CN114938207B - Broadband Josephson parametric amplifier chip combined by multiple sections of impedance converters - Google Patents
Broadband Josephson parametric amplifier chip combined by multiple sections of impedance converters Download PDFInfo
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- CN114938207B CN114938207B CN202210485720.6A CN202210485720A CN114938207B CN 114938207 B CN114938207 B CN 114938207B CN 202210485720 A CN202210485720 A CN 202210485720A CN 114938207 B CN114938207 B CN 114938207B
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- H—ELECTRICITY
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
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- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
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Abstract
The invention discloses a broadband Josephson parametric amplifier chip combined by a multisection impedance transformer, which relates to the technical field of amplifiers and comprises an input/output port, a first quarter wavelength impedance transformation line, a second quarter wavelength impedance transformation line, a third quarter wavelength impedance transformation line, a half wavelength waveguide transmission line, a superconductive Josephson junction nonlinear resonator and a bias circuit unit which are connected in sequence; the characteristic impedance of the second quarter-wavelength impedance transformation line is matched to the impedances of the 50 ohm transmission line and the first quarter-wavelength impedance transformation line, respectively. The amplifier chip provided by the invention has a simple structure and is easy to integrate, the impedance transformation part can be prepared by adopting a conventional planar waveguide micro-nano technology, and the load terminal impedance matching of the 50 ohm characteristic impedance of the external transmission line and the superconductive Josephson junction nonlinear resonator is realized by flexibly combining the increase and decrease and the type of the quarter-wavelength impedance transformation line (device).
Description
Technical Field
The invention relates to the technical field of amplifiers, in particular to a broadband Josephson parametric amplifier chip combined by a plurality of sections of impedance converters.
Background
The superconducting quantum information technology is a main scheme for realizing the research of quantum bits and microwave photon non-classical states at present, and for superconducting quantum bits and microwave photon non-classical states, the signal energy intensity is at a single photon level, and an amplifier with a single photon noise level is required for detection and amplification. The amplifying device based on the parameter principle can be flexibly designed by utilizing the superconducting non-dissipation, easy integration and nonlinear characteristics of the Josephson junction, and the device has unique low noise advantages in superconducting quantum bit single-shot measurement characterization and superconducting microwave single photon detection and application.
In the various schemes disclosed at present, the superconducting josephson parametric amplifier for realizing broadband amplification is generally formed by a nonlinear resonator formed by a capacitor and a superconducting quantum interferometer as equivalent inductors and an external impedance transformation structure, wherein the impedance transformation structure is used for reducing impedance mismatch between characteristic impedance of the nonlinear resonator and characteristic impedance of an external transmission line.
The traditional single-section coplanar waveguide type quarter wave transformer structure can reduce mismatch to a certain extent, but is limited by the structural characteristics and the process of the coplanar waveguide, the design and the processing of the two-section or multi-section coplanar waveguide type quarter wave transformer have extremely high requirements on circuit precision, on the basis, the impedance mismatch is further reduced very difficultly, and the cost and the process difficulty are increased sharply; impedance mismatch can be further reduced by the graded structured impedance transformation line, but the structural design is complex and the performance optimization is difficult, and it is generally difficult to reach the predetermined design index.
Based on this, there is a need for a broadband josephson parametric amplifier chip that combines planar circuit design and processing advantages, with small impedance mismatch and even perfect matching-a combination of multiple sections of impedance transformers.
Disclosure of Invention
The invention mainly aims to provide a broadband Josephson parametric amplifier chip combined by a plurality of sections of impedance converters, which realizes an impedance matching optimized planar circuit impedance structure by utilizing the plurality of sections of impedance conversion, and can form impedance matching with a nonlinear Josephson junction resonator by utilizing the circuit structure to form the broadband Josephson parametric amplifier with excellent performance.
