CN114910853B

CN114910853B - MRI image enhancement super-structure surface array unit assembly

Info

Publication number: CN114910853B
Application number: CN202110183909.5A
Authority: CN
Inventors: 赵乾; 池中海; 孟永钢; 郑卓肇; 易懿; 王亚魁
Original assignee: Tsinghua University; Beijing Tsinghua Changgeng Hospital
Current assignee: Tsinghua University; Beijing Tsinghua Changgeng Hospital
Priority date: 2021-02-10
Filing date: 2021-02-10
Publication date: 2024-04-26
Anticipated expiration: 2041-02-10
Also published as: CN114910853A

Abstract

The application relates to a magnetic field enhancement assembly and a magnetic field enhancement device, in particular to an MRI image enhancement super-structure surface array unit assembly. The first electrode layer and the second electrode layer are arranged oppositely to form the first structure capacitor. The non-overlapping part of the orthographic projection of the first electrode layer and the second electrode layer on the first dielectric layer can be used as a transmission wire to play a role of equivalent inductance. The first structural capacitance and the equivalent inductance may form an LC tank circuit. When the magnetic field enhancement component is used in a place with lower resonance frequency, the first structure capacitor with a smaller capacitance value can enable the resonance frequency of a loop where the magnetic field enhancement component is located to be reduced to the frequency of a radio frequency coil of the magnetic resonance system, so that the magnetic field intensity can be effectively improved.

Description

MRI image enhancement super-structure surface array unit assembly

Technical Field

The present application relates to magnetic resonance imaging technology, and in particular, to a magnetic field enhancement assembly and a magnetic field enhancement device.

Background

MRI (Magnetic Resonance Imaging ) is a non-invasive detection method, and is an important basic diagnosis technology in the fields of medicine, biology and neuroscience. The signal intensity transmitted by the traditional MRI device mainly depends on the intensity of the static magnetic field B0, and the signal-to-noise ratio and resolution of images can be improved and the scanning time can be shortened by adopting a high magnetic field system and even an ultra-high magnetic field system. However, an increase in static magnetic field strength brings about three problems: (1) The non-uniformity of the Radio Frequency (RF) field is increased, and the tuning difficulty is increased; (2) The heat production of human tissues is increased, so that potential safety hazards are brought, and adverse reactions such as dizziness, vomiting and the like are easy to occur for patients: (3) The acquisition cost is greatly increased, which is a burden for most small-scale hospitals. Therefore, how to use a static magnetic field strength as small as possible while achieving high imaging quality becomes a critical issue in MRI technology.

The traditional technical scheme is that a super-structured surface device is provided. The super-structured surface device includes a dielectric plate and first and second electrodes on front and back sides of the dielectric plate, respectively. The orthographic projection of the second electrode on the dielectric plate is positioned at two ends of the orthographic projection of the first electrode on the dielectric plate so as to form two serially connected structural capacitors. But the equivalent capacitance when two structural capacitances are connected in series is half that of one structural capacitance. When the super-structure surface device is used in the occasion with lower field intensity, namely lower resonance frequency, the equivalent capacitance when the two structural capacitances are connected in series needs to have a larger capacitance value so as to reduce the resonance frequency of the super-structure surface device to the working frequency of the magnetic resonance system. However, when two structured capacitors are connected in series, the super-structured surface device has a large loss. The larger loss can influence the improvement effect of the super-structured surface device on the signal to noise ratio of the image.

Disclosure of Invention

Based on this, it is necessary to provide a magnetic field enhancing assembly and a magnetic field enhancing device in view of the above-mentioned problems.

A magnetic field enhancing assembly comprising:

A first dielectric layer including a first surface and a second surface disposed opposite to each other;

The first electrode layer is arranged on the first surface and covers part of the first surface;

the second electrode layer is arranged on the second surface, the second electrode layer covers part of the second surface, and the orthographic projection of the first electrode layer on the first dielectric layer and the orthographic projection of the second electrode layer on the first dielectric layer are overlapped to form a first structural capacitor.

According to the magnetic field enhancement component and the magnetic field enhancement device provided by the embodiment of the application, the parts of the first electrode layer and the second electrode layer which are oppositely arranged form the first structure capacitor. The non-overlapping part of the orthographic projection of the first electrode layer and the second electrode layer on the first dielectric layer can be used as a transmission wire to play a role of equivalent inductance. The first structural capacitance and the equivalent inductance may form an LC tank circuit. When the magnetic field enhancement component is used in a place with lower resonance frequency, the first structure capacitor with a smaller capacitance value can enable the resonance frequency of a loop where the magnetic field enhancement component is located to be reduced to the frequency of a radio frequency coil of the magnetic resonance system, so that the magnetic field intensity can be effectively improved.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments or the conventional techniques of the present application, the drawings required for the descriptions of the embodiments or the conventional techniques will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to the drawings without inventive effort for those skilled in the art.

FIG. 1 is a side view of a magnetic field enhancement assembly provided in accordance with one embodiment of the present application;

FIG. 2 is a perspective view of a magnetic field enhancement assembly provided in accordance with one embodiment of the present application;

FIG. 3 is a top view of a magnetic field enhancement assembly according to an embodiment of the present application;

FIG. 4 is a bottom view of a magnetic field enhancement assembly according to an embodiment of the present application;

FIG. 5 is a side view of a magnetic field enhancement assembly according to another embodiment of the present application;

FIG. 6 is a top view of a magnetic field enhancement assembly according to an embodiment of the present application;

FIG. 7 is a bottom view of a magnetic field enhancement assembly according to an embodiment of the present application;

FIG. 8 is a schematic diagram of a front projection of a first electrode layer and a second electrode layer on a first dielectric layer according to an embodiment of the present application;

FIG. 9 is a schematic diagram of a front projection shape of a first electrode layer and a second electrode layer on a first dielectric layer according to another embodiment of the present application;

FIG. 10 is a block diagram of a magnetic field enhancement assembly according to one embodiment of the present application;

FIG. 11 is a frequency contrast diagram of a magnetic field enhancement assembly according to an embodiment of the present application during a radio frequency transmit phase and a radio frequency receive phase;

FIG. 12 is a graph depicting the effect of a magnetic field enhancement assembly according to one embodiment of the present application;

FIG. 13 is a block diagram of a magnetic field enhancement assembly according to another embodiment of the present application;

FIG. 14 is a block diagram of a magnetic field enhancement assembly according to another embodiment of the present application;

FIG. 15 is a block diagram of a magnetic field enhancement assembly according to another embodiment of the present application;

FIG. 16 is a block diagram of a magnetic field enhancement assembly according to another embodiment of the present application;

FIG. 17 is a block diagram of a magnetic field enhancement assembly according to another embodiment of the present application;

FIG. 18 is a frequency contrast diagram of a magnetic field enhancement assembly according to an embodiment of the present application during a radio frequency transmit phase and a radio frequency receive phase;

FIG. 19 is a block diagram of a magnetic field enhancement assembly according to another embodiment of the present application;

FIG. 20 is a block diagram of a magnetic field enhancement assembly according to another embodiment of the present application;

FIG. 21 is a block diagram of a magnetic field enhancement assembly according to another embodiment of the present application;

FIG. 22 is a frequency contrast diagram of a magnetic field enhancement assembly according to an embodiment of the present application during a radio frequency transmit phase and a radio frequency receive phase;

FIG. 23 is a block diagram of a magnetic field enhancement assembly according to another embodiment of the present application;

FIG. 24 is a block diagram of a magnetic field enhancement assembly according to another embodiment of the present application;

FIG. 25 is a three-dimensional view of a magnetic field enhancement device provided in accordance with one embodiment of the present application;

Fig. 26 is an exploded view of a magnetic field enhancing device according to one embodiment of the present application.

