CN114915158A - Method for setting intermittent working dead zone of SiC MOSFET (Metal oxide semiconductor field Effect transistor) Boost converter in synchronous working mode - Google Patents
Method for setting intermittent working dead zone of SiC MOSFET (Metal oxide semiconductor field Effect transistor) Boost converter in synchronous working mode Download PDFInfo
- Publication number
- CN114915158A CN114915158A CN202210649514.4A CN202210649514A CN114915158A CN 114915158 A CN114915158 A CN 114915158A CN 202210649514 A CN202210649514 A CN 202210649514A CN 114915158 A CN114915158 A CN 114915158A
- Authority
- CN
- China
- Prior art keywords
- sic mosfet
- converter
- voltage
- dead zone
- boost converter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000001360 synchronised effect Effects 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 title abstract description 5
- 230000005669 field effect Effects 0.000 title abstract description 4
- 229910044991 metal oxide Inorganic materials 0.000 title abstract description 4
- 150000004706 metal oxides Chemical class 0.000 title abstract description 4
- 238000004364 calculation method Methods 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 description 13
- 230000001939 inductive effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005034 decoration Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000004422 calculation algorithm Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/38—Means for preventing simultaneous conduction of switches
- H02M1/385—Means for preventing simultaneous conduction of switches with means for correcting output voltage deviations introduced by the dead time
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0051—Diode reverse recovery losses
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Rectifiers (AREA)
Abstract
The invention discloses a method for setting an intermittent working dead zone of a SiC MOSFET (metal oxide semiconductor field effect transistor) Boost converter in a synchronous working mode, which comprises the following steps: obtaining the actual duty ratio D and the input side voltage V of the converter i And a voltage V at the output side o A main switch tube M 1 The dead time before switching on is set to T ahead (ii) a Obtaining related parameter information of SiC MOSFET device and drive circuit thereof, and connecting main switch tube M 1 The dead time after the shutdown is set to T after . The above steps are completed in n switching cycles and the method is performed with n cycles as one cycle time. The dead zone setting method of the present invention takes into account both the fact that the converter is operating in discontinuous mode,and the capacitive loss of the SiC MOSFET and the follow current loss of the diode are considered, the efficiency of the converter in an intermittent working mode is improved, an additional hardware circuit is not needed, the cost is low, and the stability of the circuit is enhanced.
Description
Technical Field
The invention relates to the technical field of converters, in particular to a method for setting an intermittent working dead zone of a SiC MOSFET (metal oxide semiconductor field effect transistor) Boost converter in a synchronous working mode.
Background
With the development of power electronic technology, a new third generation wide bandgap semiconductor power device represented by a SiC MOSFET has advantages of higher switching frequency, lower on-state resistance, stronger withstand voltage capability, and the like, and is gradually replacing Si-based power devices in many cases. The Boost converter adopting the SiC MOSFET device can be applied to the occasions with high frequency and high efficiency. When the converter operates in a synchronous working mode, the on-state loss during operation can be reduced by utilizing the lower on-resistance of the SiC MOSFET, and the efficiency of the converter operating under the condition of continuous inductive current is improved.
However, due to the existence of the synchronous working mode, the Boost converter not only has the risk of bridge arm direct connection, but also when the converter works in the inductive current discontinuous mode, partial energy of the output end can pass through the inactive tube M 2 The channel of (a) flows back into the input terminal, causing energy loss. Although the traditional dead zone setting scheme can ensure that the risk of bridge arm direct connection of the circuit cannot occur, an additional hardware circuit is needed, the situation that the SiC MOSFET Boost converter in the synchronous working mode operates in an inductive current discontinuous mode and energy loss caused by diode follow current and an output capacitor are not considered, and the efficiency of the converter can be greatly reduced.
Disclosure of Invention
The purpose of the invention is as follows: aiming at the prior art, the method for setting the intermittent working dead zone of the SiC MOSFET Boost converter in the synchronous working mode is provided, so that the efficiency of the converter in the intermittent working mode is improved, and the stability of a circuit is enhanced.
