CN114951880B - Method for welding three-layer ceramic target - Google Patents
Method for welding three-layer ceramic target Download PDFInfo
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- CN114951880B CN114951880B CN202210665992.4A CN202210665992A CN114951880B CN 114951880 B CN114951880 B CN 114951880B CN 202210665992 A CN202210665992 A CN 202210665992A CN 114951880 B CN114951880 B CN 114951880B
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- 239000000919 ceramic Substances 0.000 title claims abstract description 157
- 238000003466 welding Methods 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 59
- 230000008595 infiltration Effects 0.000 claims abstract description 91
- 238000001764 infiltration Methods 0.000 claims abstract description 91
- 229910052751 metal Inorganic materials 0.000 claims abstract description 84
- 239000002184 metal Substances 0.000 claims abstract description 84
- 229910000679 solder Inorganic materials 0.000 claims abstract description 59
- 238000003825 pressing Methods 0.000 claims abstract description 33
- 238000010438 heat treatment Methods 0.000 claims abstract description 24
- 239000007788 liquid Substances 0.000 claims abstract description 20
- 239000013077 target material Substances 0.000 claims abstract description 20
- 230000001502 supplementing effect Effects 0.000 claims abstract description 10
- 238000001816 cooling Methods 0.000 claims abstract description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 39
- 239000010936 titanium Substances 0.000 claims description 39
- 229910052719 titanium Inorganic materials 0.000 claims description 39
- 229910052738 indium Inorganic materials 0.000 claims description 18
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 18
- 238000004140 cleaning Methods 0.000 claims description 11
- 229910000831 Steel Inorganic materials 0.000 claims description 8
- 238000007654 immersion Methods 0.000 claims description 8
- 239000003960 organic solvent Substances 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 8
- 239000010959 steel Substances 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 239000011324 bead Substances 0.000 claims 1
- 238000005219 brazing Methods 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000012797 qualification Methods 0.000 abstract description 4
- 239000002905 metal composite material Substances 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 128
- 230000000052 comparative effect Effects 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 238000005477 sputtering target Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000004907 flux Effects 0.000 description 7
- 238000007747 plating Methods 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000011889 copper foil Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000000788 chromium alloy Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000005493 welding type Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K3/00—Tools, devices, or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/18—Dissimilar materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Ceramic Products (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention provides a method for welding a ceramic target with a three-layer structure, which comprises the following steps: (1) Under the heating condition, carrying out first infiltration on the component, wherein the component comprises a ceramic target blank, a metal middle layer and a ceramic back plate; (2) After the first infiltration of the assembly is completed, taking the ceramic backboard as a solder pool, buckling the metal middle layer on the ceramic backboard, applying pressure to the edge of the metal middle layer, and supplementing solder after the buckling is completed, so that the liquid level of the solder is higher than that of the metal middle layer, and carrying out second infiltration on the metal middle layer; (3) After the second infiltration of the metal intermediate layer is finished, buckling the ceramic target blank on the metal intermediate layer, applying pressure to the ceramic target blank, and integrally cooling after buckling to obtain the ceramic target material with the three-layer structure; the method effectively reduces the production cost on the premise of ensuring the welding qualification rate of the ceramic and metal composite target by improving the traditional brazing.
Description
Technical Field
The invention belongs to the field of sputtering targets, and particularly relates to a method for welding a ceramic target with a three-layer structure.
Background
The ceramic target has excellent performance, abundant raw materials and low price, and the thin film formed by sputtering has low resistivity, high visible light region transmittance, high infrared region reflectance and high ultraviolet absorptivity, and is widely applied to the fields of solar cell electrodes, liquid crystal displays and the like. The rotary ceramic tube target can improve the utilization rate of the ceramic target material and is beneficial to improving the uniformity of film formation, so the ceramic tube target is one of the hot researches of researchers in recent years.