The aim of the invention can be achieved by adopting the following technical scheme:
a broadband Josephson parametric amplifier chip combined by a plurality of sections of impedance converters,
the device comprises an input/output port, a first quarter-wavelength impedance transformation line, a second quarter-wavelength impedance transformation line, a third quarter-wavelength impedance transformation line, a half-wavelength waveguide transmission line, a superconductive Josephson junction nonlinear resonator and a bias circuit unit which are connected in sequence;
the characteristic impedance of the second quarter-wavelength impedance transformation line is respectively matched with the impedance of the 50 ohm transmission line and the impedance of the first quarter-wavelength impedance transformation line;
the characteristic impedance of the third quarter-wavelength impedance transformation line is respectively matched with the impedance of the first quarter-wavelength impedance transformation line and the second quarter-wavelength impedance transformation line;
the input/output port is used for inputting and outputting signals to be amplified through the signals to be amplified, and the signals to be amplified sequentially pass through a first quarter-wavelength impedance transformation line, a second quarter-wavelength impedance transformation line, a third quarter-wavelength impedance transformation line and a half-wavelength waveguide transmission line and enter the super-conductive Josephson junction nonlinear resonator;
the amplified signal is output from the superconductive Josephson junction nonlinear resonator, sequentially passes through a half-wavelength waveguide transmission line, a third quarter-waveguide impedance transformation line, a second quarter-waveguide impedance transformation line and a first quarter-waveguide impedance transformation line, and is output through the input/output port;
the bias circuit unit is used for providing a direct current signal for modulating the working frequency of the superconducting Josephson junction nonlinear resonator and inputting the direct current signal into the nonlinear resonator;
the superconductive Josephson junction nonlinear resonator is used for receiving the direct current signal and the pumping signal, converting the pumping signal energy into energy required by amplifying an input signal to be amplified, reflecting the amplified signal along an original path of the input signal line, and outputting the amplified signal through an input/output port.
Preferably, the bias circuit unit is further configured to provide a pump signal for modulating energy required for amplifying a signal by the superconducting josephson junction nonlinear resonator, and input the pump signal to the nonlinear resonator;
the superconductive Josephson junction nonlinear resonator is used for converting pump signal energy into amplified energy of an input signal to be amplified through frequency mixing, reflecting the amplified energy along a primary path of the input signal to be amplified and outputting the amplified energy through an input/output port;
the DC signal and the pumping signal are input to the superconductive Josephson junction nonlinear resonator through the bias circuit unit after being combined by the bias device.
Preferably, the first quarter-wavelength impedance transformation line realizes that the characteristic impedance of the external transmission line 50 ohm is matched with the characteristic impedance of the second quarter-wavelength impedance transformation line;
the second quarter-wavelength impedance transformation line realizes that the characteristic impedance of the first quarter-wavelength impedance transformation line and the characteristic impedance of the third quarter-wavelength impedance transformation line of the impedance transformation line are matched.
Preferably, the first quarter-wavelength impedance transformation line and the second quarter-wavelength impedance transformation line are respectively coplanar waveguide type impedance transformation lines, interdigital structure impedance transformation lines or multilayer stacked mixed structure impedance transformation lines of coplanar waveguide/lumped capacitor;
the third quarter-wave impedance transformation line is also an interdigital structure impedance transformation line or a multilayer stacked hybrid structure impedance transformation line of a coplanar waveguide/lumped capacitor.
Preferably, the interdigital impedance conversion wire is formed by combining a plurality of interdigital electrodes and a reference ground interdigital electrode which are connected to each other with a central conductor, and a gap between the interdigital electrode and the reference ground interdigital electrode.
Preferably, the impedance transformation line of the multilayer stacked mixed structure of the coplanar waveguide/the lumped capacitor comprises a coplanar waveguide transmission line, a dielectric layer and a metal polar plate, wherein the dielectric layer and the metal polar plate are placed on the coplanar waveguide transmission line.
Preferably, the working frequencies of the half-wavelength waveguide transmission line, the first quarter-wavelength impedance transformation line, the second quarter-wavelength impedance transformation line and the third quarter-wavelength impedance transformation line are all identical.
