CN114967366A - Multi-laser independent control-based multi-channel parallel direct-writing photoetching system and method - Google Patents

Multi-laser independent control-based multi-channel parallel direct-writing photoetching system and method Download PDF

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Publication number
CN114967366A
CN114967366A CN202210569066.7A CN202210569066A CN114967366A CN 114967366 A CN114967366 A CN 114967366A CN 202210569066 A CN202210569066 A CN 202210569066A CN 114967366 A CN114967366 A CN 114967366A
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China
Prior art keywords
optical fiber
channel
fiber array
light
laser
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CN202210569066.7A
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Chinese (zh)
Inventor
匡翠方
周国尊
刘旭
李海峰
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Zhejiang University ZJU
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Zhejiang University ZJU
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Priority to CN202210569066.7A priority Critical patent/CN114967366A/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams

Abstract

The invention discloses a multi-channel parallel direct-writing photoetching system and a method based on multi-laser independent control, which relate to the technical field of optics correlation and comprise a semiconductor laser group, a single-mode optical fiber group, an optical fiber array, an f-theta lens, an objective lens, a multi-channel control bus and a multi-channel arbitrary waveform generator; the semiconductor laser group is connected with the multichannel arbitrary waveform generator through the multichannel control bus; the semiconductor laser group is connected with the optical fiber array through the single-mode optical fiber group; the surface of the optical fiber array is arranged on the focal plane of the f-theta lens; the objective lens receives the light emitted by the f-theta lens and processes the light into a lattice light field; the invention uses a plurality of independent semiconductor lasers controlled by the multi-channel arbitrary waveform generator as the exciting light source, and directly adopts parallel signals to modulate the on-off and the intensity of the light source, thereby simplifying the structure of the direct-writing photoetching system and improving the processing efficiency of light beams.