The welding method adopted by the target material for the semiconductor sputtering is isostatic diffusion welding and brazing welding. For targets with high use requirements and relatively complex structures (three-layer structures), a diffusion welding mode is generally used. However, many sputtering targets have lower manufacturing process and low price, diffusion welding can increase the welding cost of the targets, reduce the production profits of enterprises, and reduce the production cost, and simultaneously, the welded targets meet the use requirements of customers, and the challenge is to balance the welding strength and the welding cost for ceramic and metal targets with complex welding structures.
CN109608221a discloses a method for preparing an aluminum nitride ceramic copper-clad substrate, which comprises the following steps: (1) Immersing an aluminum nitride substrate into an oil removing solution, and cleaning by using an ultrasonic cleaning process; (2) removing the surface oxide layer of the aluminum nitride substrate; (3) Placing aluminum nitride into a vacuum heating furnace for heat treatment; (4) Radiating energy beams to the joint surface of the ceramic substrate and the copper foil to form an active joint surface; (5) Placing the ceramic substrate with the active bonding surface in a vacuum chamber; (6) N 2 passes through the chamber, and a nickel-plating target is started to form ion beam sputtering to form a nickel-plating ceramic substrate; (7) And attaching the nickel-plated ceramic substrate and the cleaned copper foil to-be-welded part in a relative mode, and then placing the nickel-plated ceramic substrate and the cleaned copper foil in a vacuum expansion welding furnace for expansion welding. The preparation method greatly improves the welding strength, but has high manufacturing cost.
CN101879640a discloses a method for soldering a ceramic sputtering target, which comprises providing a back plate, and forming a soft solder layer with low-melting-point solder on one surface thereof; providing a ceramic sputtering target material, and performing pure chromium or chromium alloy coating treatment on one surface of the ceramic sputtering target material to form an interface layer; annealing the ceramic sputtering target material with the interface layer; the solder layer of the back plate and the interface layer of the target material are in soft soldering connection. The method forms a chromium or chromium alloy interface layer on the ceramic sputtering target material, and after annealing treatment, the interface layer and the soft solder layer have excellent bonding adhesion capability, so that the ceramic sputtering target material and the backboard are bonded more tightly; however, the complicated procedure makes the cost of the method too high, and the method has no potential of large-scale popularization.
CN110937911a discloses a target assembly forming method, comprising: providing a ceramic target, wherein the ceramic target is provided with a target welding surface; providing a metal back plate, wherein the metal back plate is provided with a back plate welding surface; nickel plating is carried out on the welding surface of the target material to form a nickel plating layer; and placing brazing filler metal on the surface of the nickel coating and the welding surface of the backboard, and welding the ceramic target and the metal backboard to form a target assembly. The nickel plating process is still complex because the nickel plating process is also needed on the welding surface of the target material.
Therefore, a new method for welding ceramic targets is needed to obtain better bonding strength at lower cost.
Disclosure of Invention
Aiming at the problems of unbalanced welding performance and welding cost and the like in the prior art, the invention provides a method for welding a ceramic target with a three-layer structure, which ensures the welding qualification rate by improving the step of brazing and effectively reduces the production cost.
To achieve the purpose, the invention adopts the following technical scheme:
the invention provides a method for welding a ceramic target with a three-layer structure, which comprises the following steps:
(1) Under the heating condition, carrying out first infiltration on the component, wherein the component comprises a ceramic target blank, a metal middle layer and a ceramic back plate;
(2) After the first infiltration of the assembly is completed, taking the ceramic backboard as a solder pool, buckling the metal middle layer on the ceramic backboard, applying pressure to the edge of the metal middle layer, and supplementing solder after the buckling is completed, so that the liquid level of the solder is higher than that of the metal middle layer, and carrying out second infiltration on the metal middle layer;
(3) And after the second infiltration of the metal intermediate layer is finished, buckling the ceramic target blank on the metal intermediate layer, applying pressure to the ceramic target blank, and integrally cooling after the buckling is finished to obtain the ceramic target material with the three-layer structure.