Preferably, the superconductive Josephson junction nonlinear resonator comprises a capacitor and a superconductive quantum interferometer.
Preferably, one end of the superconducting Josephson junction nonlinear resonator is grounded through a direct current superconducting quantum interferometer, and the other end of the superconducting Josephson junction nonlinear resonator is connected with a half-wavelength transmission line.
The beneficial technical effects of the invention are as follows:
1. the amplifier chip provided by the invention has a simple structure, is easy to integrate, and the impedance transformation part can be prepared by adopting a conventional planar waveguide micro-nano technology, and the characteristic impedance matching of the external transmission line 50 ohm and the terminal impedance of the nonlinear resonator is realized by the flexible combination of the increase and the decrease of the quarter-wavelength impedance transformation line (the device) and the types.
2. The quarter-wavelength impedance transformation part and the half-wavelength waveguide transmission line provided by the invention can be flexibly designed by adopting any combination or single structure of three types of coplanar waveguides, interdigital waveguides and coplanar waveguide/lumped capacitor mixed structures.
3. The amplifier provided by the invention can realize broadband amplification in a designed working frequency range, and can also adjust the optimal broadband amplification frequency range of the amplifier by adjusting the length of the impedance transformation part.
Drawings
FIG. 1 is a schematic diagram of an overall layout of an amplifier according to an embodiment of the invention;
FIG. 2 is a schematic diagram of an impedance transformation line of an interdigital structure, according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a coplanar waveguide/lumped capacitor hybrid structure in accordance with an embodiment of the invention;
fig. 4 is a schematic diagram of a superconducting josephson junction nonlinear resonator layout in accordance with an embodiment of the present invention;
FIG. 5 is a schematic layout of an embodiment in accordance with the invention;
FIG. 6 is a gain amplification schematic diagram of an embodiment according to the invention;
FIG. 7 is a schematic diagram of a second structural layout of an embodiment in accordance with the present invention;
FIG. 8 is a schematic diagram of a three-structure layout of an embodiment in accordance with the invention;
fig. 9 is a schematic diagram of a second gain according to an embodiment of the present invention.
In the figure: 101-input/output port, 102-first quarter wavelength impedance transformation line, 103-second quarter wavelength impedance transformation line, 104-third quarter wavelength impedance transformation line, 105-half wavelength waveguide transmission line, 106-superconducting josephson junction nonlinear resonator, 107-bias circuit unit, 201-reference ground interdigital electrode, 202-interdigital electrode, 203-center conductor, 204-interdigital impedance transformation line, 301-capacitor, 302-superconducting quantum interferometer, 303-bias line, 304-bias circuit input line, 305-superconducting josephson junction nonlinear resonator port connected with half wavelength transmission line, 306-superconducting josephson junction nonlinear resonator port connected with reference ground, 401-coplanar waveguide/lumped capacitor multilayer stacked hybrid structure impedance transformation line, 402-coplanar waveguide transmission line, 403-metal plate, 404-dielectric layer.
Detailed Description
In order to make the technical solution of the present invention more clear and obvious to those skilled in the art, the present invention will be described in further detail with reference to examples and drawings, but the embodiments of the present invention are not limited thereto.
