CN114911092B - Display panel, manufacturing method thereof and display device - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000010410 layer Substances 0.000 claims abstract description 395
- 239000011229 interlayer Substances 0.000 claims abstract description 92
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 239000003086 colorant Substances 0.000 claims abstract description 31
- 230000005684 electric field Effects 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 59
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- 238000002161 passivation Methods 0.000 claims description 16
- 239000010409 thin film Substances 0.000 claims description 14
- 239000004973 liquid crystal related substance Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 238000004020 luminiscence type Methods 0.000 claims description 4
- 238000002834 transmittance Methods 0.000 abstract description 42
- 230000000694 effects Effects 0.000 abstract description 10
- 239000000463 material Substances 0.000 description 11
- 239000003989 dielectric material Substances 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 6
- -1 silicon nitride compound Chemical class 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
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- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The application provides a display panel, a manufacturing method thereof and a display device; the display panel comprises a plurality of sub-pixel units arranged in an array, wherein each sub-pixel unit comprises a substrate, an interlayer dielectric layer arranged on the substrate, a first conductive layer arranged on the interlayer dielectric layer and a second conductive layer arranged on the first conductive layer in an insulating manner, the first conductive layer and the second conductive layer form an electric field for controlling the sub-pixel units to emit light, and the thicknesses of the interlayer dielectric layers of the sub-pixel units with different colors are different in the light emitting direction of the display panel; according to the application, the interlayer dielectric layers and the first conductive layers of the sub-pixel units with different colors are set to be different in thickness, so that the transmittance of light emitted by the sub-pixel units with at least one color to the interlayer dielectric layers and the first conductive layers with certain thickness can reach a higher level, the overall light efficiency is further improved, and the display effect is improved.
Description
Technical Field
The application relates to the field of display technology, in particular to a display panel, a manufacturing method thereof and a display device.
Background
The light efficiency of a display panel refers to the ratio of the light intensity of a backlight source before and after passing through the panel, and has an important influence on the performance of the display panel, such as display brightness, power consumption, and the like. The light efficiency of the liquid crystal display panel is usually only 3% to 10%, mainly because the transparent interlayer dielectric layer on the array substrate has a great influence on the light transmittance except for the metal wiring, and the interlayer dielectric layers with different film thicknesses have different light transmittance for different colors, namely, the red light transmittance is the highest at a certain film thickness, and the blue light transmittance or the green light transmittance is the highest at another film thickness.
In the current liquid crystal display panel, the interlayer dielectric layers have no thickness difference in the sub-pixel areas with different colors, so that the light transmittance in the sub-pixel areas with different colors is difficult to reach a higher level at the same time, and the problem of low overall light efficiency exists.
Disclosure of Invention
The application provides a display panel, a manufacturing method thereof and a display device, which are used for solving the technical problem that the overall light efficiency of the current display panel is not high because the light transmittance in sub-pixel areas with different colors is difficult to reach a higher level.
In order to solve the technical problems, the technical scheme provided by the application is as follows:
the application provides a display panel, which comprises a plurality of sub-pixel units arranged in an array; the sub-pixel unit includes:
a substrate;
an interlayer dielectric layer arranged on the substrate;
the first conductive layer is arranged on the interlayer dielectric layer; and
the second conductive layer is arranged on the first conductive layer in an insulating manner, and the first conductive layer and the second conductive layer form an electric field for controlling the luminescence of the sub-pixel unit;
in the light emitting direction of the display panel, the thicknesses of the interlayer dielectric layers of the sub-pixel units with different colors are different.
In the display panel of the present application, the sub-pixel unit at least includes a red sub-pixel unit, a green sub-pixel unit, and a blue sub-pixel unit;
in the light emitting direction of the display panel, the thicknesses of the interlayer dielectric layers of the red sub-pixel unit, the green sub-pixel unit and the blue sub-pixel unit are gradually increased.
In the display panel of the present application, in the light emitting direction of the display panel, the thickness of the interlayer dielectric layer of the red sub-pixel unit is 0 a, the thickness of the interlayer dielectric layer of the green sub-pixel unit is 2400 a, and the thickness of the interlayer dielectric layer of the blue sub-pixel unit is 3800 a.
In the display panel of the present application, the thicknesses of the first conductive layers of the red, green and blue sub-pixel units are gradually reduced in the light emitting direction of the display panel.
