CN114928702A - Image sensor pixel structure, image sensor and electronic equipment - Google Patents
Image sensor pixel structure, image sensor and electronic equipment Download PDFInfo
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- CN114928702A CN114928702A CN202210494687.3A CN202210494687A CN114928702A CN 114928702 A CN114928702 A CN 114928702A CN 202210494687 A CN202210494687 A CN 202210494687A CN 114928702 A CN114928702 A CN 114928702A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
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Abstract
The invention provides an image sensor pixel structure, an image sensor and an electronic device. The image sensor pixel structure comprises: the photoelectric conversion circuit comprises a photoelectric conversion circuit, a transmission circuit, a first reset circuit, a second reset circuit, a source follower circuit and a row selection circuit; one end of the photoelectric conversion circuit is grounded, and the other end of the photoelectric conversion circuit is connected between the first end of the transmission circuit and the first end of the first reset circuit; second ends of the transmission circuit, the second reset circuit and the source follower circuit are connected with the floating diffusion node; the second end of the first reset circuit is connected with the first end of the second reset circuit and the first end of the source follower circuit and then is connected with a power supply node; the third end of the source follower circuit is connected with the first end of the row selection circuit; the second terminal of the row selection circuit is connected to a column bit line. The invention can reduce the smear phenomenon of the image sensor, improve the signal-to-noise ratio of the image sensor, make the image sensor more suitable for being used in the dark environment, and improve the applicability of the image sensor.
Description
Technical Field
The present invention relates to the field of solid-state image sensors, and in particular, to an image sensor pixel structure, an image sensor and an electronic device.
Background
The image sensor is a high-end technical element for converting optical signals into electrical signals by using an optoelectronic device, and is widely applied to the fields of security protection, photography, automatic driving, medical treatment and the like. When the imaging device is used at night, the image sensor is required to have extremely high signal-to-noise ratio, and the consistency among pixel units is high.
A 4-transistor pixel structure is commonly used in a current Complementary Metal Oxide Semiconductor (CMOS) image sensor, and as shown in fig. 1, the 4-transistor pixel structure includes: a photodiode PD1, a charge transfer transistor Q10, a reset transistor Q20, a source follower transistor Q30, and a select transistor Q40. In operation, first, the selection transistor Q40 is turned on under the control of the selection signal Sel, and the corresponding pixel structure is selected. At the same time, the Reset transistor Q20 is turned on under the control of the Reset signal Reset, and resets a Floating Diffusion (FD) to VDD. At the same time, the photodiode PD1 is also constantly generating photo-generated charge under exposure conditions. When the exposure is finished, the charge transfer transistor Q10 is turned on under the control of the transfer signal Tx, photo-generated charges accumulated by the photodiode PD1 during the exposure are transferred to the reset floating diffusion node FD, and then the voltage change of the floating diffusion node FD is reflected to the output terminal Vout of the pixel structure through the source follower transistor Q30, thereby reflecting the voltage change during the exposure.
However, because the PD region of the photodiode is relatively large, when the charge transfer transistor is turned on, photo-generated charges formed in the PD region of the photodiode cannot be completely transferred to the floating diffusion node through the charge transfer transistor, so that during the next exposure, photo-generated charges of the last exposure are stored in the PD region of the photodiode, which causes a smear phenomenon, thereby reducing the signal-to-noise ratio of the image sensor and affecting the performance of the image sensor.
Disclosure of Invention
The embodiment of the invention provides an image sensor pixel structure, an image sensor and electronic equipment, and aims to solve the problems that the pixel structure of the existing image sensor can generate a smear phenomenon, and the performance needs to be improved.