As shown in fig. 1-9, the broadband josephson parametric amplifier chip combined by the multi-section impedance transformer provided in this embodiment,
the device comprises an input/output port 101, a first quarter-wavelength impedance transformation line 102, a second quarter-wavelength impedance transformation line 103, a third quarter-wavelength impedance transformation line 104, a half-wavelength waveguide transmission line 105, a superconductive Josephson junction nonlinear resonator 106 and a bias circuit unit 107 which are connected in sequence;
wherein the three quarter-wavelength impedance transformation lines meet impedance matching conditions and have the same frequency as the half-wavelength waveguide transmission line;
wherein one end of the first quarter-wavelength impedance transformation line 102 is connected to the input/output port 101, the other end is connected to the second quarter-wavelength impedance transformation line 103,
the characteristic impedance of the first quarter-wavelength impedance transformation line 102 meets the impedance matching design requirement, so that the characteristic impedance of the input/output port 101 and the characteristic impedance of the second quarter-wavelength impedance transformation line 103 are matched within the working bandwidth;
the superconducting Josephson junction nonlinear resonator consists of a plate capacitor and a (direct current) superconducting quantum interferometer 302, wherein the (direct current) superconducting quantum interferometer 302 consists of two superconducting Josephson junctions connected in parallel and a superconducting loop thereof;
the characteristic impedance of the second quarter-wavelength impedance transformation line 103 is matched to the impedances of the 50 ohm transmission line and the first quarter-wavelength impedance transformation line 102, respectively;
the characteristic impedance of the third quarter-wavelength impedance transformation line 104 is matched with the impedances of the first quarter-wavelength impedance transformation line 102 and the second quarter-wavelength impedance transformation line 103, respectively;
the impedance matching function is to make the signal passing through the transmission line pass through without reflection, so as to ensure the maximum energy of the signal to pass through the line without causing reflection loss; impedance mismatch can cause a portion of the signal energy to fail to pass through the transmission line, with reflection losses;
the other end of the second quarter-wavelength impedance transformation line 103 is connected to a third quarter-wavelength impedance transformation line 104,
the characteristic impedance of the second quarter-wavelength impedance transformation line 103 meets the impedance matching design requirement, so that the characteristic impedance of the first quarter-wavelength impedance transformation line 102 and the characteristic impedance of the third quarter-wavelength impedance transformation line 104 are matched within the working bandwidth;
the other end of the third quarter wavelength impedance transformation line 104 is connected to a half wavelength waveguide transmission line 105,
the characteristic impedance of the third quarter-wavelength impedance transformation line 104 meets the impedance matching design requirement, so that the characteristic impedance of the input/output port 101 and the impedance of the first quarter-wavelength impedance transformation line and the impedance of the second quarter-wavelength impedance transformation line are matched within the working bandwidth;
inputting a signal to be amplified to an input/output port 101, the signal sequentially passing through a first quarter-wavelength impedance transformation line 102, a second quarter-wavelength impedance transformation line 103, a third quarter-wavelength impedance transformation line 104, a half-wavelength waveguide transmission line 105, and entering a nonlinear resonator 106;
the signal to be amplified sequentially passes through 101-105 to enable the external transmission line to be completely impedance matched with the nonlinear resonator 106, the signal can completely enter the superconducting Josephson junction nonlinear resonator 106 without reflection loss, and broadband amplification exceeding the linewidth of the resonant cavity is provided;
that is, the external signal enters the superconducting josephson junction nonlinear resonator 106 through the input/output port 101, three quarter-wavelength impedance transformation lines and one-half wavelength waveguide transmission line, and mixes with the pump signal entering the bias circuit unit 107 or the input/output port 101, so as to realize low noise amplification of the external input signal.
The bias circuit unit 107 provides a direct current signal modulating the operating frequency of the superconducting josephson junction nonlinear resonator 106 and a pump signal amplifying (amplifying signals passing through 102-105 in sequence and entering 106) the required energy, and the bias circuit unit 107 inputs the direct current signal and the pump signal to the superconducting josephson junction nonlinear resonator 106;
the superconducting josephson junction nonlinear resonator 106 converts the pump signal energy into the energy required by the input signal amplification through frequency mixing, and the signals after frequency mixing amplification are reflected along the original path of the input line and finally output through the input-output port 101.
In this embodiment, the power amplifier further comprises a bias device, the direct current signal and the pumping signal are input to the superconducting josephson junction nonlinear resonator 106 through the bias circuit unit 107 after being combined by the bias device, the direct current signal is used for adjusting the working frequency of the nonlinear resonator, and the pumping signal is used for providing the energy required by the amplifying signal of the amplifier;
the input signal and the output signal of the input/output port 101 may be separated by an external circulator.