The technical scheme is as follows: the method for setting the intermittent working dead zone of the SiC MOSFET Boost converter in the synchronous working mode comprises the following steps:
s1, acquiring actual duty ratio D and input side voltage V of the converter i And a voltage V at the output side o ；
S2, main switch tube M of converter 1 The dead time before switching on is set to T ahead ：
Wherein, T s Is the switching period of the converter;
s3, acquiring relevant parameter information of the SiC MOSFET device and the drive circuit thereof, wherein the relevant parameter information comprises the drive resistance R of the SiC MOSFET g,all An input capacitor C iss (ii) a Threshold voltage V for channel turn-on of SiC MOSFET th Minimum value of driving voltage V GSmin And maximum value V of driving voltage GSmax (ii) a Amount of charge Q of SiC MOSFET at present output voltage M1 (V o ) And output charge Q of anti-parallel diode diode (V o )；
S4, master switch tube M 1 The dead time after the shutdown is set to T after ：
And L is an inductance value of the input side of the Boost converter.
Further, if the calculation of the value of the dead time requires n switching cycles, the method is performed with n cycles as one cycle time.
Has the advantages that: the dead zone setting method not only considers the situation that the SiC MOSFET Boost converter works in an intermittent mode, but also considers the capacitive loss of the SiC MOSFET and the follow current loss of the diode, improves the efficiency of the converter in the intermittent working mode, does not need an additional hardware circuit, has low cost and enhances the stability of the circuit.
Drawings
Fig. 1 is a schematic circuit structure diagram of a SiC MOSFET Boost converter in a synchronous operating mode;
FIG. 2 is a flow chart of a method for setting a dead zone of a SiC MOSFET Boost converter in a synchronous working mode;
FIG. 3 is an ideal drive waveform and inductor current waveform for two dead time setting methods in discontinuous mode;
FIG. 4 is a timing diagram of actual driving in one cycle;
FIG. 5 shows the main switch tube M 1 A partial driving timing diagram of the dead zone after the shutdown;
fig. 6 is a waveform of an inductor current using a conventional dead zone setting method when the inductor current is interrupted;
fig. 7 is a waveform of an inductor current using the dead zone setting method of the present invention under the same operating condition.
Detailed Description
The invention is further explained below with reference to the drawings.
As shown in fig. 1, is a typical SiC MOSFET Boost converter circuit. Wherein M is 1 、M 2 Are two SiC MOSFETs, D 1 、D 2 Are respectively M 1 And M 2 An anti-parallel freewheeling diode of (1); v i A capacitor with input end voltage, input side inductance L and output end C, and V o Is the output terminal voltage. The method for setting the intermittent working dead zone of the SiC MOSFET Boost converter in the synchronous mode can effectively improve the efficiency of the converter working in the inductive current intermittent mode, does not need an additional hardware circuit, is low in cost and improves the stability of the circuit.
The operation process of the SiC MOSFET Boost converter in the synchronous operation mode is described below by taking fig. 1 as an example.
First, M 1 Opening, the current circulation path is: positive pole of input end power supply, inductor L, M 1 The channel of (2), the negative pole of the input end power supply; then, M 1 Begins to turn off, with a gradual decrease in current in its channel. After a dead time, M 2 Start of opening, M 2 The channel (2) starts to follow current, and the current circulation path is as follows: positive pole of input end power supply, inductor L, M 2 The channel of the input terminal, the load of the output terminal and the negative electrode of the power supply of the input terminal. When M is 2 Turn it off after a period of time, M 2 The current in the channel gradually decreases; after a dead time, M 1 And is turned on again. The operation process of the SiC MOSFET Boost converter in the synchronous operation mode is described above.
As shown in fig. 2, the method for setting the discontinuous operation dead zone of the SiC MOSFET Boost converter in the synchronous mode according to the embodiment of the present invention includes the following steps:
s1, acquiring actual duty ratio D and input side voltage V of the converter i And a voltage V at the output side o 。
In the present invention, the voltage levels on the input and output sides can be obtained by a dc voltage sensor.
S2, as shown in fig. 3, when the circuit operates in the discontinuous mode of the inductor current, part of the energy at the output end will pass through the inactive tube M 2 The channel of (a) is reversely flowed into the input terminal, so that it is necessary to apply the inactive transistor M at the time when the inductor current is decreased to 0 2 The shut down is performed to avoid this. Using the obtained circuit parameters, the main switch tube M is connected according to the following formula 1 The dead time before switching on is set to T ahead ；
Wherein, T s Is the switching period of the converter.
And S3, acquiring relevant parameter information of the SiC MOSFET device and the drive circuit thereof.
