of the copper layer and the nanosilver layer, and the phenomenon that the aggregated nanosilver is not completely etched in the subsequent etching process is prevented. By uniformly dispersing the nano silver material layer on the copper layer, the etching process can manufacture elements or products with thinner line width and line distance.

Description

Contact structure and electronic device with same

Technical Field

The present invention relates to a contact structure and an electronic device having the same, and more particularly, to a contact structure having a copper layer and a nano-silver wire layer stacked thereon and an electronic device having the same.

Background

In the prior art, in some electronic devices (e.g., touch panels), at a contact area where a touch electrode meets a transmission line, the transmission line is mostly made of a copper material layer, and the touch electrode uses a nano-silver material layer. However, the nano-silver has the problems of poor aggregation and dispersion at the junction, which causes the problem of incomplete etching in the etching process of the contact region, and the distance between the lines cannot be reduced due to the influence of the incomplete etching of the lines, so that the requirement of narrow-frame products cannot be met.

FIG. 1A shows a schematic representation of a prior art apparatus 10 comprising contact regions 20 prior to treatment with a stripping solution in a yellow light process. The apparatus 10 comprises: a substrate 12, a copper layer 14 over the substrate 12, and a layer of nanosilver 16 over the substrate 12 and partially covering the copper layer 14. Fig. 1B is a schematic diagram of the apparatus of fig. 1A after the stripping solution treatment in the yellow light process, wherein the aggregation of nano-silver is likely to occur between the copper layer 14' of the contact region 20 and the nano-silver wire layer 16 (as shown in fig. 1C).

Since the nano-silver aggregation between the copper layer 14' and the nano-silver wire layer 16 affects the line width and line distance of the product, for example, the product with the line width less than 50nm is prone to etching residue, thereby causing an electrical abnormality (such as short circuit). In view of the above, there is a need for an improved contact structure between the existing silver nanowire layer and the copper layer.

Disclosure of Invention

An object of one embodiment of the present invention is to provide a contact structure, in which a nanowire dispersion promoting layer is disposed on a copper layer, so that a uniform dispersion degree of nanosilver on the copper layer is improved in a stacked structure of the copper layer and a nanosilver layer, thereby preventing the collected nanosilver from being incompletely etched in a subsequent etching process.

An object of an embodiment of the present invention is to provide a nanowire dispersion promoting layer, which can uniformly disperse a layer of silver nanoparticles on a copper layer, so that a device/product with a fine line width and line pitch (e.g., a line width less than 10nm) can be manufactured by an etching process.

Some embodiments of the invention provide a contact structure comprising: a substrate, a copper layer, a nanowire dispersion promoting layer, and a nanowire layer. The copper layer is disposed over the substrate. A nanowire dispersion promoting layer is disposed over the copper layer, wherein the nanowire dispersion promoting layer forms a monomolecular adsorption layer on a surface of the copper layer. The nanowire layer is disposed on the nanowire dispersion promoting layer. Between the copper layer and the layer of nanosilver, the number of particles having a diameter of more than 40 μm is 5 or less.

In some embodiments, the nanowire dispersion promoting layer is an organic layer formed by curing a composite formulated organic coating comprising: 0.05 wt% to 2.5 wt% of base fluid, 1.5 wt% to 10 wt% of additive and 80 wt% to 99.8 wt% of solvent.

In some embodiments, the base fluid is a first coupling agent, the additive is a second coupling agent, a chelating agent, a Polyurethane (PU) based resin, or a combination thereof, the first coupling agent is different from the second coupling agent.

In some embodiments, the first coupling agent is an epoxy-based silane coupling agent and the second coupling agent is an amine-based silane coupling agent.

In some embodiments, the base fluid is an epoxy silane coupling agent, the additive is a chelating agent, and the volume ratio of the epoxy silane coupling agent to the chelating agent is 3: 1.

In some embodiments, the nanowire dispersion promotion layer has a thickness of about 50 to about 100 nanometers.

In some embodiments, the base fluid is an epoxy silane coupling agent, the additive is an amino silane coupling agent, and the volume ratio of the epoxy silane coupling agent to the amino silane coupling agent is 1: 4.

Some embodiments of the present invention provide an electronic device comprising a contact structure formed of a copper layer and a layer of nanosilver layers.

In some embodiments, the contact structure of the electronic device is located in a peripheral region of the electronic device.

Drawings

Various aspects of the invention will be best understood when the following detailed description is read with reference to the accompanying drawings. It should be noted that the various features may not be drawn to scale in accordance with industry standard practice. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1A shows a schematic view of a prior art electronic device comprising a contact structure prior to treatment with a stripping solution of a yellow light process.

FIG. 1B shows a schematic view of a prior art electronic device comprising contact structures after treatment with a stripping solution of a yellow light process.

Fig. 1C is a photograph showing an aggregation phenomenon of the existing silver nanowires.