In the display panel of the present application, in a light emitting direction of the display panel, a thickness of the first conductive layer of the red sub-pixel unit is 800 a, a thickness of the first conductive layer of the green sub-pixel unit is 450 a, and a thickness of the first conductive layer of the blue sub-pixel unit is 350 a.
In the display panel of the present application, the sub-pixel unit further includes a thin film transistor disposed between the substrate and the first conductive layer, the first conductive layer is electrically connected to the common voltage terminal, and the second conductive layer is electrically connected to a source electrode or a drain electrode of the thin film transistor.
In the display panel of the present application, the sub-pixel unit further includes a passivation layer disposed between the first conductive layer and the second conductive layer;
wherein the passivation layer covers the surface of the first conductive layer, and the orthographic projection of the first conductive layer on the passivation layer is positioned in the passivation layer.
The application also provides a manufacturing method of the display panel, which comprises the following steps:
providing a substrate;
forming interlayer dielectric layers of a plurality of sub-pixel units on the substrate, and enabling the thicknesses of the interlayer dielectric layers of the sub-pixel units with different colors to be different;
forming a first conductive layer on the interlayer dielectric layer;
and forming a second conductive layer insulated from the first conductive layer on the first conductive layer, and forming an electric field between the first conductive layer and the second conductive layer for controlling the luminescence of the sub-pixel unit.
In the method for manufacturing a display panel of the present application, the step of forming the first conductive layer on the interlayer dielectric layer includes:
forming a first conductive film layer on the interlayer dielectric layer;
forming a patterned first sacrificial layer on the first conductive film layer;
forming a second conductive film layer on the first sacrificial layer;
forming a patterned second sacrificial layer on the second conductive film layer, and enabling orthographic projection of the second sacrificial layer and the first sacrificial layer on the substrate not to coincide;
forming a third conductive film layer over the second sacrificial layer;
forming a photoresist on the third conductive film layer, and enabling orthographic projection of the photoresist on the substrate to be not overlapped with orthographic projections of the first sacrificial layer and the second sacrificial layer on the substrate;
and removing the photoresist, the first sacrificial layer and the second sacrificial layer to form the first conductive layers of the three sub-pixel units with different colors.
The application also provides a display device, which comprises a backlight module and the display panel;
the display panel comprises an array substrate, a color film substrate and a liquid crystal layer arranged between the array substrate and the color film substrate, and the backlight module is arranged on one side, far away from the array substrate, of the color film substrate.
Advantageous effects
According to the application, the interlayer dielectric layers of the sub-pixel units with different colors are set to be different in thickness, so that the transmittance of light emitted by at least one color sub-pixel unit to the interlayer dielectric layer with a certain thickness can reach the optimal level, and the transmittance of light emitted by other color sub-pixel units to the interlayer dielectric layer with other film thicknesses can reach the higher or highest level, thereby integrally improving the transmittance of light emitted by all sub-pixel units in the display panel to the interlayer dielectric layer, further improving the overall light efficiency and improving the display effect.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of the whole structure of a display panel according to the present application;
FIG. 2 is a flow chart of a method for manufacturing a display panel according to the present application;
FIG. 3 is a schematic diagram of a process for fabricating an interlayer dielectric layer according to the present application;
fig. 4 is a schematic flow chart of the manufacturing process of the first conductive layer according to the present application.
Reference numerals illustrate:
the pixel structure comprises a sub-pixel unit 101, an array substrate 102, a liquid crystal layer 103, a color film substrate 104, a substrate 100, a shading layer 200, a buffer layer 300, a thin film transistor 400, an active layer 410, a gate insulating layer 420, a gate layer 430, a source drain layer 440, a first dielectric layer 500, an interlayer dielectric layer 600, a planarization layer 700, a first conductive layer 800, a first conductive film layer 810, a first sacrificial layer 820, a second conductive film layer 830, a second sacrificial layer 840, a third conductive film layer 850, a photoresist 860, a second conductive layer 900 and a passivation layer 910.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application. Furthermore, it should be understood that the detailed description is presented herein for purposes of illustration and description only, and is not intended to limit the application. In the present application, unless otherwise indicated, terms of orientation such as "upper" and "lower" are used to generally refer to the upper and lower positions of the device in actual use or operation, and specifically the orientation of the drawing figures; while "inner" and "outer" are for the outline of the device.