The relevant parameter information required to be obtained in the method is obtained from a corresponding data manual provided by manufacturers of SiC MOSFETs and drivers thereof. Which comprises the following steps: drive resistor R when using SiC MOSFET g,all (ii) a Input capacitance C iss (ii) a Threshold voltage V for channel turn-on of SiC MOSFET th Minimum value of driving voltage V GSmin And maximum value of driving voltage V GSmax (ii) a Amount of charge Q of SiC MOSFET at present output voltage M1 (V o ) And the output charge Q of the anti-parallel diode diode (V o )；
S4 current main switch tube M 1 After the switch-off, the output capacitor of the SiC MOSFET begins to discharge to generate current, and the current in the circuit can be changed from M 1 Gradually changing the channel to anti-parallel diode freewheeling, e.g.An undesirable dead band setting results in capacitive losses and additional diode freewheeling losses. In the setting of a main switch tube M 1 The dead time after the shutdown needs to fully consider the two losses, so the dead time of the part consists of two parts: firstly, the freewheeling time of an anti-parallel diode; the second is the discharge time taking into account the capacitive losses of the SiC MOSFET. Wherein the freewheel time t of the antiparallel diode nec The expression of (a) is:
and the discharge time t of the output capacitor of the SiC MOSFET and the anti-parallel diode dc The expression of (a) is:
thus the main switch tube M 1 Dead time T after shutdown after Should be set to t dc And t nec The sum of the two parts:
the steps S1 to S4 are completed in n switching cycles, and the value of the dead time is calculated in real time in n switching cycles, that is, n is the minimum number of cycles that can implement the converter control basic algorithm and the dead time calculation. For example, when the switching frequency is high, the operation time required by the converter is between 3 cycles and 4 cycles, and then n is 4. The method is performed with n cycles as a cycle time, n being a positive integer.
For a specific embodiment, as shown in fig. 2, a method for setting an intermittent operation dead zone of a SiC MOSFET Boost converter in a synchronous operation mode may include the following steps:
s101, measuring and obtaining actual duty ratio D and input side voltage V of the converter i And a voltage V at the output side o 。
S102, using the obtained circuit parameters to manage the main switch M 1 The dead time before switching on is set to T ahead 。
As shown in FIG. 3, t 1 To t 4 Is a main switch tube M 1 The waveform of the other time periods is the same as the one of the complete switching period. For convenience of analysis, the drive waveform of the SiC MOSFET in the current transformer adopts an ideal waveform. As shown in phantom in fig. 3, conventional dead time settings result in a portion of the circuit where the inductor current is less than 0 when the converter is operating in inductor current discontinuous mode.
The change in the course of the circuit state of the converter in a cycle is as follows:
at t 1 To t 2 During period M 1 Opening, M 2 In an off state. Input voltage V i To boost inductances L and M 1 The parasitic capacitor is charged, the output capacitor C discharges to the load R, and the instantaneous output voltage drops;
at t 2 To t 3 Period, M 2 Opening, M 1 In an off state. Input voltage V i And the inductor L charges the capacitor C and the load R at the output side to output a voltage V o Will gradually rise;
at t 3 At that time, the inductor current drops to 0;
at t 3 To t 4 Meanwhile, due to the existence of the synchronous operation mode, the direction of the current flowing through the inductor is negative, and the absolute value of the current is increased. At this time, the output capacitor C discharges to the load R, and the output voltage V o Will drop.
For the main switch tube M 1 Dead time T before switching on ahead The inactive tube M 2 Should be at t 3 Is turned off at any time, otherwise part of the energy stored in the output capacitor C will pass through M 2 Will flow into the input power supply and the current in the boost inductor will also become negative.
As can be seen from fig. 4:
T ahead ＝(1-D)T s -t f -T ff +t f
can be simplified as follows:
T ahead ＝(1-D)T s -T ff
wherein D is the actual duty cycle of the circuit; t is s Is the switching period of the converter; t is ff For the slave main switch tube M 1 Down to a threshold voltage V th Time of channel turn-off to M 2 Down to a threshold voltage V th The moment when the back channel is turned off; t is t f The off time.
