CN114959534A - Structure for uniformly coating low-melting-point metal on surface of superfine copper wire - Google Patents
Structure for uniformly coating low-melting-point metal on surface of superfine copper wire Download PDFInfo
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- CN114959534A CN114959534A CN202210591683.7A CN202210591683A CN114959534A CN 114959534 A CN114959534 A CN 114959534A CN 202210591683 A CN202210591683 A CN 202210591683A CN 114959534 A CN114959534 A CN 114959534A
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- Prior art keywords
- copper wire
- melting
- point metal
- low
- pipe
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Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 65
- 239000002184 metal Substances 0.000 title claims abstract description 65
- 239000011248 coating agent Substances 0.000 title claims abstract description 42
- 238000000576 coating method Methods 0.000 title claims abstract description 42
- 230000005540 biological transmission Effects 0.000 claims abstract description 57
- 239000000463 material Substances 0.000 claims abstract description 46
- 238000009413 insulation Methods 0.000 claims abstract description 27
- 238000007790 scraping Methods 0.000 claims abstract description 16
- 238000002156 mixing Methods 0.000 claims description 45
- 239000002994 raw material Substances 0.000 claims description 29
- 239000002002 slurry Substances 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 22
- 238000002844 melting Methods 0.000 claims description 14
- 238000012546 transfer Methods 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- 230000008018 melting Effects 0.000 claims description 11
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 26
- 238000000034 method Methods 0.000 abstract description 10
- 239000007788 liquid Substances 0.000 abstract description 8
- 238000009833 condensation Methods 0.000 abstract description 7
- 230000005494 condensation Effects 0.000 abstract description 7
- 239000006255 coating slurry Substances 0.000 abstract description 6
- 238000005253 cladding Methods 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 5
- 239000011247 coating layer Substances 0.000 abstract description 3
- 238000001816 cooling Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 238000004064 recycling Methods 0.000 abstract description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 239000003365 glass fiber Substances 0.000 description 7
- 238000003466 welding Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- -1 tin-bismuth-silver-germanium Chemical compound 0.000 description 3
- 229910000978 Pb alloy Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- QKAJPFXKNNXMIZ-UHFFFAOYSA-N [Bi].[Ag].[Sn] Chemical compound [Bi].[Ag].[Sn] QKAJPFXKNNXMIZ-UHFFFAOYSA-N 0.000 description 1
- KHZAWAWPXXNLGB-UHFFFAOYSA-N [Bi].[Pb].[Sn] Chemical compound [Bi].[Pb].[Sn] KHZAWAWPXXNLGB-UHFFFAOYSA-N 0.000 description 1
- LBFKBYSVICSFQW-UHFFFAOYSA-N [In][Sn][Pb][Bi] Chemical compound [In][Sn][Pb][Bi] LBFKBYSVICSFQW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- UDRRLPGVCZOTQW-UHFFFAOYSA-N bismuth lead Chemical compound [Pb].[Bi] UDRRLPGVCZOTQW-UHFFFAOYSA-N 0.000 description 1
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 239000011140 metalized polyester Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007581 slurry coating method Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/003—Apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/14—Removing excess of molten coatings; Controlling or regulating the coating thickness
- C23C2/22—Removing excess of molten coatings; Controlling or regulating the coating thickness by rubbing, e.g. using knives, e.g. rubbing solids
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/26—After-treatment
- C23C2/28—Thermal after-treatment, e.g. treatment in oil bath
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/34—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor characterised by the shape of the material to be treated
- C23C2/36—Elongated material
- C23C2/38—Wires; Tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/04—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor characterised by the coating material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/04—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor characterised by the coating material
- C23C2/08—Tin or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
- C23C2/04—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor characterised by the coating material
- C23C2/10—Lead or alloys based thereon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a structure for uniformly coating low-melting-point metal on the surface of an ultrafine copper wire, which comprises a first transmission pipe, a second transmission pipe, a condensation pipe and a heat insulation layer, wherein the low-melting-point metal is arranged in the second transmission pipe in a molten state; the condensing pipe is sleeved on the outer wall of the first transmission pipe; the heat insulation layer is arranged between the first transmission pipe and the second transmission pipe, and the heat insulation layer is provided with a material scraping hole. According to the invention, the condenser pipe is adopted, so that the coated copper wire can be rapidly solidified, the coated copper wire can be prevented from falling off by coating slurry in the process of slowly cooling in an external environment, and the coating is not uniform due to external factors, and the coating efficiency is improved; the excessive coating slurry on the surface of the copper wire can be scraped through the heat insulation layer and the upper scraping hole thereof, so that the thickness and the shape of the coating layer of the copper wire are unified; the setting of surplus silo can be collected the unnecessary cladding thick liquids that the insulating layer was scraped, accomplishes recycling under the effect of mechanical pump, avoids the thick liquids extravagant.