The light efficiency of a display panel refers to the ratio of the light intensity of a backlight source before and after passing through the panel, and has an important influence on the performance of the display panel, such as display brightness, power consumption, and the like. The light efficiency of the lcd panel is usually only 3% to 10%, that is, more than 90% of the light is unavailable, and it is mainly because, besides the metal traces, the transparent interlayer dielectric layer on the array substrate has a great influence on the light transmittance, and the interlayer dielectric layers with different film thicknesses have different light transmittance for different colors, that is, the red light transmittance is the highest at a certain film thickness, and the blue light transmittance is the highest or the green light transmittance is the highest at another film thickness.
In the current liquid crystal display panel, the interlayer dielectric layers have no thickness difference in the sub-pixel areas with different colors, so that the light transmittance in the sub-pixel areas with different colors is difficult to reach a higher level at the same time, and the problem of low overall light efficiency exists. The application provides the following scheme based on the technical problems.
Referring to fig. 1, the present application provides a display panel, which includes a plurality of sub-pixel units 101 arranged in an array, wherein the sub-pixel units 101 include a substrate 100, an interlayer dielectric layer 600 disposed on the substrate 100, a first conductive layer 800 disposed on the interlayer dielectric layer 600, and a second conductive layer 900 disposed on the first conductive layer 800 in an insulating manner. The first conductive layer 800 and the second conductive layer 900 form an electric field that controls the emission of light from the sub-pixel unit 101. In the light emitting direction of the display panel, the thicknesses of the interlayer dielectric layers 600 of the sub-pixel units 101 of different colors are different.
According to the application, the interlayer dielectric layers 600 of the sub-pixel units 101 with different colors are set to be different in thickness, so that the transmittance of light emitted by at least one color sub-pixel unit 101 to the interlayer dielectric layer 600 with a certain thickness can reach the optimal level, and the transmittance of light emitted by other color sub-pixel units 101 to the interlayer dielectric layer 600 with other film thicknesses can reach the higher or highest level, thereby integrally improving the transmittance of light emitted by all sub-pixel units 101 in the display panel to the interlayer dielectric layer 600, further improving the overall light efficiency and improving the display effect.
The technical scheme of the present application will now be described with reference to specific embodiments. The following description of the embodiments is not intended to limit the preferred embodiments.
Referring to fig. 1, in the display panel of the present application, the display panel may be a liquid crystal display panel, and the liquid crystal display panel may include an array substrate 102, a color film substrate 104, and a liquid crystal layer 103 disposed between the array substrate 102 and the color film substrate 104. The sub-pixel unit 101 may be understood as a sum of the array substrate 102, the liquid crystal layer 103 and the color filter substrate 104 in one unit.
In this embodiment, the sub-pixel unit 101 may include at least a red sub-pixel unit, a green sub-pixel unit, and a blue sub-pixel unit. In other embodiments, the sub-pixel unit 101 may also include a red sub-pixel unit, a green sub-pixel unit, a blue sub-pixel unit, and a white sub-pixel unit 101. The present embodiment is described by taking the example that the sub-pixel unit 101 includes a red sub-pixel unit, a green sub-pixel unit, and a blue sub-pixel unit.
In this embodiment, the sub-pixel unit 101 may further include a light shielding layer 200 disposed on the substrate 100, a buffer layer 300 disposed on the light shielding layer 200, a gate insulating layer 420 disposed on the buffer layer 300, and a first dielectric layer 500 disposed on the gate insulating layer 420, and the interlayer dielectric layer 600 may be disposed on a side of the first dielectric layer 500 away from the substrate 100.
In this embodiment, the substrate 100 in the sub-pixel unit 101 may be a transparent glass substrate or a transparent polyimide substrate.
In this embodiment, the light shielding layer 200 may be an opaque metal layer, and the material of the metal layer may be Cu, al, mo, or the like.