Fig. 2A shows a schematic cross-sectional view of a contact structure according to some embodiments of the invention.

Fig. 2B shows a schematic cross-sectional view of a contact structure according to some embodiments of the present invention.

Fig. 3 shows a schematic cross-sectional view of an electronic device according to some embodiments of the invention.

FIG. 4 shows a top view of a touch panel according to some embodiments of the invention.

FIG. 5A shows a schematic top view of a touch panel according to some embodiments of the invention.

Fig. 5B is a schematic cross-sectional view taken along line a-a of fig. 5A.

Fig. 5C is a schematic cross-sectional view taken along line B-B of fig. 5A.

Fig. 6A to 6C show schematic cross-sectional views of different steps of a method of manufacturing a contact structure according to an embodiment of the invention.

Wherein the reference numbers are as follows:

10 component

12: substrate

14 copper layer

14' copper layer

16: layer of silver nanowires

20 contact area

100 contact structure

102 substrate

104 copper layer

106 nanowire Dispersion promoting layer

108 layer of nanosilver

200 component

210 contact structure

212 substrate

214 copper layer

214' copper layer

216 nanowire Dispersion promoting layer

218 layer of nano-silver

300 touch panel

310 display area

312 touch-sensitive electrode

320 peripheral area

321 signal transmission line

322: lap zone

500 touch Panel

510 base plate

520 peripheral lead

536 non-conductive area

550 nanowire Dispersion promoting layer

602 substrate

604 copper layer

606 nanowire Dispersion promoting layer

608 nanometer silver layer

Bonding area of BA

C1 first cover

C2 second covering

D1 first direction

D2 second direction

PA peripheral area

TE touch induction electrode

And VA is a display area.

Detailed Description

The following disclosure provides different implementations or embodiments to achieve different features of the provided objects. Specific embodiments of components and configurations are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to limit the invention. For example, in the description that follows, forming a first feature over a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be disposed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present invention may repeat reference numerals and/or letters in the various examples. Such repetition does not imply a relationship between the various embodiments and/or configurations discussed.

Furthermore, to facilitate description of the relationship between one element or feature and another element or feature, as illustrated in the figures, spatially relative terms, such as "below," "lower," "above," "upper," "higher," and the like, may be used herein. Spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The device may have other orientations (rotated 90 degrees or at other orientations) and the spatially relative terms used herein should be interpreted accordingly.

Referring to fig. 2A, a contact structure 100 is shown, according to some embodiments of the present invention. The contact structure includes a substrate 102, a copper layer 104, a nanowire dispersion promoting layer 106, and a layer of nanosilver 108. A copper layer 104 is disposed on the substrate 102, a nanowire dispersion promoting layer 106 is disposed on the copper layer 104, and a nanowire layer 108 is disposed on the nanowire dispersion promoting layer 106. In other words, the nanowire dispersion promoting layer 106 is disposed between the copper layer 104 and the nanowire layer 108, which does not affect the electrical connection between the copper layer 104 and the nanowire layer 108, and the nanosilver material has a better dispersion characteristic on the copper layer 104, so as to solve the risk of the non-uniformly dispersed nanosilver in the subsequent process. For example, the uniformly dispersed nano silver wires can be well etched in the subsequent etching process, so as to achieve excellent etching uniformity, and the method is particularly suitable for the etching process of narrow frames.

In other embodiments, as shown in fig. 2B, the layer of nanosilver layer 108 is partially overlaid over the copper layer 104. In other words, a portion of the copper layer 104 indirectly contacts the nanosilver layer 108 via the nanowire dispersion facilitation layer 106, and the remainder of the copper layer 104 is free of an overlying nanosilver layer.

In some embodiments of the present invention, the nanowire dispersion promoting layer 106 in the contact structure is a very thin organic layer formed by curing a composite formulated organic coating comprising: component A is base liquid (0.05 wt% to 2.5 wt%); component B is additive (1.5 wt% to 10 wt%); and component C, a solvent (80 wt% to 99.8 wt%). Wherein the base fluid is a first coupling agent, such as an epoxy silane coupling agent; the additive is a second coupling agent, an organic ligand (e.g., a chelating agent), an organic resin, or a combination thereof, wherein the second coupling agent can be an aminosilane coupling agent. The solvent may be water or alcohols.

In some embodiments, the nanowire dispersion promoting layer 106 may form a sub-adsorption layer on the surface of the metal to modify the surface of the metal layer (e.g., copper layer), thereby improving the dispersion effect of the silver nanowires on the surface.

In some embodiments, the nanowire dispersion promoting layer 106 has a thickness of about 50 to about 100 nanometers, such as 50, 60, 70, 80, 90, or 100 nanometers.