Reference numerals illustrate:

The magnetic field enhancement assembly 10, the first dielectric layer 100, the first surface 101, the second surface 102, the first end 103, the second end 104, the via 105, the first electrode layer 110, the second electrode layer 120, the third electrode layer 130, the first structural capacitance 150, the first opening 411, the second opening 412, the third opening 413, the fourth opening 414, the magnetic field enhancement device 20, the cylindrical support structure 50, the third end 51, the fourth end 53, the first annular conductive sheet 510, the second annular conductive sheet 520, the spacing structure 530, the axis 504, the detection space 509, the first switch control circuit 430, the first diode 431, the second diode 432, the first enhancement MOS transistor 433, the second enhancement MOS transistor 434, the first external capacitance 440, the second switch control circuit 450, the third diode 451, the fourth diode 452, the third enhancement MOS transistor 453, the fourth enhancement MOS transistor 454, the second external capacitance 442, the third external capacitance 443, the third switch control circuit 460, the fifth enhancement MOS transistor 461, the sixth enhancement MOS transistor 463, the fifth external capacitance 445, the fifth external capacitance 464.

Detailed Description

The present application will be further described in detail below with reference to examples, which are provided to illustrate the objects, technical solutions and advantages of the present application. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.

The numbering of the components itself, e.g. "first", "second", etc., is used herein merely to distinguish between the described objects and does not have any sequential or technical meaning. The term "coupled" as used herein includes both direct and indirect coupling (coupling), unless otherwise indicated. In the description of the present application, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element in question must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application.

In the present application, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.

The inventor has found that existing super-structured surface devices include a dielectric plate and first and second electrodes on the front and back sides of the dielectric plate, respectively. The orthographic projection of the second electrode on the dielectric plate is positioned at two ends of the orthographic projection of the first electrode on the dielectric plate so as to form two serially connected first structural capacitors. The equivalent capacitance of the two capacitors is half of the capacitance of the single first structure when the two capacitors are connected in series. When the magnetic resonance imaging device is used in the occasions with low field intensity, namely low resonance frequency, the capacitance value of the two first structure capacitors needs to be larger than the capacitance value, so that the resonance frequency of the super-constructed surface can be reduced to the working frequency of the MRI system. However, increasing the capacitance of the first structure increases loss, which affects the image signal-to-noise ratio improvement effect of the super-structure surface device.

Further, when the material and thickness of the dielectric plate are constant, it is necessary that the facing area between the first and second electrodes and the dielectric plate is increased. In the case of a super-structured surface device of a certain size, the effective area of the super-structured surface device is reduced because the first structure capacitance formed by the first electrode and the second electrode cannot generate a magnetic field distribution effective for detection.

Furthermore, the first structure capacitor has a larger volume than the capacitor element and is also larger in loss. The increased volume of the capacitive element results in greater cell-to-cell coupling. When the building block is used to construct a super-structured surface, the coupling of the super-structured surface to an existing coil, or to other cascaded super-structured surfaces, such as two super-structured surfaces used in dual-core MRI, is also increased. The large coupling effect can shift the resonant frequency of the super-structured surface and the commercial receiving coil by a predetermined operating frequency, both of which can severely degrade.

Referring to FIG. 1, a magnetic field enhancement assembly 10 is provided in accordance with an embodiment of the present application. The magnetic field enhancement assembly 10 includes a first electrode layer 110, a second electrode layer 120, and a first dielectric layer 100. The first dielectric layer 100 includes a first surface 101 and a second surface 102 disposed opposite each other. The first electrode layer 110 is disposed on the first surface 101. The first electrode layer 110 covers a portion of the first surface 101. The second electrode layer 120 is disposed on the second surface 102. The second electrode layer 120 covers a portion of the second surface 102. The orthographic projection of the first electrode layer 110 on the first dielectric layer 100 and the orthographic projection of the second electrode layer 120 on the first dielectric layer 100 are overlapped to form a first structural capacitor 150.

The first electrode layer 110 covering a part of the first surface 101 means that the first surface 101 is still partly uncovered by the first electrode layer 110. The second electrode layer 120 covering a part of the second surface 102 means that the second surface 102 is still partly uncovered by the second electrode layer 120. The first electrode layer 110 and the second electrode layer 120 overlap in part in the orthographic projection of the first dielectric layer 100. The portion of the first electrode layer 110 and the second electrode layer 120 that are disposed opposite to each other constitutes the first structural capacitor 150. The portion of the first electrode layer 110 and the second electrode layer 120, which do not overlap in the orthographic projection of the first dielectric layer 100, may serve as a transmission line, and serve as an equivalent inductance. The first structural capacitance 150 and the equivalent inductance may form an LC tank circuit. When the magnetic field enhancement device 20 is used in a low resonance frequency occasion, the first structural capacitor 150 with a small capacitance value can reduce the resonance frequency of the magnetic field enhancement devices 20 formed by the magnetic field enhancement assemblies 10 to the frequency of the radio frequency coil of the magnetic resonance system, so that the magnetic field intensity can be effectively improved.

The magnetic field enhancing assembly 10 is an MRI image enhancing super-structured surface array element assembly. The magnetic field enhancement device 20 formed by a plurality of the MRI image enhancement super-structure surface array unit assemblies can effectively improve the magnetic field intensity.

The magnetic field enhancing assembly 10 is an MRI image enhancing super-structured surface array element assembly. The cooperation of a plurality of MRI image enhancement super-structure surface array unit components can improve the intensity of a radio frequency magnetic field. The strength enhancement of the radio frequency magnetic field can improve the signal-to-noise ratio and the resolution of the acquired image.

The portion of the magnetic field enhancing assembly 10 that forms the first structural capacitance 150 produces a magnetic field that is parallel to the plane of the first dielectric layer 100. Whereas a magnetic field parallel to the first dielectric layer 100 is essentially undetectable, belonging to an ineffective magnetic field. The magnetic field generated by the portion of the magnetic field enhancing assembly 10 that constitutes the equivalent inductance is perpendicular to the first dielectric layer 100 and is effective to generate a magnetic field that is effective in the detection region.

In one embodiment, the area occupied by the overlapping portion of the orthographic projection of the first electrode layer 110 on the first dielectric layer 100 and the orthographic projection of the second electrode layer 120 on the first dielectric layer 100 is less than half the area of the first surface 101 or half the area of the second surface 102. Thus, the area of the first dielectric layer 100 constituting the first structural capacitance 150 is less than half the area of the first dielectric layer 100. By reducing the area of the first structural capacitance 150, the power consumption of the first structural capacitance 150 can be reduced. The area of the first dielectric layer 100 constituting the first structural capacitor 150 is smaller than half the area of the first dielectric layer 100, so that the coupling degree between the magnetic field enhancement component 10 and other cascading super-structure surfaces can be reduced, and the performance of the magnetic field enhancement component 10 is significantly improved.

