CN114939953B - High-temperature packaging device capable of actively inhibiting silicon carbide expansion - Google Patents
High-temperature packaging device capable of actively inhibiting silicon carbide expansion Download PDFInfo
- Publication number
- CN114939953B CN114939953B CN202210446211.2A CN202210446211A CN114939953B CN 114939953 B CN114939953 B CN 114939953B CN 202210446211 A CN202210446211 A CN 202210446211A CN 114939953 B CN114939953 B CN 114939953B
- Authority
- CN
- China
- Prior art keywords
- packaging
- layer
- die plate
- cavity
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 189
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 21
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 230000002401 inhibitory effect Effects 0.000 title description 7
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 239000000463 material Substances 0.000 claims abstract description 48
- 238000003825 pressing Methods 0.000 claims abstract description 48
- 238000002347 injection Methods 0.000 claims abstract description 27
- 239000007924 injection Substances 0.000 claims abstract description 27
- 239000005022 packaging material Substances 0.000 claims abstract description 27
- 238000001816 cooling Methods 0.000 claims abstract description 13
- 238000007493 shaping process Methods 0.000 claims abstract description 13
- 238000000605 extraction Methods 0.000 claims abstract description 4
- 238000005538 encapsulation Methods 0.000 claims description 11
- 239000000498 cooling water Substances 0.000 claims description 7
- 238000007711 solidification Methods 0.000 claims description 7
- 230000008023 solidification Effects 0.000 claims description 7
- 238000005192 partition Methods 0.000 claims description 3
- 230000000452 restraining effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 158
- 238000010438 heat treatment Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 239000011347 resin Substances 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 239000000835 fiber Substances 0.000 description 6
- 230000017525 heat dissipation Effects 0.000 description 6
- 239000002356 single layer Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/0046—Details relating to the filling pattern or flow paths or flow characteristics of moulding material in the mould cavity
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/17—Component parts, details or accessories; Auxiliary operations
- B29C45/26—Moulds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C2045/14852—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles incorporating articles with a data carrier, e.g. chips
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C2045/1486—Details, accessories and auxiliary operations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/17—Component parts, details or accessories; Auxiliary operations
- B29C45/26—Moulds
- B29C2045/2697—Deformed geometry of the cavity
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The application discloses a high-temperature packaging device for actively restraining silicon carbide expansion, which is characterized in that a plurality of packaging layers are constructed on a chip substrate, new packaging layer materials are injected after each packaging layer is cooled and shaped, a thermal interface is constructed between each packaging layer to cause thermal resistance, the thermal expansion of the plurality of packaging layers is split, an external packaging layer is used for carrying out thermal expansion restraint on an internal packaging layer, and the thermal expansion degree of the silicon carbide substrate and a chip core on the silicon carbide substrate is actively restrained. The packaging device comprises a pressing mold and a material injection pipe, wherein a sealed packaging cavity is formed in the pressing mold, the material injection pipe is connected to the pressing mold and penetrates into the packaging cavity, the volume of the packaging cavity is variable, and the packaging cavity has at least three-level volume values. Or the pressing die is arranged on the gyro frame, the injection pipe is provided with independent injection pressure facing the packaging cavity and extraction negative pressure facing away from the packaging cavity, the packaging device is used for preparing a plurality of packaging layers by attaching packaging materials for a plurality of times and cooling, and the gyro frame rotates in the cooling and shaping process of each packaging layer.
Description
Technical Field
The application relates to the technical field of chip packaging, in particular to a high-temperature packaging device capable of actively inhibiting silicon carbide from expanding.
Background
The chip mainly comprises a chip core, a substrate, bonding leads, pins and a packaging layer, wherein the chip core is firstly arranged on the substrate through the leads, then the external pins are welded, and then the chip core is put into packaging equipment, the packaging layer is wrapped outside the chip substrate to protect the internal chip core and the substrate, and the packaged chip can be packaged and put into storage after being tested.