In a first aspect, an embodiment of the present invention provides an image sensor pixel structure, including: the photoelectric conversion circuit comprises a photoelectric conversion circuit, a transmission circuit, a first reset circuit, a second reset circuit, a source follower circuit and a row selection circuit;
the photoelectric conversion circuit is grounded at one end, connected between the first end of the transmission circuit and the first end of the first reset circuit at the other end, and used for accumulating photo-generated charges based on illumination conditions in the exposure process;
the second end of the transmission circuit is connected with the floating diffusion node and used for transmitting accumulated photo-generated charges to the floating diffusion node under the control of a transmission signal after exposure is finished so as to enable the voltage of the floating diffusion node to be changed into a second voltage from the reset first voltage;
the second end of the first reset circuit is connected with the first end of the second reset circuit and the first end of the source follower circuit and then is connected with a power supply node, and the first reset circuit is used for resetting the voltage of the photoelectric conversion circuit under the control of a reset signal before exposure;
the second end of the second reset circuit is connected with the floating diffusion node and is used for resetting the voltage of the floating diffusion node to the first voltage under the control of the reset signal before exposure;
a second end of the source follower circuit is connected with the floating diffusion node, and a third end of the source follower circuit is connected with a first end of the row selection circuit and is used for amplifying and outputting the first voltage or the second voltage;
and a second end of the row selection circuit is connected with the column bit line and is used for outputting the amplified first voltage or the discharged second voltage to the column bit line under the control of the row selection signal.
In one possible implementation, the first reset circuit includes: a first reset transistor;
and the source electrode of the first reset transistor is connected between the other end of the photoelectric conversion circuit and the first end of the transmission circuit, the drain electrode of the first reset transistor is connected with the first end of the second reset circuit and the first end of the source follower circuit and then connected with a power supply node, and the grid electrode of the first reset transistor is used for inputting the reset signal.
In a possible implementation manner, the pixel structure of the image sensor further includes: a negative feedback circuit;
and the negative feedback circuit has an inverting input end connected between the second end of the row selection circuit and the column bit line, an output end connected with the second end of the first reset circuit, the first end of the second reset circuit and the first end of the source follower circuit, and a positive input end for inputting a reference voltage, and is used for controlling the amplified first voltage output to the column bit line to be the reference voltage under the control of the reset signal before exposure.
In one possible implementation, the negative feedback circuit includes: a third reset transistor and an operational amplifier;
a source of the third reset transistor is connected between the second end of the row selection circuit and the column bit line, a drain of the third reset transistor is connected with the inverting input end of the operational amplifier, and a gate of the third reset transistor is used for inputting the reset signal;
and a positive phase input end of the operational amplifier is used for inputting a reference voltage, and an output end of the operational amplifier is respectively connected with the second end of the first reset circuit, the first end of the second reset circuit and the first end of the source follower circuit.
In one possible implementation, the transmission circuit includes: a charge transfer transistor;
the source of the charge transfer transistor is connected with the other end of the photoelectric conversion circuit, the drain of the charge transfer transistor is connected with the floating diffusion node, and the grid of the charge transfer transistor is used for inputting a transfer signal.
In one possible implementation, the second reset circuit includes: a second reset transistor;
and the source electrode of the second reset transistor is connected with the floating diffusion node, the drain electrode of the second reset transistor is connected with the second end of the first reset circuit and the first end of the source follower circuit respectively and then is connected with a power supply node, and the grid electrode of the second reset transistor is used for inputting the reset signal.
In one possible implementation, the source follower circuit includes: a source follower transistor;
and the grid electrode of the source following transistor is connected with the floating diffusion node, the drain electrode of the source following transistor is respectively connected with the second end of the first reset circuit and the first end of the second reset circuit and then connected with a power supply node, and the source electrode of the source following transistor is connected with the first end of the row selection circuit.
In one possible implementation, the row selection circuit includes: a row select transistor;
and the drain electrode of the row selection transistor is connected with the third end of the source follower circuit, the source electrode of the row selection transistor is connected with the column bit line, and the grid electrode of the row selection transistor is used for inputting the row selection signal.
In a second aspect, an embodiment of the present invention provides an image sensor, which includes the image sensor pixel structure as described in the first aspect or any one of the possible implementation manners of the first aspect, arranged in rows and columns.
In a third aspect, embodiments of the present invention provide an electronic device, including an image sensor as described in the second aspect above.