In some embodiments, the contact structure of the present invention can be widely applied to the place where the copper layer is in laminated contact with the nano-silver layer. For example, referring to FIG. 3, an element 200 according to further embodiments of the present invention is shown. The device 200 comprises a contact structure 210. The contact structure 210 includes a substrate 212, a copper layer 214 (where the copper layer in indirect contact with the layer of nanosilver is denoted as 214), a nanowire dispersion promoting layer 216, and a layer of nanosilver 218. The contact structure 210 may be a portion of the touch panel where the touch electrode meets or overlaps a signal transmission line, the nano-silver layer 218 is a touch electrode, the copper layer 214 is a signal transmission line, and the contact structure 210 enables a signal of the touch electrode to be transmitted to the signal transmission line. Specifically, the contact structure 210 may be located in a peripheral region of the touch panel, or adjacent to a boundary region between the peripheral region and a visible region. The nanowire dispersion promoting layer 216 is located between the copper layer 214 "and the nanowire layer 218, does not affect the electrical connection between the copper layer 214" and the nanowire layer 218, and the nanowire dispersion promoting layer 216 enables the nanowire to be uniformly dispersed on the copper layer 214, thereby improving the etching uniformity of the etching solution for the nanowire in the manufacturing process. That is, under the condition of smaller pitch, the nano-silver wires still do not remain between the adjacent electrodes (such as the adjacent peripheral wires 220), thereby reducing the width of the peripheral region.

In addition, the upper surface and/or the side surfaces of some of the copper layers 214 are also covered with the nanowire dispersion promoting layer 216, as shown in fig. 3.

The contact structure provided by the embodiments of the present invention can be applied to a display device, for example, an electronic device having a panel, such as a mobile phone, a tablet, a wearable electronic device (e.g., a smart band, a smart watch, a virtual reality device, etc.), a television, a display, a notebook computer, an electronic book, a digital photo frame, a navigator, or the like. The component 10/200 and the touch panel 300 (shown in fig. 4) according to the embodiment of the present invention can be assembled with other electronic components to form a device/product, such as a display with touch function, for example, the component 10/200 and the touch panel 300 can be attached to a display component (not shown), such as a liquid crystal display component or an Organic Light Emitting Diode (OLED) display component, and optical glue or other similar adhesives can be attached between the two components; or an optical film such as a polarizing plate (a stretching type polarizing plate or a liquid crystal coating type polarizer), an optical retardation film, or the like. The element 10/200, the touch panel 300 and the like in the embodiment of the present invention can be applied to electronic devices such as a portable phone, a tablet computer, a notebook computer and the like, and can also be applied to flexible products. The element 10/200 and the touch panel 300 of the embodiment of the invention can also be applied to wearable devices (such as watches, glasses, smart clothes, smart shoes, etc.), and automotive devices (such as instrument panels, driving recorders, rearview mirrors for vehicles, windows, etc.).

Please refer to fig. 4, which illustrates a top view of a touch panel 300 in a display device. The touch panel 300 includes a display region 310 and a peripheral region 320. In the display region 310, the touch sensing electrode 312 is formed of a conductive material containing nano silver. In the peripheral region 320, the signal transmission lines 321 (or peripheral leads) are formed of copper layers. The peripheral region 320 includes a plurality of bonding regions 322 where the touch sensing electrodes are electrically connected to the signal transmission lines for signal transmission. Landing zone 322 may include contact structure 210 as shown in fig. 3.

In some embodiments, in the lap zone 322, the layer of nano-silver wires covers one side surface and a part or all of the upper surface of the copper layer of the signal transmission line, wherein the nano-wire dispersion promoting layer is between the copper layer and the layer of nano-silver wires.

In some embodiments, a copper layer is formed on the peripheral region 320 on the substrate of the touch panel 300, followed by disposing a nanowire dispersion promoting layer over the copper layer. Thereafter, a layer of nano-silver lines is formed on the display area 310 and the peripheral area 320 on the substrate, and a layer of nano-silver lines is also formed over the copper layer and the nano-wire dispersion promoting layer in the peripheral area 320. And then, carrying out patterning processes, including photoresist layer coating, exposure, development, etching and the like. Accordingly, a touch sensing electrode pattern is formed in the display region 310, and a plurality of spaced signal transmission lines 321 are formed in the peripheral region 320. In the lap zone treated with etching, the layer of nanosilver wires is above the layer of copper and the layer of nanowire dispersion promoting layer is between the layer of copper and the layer of nanosilver wires. In some embodiments, the layer of nanosilver, the layer of nanowire dispersion promoting layer and the layer of copper have sides (i.e., common etched faces) that are aligned with one another in the peripheral region 320. Then, the spaces between the electrode patterns and between the signal transmission lines are filled with an insulating material.

In an alternative embodiment, the silver nanowire layer is not formed only in the lap joint region, but extends to the entire peripheral region 320, so as to be simultaneously etched (one time etch) with the copper layer at one time; or the process of etching the nano silver wire layer and the nano wire dispersion promoting layer first and then etching the copper layer may be performed. Accordingly, the signal transmission line in the peripheral region 320 is a composite structure of a nano silver line layer/a nano wire dispersion promoting layer/a copper layer. Specifically, reference may be made to fig. 5A to 5C in conjunction with the description of the disclosure below.