At present, a plurality of packaging modes exist for chips, packaging materials are different, ceramic, glass, metal and resin can be used as packaging materials according to requirements, wherein the resin material is the packaging material which is most widely used in small chips and single-function chips, no matter what packaging material is, the thermal expansion coefficient of the resin material is different from that of a chip core and a substrate manufactured by semiconductor materials, the substrate is often made of silicon carbide material, the thermal expansion coefficient of the resin packaging material is quite different from that of silicon carbide, when the chip is actually used, if the core temperature is higher than a certain degree, the difference of thermal expansion amounts among all parts in the chip is larger than a certain degree, and stress crystal cracking and the like are easy to cause damage and failure of the chip.
Therefore, how to reduce the thermal expansion of the packaging layer so as to provide larger inward pressing force for the silicon carbide substrate is a packaging quality improving mode which can be considered in the field of chip packaging, so that the high-temperature working performance of the chip can be improved.
Disclosure of Invention
The present application is directed to a high temperature packaging device for actively suppressing expansion of silicon carbide, so as to solve the above-mentioned problems in the prior art.
In order to solve the technical problems, the application provides the following technical scheme:
the high-temperature packaging device actively inhibits the expansion of silicon carbide, the packaging device constructs a plurality of packaging layers on a chip substrate, after each packaging layer is cooled and shaped, new packaging layer materials are injected, a thermal interface is constructed between each packaging layer to cause thermal resistance, the thermal expansion of the plurality of packaging layers is split, the external packaging layers are used for carrying out thermal expansion constraint on the internal packaging layers, and the thermal expansion degree of the silicon carbide substrate and the upper chip core of the silicon carbide substrate is actively inhibited.
The preparation of the multi-layer packaging layer can be realized by a pressing mold with a variable-volume packaging cavity or by multi-layer coating packaging materials and cooling and shaping.
As a specific technical scheme of the application:
the high temperature packaging device for actively inhibiting silicon carbide expansion comprises a pressing mold, a material injection pipe, a sealed packaging cavity constructed in the pressing mold, the material injection pipe connected to the pressing mold and penetrating into the packaging cavity,
the volume of the packaging cavity is variable, and the packaging cavity has at least three levels of volume values.
The chip substrate is placed into the pressing mold, the pins are supported and fixed, the pressing mold is internally filled with the packaging material, the packaging material wraps the chip substrate to form a packaging layer, the volume change of the packaging cavity can be used for carrying out a plurality of packaging processes on the chip, a multi-stage packaging layer with an interface can be generated, the inner packaging layer closest to the chip substrate is tightly combined with the chip, the multi-stage packaging layer is provided with a thermal interface, the temperature of the multi-stage packaging layer is not integral, a certain temperature difference exists on the thermal interface, the chip substrate heats and is transmitted outwards in the subsequent use process of the chip, if the chip is a chip with large heating value, a heat dissipation guide column is generally arranged to guide the chip with large heating value to a heat dissipation part, if the chip with small heating value is a chip with small heating value, the chip is generally transmitted directly to the packaging layer and finally transmitted to the outer surface of the packaging layer to carry out natural air cooling, and the packaging layer is expected to have smaller thermal expansion to be coordinated with the thermal expansion of the chip, so that the heat of the packaging layer with the inner packaging layer is transmitted outwards, the packaging layer with the thermal expansion of the inner layer has thermal resistance, and the packaging layer has smaller thermal expansion than the inner layer, the packaging layer and the packaging layer can not fully release the thermal expansion of the chip in the chip with the largest heating value, and the chip is not damaged in the chip with the chip expansion value, and the chip is not damaged due to the chip expansion value.
The thickness of the multi-layer packaging layer caused by each level of volume difference is gradually increased from the inner wall to the outer wall, so that the innermost packaging layer and the chip substrate are more easily formed into a whole with similar thermal expansion, and the binding effect of the outer packaging layer on the inner layer is enhanced.
