CN114910844B

CN114910844B - Magnetic field enhancement assembly and magnetic field enhancement device

Info

Publication number: CN114910844B
Application number: CN202110183924.XA
Authority: CN
Inventors: 赵乾; 池中海; 郑卓肇; 孟永钢; 易懿; 王亚魁; 周济
Original assignee: Tsinghua University; Beijing Tsinghua Changgeng Hospital
Current assignee: Tsinghua University; Beijing Tsinghua Changgeng Hospital
Priority date: 2021-02-10
Filing date: 2021-02-10
Publication date: 2024-04-19
Anticipated expiration: 2041-02-10
Also published as: CN114910844A

Abstract

The application relates to a magnetic field enhancement assembly and a magnetic field enhancement device. The magnetic field enhancement assembly includes a first dielectric layer, a first electrode layer, a second electrode layer, and a third electrode layer. The first dielectric layer includes opposing first and second surfaces. The first electrode layer is arranged on the first surface. The first electrode layer includes a first sub-electrode layer, a second sub-electrode layer, and a first connection layer connected between the first sub-electrode layer and the second sub-electrode layer. The second electrode layer and the third electrode layer have equal widths and are arranged on the second surface at opposite intervals. The second electrode layer, the first dielectric layer and the first sub-electrode layer form a second structural capacitance. The third electrode layer, the first dielectric layer and the second sub-electrode layer form a third structural capacitance. The width of the first connection layer is smaller than that of the first sub-electrode layer. The area of the detection part covered by the first electrode layer is reduced, the shielding effect of the first electrode layer is weakened, the transmission capability of the feedback signal is enhanced, and the signal quality is improved.

Description

Magnetic field enhancement assembly and magnetic field enhancement device

Technical Field

The application relates to the technical field of detection, in particular to a magnetic field enhancement assembly and a magnetic field enhancement device.

Background

The radio frequency coil of the traditional MRI collects human body feedback signals in a coil resonance mode, and the strength of the human body feedback signals influences the quality of signals collected by the radio frequency coil, so that the signal-to-noise ratio and the resolution of images are influenced. The intensity of the human feedback signal is related to the static magnetic field intensity. The traditional technology increases the magnetic field intensity of human feedback signals by adding the super-structure surface device, thereby improving the signal quality acquired by the radio frequency coil.

But the connection layer in the super-structured surface device is used to connect the electrode layer and other devices. The width of the electrode layer is the same as that of the electrode layer, so that the coverage area of the connecting layer is larger, the shielding effect of the connecting layer is stronger, and human body feedback signals encounter the connecting layer to be blocked and spread. The connecting layer enables the human body feedback signal after the super-structure surface is enhanced to be unable to be conducted to the outside of the super-structure surface and unable to be collected by the radio frequency coil, and image quality is reduced.

Disclosure of Invention

Based on this, it is necessary to provide a magnetic field enhancing member and a magnetic field enhancing device for the problem that the image quality is reduced by the connection layer.

A magnetic field enhancement assembly includes a first dielectric layer, a first electrode layer, a second electrode layer, and a third electrode layer. The first dielectric layer has opposite first and second ends. The first dielectric layer includes opposing first and second surfaces. The first electrode layer is arranged on the first surface. The first electrode layer extends along the first end toward the second end. The first electrode layer includes a first sub-electrode layer, a second sub-electrode layer, and a first connection layer. The widths of the first sub-electrode layer and the second sub-electrode layer are the same and are arranged at opposite intervals. One end of the first connecting layer is connected with the first sub-electrode layer. The other end of the first connecting layer is connected with the second sub-electrode layer. The width of the first connection layer is smaller than that of the first sub-electrode layer.

The second electrode layer and the third electrode layer are oppositely arranged on the second surface at intervals. The orthographic projection of the second electrode layer on the first dielectric layer is overlapped with the orthographic projection part of the first sub-electrode layer on the first dielectric layer. The second electrode layer, the first dielectric layer and the first sub-electrode layer form a second structural capacitance. The orthographic projection of the third electrode layer on the first dielectric layer is overlapped with the orthographic projection part of the second sub-electrode layer on the first dielectric layer. The third electrode layer, the first dielectric layer and the second sub-electrode layer form a third structural capacitance.

The second structure capacitor and the third structure capacitor in the magnetic field enhancement component provided by the embodiment of the application are connected through the first connecting layer to form a resonant circuit. The magnetic field enhancement component covers the detection part and enhances the magnetic field of the feedback signal of the detection part in a resonance mode. In the magnetic field enhancement component provided by the embodiment of the application, the width of the first sub-electrode layer is equal to the width of the second sub-electrode layer, and the width of the first connecting layer is smaller than the width of the first sub-electrode layer. The area of the detection part covered by the first electrode layer is reduced, the shielding effect of the first electrode layer is weakened, the transmission capability of feedback signals is enhanced, the signal quality is improved, and the image quality formed after the signals are processed is improved.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments or the conventional techniques of the present application, the drawings required for the descriptions of the embodiments or the conventional techniques will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to the drawings without inventive effort for those skilled in the art.