In this embodiment, the materials for forming the buffer layer 300, the gate insulating layer 420, the first dielectric layer 500, and the interlayer dielectric layer 600 may include at least one of silicon nitride compound (SiNx) and silicon oxide compound (SiOx). It should be noted that, since the influence of the silicon oxynitride (SiNx) and the silicon oxide (SiOx) on the transmittance of light is relatively large, in this embodiment, only the thickness of the interlayer dielectric layer 600 of the sub-pixel units 101 of different colors is described as an example, and in other embodiments, the buffer layer 300 or/and the first dielectric layer 500 or/and the gate insulating layer 420 of the sub-pixel units 101 of different colors may be set to have different thicknesses, so as to achieve the technical effect similar to or the technical effect similar to that of this embodiment, which is not described herein.
In this embodiment, the first conductive layer 800 and the second conductive layer 900 may be transparent oxide conductive film materials such as Indium Tin Oxide (ITO) and the like. It should be noted that, when the display panel displays a picture normally, different voltages are applied to the first conductive layer 800 and the second conductive layer 900 to form an electric field for controlling the sub-pixel unit 101 to perform normal light emitting display.
Referring to fig. 1, in the display panel of the present application, in the light emitting direction of the display panel, the thicknesses of the interlayer dielectric layers 600 of the red sub-pixel unit, the green sub-pixel unit, and the blue sub-pixel unit may be gradually increased. In this embodiment, the thickness difference of the interlayer dielectric layer 600 may only correspond to the light-transmitting area or the opening area in the sub-pixel unit 101, and the thicknesses of the interlayer dielectric layers 600 of the sub-pixel units 101 with different colors may be the same in the non-light-transmitting area, so that other circuit structures are formed on the interlayer dielectric layers 600 with the same surface height in the non-light-transmitting area.
In this embodiment, the thickness of the interlayer dielectric layer 600 in the red sub-pixel cell opening region may be 0 a, 50 a, 100 a, 200 a, etc., and the thickness of the interlayer dielectric layer 600 in the green sub-pixel cell opening region may be 2200 a, 2400 a, 2600 a, etc. The thickness of the interlayer dielectric layer 600 in the blue sub-pixel cell opening region may be 3700 a, 3800 a, 3900 a, or the like.
In this embodiment, preferably, in the light emitting direction of the display panel, the thickness of the first dielectric layer 500 of the red sub-pixel unit may be 0 a, the thickness of the interlayer dielectric layer 600 of the green sub-pixel unit may be 2400 a, and the thickness of the interlayer dielectric layer 600 of the blue sub-pixel unit may be 3800 a.
In other words, the first dielectric layer 500 may not be disposed in the opening area of the red sub-pixel unit, so that the transmittance of the red light to the interlayer dielectric layer 600 may reach a maximum value, and at this time, the transmittance of the red light to the interlayer dielectric layer 600 may reach more than 90%. In the opening area of the green sub-pixel unit, the interlayer dielectric layer 600 with the thickness of 2400 a can make the transmittance of green light to the interlayer dielectric layer 600 reach the maximum value, and at this time, the transmittance of green light to the interlayer dielectric layer 600 can be close to 90%. In the opening region of the blue sub-pixel unit, the interlayer dielectric layer 600 with the thickness of 3800 a may make the transmittance of blue light reach a maximum, and at this time, the transmittance of blue light to the interlayer dielectric layer 600 may reach more than 80%.
It should be noted that, since the light transmittance of the red light, the green light and the blue light to the interlayer dielectric layer 600 periodically changes along with the thickness of the interlayer dielectric layer 600, the present embodiment only provides the above several preferable schemes, and under these schemes, the light transmittance of the red light, the green light and the blue light can reach larger values respectively, so as to achieve a better display effect. The thicknesses of the interlayer dielectric layer 600 in the opening areas of the red sub-pixel unit, the green sub-pixel unit and the blue sub-pixel unit may not be limited to the above values, and the embodiments are not repeated here.
Referring to fig. 1, in the display panel of the present application, since the transparent conductive film material has a large effect on the transmittance of light, in order to make the transmittance of light of different colors to the transparent conductive film material reach the maximum value, the thicknesses of the first conductive layers 800 of the red sub-pixel unit, the green sub-pixel unit and the blue sub-pixel unit may be gradually reduced in the light emitting direction of the display panel.
In this embodiment, the first conductive layers 800 in the two adjacent sub-pixel units 101 may be separately disposed, and correspondingly, the second conductive layers 900 in the two adjacent sub-pixel units 101 may also be separately disposed, so as to realize independent control of different sub-pixel units 101.