The embodiment of the invention provides an image sensor pixel structure, an image sensor and electronic equipment, wherein the image sensor pixel structure comprises a photoelectric conversion circuit, a transmission circuit, a first reset circuit, a second reset circuit, a source follower circuit and a row selection circuit, compared with the existing image sensor pixel structure, the image sensor pixel structure can reset the voltage of a floating diffusion node and the voltage of the photoelectric conversion circuit simultaneously under the control of a reset signal by additionally arranging the first reset circuit at the other end of the photoelectric conversion circuit so as to reset the voltage of the photoelectric conversion circuit, clear photo-generated charges stored in the photoelectric conversion circuit in the last exposure process, reduce the smear phenomenon of the image sensor, improve the signal-to-noise ratio of the image sensor, improve the performance of the image sensor and enable the image sensor to be more suitable for being used in a dark environment, the applicability of the image sensor is improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a schematic diagram of a 4-tube pixel structure in the prior art according to an embodiment of the present invention;
FIG. 2 is a diagram illustrating a pixel structure of an image sensor according to an embodiment of the present invention;
FIG. 3 is a diagram illustrating a pixel structure of an image sensor according to another embodiment of the present invention;
FIG. 4 is a diagram illustrating a pixel structure of an image sensor according to another embodiment of the present invention;
fig. 5 is a timing diagram of control signals of a pixel structure of an image sensor according to an embodiment of the present invention.
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth such as particular system structures, techniques, etc. in order to provide a thorough understanding of the embodiments of the invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the following description is made by way of specific embodiments with reference to the accompanying drawings.
Example one
Referring to fig. 2, an image sensor pixel structure provided by the embodiment of the present invention may include a photoelectric conversion circuit 10, a transfer circuit 20, a first reset circuit 60, a second reset circuit 30, a source follower circuit 40, and a row selection circuit 50.
The photoelectric conversion circuit 10 has one end connected to ground and the other end connected between the first end of the transmission circuit 20 and the first end of the first reset circuit 60, and is configured to accumulate photo-generated charges based on light conditions during exposure.
And a second end of the transfer circuit 20 is connected to the floating diffusion node FD, and is configured to transfer the accumulated photo-generated charges to the floating diffusion node FD under the control of the transfer signal Tx after the exposure is finished, so that the voltage of the floating diffusion node FD is changed from the reset first voltage to the second voltage.
The first Reset circuit 60 has a second terminal connected to the first terminal of the second Reset circuit 30 and the first terminal of the source follower circuit 40, and then connected to the power supply node VDD, and is configured to Reset the voltage of the photoelectric conversion circuit 10 under the control of the Reset signal Reset before exposure.
And a second Reset circuit 30 having a second terminal connected to the floating diffusion node FD for resetting the voltage of the floating diffusion node FD before exposure under the control of a Reset signal Reset.
And a second terminal of the source follower circuit 40 is connected to the floating diffusion node FD, and a third terminal thereof is connected to a first terminal of the row selection circuit 50, and is configured to amplify and output the first voltage or the second voltage.
And a second end of the row selection circuit 50 is connected to the column bit line, and is configured to output the amplified first voltage or the discharged second voltage to the column bit line under the control of the row selection signal Sel.
As shown in fig. 2, the second terminal of the row selection circuit 50 is further connected to one terminal of a bias current source ibias, and the other terminal of the bias current source ibias is grounded, so that a source follower readout circuit is configured based on the source follower circuit 40, the row selection circuit 50, and the bias current source ibias, and the amplified first voltage or the discharged second voltage is output to the column bit line under the control of the row selection signal Sel.
With reference to fig. 5, when the pixel structure of the image sensor according to the embodiment of the present invention works, first, the electric potential of the row selection signal Sel changes from low to high, so as to control the row selection circuit 50 in the pixel structure of the image sensor to be turned on, and further select the pixel structure of the image sensor where the row selection circuit 50 is located, so as to output the output result to the column bit line when the output terminal Vout of the pixel structure of the image sensor has an output. Meanwhile, the potential of the Reset signal Reset changes from low to high, which controls the first Reset circuit 60 and the second Reset circuit 30 to be turned on, and further resets the voltages of the negative terminal of the photoelectric conversion circuit 10 and the floating diffusion node FD at the same time, and because the voltages of the negative terminal of the photoelectric conversion circuit 10 and the floating diffusion node FD are Reset at the same time, the photogenerated charges stored in the photoelectric conversion circuit 10 during the last exposure process can be cleared while the voltage of the floating diffusion node FD is Reset to the first voltage. At this time, since the potential of the row selection signal Sel is always high, after the voltage of the floating diffusion node FD is reset to the first voltage, the source follower circuit 40 amplifies and outputs the first voltage, and the row selection circuit 50 outputs the amplified first voltage (may also be referred to as an initial voltage) to the column bit line. With continued reference to fig. 4, the photoelectric conversion circuit 10 accumulates photo-generated charges based on the lighting conditions for a period of time after the reset is completed (which may also be referred to as during exposure). Then, the potential of the transmission signal Tx changes from low to high, the transmission circuit 20 is turned on, and the accumulated photogenerated charges are transmitted to the floating diffusion node FD, and the voltage of the floating diffusion node FD changes from the first voltage after reset to the second voltage. At this time, since the potential of the row selection signal Sel is always high, the source follower circuit 40 amplifies and outputs the second voltage, and the amplified second voltage (may also be referred to as an initial voltage) is output to the column bit line via the row selection circuit 50. And the difference between the amplified second voltage and the initial voltage, that is, the electrical signal converted by the photoelectric conversion circuit from the optical signal corresponding to the illumination condition in the exposure process.
