CN114959654A - Wafer bearing disc and thin film deposition device applying same - Google Patents

Wafer bearing disc and thin film deposition device applying same Download PDF

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Publication number
CN114959654A
CN114959654A CN202110215635.3A CN202110215635A CN114959654A CN 114959654 A CN114959654 A CN 114959654A CN 202110215635 A CN202110215635 A CN 202110215635A CN 114959654 A CN114959654 A CN 114959654A
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China
Prior art keywords
wafer
unit
heating
heating coil
conductive
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Granted
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CN202110215635.3A
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Chinese (zh)
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CN114959654B (en
Inventor
林俊成
王俊富
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Xintianhong Xiamen Technology Co ltd
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Xintianhong Xiamen Technology Co ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Abstract

The invention relates to a wafer bearing disc, which mainly comprises a heating unit, an insulating heat conduction unit and a conductive part, wherein the insulating heat conduction unit is positioned between the conductive part and the heating unit. The wafer carrying tray is used for carrying at least one wafer, wherein the conductive part is closer to the wafer than the heating unit. An alternating bias voltage may be formed on the conductive portion during deposition to attract plasma above the conductive portion. The heating unit comprises at least one heating coil, wherein the heating coil heats the wafer carried by the wafer carrying disc through the insulating heat conduction unit and the electric conduction part. The insulating heat conduction unit electrically isolates the heating unit and the conductive part to prevent the alternating current on the heating coil and the alternating bias of the conductive part from being conducted with each other, so that the wafer bearing disc can generate stable alternating bias and temperature, and a uniform film can be formed on the surface of a wafer borne by the wafer bearing disc.

Description

Wafer bearing disc and thin film deposition device applying same
Technical Field
The invention relates to a wafer bearing disc, in particular to a film deposition device applying the wafer bearing disc, which mainly electrically isolates a heating unit and a conductive part through an insulating and heat-conducting unit so as to prevent the current of a heating coil from being mutually conducted with the alternating bias voltage of the conductive part and be beneficial to forming a uniform film on the surface of a wafer borne by the wafer bearing disc.
Background
Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), and Atomic Layer Deposition (ALD) are commonly used thin film deposition equipment and are commonly used in integrated circuit, led, display, and other processes.
The deposition apparatus mainly includes a chamber and a wafer carrier, wherein the wafer carrier is located in the chamber and is used for carrying at least one wafer. For example, in physical vapor deposition, a target is disposed in the chamber, wherein the target faces the wafer on the wafer carrier. During physical vapor deposition, inert gas and/or reactive gas can be delivered into the chamber and bias voltages can be applied to the target and the wafer carrier, respectively, wherein the wafer carrier also heats the loaded wafer. The inert gas in the cavity forms ionized inert gas under the action of the high-voltage electric field. The ionized inert gas is attracted by the bias on the target to bombard the target. Target atoms or molecules sputtered from the target are attracted by the bias on the wafer carrier plate and deposit on the surface of the heated wafer to form a film on the surface of the wafer.
In addition, when performing chemical vapor deposition and atomic layer deposition, it may also be necessary to heat the wafer carrying tray and provide bias voltage to the wafer carrying tray, so as to form a thin film with uniform thickness on the surface of the wafer carried by the wafer carrying tray.
Disclosure of Invention
As described in the prior art, it is often necessary to provide an ac bias to the wafer carrier and heat the wafer carrier through a heating coil to improve the uniformity of the thin film deposited on the wafer surface during the deposition process. However, the ac current on the heating coil may be conducted to the ac bias on the wafer carrier, which causes the ac bias on the wafer carrier to be unstable, and thus causes the film deposited on the wafer surface to have a non-uniform thickness. In order to avoid the above-mentioned situation, the present invention provides a novel wafer carrying tray, which mainly uses an insulation heat conduction unit to electrically isolate the heating coil and the conductive part on the wafer carrying tray, so as to prevent the alternating current on the heating coil from interfering the alternating current bias on the conductive part, so that the wafer carrying tray can form a stable alternating current bias, and the uniformity of the thin film formed on the surface of the wafer can be improved.