Further, the pressing mold comprises a first mold plate, a second mold plate, a third mold plate and pressing driving, the second mold plate and the third mold plate sequentially encircle the first mold plate, the third mold plate is completely combined during packaging, the first mold plate is partially combined during packaging, the first mold plate, the second mold plate and the third mold plate jointly construct a packaging cavity, and the first mold plate, the second mold plate and the third mold plate are respectively provided with independent pressing driving. The three groups of templates can realize the packaging cavity with the three-level variable volume which is the most basic, and the involution degree of the first template and the second template is adjusted to construct the second-level volume.
Further, the pressing mold further comprises positioning rabbets, wherein the positioning rabbets are respectively arranged on the second template and the third template, and the positioning rabbets respectively restrict the relative limit positions between the first template and the second template as well as between the second template and the third template.
The positioning spigot determines the limit positions of the first template and the second template when the packaging cavity is adjusted, the pressing driving is only required to be linearly moved, and the positions of the three templates can be realized by arranging displacement sensors on the pressing driving.
As another specific technical scheme of the application:
the high-temperature packaging device for actively inhibiting the expansion of the silicon carbide comprises a pressing mold, a material injection pipe and a gyroscope frame, wherein a closed packaging cavity is formed in the pressing mold, the material injection pipe is connected to the pressing mold and penetrates into the packaging cavity, the pressing mold is arranged on the gyroscope frame, the material injection pipe is provided with independent injection pressure facing the packaging cavity and extraction negative pressure facing away from the packaging cavity, the packaging device is used for preparing a plurality of packaging layers by attaching packaging materials on a chip substrate for many times and cooling, and the gyroscope frame rotates in the cooling and shaping process of each packaging layer.
The chip substrate to be packaged is placed in the packaging cavity, the pins are erected and fixed, the liquid packaging material is injected into the packaging cavity through the material injection pipe, after the chip substrate is fully infiltrated, the material which is not adhered to the chip substrate in the packaging cavity is led out from the material injection pipe, the packaging material adhered to the chip substrate is used as an innermost packaging layer, after the innermost packaging layer is fully solidified, new material is injected from the material injection pipe to prepare an intermediate packaging layer, finally, the packaging material is completely injected to prepare a chip packaging surface matched with the inner surface of the packaging cavity, and the gyro frame is continuously rotated in the solidification process of each packaging layer, so that the inner thickness of each packaging layer is uniform.
Further, the rotating axis of the gyro frame in the solidification and shaping process of two adjacent packaging layers is vertical.
The different rotation directions of the gyro frame can enable each layer of packaging layer material to flow on the packaging surface in different directions before solidification, when the resin serving as the packaging material is solidified, part of the resin is pre-solidified into fiber, all solidified fibers are shaped along the rotation directions, the fiber directions are material tracks, the flow of the packaging material causes different material tracks, and the heat conduction coefficient in the track directions is slightly larger than the heat conduction coefficient perpendicular to the track directions, so that if the track directions of the two layers of packaging layers are perpendicular, the heat resistance is enhanced on a heat interface, and the heat interface of the different packaging layers is more obvious. The expansion limit of the outer encapsulation layer to the inner encapsulation layer is raised.
Further, the gyro frame reciprocates and shakes along the left and right sides of the rotating advancing direction when the packaging layer is constructed in each rotation.
When each packaging layer is solidified and shaped, part of materials are semi-solidified in advance and have larger adhesion effect, and the rest of materials keep larger fluidity, so that the gyroscope frame can shake and adhere materials which are not strong in fluidity to materials which are already semi-solidified and shaped, so that parallel strip-shaped bulges and pits distributed along the rotation direction are formed, the parallel strip-shaped bulges and pits can be called layer lines, the layer line direction of each packaging layer is related to the rotation direction of the gyroscope frame when the packaging layer is shaped, the rotation direction of the gyroscope frame is vertical when two adjacent packaging layers are shaped, the layer lines of the two adjacent layers are vertical, the temperature of the inner packaging layer is slightly higher than that of the packaging layer of the outer adjacent layer when the chip is used later, the inner packaging layer is expected to stretch the packaging layer of the outer adjacent layer, but because the layer lines exist on the packaging layer, the line direction is different, the expansion of the inner packaging layer is along the smaller tensile strength direction on the outer adjacent layer, the expansion of the inner packaging layer is larger strength direction, the expansion of the inner packaging layer can be restrained by the expansion of the inner packaging layer, and the expansion of the inner packaging layer is restrained by the thermal expansion of the substrate is restrained more greatly.