According to the embodiment of the invention, the first reset circuit is additionally arranged at the other end of the photoelectric conversion circuit, so that the voltage of the floating diffusion node and the voltage of the photoelectric conversion circuit can be reset simultaneously under the control of the reset signal, and the voltage of the photoelectric conversion circuit is reset, and the photo-generated charges stored in the photoelectric conversion circuit in the last exposure process can be eliminated, so that the smear phenomenon of the image sensor is reduced, the signal-to-noise ratio of the image sensor is improved, the performance of the image sensor is improved, the image sensor is more suitable for being used in a dark environment, and the applicability of the image sensor is improved.
Alternatively, as shown in fig. 2 and 3, the first reset circuit 60 may include: a first reset transistor Q5.
The first Reset transistor Q5 has a source connected between the other end of the photoelectric conversion circuit 10 and the first end of the transmission circuit 20, a drain connected to the first end of the second Reset circuit 30 and the first end of the source follower circuit 40, a power supply node VDD, and a gate for inputting a Reset signal Reset.
Alternatively, the second reset circuit 30 may include: and a second reset transistor Q2.
The second Reset transistor Q2 has a source connected to the floating diffusion node FD, a drain connected to the second terminal of the first Reset circuit 60 and the first terminal of the source follower circuit 40, respectively, and a gate for inputting a Reset signal Reset.
Here, the photoelectric conversion circuit 10 may include a photodiode FD, and the drain of the first reset transistor Q5 may be connected to the first terminal of the second reset circuit 30 and the first terminal of the source follower circuit 40 to connect the common power supply node VDD, or may be separately connected to the required power supply nodes.
The first Reset transistor Q5 and the second Reset transistor Q2 of this embodiment can be turned on simultaneously under the effect of the Reset signal Reset, and then Reset the voltages of the negative electrode terminal of the photoelectric conversion circuit 10 and the floating diffusion node FD, and when resetting the voltage of the floating diffusion node FD to the first voltage, clear the photo-generated charges stored in the photoelectric conversion circuit 10 during the last exposure process, thereby reducing the smear phenomenon of the image sensor, reducing noise, improving the signal-to-noise ratio of the image sensor, and improving the performance of the image sensor.
Alternatively, the transmission circuit 20 may include: a charge transfer transistor Q1.
The charge transfer transistor Q1 has a source connected to the other end of the photoelectric conversion circuit 10, a drain connected to the floating diffusion node FD, and a gate for receiving a transfer signal Tx.
The charge transfer transistor Q1 in this embodiment is equivalent to a switch, and before exposure, i.e., during reset, the charge transfer transistor is turned off by the transmission signal Tx, and after exposure is completed, the charge transfer transistor Q1 is turned on by the transmission signal Tx, so as to transfer the photo-generated charges accumulated by the photoelectric conversion circuit to the floating diffusion node FD during the whole exposure process.
Alternatively, the source follower circuit 40 may include: the source follows transistor Q3.
The source follower transistor Q3 has a gate connected to the floating diffusion node FD, a drain connected to the second terminal of the first reset circuit 60 and the first terminal of the second reset circuit 30, respectively, and then connected to the power supply node VDD, and a source connected to the first terminal of the row selection circuit 50.
Alternatively, the row selection circuit 50 may include: a row select transistor Q4.
The drain of the row selection transistor Q4 is connected to the third terminal of the source follower circuit 40, the source thereof is connected to the column bit line, and the gate thereof is used for inputting a row selection signal Sel.