The first dielectric layer 100 may support the first electrode layer 110 and the second electrode layer 120. The first dielectric layer 100 may have a rectangular plate-like structure. The first dielectric layer 100 may be an insulating material. In one embodiment, the material of the first dielectric layer 100 may be a glass fiber epoxy plate. The first electrode layer 110 and the second electrode layer 120 may have a rectangular plate-like structure. The materials of the first electrode layer 110 and the second electrode layer 120 may be composed of an electrically conductive non-magnetic material. In one embodiment, the materials of the first electrode layer 110 and the second electrode layer 120 may be metal materials such as gold, silver, copper, etc.

In one embodiment, the thicknesses of the first electrode layer 110 and the second electrode layer 120 may be equal. The first electrode layer 110, the second electrode layer 120, and the first dielectric layer 100 are stacked. The planes of the first electrode layer 110, the second electrode layer 120, and the first dielectric layer 100 may be substantially parallel.

Referring to fig. 2-4, in one embodiment, the first dielectric layer 100 includes opposing first and second ends 103, 104. The first electrode layer 110 extends from the second end 104 towards the first end 103. The second electrode layer 120 extends from the first end 103 towards the second end 104. The orthographic projection of the first electrode layer 110 on the first dielectric layer 100 overlaps the orthographic projection of the second electrode layer 120 on the first dielectric layer 100 to form the first structural capacitor 150. That is, the first electrode layer 110 and the second electrode layer 120 extend from opposite ends of the first dielectric layer 100 toward the middle of the first dielectric layer 100, respectively. The first electrode layer 110 and the second electrode layer 120 have overlapping portions in the front projection of the first dielectric layer 100. The overlapping portion is distant from both ends of the first dielectric layer 100.

In one embodiment, the length of the first electrode layer 110 and the second electrode layer 120 is less than three-fourths of the length of the first dielectric layer 100 and greater than one-fourth of the length of the first dielectric layer 100. In this range, the capacitance of the first capacitor 150 is smaller, so that the power consumption can be reduced. The effective inductor is longer in length, so that the magnetic field can be effectively enhanced, and the image signal-to-noise ratio improving effect of the magnetic field enhancing assembly 10 is improved.

The overlapping portion of the orthographic projections of the first electrode layer 110 and the second electrode layer 120 is located in the middle of the first dielectric layer 100. In the overlapping portion, the first electrode layer 110, the first dielectric layer 100, and the second electrode layer 120 constitute the first structural capacitance 150. The first electrode layer 110 and the second electrode layer 120 may form a transmission line at a portion where the first dielectric layer 100 is not overlapped, and function as an inductance. The first electrode layer 110 and the second electrode layer 120 may also serve as equivalent inductances at the non-stacked portions of the first dielectric layer 100. The equivalent inductance and the first structural capacitor 150 form an LC tank circuit.

The first electrode layer 110 and the second electrode layer 120 have the same width in the shape of a bar and have the same extension direction. The extending directions of the first electrode layer 110 and the second electrode layer 120 may be on a straight line, so that the width of the magnetic field enhancing member 10 can be reduced, and the volume of the magnetic field enhancing member 10 can be reduced.

In one embodiment, the portion of the first electrode layer 110 and the second electrode layer 120 that coincides with the orthographic projection of the first dielectric layer 100 is located in the middle of the first dielectric layer 100. The first structural capacitance 150 is located in the middle of the first dielectric layer 100.

The middle portion of the first dielectric layer 100 may be a portion of the first dielectric layer 100 away from an edge of the first dielectric layer 100. The middle of the first dielectric layer 100 may be the middle of the first dielectric layer 100, or may be a position that is far to the left or far to the right in the middle of the first dielectric layer 100. The first structure capacitor 150 is located in the middle of the first dielectric layer 100, which can effectively improve the symmetry of the structure of the magnetic field enhancement assembly 10, thereby improving the uniformity of the magnetic field.

In one embodiment, the target frequency range of the magnetic field enhancement assembly 10 may be 60MHz to 150MHz. In one embodiment, the target frequency range of the magnetic field enhancement assembly 10 may be 63.8 MHz (1.5T for the main magnetic field B _O of the magnetic resonance system) or 128MHz (3T for the main magnetic field B _O of the magnetic resonance system). The first dielectric layer 100 may have a rectangular shape. The length of the first dielectric layer 100 may be 250 millimeters. The length of the portion where the front projections of the first electrode layer 110 and the second electrode layer 120 overlap with each other in the front projection of the first dielectric layer 100 may be 20 mm. I.e. the length of the magnetic field enhancing assembly 10 capable of generating an effective magnetic field is 230 mm. The area of the magnetic field enhancing assembly 10 capable of generating an effective magnetic field is significantly increased.

Referring to fig. 5-7, in one embodiment, the magnetic field enhancement assembly 10 further includes a third electrode layer 130 disposed on the first surface 101. The third electrode layer 130 extends from the first end 103 towards the second end 104. The third electrode layer 130 covers a portion of the first surface 101 and is spaced apart from the first electrode layer 110. The second electrode layer 120 is electrically connected to the third electrode layer 130.

The thickness of the third electrode layer 130 may be the same as the thickness of the first electrode layer 110. The third electrode layer 130 may be connected to the second electrode layer 120 by bypassing the first dielectric layer 100. The third electrode layer 130 may also be connected to the second electrode layer 120 by a wire passing through the first dielectric layer 100. The first electrode layer 110 and the third electrode layer 130 may have an inductive effect when the magnetic field enhancing assembly 10 is placed in an excitation field of a magnetic resonance system.

The third electrode layer 130 may extend from the first end 103 of the first dielectric layer 100 toward the second end 104 and gradually approach the second electrode layer 120. The third electrode layer 130 is insulated from the first electrode layer 110, thereby preventing the first structural capacitor 150 formed by the first electrode layer 110 and the second electrode layer 120 from being shorted. The first electrode layer 110 and the third electrode layer 130 are disposed on the same side of the first dielectric layer 100. Accordingly, when the magnetic field enhancement assembly 10 is mounted to a bracket, the first surface 101 is mounted toward a side away from the middle, and damage to the first electrode layer 110 and the third electrode layer 130 by the bracket can be prevented.

In one embodiment, the length of the third electrode layer 130 is less than one-half the length of the first electrolyte layer 100. The length of the third electrode layer 130 is greater than one third of the length of the first dielectric layer 100. In this range, the equivalent inductance formed by the third electrode layer 130 has a larger length, and the area of the magnetic field enhancement unit 10 for generating the effective magnetic field can be effectively increased.

In one embodiment, the third electrode layer 130 is in a strip shape, and the extension direction and width of the third electrode layer 130 are the same as those of the first electrode layer 110. That is, the widths of the third electrode layer 130 and the first electrode layer 110 may be the same, and the third electrode layer 130 and the first electrode layer 110 may be positioned on the same straight line. The width of the first dielectric layer 100 may be equal to the width of the third electrode layer 130 and the first electrode layer 110, or slightly greater than the widths of the third electrode layer 130 and the first electrode layer 110. The width of the first dielectric layer 100 and thus the volume of the first dielectric layer 100 can be reduced as much as possible.

In one embodiment, the first dielectric layer 100 is provided with a via 105. An electrode material is disposed in the via 105. The third electrode layer 130 is electrically connected to the second electrode layer 120 through the electrode material. The electrode material may be the same as the material of the third electrode layer 130 and the second electrode layer 120, and thus the resistance may be reduced. In one embodiment, the electrode material in the via 105 and the first electrode and the third electrode layer 130 are integrally formed.