Fig. 5A is a schematic top view of a touch panel 500 according to a part of the embodiment of the invention, and fig. 5B and 5C are cross-sectional views of a-a line and a B-B line of fig. 5A, respectively. The touch panel 500 includes a substrate 510, a peripheral lead 520, a mark 540, a first cover C1, a second cover C2, a nanowire dispersion promoting layer 550 (see fig. 5B and 5C), and a touch sensing electrode TE. The number of the peripheral wires 520, the marks 540, the first cover C1, the second cover C2, and the touch sensing electrodes TE may be one or more, and the numbers drawn in the following embodiments and the drawings are only for illustrative purposes and do not limit the present invention.

Referring to fig. 5A, the substrate 510 has a display area VA and a peripheral area PA. The peripheral area PA is disposed at a side of the display area VA, for example, the peripheral area PA may be a frame-shaped area disposed at the periphery (i.e. covering the right side, the left side, the upper side and the lower side) of the display area VA, but in other embodiments, the peripheral area PA may be an L-shaped area disposed at the left side and the lower side of the display area VA. As shown in fig. 5A, the embodiment has eight sets of peripheral wires 520 and a first cover C1 corresponding to the peripheral wires 520, which is disposed on the peripheral area PA of the substrate 510; the touch sensing electrode TE is disposed in the display area VA of the substrate 510. The embodiment further includes two sets of marks 540 and a second cover C2 corresponding to the marks 540, which are disposed in the peripheral area PA of the substrate 510. A nanowire dispersion promoting layer 550 is disposed between the first cover C1 and the peripheral wire 520 to prevent the aggregation of the aforementioned silver nanowires on the surface of the peripheral wire 520. A nanowire dispersion promoting layer 550 is also disposed between the second cover C2 and the marker 540; in addition, the first cover C1 and the second cover C2 are respectively disposed on the peripheral lead 520 and the mark 540, so that the upper and lower layers of material are formed at predetermined positions without being aligned, thereby reducing or avoiding the requirement of providing an alignment error area in the manufacturing process, further reducing the width of the peripheral area PA, and further achieving the narrow frame requirement of the display.

The touch sensing electrode TE of the present embodiment is disposed in the display area VA, and the touch sensing electrode TE can be electrically connected to the peripheral lead 520. Specifically, the touch sensing electrode TE may also be a metal nanowire (metal nanowire) layer at least including metal nanowires, that is, the metal nanowires form the touch sensing electrode TE in the display area VA, and form the first cover C1 in the peripheral area PA, and the thickness/property of the monolayer formed by the nanowire dispersion promoting layer 550 does not affect the electrical conduction between the metal layer and the metal nanowire layer, so that the touch sensing electrode TE can be electrically connected through the contact between the first cover C1, the nanowire dispersion promoting layer 550 and the peripheral lead 520, thereby performing signal transmission. The metal nanowires also form a second cover C2 on the peripheral region PA, which is disposed on the mark 540, and the mark 540 can be broadly interpreted as a pattern with non-electrical function, but not limited thereto. In some embodiments of the present invention, the peripheral lead 520 and the mark 540 may be made of the same metal layer (i.e., the same metal material); the touch sensing electrode TE, the first cover C1 and the second cover C2 can be fabricated by a same metal nanowire layer.

In the present embodiment, the mark 540 is a bonding area BA disposed in the peripheral area PA, which is a butt alignment mark, that is, a mark for aligning a flexible circuit board (not shown) with the touch panel 500 in a step of connecting (bonding) an external circuit board, such as a flexible circuit board (not shown), to the touch panel 500. However, the present invention is not limited to the placement or function of the mark 540, for example, the mark 540 may be any check mark, pattern or label required in the manufacturing process, and is within the protection scope of the present invention. The marker 540 may have any possible shape such as a circle, a quadrangle, a cross, an L shape, a T shape, etc., and the nanowire dispersion promotion layer 550 has substantially the same shape as the marker 540.

As shown in fig. 5B and 5C, in the peripheral region PA, a non-conductive region 536 is disposed between adjacent peripheral wires 520 to electrically isolate the adjacent peripheral wires 520 and avoid short circuit. In the present embodiment, the non-conductive region 536 is a gap to isolate adjacent peripheral wires 520. In the patterning step, the above-mentioned gap can be formed by etching, so that the sidewall of the peripheral lead 520, the sidewall of the nanowire dispersion promoting layer 550 and the sidewall of the first cap C1 are a common etching surface and aligned with each other, that is, the three are formed in the same etching step; similarly, the sidewalls of the marker 540, the nanowire dispersion promoting layer 550 and the second cap C2 are a common etched surface and aligned with each other. Furthermore, the peripheral wires 520, the nanowire dispersion promoting layer 550 and the first cover C1 have the same or similar patterns and sizes, such as a long straight pattern, and the like, and the same or similar widths.

