CN114937620A - Method for manufacturing semiconductor device - Google Patents
Method for manufacturing semiconductor device Download PDFInfo
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- CN114937620A CN114937620A CN202210481213.5A CN202210481213A CN114937620A CN 114937620 A CN114937620 A CN 114937620A CN 202210481213 A CN202210481213 A CN 202210481213A CN 114937620 A CN114937620 A CN 114937620A
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- sic substrate
- carrier plate
- glass
- glass carrier
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims abstract description 138
- 239000011521 glass Substances 0.000 claims abstract description 80
- 238000005520 cutting process Methods 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 18
- 238000007789 sealing Methods 0.000 claims abstract description 15
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 238000005452 bending Methods 0.000 claims abstract description 8
- 239000003292 glue Substances 0.000 claims abstract description 5
- 239000005341 toughened glass Substances 0.000 claims description 12
- 239000007788 liquid Substances 0.000 claims description 10
- 239000006058 strengthened glass Substances 0.000 claims description 10
- 238000001179 sorption measurement Methods 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
- C03B33/023—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor the sheet or ribbon being in a horizontal position
- C03B33/033—Apparatus for opening score lines in glass sheets
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/08—Severing cooled glass by fusing, i.e. by melting through the glass
- C03B33/082—Severing cooled glass by fusing, i.e. by melting through the glass using a focussed radiation beam, e.g. laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
- Dicing (AREA)
Abstract
The invention provides a preparation method of a semiconductor device, which comprises the following steps: b100, adsorbing the SiC substrate with the front surface component to a glass carrier plate; b200, removing the Si-based carrier plate after removing the SOG sealing the SiC substrate and the Si-based carrier plate; b300, overturning the SiC substrate, and sealing the SiC substrate and the glass carrier plate by adopting PI; b400, carrying out a back coating process on the SiC substrate to form a metal film; b500, cutting the metal film according to a preset cutting track; and B600, adhering the SiC substrate subjected to the metal film cutting to the reinforced glass through UV glue, and performing the SiC substrate cutting process. When the SiC substrate is transferred from the Si-based carrier plate to the glass carrier plate, the SiC substrate is firstly adsorbed and fixed, and then the SiC substrate and the glass carrier plate are sealed through PI. Therefore, the convenience of transferring the SiC substrate from the Si-based carrier plate to the glass carrier plate is improved. Moreover, the grains are cut by adopting picosecond laser, and the SiC substrate is cracked by bending the flexible glass, so that the cutting reliability of the thin SiC substrate is improved.
Description
Technical Field
The invention relates to the technical field of semiconductor preparation, in particular to a preparation method of a semiconductor device.
Background
In a semiconductor device manufacturing process, when an object to be processed (such as a wafer) is thin, the object to be processed needs to be fixed to a carrier for support. Moreover, since the process for manufacturing the semiconductor device is complicated, the number of process steps involved is large, and the operating environments of the process steps are different, there are different requirements for the performance of the carrier, and the semiconductor device needs to be fixed to the corresponding carrier in different process steps.
In the prior art, when a semiconductor device is transferred from one carrier to another carrier, the positioning and fixing of the semiconductor device are complicated, and the preparation efficiency and quality of the semiconductor device are influenced. And the wafer with higher hardness and thinner thickness is difficult to cut.
Disclosure of Invention
The invention provides a method for manufacturing a semiconductor device, aiming at improving the convenience and the high efficiency of carrier transfer in the preparation of the semiconductor device and the convenience of cutting the semiconductor device.
The preparation method of the semiconductor device according to the embodiment of the invention comprises the following steps:
b100, adsorbing the SiC substrate with the front surface component to a glass carrier plate;
b200, removing the SOG which seals the SiC substrate and the Si-based carrier plate, and then removing the Si-based carrier plate;
b300, overturning the SiC substrate, and sealing the SiC substrate and the glass carrier plate by adopting PI;
b400, carrying out a back coating process on the SiC substrate to form a metal film;
b500, cutting the metal film according to a preset cutting track;
and B600, adhering the SiC substrate subjected to the metal film cutting to the reinforced glass through UV glue, and performing the SiC substrate cutting process.