According to the method for welding the three-layer structure ceramic target, in order to control the cost, the layers of the ceramic and metal composite target are welded in a brazing mode with low difficulty and low cost, and in order to ensure that the combination of metal and ceramic materials is as tight as possible, the type of welding flux is optimized, and the binding among targets of different materials is completed in a heating and soaking mode in consideration of the characteristics of high hardness and high brittleness of the ceramic target; the types of the ceramic targets in the invention include oxide ceramic targets, silicide ceramic targets, nitride ceramic targets, fluoride ceramic targets, sulfide ceramic targets and the like, are not particularly limited, and can be carried out by adopting conventional operation or can be adjusted according to actual technology.
Preferably, the material of the metal intermediate layer comprises titanium.
Preferably, the first infiltration and the second infiltration both use solder as infiltration liquid.
Preferably, the kind of solder includes indium solder.
Preferably, the purity of the indium solder is equal to or greater than 99.99%, for example, 99.99%, 99.992%, 99.995%, 99.999%, or the like, but is not limited to the recited values, and other non-recited values within the range are equally applicable.
The invention adopts high-purity (the purity is more than or equal to 99.99%) indium solder as solder, and has the advantages of soft indium, good toughness, higher purity, and better wettability with ceramic materials and most metal materials.
Preferably, before the heating in the step (1), a heat-resistant adhesive tape is attached to the sputtering surface of the ceramic target blank and the area of the ceramic backboard except the welding surface for protection.
Preferably, the two welding surfaces of the metal intermediate layer are polished, cleaned and dried before the heating in the step (1).
Preferably, the cleaning liquid is an organic solvent.
Preferably, the heating temperature in step (1) is 160-200deg.C, such as 160, 170, 180, 190, or 200, but not limited to the values recited, and other values not recited in the range are equally applicable.
The preferred heating temperature of the invention is 160-200 ℃, and the invention has the advantages that in the temperature range, the melting of the indium solder can be ensured, and the slag is not easy to oxidize.
Preferably, the first infiltration comprises the steps of:
And (3) using a steel brush to infiltrate the two welding surfaces of the metal intermediate layer at least twice, and simultaneously using ultrasonic waves to infiltrate the ceramic target blank, the metal intermediate layer and the ceramic backboard.
The invention preferably adopts an ultrasonic infiltration mode to uniformly coat the welding surface of the assembly with the welding flux, and adopts the ultrasonic infiltration mode to promote the uniform distribution of the welding flux as far as possible in consideration of the fact that the ceramic target is not easy to combine with metal, thereby avoiding defects such as interlayer flaws, bubbles and the like after cooling and ensuring the welding qualification rate.
The intensity of the ultrasonic wave in the first immersion is preferably not less than 300W, and may be, for example, 300W, 320W, 350W, 380W, 400W, or the like, but is not limited to the values listed, and other values not listed in the range are equally applicable.
Preferably, the time of the ultrasonic wave in the first immersion is 10-30min, for example, 10min, 15min, 20min, 25min or 30min, but not limited to the recited values, and other non-recited values within the range of values are equally applicable.
Preferably, the method of applying pressure to the edge of the metal intermediate layer in step (2) includes pressing the edge of the metal intermediate layer using a pressing bar.
Preferably, the material of the pressing strip comprises stainless steel.
Preferably, the shape of the batten is sheet-shaped.
Preferably, the pressing bar presses the edge of the metal intermediate layer to have strength which does not shake.
Preferably, the level of the solder in step (2) is 1-3mm higher than the metal intermediate layer, which may be, for example, 1mm, 1.5mm, 2mm, 2.5mm or 3mm, but is not limited to the recited values, and other non-recited values within this range are equally applicable.
Preferably, the second wetting means comprises ultrasonic wetting.