Description
Technical Field
The invention relates to the technical field of packaging of crystalline silicon heterojunction solar cell photovoltaic modules, in particular to a structure for uniformly coating low-melting-point metal on the surface of an extremely fine copper wire.
Background
With the development of social economy, the traditional energy is gradually exhausted, novel renewable clean energy becomes the development trend of the current energy technology, the solar power generation has increased day by day, and the photovoltaic power generation is used as a main solar power generation mode and is supported by a high-efficiency solar battery. The crystalline silicon heterojunction solar cell has high efficiency production steps and is a new generation of silicon-based cell, but the cell carrier collection and interconnection in a photovoltaic module are generally welded through a silver welding strip, and although metal silver welding has high conductivity and low welding temperature, the commercial application of the solar cell is restricted due to the high price of the metal silver welding strip. Copper is used as metal with the conductivity second to silver, the price of the copper is low compared with that of silver, and the copper can effectively replace a silver soldering strip in a battery assembly, but copper wires are not convenient to weld as high-melting-point metal, the environmental temperature which can be endured by the crystalline silicon heterojunction battery cannot exceed 200 ℃, the smaller the diameter of the copper wires, the lower the consumption of the copper wires in the assembly, and the lower the cost. Based on the reasons, the method can uniformly coat a layer of low-melting-point metal on the surface of the superfine copper wire, can effectively solve the problem that the copper wire is difficult to weld and the battery is damaged due to overhigh welding temperature, provides a feasible method for reducing cost and improving efficiency for commercial application of the crystalline silicon heterojunction solar battery, and solves the problem that how to coat the low-melting-point metal on the surface of the superfine copper wire and what device is used for coating.
Disclosure of Invention
The invention aims to solve the problems and designs a structure for uniformly coating a low-melting-point metal on the surface of an ultra-fine copper wire.
The invention realizes the purpose through the following technical scheme:
a structure for uniformly coating a low-melting-point metal on the surface of an extremely fine copper wire, comprising:
a first transfer tube; the inner diameter of the first transmission pipe is slightly larger than that of the copper wire;
a second transfer pipe; the low-melting-point metal is arranged in the second conveying pipe in a molten state; the copper wires sequentially penetrate through the second transmission pipe and the first transmission pipe;
a condenser tube; the condensing pipe is sleeved on the outer wall of the first transmission pipe.
Further, the structure for uniformly coating the low-melting-point metal on the surface of the superfine copper wire further comprises a heat insulation layer, the heat insulation layer is arranged between the first transmission pipe and the second transmission pipe, a material scraping hole used for scraping redundant low-melting-point metal slurry coated on the copper wire is formed in the heat insulation layer, and the copper wire coated with the low-melting-point metal slurry penetrates through the material scraping hole.
Furthermore, the structure for uniformly coating the low-melting-point metal on the surface of the superfine copper wire further comprises a material pushing gate for scraping off low-melting-point metal slurry stacked on the heat insulation layer, and the material pushing gate is arranged on one side, far away from the first transmission pipe, of the heat insulation layer.