FIG. 1 is a side cross-sectional view of the magnetic field enhancement assembly provided in one embodiment of the present application;

FIG. 2 is a top view of the magnetic field enhancement assembly provided in one embodiment of the present application;

FIG. 3 is a schematic diagram of the magnetic field enhancement assembly provided in another embodiment of the present application;

FIG. 4 is a schematic diagram of the magnetic field enhancement assembly provided in another embodiment of the present application;

FIG. 5 is a schematic diagram of the magnetic field enhancement assembly provided in another embodiment of the present application;

FIG. 6 is a schematic diagram of the magnetic field enhancement assembly provided in another embodiment of the present application;

FIG. 7 is a schematic view of the magnetic field enhancement assembly provided in another embodiment of the present application;

FIG. 8 is a schematic diagram of the magnetic field enhancement assembly provided in another embodiment of the present application;

FIG. 9 is a graph of magnetic field strength of a circuit in which the magnetic field enhancement assembly is provided in another embodiment of the present application;

FIG. 10 is a graph showing the effect of the loop of the magnetic field enhancement assembly according to another embodiment of the present application;

FIG. 11 is a schematic diagram of the structure of the magnetic field enhancement device according to another embodiment of the present application;

FIG. 12 is a schematic diagram of the structure of the magnetic field enhancement device provided in another embodiment of the present application;

FIG. 13 is a schematic diagram of the magnetic field enhancement device provided in another embodiment of the present application;

FIG. 14 is a schematic diagram of the structure of the magnetic field enhancement device provided in another embodiment of the present application;

FIG. 15 is a schematic view of the structure of the magnetic field enhancement device according to another embodiment of the present application;

FIG. 16 is a schematic diagram of the structure of the magnetic field enhancement device provided in another embodiment of the present application;

FIG. 17 is an exploded view of the structure of the magnetic field enhancement device provided in another embodiment of the present application;

FIG. 18 is a graph of magnetic field strength versus time provided in another embodiment of the present application;

FIG. 19 is a schematic view of the structure of the magnetic field enhancement device provided in another embodiment of the present application;

Fig. 20 is an exploded view of the structure of the magnetic field enhancement device provided in another embodiment of the present application.

Reference numerals:

A magnetic field enhancing assembly 10; a first dielectric layer 100; a first surface 101; a second surface 102; a first end 103; a second end 104; a first electrode layer 110; a first sub-electrode layer 111; a second sub-electrode layer 112; a second electrode layer 120; a third electrode layer 130; a first connection layer 190; a second connection layer 191; a second direction a; a first direction b; a second structural capacitance 302; a third structure capacitance 303; a second resonance adjusting circuit 410; a switch control circuit 430; a first diode 431; a second diode 432; an external capacitor 440; a third external capacitor 443; a fourth control circuit 600; a first depletion MOS tube 231; a second depletion MOS transistor; 232; a seventh control circuit 630; a third capacitor 223; a first inductor 241; a first switch circuit 631; a third diode 213; a fourth diode 214; a fifth external capacitor 445;

a magnetic field enhancing device 20; a cylindrical support structure 50; a third end 51; a fourth end 53; a first annular conductive sheet 510; a second annular conductive sheet 520; a fixed structure 930; a first fixing member 931; a second fixed member 932; a control connection port 513; a first connection end 511; a second connection end 512.

Detailed Description

In order that the above objects, features and advantages of the application will be readily understood, a more particular description of the application will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. The application may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit or scope of the application, which is therefore not limited to the specific embodiments disclosed below.

The numbering of the components itself, e.g. "first", "second", etc., is used herein only to divide the objects described, and does not have any sequential or technical meaning. The term "coupled" as used herein includes both direct and indirect coupling (coupling), unless otherwise indicated. In the description of the present application, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element in question must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application.

In the present application, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.

Referring to fig. 1 and 2, a magnetic field enhancement assembly 10 is provided according to an embodiment of the present application, which includes a first dielectric layer 100, a first electrode layer 110, a second electrode layer 120, and a third electrode layer 130. The first dielectric layer 100 has opposite first and second ends 103, 104. The first dielectric layer 100 further includes opposing first and second surfaces 101, 102.