The invention adopts the second infiltration to the metal intermediate layer in the middle welding section and adopts the ultrasonic infiltration, and has the advantages of supplementing the welding flux on the other welding surface of the metal intermediate layer, avoiding the loss of the welding flux after the pressure is applied to the edge of the metal intermediate layer, ensuring the welding bonding strength by distributing sufficient indium welding flux between the metal intermediate layer and the ceramic target material.
The intensity of the ultrasonic wave in the second immersion is preferably not less than 300W, and may be, for example, 300W, 320W, 350W, 380W, 400W, or the like, but is not limited to the values listed, and other values not listed in the range are equally applicable.
The time of the ultrasonic wave in the second immersion is preferably not more than 1min, and may be, for example, 1min, 0.9min, 0.8min, 0.7min, 0.6min, or 0.5min, but is not limited to the recited values, and other values not recited in the range of values are equally applicable.
Preferably, the method of applying pressure to a ceramic target blank in step (3) includes placing a compact on the ceramic target blank.
Preferably, the pressure generated by placing the compact on the ceramic target blank is 0.003-0.01MPa, for example, 0.003MPa, 0.005MPa, 0.007MPa, 0.009MPa or 0.01MPa, but is not limited to the recited values, and other non-recited values within the range are equally applicable.
As a preferred embodiment of the present invention, the method comprises the steps of:
(1) Polishing two welding surfaces of the metal intermediate layer, cleaning with an organic solvent and drying; heating to 160-200 ℃, and performing first infiltration on the ceramic target blank, the metal intermediate layer and the ceramic backboard, wherein the first infiltration comprises the steps of using a steel brush to infiltrate two welding surfaces of the metal intermediate layer at least twice, and simultaneously using ultrasonic waves which are more than or equal to 300W to infiltrate the ceramic target blank, the metal intermediate layer and the ceramic backboard for 10-30 min;
(2) After the first infiltration of the assembly is completed, taking the ceramic backboard as a solder pool, buckling the metal middle layer onto the ceramic backboard, pressing the edge of the metal middle layer by using a pressing bar to ensure that the metal middle layer does not shake, supplementing solder after buckling is completed, enabling the liquid level of the solder to be 1-3mm higher than that of the metal middle layer, and carrying out second infiltration of less than or equal to 1min on the metal middle layer by using ultrasonic waves of more than or equal to 300W;
(3) And after the second infiltration of the metal intermediate layer is finished, buckling the ceramic target blank on the metal intermediate layer, and placing the ceramic target blank on the ceramic target blank by using a pressing block under the pressure of 0.003-0.01MPa, and integrally cooling after the buckling is finished to obtain the ceramic target material with the three-layer structure.
The first infiltration and the second infiltration are both made of indium solder with the purity of more than or equal to 99.99 percent as infiltration liquid.
Compared with the prior art, the invention has the beneficial effects that:
(1) According to the method for welding the three-layer ceramic target, provided by the invention, the three-layer ceramic target is obtained by adopting a heating and solder infiltration assembly method, bubbles and impurities are not contained between adjacent layers, the bonding strength is more than or equal to 9.2MPa, the welding bonding rate is more than or equal to 99.2%, the bonding is tight, and the qualification rate is high;
(2) According to the method for welding the ceramic target with the three-layer structure, provided by the invention, the brazing method is adopted, so that the welding difficulty and cost are reduced, the operation is simple and convenient, and the yield is promoted.
Drawings
Fig. 1 is a schematic structural diagram of a three-layer ceramic target after welding according to an embodiment of the present invention.
Wherein, 1, a ceramic target blank; 2. a metal intermediate layer; 3. a ceramic back plate.
Detailed Description
To facilitate understanding of the present invention, examples are set forth below. It will be apparent to those skilled in the art that the examples are merely to aid in understanding the invention and are not to be construed as a specific limitation thereof.
It should be appreciated that the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first", "a second", etc. may explicitly or implicitly include one or more such feature. In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more.