Further, the material pushing gate comprises a longitudinal material pushing gate and a transverse material pushing gate, a longitudinal groove is longitudinally formed in the longitudinal material pushing gate, a transverse groove is transversely formed in the transverse material pushing gate, and when the material pushing gate works, the copper wires are respectively clamped into the transverse groove and the longitudinal groove.
Furthermore, the first transmission pipe and the second transmission pipe are both obliquely arranged, one end, penetrating into the second transmission pipe, of the copper wire is the highest position, and one end, penetrating out of the first transmission pipe, of the copper wire is the lowest position.
Preferably, the outer wall of the second conveying pipe is provided with a heating resistance wire.
Further, a structure for carrying out the even cladding of low-melting metal on superfine copper wire surface still includes the mixing tank, mixing tank heater, the mixing tank gate that are used for the splendid attire to be the low-melting metal of molten state, and the heating portion of mixing tank heater acts on the mixing tank, is provided with the transmission mouth on the mixing tank, and the transmission mouth communicates with the one end of second transmission pipe, and the mixing tank gate is installed on the mixing tank and is used for the switching transmission mouth.
The structure for uniformly coating the low-melting-point metal on the surface of the superfine copper wire further comprises a residual material groove, a residual material groove heater and a mechanical pump, wherein the residual material groove is arranged below the material pushing gate, the heating part of the residual material groove heater acts on the residual material groove, the feeding end of the mechanical pump is connected with the residual material groove, and the discharging end of the mechanical pump is connected with the mixing groove.
Further, the structure for uniformly coating the low-melting-point metal on the surface of the superfine copper wire further comprises a plurality of raw material grooves, a raw material groove heater and a conveying pipe, wherein a heating part of the raw material groove heater acts on the raw material grooves, first ends of the conveying pipes are respectively connected with the raw material grooves, and second ends of the conveying pipes are arranged in the mixing tank.
Further, a structure for carrying out the even cladding of low melting point metal on superfine copper wire surface still includes copper wire guide rod, and the one end of copper wire guide rod is connected with the starting department of copper wire, and before the copper wire begins the cladding, the copper wire guide rod passes second transmission pipe, first transmission pipe setting in proper order.
The invention has the beneficial effects that:
by adopting the condenser pipe, the coated copper wire can be rapidly solidified, the coated copper wire can be prevented from falling off by coating slurry in the process of slowly cooling in an external environment, and the coating is not uniform due to external factors, so that the coating efficiency is improved;
the excessive coating slurry on the surface of the copper wire can be scraped through the heat insulation layer and the upper scraping hole thereof, so that the thickness and the shape of the coating layer of the copper wire are unified;
the setting of surplus silo can be collected the unnecessary cladding thick liquids that the insulating layer was scraped, accomplishes recycling under the effect of mechanical pump, avoids the thick liquids extravagant.
Drawings
FIG. 1 is a schematic perspective view of the present application;
FIG. 2 is a schematic view of a quartz glass tube and a heating resistance wire being wound;
FIG. 3 is a schematic view of a condenser tube and a fiberglass tube;
FIG. 4 is a schematic plan view of a double-deck pusher gate;
fig. 5 is a schematic view of a copper wire guide rod.