From the voltage formula of the inductor, one can obtain:
and the maximum value of the inductive current I in the circuit LMAX Can be expressed as:
the pre-dead zone T can thus be obtained ahead The final expression of (1):
s103, the relevant parameter information required to be obtained in the present invention can be obtained from the corresponding data manual provided by the manufacturers of the SiC MOSFET and the driver thereof. Which comprises the following steps: drive resistor R when using SiC MOSFET g,all (ii) a Input capacitance C iss (ii) a Threshold voltage V for channel turn-on of SiC MOSFET th Minimum value of driving voltage V GSmin And maximum value of driving voltage V GSmax (ii) a Amount of charge Q of SiC MOSFET at present output voltage M1 (V o ) And the output charge Q of the anti-parallel diode diode (V o )；
S104, utilizing the obtained parameter information of the SiC MOSFET device and the drive circuit thereof to control the main switch tube M 1 Dead time after shutdown is set to T after 。
When the main switch tube M 1 After the switch-off, the output capacitor of the SiC MOSFET begins to discharge to generate current, and the current in the circuit can be changed from M 1 Gradually switching to an anti-parallel diode for freewheeling, which can result in capacitive losses and additional diode freewheeling losses if the dead band setting is not rational. In the setting of a main switch tube M 1 The dead time after the shutdown needs to fully consider the two losses, so the dead time of the part consists of two parts: firstly, the freewheeling time of an anti-parallel diode; the second is the discharge time taking into account the capacitive losses of the SiC MOSFET.
Main switch tube M 1 A partial driving timing chart of the dead zone after the shutdown is shown in fig. 5. In order to reduce the freewheeling loss of the anti-parallel diode, the freewheeling time is reduced as much as possible, but in order to prevent the device from being damaged due to the bridge arm through phenomenon, the dead time cannot be set too small. The ideal dead time should be set as: active tube M 1 Start to turn off, its drive voltage V GS1 From V GSmax Down to a threshold voltage V th Now inactive tube M 2 Drive voltage V GS2 From V GSmin Starts to rise while reaching the threshold voltage V th . Therefore, the necessary dead time t can be set nec Is arranged as an active pipe M 1 Off time t of f And a non-active tube M 2 On-time t of r The difference of (a).
When the main switch tube M 1 When turned off, the time t of turning off f From the first order model of the gate loop:
similarly, the inactive tube M 2 Rise time at turn-on t r It can also be derived from a first order model of the gate loop:
so the necessary time t of the section nec Comprises the following steps:
at the active pipe M 1 After the shutdown, the output capacitor of the SiC MOSFET begins to discharge to the load side. If the dead time is set small, the loss of this part of the energy is not taken into consideration, which causes the part of the energy to be consumed in the channel of the SiC MOSFET, causing additional loss. If the dead time is set too large, the current will freewheel in the anti-parallel diode for a long time, also causing extra energy loss.
Because the circuit has two SiC MOSFETs with the same type, the discharge time t of the output capacitor dc Comprises the following steps:
it should be noted that the antiparallel diode also has a loss due to the output capacitance, and in consideration of this loss, t is dc Further change to:
in discontinuous mode, the maximum value of the inductor current in the circuit can be expressed as:
thus t dc The expression of (a) is:
two parts, a main switchDead time T after tube shut-off after Should be set to t dc And t nec And (3) the sum:
the advantages of the dead zone setting method of the present invention are analyzed by taking fig. 6 and 7 as examples. Fig. 6 is a waveform of an inductor current when the inductor current is interrupted in a simulation environment and a conventional dead zone setting method is used, and the inductor current alternates between positive and negative due to the existence of a synchronous working mode, thereby causing energy loss. FIG. 7 is a graph showing the waveform of the inductor current using the dead zone setting method of the present invention under the same operating condition, and it can be seen from FIG. 7 that when the inductor current decreases to 0, the inactive transistor M 2 And turning off to keep the inductor current at 0 and avoid the reverse flow of energy.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (2)
1. The method for setting the intermittent working dead zone of the SiC MOSFET Boost converter in the synchronous working mode is characterized by comprising the following steps of: the method comprises the following steps:
s1, acquiring actual duty ratio D and input side voltage V of the converter i And a voltage V at the output side o ；
S2, main switch tube M of converter 1 The dead time before switching on is set to T ahead ：
Wherein, T s Is the switching period of the converter;
s3, acquiring relevant parameter information of the SiC MOSFET device and the drive circuit thereof, wherein the relevant parameter information comprises the drive resistance R of the SiC MOSFET g,all Input electricityContainer C iss (ii) a Threshold voltage V for channel turn-on of SiC MOSFET th Minimum value of driving voltage V GSmin And maximum value of driving voltage V GSmax (ii) a Amount of charge Q of SiC MOSFET at present output voltage M1 (V o ) And output charge Q of anti-parallel diode diode (V o )；
S4, master switch tube M 1 The dead time after the shutdown is set to T after ：
And L is an inductance value of the input side of the Boost converter.