In this embodiment, the source follower circuit 40, the row selection circuit 50, and the bias current source ibias may constitute a source follower readout circuit to output the amplified first voltage or the discharged second voltage to the column bit line under the control of the row selection signal Sel.
As another embodiment of the present invention, referring to fig. 4, the image sensor pixel structure may further include a negative feedback circuit 70.
The negative feedback circuit 70 has an inverting input terminal connected between the second terminal of the row selection circuit 50 and the column bit line, an output terminal connected to the second terminal of the first reset circuit 60, the first terminal of the second reset circuit 30, and the first terminal of the source follower circuit 40, and a non-inverting input terminal for inputting the reference voltage Vref. The negative feedback circuit 70 is used to control the amplified first voltage output to the column bit line to be the reference voltage Vref before exposure under the control of the Reset signal Reset.
Alternatively, as shown in fig. 4, the negative feedback circuit 70 may include: a third reset transistor Q6 and an operational amplifier U1.
The source of the third Reset transistor Q6 is connected between the second end of the row selection circuit 50 and the column bit line, the drain is connected to the inverting input terminal of the operational amplifier U1, and the gate is used for inputting a Reset signal Reset.
And an operational amplifier U1 having a non-inverting input terminal for inputting the reference voltage Vref and an output terminal respectively connected to the second terminal of the first reset circuit 60, the first terminal of the second reset circuit 30 and the first terminal of the source follower circuit 40.
In the prior art, when an image sensor is configured by image sensor pixel structures, even though the same power supply node VDD is input to each image sensor pixel structure in the image sensor during reset, due to differences in manufacturing processes, environments and the like, the initial voltage output by the output terminal Vout of each image sensor pixel structure may also be different, which further causes poor consistency of each image sensor pixel structure in the image sensor, and affects use of the image sensor in a dark environment.
In this embodiment, as can be seen from fig. 4, the negative feedback circuit 70 in the pixel structure of the image sensor is also controlled by the Reset signal Reset. That is to say, when the image sensor pixel structure according to the embodiment of the present invention operates, under the control of the Reset signal Reset, the first Reset circuit 60, the second Reset circuit 30 and the negative feedback circuit 70 are turned on at the same time, and at this time, since the inverting input terminal of the negative feedback circuit 70 is connected between the second terminal of the row selection circuit 50 and the column bit line (i.e., connected to the output terminal Vout), and the non-inverting input terminal of the negative feedback circuit 70 is used for inputting the reference voltage Vref, the initial voltage originally output to the column bit line can be controlled to be the reference voltage Vref through the negative feedback circuit 70. When the image sensor pixel structures of the embodiments of the present invention are arranged in rows and columns to form an image sensor, if the reference voltage Vref input by each image sensor pixel structure is the same, the output of each image sensor pixel structure in the image sensor at the output terminal Vout is the reference voltage Vref during reset. Furthermore, the consistency among pixel structures of the image sensors is improved, so that the formed image sensor is more suitable for being used in a dark environment, and the applicability of the image sensor is improved.
Example two
The invention further comprises an image sensor comprising the pixel structure of the image sensor according to any of the embodiments described above arranged in rows and columns, and having the same advantages as the pixel structure of the image sensor according to any of the embodiments described above.
EXAMPLE III
The invention also comprises an electronic device which comprises the image sensor of the embodiment and has the same beneficial effects as the image sensor of the embodiment.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and reference may be made to the related descriptions of other embodiments for parts that are not described or illustrated in a certain embodiment.
The above examples are only intended to illustrate the technical solution of the present invention, and not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the embodiments of the present invention, and they should be construed as being included therein.