As shown in fig. 5C, in the display area VA, a non-conductive area 536 is disposed between adjacent touch sensing electrodes TE to electrically block the adjacent touch sensing electrodes TE and thus avoid short circuit. In the present embodiment, the non-conductive region 536 is a gap to isolate the adjacent touch sensing electrodes TE; in one embodiment, the etching process described above can be used to form the gaps between adjacent touch-sensitive electrodes TE. In the embodiment, the touch sensing electrode TE and the first cover C1 can be fabricated by using the same metal nanowire layer (e.g., a silver nanowire layer), so that at the boundary between the display area VA and the peripheral area PA, the metal nanowire layer forms a climbing structure to form the first cover C1.

In one embodiment, the touch sensing electrode TE is formed in a double layer configuration, that is, the touch sensing electrode TE is disposed on both the upper and lower surfaces of the substrate, so that the peripheral lead 520, the first cover C1, and the nanowire dispersion promoting layer 550 are formed on both the upper and lower surfaces of the substrate.

Referring to fig. 6A-6C, flow charts of fabricating contact structures according to some embodiments of the present invention are shown.

In fig. 6A, a copper layer disposed on a substrate is provided.

In some embodiments, substrate 602 may be a rigid or flexible substrate. The substrate 602 may be transparent or opaque. Suitable rigid substrates include, for example, polycarbonate, acrylics, and the like. Suitable flexible substrates include, but are not limited to: polyesters (e.g., polyethylene terephthalate (PET), polynaphthalene, and polycarbonate), polyolefins (e.g., linear, branched, and cyclic polyolefins), polyethylenes (e.g., polyvinyl chloride, polyvinyl dichloride, polyvinyl acetal, polystyrene, polyacrylates, and the like), cellulose substrates (e.g., cellulose triacetate, cellulose acetate), polysulfones (e.g., polyethersulfone), polyimides, silicones, or other polymeric films.

A copper layer 604 is disposed over the substrate 602. The copper layer 604 may be disposed on the substrate 602 by electroplating, electroless plating, or other deposition.

In fig. 6B, a nanowire dispersion promoting layer is disposed on the copper layer. In some embodiments, the composite formulation may be applied to the copper layer 604. In other embodiments, the structure comprising the copper layer 604 may be dipped into a composite formulated organic coating as described above. The composite formula organic coating comprises base fluid (0.05 wt% to 2.5 wt%), additive (1.5 wt% to 10 wt%) and solvent (80 wt% to 99.8 wt%). In some embodiments, the ratio (volume ratio) of base fluid to additive in the composite formulated organic coating is from 1:3 to 10: 1.

In the above coating step, a step of curing the protective layer solution to form a nanowire dispersion promoting layer 606 is further included. In some embodiments, drying is performed, for example, by air gun drying, and a pre-bake treatment is performed.

In fig. 6C, a layer of nano-silver wires is disposed on the nano-wire dispersion promoting layer.

The following is a specific example of the dispersion effect of different organic coating materials with different composite formulations on nano-silver. The following examples are given only in terms of the ratio of the components of the base fluid and the additive of the present invention, and the ratio/selection of the solvent may be adjusted according to the preparation of general chemicals. The number of silver lines (particle number) and the size of silver lines (diameter) can be calculated and measured by using an optical microscope, an electronic microscope and a computer, but not limited thereto.

In other embodiments, the silane coupling agent complex fluid may be an epoxy silane coupling agent (formula (R) (R)) ₁ -O) ₂ -Si-R ₂ -Y). Wherein R is ₁ Functional groups which can undergo hydrolysis and form Si-OH include Cl, OMe (Me is a methyl group), OEt (Et is an ethyl group), OC ₂ H ₄ OCH ₃ OSiMe, etc.; r ₂ Hydrogen atom, methyl group, ethyl group, propyl group, butyl group, phenyl group, cyclohexyl group, vinyl group, propenyl group, aminopropyl group, aminoethylaminopropyl group, mercaptopropyl group, anilinomethyl group, or the like; y is a non-hydrolytic functional group, comprising a chain alkene functional group (mainly an ethylene functional group) and a terminal Cl and NH ₂ 、SH、N ₃ A hydrocarbon group of a functional group such as epoxy, (meth) acryloyloxy, isocyanate group, etc., i.e., a carbon functional group; x ₁ There may be mentioned carboxyl group, alkoxy group, sulfonic group, phosphorus group and the like.

The epoxy silane coupling agent may include, for example, hexamethyldisiloxane, tetrakis (trimethylsiloxy) silane, 3-glycidoxypropyltrimethoxysilane, or combinations thereof.

Amine-based silane coupling agents may include, but are not limited to, mono-, di-, tri-, and poly-amino groups, such as: phenylaminomethyltriethoxysilane, phenylaminomethyltrimethoxysilane or aminopropyltrimethoxysilane or their derivatives are used in combination.