According to the preparation method of the semiconductor device, when the SiC substrate is transferred from the Si-based carrier plate to the glass carrier plate, the SiC substrate is adsorbed and fixed, and then the SiC substrate and the glass carrier plate are sealed through PI. Therefore, the convenience of transferring the SiC substrate from the Si-based carrier plate to the glass carrier plate is improved.
According to some embodiments of the invention, in step B500, after the SiC substrate is attached to the strengthened glass, the PI sealing the SiC substrate and the glass carrier is removed, and the glass carrier is removed.
In some embodiments of the present invention, step B100 comprises:
and adsorbing the SiC substrate to the glass carrier plate by adopting a mechanical arm, a sucking disc or vacuum adsorption equipment.
According to some embodiments of the invention, in step B600, when the SiC substrate is cut, the SiC substrate is first formed by stealth cutting with picosecond laser, and then the SiC substrate is cleaved by a splitting and film-expanding process.
In some embodiments of the present invention, the strengthened glass in step B600 is a flexible strengthened glass.
According to some embodiments of the invention, the SiC substrate is cleaved by bending the strengthened glass.
In some embodiments of the present invention, the glass carrier plate is provided with a plurality of through ventilation holes at intervals.
According to some embodiments of the invention, in step B100, the SiC substrate and the glass carrier plate are pre-fixed with a liquid before the SiC substrate is adsorbed to the glass carrier plate.
In some embodiments of the present invention, when the SiC substrate and the glass carrier plate are pre-fixed with a liquid, in step B300, partial edges of the SiC substrate and the glass carrier plate are sealed while the SiC substrate and the glass carrier plate are sealed with PI.
Drawings
Fig. 1 is a flow chart of a method of fabricating a semiconductor device according to an embodiment of the present invention;
FIG. 2 is a schematic view of a SiC substrate according to an embodiment of the present invention being attached to a first glass carrier plate by robot suction;
FIG. 3 is a schematic view of the removal of an SOG separation SiC substrate and a Si-based carrier plate according to an embodiment of the present invention;
FIG. 4 is a schematic view of an inverted SiC substrate according to an embodiment of the present invention;
FIG. 5 is a schematic diagram illustrating sealing of a SiC substrate and a glass carrier plate by using PI according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of backside coating of a SiC substrate according to an embodiment of the present invention;
FIG. 7 is a schematic diagram of a metal film cut according to an embodiment of the present invention;
FIG. 8 is a schematic view of a SiC substrate secured to a strengthened glass by a UV glue according to an embodiment of the present invention;
FIG. 9 is a schematic view of the second carrier glass with PI removed according to an embodiment of the invention;
FIG. 10 is a schematic diagram of a front side of a SiC substrate flipped over in accordance with an embodiment of the invention;
FIG. 11 is a schematic view of stealth dicing of a SiC substrate using a picosecond laser, according to an embodiment of the present invention;
FIG. 12 is a schematic view of a bend strengthened glass cleaved SiC substrate according to an embodiment of the present invention;
fig. 13 is a schematic view of a cut metal plating film according to an embodiment of the present invention.
Reference numerals:
the device comprises a SiC substrate 10, a metal film 150, a manipulator 20, a glass carrier plate 30, a vent 310, a Si-based carrier plate 40, PI50, SOG60, tempered glass 70, UV glue 80 and a laser modified region S1.
Detailed Description
To further explain the technical means and effects of the present invention adopted to achieve the intended purpose, the present invention will be described in detail with reference to the accompanying drawings and preferred embodiments.
The description of the method flow in the present specification and the steps of the flow chart in the drawings of the present specification are not necessarily strictly performed by the step numbers, and the execution order of the method steps may be changed. Moreover, certain steps may be omitted, multiple steps may be combined into one step execution, and/or a step may be broken down into multiple step executions.
As shown in fig. 1, a method for manufacturing a semiconductor device according to an embodiment of the present invention includes:
b100, as shown in fig. 2, adsorbing the SiC substrate 10 with the front surface component prepared to the glass carrier 30;
for example, as shown in fig. 2, the SiC substrate 10 may be suction-fixed to the glass carrier plate 30 using a robot 20, or the SiC substrate 10 may be suction-fixed to the glass carrier plate 30 by a suction cup or other vacuum suction device.