Claims (10)
1. An image sensor pixel structure, comprising: the photoelectric conversion circuit comprises a photoelectric conversion circuit, a transmission circuit, a first reset circuit, a second reset circuit, a source follower circuit and a row selection circuit;
one end of the photoelectric conversion circuit is grounded, the other end of the photoelectric conversion circuit is connected between the first end of the transmission circuit and the first end of the first reset circuit, and the photoelectric conversion circuit is used for accumulating photo-generated charges based on illumination conditions in the exposure process;
the second end of the transmission circuit is connected with the floating diffusion node and is used for transmitting accumulated photo-generated charges to the floating diffusion node under the control of a transmission signal after exposure is finished so as to change the voltage of the floating diffusion node from the reset first voltage to a second voltage;
the second end of the first reset circuit is connected with the first end of the second reset circuit and the first end of the source follower circuit and then is connected with a power supply node, and the first reset circuit is used for resetting the voltage of the photoelectric conversion circuit under the control of a reset signal before exposure;
the second end of the second reset circuit is connected with the floating diffusion node and is used for resetting the voltage of the floating diffusion node to the first voltage under the control of the reset signal before exposure;
a second end of the source follower circuit is connected with the floating diffusion node, and a third end of the source follower circuit is connected with a first end of the row selection circuit and is used for amplifying and outputting the first voltage or the second voltage;
and the second end of the row selection circuit is connected with the column bit line and is used for outputting the amplified first voltage or the discharged second voltage to the column bit line under the control of the row selection signal.
2. The image sensor pixel structure of claim 1, wherein the first reset circuit comprises: a first reset transistor;
and the source electrode of the first reset transistor is connected between the other end of the photoelectric conversion circuit and the first end of the transmission circuit, the drain electrode of the first reset transistor is connected with the first end of the second reset circuit and the first end of the source follower circuit and then connected with a power supply node, and the grid electrode of the first reset transistor is used for inputting the reset signal.
3. The image sensor pixel structure of claim 1, further comprising: a negative feedback circuit;
and the negative feedback circuit has an inverting input end connected between the second end of the row selection circuit and the column bit line, an output end connected with the second end of the first reset circuit, the first end of the second reset circuit and the first end of the source follower circuit, and a positive input end for inputting a reference voltage, and is used for controlling the amplified first voltage output to the column bit line to be the reference voltage under the control of the reset signal before exposure.
4. The image sensor pixel structure of claim 1, wherein the negative feedback circuit comprises: a third reset transistor and an operational amplifier;
a source of the third reset transistor is connected between the second end of the row selection circuit and the column bit line, a drain of the third reset transistor is connected with the inverting input end of the operational amplifier, and a gate of the third reset transistor is used for inputting the reset signal;
and a positive phase input end of the operational amplifier is used for inputting a reference voltage, and an output end of the operational amplifier is respectively connected with the second end of the first reset circuit, the first end of the second reset circuit and the first end of the source follower circuit.
5. The image sensor pixel structure of any of claims 1-4, wherein the transfer circuit comprises: a charge transfer transistor;
the source of the charge transfer transistor is connected with the other end of the photoelectric conversion circuit, the drain of the charge transfer transistor is connected with the floating diffusion node, and the grid of the charge transfer transistor is used for inputting a transfer signal.
6. The image sensor pixel structure of any of claims 1-4, wherein the second reset circuit comprises: a second reset transistor;
and the source electrode of the second reset transistor is connected with the floating diffusion node, the drain electrode of the second reset transistor is connected with the second end of the first reset circuit and the first end of the source follower circuit respectively and then is connected with a power supply node, and the grid electrode of the second reset transistor is used for inputting the reset signal.
7. The image sensor pixel structure of any of claims 1-4, wherein the source follower circuit comprises: a source follower transistor;
and the grid electrode of the source following transistor is connected with the floating diffusion node, the drain electrode of the source following transistor is respectively connected with the second end of the first reset circuit and the first end of the second reset circuit and then connected with a power supply node, and the source electrode of the source following transistor is connected with the first end of the row selection circuit.
8. The image sensor pixel structure of any of claims 1-4, wherein the row select circuit comprises: a row select transistor;
and the drain electrode of the row selection transistor is connected with the third end of the source follower circuit, the source electrode of the row selection transistor is connected with the column bit line, and the grid electrode of the row selection transistor is used for inputting the row selection signal.
9. An image sensor comprising the image sensor pixel structure of any one of claims 1 to 8 arranged in rows and columns.
10. An electronic device characterized by comprising an image sensor as claimed in claim 9.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210494687.3A CN114928702A (en) | 2022-05-07 | 2022-05-07 | Image sensor pixel structure, image sensor and electronic equipment |
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| CN202210494687.3A CN114928702A (en) | 2022-05-07 | 2022-05-07 | Image sensor pixel structure, image sensor and electronic equipment |
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