CN114975316A - Semiconductor package and method of forming the same - Google Patents

Abstract

The present application provides a semiconductor package and a method of forming the same, the semiconductor package including a die and a substrate, wherein the substrate includes a plurality of layers stacked in layers, the die is disposed on the substrate, a tubular structure is embedded in the substrate, a cross-sectional shape of the tubular structure is closed, and the tubular structure has a bonding surface in a horizontal plane. The semiconductor packaging piece provided by the application at least solves the problem that the heat pipe in the semiconductor packaging piece falls off.

Description

Semiconductor package and method of forming the same

Technical Field

The present application relates to the field of semiconductors, and more particularly, to a semiconductor package having a heat sink function embedded in a substrate and a method for forming the same.

Background

The conventional BT resin (bissmeimide Triazine) Core (Core) substrate has a low thermal conductivity, and referring to fig. 1, when the die is buried in the substrate 10 and operated, heat is easily accumulated in the substrate 10. If the die is a chip with high energy consumption and high heat energy, the heat generated by the chip during operation will be accumulated on the substrate 10 because the heat cannot be timely conducted out, and thus the temperature of the chip will not meet the requirement of the customer. In order to remove the Heat energy generated by the chip during operation and avoid the Heat energy from being accumulated on the substrate 10, a known method is to embed a "Heat Pipe" 20 in the substrate 10, and the Heat Pipe 20 contains a phase change material, which can change between a liquid phase and a vapor phase according to the temperature, so that the phase change material in the Heat Pipe 20 can absorb and release Heat to achieve the Heat conduction function. However, the heat pipe 20 is made of metal, and has a different Coefficient of Thermal Expansion (CTE) from that of the substrate 10, and when the heat pipe 20 is embedded in the substrate 10, the two have different deformation amounts against Thermal Expansion and contraction, so that the heat pipe 20 is easily separated from the substrate 10, and heat conduction and dissipation are not facilitated.

Disclosure of Invention

In view of the problems in the related art, an object of the present application is to provide a semiconductor package and a method for forming the same, which at least solve the problem of thermal tube detachment in the semiconductor package.

To achieve the above object, the present application provides a semiconductor package including: the die comprises a substrate and a tube core, wherein the substrate comprises a plurality of layers stacked in a layered mode, the tube core is arranged on the substrate, a tubular structure is embedded in the substrate, the cross-sectional shape of the tubular structure is closed, and the tubular structure is provided with a joint surface in a horizontal plane.

In some embodiments, the tubular structure is composed of two different lattice arrangements of metallic materials.

In some embodiments, the two different lattice arrangements of metallic materials include a first metallic material and a second metallic material located at a periphery of the first metallic material, wherein the second metallic material forms an outer surface of the tubular structure, the second metallic material being denser than the first metallic material.

In some embodiments, the first metallic material is a layer of electroplated metal and the second metallic material is a layer of sputtered seed.

In some embodiments, the inner surface of the tubular structure is a roughened surface having a microstructure.

In some embodiments, one end of the tubular structure overlaps the location of the die.

In some embodiments, the other end of the tubular structure is connected to the cold zone.

In some embodiments, the cold zone includes a through hole located below the substrate.

In some embodiments, the tubular structure includes a bend disposed adjacent to the through-hole in the substrate.

In some embodiments, the engagement surface of the tubular structure is parallel to the direction of extension of the tubular structure.

In some embodiments, adjacent layers of the plurality of layers of the substrate have an interface therebetween.

In some embodiments, the engagement surface of the tubular structure coincides with one engagement surface between adjacent layers of the substrate.

The present application also provides a method of forming a semiconductor package, comprising: providing a first dielectric layer for forming a substrate, and forming a first groove on a first surface of the first dielectric layer; providing a second dielectric layer for forming the substrate, and forming a second groove on a second surface of the second dielectric layer; and oppositely pressing the first dielectric layer and the first surface as well as the second surface of the second dielectric layer, so that the first groove and the second groove are combined to form a tubular structure.