In this embodiment, the first quarter wavelength impedance transformation line 102 achieves that the characteristic impedance of the external transmission line 50 ohms matches the characteristic impedance of the second quarter wavelength impedance transformation line 103;
the second quarter wavelength impedance transformation line 103 achieves that the impedance transformation line first quarter wavelength impedance transformation line 102 matches the characteristic impedance of the third quarter wavelength impedance transformation line 104.
In the present embodiment, the first quarter-wavelength impedance transformation line 102 and the second quarter-wavelength impedance transformation line 103 are respectively a coplanar waveguide type impedance transformation line 201, an interdigital structure impedance transformation line 204, or a multilayer stacked hybrid structure impedance transformation line 401 of coplanar waveguide/lumped capacitance;
the third quarter-wave impedance transformation line 104 is also an interdigital impedance transformation line 204 or a multilayer stacked hybrid structure impedance transformation line 401 of coplanar waveguide/lumped capacitance;
the operating wavelength of the finger-structured impedance transformation line 204 may be determined by changing the length of the transmission line, or by changing the length of the finger;
the operating wavelength and characteristic impedance of the multilayer stacked hybrid structure impedance transformation line 401 of the coplanar waveguide/lumped capacitor can be determined by changing the placement density of the lumped capacitor mode strips, and when the placement density of the lumped capacitor is large, the impedance characteristic of the line 401 becomes small.
In the present embodiment, the interdigital-structured impedance conversion wire 204 is composed of a plurality of interdigital electrodes 202, a plurality of reference ground interdigital electrodes 201, and a gap between the reference ground interdigital electrodes 201 and the interdigital electrodes 202, which are connected to the center conductor 203; the reference ground interdigital electrode is an interdigital electrode connected to the reference ground.
In this embodiment, the impedance transformation line 401 of the multi-layered stacked hybrid structure of coplanar waveguide/lumped capacitor is composed of a coplanar waveguide transmission line 402 and a lumped capacitor composed of a dielectric layer 404 and a metal plate 403 placed on the coplanar waveguide transmission line 402 with a certain thickness,
in this embodiment, the half-wavelength waveguide transmission line 105, the first quarter-wavelength impedance transformation line 102, the second quarter-wavelength impedance transformation line 103, and the third quarter-wavelength impedance transformation line 104 all have the same operating frequency, and impedance matching can be achieved only if the operating frequencies are the same.
In this embodiment, as shown in fig. 1, 3 and 5, the superconducting josephson junction nonlinear resonator 106 is formed by a capacitor 301 and a superconducting quantum interferometer 302, and a bias line 303 is provided near the superconducting quantum interferometer 302, so that the highest operating frequency of the superconducting josephson junction nonlinear resonator 106 can be set by designing the capacitance value or the equivalent inductance of the superconducting quantum interferometer.
In this embodiment, as shown in fig. 1, the bias circuit unit 107 is used to adjust the dc signal input circuit of the superconducting josephson junction nonlinear resonator 106 and the input circuit of the amplifier for amplifying the required pump signal.
In this embodiment, one end 306 of the superconducting josephson junction nonlinear resonator 106 is connected to ground and the other port 305 is connected to the half wavelength transmission line 105.
In this embodiment, the dc signal enters through the bias circuit unit 107 and passes through the bias line 303 near the superconducting quantum interferometer 302, and the magnetic field generated around the bias line 303 changes the loop magnetic flux of the superconducting quantum interferometer 302, so as to change the equivalent inductance of the superconducting quantum interferometer 302, and finally change the working frequency of the superconducting josephson junction nonlinear resonator 106, and the working frequency of the superconducting josephson junction nonlinear resonator 106 can be adjusted by adjusting the magnitude of the dc signal.