In one embodiment, an end of the third electrode layer 130 near the first electrode layer 110 coincides with the orthographic projection of the via 105. The end of the second electrode layer 120 remote from the first electrode layer 110 coincides with the orthographic projection of the via 105. I.e. the third electrode layer 130 is in contact with the electrode material located in the via 105 close to the first surface 101. The second electrode layer 120 is in contact with the electrode material in the via 105 near the second surface 102. The third electrode layer 130, the second electrode layer 120 are thus electrically connected by the electrode material in the via 105.

Referring to fig. 8, in one embodiment, an end of the first electrode layer 110 near the second electrode layer 120 has a first opening 411. The second electrode layer 120 has a second opening 412 at an end near the first electrode layer 110. The orthographic projections of the first opening 411 and the second opening 412 on the first dielectric layer 100 coincide. The first opening 411 and the second opening 412 may have the same size. The first opening 411 and the second opening 412.

The overlapping portions of the first electrode layer 110 and the second electrode layer 120 in the orthographic projection of the first dielectric layer 100 may constitute the first structural capacitance 150 when the magnetic field enhancing assembly 10 is placed in an excitation field in a magnetic resonance system. The first opening 411 and the second opening 412 can optimize local magnetic field distribution, and can improve the detection effect of the specific position of the detection part.

Referring to fig. 9, in one embodiment, an end of the first electrode layer 110 near the second electrode layer 120 has a third opening 413. The third opening 413 is spaced from the first opening 411. The second electrode layer 120 has a fourth opening 414 near the end of the first electrode layer 110. The fourth opening 414 is spaced from the second opening 412. The orthographic projection of the third opening 413 and the fourth opening 414 on the first dielectric layer 100 coincides. It is understood that the first opening 411 and the third opening 413 may have the same shape and size. The second opening 412 and the fourth opening 414 may be the same size and shape. The distance between the first opening 411 and the third opening 413 may be the same. The distance between the second opening 412 and the fourth opening 414 may be the same. The third opening 413 and the fourth opening 414 may be located at overlapping portions of the first electrode layer 110 and the second electrode layer 120 orthographically projected on the first dielectric layer 100. The third opening 413 and the fourth opening 414 can further optimize local magnetic field distribution, so as to improve the detection effect of the specific position of the detection part.

Referring to fig. 10, in one embodiment, the magnetic field enhancement assembly 10 further includes a first switch control circuit 430, and the first switch control circuit 430 is connected between the first electrode layer 110 and the second electrode layer 120. The switch control circuit 430 is configured to be turned on during a radio frequency transmission phase and turned off during a radio frequency reception phase.

Both ends of the first switch control circuit 430 are connected between the first electrode layer 110 and the second electrode layer 120. I.e. the first switch control circuit 430 may be connected in parallel with the first structural capacitance 150. Accordingly, when the first switch control circuit 430 is turned on, the first electrode layer 110 and the second electrode layer 120 are electrically connected. When the first switch control circuit 430 is turned off, the first electrode layer 110 and the second electrode layer 120 are disconnected. The turn-on voltage of the first switch control circuit 430 may be greater than 1 volt. That is, when the voltage difference between the first electrode layer 110 and the second electrode layer is greater than 1 volt, the first switch control circuit 430 is turned on. When the voltage difference between the first electrode layer 110 and the second electrode layer 120 is less than 1 volt, the first switch control circuit 430 is turned off.

Referring to fig. 11, in the rf emission stage, the first switch control circuit 430 is turned on due to the larger voltage difference between the first electrode layer 110 and the second electrode layer 120. The first electrode layer 110 and the second electrode layer 120 are electrically connected. At this time, the first electrode layer 110 and the second electrode layer 120 cannot form the first structural capacitor 150. I.e. the magnetic field enhancement device 2 constituted by a plurality of the magnetic field enhancement assemblies 10 does not have resonance properties in the frequency band of interest. The magnetic field enhancement assembly 10 is therefore incapable of enhancing the radio frequency transmit field.

In the rf receiving stage, the voltage difference between the first electrode layer 110 and the second electrode layer 120 is smaller, the first switch control circuit 430 is turned off, and the first electrode layer 110 and the second electrode layer are turned off. The first electrode layer 110 and the second electrode layer 120 form the first structural capacitor 150. The magnetic field enhancement device 20 of the magnetic field enhancement assembly 10 thus has a good resonant frequency during the radio frequency reception phase. The magnetic field enhancement device 20 may act to enhance the rf emission field.

Referring to fig. 12, a diagram of MRI image enhancement effects of the magnetic field enhancement assembly 10 provided in accordance with the prior art and embodiments of the present application is shown.

A is a body coil commonly adopted by a magnetic resonance system, the image signal-to-noise ratio is very low, and the particle sensation is serious;

b when the magnetic field enhancing assembly 10 is not provided with the first switch control circuit 430, a lot of artifacts appear in the formed image due to the magnetic field enhancing assembly 10 interfering with the radio frequency transmission field;

The magnetic field enhancement device 20 formed by the magnetic field enhancement component 10 provided by the embodiment of the application has high image signal to noise ratio, clear and fine image and no introduction of artifacts. Thus, the magnetic field enhancement device 20 formed by a plurality of the magnetic field enhancement assemblies 10 has better sequence versatility.

In one embodiment, one end of the first switch control circuit 430 is connected to a portion where the first electrode layer 110 and the second electrode layer 120 overlap in the orthographic projection of the first dielectric layer 100. The other end of the first switch control circuit 430 is connected to a portion where the second electrode layer 120 and the first electrode layer 110 overlap in the front projection of the first dielectric layer 100. That is, the first switch control circuit 430 can be connected to the first electrode layer 110 at a position that constitutes the first structure capacitor 150. It is thus possible to avoid that the first switch control circuit 430 is connected to a portion of the first electrode layer 110 that does not constitute the second structural capacitance 152 and the third structural capacitance 153. Thereby avoiding the influence on the portion of the first electrode layer 110 constituting the equivalent inductance.

Referring to fig. 13, in one embodiment, the magnetic field enhancement assembly 10 further includes a first external capacitor 440. Both ends of the first external capacitor 440 are respectively connected to the first electrode layer 110 and the second electrode layer 120. When the use of the magnetic field enhancement assembly 10 is fixed, for example, the resonant frequency of the magnetic field enhancement device 20 formed by a plurality of the magnetic field enhancement assemblies 10 is determined, the first external capacitor 440 may be a fixed capacitor. It is understood that the fixed capacitance or the adjustable capacitance of the first external capacitor 440 is within the protection range.

The resonance performance of the magnetic field enhancement device 20 formed by the magnetic field enhancement assemblies 10 can be adjusted by the first external capacitor 440 and the structural capacitor formed by the first electrode layer 110, the second electrode layer and the first dielectric layer 100.

Referring to fig. 14, in one embodiment, the first switch control circuit 430 includes a first diode 431 and a second diode 432. An anode of the first diode 431 is connected to the first electrode layer 110. The cathode of the first diode 431 is connected to the second electrode layer 120. The cathode of the second diode 432 is connected to the first electrode layer 110, and the anode of the second diode 432 is connected to the second electrode layer 120.