The present invention provides a wafer carrier, which mainly includes a heating unit, an insulating and heat-conducting unit and a conductive part, wherein the insulating and conductive part is located between the heating unit and the conductive part and electrically isolates the heating unit and the conductive part. Through the arrangement of the insulating conductive part, the interference caused by the mutual conduction of the alternating current on the heating coil of the heating unit and the alternating bias on the conductive part can be avoided, so that the stable alternating bias can be formed on the conductive part. In addition, the heating unit can still transmit heat to the conductive part through the insulated conductive part and heat the wafer carried by the wafer carrying disc.
The present invention provides a wafer carrier, which mainly includes a heating unit, an insulating and heat-conducting unit, a conductive portion, a base and a fixing base, wherein the insulating and heat-conducting unit is located between the heating unit and the conductive portion, and the fixing base is connected to the heating unit through the base. The base comprises a plurality of annular connecting pieces with different radiuses, wherein the upper surface and the lower surface of the annular connecting piece closest to the inner side are respectively provided with an O-ring, so that the upper surface and the lower surface of the annular connecting piece are respectively connected with the heating unit and the fixed seat through the O-rings.
In addition, a cooling channel can be further arranged between the O-ring of the annular connecting piece and the adjacent heating unit and/or heating coil to reduce the temperature of the O-ring closer to the heating unit and prevent the O-ring from being degraded under the high-temperature environment for a long time.
One objective of the present invention is to provide a wafer supporting plate, wherein a heating unit of the wafer supporting plate includes a plurality of heating coils, and each of the heating coils is used for heating a different region of the wafer supporting plate. In addition, the current transmitted to each heating coil can be respectively controlled in the heating process so as to adjust the temperature of different areas of the wafer bearing disc in a partition mode, and the surface of the wafer bearing disc bearing the wafer can generate uniform temperature.
In addition, at least one temperature sensing unit can be respectively arranged in different areas of the wafer bearing plate, and the temperatures of different areas on the wafer bearing plate can be respectively measured by the different temperature sensing units. The heating coils are used for heating in a partition mode, and the temperature sensing units are used for measuring the temperature in a partition mode, so that the temperature of each area of the wafer bearing disc can be adjusted accurately in real time.
In order to achieve the above object, the present invention provides a wafer carrying tray for carrying at least one wafer, comprising: at least one heating unit comprising at least one heating coil for heating the wafer carried by the wafer carrying tray; an insulating heat conducting unit arranged on the heating unit; and a conductive part arranged on the insulated heat conduction unit and electrically connected with a bias power supply, wherein the insulated heat conduction unit is positioned between the heating unit and the conductive part and electrically isolates the heating unit and the conductive part.
The present invention provides another thin film deposition apparatus, comprising: a cavity body which comprises an accommodating space; a wafer carrier, located in the accommodating space and used for carrying at least one wafer, comprising: at least one heating unit comprising at least one heating coil for heating the wafer carried by the wafer carrying tray; a conductive part located above the heating unit and electrically connected with a bias power supply, wherein the bias power supply is used for forming a bias on the conductive part; and an insulating heat conduction unit located between the heating unit and the conductive part and used for isolating the heating unit and the conductive part; and at least one air inlet which is in fluid connection with the accommodating space of the cavity and is used for conveying a process gas to the accommodating space.
The wafer bearing plate is characterized in that the heating coil comprises a first heating coil and a second heating coil, and the second heating coil is located on the periphery of the first heating coil.
The wafer bearing disc comprises a plurality of temperature sensing units, the first heating coil and the second heating coil are respectively used for heating a first area and a second area of the wafer bearing disc, and the temperature of the first area and the temperature of the second area of the wafer bearing disc are respectively measured through the temperature sensing units.
The wafer bearing disc and the film deposition device comprise a supporting piece connected with the wafer bearing disc, wherein at least one first conductive unit is arranged in the supporting piece and is electrically connected with a bias power supply and a conductive part, and the bias power supply forms a bias voltage on the conductive part through the first conductive unit.
In the wafer carrying tray, the bias power supply is an alternating current power supply, and an alternating current bias is formed on the conductive part through the conductive unit.