In some embodiments, prior to the pressing the first dielectric layer and the first surface opposite the second surface of the second dielectric layer, the method further comprises: forming a seed crystal layer on the surface in the first groove and the second groove by a sputtering process; a metal layer is formed on the seed layer by an electroplating process.

Drawings

The various aspects of the invention are best understood from the following detailed description when read with the accompanying drawing figures. It should be noted that, in accordance with standard practice in the industry, various components are not drawn to scale. In fact, the dimensions of the various elements may be arbitrarily increased or reduced for clarity of discussion.

Fig. 1 is a schematic structural diagram of a semiconductor package in the prior art.

Fig. 2 is a schematic cross-sectional view of a semiconductor package according to an embodiment of the present application.

Fig. 3 is a schematic microstructure diagram of a tubular structure of a semiconductor package according to an embodiment of the present application.

Fig. 4 a-4 e are schematic cross-sectional shapes of tubular structures according to various embodiments of the present application.

Fig. 5a and 5b are schematic cross-sectional views of semiconductor packages according to further embodiments of the present application.

Fig. 6 is a schematic top view of a semiconductor package according to an embodiment of the present application.

Fig. 7 is a perspective view of a substrate of a semiconductor package according to an embodiment of the present application.

Fig. 8 a-8 e are top views of structures of various examples of semiconductor packages.

Fig. 9 is a temperature histogram of a number of examples shown in fig. 8 a-8 e.

Fig. 10 a-10 e are schematic cross-sectional views at various steps in a method of forming a semiconductor package according to an embodiment of the present application.

Detailed Description

In order to better understand the spirit of the embodiments of the present application, the following further description is given in conjunction with some preferred embodiments of the present application.

Embodiments of the present application will be described in detail below. Throughout the specification, the same or similar components and components having the same or similar functions are denoted by like reference numerals. The embodiments described herein with respect to the figures are illustrative in nature, are diagrammatic in nature, and are used to provide a basic understanding of the present application. The embodiments of the present application should not be construed as limiting the present application.

As used herein, the terms "substantially", "substantially" and "about" are used to describe and illustrate minor variations. When used in conjunction with an event or circumstance, the terms can refer to instances where the event or circumstance occurs precisely as well as instances where the event or circumstance occurs in close proximity.

For convenience in description, "first," "second," "third," and the like may be used herein to distinguish between different components of a figure or series of figures. "first," "second," "third," etc. are not intended to describe corresponding components.

Fig. 2 is a schematic cross-sectional view of a semiconductor package according to an embodiment of the present application. Referring to fig. 2, a semiconductor package 1000 includes a substrate 100 and a die 200 stacked on the substrate 100 in a vertical direction Z. A tubular structure 300 is embedded in the substrate 100. In the cross-sectional view shown in fig. 2, the tubular structure 300 has a closed cross-sectional shape. In some embodiments, the substrate 100 may be a cored substrate and the tubular structure 300 may be disposed in a core (core) layer of the cored substrate.

The tubular structure 300 has an interface 302 and a first portion 310 and a second portion 320 that interface with each other at the interface 302. The engagement face 302 lies in a horizontal plane perpendicular to the vertical direction Z. The first portion 310 and the second portion 320 of the tubular structure 300 may be formed separately in different layers of the substrate and then butted against each other such that the first portion 310 and the second portion 320 form an interface 302 therebetween. The tubular structure 300 thus formed with the engagement surface 302 avoids the problem of its falling off the substrate.

In the embodiment of fig. 2, the substrate 100 comprises a first layer 110 and a second layer 120 stacked, wherein the second layer 120 is located above the first layer 110. The first portion 310 of the tubular structure 300 is located in the first layer 110 and is in physical contact with the first layer 110. Second portion 320 is located in second layer 120 and is in physical contact with second layer 120. The first layer 110 and the second layer 120 may be made of a dielectric material, such as polypropylene (PP). The materials of the first layer 110 and the second layer 120 may be the same or may be different. The first layer 110 and the second layer 120 have an interface 102 therebetween. The interface 302 between the first portion 310 and the second portion 320 is coplanar with the interface 102 between the first layer 110 and the second layer 120. While two layers (i.e., the first layer 110 and the second layer 120) of the substrate 100 are shown in fig. 2, in other embodiments, the number of layers of the substrate 100 may be more than two, the tubular structure 300 may be disposed in any two adjacent layers, and the engagement surface of the tubular structure 300 is coplanar with the engagement surfaces of the two layers. The number of tubular structures 300 in the substrate 100 may be provided in any number.