Further, the packaging device further comprises an ultrasonic generator, wherein the ultrasonic generator is arranged on the inner wall surface of the pressing die, and the ultrasonic generator emits ultrasonic waves towards the chip substrate.
At the packaging position irradiated by ultrasonic waves, packaging materials are easier to drill into gaps of the chip substrate, and the chip substrate is fully wrapped to form a packaging layer.
Furthermore, cooling water flows which are independently controlled by the partition are arranged in the wall thickness of the pressing die. The cooling water cools the shaping of the last packaging layer, and according to the distribution of components on the chip substrate, the packaging layer with larger wall thickness is provided with larger cooling water flow, so that the cooling shaping speed of the whole packaging layer tends to be uniform.
Compared with the prior art, the application has the following beneficial effects: according to the application, multiple material injection packaging is performed through the packaging cavity with the variable volume, a plurality of packaging layers are constructed on the chip substrate, and thermal interfaces are arranged among the packaging layers, so that the thermal expansion degree of each packaging layer is inconsistent, the packaging layer at the outer layer has an inward extrusion binding effect on the inner layer, the thermal expansion of the chip substrate is inhibited, and interface bonding stress caused by the difference of the thermal expansion of the chip substrate and the packaging layer at the innermost layer is prevented;
the application also provides another construction mode of the multi-layer packaging layer, the packaging material is injected and then extracted, the layer-by-layer adhesion material is cooled and shaped, the material in the layer thickness of each packaging layer is uniform through the rotation of the gyroscope frame in each shaping process, the gyroscope frame rotates in the direction of rotation when the packaging layer is constructed, the post-cured material is adhered to the pre-cured material, each packaging layer is provided with parallel strip-shaped lines, the lines of the adjacent packaging layers are different, and the directions of the maximum tensile strength of each packaging layer are mutually perpendicular when the chip is used later, so that the maximum release direction of the thermal expansion of each layer is mutually limited, and the thermal expansion of the inner chip substrate and the upper core of the inner chip substrate is resisted together.
Drawings
The accompanying drawings are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate the application and together with the embodiments of the application, serve to explain the application. In the drawings:
FIG. 1 is a schematic view of a first embodiment of the present application;
FIG. 2 is a schematic view of the structure of an embodiment of the present application in another state;
FIG. 3 is a schematic diagram of a second embodiment of the present application;
FIG. 4 is a schematic diagram of the structure of a chip part obtained by the encapsulation of the present application;
FIG. 5 is a schematic diagram of a package layer with a layer pattern obtained by a second embodiment of the present application;
in the figure: 1-pressing mold, 11-first template, 12-second template, 13-third template, 14-pressing drive, 15-positioning spigot, 2-packaging cavity, 3-feeding pipe, 4-gyro frame, 5-ultrasonic generator, 9-chip part, 91-chip substrate, 92-packaging layer and 93-layer grain.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Referring to fig. 1-5, the present application provides the following technical solutions:
embodiment one:
the high-temperature packaging device for actively inhibiting the expansion of silicon carbide comprises a pressing mold 1 and a material injection pipe 3, wherein a sealed packaging cavity 2 is constructed in the pressing mold 1, the material injection pipe 3 is connected to the pressing mold 1 and penetrates into the packaging cavity 2,
the enclosure 2 has a variable volume, the enclosure 2 having at least three levels of volume.