In the figure: 1. a raw material tank; 2. a delivery pipe; 3. a raw material tank heater; 4. a mixing tank; 5. a mixing tank heater; 6. a material pushing gate; 7. a surplus tank; 8. a condenser tube; 9. a first transfer tube; 10. collecting rollers for copper wires; 11. a condensation chamber; 12. a second transfer pipe; 13. a mechanical pump; 14. a copper wire; 15. a copper wire guide rod; 16. heating resistance wires; 17. a longitudinal pushing gate; 18. a transverse pushing gate; 19. a thermal insulation layer; 20. a leftover bin heater; 21. a water outlet of the condensation pipe; 22. a water inlet of the condensation pipe; 23. a mixing tank gate.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "inside", "outside", "left", "right", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, or the orientations or positional relationships that the products of the present invention are conventionally placed in use, or the orientations or positional relationships that are conventionally understood by those skilled in the art, and are used for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like are used solely to distinguish one from another, and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is also to be noted that, unless otherwise explicitly stated or limited, the terms "disposed" and "connected" are to be interpreted broadly, and for example, "connected" may be a fixed connection, a detachable connection, or an integral connection; can be mechanically or electrically connected; the connection may be direct or indirect via an intermediate medium, and may be a communication between the two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
The following detailed description of embodiments of the invention refers to the accompanying drawings.
As shown in fig. 1, a structure for uniformly coating a low-melting-point metal on the surface of an extremely fine copper wire comprises:
a first transfer pipe 9; the inner diameter of the first transmission pipe 9 is slightly larger than that of the copper wire 14;
a second transfer pipe 12; the low-melting-point metal is placed in a second conveying pipe 12 in a molten state; the copper wire 14 sequentially passes through the second transmission pipe 12 and the first transmission pipe 9; when the copper wire 14 passes through the first transmission pipe 9, gaps are required to be formed between the side wall of the copper wire 14 and the inner side wall of the first transmission pipe 9, and the gaps are the same;
a condenser tube 8; the condenser pipe 8 is sleeved on the outer wall of the first transmission pipe 9 and used for cooling the copper wire 14 coated with the low-melting-point metal passing through the first transmission pipe 9;
the first transmission pipe 9 is selected as a glass fiber pipe, the glass fiber pipe is made by glass drawing, homogeneous glass is heated to a molten state to form glass liquid, the temperature is sharply reduced and the viscosity is sharply changed when the glass liquid flows out from a discharge spout and enters a gas space, and simultaneously, the glass liquid overcomes the internal friction of the glass liquid and is stretched and deformed into the glass fiber pipe by the action of the drawing force of a drawing machine and the surface tension when a new surface is formed.
The low-melting point metal raw material comprises alloys composed of elements such as bismuth, tin, lead, germanium, indium, copper, silver, nickel and the like, and comprises but is not limited to tin-bismuth alloy, bismuth-lead alloy, lead-tin alloy, tin-bismuth-silver alloy, tin-bismuth-lead alloy, tin-bismuth-silver-germanium alloy, tin-bismuth-lead-indium alloy and tin-bismuth-silver-germanium-nickel alloy. The melting temperature of the low-melting-point metal is 100-300 ℃.
The diameter of the copper wire 14 is 20-200 microns, the preparation method can be wire drawing, rolling, electroforming and the like, and the outlet speed of the copper wire 14 is 1-50 cm/s.
The second transmission tube 12 is made of quartz glass, the tube diameter is 2-3 cm, the melting point is greater than 1600 ℃, and the temperature in the quartz tube is 130-.
As shown in fig. 3, the condenser pipe 8 is designed as a straight condenser pipe 8, the lower end of the straight condenser pipe is provided with a condenser pipe water inlet 22, the upper end of the straight condenser pipe is provided with a condenser pipe water outlet 21, the glass fiber inside the straight condenser pipe is made by traditional glass drawing, and the diameter of the straight condenser pipe is about 100 microns. When the copper wire 14 passes through the glass fiber tube, the low-melting-point alloy solution coated on the surface of the copper wire is gradually solidified under the action of the condensation tube 8.