It is understood that the turn-on voltage of the first diode 431 and the second diode 432 may be between 0 volt and 1 volt. In one embodiment, the turn-on voltage of the first diode 431 and the second diode 432 may be 0.8V. The first diode 431 and the second diode 432 are respectively connected in series between the first electrode layer 110 and the second electrode layer, and the first diode 431 and the second diode 432 are reversely connected.

Due to the alternating nature of radio frequency. The induced voltage generated by the first electrode layer 110 and the second electrode layer 120 is also an alternating voltage. In the radio frequency emission phase, the turn-on voltage of the first diode 431 and the second diode 432 has been exceeded due to the voltage difference between the first electrode layer 110 and the second electrode layer 120. Therefore, whichever of the first electrode layer 110 and the second electrode layer 120 has a higher voltage, one of the first diode 431 and the second diode 432 is always in an on state. Thus electrically connecting the first electrode layer 110 and the second electrode layer.

And in the rf receiving stage, since the voltage difference between the first electrode layer 110 and the second electrode layer is smaller than the turn-on voltage of the first diode 431 and the second diode 432. Therefore, the first diode 431 and the second diode 432 are in a non-conductive state regardless of which of the first electrode layer 110 and the second electrode layer 120 is high in voltage.

Referring to fig. 15, in one embodiment, the first switch control circuit 430 further includes a first enhancement MOS transistor 433 and a second enhancement MOS transistor 434. The source electrode of the first enhancement MOS transistor 433 is connected to the second electrode layer. The drain electrode of the first enhancement MOS transistor 433 is connected to the first electrode layer 110. The gate of the first enhancement MOS transistor 433 is connected to the first electrode layer 110. The source of the second enhancement MOS transistor 434 is connected to the first electrode layer 110. The drain of the second enhancement MOS transistor 434 is connected to the second electrode layer 120. The gate of the second enhancement MOS transistor 434 is connected to the second electrode layer 120. Namely, the first enhancement type MOS tube 433 and the second enhancement type MOS tube 434 are reversely connected.

The first enhancement MOS transistor 433 and the second enhancement MOS transistor 434 are not turned on when the gate voltage is less than the threshold voltage, that is, a conductive channel can occur only when the magnitude of the gate voltage is greater than the threshold voltage thereof.

It will be appreciated that during the rf emission phase, since the voltage difference between the first electrode layer 110 and the second electrode layer 120 has exceeded the threshold voltage at which the first enhancement MOS transistor 433 and the second enhancement MOS transistor 434 are turned on, no matter which of the first electrode layer 110 and the second electrode layer is high, one of the first enhancement MOS transistor 433 and the second enhancement MOS transistor 434 is in an on state. Thus electrically connecting the first electrode layer 110 and the second electrode layer.

In the rf receiving stage, the voltage difference between the first electrode layer 110 and the second electrode layer is smaller than the on threshold voltage of the first enhancement MOS transistor 433 and the second enhancement MOS transistor 434. Therefore, regardless of which of the first electrode layer 110 and the second electrode layer 120 has a high voltage, the first enhancement MOS transistor 433 and the second enhancement MOS transistor 434 are in a non-conductive state.

Referring to fig. 17, in one embodiment, the magnetic field enhancement assembly 10 further includes a second external capacitor 442, the third external capacitor 443, and a second switch control circuit 450. The second external capacitor 442 and the third external capacitor 443 are connected in series between the first electrode layer 110 and the second electrode layer 120. One end of the second switch control circuit 450 is connected to the first electrode layer 110, the other end of the second switch control circuit 450 is connected between the second external capacitor 442 and the third external capacitor 443, and the second switch control circuit 450 is configured to be turned on in a radio frequency transmitting stage and turned off in a radio frequency receiving stage.

The second external capacitor 442 and the third external capacitor 443 may be fixed capacitors or tunable capacitors. When the resonant frequency of the loop in which the magnetic field enhancement assembly 10 is located is determined, a suitable fixed capacitance may be selected as the second external capacitance 442 and the third external capacitance 443. The second external capacitor 442 and the third external capacitor 443 can be tunable capacitors when the resonant frequency of the loop in which the magnetic field enhancing device 10 is located is required to be adjusted as required.

It will be appreciated that the radio frequency transmit phase and the radio frequency receive phase differ in time sequence by tens to thousands of milliseconds. The radio frequency power of the radio frequency transmit phase and the radio frequency receive phase differ by 3 orders of magnitude. The voltage on the structure capacitance during the rf transmission phase is between a few volts and a few hundred volts. And during the radio frequency receiving phase, the voltage across the structural capacitance is in the millivolt level.

One end of the second switch control circuit 450 is connected to the first electrode layer 110, and the other end of the second switch control circuit 450 is connected between the second external capacitor 442 and the third external capacitor 443. Therefore, when the second switch control circuit 450 is turned on, the second external capacitor 442 is shorted. Only the third external capacitor 443 is connected between the first electrode layer 110 and the second electrode layer 120. When the second switch control circuit 450 is turned off, the second external capacitor 442 and the third external capacitor 443 are connected in series between the first electrode layer 110 and the second electrode layer 120.

The turn-on voltage of the second switch control circuit 450 may be greater than 1 volt. That is, when the voltage difference between the first electrode layer 110 and the second electrode layer is greater than 1 volt, the second switch control circuit 450 is turned on. The second switch control circuit 450 is turned off when the voltage difference between the first electrode layer 110 and the second electrode layer 120 is less than 1 volt.

During the rf transmission phase, the second switch control circuit 450 is turned on due to the large voltage difference across the structure capacitance. The second external capacitor 442 is shorted. Only the third external capacitor 443 is connected between the first electrode layer 110 and the second electrode layer 120. The degree of detuning of the magnetic field enhancement device 20 formed by the magnetic field enhancement assembly 10 during the rf emission phase can be adjusted by adjusting the third external capacitance 443. I.e. the degree of detuning of the magnetic field enhancement device 20 during the radio frequency emission phase, can be adjusted by the third external capacitance 443. At this time, the third external capacitor 443 is connected to the circuit, and the equivalent capacitance is larger, and the resonant frequency is low.

The resonance frequency of the magnetic field enhancement device 20 formed by the magnetic field enhancement assemblies 10 can be precisely adjusted through the third external capacitor 443, so that the original magnetic field strength of the detected region is maintained, the interference of the magnetic field enhancement assemblies 10 on the radio frequency emission stage is eliminated, and the clinical practicability of the magnetic field enhancement assembly 20 formed by the magnetic field enhancement assemblies 10 can be effectively improved. So that the magnetic field enhancement assembly 20 is applicable to all sequences of magnetic resonance systems.

And during the rf receiving phase, the voltage difference across the structural capacitor is small, and the second switch control circuit 450 is turned off. The second external capacitor 442 and the third external capacitor 443 are connected in series between the first electrode layer 110 and the second electrode layer 120. At this time, the equivalent capacitances of the second external capacitor 442 and the third external capacitor 443 are small, and the resonance frequency of the magnetic field enhancement device 20 formed by the plurality of magnetic field enhancement components 10 is high.