Description

Multi-laser independent control-based multi-channel parallel direct-writing photoetching system and method
Technical Field
The invention relates to the technical field of optics correlation, in particular to a multi-channel parallel direct-writing photoetching system and a multi-laser independent control-based multi-channel parallel direct-writing photoetching method.
Background
Photolithography refers to a technique of transferring a pattern on a mask to a substrate with the aid of a photoresist (also called a photoresist) under the influence of light. The main process is as follows: firstly, irradiating ultraviolet light on the surface of a substrate attached with a layer of photoresist film through a mask plate to cause the photoresist in an exposure area to generate chemical reaction; dissolving and removing the photoresist (the former is called positive photoresist and the latter is called negative photoresist) of the exposed area or the unexposed area by a developing technology, so that the pattern on the mask is copied to the photoresist film; finally, the pattern is transferred to the substrate by using an etching technology.
Although the photolithography method of large-area exposure through a reticle has made the present large-scale integrated circuits highly efficient, direct-write lithography still has its irreplaceable advantages in some fields. For example, a photolithography method for performing large-area exposure through a reticle is only suitable for mass production of repetitive structures on a two-dimensional plane, while direct-write lithography can perform fine processing of arbitrary structures in a three-dimensional space, and the reticle fabrication of the reticle also needs to be performed by some kind of direct-write lithography.
The existing direct-write lithography technology needs not only two light beams of excitation light and inhibition light, but also a complex light beam processing device to obtain a lattice light field capable of completing the direct-write lithography; therefore, the existing direct-write lithography system is not only complex in structure and low in efficiency, and therefore, it is an urgent need for those skilled in the art to develop a direct-write lithography system with simple structure and fast response.
Disclosure of Invention
In view of the above, the present invention provides a multi-laser independent control based multi-channel parallel direct-write lithography system and method, which overcome the above-mentioned drawbacks.
In order to achieve the above purpose, the invention provides the following technical scheme:
a multi-channel parallel direct-writing photoetching system based on multi-laser independent control comprises a semiconductor laser group, a single-mode fiber group, a fiber array, an f-theta lens, an objective lens, a multi-channel control bus and a multi-channel arbitrary waveform generator; the semiconductor laser group is connected with the multichannel arbitrary waveform generator through the multichannel control bus; the semiconductor laser group is connected with the optical fiber array through the single-mode optical fiber group; the surface of the optical fiber array is arranged on the focal plane of the f-theta lens; the objective lens receives the light emitted by the f-theta lens and processes the light into a lattice light field.
Optionally, the objective lens is placed confocal with the f-theta lens.
Optionally, the optical fiber array is divided into a strip optical fiber array and a square optical fiber array.
Optionally, the scaling factor of the strip-shaped optical fiber array should be greater than D/λ, where D is the diameter of the optical fiber head; λ is the processing laser wavelength.
Optionally, the scaling factor of the square optical fiber array should be greater than 2D/λ, where D is the diameter of the optical fiber head; λ is the processing laser wavelength.
The method has the advantages that different zoom ratios are set for the optical fiber arrays in different arrangement forms, so that the whole projection surface has no light spot gap, and the scanning quality is ensured.
Optionally, the multi-channel arbitrary waveform generator is connected to the modulation signal interface of each semiconductor laser through a multi-channel control bus.
The multi-channel random waveform generator has the advantages that the on-off and the intensity of each semiconductor laser are controlled simultaneously through parallel control signals sent by the multi-channel random waveform generator, so that a light processing structure in a system is simplified, and the working efficiency is improved.
Optionally, the device further comprises a displacement table, wherein a sample table is arranged on the displacement table and used for bearing the optical cement sample.
A multi-channel parallel direct-writing photoetching method based on multi-laser independent control comprises the following specific steps:
the semiconductor laser group emits exciting light according to the received multi-channel high-frequency modulation signal;
exciting light is input into the f-theta lens through the optical fiber array and is modulated into parallel light;
and the parallel light is focused by the objective lens and converged on the photoresist sample to complete the multipoint direct writing photoetching.
According to the technical scheme, compared with the prior art, the multi-laser independent control-based multi-channel parallel direct-writing photoetching system and method are disclosed, the multiple independent semiconductor lasers controlled by the multi-channel arbitrary waveform generator are used as excitation light sources, and parallel signals are directly adopted to modulate the on-off and the intensity of the light sources, so that the structure of the direct-writing photoetching system is simplified, and the processing efficiency of light beams is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic diagram of the system of the present invention;
FIG. 2 is a schematic structural diagram of a stripe-shaped optical fiber array according to the present invention;
FIG. 3 is a schematic structural diagram of a square optical fiber array according to the present invention;
wherein, 1 is a semiconductor laser group; 2 is a single mode fiber group; 3 is an optical fiber array; 4 is f-theta lens; 5 is an objective lens; 6 is a sample stage; 7 is a high-precision displacement table; 8 is a multi-channel control bus; 9 is a multi-channel arbitrary waveform generator; and 10 is a master control computer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention discloses a multi-channel parallel direct-writing photoetching system and a method based on multi-laser independent control, and as shown in figure 1, the system comprises a semiconductor laser group 1, a single-mode fiber group 2, a fiber array 3, an f-theta lens 4, an objective lens 5, a multi-channel control bus 8 and a multi-channel arbitrary waveform generator 9; the semiconductor laser group 1 is N independent semiconductor lasers, and the single mode fiber group 2 is N single mode fibers; the multi-channel arbitrary waveform generator 9 is connected with the modulation signal interface of each semiconductor laser through a multi-channel control bus 8; the multi-channel arbitrary waveform generator 9 generates N-channel high-frequency modulation signals to control the switch output of the laser; the semiconductor laser group 1 is connected with the optical fiber array 3 through the single-mode optical fiber group 2; the surface of the optical fiber array 3 is arranged on the focal plane of the f-theta lens 4; the objective lens 5 receives the light emitted by the f-theta lens 4 and processes the light into a lattice light field; and the lattice light field acts on the photoresist sample to complete the multi-point direct writing photoetching.
In this embodiment, the system further comprises a main control computer 10 and a high-precision displacement stage 7, wherein the main control computer 10 generates a synchronization signal for controlling the movement of the high-precision displacement stage 7 and the output waveform of the multi-channel arbitrary waveform generator 9 according to a software program, so as to realize the overall control of the system and the multi-channel parallel direct-write lithography.
And a sample stage 6 is arranged on the high-precision displacement stage 7 and is used for bearing an optical cement sample.
In the present embodiment, the objective lens 5 is placed in confocal with the f- θ lens 4; the surface of the optical fiber array 3 and the objective lens 5 are imaged into a conjugate object image relationship.
In the present embodiment, the optical fiber array 3 is composed of a plurality of optical fibers arranged in a certain rule and a peripheral fixing frame. Only the cladding and the fiber core are reserved on the fixed fiber heads arranged in the array, the coating layer is removed, and the fiber heads are arranged in a manner that the cladding is attached tightly; the other end of the optical fiber in the optical fiber array 3 is reserved with a coating layer and a standard optical fiber interface for connecting with other optical fibers. The optical fiber array 3 is arranged in two types: a strip-shaped optical fiber array and a square optical fiber array;
the arrangement of the strip-shaped optical fiber array is shown in fig. 2, when the optical fiber array 3 is arranged in a strip shape, the scanning strategy of the platform is to firstly scan and move along the direction vertical to the arrangement of the optical fibers. After scanning a banded region, translating a fiber array projection width, and then scanning the next adjacent region. A two-dimensional plane can be covered by a plurality of areas scanned successively. If three-dimensional scanning is required, the platform moves along the axial direction after one plane is scanned, and the next plane is scanned.
When the processing laser wavelength is lambda, the diameter of the optical fiber head is D, and the diameter of the optical fiber output light spot is D, when projection scaling is not performed, D is far larger than D, and the scanning gap between two adjacent optical fibers during scanning is D/2-D. The large scanning gap does not guarantee that the entire plane is covered during scanning. After projection scaling, the minimum width of the spot image point is about λ/2, depending on the optical diffraction limit. Therefore, in order to ensure that the whole projection surface has no spot clearance after zooming, the zooming magnification should be larger than (D/2)/(lambda/2) ═ D/lambda.
The arrangement of the square optical fiber array is shown in fig. 3, when the optical fiber array 3 is arranged in the form of fig. 3, since the projection image plane of the optical fiber array 3 after projection can cover one plane, the moving strategy of the platform is to move to the lower adjacent area after one plane projection lithography is completed. The area-by-area projection covers the entire surface.
For the arrangement of fig. 3, the processing laser wavelength is λ, the fiber tip diameter is D, and the fiber output spot diameter is D. When the projection scaling is not carried out, D is far larger than D, and the scanning gap between two adjacent optical fibers is D-D during scanning. The large scanning gap does not guarantee that the entire plane is covered during scanning. After projection scaling, the minimum width of the spot image point is about λ/2, depending on the optical diffraction limit. In order to ensure that the whole projection surface has no spot clearance after zooming, the zooming magnification is larger than D/(lambda/2) to 2D/lambda.
The invention also discloses a multi-laser independent control-based multi-channel parallel direct-writing photoetching method, which comprises the following specific steps:
the semiconductor laser group 1 receives a multi-channel high-frequency modulation signal sent by a multi-channel arbitrary waveform generator 9; emitting exciting light of corresponding light beams according to the received multi-channel high-frequency modulation signal; exciting light is input into the optical fiber array 3 through N single-mode optical fibers; then the light is input into an f-theta lens 4 through an optical fiber array 3, and the f-theta lens 4 modulates exciting light to generate parallel light; the parallel light is focused and converged on the photoresist sample through the objective lens 5, the photoresist sample is carried to move by the high-precision displacement table 7 along with the sample table 6, and the high-precision displacement table 7 is controlled by the main control computer 10, so that the multipoint direct writing photoetching is completed.
The invention uses a plurality of independent semiconductor lasers controlled by the multi-channel arbitrary waveform generator 9 as the exciting light source, and directly adopts parallel signals to modulate the on-off and the intensity of the light source, thereby simplifying the structure of the direct-writing photoetching system and improving the processing efficiency of light beams.
In the present specification, the embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (8)