The first electrode layer 110 is disposed on the first surface 101. The first electrode layer 110 extends along the first end 103 towards the second end 104. The first electrode layer 110 includes a first sub-electrode layer 111, a second sub-electrode layer 112, and a first connection layer 190. The first sub-electrode layer 111 and the second sub-electrode layer 112 have the same width. The first sub-electrode layer 111 and the second sub-electrode layer 112 are disposed at a relative interval. One end of the first connection layer 190 is connected to the first sub-electrode layer 111. The other end of the first connection layer 190 is connected to the second sub-electrode layer 112. The width of the first connection layer 190 is smaller than the width of the first sub-electrode layer 111 or the second sub-electrode layer 112.

The second electrode layer 120 and the third electrode layer 130 are disposed on the second surface 102 at opposite intervals. The orthographic projection of the second electrode layer 120 on the first dielectric layer 100 overlaps with the orthographic projection of the first sub-electrode layer 111 on the first dielectric layer 100. The second electrode layer 120, the first dielectric layer 100 and the first sub-electrode layer 111 constitute a second structural capacitance 302. The orthographic projection of the third electrode layer 130 on the first dielectric layer 100 overlaps the orthographic projection of the second sub-electrode layer 112 on the first dielectric layer 100. The third electrode layer 130, the first dielectric layer 100 and the second sub-electrode layer 112 constitute a third structural capacitance 303.

The second structural capacitor 302 and the third structural capacitor 303 are connected through the first connection layer 190 to form a resonant circuit. When the device where the magnetic field enhancing component 10 is located covers the detection part, the magnetic field of the feedback signal of the detection part is enhanced in a resonance mode. In the magnetic field enhancement assembly 10 according to the embodiment of the present application, the width of the first connection layer 190 is smaller than the width of the first sub-electrode layer 111. The area of the detection portion covered by the first electrode layer 110 is reduced, the shielding effect of the first electrode layer 110 is reduced, and the transmission capability of the feedback signal is enhanced. The radio frequency coil is easier to receive feedback signals, so that the quality of the received signals is improved, and the quality of images formed after the signals are processed is improved.

Furthermore, the magnetic field enhancement assembly 10 is a super-structured surface array element assembly that reduces coupling effects. When a plurality of super-structure surface array unit assemblies are matched for use, the relative overlapping area between the first connection layers 190 in different super-structure surface array unit assemblies is reduced, the stray capacitance formed by the first connection layers 190 in different super-structure surface array unit assemblies and air is reduced, the coupling effect is reduced, and the signal quality is improved.

The first dielectric layer 100 may function to support the first electrode layer 110, the second electrode layer 120, and the third electrode layer 130. The first dielectric layer 100 may be an insulating material. The first dielectric layer 100 may have a rectangular plate-like structure. The first dielectric layer 100 may be an insulating material. In one embodiment, the material of the first dielectric layer 100 may be a glass fiber epoxy plate. The materials of the first electrode layer 110, the second electrode layer 120, and the third electrode layer 130 may be composed of conductive non-magnetic materials. In one embodiment, the materials of the first electrode layer 110, the second electrode layer 120, and the third electrode layer 130 may be metal materials such as gold, silver, copper, and the like. The first electrode layer 110, the second electrode layer 120 and the third electrode layer 130 formed of the above materials have good conductive properties and are easy to manufacture.

In one embodiment, the first sub-electrode layer 111, the second sub-electrode layer 112 and the first connection layer 190 are laid on the same layer, which reduces the process and improves the working efficiency.

In one embodiment, the length and width of the first sub-electrode layer 111 and the second sub-electrode layer 112 are the same. The front projection of the second electrode layer 120 on the first dielectric layer 100 overlaps the front projection of the first sub-electrode layer 111 on the first dielectric layer 100. The orthographic projection of the third electrode layer 130 on the first dielectric layer 100 overlaps the orthographic projection of the second sub-electrode layer 112 on the first dielectric layer 100. The second structure capacitor 302 and the third structure capacitor 303 have the same capacitance and the same capacitance value. The magnetic field enhancing assembly 10 has a high degree of symmetry. The loop in which the magnetic field enhancement assembly 10 is located has a better enhancement effect on the magnetic field of the feedback signal. The enhanced feedback signal magnetic field has higher uniformity, so that the feedback signal has higher quality.

In one embodiment, the length of the first dielectric layer 100 ranges from 200 millimeters to 300 millimeters. In one embodiment, the first dielectric layer 100 has a length of 250 millimeters. The first dielectric layer 100 has a width of 10 mm to 30 mm. In one embodiment, the width of the first dielectric layer 100 is 15 millimeters. In one embodiment, the first dielectric layer 100 has a thickness of 0.2 mm to 2 mm. In one embodiment, the thickness of the first dielectric layer 100 is 0.51 millimeters.

