CN114975075A - Method for distinguishing positive and negative crystal orientations of Si wafer - Google Patents
Method for distinguishing positive and negative crystal orientations of Si wafer Download PDFInfo
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- CN114975075A CN114975075A CN202110212985.4A CN202110212985A CN114975075A CN 114975075 A CN114975075 A CN 114975075A CN 202110212985 A CN202110212985 A CN 202110212985A CN 114975075 A CN114975075 A CN 114975075A
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- wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67282—Marking devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a method for distinguishing the positive and negative crystal orientation of a Si wafer, which mainly relates to the field of the production and manufacturing process of silicon wafers.A marking pen is used for marking a line on one side of a crystal bar slot and recording the line; after the crystal bar is cut, the wafer with marked positions is placed on the same side of the flat opening of the wafer according to the marks marked by the lines, the direction of the wafer is confirmed to be consistent, and the positive and negative crystal directions of the wafer can be judged from the placing direction of the wafer; and placing the placed wafers into a wafer basket in sequence, placing the wafers into a cleaning machine for cleaning, and scribing again on the same side of the flat opening of the wafers after cleaning. Therefore, when the scribing line is processed at a later station, the positive and negative crystal directions of the wafer can be confirmed according to whether the scribing line positions are on the same side, the product abnormity caused by crystal direction errors is avoided, and the yield of the product and the speed for detecting the positive and negative crystal directions of the wafer are improved.
Description
Technical Field
The invention mainly relates to the field of silicon wafer production and manufacturing processes, in particular to a method for distinguishing positive and negative crystal orientations of a Si wafer.
Background
The processing mode of the semiconductor silicon wafer mainly comprises a cutting process, a grinding process, a surface treatment process and a polishing process, wherein the cutting process is a processing initial war, influences the effect of the subsequent process and is in a key position.
In the process of cutting the wafer from the crystal bar, the crystal bar and the wafer are circular and have the same front and back, and cannot be distinguished when subsequent process technology is carried out, so that abnormal conditions such as reverse wafer surface, wrong wafer orientation and the like can occur, and the wafer is scrapped. According to the requirements of the specifications of the customer products, the crystal bar is subjected to opening flattening on the surface of the crystal bar so as to be positioned during post-processing.
Disclosure of Invention
The invention provides a method for distinguishing positive and negative crystal orientations of a Si wafer, which mainly relates to the field of production and manufacturing processes of silicon wafers and is characterized in that S1: firstly, drawing a line on one side of a flat opening of a crystal bar by using a marking pen, recording the marking position, and judging the direction of a wafer according to the drawing position; s2: after the crystal bar is cut, the wafer with marked positions is placed on the same side of the flat opening of the wafer according to the marks marked by the lines, the direction of the wafer is confirmed to be consistent, and the positive and negative crystal directions of the wafer can be judged from the placing direction of the wafer; s3: putting the placed wafers into a wafer basket in sequence, and putting the wafers into a cleaning machine for cleaning process; s4: and drawing a line again on the same side of the flat opening of the wafer after cleaning, and judging whether the product is feasible according to whether the line drawing position is on the same side.
In an embodiment of the invention, the position of the mark S1 is the flat mouth of the ingot, and the front and back directions of the wafer are determined according to the position of the scribe line.
In an embodiment of the invention, the mark position of S4 is a flat edge of the wafer, and the wafer orientation is determined according to whether the scribe line positions are on the same side.
Based on the above, the method for identifying the positive and negative crystal orientations of the Si wafer according to the embodiments of the present invention is convenient for the post-processing to confirm the positive and negative crystal orientations of the wafer according to whether the scribe positions are on the same side, thereby avoiding the product abnormality caused by the crystal orientation error, and improving the yield of the product and the speed of inspecting the positive and negative crystal orientations of the wafer.
Drawings
FIG. 1 is a schematic flow chart of an embodiment of the present invention.
FIG. 2 is a schematic view of the wafer flat position of the present invention.
Detailed Description
The technical solution of the present invention will be described in detail by the following embodiments.
The method mainly relates to the field of silicon wafer production and manufacturing processes, and the implementation flow schematic diagram of the method is as shown in figure 1: step 1, drawing a line on one side of a flat opening of a crystal bar by using a marking pen, recording a marking position, and judging the direction of a wafer according to the drawing position; step 2, after the crystal bar is cut, placing the wafer with marked positions on the same side of a flat opening (shown in figure 2) of the wafer according to marks marked by the drawn lines, confirming that the directions of the wafer are consistent, and judging the positive and negative crystal directions of the wafer from the placing direction of the wafer; step 3, putting the placed wafers into a wafer basket in sequence, and putting the wafers into a cleaning machine for cleaning process; and 4, drawing a line again on the same side of the flat opening (shown in figure 2) of the wafer after cleaning, and judging whether the product is feasible or not according to whether the line drawing position is on the same side or not. Therefore, when the scribing line is processed at a later station, the positive and negative crystal directions of the wafer can be confirmed according to whether the scribing line positions are on the same side, the product abnormity caused by crystal direction errors is avoided, and the yield of the product and the speed for detecting the positive and negative crystal directions of the wafer are improved.
It should be understood that the detailed description and specific examples, while indicating the invention, are given by way of illustration only, not by way of limitation, and all other embodiments obtained by those skilled in the art without making any inventive faculty are intended to be included within the scope of the invention.
Claims (3)
1. Method for distinguishing positive and negative crystal orientations of Si wafer, and method
S1: firstly, drawing a line on one side of a flat opening of a crystal bar by using a marking pen, recording the marking position, and judging the direction of a wafer according to the drawing position;
s2: after the crystal bar is cut, according to the mark of the drawn line, the wafer with the marked position is placed on the same side of the flat opening of the wafer, the direction of the wafer is confirmed to be consistent, and the positive and negative crystal directions of the wafer can be judged from the placing direction of the wafer;
s3: putting the placed wafers into a wafer basket in sequence, and putting the wafers into a cleaning machine for cleaning process;
s4: and drawing a line again on the same side of the flat opening of the wafer after cleaning, and judging whether the product is feasible according to whether the line drawing position is on the same side.
2. The method as claimed in claim 1, wherein the position of the mark S1 is a flat part of the ingot, and the positive and negative directions of the wafer are determined according to the position of the scribe line.
3. The method according to claim 1, wherein the marking position of S4 is a flat notch of the wafer, and the wafer orientation is determined according to whether the scribe line positions are on the same side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110212985.4A CN114975075A (en) | 2021-02-19 | 2021-02-19 | Method for distinguishing positive and negative crystal orientations of Si wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110212985.4A CN114975075A (en) | 2021-02-19 | 2021-02-19 | Method for distinguishing positive and negative crystal orientations of Si wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114975075A true CN114975075A (en) | 2022-08-30 |
Family
ID=82973635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110212985.4A Pending CN114975075A (en) | 2021-02-19 | 2021-02-19 | Method for distinguishing positive and negative crystal orientations of Si wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114975075A (en) |
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2021
- 2021-02-19 CN CN202110212985.4A patent/CN114975075A/en active Pending
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