It should be noted that, in the description of the present invention, unless explicitly specified and limited otherwise, the terms "disposed," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art in a specific case.
The technical scheme of the invention is further described below by the specific embodiments with reference to the accompanying drawings.
In one embodiment, the invention provides a method for welding a ceramic target with a three-layer structure, which comprises the following steps:
(1) Polishing two welding surfaces of the metal intermediate layer, cleaning with an organic solvent and drying; heating to 160-200 ℃, and performing first infiltration on the ceramic target blank, the metal intermediate layer and the ceramic backboard, wherein the first infiltration comprises the steps of using a steel brush to infiltrate two welding surfaces of the metal intermediate layer at least twice, and simultaneously using ultrasonic waves which are more than or equal to 300W to infiltrate the ceramic target blank, the metal intermediate layer and the ceramic backboard for 10-30 min;
(2) After the first infiltration of the assembly is completed, taking the ceramic backboard as a solder pool, buckling the metal middle layer onto the ceramic backboard, pressing the edge of the metal middle layer by using a pressing bar to ensure that the metal middle layer does not shake, supplementing solder after buckling is completed, enabling the liquid level of the solder to be 1-3mm higher than that of the metal middle layer, and carrying out second infiltration of less than or equal to 1min on the metal middle layer by using ultrasonic waves of more than or equal to 300W;
(3) After the second infiltration of the metal intermediate layer is completed, the ceramic target blank is buckled on the metal intermediate layer, a pressing block is used for placing the ceramic target blank at the pressure of 0.003-0.01MPa, and the ceramic target blank is integrally cooled after the completion of buckling, so that the three-layer structure ceramic target material shown in the figure 1 is obtained, wherein the ceramic target blank 1 is positioned at the top end, the metal intermediate layer 2 is arranged in the middle, the stratum is the ceramic backboard 3, and the three materials are tightly combined after welding.
The first infiltration and the second infiltration are both made of indium solder with the purity of more than or equal to 99.99 percent as infiltration liquid.
It should be understood that the process provided by the embodiments of the present invention or the replacement or variation of conventional data is within the scope of the present invention and the disclosure.
Example 1
The embodiment provides a method for welding a ceramic target with a three-layer structure, which comprises the following steps:
(1) Polishing two welding surfaces of the titanium intermediate layer, cleaning with an organic solvent and drying; heating to 180 ℃, carrying out first infiltration on the ceramic target blank, the titanium intermediate layer and the ceramic backboard, wherein the first infiltration comprises twice infiltration on two welding surfaces of the titanium intermediate layer by using a steel brush, and simultaneously, carrying out infiltration on the ceramic target blank, the titanium intermediate layer and the ceramic backboard for 30min by using ultrasonic waves of 300 MPa;
(2) After the first infiltration of the assembly is completed, taking the ceramic backboard as a solder pool, buckling the titanium intermediate layer onto the ceramic backboard, pressing the edge of the titanium intermediate layer by using a pressing bar to ensure that the titanium intermediate layer does not shake, supplementing solder after the buckling is completed, enabling the liquid level of the solder to be 2mm higher than that of the titanium intermediate layer, and carrying out second infiltration on the titanium intermediate layer by using 300MPa ultrasonic waves for 1 min;
(3) And after the second infiltration of the titanium intermediate layer is finished, buckling the ceramic target blank on the titanium intermediate layer, and placing the ceramic target blank on the ceramic target blank by using a pressing block under the pressure of 0.008MPa, and integrally cooling after the buckling is finished to obtain the ceramic target material with the three-layer structure.
The first infiltration and the second infiltration are used for taking indium solder with the purity of 99.99% as infiltration liquid.