Referring to fig. 18, the second external capacitor 442 and the third external capacitor 443 are adjusted to enable the magnetic field enhancement device 20 formed by the magnetic field enhancement assemblies 10 to have good resonant frequency during the rf receiving stage. Eventually bringing the resonance frequency of the magnetic field enhancing device 20 during the receive phase to the operating frequency of the magnetic resonance system. The magnetic field enhancement device 20 formed by the magnetic field enhancement assembly 10 can enhance the rf emission field.

Referring to fig. 19, in one embodiment, the second switch control circuit 450 includes a third diode 451 and a fourth diode 452. An anode of the third diode 451 is connected to the first electrode layer 110, and a cathode of the third diode 451 is connected between the second external capacitor 442 and the third external capacitor 443. The anode of the fourth diode 452 is connected between the second external capacitor 442 and the third external capacitor 443. The cathode of the fourth diode 452 is connected to the first electrode layer 110.

It is understood that the turn-on voltage of the third diode 451 and the fourth diode 452 may be between 0 volts and 1 volt. In one embodiment, the turn-on voltage of the third diode 451 and the fourth diode 452 may be 0.8V. The third diode 451 and the fourth diode 452 are respectively connected in series between the first electrode layer 110 and the second electrode layer, i.e., the third diode 451 and the fourth diode 452 are reversely connected.

Due to the alternating nature of radio frequency. The induced voltage generated by the first electrode layer 110 and the second electrode layer 120 is also an alternating voltage. In the radio frequency emission phase, the turn-on voltage of the third diode 451 and the fourth diode 452 has been exceeded due to the voltage difference between the first electrode layer 110 and the second electrode layer 120. Therefore, whichever of the first electrode layer 110 and the second electrode layer 120 has a high voltage, one of the third diode 451 and the fourth diode 452 is always in an on state. The second external capacitor 442 is shorted.

And in the rf receiving stage, since the voltage difference between the first electrode layer 110 and the second electrode layer is smaller than the turn-on voltage of the third diode 451 and the fourth diode 452. Therefore, no matter which of the first electrode layer 110 and the second electrode layer 120 has a high voltage, the third diode 451 and the fourth diode 452 are in a non-conductive state, and the second external capacitor 442 and the third external capacitor 443 are connected in series between the first electrode layer 110 and the second electrode layer 120.

Referring to fig. 20, in one embodiment, the second switch control circuit 450 further includes a third enhancement MOS transistor 453 and a fourth enhancement MOS transistor 454. The source of the third enhancement MOS tube 453 is connected between the second external capacitor 442 and the third external capacitor 443. The drain electrode of the third enhancement MOS transistor 453 is connected to the first electrode layer 110. The gate 453 of the third enhancement MOS transistor is connected to the first electrode layer 110. The source of the fourth enhancement MOS transistor 454 is connected to the first electrode layer 110. The drain of the fourth enhancement MOS transistor 454 is connected between the second external capacitor 442 and the third external capacitor 443. The gate of the fourth enhancement MOS transistor 454 is connected between the second external capacitor 442 and the third external capacitor 443. Namely, the third enhancement MOS tube 453 and the fourth enhancement MOS tube 454 are reversely connected.

The third enhancement MOS transistor 453 and the fourth enhancement MOS transistor 454 are not turned on when the gate voltage is smaller than the threshold voltage, that is, a conductive channel can occur only when the magnitude of the gate voltage is larger than the threshold voltage thereof.

It will be appreciated that during the rf emission phase, since the voltage difference between the first electrode layer 110 and the second electrode layer 120 has exceeded the threshold voltage at which the third enhancement MOS transistor 453 and the fourth enhancement MOS transistor 454 are turned on, no matter which of the first electrode layer 110 and the second electrode layer is high, one of the third enhancement MOS transistor 453 and the fourth enhancement MOS transistor 454 is in an on state. The second external capacitor 442 is shorted.

In the rf receiving stage, the voltage difference between the first electrode layer 110 and the second electrode layer is smaller than the on threshold voltage of the third enhancement MOS transistor 453 and the fourth enhancement MOS transistor 454. Therefore, the third enhancement MOS transistor 453 and the fourth enhancement MOS transistor 454 are in a non-conductive state no matter which of the first electrode layer 110 and the second electrode layer 120 is high in voltage. At this time, the second external capacitor 442 and the third external capacitor 443 are connected in series between the first electrode layer 110 and the second electrode layer 120.

The second switch control circuit 450 is turned off during the rf receiving phase, and the first electrode layer 110 and the fourth electrode layer 140 can form the third structural capacitor 153. The third structural capacitor 153 and the second structural capacitor 152 cooperate to further enhance the magnetic field enhancement effect.

In one embodiment, one end of the second switch control circuit 450 is connected to a position where the first electrode layer 110 and the second electrode layer 120 have overlapping portions in the orthographic projection of the first dielectric layer 100. The other end of the second switch control circuit 450 is connected to a position where the second electrode layer 120 and the first electrode layer 110 have a superposition portion in the front projection of the first dielectric layer 100. That is, the second switch control circuit 450 can be connected to the first electrode layer 110 at a position that constitutes the second structure capacitor 152. It is therefore possible to avoid that the second switch control circuit 450 is connected to a portion of the first electrode layer 110 that does not constitute the second structural capacitance 152 and the third structural capacitance 153. Since the first electrode layer 110 does not constitute a portion of the second structure capacitance 152 and the third structure capacitance 153, it can function as an equivalent inductance. It is possible to avoid an influence on a portion where the equivalent inductance is constituted by the first electrode layer 110.

Referring to fig. 21, in one embodiment, the magnetic field enhancement assembly 10 further includes a fourth external capacitor 444, a fifth external capacitor 445, and a third switch control circuit 460. The orthographic projection of the first electrode layer 110 on the first dielectric layer 100 and the orthographic projection of the second electrode layer 120 on the first dielectric layer 100 are overlapped to form a first structural capacitor 150. Both ends of the fourth external capacitor 444 are connected between the first electrode layer 110 and the second electrode layer 120. The fifth external capacitor 445 and the third switch control circuit 460 are connected in series between the first electrode layer 110 and the second electrode layer 120, and the third switch control circuit 460 is configured to be turned on during a radio frequency transmitting phase and turned off during a radio frequency receiving phase.

The second external capacitor 442 and the fifth external capacitor 445 may be fixed capacitors or tunable capacitors. When the resonance frequency of the magnetic field enhancement device 20 constituted by a plurality of the magnetic field enhancement assemblies 10 is determined, an appropriate fixed capacitance may be selected as the second external capacitance 442 and the fifth external capacitance 445. The second external capacitor 442 and the fifth external capacitor 445 may be tunable capacitors when the resonant frequency of the magnetic field enhancement device 20 formed by the plurality of magnetic field enhancement assemblies 10 is desired to be tuned.

And the third external capacitor 443 may be a fixed capacitor or an adjustable capacitor. When the resonance frequency of the magnetic field enhancement device 20 constituted by a plurality of the magnetic field enhancement assemblies 10 is determined, an appropriate fixed capacitance may be selected as the second external capacitance 442 and the third external capacitance 443. The second external capacitor 442 and the third external capacitor 443 can be tunable capacitors when the resonant frequency of the loop in which the magnetic field enhancing device 10 is located is required to be adjusted as required.