In this embodiment, the thickness of the first conductive layer 800 of the red sub-pixel unit may be 700 a, 800 a, 900 a, etc., and the thickness of the interlayer dielectric layer 600 in the opening area of the green sub-pixel unit may be 400 a, 450 a, 500 a, etc. The thickness of the interlayer dielectric layer 600 in the opening area of the blue sub-pixel unit may be 300 a, 350 a, 400 a, etc.
In this embodiment, preferably, in the light emitting direction of the display panel, the thickness of the first conductive layer 800 of the red sub-pixel unit may be 800 a, the thickness of the first conductive layer 800 of the green sub-pixel unit may be 450 a, and the thickness of the first conductive layer 800 of the blue sub-pixel unit may be 350 a.
In this embodiment, in the red sub-pixel unit, the first conductive layer 800 with the thickness of 800 a may make the transmittance of red light to the first conductive layer 800 reach the maximum value, and at this time, the transmittance of red light to the first conductive layer 800 may reach more than 80%. In the green sub-pixel unit, the first conductive layer 800 with the thickness of 450 a can make the transmittance of green light to the first conductive layer 800 reach the maximum value, and at this time, the transmittance of green light to the first conductive layer 800 can reach more than 90%. In the opening region of the blue sub-pixel unit, the first conductive layer 800 with the thickness of 350 a may make the transmittance of blue light reach a maximum, and at this time, the transmittance of blue light to the first conductive layer 800 may reach more than 85%.
It should be noted that, since the light transmittance of the red light, the green light and the blue light to the first conductive layer 800 periodically changes along with the thickness of the first conductive layer 800, the present embodiment only provides the above several preferable schemes, and under these schemes, the light transmittance of the red light, the green light and the blue light can reach larger values respectively, so as to achieve a better display effect. The thicknesses of the first conductive layers 800 of the red sub-pixel unit, the green sub-pixel unit, and the blue sub-pixel unit may not be limited to the above values, and the embodiments are not described herein.
Referring to fig. 1, in the display panel of the present application, the sub-pixel unit 101 may further include a planarization layer 700 disposed on the interlayer dielectric layer 600 and a thin film transistor 400 disposed between the planarization layer 700 and the buffer layer 300.
In this embodiment, the thin film transistor 400 may include an active layer 410 disposed on the buffer layer 300, a gate layer 430 disposed over the active layer 410, and a source drain layer 440 disposed over the gate layer 430. In this embodiment, the active layer 410 may be disposed in the same layer as the gate insulating layer 420 and the gate insulating layer 420 entirely covers the active layer 410. The gate layer 430 may be disposed on the gate insulating layer 420 and the gate layer 430 is disposed in the same layer as the interlayer dielectric layer 600, and the interlayer dielectric layer 600 entirely covers the gate layer 430. The source/drain electrode layer 440 may be disposed on the interlayer dielectric layer 600, where the source/drain electrode layer 440 and the planarization layer 700 are disposed on the same layer, and the planarization layer 700 completely covers the source/drain electrode layer 440.
In this embodiment, the source/drain layer 440 of the thin film transistor 400 may overlap the active layer 410 through a via penetrating the interlayer dielectric layer 600 to achieve electrical connection, and the gate layer 430 of the thin film transistor 400 may be in electrical communication with a scan signal.
In this embodiment, the first conductive layer 800 may be disposed on the planarization layer 700, the sub-pixel unit 101 may further include a passivation layer 910 disposed on the first conductive layer 800, the second conductive layer 900 may be disposed on the passivation layer 910, and the first conductive layer 800 and the second conductive layer 900 may be insulated by the passivation layer 910. The passivation layer 910 may cover the surface of the first conductive layer 800, and the orthographic projection of the first conductive layer 800 on the passivation layer 910 is located in the passivation layer 910, so that the passivation layer 910 in each sub-pixel unit 101 may completely cover the first conductive layer 800, thereby avoiding the exposure of the edge of the first conductive layer 800 in each sub-pixel unit 101, reducing the occurrence of electron migration between the first conductive layer 800 and other conductive film layers due to the exposure, and being beneficial to improving the overall circuit stability.