B200, as shown in fig. 3, removing SOG60 between the SiC substrate 10 and the Si-based carrier plate 40, and then removing the Si-based carrier plate 40;
b300, as shown in fig. 4 and 5, turning over the SiC substrate 10, and sealing the SiC substrate 10 and the glass carrier plate 30 by using PI 50;
b400, as shown in FIG. 6, carrying out a back coating process on the SiC substrate 10 to form a metal film 150;
b500, as shown in fig. 7, cutting the metal film 150 according to a preset cutting track;
b600, as shown in fig. 8 to 11, the SiC substrate 10 after the cutting of the metal film 150 is bonded to the tempered glass 70 by the UV paste 80, and the SiC substrate 10 cutting process is performed.
According to the method for manufacturing the semiconductor device of the embodiment of the invention, when the SiC substrate 10 is transferred from the Si-based carrier plate 40 to the glass carrier plate 30, the SiC substrate 10 and the glass carrier plate 30 are first adsorbed and fixed, and then sealed by the PI 50. This improves the ease of transferring the SiC substrate 10 from the Si-based carrier plate 40 to the glass carrier plate 30.
According to some embodiments of the present invention, as shown in fig. 8-13, in step B500, after the SiC substrate 10 is attached to the tempered glass 70, the PI50 sealing the SiC substrate 10 and the glass carrier plate 30 is removed, and the glass carrier plate 30 is removed.
In some embodiments of the present invention, as shown in fig. 11-13, when cutting SiC substrate 10, first, picosecond laser light is used to invisibly cut SiC substrate 10 to cut a texture, as shown in fig. 11 and 12, where the texture may be understood as a laser modified region S1 formed on SiC substrate 10 by using a laser process. And then the SiC substrate 10 is cracked from the texture by adopting a splitting and film-expanding process. The surface of the SiC substrate 10 having a high hardness can be invisibly cut with a short picosecond laser wavelength and a high energy. After the cutting process is completed, the UV paste 80 may be irradiated with light to unseal the cut SiC substrate 10 and the tempered glass 70.
According to some embodiments of the invention, strengthened glass 70 in step B500 is a flexible strengthened glass 70. The flexible tempered glass 70 has good support and can be bent, and therefore, support cutting work can be performed on the SiC substrate 10 having a small thickness.
In some embodiments of the present invention, laser modified region S1 of SiC substrate 10 is subjected to tensile force and tension to cleave SiC substrate 10 by bending strengthened glass 70, as shown in fig. 12.
The SiC substrate 10 has high hardness, and cutting of the SiC substrate 10 having a small thickness is difficult. The method comprises the steps of firstly adopting picosecond laser to cut corresponding textures on the SiC substrate 10, and then bending the reinforced glass 70 to crack the SiC substrate 10, so that the SiC substrate 10 is cut.
According to some embodiments of the present invention, as shown in fig. 2, the glass carrier plate 30 is provided with a plurality of through ventilation holes 310 at intervals. Thereby, the robot 20 can suck the glass carrier plate 30 and the SiC substrate 10 through the vent 310.
In some embodiments of the present invention, the SiC substrate 10 and the glass carrier plate 30 are pre-fixed with a liquid before the SiC substrate 10 is adsorbed to the glass carrier plate 30. For example, the SiC substrate 10 and the glass carrier plate 30 may be pre-fixed by liquid tension by coating a water drop or a water film on the surface of the SiC substrate 10 or coating a water drop or a water film on the surface of the glass carrier plate 30 to improve the convenience of fixing the SiC substrate 10 and the glass carrier plate 30.
According to some embodiments of the present invention, when the SiC substrate 10 and the glass carrier plate 30 are pre-fixed with liquid, part of the edges of the SiC substrate 10 and the glass carrier plate 30 are sealed in step B300 while sealing the SiC substrate 10 and the glass carrier plate 30 with PI 50.