The organic resin may be a polyurethane-based resin, for example: polyurethane, 4' -diphenylmethane diisocyanate, or a combination thereof.

In one embodiment, the organic ligand is, for example, a chelating agent, wherein the ligand atoms in the chelating agent are oxygen and nitrogen, sulfur, and also phosphorus, arsenic, and the like. The organic ligand can effectively react with functional groups at two ends of the coupling agent to form a bond. The chelating agent is an organic chelating agent, a metal chelating agent, or a combination thereof. The chelating agent may be one or more of ethylenediamine tetraacetic acid (EDTA), ethylenediamine, potassium sodium tartrate, etc.

In some embodiments, the composite formulated organic coating comprises a ringAn oxysilane coupling agent (i.e., a base fluid) and a chelating agent (i.e., an additive). Wherein the epoxy silane coupling agent (i.e., base fluid) is present in an amount of about 0.05 to about 5 weight percent of the composite formulated organic coating and the chelating agent (i.e., additive) is present in an amount of about 0.05 to about 10 weight percent of the composite formulated organic coating. The ratio of epoxy silane coupling agent to chelating agent is from 1:100 to 100:1, such as from 1:1 to 10:1, from 1:1 to 6:1, from 3:1 to 10:1, or from 3:1 to 6:1, and the like. In the table I, (A) represents an epoxy silane coupling agent, and is specifically shown as a formula 1; (B1) in Table I represents a chelating agent, in particular EDTA (C) ₁₀ H ₁₆ N ₂ O ₈ [ formula 2 ]]). Scheme 1 is to take 5ml of the chemical of formula 1 and 1.67ml of the chelating agent of formula 2 to mix into a 1.33 wt% solution (a + B1) of the composite formulation organic coating to treat the copper layer and measure the number of silver lines (number of particles) on the copper layer for various sizes; similarly, scheme 2 is to take 5ml of the chemical of formula 1 and 1.67ml of the chelating agent of formula 2 to mix into a 0.67 wt% solution (A + B1) of the composite formulation organic coating; similarly, scheme 3 was a solution (A + B1) of 2.5ml of the chemical of formula 1 mixed with 0.83ml of the chelating agent of formula 2 to 0.33 wt% of the composite formulated organic coating. As shown in the table, the number of silver wires (particle number) of various sizes on the copper layer was reduced, wherein the number of large-sized particles having a diameter of more than 40 μm was reduced to 5 or less, indicating that the degree of aggregation of the silver wires was improved.

Watch 1

	A(ml)	B1(ml)	Size of 10 μm≤20μm	The size is more than 20 mu m and less than or equal to 40 mu m	Size > 40 μm
						Scheme 1	5	1.67	4	0	0
Scheme 2	5	1.67	25	15	5
						Scheme 3	2.5	0.83	16	7	0
Untreated			33	8	10

In some embodiments, the epoxy silane coupling agent (i.e., base fluid) is present in an amount of about 0.5 to about 2.5 weight percent of the composite formulated organic coating, and the amino silane coupling agent (i.e., additive) is present in an amount of about 2 to about 10 weight percent of the composite formulated organic coating. The ratio (volume ratio) of the epoxy silane coupling agent to the amino silane coupling agent is 1:100 to 100:1, for example, 1:1 to 1:10, 1:1 to 1:6, 1:4 to 1:10, or 1:4 to 1:6, and the like. In the second table, (A) represents an epoxy silane coupling agent, specifically represented by formula 1; in Table two, (B2) represents an aminosilane coupling agent, specifically N-2 aminoethyl-3-aminopropyltrimethoxysilane ([ formula 3 ]). Scheme 4 is to take 2.5ml of the chemical shown in formula 1 and 10ml of the chemical shown in formula 3 to mix into a solution (a + B2) which accounts for 5.0 wt% of the composite formula organic coating, so as to treat the copper layer and measure the number of silver wires (particle number) with various sizes on the copper layer; similarly, scheme 5 is to take 1.3ml of the chemical of formula 1 and 5.2ml of the chemical of formula 3 to mix into a solution (A + B2) of 1.3 wt% of the composite formulation organic coating; similarly, scheme 6 is to take 2ml of chemical of formula 1 and 8ml of chemical of formula 3 to mix into a 1.0 wt% solution (A + B2) of the composite formulation organic coating; similarly, scheme 7 is to take 0.5ml of the chemical of formula 1 and 2ml of the chemical of formula 3 to mix into a 0.5 wt% solution (A + B2) of the composite formulation organic coating. Table two shows that the number of silver wires (number of grains) of various sizes on the copper layer is reduced, especially the number of grains of large size is reduced, indicating that the degree of aggregation of the silver wires is improved.