The wafer bearing disc comprises at least one second conductive unit which is positioned in the supporting piece and is electrically connected with the heating coil.
The thin film deposition device comprises at least one second conductive unit positioned in the support and electrically connected with the heating coil, wherein the heating coil comprises a first heating coil and a second heating coil, and the second heating coil is positioned on the periphery of the first heating coil.
The film deposition device comprises a driving unit connected with a support piece, and drives the wafer bearing disc to move through the support piece.
Drawings
FIG. 1 is a cross-sectional view of a wafer carrier according to one embodiment of the present invention.
FIGS. 2 and 3 are schematic cross-sectional views illustrating a thin film deposition apparatus using a wafer carrier according to an embodiment of the present invention.
Description of reference numerals: 10-a wafer carrier; 11-a heating unit; 115-a cooling channel; 12-a wafer; 13-an insulating heat conducting unit; 14-a heating coil; 141-a first heating coil; 143-a second heating coil; 15-a conductive portion; 161-a base; 1611-a first annular connector; 1612 — a first annular seal; 1613 — a second annular connection; 1614 — a second annular seal; 1615-a third annular connector; 1617-an annular protrusion; 163-a holder; 1631-an annular projection; 17-a support; 171-a first conductive element; 173-a second conductive element; 175-bias power supply; 177-a first temperature sensing unit; 179 — second temperature sensing unit; 20-a thin film deposition device; 21-a cavity; 211-gas inlet; 212-feed and discharge ports; 213-a top plate; 215-lower cavity; 217-insulation part; 24-a target material; 25-a ring member; 26-an accommodating space; 261-a reaction space; 27-a stopper; 271-an annular flange; 28-a drive unit; 29-cover ring; a1 — first region; a2 — second area.
Detailed Description
Fig. 1 is a cross-sectional view of a wafer carrier according to an embodiment of the invention. As shown in the figure, the wafer carrier 10 is used for carrying at least one wafer 12, and mainly includes at least one heating unit 11, an insulating and heat-conducting unit 13, and a conductive portion 15, wherein the heating unit 11, the insulating and heat-conducting unit 13, and the conductive portion 15 may be in a shape of a disk.
The heating unit 11, the insulating and heat-conducting unit 13 and the conductive portion 15 are stacked, wherein the conductive portion 15 is closest to the wafer 12 carried by the wafer carrier 10, and the heating unit 11 is farthest from the wafer 12. The insulating and heat conducting unit 13 is located between the heating unit 11 and the conductive part 15, and electrically isolates the heating unit 11 from the conductive part 15.
The heating unit 11 includes at least one heating coil 14, and when in use, an alternating current is inputted into the heating coil 14, so that the heating coil 14 generates an induction magnetic field and heats the wafer carrier 10 via the induction magnetic field. In one embodiment of the present invention, the wafer carrier 10, the heating unit 11 or the conductive portion 15 may be provided with a conductive layer (not shown), such as a metal layer, adjacent to the heating coil 14, wherein the induced magnetic field generated by the heating coil 14 forms an eddy current on the conductive layer, and the eddy current reacts with the resistance of the conductive layer, so that the conductive layer and/or the heating unit 11 generates heat to heat the wafer 12 carried by the wafer carrier 10.
The insulating and heat conducting unit 13 is located on the heating unit 11, and the conductive portion 15 is disposed on the insulating and heat conducting unit 13, wherein the conductive portion 15 is closest to or directly contacts the wafer 12 carried by the wafer carrier 10. In practical applications, the conductive portion 15 is electrically connected to a bias power source 175, and a bias voltage is formed on the conductive portion 15 by the bias power source 175. The bias power source 175 may be an ac power source or a dc power source, and is used to form an ac bias or a dc bias on the conductive portion 15.
The bias on the conductive portion 15 is used to attract the plasma above the wafer carrier 10 and the wafer 12, so as to deposit a film on the surface of the wafer 12. Specifically, the conductive portion 15 may be a metal and is used to carry at least one wafer 12, for example, the conductive portion 15 may be a titanium plate.