In this embodiment, the first conductive layer 800 may be used as a common electrode layer and electrically connected to a common voltage terminal, and the second conductive layer 900 may be used as a pixel electrode layer and electrically connected to the source/drain layer 440 of the thin film transistor 400 through a via hole. Wherein one of the source or the drain of the thin film transistor 400 may be in electrical communication with a data signal, and the other of the source or the drain of the thin film transistor 400 may be electrically connected to the second conductive layer 900 through a via. It should be noted that, in order to ensure the pixel aperture ratio of the sub-pixel unit 101, the thin film transistor 400 and the via hole for electrically connecting the thin film transistor 400 and the second conductive layer 900 may be disposed in the non-light-transmitting region of the sub-pixel unit 101.
According to the embodiment of the application, the interlayer dielectric layers 600 and the first conductive layers 800 of the sub-pixel units 101 with different colors are set to be different in thickness, so that the transmittance of light emitted by the sub-pixel units 101 with different colors to the interlayer dielectric layers 600 and the first conductive layers 800 with certain thickness can reach the optimal level at the same time, the transmittance of light emitted by all the sub-pixel units 101 in the display panel to the interlayer dielectric layers 600 and the first conductive layers 800 is improved on the whole, the overall light efficiency is improved, and the display effect is improved.
The embodiment of the application also provides a display device, which may include a backlight module and the display panel described in the above embodiment, where the backlight module is disposed on a side of the color film substrate 104 of the display panel away from the array substrate 102. White light emitted by the backlight module is changed into red light, green light and blue light after passing through the color resistance layer on the color film substrate 104, and the red light, the green light and the blue light respectively pass through the corresponding liquid crystal layer 103 and the array substrate 102 and then are emitted from one side of the array substrate 102 far away from the color film substrate 104, so that liquid crystal display is realized.
Referring to fig. 2, an embodiment of the present application further provides a method for manufacturing a display panel, which is used for manufacturing the display panel in the above embodiment, where the method for manufacturing a display panel may include:
s100, providing a substrate 100.
S200, forming interlayer dielectric layers 600 of the plurality of sub-pixel units 101 on the substrate 100, and making the thicknesses of the interlayer dielectric layers 600 of the sub-pixel units 101 of different colors different.
S300, a first conductive layer 800 is formed on the interlayer dielectric layer 600.
S400, forming a second conductive layer 900 insulated from the first conductive layer 800 on the first conductive layer 800, and forming an electric field between the first conductive layer 800 and the second conductive layer 900 to control the light emission of the sub-pixel unit 101.
The application can make the display panel form the interlayer dielectric layers 600 with different thicknesses in the sub-pixel units 101 with different colors by the steps, thereby making the transmittance of the light with different colors after passing through the interlayer dielectric layers 600 reach the maximum value and effectively improving the light efficiency of the display panel.
As shown in fig. 3, in the method for manufacturing a display panel of the present application, the step S200 may include:
s210, a light shielding layer 200 and a buffer layer 300 are sequentially formed on the substrate 100.
S220, an active layer 410 and a gate insulating layer 420 are sequentially formed on the buffer layer 300.
S230, sequentially forming a gate layer 430 and a first dielectric layer 500 on the gate insulating layer 420, and forming a dielectric material layer with uniform thickness on the first dielectric layer 500.
S240, exposing the dielectric material layer by using a halftone screen dot photomask, wherein no light resistance 860 is corresponding to the opening area of the sub-pixel unit 101 of the first color, the opening area of the sub-pixel unit 101 of the second color corresponds to the thinner light resistance 860, and the opening area of the sub-pixel unit 101 of the third color corresponds to the thicker light resistance 860.
In this embodiment, the first color sub-pixel unit 101 may be a red sub-pixel unit, the second color sub-pixel unit 101 may be a green sub-pixel unit, and the third color sub-pixel unit 101 may be a blue sub-pixel unit.
S250, performing a first dry etching on the exposed dielectric material layer to thin the interlayer dielectric layer 600 in the opening area of the sub-pixel units 101 with different colors, and forming a first via hole penetrating through the dielectric material layer.
In this embodiment, since the area of the first via hole is smaller than that of the opening area of the red sub-pixel unit, the etching depth of the first via hole is larger, the etching depth of the opening area of the red sub-pixel unit is smaller, and other non-transparent positions of the red sub-pixel unit are not etched due to the protection of the photoresist 860.