As shown in fig. 1, 2 and 4, the chip substrate 91 is placed into the press mold 1, the pins are supported and fixed, the press mold 1 is filled with packaging material, the packaging material wraps the chip substrate 91 to form a packaging layer 92, the multi-layer packaging layer 92 wraps the chip substrate 91 to form a chip part 9 together, the chip part 9 is electrified for testing and warehouse entry after the shape is fixed,
the volume change of the package cavity 2 may be a multiple-time packaging process of the chip, a multi-stage package layer 92 with an interface may be generated, the inner package layer 92 closest to the chip substrate 91 and the chip are tightly combined, the multi-stage package layer 92 has a thermal interface, the temperature of which is not an integral body, a certain temperature difference exists on the thermal interface, during the subsequent use process of the chip, the chip substrate 91 heats and transfers outwards, if the chip with a large heating value is a chip with a large heating value, a heat dissipation guiding column is generally arranged to guide the chip to a heat dissipation component, if the chip with a small heating value is a chip with a small heating value, the heat dissipation guiding column is generally directly transferred to the package layer 92 and finally transferred to the outer surface of the package layer for natural air cooling, and for both cases, the package layer is expected to have less thermal expansion so as to coordinate with the thermal expansion of the chip, so that the heat of the innermost package layer is transferred outwards, and the outer package layer has less thermal expansion than the inner layer, so that the inner package layer and the innermost chip substrate is bound on the core, and the heat expansion of the chip substrate cannot be fully released, and the difference between the chip substrate and the innermost package layer 92 is not damaged.
The thermal power of the chip is taken as a constant value for analysis when the chip is in operation, for example, the surface temperature of the packaged chip corresponding to the thermal power needs to reach 60 ℃ to perform a balanced heat dissipation process, in the traditional single-layer packaging structure, the temperature difference between the core of the chip and the surface of the chip is 20 ℃, namely the core temperature is 80 ℃, after the thermal expansion of the packaging layer of the single-layer packaging structure is higher than that of the chip substrate 91 to a certain extent, the interface stress between the inner surface of the single-layer packaging structure and the chip substrate 91 is about to damage the interface connectivity,
in the structure of the present application, the temperature difference between the core and the outer surface of the chip is increased to a few, for example, 5 ℃, when the outer surface is 60 ℃, the core is 85 ℃, it should be noted that the bearing temperature of the chip is the temperature at which the chip package or the inner wire bonding fails, rather than the higher the core temperature, the more prone to failure, and when the core is 85 ℃, the corresponding temperature of the innermost package layer is higher than that of the single-layer package layer, but only the thermal expansion of the chip substrate and the innermost package layer is greater than that of the single-layer package layer, and the thermal expansion of the outer package layer and that of the single-layer package layer are basically no difference, so that the thermal expansion of the chip substrate 91 and the innermost package layer 92 cannot be fully released, because the outer package layer 92 is not fully expanded to provide an inner space, the bonding between the inner package layer and the chip substrate is still tight, so that the chip has stronger bearing capacity for temperature, and the expansion of the silicon carbide substrate is restrained by actively constructing a structure that the inner constraint expansion of the chip.
The pressing mold 1 comprises a first mold plate 11, a second mold plate 12, a third mold plate 13 and a pressing drive 14, wherein the second mold plate 12 and the third mold plate 13 sequentially encircle the first mold plate 11, the third mold plate 13 is completely combined during packaging, the first mold plate 11 is partially combined during packaging, the first mold plate 11, the second mold plate 12 and the third mold plate 13 jointly construct the packaging cavity 2, and the first mold plate 11, the second mold plate 12 and the third mold plate 13 are respectively provided with independent pressing drives 14. As shown in fig. 1 and 2, three groups of templates can realize the packaging cavity 2 with three-level variable volume which is the most basic, fig. 1 is the minimum volume, fig. 3 is the maximum volume, and the second-level volume is constructed by adjusting the involution degree of the first template 11 and the second template 12.
The pressing mold 1 further comprises positioning rabbets 15, wherein the positioning rabbets 15 are respectively arranged on the second template 12 and the third template 13, and the positioning rabbets 15 respectively restrict the relative limit positions between the first template 11 and the second template 12 as well as between the second template 12 and the third template 13.