The insulating and heat conducting unit 13 is disposed on the heating unit 11 and located between the heating unit 11 and the conductive part 15, wherein the insulating and heat conducting unit 13 is literally a material having heat conducting and insulating properties, such as alumina.
When the insulated conductive portions 13 are not provided, the ac current on the heating coil 14 may be transmitted to the conductive portions 15, and the magnitude of the bias voltage on the conductive portions 15 may be affected, so that the bias voltage power supply 175 cannot form a stable ac bias voltage or a stable dc bias voltage on the conductive portions 15. Thus, the conductive portion 15 cannot stably attract plasma above the wafer 12, and it is not favorable for forming a thin film with a uniform thickness on the surface of the wafer 12.
In order to solve the above problems, the present invention proposes to dispose the insulating and heat conducting unit 13 between the heating unit 11 and the conductive part 15, and to electrically isolate the heating unit 11 and the conductive part 15 through the disposition of the insulating and heat conducting unit 13. The alternating current on the heating coil 14 of the heating unit 11 cannot pass through the insulating and heat conducting unit 13 and cannot be transmitted to the conductive portion 15, so that the bias power supply 175 can form a stable direct current bias or alternating current bias on the conductive portion 15 to stably attract the plasma above the wafer 12, which is beneficial to forming a thin film with a uniform thickness on the surface of the wafer 12.
In one embodiment of the present invention, when the bias power supply 175 provides a 70V bias voltage to the conductive portions 15, if the interference of the heating coil 14 on the conductive portions 15 is not isolated, the bias power supply 175 may not form a 70V bias voltage on the conductive portions 15, and even if the bias power supply 175 can form a sufficient bias voltage on the conductive portions 15, the bias voltage of the conductive portions 15 may fluctuate in the 20V interval, so that the bias voltage on the conductive portions 15 is unstable. On the contrary, if the insulating and heat conducting unit 13 is disposed between the conductive portion 15 and the heating unit 11, the bias power source 175 may form a bias voltage of 70V on the conductive portion 15, wherein the fluctuation range of the bias voltage on the conductive portion 15 may be less than 10V, so that the conductive portion 15 has a stable bias voltage.
Specifically, the insulating and heat conducting unit 13 can also prevent the dc bias or ac bias on the conducting portion 15 from affecting the ac current of the heating coil 14, so that the heating coil 14 can stably control the temperature of the wafer carrier 10 and the carried wafer 12, thereby improving the quality of the thin film deposition.
The insulating and heat conducting unit 13 has a heat conducting property, such that the heat generated by the heating unit 11 can be conducted to the conductive portion 15 through the insulating and heat conducting unit 13, and the temperature of the wafer 12 carried by the wafer carrier 10 is increased through the high conductive portion 15.
The wafer carrier 10 is connected to a support member 17, and is connected to the wafer carrier 10 through the support member 17. In an embodiment of the invention, at least one first conductive unit 171 may be disposed in the supporting member 17, wherein the first conductive unit 171 is electrically connected to the conductive portion 15 and the bias power source 175, and can transmit the ac bias or the dc bias provided by the bias power source 175 to the conductive portion 15.
In addition, at least one second conductive unit 173 may be disposed in the supporting member 17, wherein the second conductive unit 173 is electrically connected to the heating coil 14. In practice, an alternating current may be transmitted to the heating coil 14 through the second conductive unit 173 to increase the temperature of the heating unit 11.
In an embodiment of the present invention, the heating coil 14 of the heating unit 11 includes a first heating coil 141 and a second heating coil 143, wherein the second heating coil 143 is located at the periphery of the first heating coil 141. In addition, the first heating coil 141 and the second heating coil 143 may be connected to different second conductive units 173, and may provide alternating currents of different magnitudes and/or frequencies to the first heating coil 141 and the second heating coil 143, respectively, so as to adjust the temperature of the heating unit 11 in a divisional manner.
Specifically, the first heating coil 141 and the second heating coil 143 may be used to heat and/or adjust the temperature of the heating unit 11, the conductive portion 15, and/or a first region a1 and a second region a2 of the wafer carrier 10, such as the first region a1 located at the inner periphery or near the center of the heating unit 11, the conductive portion 15, and/or the wafer carrier 10, and the second region a2 located at the outer periphery of the heating unit 11, the conductive portion 15, and/or the wafer carrier 10, respectively.