Example 2
The embodiment provides a method for welding a ceramic target with a three-layer structure, which comprises the following steps:
(1) Polishing two welding surfaces of the titanium intermediate layer, cleaning with an organic solvent and drying; heating to 160 ℃, performing first infiltration on the ceramic target blank, the titanium intermediate layer and the ceramic backboard, wherein the first infiltration comprises twice infiltration on two welding surfaces of the titanium intermediate layer by using a steel brush, and simultaneously, performing infiltration on the ceramic target blank, the titanium intermediate layer and the ceramic backboard for 10 minutes by using ultrasonic waves of 400W;
(2) After the first infiltration of the assembly is completed, taking the ceramic backboard as a solder pool, buckling the titanium intermediate layer onto the ceramic backboard, pressing the edge of the titanium intermediate layer by using a pressing bar to ensure that the titanium intermediate layer does not shake, supplementing solder after the buckling is completed, enabling the liquid level of the solder to be 3mm higher than that of the titanium intermediate layer, and carrying out second infiltration on the titanium intermediate layer by using 400W ultrasonic waves for 0.5 min;
(3) And after the second infiltration of the titanium intermediate layer is finished, buckling the ceramic target blank on the titanium intermediate layer, and placing the ceramic target blank on the ceramic target blank by using a pressing block under the pressure of 0.01MPa, and integrally cooling after the buckling is finished to obtain the ceramic target material with the three-layer structure.
The first infiltration and the second infiltration are used for taking indium solder with the purity of 99.99% as infiltration liquid.
Example 3
The embodiment provides a method for welding a ceramic target with a three-layer structure, which comprises the following steps:
(1) Polishing two welding surfaces of the titanium intermediate layer, cleaning with an organic solvent and drying; heating to 200 ℃, performing first infiltration on the ceramic target blank, the titanium intermediate layer and the ceramic backboard, wherein the first infiltration comprises twice infiltration on two welding surfaces of the titanium intermediate layer by using a steel brush, and simultaneously, performing infiltration on the ceramic target blank, the titanium intermediate layer and the ceramic backboard for 20min by using 350W ultrasonic waves;
(2) After the first infiltration of the assembly is completed, taking the ceramic backboard as a solder pool, buckling the titanium intermediate layer onto the ceramic backboard, pressing the edge of the titanium intermediate layer by using a pressing bar to ensure that the titanium intermediate layer does not shake, supplementing solder after the buckling is completed, enabling the liquid level of the solder to be 1mm higher than that of the titanium intermediate layer, and carrying out second infiltration on the titanium intermediate layer by using 350W ultrasonic waves for 0.8 min;
(3) And after the second infiltration of the titanium intermediate layer is finished, buckling the ceramic target blank on the titanium intermediate layer, and placing the ceramic target blank on the ceramic target blank by using a pressing block under the pressure of 0.003MPa, and integrally cooling after the buckling is finished to obtain the ceramic target material with the three-layer structure.
The first infiltration and the second infiltration are used for taking indium solder with the purity of 99.99% as infiltration liquid.
Example 4
This example provides a method for welding a ceramic target of a three-layer structure, which differs from example 1 only in that the two welding surfaces of the titanium intermediate layer are not polished, cleaned and baked.
Example 5
The present embodiment provides a method for welding a ceramic target with a three-layer structure, which is different from embodiment 1 only in that the first infiltration and the second infiltration both use tin solder with a purity of 99.99% as an infiltration liquid.
Example 6
This example provides a method for welding a ceramic target of three-layer structure, which differs from example 1 only in that the heating condition is 220 ℃.
Comparative example 1
This comparative example provides a method of three-layer structure ceramic target welding, which differs from example 1 only in that no infiltration of the ceramic target blank, titanium interlayer and ceramic backing plate is performed for 30 minutes in the first infiltration.
Comparative example 2
This comparative example provides a method of welding a ceramic target of three-layer structure, which differs from example 1 only in that the second infiltration is not performed on the titanium intermediate layer.
The three-layer structure ceramic target products obtained in examples 1 to 6 and comparative examples 1 to 2 were tested for bonding strength according to GB/T39163-2020, and for weld bonding rate according to the method for detecting weld defect rate and bonding rate of target assembly disclosed in CN 103792285B.