As shown in fig. 1 and 2, the positioning spigot 15 determines the limit positions of the first template 11 and the second template 12 when the packaging cavity 2 is adjusted, the pressing drive only needs to perform linear movement, and the positions of the three templates can also be realized by arranging displacement sensors on the pressing drive 14.
Embodiment two:
the active high-temperature encapsulation device for inhibiting the expansion of the silicon carbide comprises a pressing die 1, a material injection pipe 3 and a gyroscope frame 4, wherein a closed encapsulation cavity 2 is constructed in the pressing die 1, the material injection pipe 3 is connected to the pressing die 1 and penetrates into the encapsulation cavity 2,
the pressing die 1 is mounted on the gyroscope frame 4, the injection pipe 3 has independent injection pressure towards the packaging cavity 2 and extraction negative pressure back to the packaging cavity 2,
the packaging device is used for preparing a plurality of packaging layers 92 by attaching packaging materials on the chip substrate 91 for a plurality of times and cooling, and the gyroscope frame 4 rotates in the cooling and shaping process of each packaging layer 92.
As shown in fig. 3, a chip substrate 91 to be packaged is placed in a packaging cavity 2, pins are set up and fixed, a liquid packaging material is injected into the packaging cavity 2 by a material injection pipe 3, after the chip substrate 91 is fully infiltrated, materials which are not adhered to the chip substrate 91 in the packaging cavity 2 are led out from the material injection pipe 3, the packaging material adhered to the chip substrate 91 is used as an innermost packaging layer 92, after the innermost packaging layer 92 is fully solidified, new materials are injected from the material injection pipe 3 for preparing an intermediate packaging layer 92, finally, the packaging material is completely injected for preparing a chip packaging surface matched with the inner surface of the packaging cavity 2, and the gyro frame 4 continuously rotates in the solidification process of each packaging layer 92, so that the inner thickness of each packaging layer 92 is uniform.
The rotation axis of the gyro frame 4 is vertical in the solidification and shaping process of the two adjacent packaging layers 92.
The different rotation directions of the gyro frame 4 can enable each layer of packaging layer material to flow on the packaging surface in different directions before solidification, when the resin serving as the packaging material is solidified, part of the resin is pre-solidified into fiber, all solidified fibers are shaped along the rotation directions, the fiber directions are material tracks, the flow of the packaging material causes different material tracks, and the heat conduction coefficient in the track directions is slightly larger than the heat conduction coefficient perpendicular to the track directions, so that if the track directions of the two layers of packaging layers are perpendicular, the heat resistance is enhanced on the heat interface, and the heat interface of the different packaging layers is more obvious. The expansion limit of the outer encapsulation layer 92 to the inner encapsulation layer is raised.
The gyro frame 4 reciprocates in the rotation advancing direction on both right and left sides each time the package layer 92 is constructed by rotation.
As shown in fig. 3 and 5, when each of the packaging layers 92 is solidified and shaped, a part of the materials are semi-solidified in advance and have a larger adhesion effect, and the rest of the materials keep a larger fluidity, so that the gyro frame 4 is rotated in a main direction and shakes left and right, the material with higher fluidity can be shaked and adhered to the material which is already semi-solidified and shaped, so as to form a plurality of parallel strip-shaped protrusions and depressions distributed along the rotation direction, which can be called layer lines 93, the direction of the layer lines 93 of each packaging layer 92 is related to the rotation direction of the gyro frame 4 when the packaging layers 92 are shaped, the rotation direction of the gyro frame 4 is vertical when the two adjacent packaging layers 92 are shaped, and thus the layer lines 93 of the two adjacent layers are vertical to form a state on fig. 5, and when the chip is used later, the temperature of the inner packaging layer 92 is slightly higher than that of the outer adjacent packaging layer 92 is expected to be stretched, however, the inner packaging layer 92 has the layer lines 93 which are different in the direction of lines, and the expansion of the inner packaging layer 92 is restrained in the direction of the lower strength, and the expansion of the inner packaging layer 92 is restrained in the direction of the larger than the inner packaging layer 92. Fig. 5 shows that the layer lines 93 are uniformly distributed and the protrusions and depressions are large for convenience of illustration.