The wafer carrier 10 includes a plurality of temperature sensing units 177/179, such as at least one first temperature sensing unit 177 and at least one second temperature sensing unit 179 for measuring the temperature of the heating unit 11, the conductive portion 15, and/or the first region A1 and the second region A2 of the wafer carrier 10, respectively.
The temperatures of the heating unit 11, the conductive part 15 and/or the wafer tray 10 in different regions are measured by the first temperature sensing unit 177 and the second temperature sensing unit 179, respectively, and the temperatures of the heating unit 11, the conductive part 15 and/or the wafer tray 10 in different regions are adjusted by changing the current supplied to the first heating coil 141 and the second heating coil 143, so that the same or similar temperatures can be generated in the heating unit 11, the conductive part 15 and/or the wafer tray 10 in each region.
In one embodiment of the present invention, the wafer carrier 10 may include at least a base 161 and a fixing base 163, wherein the base 161 is connected to the heating unit 11, and the fixing base 163 is used for supporting and fixing the base 161.
Specifically, the base 161 may include a plurality of ring connectors, such as a first ring connector 1611, a second ring connector 1613, and a third ring connector 1615, wherein the support 17 is located within the opening of the first ring connector 1611, the first ring connector 1611 is located within the opening of the second ring connector 1613, and the second ring connector 1613 is located within the opening of the third ring connector 1615. In other words, the base 161 is formed by the combination of the first ring connector 1611, the second ring connector 1613 and the third ring connector 1615. Of course, the base 161 including three connecting members 1611/1613/1615 is only one embodiment of the present invention and is not intended to limit the scope of the present invention.
In one embodiment of the present invention, the edge of the base 161 has an annular protrusion 1617, wherein a radially inner region of the annular protrusion 1617 forms a recess, and the heating unit 11 can be placed in the recess of the base 161, and the annular protrusion 1617 is located around the heating unit 11.
The fixing base 163 may be a single component, and the edge of the fixing base 163 is provided with an annular protrusion 1631, wherein a radial inner region of the annular protrusion 1631 of the fixing base 163 may form a groove, and the base 161 may be disposed in the groove of the fixing base 163, so that the annular protrusion 1631 of the fixing base 163 is located around the base 161.
In an embodiment of the present invention, the upper surface and the lower surface of the first annular connector 1611 of the base 161 closest to the inner ring may be respectively provided with a first annular seal 1612 and a second annular seal 1614, such as O-rings, wherein the first annular seal 1612 on the upper surface of the first annular connector 1611 contacts the heating unit 11, and the second annular seal 1614 on the lower surface of the first annular connector 1611 contacts the fixing seat 163. In practical applications, the heating unit 11 and the fixing base 163 are tightly attached to the base 161 and/or the first annular connector 1611 due to the pressure difference between the areas.
The first annular seal 1612 on the upper surface of the first annular connector 1611 may be in closer proximity to or in direct contact with the heating unit 11, which may cause the first annular seal 1612 to degrade over time. To prevent the first annular seal 1612 from being degraded, at least one cooling channel 115 may be further disposed above the first annular seal 1612 to separate the heating unit 11 from the first annular seal 1612 through the cooling channel 115 to cool the first annular seal 1612.
FIG. 2 is a schematic cross-sectional view of a thin film deposition apparatus using a wafer carrier according to an embodiment of the present invention. As shown in the figure, the thin film deposition apparatus 20 mainly includes at least one wafer carrying tray 10 and a chamber 21, wherein the chamber 21 includes an accommodating space 26, and the wafer carrying tray 10 is located in the accommodating space 26 and is used for carrying at least one wafer 12.
In one embodiment of the present invention, the thin film deposition apparatus 20 may be a physical vapor deposition apparatus, and a target 24 is disposed in the chamber 21, wherein the target 24 faces the wafer susceptor 10 and/or the wafer 12. In one embodiment, the chamber 21 may include a top plate 213 and a lower chamber 215, wherein the top plate 213 is connected to the lower chamber 215 through an insulating portion 217 to form the receiving space 26 therebetween, and the target 24 is disposed on the top plate 213 and faces the wafer carrier 10 and/or the wafer 12.