By embedding the tubular structure 300 in the substrate 100, the tubular structure 300 can be utilized to dissipate heat generated by the die 200, improving the heat dissipation capability of the semiconductor package 1000. Moreover, by adopting the design of the embedded tube structure 300, a heat sink does not need to be disposed outside the substrate 100, and the size of the semiconductor package 1000 is reduced, so that the semiconductor package 1000 better conforms to the development direction of miniaturization.

Specifically, the tubular structure 300 is made of a first metal material 330 and a second metal material 340 arranged in two different lattices, the first metal material 330 and the second metal material 340 being located at the periphery of the first metal material 330. The first metal material 330 and the second metal material 340 are different in degree of densification due to different lattice arrangements of the first metal material 330 and the second metal material 340. According to an embodiment of the present application, the second metallic material 340 is denser than the first metallic material 330. The first metallic material 330 may be an electroplated metallic layer (e.g., a copper layer) and the second metallic material 340 may be a sputtered seed layer (e.g., a copper seed layer). In this embodiment, the sputtering seed layer is a metal layer attached to the surface of the substrate 100 by sputtering, so that the sputtered metal layer has a strong adhesion capability to the substrate, which is a heterogeneous material, and then the metal layer is electroplated by electroplating deposition to form a tube wall structure, thereby improving the delamination and detachment phenomena in the use process of pressing the heat dissipation tube product into the substrate. In other embodiments, the first metal material 330 and the second metal material 340 may be other metal materials.

The second metallic material 340 forms an outer surface 345 of the tubular structure 300. The outer surface 345 of the tubular structure 300 may be in physical contact with the first layer 110 and the second layer 120. The first metallic material 330 forms an inner surface 335 of the tubular structure 300. Fig. 3 is a schematic microstructure diagram of a tubular structure of a semiconductor package according to an embodiment of the present application. Referring to fig. 3, the inner surface 335 of the tubular structure 300 may be provided with microstructures 350 such that the inner surface 335 is a rough surface. In some embodiments, the shape of microstructures 350 can be dendritic, and in other embodiments, microstructures 350 can be other shapes. The microstructures 350 may be used to direct the phase change material of the liquid phase within the tubular structure 300.

In the embodiment shown in fig. 2, the tubular structure 300 has a closed cross-sectional shape that is circular in shape. In other embodiments, the tubular structure 300 may have other shapes of closed cross-sectional shapes. Fig. 4 a-4 e are schematic cross-sectional shapes of tubular structures according to various embodiments of the present application. Referring to fig. 4 a-4 c, the cross-sectional shape of the tubular structure 300 also includes, but is not limited to, oval (fig. 4a), rectangular (fig. 4b), trapezoidal (fig. 4c), and the like. In the embodiment shown in fig. 4a and 4b, the first portion 310 and the second portion 320 of the tubular structure 300 have a symmetrical cross-sectional shape with respect to the plane of the engagement surface 302. The transversely extending line of engagement face 302 passes through the center of the circular, elliptical, or rectangular cross-sectional shape of tubular structure 300. However, in other embodiments, the cross-sectional shape of the first portion 310 and the second portion 320 of the tubular structure 300 may be asymmetric with respect to the engagement face 302.

In some embodiments, as shown with reference to fig. 4d and 4e, the first portion 310 of the tubular structure 300 is embedded in the second layer 120, while the second portion 320 is disposed on the surface of the first layer 110, the first portion 310 and the second portion 320 interfacing to form a cross-sectional shape having a semi-ellipse. When the plurality of tube structures 300 are provided in the substrate 100, the plurality of tube structures 300 may have the same sectional shape, or the plurality of tube structures 300 may be provided to have different sectional shapes.