As shown in fig. 1 and 4, the structure for uniformly coating the surface of the ultra-fine copper wire 14 with the low-melting-point metal further includes a heat insulation layer 19, the heat insulation layer 19 is disposed between the first transmission pipe 9 and the second transmission pipe 12, a scraping hole for scraping off excess low-melting-point metal slurry coated on the copper wire 14 is formed in the heat insulation layer 19, and the copper wire 14 coated with the low-melting-point metal slurry passes through the scraping hole. The design premise of the heat insulation layer 19 is to ensure that the contact surface with the pushing gate 6 is smooth enough to prevent slurry from being adsorbed, so one or more of the following materials are selected: gold, silver, nickel, aluminum foil or metallized polyester, polyimide film, and the like. Compared with the traditional coating technology, when the diameter of the coating silk thread is too small, the coating thickness and uniformity of the surface of the coating silk thread are difficult to control through a coating machine, the method benefits from the physical structure and shape of the material scraping hole, the process is simple, mechanical faults and related loss are not generated, and the related slurry coating speed can be freely adjusted through the copper wire collecting roller 10. The application scenes include but are not limited to the field of solar cell manufacturing, the uniform coloring of the surfaces of related micron-sized silk threads in the field of technical textiles and the uniform coating of the soldering flux on the surfaces of micron-sized metal silk threads in the field of electric welding. For the traditional crystalline silicon heterojunction photovoltaic module, a silver solder strip is adopted for cell interconnection, the cost is increased due to the fact that the silver solder strip is expensive, the copper wire 14 is not suitable for welding due to the fact that the melting point is too high, the method enables the copper wire 14 to replace the silver solder strip through the process that the surface of the copper wire 14 is evenly coated with the low-melting-point alloy, and the other possibility is provided for reducing the cost and improving the efficiency of the all-copper interconnection of the photovoltaic module.
As shown in fig. 1 and 4, the structure for uniformly coating the surface of the ultra-fine copper wire 14 with the low-melting-point metal further includes a material pushing gate 6 for scraping off the low-melting-point metal slurry stacked on the heat insulation layer 19, and the material pushing gate 6 is disposed on the side of the heat insulation layer 19 away from the first transmission pipe 9. The material pushing gate 6 comprises a longitudinal material pushing gate 17 and a transverse material pushing gate 18, a longitudinal groove is longitudinally formed in the longitudinal material pushing gate 17, a transverse groove is transversely formed in the transverse material pushing gate 18, and when the material pushing gate 6 works, the copper wires 14 are respectively clamped into the transverse groove and the longitudinal groove.
Because the excessive coating slurry is rejected at the joint of the glass fiber tube and the heat insulation layer 19 due to the non-uniformity of the coating in the quartz glass tube and the diameter limitation of the glass fiber tube, the pushing gate 6 adopts a double-layer composite structure, and achieves the purpose of rejecting and collecting the excessive slurry on the surface of the heat insulation layer 19 by overlapping and overlapping the structure with the middle groove. The specific implementation mode is as follows: the method comprises the steps of firstly pushing a transverse gate to push out surplus slurry on the upper surface and the lower surface of a central hole of a heat insulation layer 19, then pushing a longitudinal gate to push out the slurry pushed out by the transverse gate and the surplus slurry on the left surface and the right surface of the central hole, finally collecting the surplus slurry through a surplus trough 7, heating the surplus slurry through a surplus trough heater 20 to prevent solidification, and transferring the surplus slurry to a mixing tank 4 through a conveying pipe 2 under the action of a mechanical pump 13 to complete recycling.
As shown in fig. 1, the first transmission tube 9 and the second transmission tube 12 are both disposed obliquely, one end of the copper wire 14 penetrating into the second transmission tube 12 is a highest position, and one end of the copper wire 14 penetrating out of the first transmission tube 9 is a lowest position. The height of the raw material tank 1 is higher than that of the mixing tank 4, and the height of the mixing tank 4 is higher than that of the residue tank 7. The design aims to facilitate the transportation of the low-melting-point metal slurry by means of gravity, and save energy.