The chamber 21 is provided with at least one gas inlet 211, wherein the gas inlet 211 is fluidly connected to the accommodating space 26 of the chamber 21 and is used for delivering a process gas into the accommodating space 26 for performing a deposition process, for example, the process gas may be an inert gas or a reactive gas. In addition, an air-pumping port can be disposed on the chamber 21, and the air in the chamber 21 can be pumped out through the air-pumping port by a pump.
The ring member 25 is disposed on the wafer carrier 10 and around the wafers 12. The stopper 27 is disposed in the receiving space 26 of the chamber 21 and located in the peripheral region of the wafer tray 10. Specifically, one end of the stopper 27 is connected to the cavity 21, and the other end forms an opening. In an embodiment of the present invention, an end of the stopper 27 not connected to the cavity 21 may form an annular flange 271, wherein the annular flange 271 is located around the opening of the stopper 27, and the cover ring 29 may be disposed on the annular flange 271 of the stopper 27.
The chamber 21 may include a feed/discharge port 212 for transporting the wafer 12. The driving unit 28 can be connected to the supporting member 17 and drive the wafer carrier 10 away from the stoppers 27 via the supporting member 17, as shown in fig. 2. The wafer 12 can then be placed on the wafer carrier 10 through the inlet/outlet 212 by a robot arm, and the robot arm can also take the wafer 12 carried by the wafer carrier 10 out of the cavity 21 through the inlet/outlet 212.
After the robot arm places the wafer 12 on the wafer carrier 10, the driving unit 28 can drive the wafer carrier 10 and the wafer 12 to move toward the stoppers 27 through the supporting members 17, such that the ring-shaped members 25 on the wafer carrier 10 contact the cover rings 29 on the stoppers 27, and the stoppers 27 and the cover rings 29 are disposed around the wafer 12, as shown in fig. 3. The stopper 27, the cover ring 39, the wafer carrier 10, the wafer 12 and/or the ring member 25 divide the receiving space 26 of the chamber 21 into two parts, wherein the space between the stopper 27, the cover ring 29, the wafer carrier 10, the ring member 25 and/or the chamber 21 can be defined as a reaction space 261, and the target 24 and the wafer 12 are located in the reaction space 261.
During deposition, the heating unit 11 of the wafer carrier 10 heats the wafer 12 and biases the top plate 213 and the wafer carrier 10, respectively, wherein the inert gas in the reaction space 261 forms ionized inert gas under the action of the high voltage electric field. The ionized inert gas is attracted by the bias on the target 24 to bombard the target 24, and target atoms or molecules sputtered from the target 24 are attracted by the bias on the wafer carrier 10 to deposit on the surface of the wafer 12.
Referring to fig. 1, the heating unit 11 and the conductive part 15 of the wafer carrier 10 are isolated by the insulating and heat conducting unit 13, wherein the alternating current of the heating coil 14 of the heating unit 11 is not transmitted to the conductive part 15, so that the conductive part 15 can form a stable alternating current bias or direct current bias, and the quality of the film deposited on the surface of the wafer 12 can be improved.
In the embodiment of the present invention, a pvd apparatus is used as an embodiment of the invention, but the pvd apparatus is not limited by the scope of the claims of the invention, and the wafer carrier 10 of the invention can also be applied to a cvd apparatus or an ald apparatus in practical applications, and basically, the wafer carrier 10 of the invention is applied as long as the wafer carrier 10 of the cvd apparatus needs to be heated and biased.
The above description is only one preferred embodiment of the present invention, and should not be taken as limiting the scope of the invention, which is defined by the appended claims, and all changes and modifications that are equivalent to the shape, structure, characteristics and spirit of the invention are intended to be included therein.

Claims (10)

1. A wafer carrying tray for carrying at least one wafer, comprising:
at least one heating unit comprising at least one heating coil for heating the wafer carried by the wafer carrying tray;
the insulating heat conduction unit is arranged on the heating unit; and
and the conductive part is arranged on the insulated heat conduction unit and is electrically connected with a bias power supply, wherein the insulated heat conduction unit is positioned between the heating unit and the conductive part and electrically isolates the heating unit and the conductive part.