The bonding strength and the weld bonding rate of examples 1 to 6 and comparative examples 1 to 2 are shown in Table 1.
TABLE 1
| Bond Strength (MPa) | Welding bonding Rate (%) | |
| Example 1 | 9.5 | 99.2 |
| Example 2 | 9.2 | 99.5 |
| Example 3 | 9.7 | 99.5 |
| Example 4 | 1.8 | 63.7 |
| Example 5 | 3.3 | 78.1 |
| Example 6 | 5.9 | 84.8 |
| Comparative example 1 | 0.9 | 30.4 |
| Comparative example 2 | 2.4 | 48.5 |
As can be seen from table 1:
(1) In the embodiments 1-3, the ceramic-metal-ceramic three-layer structure is brazed by adopting a heating and indium solder wetting assembly method, the bonding strength is more than or equal to 9.2MPa, the welding bonding rate is more than or equal to 99.2%, the method is simple and has lower cost, but the obtained target assembly has excellent interlayer bonding force and higher bonding stability;
(2) As can be seen from the combination of example 1 and example 4, in example 4, compared with example 1, the welding surfaces of the titanium intermediate layers are not polished, cleaned and dried in advance, but in example 1, the bonding strength of the three-layer target assembly obtained in example 4 is only 1.8MPa, and the welding bonding rate is only 63.7%, thus showing that the bonding force and stability between the target layers can be effectively improved by performing the polishing cleaning treatment on the welding surfaces;
(3) As can be seen from the combination of example 1 and example 5, in example 5, compared with example 1, the welding between the ceramic and the metal layers is performed by using the tin solder with the same purity, while in example 1, the welding is performed by using the indium solder, the bonding strength of the three-layer target assembly obtained in example 5 is only 3.3MPa, and the welding bonding rate is only 78.1%, which indicates that the better bonding strength between the target layers can be obtained by using the indium solder with better wettability to both the ceramic and the metal;
(4) As can be seen from the combination of example 1 and example 6, in example 6, compared with example 1, the temperature during heating is 220 ℃, the welding heating temperature of example 1 is 180 ℃, the bonding strength of the three-layer target assembly obtained in example 6 is only 5.9MPa, and the welding bonding rate is only 84.8%, so that the welding flux is fully bonded with the target by adopting the heating temperature in the preferred range, and the better bonding strength between the target layers is obtained;
(5) As can be seen from the combination of example 1 and comparative example 1-2, comparative examples 1 and 2 are not subjected to primary infiltration and secondary infiltration, respectively, but are subjected to primary infiltration and secondary infiltration simultaneously in example 1, and the three-layer target assembly obtained in comparative examples 1 and 2 has bonding strength of only 0.9MPa and 2.4MPa, respectively, and welding bonding rate of only 30.4% and 48.5%, respectively, thus showing that the method can sufficiently bond the solder with the target by performing the two-time infiltration of the solder to obtain a stable and qualified ceramic-metal-ceramic three-layer structure target.
In summary, the method for welding the ceramic target with the three-layer structure provided by the invention provides a method for soaking high-purity indium solder for welding aiming at binding of ceramic-metal composite targets with complex welding structures, reduces welding cost on the premise of ensuring welding quality, and is suitable for industrial production.
The applicant declares that the above is only a specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and it should be apparent to those skilled in the art that any changes or substitutions that are easily conceivable within the technical scope of the present invention disclosed by the present invention fall within the scope of the present invention and the disclosure.