And S260, continuing to perform second dry etching on the exposed dielectric material layer to remove all the dielectric material layer in the opening area of the red sub-pixel unit, remove part of the dielectric material layer in the opening area of the green sub-pixel unit, and open the first via hole to the active layer 410.
And S270, removing the residual photoresist 860 on the dielectric material layer, namely forming the interlayer dielectric layers 600 with different film thicknesses in the sub-pixel units 101 with different colors.
Through the steps, the interlayer dielectric layers 600 with different film thicknesses can be efficiently and rapidly formed, the film thickness and the position of the interlayer dielectric layers 600 are convenient to control, and the product yield of the display panel can be improved.
Referring to fig. 4, in the method for manufacturing a display panel of the present application, the step S300 may include:
s310, forming a planarization layer 700 on the interlayer dielectric layer 600, and forming a first conductive film layer 810 on the planarization layer 700.
In this embodiment, the planarization layer 700 may be a silicon nitride compound (SiNx) material layer.
In this embodiment, the first conductive film 810 may be an Indium Tin Oxide (ITO) material layer.
S320, forming a patterned first sacrificial layer 820 on the first conductive film layer.
In this embodiment, the first sacrificial layer 820 may be a silicon nitride compound (SiNx) material layer.
In this embodiment, the patterning of the first sacrificial layer 820 may include exposure, development, dry etching, and the like, and the first sacrificial layer 820 may correspond to the opening region of the blue sub-pixel unit.
And S330, forming a second conductive film layer on the first sacrificial layer 820.
In this embodiment, the second conductive film layer 830 may be an Indium Tin Oxide (ITO) material layer.
In this embodiment, the second conductive film layer 830 may cover the first sacrificial layer 820 and the surface of the first conductive film layer 810 other than the first sacrificial layer 820.
S340, forming a patterned second sacrificial layer 840 on the second conductive film layer 830, and making the second sacrificial layer 840 not coincide with the orthographic projection of the first sacrificial layer 820 on the substrate 100.
In this embodiment, the second sacrificial layer 840 may be a silicon nitride compound (SiNx) material layer.
In this embodiment, the patterning of the second sacrificial layer 840 may include exposing, developing, dry etching, and the like, and the second sacrificial layer 840 may correspond to the opening region of the blue sub-pixel unit.
S350, a third conductive film layer 850 is formed over the second sacrificial layer 840.
In this embodiment, the third conductive film layer 850 may be an Indium Tin Oxide (ITO) material layer.
In this embodiment, the third conductive film layer 850 may cover the second sacrificial layer 840 and the surface of the second conductive film layer 830 other than the second sacrificial layer 840.
S360, forming a photoresist 860 on the third conductive film layer 850, and making the orthographic projection of the photoresist 860 on the substrate 100 not coincide with the orthographic projections of the first sacrificial layer 820 and the second sacrificial layer 840 on the substrate 100.
In this embodiment, the photoresist 860 may be formed on the third conductive film layer 850 by exposure and development, and the photoresist 860 may correspond to the opening region of the red subpixel unit.
S370, removing the photoresist 860, the first sacrificial layer 820 and the second sacrificial layer 840 to form the first conductive layers 800 of the three different color sub-pixel units 101.
In this embodiment, before removing the photoresist 860, the first sacrificial layer 820 and the second sacrificial layer 840, the first conductive film layer 810, the second conductive film layer 830 and the third conductive film layer 850, which are not protected by the first sacrificial layer 820, the second sacrificial layer 840 and the photoresist 860 in the sub-pixel unit 101, may be removed by wet etching to form three separate units.
In this embodiment, after forming three separate units, the first sacrificial layer 820 and the second sacrificial layer 840 on the surfaces of the three units may be removed by dry etching, and the photoresist 860 is stripped off by the photoresist 860, so as to finally form the interlayer dielectric layers 600 with different thicknesses in the sub-pixel units 101 with different colors.
It should be noted that, in this embodiment, the first conductive layers 800 with different thicknesses in the sub-pixel units 101 with different colors may be formed by using a similar dry etching method to the steps S230 to S360 by using photomask exposure and then performing different depths, which is not described herein.
The display panel, the display device and the manufacturing method thereof provided by the embodiment of the application are described in detail, and specific examples are applied to the description of the principle and the implementation mode of the application, and the description of the above examples is only used for helping to understand the method and the core idea of the application; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, the present description should not be construed as limiting the present application.