Fig. 5a is a schematic cross-sectional view of a semiconductor package according to another embodiment of the present application. Referring to fig. 5a, a tubular structure 300 extends within the substrate 100. One end 301 of the tubular structure 300 overlaps the die 200 in the vertical direction Z, and the other end 303 of the tubular structure 300 is connected to the cold zone 400. The cold zone 400 is located below the substrate 100. In this embodiment, the die 200 and the cold zone 400 do not overlap in the vertical direction Z. The cold zone 400 may include a plurality of through holes 410 exposed from the lower surface of the substrate 100 and extending to the outside of the substrate 100. In some embodiments, the via 410 may be formed of a metal material having good heat dissipation properties. The via 410 may be a via without electrical functionality. The through-hole 410 and the tubular structure 300 may overlap in the vertical direction Z. The through-hole 410 may be connected to (in physical contact with) the tubular structure 300. In some implementations, a mold 500 is also disposed over the substrate 100 and around the die 200 to protect the die 200.

In operation, a phase change material that changes form as a function of temperature is disposed within the tubular structure 300. Phase change materials exhibit a vapor phase at high temperatures and a liquid phase at low temperatures. The heat generated by the die 200 causes the phase change material in the tubular structure 300 thereunder to absorb the heat and take on a vapor phase form; the phase change material in the vapor phase then moves along the path of the tubular structure 300 from the die 200 to the cold zone 400, where it changes from the vapor phase to the liquid phase upon cooling, and releases the absorbed heat at the cold zone 400, thereby effecting heat transfer from the die 200 to the cold zone 400. The phase change material in the liquid phase is then wicked back from the cold zone 400 to the die 200 for heat transfer again by the microstructures 350 on the inner surface 335 of the tubular structure 300. Therefore, by providing the cold zone 400 near the end 303 of the tubular structure 300 remote from the die 200, heat generated by the die 200 can be transferred to the cold zone 400 via the tubular structure 300 (see arrow in fig. 5 a), which may improve heat dissipation efficiency. By providing the through-holes 410 in the cold zone 400 in connection with the tubular structure 300, the heat dissipation efficiency can be further improved. As the heat dissipation efficiency is increased, the density of chips that can be arranged in a given area can be increased accordingly.

Fig. 5b is a schematic cross-sectional view of a semiconductor package according to another embodiment of the present application. The embodiment shown in fig. 5b is similar to the embodiment shown in fig. 5a, and only the differences between fig. 5b and fig. 5a will be discussed below. In the embodiment of fig. 5b, two dies 200a and 200b are provided on the substrate 100, arranged adjacently. One end 301 of the tubular structure 300 may be disposed adjacent to the space between the two dies 200a and 200 b. For example, one end 301 of the tubular structure 300 may overlap a sidewall of an adjacent die 200b of the die 200a in the vertical direction Z. In other embodiments, one end 301 of the tubular structure 300 may overlap the space between the dies 200a, 200b in the vertical direction Z, or one end 301 of the tubular structure 300 may overlap a sidewall of an adjacent die 200a of the die 200b in the vertical direction Z. Thus, both dies 200a and 200b may efficiently dissipate heat through the common tubular structure 300.

Fig. 6 is a schematic top view of a semiconductor package according to an embodiment of the present application. Referring to fig. 6, the tubular structure 300 may have bent portions 360a, 360b to change the extending path of the tubular structure 300. In some embodiments, the through hole 160 is disposed in the substrate 100, and the bent portions 360a, 360b of the tubular structure 300 may be disposed adjacent to the through hole 160. Specifically, when the extending path of the tubular structure 300 is to pass through the through hole 160, the bent portion 360a is disposed adjacent to the through hole 160 so that the extending path of the tubular structure 300 bypasses the through hole 160. Then, the bent portion 360b is further provided such that the extending path of the tubular structure 300 extends toward the cold zone 400.