Watch two

	A(ml)	B2(ml)	The size is more than 10 mu m and less than or equal to 20 mu m	The size of the film is more than 20 mu m and less than or equal to 40 mu m	Size > 40 μm
						Scheme 4	2.5	10	6	4	3
Scheme 5	1.3	5.2	8	3	0
						Scheme 6	2	8	46	11	0
Scheme 7	0.5	2	8	2	0
						Untreated with			33	8	10

In some embodiments, the epoxysilane coupling agent (i.e., base fluid) and the polyurethane-based resin (i.e., additive) are mixed in a ratio of 1:1 to 100:1, such as 1:1 to 10:1, 10:1 to 100:1, or 5:1 to 10:1, and the like. In the third table, (A) represents an epoxy silane coupling agent, specifically represented by formula 1; in Table III, (B3) represents a polyurethane resin, specifically a polyurethane (formula 4). Scheme 8 is that 2.5ml of the chemical shown in formula 1 and 245ml of the polyurethane resin (shown in formula 4 in a volume percentage of 1%) are mixed to form a solution (A + B3) which accounts for 2.0 wt% of the organic coating in the composite formula, so as to treat the copper layer, and the quantity (particle number) of silver wires with various sizes on the copper layer is measured; similarly, scheme 9 is that 2.5ml of the chemical of formula 1 is mixed with 24.5ml of polyurethane resin (formula 4, volume percent is 1%) to form a solution (A + B3) which accounts for 1.1 wt% of the composite formula organic coating; similarly, scheme 10 is to take 2.5ml of the chemical of formula 1 and 2.45ml of the polyurethane-based resin (formula 4, 1% by volume) to mix into a 1.01 wt% solution (A + B3) of the composite formulation organic coating. Table three shows that the number of silver wires (number of particles) of various sizes on the copper layer is reduced, especially the number of large-sized particles is reduced, indicating that the degree of aggregation of the silver wires is improved.

Watch III

	A(ml)	B3(ml)	The size is more than 10 mu m and less than or equal to 20 mu m	The size is more than 20 mu m and less than or equal to 40 mu m	Size > 40 μm
						Scheme 8	2.5	245	72	5	1
Scheme 9	2.5	24.5	46	11	2
						Scheme 10	2.5	2.45	40	23	3
Untreated			33	8	10

In some embodiments, a combination of two or more additives may be mixed with the base fluid, for example, a combination of two additives, a polyurethane-based resin and an aminosilane coupling agent, is mixed with an epoxysilane coupling agent (i.e., a base fluid) in a ratio, for example, a ratio (volume ratio) of the base fluid to the additives is mixed in a range of 1:1 to 1:100, for example, in a range of 1:1 to 1:10, 1:1 to 1:5, or 1:1 to 1:4, etc.; in the combination type additive of this embodiment, the aminosilane coupling agent and the polyurethane-based resin are mixed in a ratio of 1:1 to 1:10, for example, in a ratio of 1:1 to 1:15 or in a ratio of 1:1 to 1: 2. In the third table, (A) represents an epoxy silane coupling agent, specifically represented by formula 1; in the third table, (B4) represents a combination of an aminosilane coupling agent ([ formula 3]) and a polyurethane-based resin ([ formula 4 ]). Scheme 11 is that 1ml of the chemical shown in formula 1, 4ml of the chemical shown in formula 3 and 90ml of polyurethane resin (shown in formula 4 in a volume percentage of 1%) are mixed to form a solution (A + B4) which accounts for 0.5 wt% of the organic coating in the composite formula, so as to treat the copper layer, and the quantity (particle number) of silver wires with various sizes on the copper layer is measured; similarly, scheme 12 is to take 1ml of the chemical of formula 1, 4ml of the chemical of formula 3 and 9.8ml of the polyurethane resin (formula 4, volume percent is 1%) to mix into a solution (A + B4) which is 0.5 wt% of the composite formulation organic coating. Table four shows that the number of silver wires (number of grains) of various sizes on the copper layer is reduced, especially the number of grains of large size is reduced, indicating that the degree of aggregation of the silver wires is improved.

Watch four

	A(ml)	B4	The size is more than 10 mu m and less than or equal to 20 mu m	The size is more than 20 mu m and less than or equal to 40 mu m	Size > 40 μm
						Scheme 11	1	Formula 3+ formula 4	28	10	4
Scheme 12	1	Formula 3+ formula 4	8	4	0
						Untreated			30	8	10