The packaging device further includes an ultrasonic generator 5, the ultrasonic generator 5 is disposed on the inner wall surface of the press mold 1, and the ultrasonic generator 5 emits ultrasonic waves toward the chip substrate 91.
At the packaging position irradiated by ultrasonic waves, packaging materials are easier to drill into gaps of the chip substrate 91, and fully wrap the chip substrate 91 to form the packaging layer 92.
The wall thickness of the pressing die 1 is internally provided with cooling water flow which is independently controlled by a partition. The cooling water cools the final shaping of the package layer 92, and according to the distribution of the components on the chip substrate 91, a larger cooling water flow is provided for the package layer 92 with a larger wall thickness, so that the cooling shaping speed of the whole package layer 92 tends to be uniform.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Finally, it should be noted that: the foregoing description is only a preferred embodiment of the present application, and the present application is not limited thereto, but it is to be understood that modifications and equivalents of some of the technical features described in the foregoing embodiments may be made by those skilled in the art, although the present application has been described in detail with reference to the foregoing embodiments. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the protection scope of the present application.
Claims (3)
1. The utility model provides an active high temperature packaging hardware who restraines carborundum inflation which characterized in that: the packaging device comprises a pressing mold (1), a material injection pipe (3) and a gyroscope frame (4), wherein a closed packaging cavity (2) is built in the pressing mold (1), the material injection pipe (3) is connected to the pressing mold (1) and extends into the packaging cavity (2),
the pressing die (1) is arranged on the gyroscope frame (4), the injection pipe (3) is provided with an independent injection pressure facing the packaging cavity (2) and an extraction negative pressure facing away from the packaging cavity (2),
the packaging device is characterized in that packaging materials are attached to a chip substrate (91) for multiple times, a plurality of packaging layers (92) are prepared through cooling, and a gyro frame (4) rotates in the cooling and shaping process of each packaging layer (92);
the pressing die (1) comprises a first die plate (11), a second die plate (12), a third die plate (13) and a pressing drive (14), wherein the second die plate (12) and the third die plate (13) sequentially encircle the first die plate (11), the third die plate (13) is completely combined during packaging, the first die plate (11) is partially combined during packaging, the first die plate (11), the second die plate (12) and the third die plate (13) jointly construct a packaging cavity (2), and the first die plate (11), the second die plate (12) and the third die plate (13) are respectively provided with independent pressing drives (14);
the rotating axis of the gyro frame (4) is vertical in the solidification and shaping process of two adjacent packaging layers (92);
the gyro frame (4) reciprocates on the left and right sides in the direction of rotation advance when the encapsulation layer (92) is constructed in each rotation.
2. The high temperature encapsulation device for actively suppressing silicon carbide expansion according to claim 1, wherein: the packaging device further comprises an ultrasonic generator (5), the ultrasonic generator (5) is arranged on the inner wall surface of the pressing die (1), and the ultrasonic generator (5) emits ultrasonic waves towards the chip substrate (91).