The third switch control circuit 460 and the fifth external capacitor 445 are connected in series between the first electrode layer 110 and the second electrode layer 120. Therefore, when the third switch control circuit 460 is turned on, the fifth external capacitor 445 and the fourth external capacitor 444 are connected in parallel to the first electrode layer 110 and the second electrode layer 120. When the total capacitance of the magnetic field enhancement assembly 10 is equal, the capacitance of the fifth external capacitor 445 and the fourth external capacitor 444 in parallel is larger than the capacitance of the two capacitors in series, so that the capacitance of the first structure capacitor 150 required can be smaller, and thus the magnetic field enhancement assembly 10 has lower loss.

In the radio frequency transmission stage, the resonant frequency of the loop in which the magnetic field enhancing assembly 10 is located deviates from the working frequency of the magnetic resonance system, so that by adjusting the fifth external capacitor 445 and the fourth external capacitor 444, it can be ensured that the magnetic field strength of the magnetic field enhancing assembly 10 is the same in the radio frequency transmission stage of the magnetic resonance system.

In the emission phase, the voltage difference between the first electrode layer 110 and the second electrode layer 120 is large, and the third switch control circuit 460 is turned on. The fourth external capacitor 444 and the fifth external capacitor 445 are connected in series between the first electrode layer 110 and the second electrode layer 120.

And during the rf receiving phase, the voltage difference between the first electrode layer 110 and the second electrode layer 120 is small, and the third switch control circuit 460 is turned off. Only the fourth external capacitor 444 is connected in series between the first electrode layer 110 and the second electrode layer 120. By adjusting the fourth external capacitor 444, the resonance frequency of the magnetic field enhancement device 20 formed by the magnetic field enhancement assemblies 10 can be adjusted, so that the resonance frequency is equal to the frequency of the radio frequency coil, thereby greatly enhancing the radio frequency receiving field and improving the image signal-to-noise ratio.

Referring to fig. 22, by adjusting the fourth external capacitor 444 and the fifth external capacitor 445, the magnetic field enhancement device 20 formed by the magnetic field enhancement components 10 can have good resonant frequency in the rf receiving stage. Eventually, the resonance frequency of the magnetic field enhancement device 20 formed by a plurality of the magnetic field enhancement assemblies 10 reaches the working frequency of the magnetic resonance system in the receiving stage.

Referring to fig. 23, in one embodiment, the magnetic field enhancing assembly 10 includes a fifth diode 461 and a sixth diode 462. An anode of the fifth diode 461 is connected to the first electrode layer 110. The cathode of the fifth diode 461 is connected to one end of the fifth external capacitor 445. An anode of the sixth diode 462 is connected to one end of the fifth external capacitor 445. The cathode of the sixth diode 462 is connected to the first electrode layer 110.

It is understood that the turn-on voltage of the fifth diode 461 and the sixth diode 462 may be between 0 volts and 1 volt. In one embodiment, the turn-on voltage of the fifth diode 461 and the sixth diode 462 may be 0.8V. The fifth diode 461 and the sixth diode 462 are respectively connected in series between the first electrode layer 110 and the second electrode layer, i.e., the fifth diode 461 and the sixth diode 462 are reversely connected.

Due to the alternating nature of radio frequency. The induced voltage generated by the first electrode layer 110 and the second electrode layer 120 is also an alternating voltage. In the radio frequency emission phase, the turn-on voltage of the fifth diode 461 and the sixth diode 462 has been exceeded due to the voltage difference between the first electrode layer 110 and the second electrode layer 120. Therefore, whichever of the first electrode layer 110 and the second electrode layer 120 has a higher voltage, one of the fifth diode 461 and the sixth diode 462 is always in an on state. The fourth external capacitor 444 and the fifth external capacitor 445 are thus connected in parallel between the first electrode layer 110 and the second electrode layer 120.

And in the rf receiving stage, since the voltage difference between the first electrode layer 110 and the second electrode layer is smaller than the turn-on voltage of the fifth diode 461 and the sixth diode 462. Therefore, no matter which of the first electrode layer 110 and the second electrode layer 120 has a high voltage, the fifth diode 461 and the sixth diode 462 are in a non-conductive state, and only the fourth external capacitor 444 is connected between the first electrode layer 110 and the second electrode layer 120.

Referring to fig. 24, in one embodiment, the third switch control circuit 460 further includes a fifth enhancement MOS transistor 463 and a sixth enhancement MOS transistor 464. The source of the fifth enhancement MOS tube 463 is connected to one end of the fifth external capacitor 445. The drain electrode of the fifth enhancement MOS transistor 463 is connected to the first electrode layer 110. The gate of the fifth enhancement MOS transistor 463 is connected to the first electrode layer 110. The source of the sixth enhancement MOS transistor 464 is connected to the first electrode layer 110. The drain electrode of the sixth enhancement MOS transistor 464 is connected to one end of the fifth external capacitor 445. The gate of the sixth enhancement MOS transistor 464 is connected to one end of the fifth external capacitor 445. Namely the fifth enhancement type MOS tube 463 and the sixth enhancement type MOS tube 464 are reversely connected.

It will be appreciated that the fifth enhancement MOS 463 and the sixth enhancement MOS 464 are non-conductive when the gate voltage is less than the threshold voltage, i.e. a conductive channel is only present when the magnitude of the gate voltage is greater than its threshold voltage.

In the rf emission phase, since the voltage difference between the first electrode layer 110 and the second electrode layer 120 exceeds the threshold voltage at which the fifth enhancement MOS transistor 463 and the sixth enhancement MOS transistor 464 are turned on, no matter which of the first electrode layer 110 and the second electrode layer 120 is high, one of the fifth enhancement MOS transistor 463 and the sixth enhancement MOS transistor 464 is in the on state. The fourth external capacitor 444 and the fifth external capacitor 445 are thus connected in parallel between the first electrode layer 110 and the second electrode layer 120.

In the rf receiving stage, the voltage difference between the first electrode layer 110 and the second electrode layer is smaller than the on threshold voltage of the fifth enhancement MOS transistor 463 and the sixth enhancement MOS transistor 464. Therefore, whichever of the first electrode layer 110 and the second electrode layer 120 has a higher voltage, the fifth enhancement MOS transistor 463 and the sixth enhancement MOS transistor 464 are in a non-conductive state. The fourth external capacitor 444 is connected between the first electrode layer 110 and the second electrode layer 120.

In one embodiment, one end of the third switch control circuit 460 is connected to a position where the first electrode layer 110 and the second electrode layer 120 have overlapping portions in the orthographic projection of the first dielectric layer 100. The other end of the third switch control circuit 460 is connected to a position where the second electrode layer 120 and the first electrode layer 110 have a superposition portion in the front projection of the first dielectric layer 100. That is, the third switch control circuit 460 can be connected to the first electrode layer 110 at a position that is a part of the second structure capacitor 152. It is therefore possible to avoid the third switch control circuit 460 from being connected to a portion of the first electrode layer 110 that does not constitute the second structural capacitance 152 and the third structural capacitance 153. The portions of the first electrode layer 110 that do not constitute the second structure capacitance 152 and the third structure capacitance 153 have an equivalent inductance effect. Thereby avoiding the influence on the portion of the first electrode layer 110 constituting the equivalent inductance.