Claims (9)
1. A display panel, comprising a plurality of sub-pixel units arranged in an array; the sub-pixel unit includes:
a substrate;
an interlayer dielectric layer arranged on the substrate;
the flat layer is arranged on the interlayer dielectric layer;
a first conductive layer disposed on the planarization layer; and
the second conductive layer is arranged on the first conductive layer in an insulating manner, and the first conductive layer and the second conductive layer form an electric field for controlling the luminescence of the sub-pixel unit;
the sub-pixel units at least comprise a red sub-pixel unit, a green sub-pixel unit and a blue sub-pixel unit;
in the light emitting direction of the display panel, the thicknesses of the interlayer dielectric layers of the sub-pixel units with different colors are different, and the thicknesses of the interlayer dielectric layers of the red sub-pixel unit, the green sub-pixel unit and the blue sub-pixel unit are gradually increased.
2. The display panel of claim 1, wherein in a light-emitting direction of the display panel, a thickness of the interlayer dielectric layer of the red sub-pixel unit is 0 a, a thickness of the interlayer dielectric layer of the green sub-pixel unit is 2400 a, and a thickness of the interlayer dielectric layer of the blue sub-pixel unit is 3800 a.
3. The display panel according to claim 1, wherein the thicknesses of the first conductive layers of the red, green, and blue sub-pixel units gradually decrease in a light emitting direction of the display panel.
4. The display panel of claim 3, wherein in a light-emitting direction of the display panel, a thickness of the first conductive layer of the red sub-pixel unit is 800 a, a thickness of the first conductive layer of the green sub-pixel unit is 450 a, and a thickness of the first conductive layer of the blue sub-pixel unit is 350 a.
5. The display panel of claim 1, wherein the sub-pixel unit further comprises a thin film transistor disposed between the substrate and the first conductive layer, the first conductive layer is electrically connected to a common voltage terminal, and the second conductive layer is electrically connected to a source or a drain of the thin film transistor.
6. The display panel of claim 5, wherein the sub-pixel unit further comprises a passivation layer disposed between the first conductive layer and the second conductive layer;
wherein the passivation layer covers the surface of the first conductive layer, and the orthographic projection of the first conductive layer on the passivation layer is positioned in the passivation layer.
7. A method for manufacturing a display panel, comprising:
providing a substrate;
forming interlayer dielectric layers of a plurality of sub-pixel units on the substrate, wherein the sub-pixel units at least comprise a red sub-pixel unit, a green sub-pixel unit and a blue sub-pixel unit, so that the thicknesses of the interlayer dielectric layers of the sub-pixel units with different colors are different, and the thicknesses of the interlayer dielectric layers of the red sub-pixel unit, the green sub-pixel unit and the blue sub-pixel unit are gradually increased;
forming a flat layer on the interlayer dielectric layer;
forming a first conductive layer on the planarization layer;
and forming a second conductive layer insulated from the first conductive layer on the first conductive layer, and forming an electric field between the first conductive layer and the second conductive layer for controlling the luminescence of the sub-pixel unit.
8. The method of manufacturing a display panel according to claim 7, wherein the step of forming the first conductive layer on the interlayer dielectric layer comprises:
forming a first conductive film layer on the interlayer dielectric layer;
forming a patterned first sacrificial layer on the first conductive film layer;
forming a second conductive film layer over the first sacrificial layer;
forming a patterned second sacrificial layer on the second conductive film layer, and enabling orthographic projection of the second sacrificial layer and the first sacrificial layer on the substrate not to coincide;
forming a third conductive film layer over the second sacrificial layer;
forming a photoresist on the third conductive film layer, and enabling orthographic projection of the photoresist on the substrate to be not overlapped with orthographic projections of the first sacrificial layer and the second sacrificial layer on the substrate;
and removing the photoresist, the first sacrificial layer and the second sacrificial layer to form the first conductive layers of the three sub-pixel units with different colors.
9. A display device comprising a backlight module and the display panel according to any one of claims 1 to 6;
the display panel comprises an array substrate, a color film substrate and a liquid crystal layer arranged between the array substrate and the color film substrate, and the backlight module is arranged on one side, far away from the array substrate, of the color film substrate.
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