The pump needed by signal amplification can directly enter the superconductive josephson junction nonlinear resonator 106 along the transmission line through the bias circuit unit 107 or through the input/output port 101, wherein the pump signal is fed in different modes and the amplification effect is basically the same, and the pump needed by signal amplification directly enters the superconductive josephson junction nonlinear resonator 106 along the transmission line through the input/output port 101 is a four-wave mixing process, and the pump needed by signal amplification directly enters the superconductive josephson junction nonlinear resonator 106 along the transmission line through the bias circuit unit 107 in a mode of changing magnetic flux on the bias line 303 is a three-wave mixing process.
To verify the effectiveness of this embodiment, the following experimental design was performed:
embodiment one:
in the implementation of the sample, the structure is shown in figure 5,
the designed amplifier chip substrate adopts high-resistance silicon, and the metal materials for designing the impedance transformation line and the superconductive Josephson junction nonlinear resonator adopt niobium or aluminum. The first quarter wavelength impedance transformation line 102 is designed to have a length of 4570um, a characteristic impedance of approximately 40 ohms,
the length of the second quarter-wavelength impedance transformation line 103 is 4570um, the characteristic impedance is close to 29 ohms, the characteristic impedance of the finger-inserting structure impedance transformation line 204 is 20 ohms, the length of the finger-inserting electrode arm is 205um, the width is 5um, the gap is 3.25um, and the total length is about 784um;
a half wavelength impedance transformation line length 9140um, impedance of about 29 ohms; the plate capacitance is about 4.9pF, the critical current of the direct current superconducting quantum interferometer 302 is 3.6 microamps, the equivalent inductance is about 3.5pH, and the highest resonant frequency of the superconducting josephson junction nonlinear resonator is about 7.5GHz.
The amplifier chip in this embodiment should work in a low temperature environment of less than 50mK, the signal to be amplified enters through the port 1 of the microwave circulator, the signal enters the amplifier and is reflected back to the output port of the amplifier, the reflected signal enters along the port 2 of the microwave circulator, and the signal enters the port 3.
S11 parameters of the chip can be extracted by using a vector network analyzer;
and generating a direct-current bias signal by using a direct-current bias source, accessing the direct-current bias circuit, changing the value of the direct-current bias signal, and periodically changing an S11 curve along with the direct-current bias current.
The proper DC bias is selected and maintained, the pump signal is accessed at the DC bias, and the amplification of the broadband signal can be observed on the vector network analyzer at the proper pump frequency and pump power.
Embodiment two:
in the implementation sample, the structure is shown in fig. 7, the designed amplifier chip substrate adopts high-resistance silicon, and the metal materials for designing the impedance transformation line and the superconducting josephson junction nonlinear resonator adopt niobium or aluminum.
In the implementation sample, the designed impedance transformation lines 102 and 105 are designed by adopting a coplanar waveguide, the designed impedance transformation lines 103 and 104 are designed by adopting a coplanar waveguide/lumped capacitance mixed structure, the lumped capacitance structure is 5um x 80um, the dielectric layer is silicon nitride, the thickness is 200nm, wherein the first quarter-wavelength impedance transformation line 102 is designed to have an impedance of about 32 ohms, the second quarter-wavelength impedance transformation line is designed to have an impedance of about 22 ohms, the length is 1977um, a lumped capacitance is placed on the central conductor at intervals of 28um, the third quarter-wavelength impedance transformation line is designed to have an impedance of about 15 ohms, the length is 1317um, the central conductor is placed at intervals of 6um, the half-wavelength impedance transformation line length 9140um, the impedance is about 28 ohms, the plate capacitance value is about 4.9pF, the critical current of the direct current superconducting quantum interferometer is 3.6 microamps, the equivalent inductance is about 3.5pH, and the highest resonant frequency of the superconducting junction nonlinear resonator is about 7.5GHz.
The amplifier test conditions in this embodiment are the same as in embodiment one.
Embodiment III:
in the implementation sample, the structure is shown in fig. 8, the designed amplifier chip substrate adopts high-resistance silicon, and the metal materials for designing the impedance transformation line and the superconducting josephson junction nonlinear resonator adopt niobium or aluminum.
In the embodiment, a coplanar waveguide quarter-wavelength impedance transformation line, an impedance transformation transmission line of a coplanar waveguide/lumped capacitor hybrid structure and an impedance transformation line of an interdigital structure quarter-wavelength coplanar waveguide are adopted;
the first quarter-wavelength impedance transformation line adopts a coplanar waveguide quarter-wavelength transmission line, the impedance design is 32 ohms, and the length is 4570um;
the second quarter-wavelength impedance transformation line adopts a quarter-wavelength interdigital waveguide transmission line, the designed impedance is 22 ohms, the interdigital electrode arm length is 200um, the width is 5um, the gap is 3.25um, and the total length is about 815um;
the third quarter wavelength impedance transformation line adopts an impedance transformation transmission line with a coplanar waveguide/lumped capacitance mixed structure, the lumped capacitance dielectric layer adopts silicon nitride with the thickness of 200nm, the characteristic impedance is 15 ohms, the length is 1317um, the interval is 6um, the half wavelength transmission line adopts a coplanar waveguide structure, the designed impedance is 28 ohms, the length is 9140um, the capacitance value of a flat plate is about 4.9pF, the critical current of the direct current superconducting quantum interferometer is 3.6 microamperes, the equivalent inductance is about 3.5pH, and the highest resonance frequency of the superconducting Josephson junction nonlinear resonator is about 7.5GHz.
By means of examples 1-3, 3 different design combinations are given, which all allow to achieve an impedance matching of the external 50 ohm characteristic impedance transmission line with the superconducting josephson junction nonlinear resonator 106, depending on the specific parameters given in the examples, on the premise that a broadband amplification effect is finally achieved, as shown in fig. 6 and 9.
In summary, in this embodiment, the amplifier chip provided in this embodiment is simple in structure and easy to integrate, and the impedance transformation portion can be prepared by adopting a conventional planar waveguide micro-nano technology, so that the characteristic impedance matching of the external transmission line 50 ohm and the nonlinear resonator terminal impedance is realized by flexibly combining the increase and decrease and the type of the quarter-wavelength impedance transformation line (device).
The above description is merely a further embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art will be able to apply equivalents and modifications according to the technical solution and the concept of the present invention within the scope of the present invention disclosed in the present invention.
Claims (8)
1. A broadband josephson parametric amplifier chip combined by a plurality of impedance converters, characterized in that:
the device comprises an input/output port (101), a first quarter-wavelength impedance transformation line (102), a second quarter-wavelength impedance transformation line (103), a third quarter-wavelength impedance transformation line (104), a half-wavelength waveguide transmission line (105), a superconductive Josephson junction nonlinear resonator (106) and a bias circuit unit (107) which are connected in sequence;
-the characteristic impedance of the second quarter-wavelength impedance transformation line (103) is matched to the impedance of the 50 ohm transmission line and the first quarter-wavelength impedance transformation line (102), respectively;
-the characteristic impedance of the third quarter-wavelength impedance transformation line (104) is matched to the impedance of the first quarter-wavelength impedance transformation line (102) and the second quarter-wavelength impedance transformation line (103), respectively;
the input/output port (101) is used for inputting and outputting signals to be amplified through the signals to be amplified, and the signals to be amplified sequentially pass through a first quarter-wavelength impedance transformation line (102), a second quarter-wavelength impedance transformation line (103), a third quarter-wavelength impedance transformation line (104), a half-wavelength waveguide transmission line (105) and enter a super-conducting Josephson junction nonlinear resonator (106), wherein the three quarter-wavelength impedance transformation lines meet impedance matching conditions and have the same frequency as the half-wavelength waveguide transmission line;
the bias circuit unit (107) is used for providing a direct current signal for modulating the working frequency of the superconducting Josephson junction nonlinear resonator (106) and inputting the direct current signal into the superconducting Josephson junction nonlinear resonator (106);
the superconductive Josephson junction nonlinear resonator (106) is used for receiving the direct current signal and the pumping signal, converting the pumping signal energy into energy required by amplifying an input signal to be amplified, reflecting the amplified signal along an original path of the input signal line, and outputting the amplified signal through an input/output port (101);
the first quarter-wavelength impedance transformation line (102) realizes that the characteristic impedance of the external transmission line 50 ohm is matched with the characteristic impedance of the second quarter-wavelength impedance transformation line (103);
the second quarter-wavelength impedance transformation line (103) realizes that the characteristic impedance of the first quarter-wavelength impedance transformation line (102) and the characteristic impedance of the third quarter-wavelength impedance transformation line (104) of the impedance transformation line are matched.