Claims (14)
1. A method for welding a ceramic target with a three-layer structure, which is characterized by comprising the following steps:
(1) Under the heating condition, carrying out first infiltration on the component, wherein the component comprises a ceramic target blank, a metal middle layer and a ceramic back plate;
(2) After the first infiltration of the assembly is completed, taking the ceramic backboard as a solder pool, buckling the metal middle layer on the ceramic backboard, applying pressure to the edge of the metal middle layer, and supplementing solder after the buckling is completed, so that the liquid level of the solder is higher than that of the metal middle layer, and carrying out second infiltration on the metal middle layer;
(3) After the second infiltration of the metal intermediate layer is finished, buckling the ceramic target blank on the metal intermediate layer, applying pressure to the ceramic target blank, and integrally cooling after buckling to obtain the ceramic target material with the three-layer structure;
the heating temperature in the step (1) is 160-200 ℃;
polishing, cleaning and drying the two welding surfaces of the metal intermediate layer before heating; the material of the metal intermediate layer in the step (1) comprises titanium;
The first infiltration and the second infiltration are both made of solder as infiltration liquid, and the types of the solder comprise indium solder.
2. The method of claim 1, wherein the indium solder has a purity of 99.99% or greater.
3. The method of claim 1, wherein the cleaning solution is an organic solvent.
4. The method of claim 1, wherein the first infiltration comprises the steps of:
And (3) using a steel brush to infiltrate the two welding surfaces of the metal intermediate layer at least twice, and simultaneously using ultrasonic waves to infiltrate the ceramic target blank, the metal intermediate layer and the ceramic backboard.
5. The method of claim 4, wherein the intensity of the ultrasonic wave in the first immersion in step (1) is not less than 300W.
6. The method of claim 4, wherein the time of the ultrasonic waves in the first immersion in step (1) is 10 to 30 minutes.
7. The method of claim 1, wherein the method of applying pressure to the edges of the metal intermediate layer in step (2) comprises pressing the edges of the metal intermediate layer using a bead.
8. The method of claim 1, wherein the solder in step (2) has a liquid level 1-3mm above the metal intermediate layer.
9. The method of claim 1, wherein the second infiltrating in step (2) comprises ultrasonic infiltration.
10. The method of claim 9, wherein the intensity of the ultrasonic wave in the second immersion in step (2) is not less than 300W.
11. The method of claim 9, wherein the second immersion ultrasonic wave in step (2) takes less than or equal to 1 minute.
12. The method of claim 1, wherein the method of applying pressure to the ceramic target blank in step (3) comprises placing the ceramic target blank using a compact.
13. The method of claim 12, wherein the pressure generated by placement of the compact on the ceramic target blank in step (3) is 0.003-0.01MPa.
14. The method according to claim 1, characterized in that it comprises the steps of:
(1) Polishing two welding surfaces of the metal intermediate layer, cleaning with an organic solvent and drying; heating to 160-200 ℃, and performing first infiltration on the ceramic target blank, the metal intermediate layer and the ceramic backboard, wherein the first infiltration comprises the steps of using a steel brush to infiltrate two welding surfaces of the metal intermediate layer at least twice, and simultaneously using ultrasonic waves which are more than or equal to 300W to infiltrate the ceramic target blank, the metal intermediate layer and the ceramic backboard for 10-30 min;
(2) After the first infiltration of the assembly is completed, taking the ceramic backboard as a solder pool, buckling the metal middle layer onto the ceramic backboard, pressing the edge of the metal middle layer by using a pressing bar to ensure that the metal middle layer does not shake, supplementing solder after buckling is completed, enabling the liquid level of the solder to be 1-3mm higher than that of the metal middle layer, and carrying out second infiltration of less than or equal to 1min on the metal middle layer by using ultrasonic waves of more than or equal to 300W;
(3) After the second infiltration of the metal intermediate layer is finished, buckling the ceramic target blank on the metal intermediate layer, and placing the ceramic target blank on the ceramic target blank by using a pressing block under the pressure of 0.003-0.01MPa, and integrally cooling after the buckling is finished to obtain the ceramic target material with the three-layer structure;
The first infiltration and the second infiltration are both made of indium solder with the purity of more than or equal to 99.99 percent as infiltration liquid.
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