1. A multi-channel parallel direct-writing photoetching system based on multi-laser independent control is characterized by comprising a semiconductor laser group (1), a single-mode optical fiber group (2), an optical fiber array (3), an f-theta lens (4), an objective lens (5), a multi-channel control bus (8) and a multi-channel arbitrary waveform generator (9); the semiconductor laser group (1) is connected with the multichannel arbitrary waveform generator (9) through the multichannel control bus (8); the semiconductor laser group (1) is connected with the optical fiber array (3) through the single-mode optical fiber group (2); the surface of the optical fiber array (3) is arranged on the focal plane of the f-theta lens (4); the objective lens (5) receives the light emitted by the f-theta lens (4) and processes the light into a lattice light field.
2. A multi-laser independent control based multi-channel parallel direct write lithography system according to claim 1, characterized in that the objective lens (5) is placed confocal with the f-theta lens (4).
3. A multi-laser independent control based multi-channel parallel direct write lithography system according to claim 1, characterized in that the optical fiber array (3) is divided into a strip optical fiber array and a square optical fiber array.
4. The multi-laser independent control based multi-channel parallel direct-writing lithography system according to claim 3, wherein the scaling factor of the strip-shaped optical fiber array is greater than D/λ, wherein D is the diameter of the optical fiber head; λ is the processing laser wavelength.
5. The multi-laser independent control-based multi-channel parallel direct-writing lithography system according to claim 3, wherein the scaling factor of the square optical fiber array is greater than 2D/λ, where D is the diameter of the optical fiber head; λ is the processing laser wavelength.
6. A multi-channel parallel direct-write lithography system based on multi-laser independent control according to claim 1, characterized in that the multi-channel arbitrary waveform generator (9) is connected to the modulation signal interface of each semiconductor laser through a multi-channel control bus (8).
7. The multi-laser independent control-based multi-channel parallel direct-writing lithography system according to claim 1, further comprising a displacement table, wherein a sample table (6) is disposed on the displacement table, and the sample table (6) is used for bearing an optical cement sample.
8. A multi-channel parallel direct-writing photoetching method based on multi-laser independent control is characterized by comprising the following specific steps:
the semiconductor laser group (1) emits exciting light according to the received multi-channel high-frequency modulation signal;
excitation light is input into the f-theta lens (4) through the optical fiber array (3) and is modulated into parallel light;
the parallel light is focused and converged on the photoresist sample through the objective lens (5) to complete the multipoint direct writing photoetching.
CN202210569066.7A 2022-05-24 2022-05-24 Multi-laser independent control-based multi-channel parallel direct-writing photoetching system and method Pending CN114967366A (en)

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Application Number Priority Date Filing Date Title
CN202210569066.7A CN114967366A (en) 2022-05-24 2022-05-24 Multi-laser independent control-based multi-channel parallel direct-writing photoetching system and method

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CN114967366A true CN114967366A (en) 2022-08-30

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