2. The method for setting the intermittent operation dead zone of the SiC MOSFET Boost converter in the synchronous operation mode according to claim 1, wherein: if the calculation of the value of the dead time requires n switching cycles, the method is carried out with n cycles as a cycle time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210649514.4A CN114915158A (en) | 2022-06-09 | 2022-06-09 | Method for setting intermittent working dead zone of SiC MOSFET (Metal oxide semiconductor field Effect transistor) Boost converter in synchronous working mode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210649514.4A CN114915158A (en) | 2022-06-09 | 2022-06-09 | Method for setting intermittent working dead zone of SiC MOSFET (Metal oxide semiconductor field Effect transistor) Boost converter in synchronous working mode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114915158A true CN114915158A (en) | 2022-08-16 |
Family
ID=82771550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210649514.4A Pending CN114915158A (en) | 2022-06-09 | 2022-06-09 | Method for setting intermittent working dead zone of SiC MOSFET (Metal oxide semiconductor field Effect transistor) Boost converter in synchronous working mode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114915158A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180026538A1 (en) * | 2016-07-19 | 2018-01-25 | Dialog Semiconductor (Uk) Limited | Nulling Reverse Recovery Charge in DC/DC Power Converters |
| CN111313677A (en) * | 2020-04-01 | 2020-06-19 | 南通大学 | Method for setting dead zone of synchronous working type SiC MOSFET Boost DC-DC converter |
| CN112803766A (en) * | 2020-12-09 | 2021-05-14 | 天津大学 | Dead zone optimization configuration method for gallium nitride power switch |
-
2022
- 2022-06-09 CN CN202210649514.4A patent/CN114915158A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180026538A1 (en) * | 2016-07-19 | 2018-01-25 | Dialog Semiconductor (Uk) Limited | Nulling Reverse Recovery Charge in DC/DC Power Converters |
| CN111313677A (en) * | 2020-04-01 | 2020-06-19 | 南通大学 | Method for setting dead zone of synchronous working type SiC MOSFET Boost DC-DC converter |
| CN112803766A (en) * | 2020-12-09 | 2021-05-14 | 天津大学 | Dead zone optimization configuration method for gallium nitride power switch |
Non-Patent Citations (1)
| Title |
|---|
| ZHANG, LEI等: "Self-Adaption Dead-Time Setting for the SiC MOSFET Boost Circuit in the Synchronous Working Mode", 《IEEE ACESS》 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1742340A1 (en) | Dc/dc converter | |
| WO2015079762A1 (en) | Rectifier | |
| JP2005501497A (en) | Method and circuit for reducing loss in a DC-DC converter | |
| CN111064364B (en) | Full-soft switching circuit of synchronous rectification Buck converter and control method thereof | |
| JP7251351B2 (en) | Gate drive and power converter | |
| JP6702209B2 (en) | Power converter | |
| US20090001410A1 (en) | Driver Circuit and Electrical Power Conversion Device | |
| CN112583252A (en) | High-power-density high-gain converter and control method thereof | |
| US10483853B2 (en) | DC-DC converter | |
| CN111682769B (en) | Self-adaptive synchronous rectification digital control method of active clamp forward converter | |
| WO2021036392A1 (en) | Switch converter and control method therefor | |
| CN110391736A (en) | The control circuit of BUCK converter | |
| JP6655837B2 (en) | Bidirectional converter, controller, and semiconductor device | |
| CN109980931B (en) | Method for eliminating dead zone of non-reverse Buck-Boost converter operation | |
| CN110994982A (en) | Soft switching mode BUCK converter and control method thereof | |
| US10305367B2 (en) | Power conversion circuit | |
| CN110086342A (en) | A kind of switch converters and its control method | |
| WO2018218639A1 (en) | Power switch driving circuit with built-in power supply capacitor | |
| CN104052279A (en) | Self-excited Sepic converter based on MOSFET | |
| CN110994996B (en) | Asynchronous step-down DCDC chip and bootstrap circuit based on asynchronous step-down DCDC chip | |
| CN108322053A (en) | A kind of Buck conversion circuit | |
| CN110957908B (en) | Bidirectional DC-DC soft switching circuit and wide-range soft switching control method | |
| CN116827095A (en) | SiC MOSFET driving circuit and driving method | |
| JP2004312913A (en) | Step-down dc-dc converter | |
| CN209170226U (en) | A kind of novel expansible Zeta DC-DC converter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20220816 |