2. The wafer carrier tray of claim 1, wherein the heating coil comprises a first heating coil and a second heating coil, wherein the second heating coil is located around the first heating coil.
3. The wafer carrier as claimed in claim 2, comprising a plurality of temperature sensing units, wherein the first heating coil and the second heating coil are respectively used for heating a first region and a second region of the wafer carrier, and the temperature of the first region and the second region of the wafer carrier is respectively measured by the temperature sensing units.
4. The wafer carrier of claim 1, comprising a support member coupled to the wafer carrier, at least a first conductive element disposed in the support member and electrically coupled to the bias power source and the conductive portion, wherein the bias power source forms a bias voltage on the conductive portion via the first conductive element.
5. The wafer carrier as recited in claim 4, wherein the bias power source is an AC power source and an AC bias is formed on the conductive portion through the conductive unit.
6. The wafer carrier of claim 4, comprising at least one second conductive element disposed within the support member and electrically connected to the heating coil.
7. A thin film deposition apparatus, comprising:
a cavity body which comprises an accommodating space;
a wafer carrying tray located in the accommodating space and used for carrying at least one wafer, comprising:
at least one heating unit comprising at least one heating coil for heating the wafer carried by the wafer carrying tray;
the conductive part is positioned above the heating unit and is electrically connected with a bias power supply, wherein the bias power supply is used for forming a bias voltage on the conductive part; and
the insulating heat conduction unit is positioned between the heating unit and the conductive part and is used for insulating the heating unit and the conductive part; and
and the at least one air inlet is in fluid connection with the accommodating space of the cavity and is used for conveying a process gas to the accommodating space.
8. The thin film deposition apparatus as claimed in claim 7, wherein a support is coupled to the wafer carrier, at least a first conductive unit is disposed in the support and electrically coupled to the bias power source and the conductive portion, and the bias power source forms the bias voltage at the conductive portion through the first conductive unit.
9. The thin film deposition apparatus as claimed in claim 8, wherein at least a second conductive unit is disposed in the support member and electrically connected to the heating coil, and the heating coil includes a first heating coil and a second heating coil disposed at a periphery of the first heating coil.
10. The apparatus of claim 7, further comprising a driving unit coupled to the support member and configured to drive the wafer carrier to move through the support member.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991002105A1 (en) * 1989-08-11 1991-02-21 Thomson Tubes Electroniques Device for depositing a material on a heat-conducting substrate
CN101093811A (en) * 2006-04-27 2007-12-26 应用材料股份有限公司 Substrate support with electrostatic chuck having dual temperature zones
US20120090784A1 (en) * 2010-10-19 2012-04-19 Applied Materials, Inc. Chamber lid heater ring assembly
CN105474382A (en) * 2014-02-07 2016-04-06 应用材料公司 Pixelated temperature controlled substrate support assembly
JP2019071350A (en) * 2017-10-10 2019-05-09 住友電気工業株式会社 Heater unit for wafer heating
CN215481237U (en) * 2021-02-26 2022-01-11 鑫天虹(厦门)科技有限公司 Wafer bearing disc and thin film deposition device applying same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991002105A1 (en) * 1989-08-11 1991-02-21 Thomson Tubes Electroniques Device for depositing a material on a heat-conducting substrate
CN101093811A (en) * 2006-04-27 2007-12-26 应用材料股份有限公司 Substrate support with electrostatic chuck having dual temperature zones
US20120090784A1 (en) * 2010-10-19 2012-04-19 Applied Materials, Inc. Chamber lid heater ring assembly
CN105474382A (en) * 2014-02-07 2016-04-06 应用材料公司 Pixelated temperature controlled substrate support assembly
JP2019071350A (en) * 2017-10-10 2019-05-09 住友電気工業株式会社 Heater unit for wafer heating
CN215481237U (en) * 2021-02-26 2022-01-11 鑫天虹(厦门)科技有限公司 Wafer bearing disc and thin film deposition device applying same

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