Fig. 7 is a perspective view of a substrate of a semiconductor package according to an embodiment of the present application. The extending direction of the extending path of the tubular structure 300 can be changed by 90 degrees by the bending portion 360. In other embodiments, the bent portions (e.g., the bent portions 360a, 360b, 360) may be disposed adjacent to other electrical functional components (e.g., conductive traces or passive elements, etc.) in the substrate 100 to avoid these components. According to the position plan of the lines and the through holes in the substrate 100, the extending direction of the extending path of the tubular structure 300 can be changed by the bending part.

As discussed with reference to fig. 6 and 7, when the tubular structure 300 is disposed, it is not only necessary to arrange the tubular structure according to the arrangement of the heat sources with heat dissipation requirements, but also to consider the position planning of the circuit and the through holes in the substrate 100, and the bending portion can be disposed to avoid the electrical functional components, so as to prevent the electrical path of the semiconductor package 1000 from being damaged, so that the semiconductor package 1000 can maintain complete circuit signals.

Fig. 8 a-8 e are top views of structures of various examples of semiconductor packages. Fig. 9 is a temperature histogram of a number of examples shown in fig. 8 a-8 e. The heat dissipation effects of the examples shown in fig. 8 a-8 e will be compared with those shown in fig. 8 a-8 e and fig. 9.

First, referring to the example 810 shown in fig. 8a, in this example 810, only the cold zone 400 including the plurality of through holes 410 is provided under the die 200, without the tubular structure 300 as described above.

In the example 820 shown in fig. 8b, a tubular structure 300 is provided in the substrate 100 below the die 200 extending through below the die 200, the tubular structure 300 extending away from the die 200 in directions (r) and (c), respectively. The cold zone is not provided in this example 820.

In the example 830 shown in fig. 8c, a tubular structure 300 is provided below the die 200 that extends in direction (c). Further, at the end of the tubular structure 300 remote from the die 200, a cold zone 400 is provided comprising a plurality of through holes 410.

In the example 840 shown in fig. 8d, a tubular structure 300 is provided below the die 200, extending in direction (c). In example 840, a cold zone 400 comprising a plurality of through holes 410 is also provided adjacent to an end of the tubular structure 300 distal from the die 200.

In the example 850 shown in fig. 8e, a plurality of tubular structures 300 are disposed beneath the first die 200a, extending along directions (r), (c), and (c), respectively. Wherein, for the tubular structure 300 extending along the direction (c), a cold zone 400 comprising a plurality of through holes 410 is further provided adjacent to an end of the tubular structure 300 remote from the die 200.

Fig. 9 shows temperature histograms for a number of examples shown in fig. 8 a-8 e. For comparison, three posts Ta, Tb and Tc are shown for each of the examples 810-850 above, respectively. The three pillars Ta, Tb, and Tc correspond to the dimensions of the die 200, respectively. The size of the corresponding die 200 for each pillar Ta is 2.80x5.90x0.78mm ³ . The pillars Tb and Tc correspond to the same die 200 size of 2.80x2.80x0.78mm ³ 。

As shown in fig. 8a to 9, for the die 200 with larger size and generating larger heat, as shown by the pillar Ta, the example 820-850 each effectively reduces the temperature of the die 200 compared to the example 810 without the tubular structure 300. Example 820-850 also reduces the temperature of the die 200 compared to example 810 without the tubular structure 300 for a smaller size die 200, as indicated by the posts Tb and Tc. Comparing example 820 and 850, it can be seen that example 850 has the best heat dissipation effect. And comparing the pillars Tb and Tc, the pillars Tb and Tc in each of the examples 820 and 850 can achieve substantially the same problem, which can prove that the heat dissipation effect of the present application is stable.

The semiconductor package according to the embodiment of the present disclosure may be applied to a package-on-package (PoP) technology, a package-on-package (seub) technology, and a three-dimensional fan-out (3D-fanout-package, 3DFOP) technology. In some embodiments, the semiconductor Package may also be applied to a Ball Grid Array Package (BGA) and an Antenna In Package (AiP). As long as the semiconductor package has the problem of over-high die temperature caused by high-density heat sources, the heat dissipation mode provided by the embodiment of the present application can be used to improve the heat dissipation.