Referring to fig. 25-26, embodiments of the present application also provide a magnetic field enhancement device 20. The magnetic field enhancement device 20 includes a cylindrical support structure 50, a first annular conductive sheet 510, a second annular conductive sheet 520, and a plurality of the magnetic field enhancement assemblies 10 described in the above embodiments. A plurality of the magnetic field enhancement assemblies 10 extend along the third end 51 toward the fourth end 53. The first annular conductive sheet 510 is disposed on the cylindrical support structure 50 and is adjacent to the third end 51. The first annular conductive sheet 510 is electrically connected to the portions of the plurality of magnetic field enhancement assemblies 10 located at the third end 51. The second annular conductive tab 520 is disposed on the cylindrical support structure 50 proximate the fourth end 53. The second annular conductive tab 520 is electrically connected to the portions of the plurality of magnetic field enhancement assemblies 10 at the fourth end 53. The cylindrical support structure 50 may enclose a detection space 509. The detection space 509 may be adapted to accommodate a detection site. The detection part can be an arm, a leg, an abdomen and the like. The plurality of magnetic field enhancement assemblies 10 are equally spaced apart to improve the uniformity of the local magnetic field.

A plurality of the magnetic field enhancement assemblies 10 may be disposed at equally spaced intervals on the side surfaces of the cylindrical support structure 50. The first annular conductive sheet 510 and the second annular conductive sheet 520 are disposed at opposite ends of the cylindrical support structure 50, respectively, and are disposed around the axis 504 of the cylindrical support structure 50. Both ends of each of the magnetic field enhancement members 10 are connected to the first and second annular conductive sheets 510 and 520, respectively.

The first annular conductive sheet 510 is connected to the first electrode layer 110 of each of the magnetic field enhancement assemblies 10. The second annular conductive sheet 520 is connected to the second electrode layer 120 of each of the magnetic field enhancement assemblies 10. The first annular conductive sheet 510 and the second annular conductive sheet 520 may be disposed around the axis 504 of the cylindrical support structure 50, respectively, i.e., the first annular conductive sheet 510 and the second annular conductive sheet 520 are both annular structures. In one embodiment, the first annular conductive sheet 510 and the second annular conductive sheet 520 may be respectively disposed around the outer wall of the cylindrical support structure 50 and respectively connect the first electrode layer 110 and the second electrode layer 120 of each of the magnetic field enhancement assemblies 10. The plurality of magnetic field enhancement assemblies 10 are connected end to end through the first annular conductive sheet 510, the second annular conductive sheet 520, the first electrode layer 110 and the second electrode layer 120, so that the magnetic field enhancement device 20 is isotropic, and uniformity of a magnetic field can be improved.

In one embodiment, a plurality of limit structures 530 are spaced around the side surface of the cylindrical support structure 50. Each of the magnetic field enhancement assemblies 10 corresponds to two of the spacing structures 530 in a direction along the third end 51 to the fourth end 53. That is, two of the limiting structures 530 are respectively fixed to two ends of one of the magnetic field enhancement assemblies 10, and the magnetic field enhancement assemblies 10 are fixed to the side wall of the cylindrical supporting structure 50.

In one embodiment, the limiting structure 530 may be slotted. The through slots may be used for insertion of the magnetic field enhancing assembly 10. The two through slots respectively limit two ends of the magnetic field enhancement assembly 10. The magnetic field enhancing assembly 10 may be fixed to a side surface of the cylindrical support structure 50 by the stopper structure 530.

The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.

The above examples merely represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the patent. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.

Claims

1. A magnetic field enhancing assembly, comprising:

a first dielectric layer (100) comprising a first surface (101) and a second surface (102) arranged opposite each other;

A first electrode layer (110) disposed on the first surface (101), the first electrode layer (110) covering a portion of the first surface (101);

A second electrode layer (120) disposed on the second surface (102), where the second electrode layer (120) covers a portion of the second surface (102), and a front projection of the first electrode layer (110) on the first dielectric layer (100) overlaps a front projection of the second electrode layer (120) on the first dielectric layer (100) to form a first structural capacitor (150), where the first dielectric layer (100) includes a first end (103) and a second end (104) opposite to each other; the first electrode layer (110) and the second electrode layer (120) are strip-shaped with the same width, the first electrode layer (110) extends from the second end (104) to the first end (103), and the second electrode layer (120) extends from the first end (103) to the second end (104); the orthographic projection of the first electrode layer (110) on the first dielectric layer (100) and the orthographic projection of the second electrode layer (120) on the first dielectric layer (100) are overlapped to form the first structural capacitor (150);

And a third electrode layer (130) disposed on the first surface (101) and spaced from the first electrode layer (110), the third electrode layer (130) extending from the first end (103) to the second end (104) and covering a portion of the first surface (101), and the second electrode layer (120) being electrically connected to the third electrode layer (130).

2. The magnetic field enhancement assembly of claim 1, wherein the portion of the first electrode layer (110) and the second electrode layer (120) that coincide in orthographic projection of the first dielectric layer (100) is located in a middle portion of the first dielectric layer (100).

3. The magnetic field enhancement assembly of claim 1, wherein the third electrode layer (130) is strip-shaped, the third electrode layer (130) extending in the same direction and width as the first electrode layer (110).

4. A magnetic field enhancement assembly according to claim 3, wherein the first dielectric layer (100) is provided with a via (105), an electrode material being provided in the via (105), the third electrode layer (130) being electrically connected to the second electrode layer (120) by means of the electrode material.

5. The magnetic field enhancement assembly of claim 4, wherein an end of the third electrode layer (130) proximate the first electrode layer (110) coincides with an orthographic projection of the via (105), and an end of the second electrode layer (120) distal from the first electrode layer (110) coincides with an orthographic projection of the via (105).

6. The magnetic field enhancement assembly of claim 1, wherein an end of the first electrode layer (110) adjacent to the second electrode layer (120) has a first gap (411), an end of the second electrode layer (120) adjacent to the first electrode layer (110) has a second gap (412), and the orthographic projections of the first gap (411) and the second gap (412) coincide in the first dielectric layer (100).

7. The magnetic field enhancement assembly of claim 6, wherein an end of the first electrode layer (110) adjacent to the second electrode layer (120) has a third gap (413), the third gap (413) is spaced apart from the first gap (411), an end of the second electrode layer (120) adjacent to the first electrode layer (110) has a fourth gap (414), the fourth gap (414) is spaced apart from the second gap (412), and the orthographic projections of the third gap (413) and the fourth gap (414) on the first dielectric layer (100) coincide.

8. The magnetic field enhancement assembly of claim 1, wherein an area occupied by a portion of the orthographic projection of the first electrode layer (110) on the first dielectric layer (100) and the orthographic projection of the second electrode layer (120) on the first dielectric layer (100) is less than half an area of the first surface (101) or an area of the second surface (102).

9. A magnetic field enhancing device, comprising:

A cylindrical support structure (50) having two spaced-apart opposed third (51) and fourth (53) ends;

a plurality of magnetic field enhancement assemblies (10) according to any one of claims 1-8, spaced apart from said cylindrical support structure (50) and extending along said third end (51) toward said fourth end;

A first annular conductive sheet (510) disposed on the cylindrical support structure (50) and proximate the third end (51); -said first annular conductive sheet (510) is connected to said first electrode layer (110) of each of said magnetic field enhancing assemblies (10); and

And a second annular conductive sheet (520) disposed on the cylindrical support structure (50) and adjacent to the fourth end (53), the second annular conductive sheet (520) being connected to the second electrode layer (120) of each of the magnetic field enhancement assemblies (10).