By sealing off the edges of the SiC substrate 10 and the glass carrier plate 30, a gap is formed between the SiC substrate 10 and the glass carrier plate 30, through which water droplets or a water film can evaporate, and the performance of the semiconductor device is prevented from being affected by the accumulation of water droplets or a water film.
A method for manufacturing a semiconductor device according to the present invention will be described in detail below in one specific embodiment with reference to the accompanying drawings. It is to be understood that the following description is only exemplary in nature and should not be taken as a specific limitation on the invention.
As shown in fig. 1, a method for manufacturing a semiconductor device includes:
b100, as shown in fig. 2, adsorbing the SiC substrate 10 with the front surface components prepared to the glass carrier plate 30 by the manipulator 20; the glass carrier 30 is provided with a plurality of through air holes 310 at intervals. Thereby, the robot 20 can suck the glass carrier plate 30 and the SiC substrate 10 through the vent 310.
The SiC substrate 10 and the glass carrier plate 30 may be pre-fixed with a liquid before the SiC substrate 10 is adsorbed to the glass carrier plate 30 by the robot 20. For example, the SiC substrate 10 and the glass carrier plate 30 may be pre-fixed by liquid tension by coating a water drop or a water film on the surface of the SiC substrate 10 or coating a water drop or a water film on the surface of the glass carrier plate 30 to improve the convenience of fixing the SiC substrate 10 and the glass carrier plate 30.
B200, as shown in fig. 3, removing the SOG60 between the SiC substrate 10 and the Si-based carrier plate 40, and then removing the Si-based carrier plate 40;
b300, as shown in fig. 4 and 5, turning over the SiC substrate 10, and sealing the SiC substrate 10 and the glass carrier plate 30 by using PI 50;
when the SiC substrate 10 and the glass carrier plate 30 are pre-fixed with the liquid, in step B300, when the SiC substrate 10 and the glass carrier plate 30 are sealed with the PI50, part of the edges of the SiC substrate 10 and the glass carrier plate 30 are sealed.
By sealing the edges of the SiC substrate 10 and the glass carrier plate 30, a gap is formed between the SiC substrate 10 and the glass carrier plate 30, through which water droplets or a water film can evaporate, and the performance of the semiconductor device is prevented from being affected by the accumulation of the water droplets or the water film.
B400, as shown in fig. 6, performing a metal plating on the back surface of the SiC substrate 10;
b500, as shown in fig. 7, cutting the metal film 150 according to a preset cutting track;
b600, as shown in fig. 8 to 12, after the SiC substrate 10 on which the metal film 150 is cut is attached to the tempered glass 70 by the UV paste 80, the PI50 sealing the SiC substrate 10 and the glass carrier 30 is removed, and the SiC substrate 10 is subjected to a cutting process.
As shown in fig. 11, when cutting the SiC substrate 10, a picosecond laser is used to cut a texture on the SiC substrate 10, and then a splitting and film-spreading process is used to split the SiC substrate 10 from the texture. Among them, the tempered glass 70 is a flexible tempered glass 70, and as shown in fig. 12, the SiC substrate 10 is cleaved by bending the tempered glass 70.
The SiC substrate 10 has high hardness, and cutting of the SiC substrate 10 having a small thickness is difficult. In the invention, firstly, picosecond laser is adopted to cut corresponding textures on the SiC substrate 10, and then the SiC substrate 10 is cracked by bending the reinforced glass 70, so that the cutting of the SiC substrate 10 is realized.
As described above, in the present invention, when the SiC substrate 10 is transferred from the Si-based carrier plate 40 to the glass carrier plate 30, the SiC substrate 10 and the glass carrier plate 30 are sealed by the PI50 after being adsorbed and fixed by the robot 20. This improves the ease of transferring the SiC substrate 10 from the Si-based carrier plate 40 to the glass carrier plate 30. Moreover, when the SiC substrate 10 is cut, a picosecond laser is used to cut a texture, and the SiC substrate 10 is cracked by bending the flexible glass, which improves the reliability of cutting the thin SiC substrate 10.
While the present invention has been described in connection with the preferred embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the appended claims.