In another aspect, embodiments of the present application also provide a method of forming a semiconductor package. Fig. 10 a-10 e show schematic structural diagrams of various steps in a method of forming a semiconductor package according to an embodiment of the present application.

Referring to fig. 10a, a first dielectric layer 910 and a second dielectric layer 920 for forming a substrate are provided. In some embodiments, the material of the first dielectric layer 910 and the second dielectric layer 920 may be, for example, polypropylene (PP).

Then, a first recess 930 and a second recess 940 may be formed in the first dielectric layer 910 and the second dielectric layer 920, respectively, using, for example, an etching process (fig. 10 c). Referring to FIG. 10b, taking the first dielectric layer 910 as an example, a photoresist 912 is disposed on the surface of the first dielectric layer 910, and then a patterned photomask 914 is disposed on the photoresist 912. The first dielectric layer 910, photoresist 912 and photomask 914 are exposed to radiation and the photoresist 912 and first dielectric layer 910 not covered by the photomask 914 are removed, thereby forming a first recess 930 in the first dielectric layer 910 (fig. 10 c). In other embodiments, other suitable methods may be used to form the recess of the first dielectric layer 910. In some embodiments, the recess 940 of the second dielectric layer 920 may be formed in the same manner as the recess of the first dielectric layer 910 is formed (fig. 10 c).

Referring to fig. 10c, a first recess 930 and a second recess 940 are formed in the first dielectric layer 910 and the second dielectric layer 920, respectively, through the steps shown in fig. 10 b. In some embodiments, the shape of the first and second recesses 930, 940 includes a semi-circle, semi-ellipse, rectangle, etc., or the first and second recesses 930, 940 may have sloped sidewalls. The first and second recesses 930 and 940 may have the same or different shapes. The first and second recesses 930 and 940 may have the same or different depths. The number of the first recesses 930 may be the same as or different from that of the second recesses 940. The plurality of first recesses 930 and the plurality of second recesses 940 may correspond one-to-one. The first recess 930 is identical in shape and size at the surface of the first dielectric layer 910 to the second recess 940 at the second dielectric layer 920.

In some embodiments, the first recess 930 and the second recess 940 may be respectively configured with a bending portion (corresponding to the bending portions 360a, 360b, 360) according to a layout design of a via or other electrical functional component to be formed, so as to change the extending direction of the first recess 930 and the second recess 940.

Referring to fig. 10d, the first and second portions 310 and 320 of the tubular structure are formed in the first and second recesses 930 and 940. In some embodiments, forming the first portion 310 includes forming a seed layer (i.e., the second metal material 340, such as a copper seed layer) in the first recess 930 by a sputtering process, and then forming a metal layer (i.e., the first metal material 330, such as copper) on the seed layer by an electroplating process. Similarly, forming the second portion 320 includes forming a seed layer in the second groove 940 by a sputtering process, and then forming a metal layer on the seed layer by an electroplating process. Because the sputtered metal contacts with the heterogeneous material of the substrate to have strong adhesion capability when the seed layer is formed by sputtering, the sputtered seed layer is adhered to the surfaces of the first dielectric layer 910 and the second dielectric layer 920 by using a sputtering method, and then the metal layer is deposited by electroplating to form a pipe wall structure, and the sputtered seed layer has strong adhesion capability with the first dielectric layer 910 and the second dielectric layer 920, thereby improving the layering and separation phenomenon generated in the use process of pressing the existing radiating pipe finished product in the substrate.

The surfaces of the first and second portions 310 and 320 in the first and second recesses 930 and 940 may then be treated to form microstructures (such as the microstructure 350 shown in fig. 3) on the surfaces of the first and second portions 310 and 320.

Referring to fig. 10e, the first dielectric layer 910 and the second dielectric layer 920 are pressed against each other, so that the first portion 310 and the second portion 320 are correspondingly joined to form the tubular structure 300. The resulting tubular structure 300 has an interface between the first portion 310 and the second portion 320, and the interface between the first portion 310 and the second portion 320 (such as the interface 302 described above with reference to fig. 2) is coplanar with the interface between the first dielectric layer 910 and the second dielectric layer 920 (such as the interface 102 described above with reference to fig. 2).