As shown in fig. 2, the outer wall of the second conveying pipe 12 is provided with a heating resistance wire 16. The heating resistance wire 16 is uniformly wound on the outer wall of the second conveying pipe 12 and used for heating the low-melting-point metal slurry; the heating resistance wire 16 heats the temperature in the quartz tube to 130 ℃ and 330 ℃. The heating resistance wire 16 may be made of iron chromium aluminum wire, nickel chromium wire or tungsten wire. The heating resistance wire 16 is used for heating the second transmission pipe 12, so that the metal raw material is prevented from being solidified on the inner pipe wall, the temperature inside the quartz glass pipe can be changed through the current of the heating resistance wire 16, the inner slurry can reach the optimal coating temperature, and the coating effect on the copper wire 14 is improved.
As shown in fig. 1, the structure for uniformly coating the surface of the ultra fine copper wire 14 with the low melting point metal further includes a mixing tank 4 for containing the low melting point metal in a molten state, a mixing tank heater 5, and a mixing tank gate 23, a heating portion of the mixing tank heater 5 acts on the mixing tank 4, the mixing tank 4 is provided with a transfer port which communicates with one end of the second transfer pipe 12, and the mixing tank gate 23 is attached to the mixing tank 4 and opens and closes the transfer port. The low melting point metal is uniformly mixed in the mixing tank 4 through a centrifugal rotating shaft in the mixing tank 4, and the rotating speed is 10 revolutions per minute. The purpose of the mixing tank heater 5 is to keep the metal slurry located in the mixing tank 4 in a molten state.
As shown in fig. 1, the structure for uniformly coating the surface of the ultra-fine copper wire 14 with the low-melting-point metal further comprises a residual material tank 7, a residual material tank heater 20 and a mechanical pump 13, wherein the residual material tank 7 is arranged below the material pushing gate 6, a heating part of the residual material tank heater 20 acts on the residual material tank 7, a feeding end of the mechanical pump 13 is connected with the residual material tank 7, and a discharging end of the mechanical pump 13 is connected with the mixing tank 4. The purpose of the remainder chute heater 20 is to maintain the metal slurry located in the remainder chute 7 in a molten state.
As shown in fig. 1, the structure for uniformly coating the surface of the ultrafine copper wire 14 with the low-melting-point metal further includes a plurality of raw material tanks 1, a raw material tank heater 3, and feed pipes 2, wherein the heating portion of the raw material tank heater 3 acts on the plurality of raw material tanks 1, first ends of the plurality of feed pipes 2 are connected to the plurality of raw material tanks 1, respectively, and second ends of the plurality of feed pipes 2 are placed in the mixing tank 4. The raw material tank 1 can mix raw materials of the coating slurry. And mixed in the mixing tank 4 by a stirring device therein. The purpose of the raw material tank heater 3 is to melt the metal raw material located in the raw material tank 1.
As shown in fig. 1 and 5, the structure for uniformly coating the surface of the ultra-fine copper wire 14 with the low-melting-point metal further comprises a copper wire guide rod 15, one end of the copper wire guide rod 15 is connected with the starting position of the copper wire 14, and the copper wire guide rod 15 sequentially penetrates through the second transmission pipe 12 and the first transmission pipe 9 before the copper wire 14 starts to be coated.
As shown in fig. 1, the present application further comprises a copper wire collecting roller 10 for collecting the coated copper wire 14 for storage and transportation.
The working principle or process of the application is as follows: the low melting point metal raw materials are put into a raw material tank 1 according to the proportion, the raw materials are melted under the action of a raw material tank heater 3 and then flow into a bottom mixing tank 4, a mixing tank gate 23 is opened after uniform mixing, and mixed metal slurry flows into a filling second conveying pipe 12. The copper wire 14 passes through the mixing tank 4, the second transmission pipe 12 and the first transmission pipe 9 with the condensation pipe 8 in sequence under the traction of the copper wire guide rod 15; the thickness of the coating layer of the heat insulation layer 19 can be limited and the uniformity can be improved, and the heat insulation layer is cooled by the condensation pipe 8 and then collected by the copper wire collecting roller 10.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A structure for uniformly coating a low-melting-point metal on the surface of an extremely fine copper wire is characterized by comprising:
a first transfer tube; the inner diameter of the first transmission pipe is slightly larger than that of the copper wire;
a second transfer pipe; the low-melting-point metal is arranged in the second conveying pipe in a molten state; the copper wires sequentially penetrate through the second transmission pipe and the first transmission pipe;
a condenser tube; the condensing pipe is sleeved on the outer wall of the first transmission pipe.