As used herein, "metal nanowires (metal nanowires)" is a collective term referring to a collection of metal wires comprising a plurality of elemental metals, metal alloys or metal compounds (including metal oxides), wherein the number of metal nanowires contained does not affect the scope of the claimed invention; and at least one cross-sectional dimension (i.e., diameter of the cross-section) of the single metal nanowire is less than about 500nm, preferably less than about 100nm, and more preferably less than about 50 nm; while the metal nanostructures referred to herein as "wires" have a predominantly high aspect ratio, e.g., between about 10 and 100,000, more particularly, the metal nanowires may have an aspect ratio (length: diameter of cross-section) of greater than about 10, preferably greater than about 50, and more preferably greater than about 100; the metal nanowires can be any metal including, but not limited to, silver, gold, copper, nickel, and gold-plated silver. Other terms such as silk (silk), fiber (fiber), tube (tube), etc. with the same dimensions and high aspect ratios are also within the scope of the present application. In some embodiments, the layer of nanosilver 608 is prepared by coating a coating composition containing nanosilver structures. To form the coating composition, the silver nanowires are typically dispersed to form a silver nanowire ink/dispersion to aid in the coating process. It is to be understood that any suitable liquid that forms a stable nano-silver wire dispersion may be used, as described herein. Preferably, the silver nanowires are dispersed in water, alcohols, ketones, ethers, hydrocarbons or aromatic solvents (benzene, toluene, xylene, etc.). More preferably, the liquid has a volatility and a boiling point of no greater than 200 ℃, no greater than 150 ℃, or no greater than 100 ℃. After the curing/drying step, the solvent and other substances in the slurry are volatilized, and the metal nanowires are randomly distributed on the surface of the substrate, and the metal nanowires can contact with each other to provide a continuous current path, thereby forming a conductive network (conductive network).

A layer, which may also be referred to as a matrix, may be applied to form a composite structure with the metal nanowires to have certain specific chemical, mechanical and optical properties, such as to provide adhesion of the metal nanowires to the substrate or better physical mechanical strength. In yet another aspect, the film layer is made of certain specific polymers to provide additional scratch and abrasion resistant surface protection to the metal nanowires, in which case the film layer may also be referred to as a hard coat or overcoat (over coat), and the use of materials such as polyacrylates, epoxies, polyurethanes, polysilanes, silicones, poly (silicon-acrylic) and the like may provide the metal nanowires with higher surface strength to improve scratch resistance. In addition, ultraviolet stabilizers (UV stabilizers) may be added to the film layer to improve the ultraviolet resistance of the metal nanowires. However, the above is only to illustrate the possibility of other additional functions/names of the film layer and is not to be construed as limiting the invention.

In an embodiment of the present invention, a patterning process, including pattern exposure, development, etching, etc., may be performed on the stacked structure to form a circuit pattern on the copper layer 604, the silver nanowire layer 608, or both. While the nanowire dispersion promoting layer 606 may be etched in the step of etching the copper layer 604 or etching the nanowire layer 608; or the copper layer 604, the nanowire layer 608, and the nanowire dispersion promoting layer 606 can be etched in the same etching step.

As can be seen from the above, in the stacked structure of the copper layer and the nano silver wire layer, the nano wire dispersion promoting layer can provide a significant uniform dispersion effect, so that the nano silver can be uniformly distributed on the copper layer without aggregation.

Embodiments of the present invention may solve the peeling problem of the contact structure, so that an electronic device including the contact structure can be produced with a yellow light process and has high reliability. The electronic device comprising the conductive film layer is manufactured in a yellow light process production mode, so that better time efficiency can be provided, and the production cost can be reduced.

Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made by those skilled in the art without departing from the spirit and scope of the invention.

Claims

1. A contact structure, comprising:

a substrate;

a copper layer disposed on the substrate;

a nanowire dispersion promoting layer disposed on the copper layer; and

a nano silver wire layer disposed on the nano wire dispersion promoting layer, wherein between the copper layer and the nano silver wire layer, the number of particles having a diameter of more than 40 μm is 5 or less.

2. The contact structure of claim 1, wherein the nanowire dispersion promoting layer is an organic layer formed by curing a composite formulated organic coating comprising: 0.05 wt% to 2.5 wt% of base fluid, 1.5 wt% to 10 wt% of additive and 80 wt% to 99.8 wt% of solvent.

3. The contact structure of claim 2, wherein the base fluid is a first coupling agent, the additive is a second coupling agent, a chelating agent, an organic resin, or a combination thereof, and the first coupling agent is different from the second coupling agent.

4. The contact structure of claim 3, wherein the first coupling agent is an epoxy silane coupling agent and the second coupling agent is an amine silane coupling agent.

5. The contact structure of claim 3, wherein the base fluid is an epoxy silane coupling agent, the additive is a chelating agent, and a volume ratio of the epoxy silane coupling agent to the chelating agent is 3: 1.

6. The contact structure of claim 3, wherein the base fluid is an epoxy silane coupling agent, the additive is an amino silane coupling agent, and the volume ratio of the epoxy silane coupling agent to the amino silane coupling agent is 1: 4.

7. The contact structure of claim 1, wherein the nanowire dispersion promoting layer has a thickness of about 50 to about 100 nanometers.

8. An electronic device, characterized in that it comprises a contact structure according to any one of claims 1 to 7.

9. The electronic device of claim 8, wherein the contact structure is located in a peripheral region of the electronic device.