After the first dielectric layer 910 and the second dielectric layer 920 are laminated, a sealing and vacuum-pumping process may be performed on the tubular structure 300. Then, after the tubular structure 300 is formed, the tubular structure 300 is filled with a phase change material.

In the method for forming a semiconductor package provided in the embodiments of the present application, the tubular structure 300 may be directly formed in the substrate 900 by, for example, sputtering or electroplating, and the method for forming the tubular structure 300 overcomes the problem that the heat pipe is easily detached when the temperature is increased because the heat pipe is different from the substrate in the conventional arrangement and is embedded in the substrate.

The tubular structure 300 formed by the method of directly forming the tubular structure 300 in the substrate 900, such as sputtering and electroplating, provided by the application can also overcome the problems of the existing heat pipe that the structure is reduced to cause weakness and the heat transfer effect is reduced after the heat pipe is embedded in the substrate due to larger volume (the diameter of the existing miniature commercial heat pipe is about 2 mm-10 mm); meanwhile, the problem that the substrate structure is fragile due to the fact that the traditional heat pipe is buried in the substrate is solved. Further, in some embodiments, a sputtering seed layer is formed by sputtering, such a sputtering seed layer has a strong adhesion capability when contacting with a heterogeneous material such as a substrate, and then a plating metal layer is deposited by electroplating to form the tubular structure 300, thereby improving the delamination and detachment phenomenon during the use process of the existing heat dissipation tube product pressed in the substrate.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions and alterations herein without departing from the spirit and scope of the present disclosure.

Claims (14)

1. A semiconductor package, comprising:

a die; and

a substrate comprising a plurality of layers stacked in layers, the die being disposed on the substrate, a tubular structure being embedded in the substrate, the tubular structure being closed in cross-sectional shape and having a joint face in a horizontal plane.

2. The semiconductor package of claim 1, wherein the tubular structure is composed of two metal materials with different lattice arrangements.

3. The semiconductor package of claim 2, wherein the two different lattice arrangements of metal materials comprise a first metal material and a second metal material located at a periphery of the first metal material, wherein the second metal material forms an outer surface of the tubular structure, and wherein the second metal material is denser than the first metal material.

4. The semiconductor package according to claim 3, wherein the first metal material is a plated metal layer and the second metal material is a sputtered seed layer.

5. The semiconductor package according to claim 1, wherein the inner surface of the tubular structure is a roughened surface with microstructures.

6. The semiconductor package of claim 1, wherein one end of the tubular structure overlaps a location of the die.

7. The semiconductor package according to claim 6, wherein the other end of the tubular structure is connected to a cold zone.

8. The semiconductor package of claim 7, wherein the cold zone comprises a via under the substrate.

9. The semiconductor package according to claim 1, wherein the tubular structure comprises a bent portion disposed adjacent to the through hole in the substrate.

10. The semiconductor package according to claim 1, wherein the bonding surface of the tubular structure is parallel to an extending direction of the tubular structure.

11. The semiconductor package of claim 1, wherein adjacent layers of the plurality of layers of the substrate have bonding surfaces therebetween.

12. The semiconductor package according to claim 11, wherein the bonding surface of the tubular structure coincides with a bonding surface between adjacent layers of the substrate.

13. A method of forming a semiconductor package, comprising:

providing a first dielectric layer for forming a substrate, and forming a first groove on a first surface of the first dielectric layer;

providing a second dielectric layer for forming the substrate, and forming a second groove on a second surface of the second dielectric layer;

and pressing the first dielectric layer and the first surface opposite to the second surface of the second dielectric layer so that the first groove and the second groove are combined to form a tubular structure.

14. The method of claim 13, wherein prior to the pressing the first dielectric layer and the first surface opposite the second surface of the second dielectric layer, the method further comprises:

forming a seed layer on the surface in the first groove and the second groove by a sputtering process;

a metal layer is formed on the seed layer by an electroplating process.

Images