2. The structure for uniformly coating the surface of the superfine copper wire with the low-melting-point metal according to claim 1, wherein the structure for uniformly coating the surface of the superfine copper wire with the low-melting-point metal further comprises a heat insulation layer, the heat insulation layer is arranged between the first transmission pipe and the second transmission pipe, a scraping hole for scraping redundant low-melting-point metal slurry coated on the copper wire is formed in the heat insulation layer, and the copper wire coated with the low-melting-point metal slurry passes through the scraping hole.
3. The structure for uniformly coating the surface of the superfine copper wire with the low-melting-point metal is characterized by further comprising a pushing gate for scraping off the low-melting-point metal slurry stacked on the heat insulation layer, wherein the pushing gate is arranged on one side, far away from the first transmission pipe, of the heat insulation layer.
4. The structure for uniformly coating the surface of the extremely fine copper wire with the low melting point metal as claimed in claim 3, wherein the material pushing gate comprises a longitudinal material pushing gate and a transverse material pushing gate, a longitudinal groove is longitudinally formed on the longitudinal material pushing gate, a transverse groove is transversely formed on the transverse material pushing gate, and the copper wire is clamped into the transverse groove and the longitudinal groove respectively when the material pushing gate is in operation.
5. The structure of claim 1, wherein the first transmission tube and the second transmission tube are inclined, the end of the copper wire penetrating into the second transmission tube is the highest position, and the end of the copper wire penetrating out of the first transmission tube is the lowest position.
6. The structure for uniformly coating the surface of the superfine copper wire with the low-melting-point metal is characterized in that a heating resistance wire is arranged on the outer wall of the second conveying pipe.
7. The structure for uniformly coating the surface of the ultra fine copper wire with the low melting point metal according to claim 3, further comprising a mixing tank for containing the low melting point metal in a molten state, a mixing tank heater, and a mixing tank gate, wherein the mixing tank heater has a heating portion acting on the mixing tank, the mixing tank is provided with a transfer port communicating with one end of the second transfer pipe, and the mixing tank gate is installed on the mixing tank and opens and closes the transfer port.
8. The structure for uniformly coating the surface of the superfine copper wire with the low-melting-point metal is characterized by further comprising a residual trough, a residual trough heater and a mechanical pump, wherein the residual trough is arranged below the material pushing gate, a heating part of the residual trough heater acts on the residual trough, a feeding end of the mechanical pump is connected with the residual trough, and a discharging end of the mechanical pump is connected with the mixing trough.
9. The structure for uniformly coating the surface of the superfine copper wire with the low-melting-point metal according to claim 7, wherein the structure for uniformly coating the surface of the superfine copper wire with the low-melting-point metal further comprises a plurality of raw material tanks, a raw material tank heater, and a plurality of material delivery pipes, wherein the raw material tanks are acted on by heating portions of the raw material tank heater, first ends of the plurality of material delivery pipes are respectively connected with the plurality of raw material tanks, and second ends of the plurality of material delivery pipes are arranged in the mixing tank.
10. The structure for uniformly coating the surface of the superfine copper wire with the low-melting-point metal is characterized by further comprising a copper wire guide rod, wherein one end of the copper wire guide rod is connected with the starting position of the copper wire, and the copper wire guide rod sequentially passes through the second transmission pipe and the first transmission pipe before the copper wire starts to be coated.
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