3. The high temperature encapsulation device for actively suppressing silicon carbide expansion according to claim 2, wherein: and cooling water flow which is independently controlled by a partition is arranged in the wall thickness of the pressing mold (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210446211.2A CN114939953B (en) | 2022-04-26 | 2022-04-26 | High-temperature packaging device capable of actively inhibiting silicon carbide expansion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210446211.2A CN114939953B (en) | 2022-04-26 | 2022-04-26 | High-temperature packaging device capable of actively inhibiting silicon carbide expansion |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114939953A CN114939953A (en) | 2022-08-26 |
| CN114939953B true CN114939953B (en) | 2023-08-29 |
Family
ID=82906918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210446211.2A Active CN114939953B (en) | 2022-04-26 | 2022-04-26 | High-temperature packaging device capable of actively inhibiting silicon carbide expansion |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114939953B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4387762A (en) * | 1980-05-22 | 1983-06-14 | Massachusetts Institute Of Technology | Controllable heat transfer device |
| CN104583081A (en) * | 2012-08-27 | 2015-04-29 | 三菱瓦斯化学株式会社 | Packaging method for granular substance and device for packaging granular substance |
| CN207578910U (en) * | 2017-08-25 | 2018-07-06 | 南通通州湾新材料科技有限公司 | The injection die cavities structure and its mold of a kind of phone housing quadric injection mould mold |
| CN210820442U (en) * | 2019-10-14 | 2020-06-23 | 李成蛟 | Split type silica gel forming die |
| CN112117203A (en) * | 2019-10-23 | 2020-12-22 | 中芯集成电路（宁波）有限公司上海分公司 | Packaging method and packaging structure |
-
2022
- 2022-04-26 CN CN202210446211.2A patent/CN114939953B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4387762A (en) * | 1980-05-22 | 1983-06-14 | Massachusetts Institute Of Technology | Controllable heat transfer device |
| CN104583081A (en) * | 2012-08-27 | 2015-04-29 | 三菱瓦斯化学株式会社 | Packaging method for granular substance and device for packaging granular substance |
| CN207578910U (en) * | 2017-08-25 | 2018-07-06 | 南通通州湾新材料科技有限公司 | The injection die cavities structure and its mold of a kind of phone housing quadric injection mould mold |
| CN210820442U (en) * | 2019-10-14 | 2020-06-23 | 李成蛟 | Split type silica gel forming die |
| CN112117203A (en) * | 2019-10-23 | 2020-12-22 | 中芯集成电路（宁波）有限公司上海分公司 | Packaging method and packaging structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114939953A (en) | 2022-08-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10186431B2 (en) | Integrated circuit package mold assembly | |
| JP3956335B2 (en) | Semiconductor device manufacturing method using resin casting mold | |
| CN114939953B (en) | High-temperature packaging device capable of actively inhibiting silicon carbide expansion | |
| CN103600053B (en) | Accurate forming tool of aluminum silicon carbide composite IGBT (insulated gate bipolar translator) baseplate | |
| KR20080036980A (en) | A method of manufacturing a semiconductor device | |
| US6187613B1 (en) | Process for underfill encapsulating flip chip driven by pressure | |
| US9646857B2 (en) | Low pressure encapsulant for size-reduced semiconductor package | |
| CN109285812A (en) | A kind of ltcc substrate manufacturing method of two-sided multi-step cavity | |
| CN107639222A (en) | A kind of Casting Equipment and casting pouring method | |
| CN112829161B (en) | Foaming glue filling method for composite material honeycomb sandwich structure | |
| CN108788093A (en) | A kind of melt for multidigit parallel connection compression casting device rises liquid device | |
| CN206864451U (en) | A kind of anticracking notching construction of two-sided copper foil package substrate | |
| CN104802493A (en) | Bag capsule type pressurized packaging laminating machine | |
| US11732687B2 (en) | Manufacturing of a wind turbine rotor blade | |
| CN108735489A (en) | The encapsulating method of electromagnetic transmission component | |
| JPH06285898A (en) | Transfer mold with balanced runner and its production | |
| CN209880580U (en) | Chip packaging body and electronic equipment thereof | |
| JP4218989B2 (en) | Mold for resin molding | |
| CN202241834U (en) | IC (integrated circuit) plastic packaging mold with low mold injection speed and high holding pressure | |
| JP2010192541A (en) | Resin sealing mold and resin sealing method | |
| CN202259231U (en) | Electronic device with low-thermal-stress organic substrate | |
| JPH09115937A (en) | Manufacture of semiconductor, mold device, and lead frame | |
| JP4764522B2 (en) | How to repair honeycomb sandwich panels | |
| JPH02260547A (en) | Resin sealing of electronic component, mold for resin sealing and electronic component sealing molding | |
| JP3221971B2 (en) | Resin molding equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |