CN114938207A - Broadband Josephson parametric amplifier chip combined by multiple sections of impedance converters - Google Patents
Broadband Josephson parametric amplifier chip combined by multiple sections of impedance converters Download PDFInfo
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Abstract
The invention discloses a broadband Josephson parametric amplifier chip with a combination of a plurality of sections of impedance transformers, which relates to the technical field of amplifiers and comprises an input/output port, a first quarter-wavelength impedance transformation line, a second quarter-wavelength impedance transformation line, a third quarter-wavelength impedance transformation line, a half-wavelength waveguide transmission line, a superconducting Josephson junction nonlinear resonator and a bias circuit unit which are sequentially connected; the characteristic impedance of the second quarter-wavelength impedance transformation line is matched to the impedance of the 50 ohm transmission line and the first quarter-wavelength impedance transformation line, respectively. The amplifier chip provided by the invention has a simple structure and is easy to integrate, the impedance transformation part can be prepared by adopting a conventional planar waveguide micro-nano process, and the impedance matching of the 50 ohm characteristic impedance of the external transmission line and the load terminal of the superconducting Josephson junction nonlinear resonator is realized by increasing and decreasing the quarter-wavelength impedance transformation line (device) and flexibly combining the types.
Description
Technical Field
The invention relates to the technical field of amplifiers, in particular to a broadband Josephson parametric amplifier chip with a combination of a plurality of sections of impedance transformers.
Background
The superconducting quantum information technology is a main scheme for realizing the research of a quantum bit and microwave photon non-classical state at present, for the superconducting quantum bit and microwave photon non-classical state, the signal energy intensity is at a single photon level, and an amplifier with a single photon noise level is required for detection and amplification. By utilizing the characteristics of no dissipation, easy integration and nonlinearity of the Josephson junction, the amplifier based on the parametric principle can be flexibly designed, and the amplifier has unique low-noise advantages in superconducting quantum bit single-shot measurement characterization and superconducting microwave single-photon detection and application.
In many of the presently disclosed schemes, a superconducting josephson parametric amplifier for realizing broadband amplification generally consists of a nonlinear resonator formed by a capacitor and a superconducting quantum interferometer as equivalent inductors, and an external impedance transformation structure for reducing impedance mismatch between characteristic impedance of the nonlinear resonator and characteristics of an external transmission line.
The mismatch can be reduced to a certain extent by adopting the traditional single-section coplanar waveguide type quarter-wave converter structure, but the mismatch is limited by the structural characteristics and the process of the coplanar waveguide, and the requirement on the circuit precision is extremely high by the design and the processing of the two-section or multi-section coplanar waveguide type quarter-wave converter, so that on the basis, the impedance mismatch is difficult to further reduce, and the cost and the process difficulty are increased sharply; impedance mismatch can be further reduced through an impedance transformation line with a gradual change structure, but the structural design is complex, the performance optimization is difficult, and the preset design index is generally difficult to achieve.
Based on this, there is a need for a wideband josephson parametric amplifier chip that integrates planar circuit design and processing advantages, and has small impedance mismatch or even perfect matching-multi-section impedance transformer combination.
Disclosure of Invention
The invention mainly aims to provide a broadband Josephson parametric amplifier chip combined by a multi-section impedance converter, a planar circuit impedance structure for realizing impedance matching optimization by utilizing the multi-section impedance converter can form impedance matching with a nonlinear Josephson junction resonator by utilizing the circuit structure to form a broadband Josephson parametric amplifier with excellent performance.
The purpose of the invention can be achieved by adopting the following technical scheme:
a broadband Josephson parametric amplifier chip with multi-section impedance transformer combination,
the superconducting Josephson junction nonlinear resonator comprises an input/output port, a first quarter-wavelength impedance transformation line, a second quarter-wavelength impedance transformation line, a third quarter-wavelength impedance transformation line, a half-wavelength waveguide transmission line, a superconducting Josephson junction nonlinear resonator and a bias circuit unit which are connected in sequence;
the characteristic impedance of the second quarter-wavelength impedance transformation line is respectively matched with the impedance of the 50-ohm transmission line and the impedance of the first quarter-wavelength impedance transformation line;
the characteristic impedance of the third quarter-wavelength impedance transformation line is respectively matched with the impedance of the first quarter-wavelength impedance transformation line and the impedance of the second quarter-wavelength impedance transformation line;
the input/output port is used for inputting and outputting signals to be amplified through the signals to be amplified, and the signals to be amplified sequentially pass through a first quarter-wavelength impedance transformation line, a second quarter-wavelength impedance transformation line, a third quarter-wavelength impedance transformation line and a half-wavelength waveguide transmission line and enter the super-conductivity Josephson junction nonlinear resonator;
the amplified signal is output from the superconducting Josephson junction nonlinear resonator, sequentially passes through a half-wavelength waveguide transmission line, a third quarter-waveguide impedance transformation line, a second quarter-waveguide impedance transformation line and a first quarter-waveguide impedance transformation line, and is output through the input and output port;
the bias circuit unit is used for providing a direct current signal for modulating the working frequency of the superconducting Josephson junction nonlinear resonator and inputting the direct current signal to the nonlinear resonator;
the superconducting Josephson junction nonlinear resonator is used for receiving the direct current signal and the pumping signal, converting the energy of the pumping signal into the energy required by the amplification of the input signal to be amplified, reflecting the amplified signal along the original path of the input signal line, and outputting the amplified signal through an input/output port.
Preferably, the bias circuit unit is further configured to provide a pump signal for modulating energy required by the superconducting josephson junction nonlinear resonator to amplify the signal, and input the pump signal to the nonlinear resonator;
the superconducting Josephson junction nonlinear resonator is used for converting the energy of a pumping signal into the amplification energy of an input signal to be amplified through frequency mixing, enabling the amplification energy to be reflected along the original path of the input circuit of the signal to be amplified and outputting the signal through an input/output port;
the direct current signal and the pumping signal are combined by the biaser and then input to the superconducting Josephson junction nonlinear resonator through the biasing circuit unit.
Preferably, the first quarter-wavelength impedance transformation line realizes that the external transmission line 50 ohm characteristic impedance is matched with the second quarter-wavelength impedance transformation line characteristic impedance;
the second quarter-wavelength impedance transformation line realizes the characteristic impedance matching of the first quarter-wavelength impedance transformation line and the third quarter-wavelength impedance transformation line of the impedance transformation line.
Preferably, the first quarter-wavelength impedance transformation line and the second quarter-wavelength impedance transformation line are a coplanar waveguide type impedance transformation line, an insertion finger structure impedance transformation line or a multilayer stacked mixed structure impedance transformation line of a coplanar waveguide/lumped capacitor, respectively;
the third quarter-wave impedance transformation line is also an insertion finger structure impedance transformation line or a multi-layer stacking mixed structure impedance transformation line of a coplanar waveguide/lumped capacitor.
Preferably, the interdigital impedance transformation line is formed by a plurality of interdigital electrodes and reference ground interdigital electrodes interconnected with the central conductor, and a gap between the interdigital electrodes and the reference ground interdigital electrodes.
Preferably, the impedance transformation line of the multilayer stacked hybrid structure of the coplanar waveguide/lumped capacitor comprises a coplanar waveguide transmission line, a dielectric layer and a metal plate, wherein the dielectric layer is arranged on the coplanar waveguide transmission line.
Preferably, the operating frequencies of the half-wavelength waveguide transmission line, the first quarter-wavelength impedance transformation line, the second quarter-wavelength impedance transformation line and the third quarter-wavelength impedance transformation line are all the same.
Preferably, the superconducting Josephson junction nonlinear resonator comprises a capacitor and a superconducting quantum interferometer.
Preferably, one end of the superconducting Josephson junction nonlinear resonator is connected with the reference ground through a direct current superconducting quantum interferometer, and the other end of the superconducting Josephson junction nonlinear resonator is connected with the half-wavelength transmission line.
The invention has the beneficial technical effects that:
1. the amplifier chip provided by the invention has a simple structure and is easy to integrate, the impedance transformation part can be prepared by adopting a conventional planar waveguide micro-nano process, and the matching of the 50 ohm characteristic impedance of the external transmission line and the terminal impedance of the nonlinear resonator is realized by increasing and decreasing the quarter-wavelength impedance transformation line (device) and flexibly combining the types.
2. The quarter-wavelength impedance transformation part and the half-wavelength waveguide transmission line can be flexibly designed by adopting any combination or single structure of three types including coplanar waveguides, waveguides with an inserted finger structure and coplanar waveguide/lumped capacitor mixed structures.
3. The amplifier provided by the invention can realize broadband amplification in a designed working frequency range, and can adjust the optimal broadband amplification frequency range of the amplifier by adjusting the length of the impedance transformation part.
Drawings
FIG. 1 is a schematic diagram of an overall layout of an amplifier according to an embodiment of the invention;
FIG. 2 is a schematic diagram of an interdigitated impedance transformation line in accordance with an embodiment of the present invention;
FIG. 3 is a schematic diagram of a coplanar waveguide/lumped capacitor hybrid structure in accordance with an embodiment of the invention;
FIG. 4 is a schematic view of a superconducting Josephson junction nonlinear resonator layout in accordance with an embodiment of the present invention;
FIG. 5 is a schematic diagram of a layout according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of gain amplification according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of a second exemplary embodiment of a structural layout according to the present invention;
FIG. 8 is a schematic diagram of a layout of a third structure according to an embodiment of the present invention;
FIG. 9 is a graph illustrating gain according to an embodiment of the present invention.
In the figure: 101-input/output port, 102-first quarter-wavelength impedance transformation line, 103-second quarter-wavelength impedance transformation line, 104-third quarter-wavelength impedance transformation line, 105-half-wavelength waveguide transmission line, 106-superconducting josephson junction nonlinear resonator, 107-bias circuit unit, 201-reference ground interdigital electrode, 202-interdigital electrode, 203-center conductor, 204-interdigital structure impedance transformation line, 301-capacitance, 302-superconducting quantum interferometer, 303-bias line, 304-bias circuit input line, 305-superconducting josephson junction nonlinear resonator port connected with half-wavelength transmission line, 306-superconducting josephson junction nonlinear resonator port connected with reference ground, 401-coplanar waveguide/lumped capacitor multilayer stacked hybrid impedance transformation line, 402-coplanar waveguide transmission line, 403-metal plate, 404-dielectric layer.
Detailed Description
In order to make the technical solutions of the present invention more clear and definite for those skilled in the art, the present invention is further described in detail below with reference to the examples and the accompanying drawings, but the embodiments of the present invention are not limited thereto.
As shown in fig. 1 to fig. 9, the present embodiment provides a wideband josephson parametric amplifier chip with a combination of multiple impedance converters,
the superconducting Josephson junction nonlinear resonator comprises an input/output port 101, a first quarter-wavelength impedance transformation line 102, a second quarter-wavelength impedance transformation line 103, a third quarter-wavelength impedance transformation line 104, a half-wavelength waveguide transmission line 105, a superconducting Josephson junction nonlinear resonator 106 and a bias circuit unit 107 which are connected in sequence;
wherein, the three quarter-wavelength impedance transformation lines meet the impedance matching condition and have the same frequency as the half-wavelength waveguide transmission line;
wherein one end of the first quarter-wavelength impedance transformation line 102 is connected with the input/output port 101, the other end is connected with the second quarter-wavelength impedance transformation line 103,
the characteristic impedance of the first quarter-wavelength impedance transformation line 102 meets the impedance matching design requirement, and the characteristic impedance of the input/output port 101 is matched with the characteristic impedance of the second quarter-wavelength impedance transformation line 103 within the working bandwidth;
the superconducting Josephson junction nonlinear resonator is composed of a plate capacitor and a (direct current) superconducting quantum interferometer 302, wherein the (direct current) superconducting quantum interferometer 302 is composed of two superconducting Josephson junctions connected in parallel and a superconducting loop thereof;
the characteristic impedance of the second quarter-wavelength impedance transformation line 103 is matched with the impedance of the 50 ohm transmission line and the first quarter-wavelength impedance transformation line 102, respectively;
the characteristic impedance of the third quarter-wavelength impedance transformation line 104 is matched with the impedance of the first quarter-wavelength impedance transformation line 102 and the impedance of the second quarter-wavelength impedance transformation line 103 respectively;
the impedance matching has the function of enabling the signal passing through the transmission line to pass through without reflection, and ensuring that the energy of the signal passes through the line to the maximum extent without causing reflection loss; impedance mismatch can prevent a part of signal energy from passing through a transmission line, and reflection loss exists;
the other end of the second quarter-wave impedance transformation line 103 is connected to a third quarter-wave impedance transformation line 104,
the characteristic impedance of the second quarter-wavelength impedance transformation line 103 meets the impedance matching design requirement, and the characteristic impedance of the first quarter-wavelength impedance transformation line 102 is matched with the characteristic impedance of the third quarter-wavelength impedance transformation line 104 within the working bandwidth;
the other end of the third quarter-wavelength impedance transformation line 104 is connected to a half-wavelength waveguide transmission line 105,
the characteristic impedance of the third quarter-wavelength impedance transformation line 104 meets the impedance matching design requirement, and the characteristic impedance of the input/output port 101 and the impedances of the first and second quarter-wavelength impedance transformation lines are matched within a working bandwidth;
inputting a signal to be amplified to an input/output port 101, wherein the signal sequentially passes through a first quarter-wavelength impedance transformation line 102, a second quarter-wavelength impedance transformation line 103, a third quarter-wavelength impedance transformation line 104 and a half-wavelength waveguide transmission line 105 and enters a nonlinear resonator 106;
the signal to be amplified sequentially passes through 101-105, so that an external transmission line can be completely matched with the nonlinear resonator 106 in impedance, the signal can completely enter the superconducting Josephson junction nonlinear resonator 106 without reflection loss, and broadband amplification exceeding the line width of the resonant cavity is provided;
that is, an external signal enters the superconducting josephson junction nonlinear resonator 106 through the input/output port 101, the three quarter-wavelength impedance transformation lines and the half-wavelength waveguide transmission line, and is mixed with a pump signal entering the bias circuit unit 107 or the input/output port 101, so that low-noise amplification of the external input signal is realized.
The bias circuit unit 107 provides a direct current signal for modulating the working frequency of the superconducting Josephson junction nonlinear resonator 106 and a pumping signal for amplifying energy (signals which sequentially pass through 102-105 and enter 106 are amplified), and the bias circuit unit 107 inputs the direct current signal and the pumping signal to the superconducting Josephson junction nonlinear resonator 106;
the superconducting Josephson junction nonlinear resonator 106 converts the energy of the pumping signal into the energy required by the amplification of the input signal through mixing, the signal after mixing and amplification is reflected along the original path of the input line and finally output by the input/output port 101.
In this embodiment, the superconducting josephson junction nonlinear resonator further includes a bias device, a dc signal and a pump signal are combined by the bias device and then input to the superconducting josephson junction nonlinear resonator 106 through a bias circuit unit 107, the dc signal is used to adjust the operating frequency of the nonlinear resonator, and the pump signal is used to provide energy required by the amplifier to amplify the signal;
the input signal and the output signal of the input/output port 101 can be separated by an external circulator.
In the present embodiment, the first quarter-wavelength impedance transformation line 102 achieves matching of the external transmission line 50 ohm characteristic impedance with the second quarter-wavelength impedance transformation line 103 characteristic impedance;
the second quarter wave impedance transformation line 103 implements impedance transformation line the first quarter wave impedance transformation line 102 matches the characteristic impedance of the third quarter wave impedance transformation line 104.
In the present embodiment, the first quarter-wave impedance transformation line 102 and the second quarter-wave impedance transformation line 103 are a coplanar waveguide type impedance transformation line 201, an interdigital structure impedance transformation line 204, or a multilayer stacked hybrid structure impedance transformation line 401 of coplanar waveguide/lumped capacitor, respectively;
the third quarter-wave impedance transformation line 104 is also an interdigitated structure impedance transformation line 204 or a multi-layer stacked hybrid structure impedance transformation line 401 of coplanar waveguide/lumped capacitance;
the operating wavelength of the finger structure impedance transformation line 204 can be determined by changing the length of the transmission line, or by changing the length of the finger;
the working wavelength and the characteristic impedance of the impedance conversion line 401 of the multilayer stacked mixed structure of the coplanar waveguide/lumped capacitor can be determined by changing the placement density of the lumped capacitor mode bars, and when the placement density of the lumped capacitor is high, the impedance characteristic of the line 401 becomes small.
In the present embodiment, the interdigital structure impedance transformation line 204 is composed of a plurality of interdigital electrodes 202 connected to the central conductor 203, a plurality of reference ground interdigital electrodes 201, and a gap between the reference ground interdigital electrodes 201 and the interdigital electrodes 202; the reference ground interdigital electrode is an interdigital electrode connected with a reference ground.
In the present embodiment, the impedance transformation line 401 of the multi-layer stacked hybrid structure of coplanar waveguide/lumped capacitor is composed of a coplanar waveguide transmission line 402 and a lumped capacitor composed of a dielectric layer 404 and a metal plate 403 with a certain thickness placed on the coplanar waveguide transmission line 402,
in this embodiment, the operating frequencies of the half-wavelength waveguide transmission line 105, the first quarter-wavelength impedance transformation line 102, the second quarter-wavelength impedance transformation line 103, and the third quarter-wavelength impedance transformation line 104 are all the same, and only if the operating frequencies are the same, the impedance matching can be achieved.
In the present embodiment, as shown in fig. 1, 3 and 5, the superconducting josephson junction nonlinear resonator 106 is composed of a capacitor 301 and a superconducting quantum interferometer 302, a bias line 303 is provided near the superconducting quantum interferometer 302, and the highest operating frequency of the superconducting josephson junction nonlinear resonator 106 can be set by designing the capacitance value thereof or the equivalent inductance of the superconducting quantum interferometer.
In this embodiment, as shown in fig. 1, the bias circuit unit 107 is used for a direct-current signal input circuit for adjusting the operating frequency of the superconducting josephson junction nonlinear resonator 106 and an input circuit for amplifying a desired pump signal by an amplifier.
In this embodiment, one end 306 of the superconducting josephson junction nonlinear resonator 106 is connected to ground, and the other port 305 is connected to the half-wavelength transmission line 105.
In this embodiment, the dc signal enters through the bias circuit unit 107, passes through the bias line 303 near the superconducting quantum interferometer 302, and changes the loop flux of the superconducting quantum interferometer 302 by the magnetic field generated around the bias line 303, thereby changing the equivalent inductance of the superconducting quantum interferometer 302, and finally changing the operating frequency of the superconducting josephson junction nonlinear resonator 106, and the adjustment of the operating frequency of the superconducting josephson junction nonlinear resonator 106 can be realized by adjusting the magnitude of the dc signal.
The pump required for signal amplification can directly enter the superconducting josephson junction nonlinear resonator 106 along the transmission line through the bias circuit unit 107 or through the input/output port 101, wherein the process of four-wave mixing is that the pump directly enters the superconducting josephson junction nonlinear resonator 106 along the transmission line through the input/output port 101, the process of three-wave mixing is that the pump directly enters the superconducting josephson junction nonlinear resonator 106 through the bias circuit unit 107 in a way of changing magnetic flux on the bias line 303, the feeding modes of the pump signals are different, and the amplification effects are basically the same.
To verify the effectiveness of this embodiment, the following experimental design was performed:
the first embodiment is as follows:
in the working sample, the structure is shown in figure 5,
the designed amplifier chip substrate adopts high-resistance silicon, and the metal materials for designing the impedance transformation line and the superconducting Josephson junction nonlinear resonator adopt niobium or aluminum. The first quarter wave impedance transformation line 102 is designed to be 4570um in length, with a characteristic impedance of approximately 40 ohms,
the length of the second quarter-wavelength impedance transformation line 103 is 4570um, the characteristic impedance is close to 29 ohms, the characteristic impedance of the finger insertion structure impedance transformation line 204 is 20 ohms, the finger insertion electrode arm length is 205um, the width is 5um, the gap is 3.25um, and the total length is about 784 um;
the length of the half-wavelength impedance transformation line is 9140um, and the impedance is about 29 ohms; the plate capacitance value is about 4.9pF, the critical current of the direct current superconducting quantum interferometer 302 is 3.6 microamperes, the equivalent inductance is about 3.5pH, and the highest resonant frequency of the superconducting Josephson junction nonlinear resonator is about 7.5 GHz.
In the embodiment, the amplifier chip should work in a low-temperature environment of less than 50mK, a signal to be amplified enters through the 1 st port of the microwave circulator, the 2 nd port of the amplifier chip outputs and is connected to the input/output port of the amplifier chip, the signal enters the amplifier and is reflected back to the output port of the amplifier chip, the reflected signal enters along the 2 nd port of the microwave circulator, and the 3 rd port of the microwave circulator outputs.
The S11 parameter of the chip can be extracted by using a vector network analyzer;
a direct current bias signal generated by a direct current bias source is connected into a direct current bias circuit, the value of the direct current bias signal is changed, and an S11 curve changes along with the period of the direct current bias current.
And selecting and maintaining proper direct current bias, accessing a pumping signal at a direct current bias end, and observing amplification of a broadband signal on a vector network analyzer under proper pumping frequency and pumping power.
Example two:
in the practical sample, the structure is as shown in fig. 7, the amplifier chip substrate is designed to be made of high-resistance silicon, and the metal material for designing the impedance transformation line and the superconducting josephson junction nonlinear resonator is made of niobium or aluminum.
In the practical sample, the designed impedance transformation lines 102 and 105 are designed by using a coplanar waveguide design, the designed impedance transformation lines 103 and 104 are designed by using a coplanar waveguide/lumped capacitor mixed structure design, the lumped capacitor structure size is 5um by 80um, the dielectric layer is made of silicon nitride, the thickness is 200nm, the impedance of the first quarter-wavelength impedance transformation line 102 is designed to be about 32 ohms, the impedance of the second quarter-wavelength impedance transformation line is designed to be about 22 ohms, the length is 1977um, a lumped capacitor is arranged on each 28um interval on the central conductor, the impedance of the third quarter-wavelength impedance transformation line is designed to be about 15 ohms, the length is 1317um, a concentrated capacitor is arranged on each 6um interval on the central conductor, the length of the half-wavelength impedance transformation line is 9140um, the impedance is about 28 ohms, the capacitance value of a flat plate is about 4.9pF, the critical current of the direct current superconducting quantum interferometer is 3.6 microamperes, the equivalent inductance is about 3.5pH, and the maximum resonant frequency of the superconducting Josephson junction nonlinear resonator is about 7.5 GHz.
The amplifier test conditions in this example are the same as in the first example.
Example three:
in the practical sample, the structure is as shown in fig. 8, the amplifier chip substrate is designed to be made of high-resistance silicon, and the metal material for designing the impedance transformation line and the superconducting josephson junction nonlinear resonator is made of niobium or aluminum.
In the embodiment, a coplanar waveguide quarter-wavelength impedance transformation line, an impedance transformation transmission line of a coplanar waveguide/lumped capacitor mixed structure and an insert finger structure quarter-wavelength coplanar waveguide impedance transformation line are adopted;
the first quarter-wavelength impedance transformation line adopts a coplanar waveguide quarter-wavelength transmission line, the impedance is designed to be 32 ohms, and the length is 4570 um;
the second quarter-wavelength impedance transformation line adopts a quarter-wavelength interdigital waveguide transmission line, the impedance is designed to be 22 ohms, the interdigital electrode arm length is 200um, the width is 5um, the gap is 3.25um, and the total length is about 815 um;
the third quarter-wavelength impedance transformation line adopts an impedance transformation transmission line of a coplanar waveguide/lumped capacitor mixed structure, a lumped capacitor dielectric layer adopts silicon nitride, the thickness of the transmission line is 200nm, the characteristic impedance is 15 ohms, the length is 1317um, the interval is 6um, a half-wavelength transmission line adopts a coplanar waveguide structure, the designed impedance is 28 ohms, the length is 9140um, the plate capacitance value is about 4.9pF, the critical current of the direct current superconducting quantum interferometer is 3.6 microamperes, the equivalent inductance is about 3.5pH, and the highest resonant frequency of the superconducting Josephson junction nonlinear resonator is about 7.5 GHz.
Through embodiments 1-3, 3 different design combinations are given, and according to specific parameters given in the embodiments, the three different design combinations can all realize the impedance matching between the external 50-ohm characteristic impedance transmission line and the superconducting josephson junction nonlinear resonator 106, and finally realize the effect of broadband amplification on the premise, as shown in fig. 6 and 9.
In summary, in this embodiment, the amplifier chip provided in this embodiment has a simple structure and is easy to integrate, the impedance transformation portion can be prepared by a conventional planar waveguide micro-nano process, and the matching of the 50-ohm characteristic impedance of the external transmission line and the terminal impedance of the nonlinear resonator is realized by increasing or decreasing the quarter-wavelength impedance transformation line (device) and flexibly combining the types.
The above description is only a further embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can substitute or change the technical solution of the present invention and its idea within the scope of the present invention.
Claims (9)
1. A multi-section impedance transformer combined broadband Josephson parametric amplifier chip is characterized in that:
the superconducting Josephson junction nonlinear resonator comprises an input/output port (101), a first quarter-wavelength impedance transformation line (102), a second quarter-wavelength impedance transformation line (103), a third quarter-wavelength impedance transformation line (104), a half-wavelength waveguide transmission line (105), a superconducting Josephson junction nonlinear resonator (106) and a bias circuit unit (107) which are sequentially connected;
the characteristic impedance of the second quarter-wavelength impedance transformation line (103) is matched with the impedance of the 50 ohm transmission line and the first quarter-wavelength impedance transformation line (102), respectively;
the characteristic impedance of the third quarter wavelength impedance transformation line (104) is matched with the impedance of the first quarter wavelength impedance transformation line (102) and the second quarter wavelength impedance transformation line (103), respectively;
the input/output port (101) is used for inputting and outputting signals to be amplified through the signals to be amplified, the signals to be amplified sequentially pass through a first quarter-wavelength impedance transformation line (102), a second quarter-wavelength impedance transformation line (103), a third quarter-wavelength impedance transformation line (104) and a half-wavelength waveguide transmission line (105), and enter a super-guided Josephson junction nonlinear resonator (106);
the bias circuit unit (107) is used for providing a direct current signal for modulating the working frequency of the superconducting Josephson junction nonlinear resonator (106) and inputting the direct current signal to the superconducting Josephson junction nonlinear resonator (106);
the superconducting Josephson junction nonlinear resonator (106) is used for receiving the direct current signal and the pumping signal, converting the energy of the pumping signal into energy required by amplification of an input signal to be amplified, reflecting the amplified signal along the original path of an input signal line, and outputting the amplified signal through an input/output port (101).
2. The wideband josephson parametric amplifier chip with the combination of multiple impedance converters of claim 1, wherein: the bias circuit unit (107) is also used for providing a pumping signal of energy required by the amplification of the superconducting Josephson junction nonlinear resonator (106) and inputting the pumping signal to the superconducting Josephson junction nonlinear resonator (106);
the superconducting Josephson junction nonlinear resonator (106) is used for converting the energy of the pumping signal into the energy required by the amplification of the input signal through mixing, enabling the amplified signal to be reflected along the original path of the signal input line to be amplified and output through the input and output port (101);
the superconducting Josephson junction nonlinear resonator further comprises a biaser, and the direct current signal and the pumping signal are combined by the biaser and then input to the superconducting Josephson junction nonlinear resonator (106) through a biasing circuit unit (107).
3. The multi-node impedance transformer combined broadband josephson parametric amplifier chip of claim 1, wherein: the first quarter-wave impedance transformation line (102) realizes that the external transmission line 50 ohm characteristic impedance is matched with the characteristic impedance of the second quarter-wave impedance transformation line (103);
the second quarter-wave impedance transformation line (103) realizes characteristic impedance matching of the impedance transformation line, the first quarter-wave impedance transformation line (102) and the third quarter-wave impedance transformation line (104).
4. The wideband josephson parametric amplifier chip with the combination of multiple impedance converters of claim 1, wherein: the first quarter-wave impedance transformation line (102) and the second quarter-wave impedance transformation line (103) are coplanar waveguide type impedance transformation lines (201), interdigital structure impedance transformation lines (204) or multilayer stacked mixed structure impedance transformation lines (401) of coplanar waveguides/lumped capacitors respectively;
the third quarter-wave impedance transformation line (104) is also an interdigitated structural impedance transformation line (204) or a multi-layer stacked hybrid structural impedance transformation line (401) of coplanar waveguide/lumped capacitance.
5. The wideband Josephson parametric amplifier chip with the combination of multiple impedance converters of claim 4, wherein: the interdigital structure impedance transformation line (204) is formed by combining a plurality of interdigital electrodes (202) and reference ground interdigital electrodes (201) which are mutually connected with the central conductor (203) and gaps between the interdigital electrodes (202) and the reference ground interdigital electrodes (201).
6. The multi-junction impedance transformer combined broadband josephson parametric amplifier chip of claim 4, wherein: the impedance transformation line (401) of the multilayer stacked mixed structure of the coplanar waveguide/lumped capacitor comprises a coplanar waveguide transmission line (402), a dielectric layer (404) and a metal plate (403), wherein the dielectric layer (404) is placed on the coplanar waveguide transmission line (402).
7. The multi-node impedance transformer combined broadband josephson parametric amplifier chip of claim 1, wherein:
the operating frequencies of the half-wavelength waveguide transmission line (105), the first quarter-wavelength impedance transformation line (102), the second quarter-wavelength impedance transformation line (103) and the third quarter-wavelength impedance transformation line (104) are all consistent.
8. The multi-node impedance transformer combined broadband josephson parametric amplifier chip of claim 1, wherein: the superconducting Josephson junction nonlinear resonator (106) comprises a capacitor (301) and a superconducting quantum interferometer (302).
9. A multi-junction impedance transformer combined broadband josephson parametric amplifier chip according to claim 1 or 2, wherein: the port (306) of the superconducting Josephson junction nonlinear resonator (106) is connected with a reference ground, and the port (305) of the superconducting Josephson junction nonlinear resonator (106) is connected with a half-wavelength transmission line.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116015219A (en) * | 2023-01-17 | 2023-04-25 | 清华大学 | Josephson parametric amplifier |
| CN117474112A (en) * | 2023-12-20 | 2024-01-30 | 量子科技长三角产业创新中心 | Quantum chip parameter determining method and device, filtering regulation and control method and device |
| CN118261259A (en) * | 2024-05-30 | 2024-06-28 | 山东云海国创云计算装备产业创新中心有限公司 | Hamiltonian volume determination architecture, method, system, device and medium |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101807951A (en) * | 2010-02-08 | 2010-08-18 | 常州赛杰电子信息有限公司 | Communication distance extender of wireless sensor network and extension method |
| CN105244583A (en) * | 2015-10-21 | 2016-01-13 | 电子科技大学 | Novel ultra-wideband microstrip Wilkinson power divider |
| CN107634301A (en) * | 2017-09-02 | 2018-01-26 | 南京理工大学 | A kind of Planar Magic-T with common mode inhibition function |
| CN113242027A (en) * | 2021-02-24 | 2021-08-10 | 南京大学 | Impedance matching Josephson parametric amplifier based on series connection of multiple superconducting Josephson junctions |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108259014B (en) * | 2018-01-10 | 2024-10-11 | 合肥本源量子计算科技有限责任公司 | Impedance matching Josephson parametric amplifier, preparation method thereof and communication module |
-
2022
- 2022-05-06 CN CN202210485720.6A patent/CN114938207B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101807951A (en) * | 2010-02-08 | 2010-08-18 | 常州赛杰电子信息有限公司 | Communication distance extender of wireless sensor network and extension method |
| CN105244583A (en) * | 2015-10-21 | 2016-01-13 | 电子科技大学 | Novel ultra-wideband microstrip Wilkinson power divider |
| CN107634301A (en) * | 2017-09-02 | 2018-01-26 | 南京理工大学 | A kind of Planar Magic-T with common mode inhibition function |
| CN113242027A (en) * | 2021-02-24 | 2021-08-10 | 南京大学 | Impedance matching Josephson parametric amplifier based on series connection of multiple superconducting Josephson junctions |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116015219A (en) * | 2023-01-17 | 2023-04-25 | 清华大学 | Josephson parametric amplifier |
| CN117474112A (en) * | 2023-12-20 | 2024-01-30 | 量子科技长三角产业创新中心 | Quantum chip parameter determining method and device, filtering regulation and control method and device |
| CN117474112B (en) * | 2023-12-20 | 2024-04-16 | 量子科技长三角产业创新中心 | Quantum chip parameter determining method and device, filtering regulation and control method and device |
| CN118261259A (en) * | 2024-05-30 | 2024-06-28 | 山东云海国创云计算装备产业创新中心有限公司 | Hamiltonian volume determination architecture, method, system, device and medium |
| CN118261259B (en) * | 2024-05-30 | 2024-08-20 | 山东云海国创云计算装备产业创新中心有限公司 | Hamiltonian volume determination architecture, method, system, device and medium |
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