2. The broadband josephson parametric amplifier chip of the multisection impedance transformer combination of claim 1, wherein:
the bias circuit unit (107) is further configured to provide a pumping signal of energy required for amplification of the superconducting josephson junction nonlinear resonator (106) and input the pumping signal to the superconducting josephson junction nonlinear resonator (106);
the superconductive Josephson junction nonlinear resonator (106) is used for converting the pump signal energy into the energy required by amplifying an input signal through frequency mixing, reflecting the amplified signal along the primary path of a signal input line to be amplified, and outputting the signal through an input/output port (101);
the DC signal and the pumping signal are input to the superconducting Josephson junction nonlinear resonator (106) through the bias circuit unit (107) after being combined by the bias device.
3. The broadband josephson parametric amplifier chip of the multisection impedance transformer combination of claim 1, wherein:
the first quarter-wavelength impedance transformation line (102) and the second quarter-wavelength impedance transformation line (103) are respectively coplanar waveguide type impedance transformation lines (201), interdigital structure impedance transformation lines (204) or multilayer stacked mixed structure impedance transformation lines (401) of coplanar waveguides/lumped capacitors;
the third quarter-wave impedance transformation line (104) is also an interdigital impedance transformation line (204) or a multilayer stacked hybrid structure impedance transformation line (401) of coplanar waveguide/lumped capacitance.
4. The broadband josephson parametric amplifier chip of the multisection impedance transformer combination of claim 1, wherein: the interdigital impedance conversion line (204) is formed by combining a plurality of interdigital electrodes (202) and reference ground interdigital electrodes (201) which are mutually connected with a central conductor (203), and gaps between the interdigital electrodes (202) and the reference ground interdigital electrodes (201).
5. The broadband josephson parametric amplifier chip of the multisection impedance transformer combination of claim 3, wherein: the multi-layer stacked mixed structure impedance transformation line (401) of the coplanar waveguide/lumped capacitor comprises a coplanar waveguide transmission line (402), a dielectric layer (404) and a metal polar plate (403), wherein the dielectric layer (404) is arranged on the coplanar waveguide transmission line (402).
6. The broadband josephson parametric amplifier chip of the multisection impedance transformer combination of claim 1, wherein:
the operating frequencies of the half-wavelength waveguide transmission line (105), the first quarter-wavelength impedance transformation line (102), the second quarter-wavelength impedance transformation line (103) and the third quarter-wavelength impedance transformation line (104) are all consistent.
7. The broadband josephson parametric amplifier chip of the multisection impedance transformer combination of claim 1, wherein: the superconducting Josephson junction nonlinear resonator (106) comprises a capacitor (301) and a superconducting quantum interferometer (302).
8. The broadband josephson parametric amplifier chip of the multi-section impedance transformer combination according to claim 1 or 2, characterized in that: the port (306) of the superconducting josephson junction nonlinear resonator (106) is connected to a reference ground, and the port (305) of the superconducting josephson junction nonlinear resonator (106) is connected to a half-wavelength transmission line.
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