Claims (9)
1. A method of manufacturing a semiconductor device, comprising:
b100, adsorbing the SiC substrate with the front surface component to a glass carrier plate;
b200, removing the SOG sealing the SiC substrate and the Si-based carrier plate, and then removing the Si-based carrier plate;
b300, overturning the SiC substrate, and sealing the SiC substrate and the glass carrier plate by adopting PI;
b400, performing a back surface coating process on the SiC substrate to form a metal film;
b500, cutting the metal film according to a preset cutting track;
and B600, adhering the SiC substrate subjected to the metal film cutting to the reinforced glass through UV glue, and performing the SiC substrate cutting process.
2. The method according to claim 1, wherein in step B500, after the SiC substrate is bonded to the tempered glass, the PI sealing the SiC substrate and the glass carrier is removed, and the glass carrier is removed.
3. The method for manufacturing a semiconductor device according to claim 1, wherein the step B100 includes:
and adsorbing the SiC substrate to the glass carrier plate by adopting a mechanical arm, a sucking disc or vacuum adsorption equipment.
4. The method of manufacturing a semiconductor device according to claim 1, wherein in the step B600, when the SiC substrate is cut, the SiC substrate is first invisibly cut by picosecond laser light, and then the SiC substrate is cleaved by a splitting and film-expanding process.
5. The method for manufacturing a semiconductor device according to claim 4, wherein the tempered glass in the step B600 is a flexible tempered glass.
6. The method for manufacturing a semiconductor device according to claim 5, wherein the SiC substrate is cleaved by bending the strengthened glass.
7. The method for manufacturing a semiconductor device according to claim 1, wherein the glass carrier plate is provided with a plurality of through vent holes at intervals.
8. The method according to claim 1, wherein in step B100, the SiC substrate and the glass carrier plate are pre-fixed with a liquid before the SiC substrate is adsorbed to the glass carrier plate.
9. The method for manufacturing a semiconductor device according to claim 8, wherein when the SiC substrate and the glass carrier plate are pre-fixed with liquid, in step B300, partial edges of the SiC substrate and the glass carrier plate are sealed when the SiC substrate and the glass carrier plate are sealed with PI.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210481213.5A CN114937620A (en) | 2022-05-05 | 2022-05-05 | Method for manufacturing semiconductor device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210481213.5A CN114937620A (en) | 2022-05-05 | 2022-05-05 | Method for manufacturing semiconductor device |
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| Publication Number | Publication Date |
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| CN114937620A true CN114937620A (en) | 2022-08-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210481213.5A Pending CN114937620A (en) | 2022-05-05 | 2022-05-05 | Method for manufacturing semiconductor device |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751400A (en) * | 2012-07-18 | 2012-10-24 | 合肥彩虹蓝光科技有限公司 | Cutting method of semiconductor component containing metal back plating |
| KR20180037477A (en) * | 2016-10-04 | 2018-04-12 | 주식회사 케이씨텍 | Substrate transfer unit and chemical mechanical polishing apparatus for large substrate having the substrate transfer unit, substrate transfering method |
| CN113228232A (en) * | 2018-12-29 | 2021-08-06 | 克利公司 | Carrier-assisted method for separating crystalline material along laser damage regions |
| CN114300344A (en) * | 2021-12-29 | 2022-04-08 | 绍兴同芯成集成电路有限公司 | Process for processing SiC wafer by using carrying disc |
-
2022
- 2022-05-05 CN CN202210481213.5A patent/CN114937620A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751400A (en) * | 2012-07-18 | 2012-10-24 | 合肥彩虹蓝光科技有限公司 | Cutting method of semiconductor component containing metal back plating |
| KR20180037477A (en) * | 2016-10-04 | 2018-04-12 | 주식회사 케이씨텍 | Substrate transfer unit and chemical mechanical polishing apparatus for large substrate having the substrate transfer unit, substrate transfering method |
| CN113228232A (en) * | 2018-12-29 | 2021-08-06 | 克利公司 | Carrier-assisted method for separating crystalline material along laser damage regions |
| CN114300344A (en) * | 2021-12-29 | 2022-04-08 | 绍兴同芯成集成电路有限公司 | Process for processing SiC wafer by using carrying disc |
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