The direction from the first end 103 to the second end 104 is a first direction b. The first direction a is perpendicular to the second direction b. The width direction of the second sub-electrode layer 112 is the second direction a.

In one embodiment, the electrical loss of the first connection layer 190 is less than 1/2 of the overall electrical loss of the magnetic field enhancement assembly 10. The first connection layer 190 has a smaller electrical loss, and the magnetic field enhancement assembly 10 has a smaller heating value. The energy of the loop in which the magnetic field enhancing component 10 is located is mainly used for generating a magnetic field, and the enhancing effect of the magnetic field in the receiving stage is better.

In one embodiment, the width of the first connection layer 190 is 1/5 to 1/2 of the width of the first sub-electrode layer 111. The width of the first connection layer 190 is 1/5 to 1/2 of the width of the first sub-electrode layer 111, so that the electrical loss of the first connection layer 190 in the magnetic field enhancement assembly 10 can be ensured to be less than 1/2 of the overall electrical loss. The first connection layer 190 has a smaller electrical loss, and the magnetic field enhancement assembly 10 generates a smaller amount of heat. The energy of the magnetic field enhancing component 10 is mainly used for generating a magnetic field, and the enhancing effect of the magnetic field in the receiving stage is good.

In one embodiment, the widths of the first sub-electrode layer 111 and the second sub-electrode layer 112 are 1mm to 30 mm. The first connection layer 190 is 1mm to 15 mm. In one embodiment, the width of the first sub-electrode layer 111 and the second sub-electrode layer 112 is 15 mm, and the width of the first connection layer 190 is 4 mm.

Referring to fig. 3, in one embodiment, an included angle between the extending direction of the first connection layer 190 and the first direction b is an acute angle or an obtuse angle. The first direction b is directed from the first end 103 to the second end 104. When the magnetic field enhancing means 20 comprises a cylindrical support structure 50, a first annular conductive sheet 510, a second annular conductive sheet 520 and a plurality of said magnetic field enhancing assemblies 10. When the cylindrical support structure 50 is a cylindrical structure, the plurality of magnetic field enhancement assemblies 10 are disposed in parallel with each other at intervals on the cylindrical support structure 50. A plurality of the magnetic field enhancement assemblies 10 are connected in parallel. In the magnetic field enhancement device 20, the first connection layers 190 in the two opposing magnetic field enhancement modules 10 are staggered, and the parallel overlapping portions are reduced. The stray capacitance formed by the first connection layer 190 and air in the two opposing magnetic field enhancement assemblies 10 is reduced, the coupling effect is reduced, and the signal quality is improved.

Referring to fig. 4, in one embodiment, an arc chamfer is disposed at the intersection of the sidewall of the first connection layer 190 and the sidewall of the first sub-electrode layer 111 or the second sub-electrode 112. The current flows through the first sub-electrode layer 111, the first connection layer 190, and the second sub-electrode layer 112. The width of the first connection layer 190 is smaller than the width of the first sub-electrode layer 112. The current is collected at the junction of the first sub-electrode layer 111 and the first connection layer 190, and the current density increases. The intersection of the side wall of the first connection layer 190 and the side wall of the first sub-electrode layer 111 is provided with an arc chamfer, so that the first connection layer 190 and the first sub-electrode layer 111 are connected through a horn structure, abrupt change of current density is slowed down, and current density at the intersection of the side wall of the first connection layer 190 and the side wall of the first sub-electrode layer 111 is reduced. The current density at the junction of the first connection layer 190 and the first sub-electrode layer 111 is reduced, the heating value is reduced, and the service life of the magnetic field enhancing assembly 10 is prolonged.

The current is collected at the junction of the second sub-electrode layer 112 and the first connection layer 190, and the current density increases. An arc chamfer is disposed at the intersection of the sidewall of the first connection layer 190 and the sidewall of the second sub-electrode layer 112, so that a horn structure is formed at the connection of the first connection layer 190 and the second sub-electrode layer 112. The horn structure formed at the junction of the first connection layer 190 and the second sub-electrode layer 112 can slow down abrupt change of current density, so as to reduce current density at the intersection of the sidewall of the first connection layer 190 and the sidewall of the second sub-electrode layer 112. The current density at the junction of the second sub-electrode layer 112 and the first connection layer 190 is reduced, so that the heating value is reduced, and the service life of the magnetic field enhancing assembly 10 is prolonged.

Referring to fig. 5, in one embodiment, the first electrode layer 110 further includes a second connection layer 191. The width of the second connection layer 191 is smaller than the width of the first sub-electrode layer 111. The second connection layer 191 is disposed on the first surface 101. The second connection layer 191 is disposed in parallel with the first connection layer 190 at a distance, and the first connection layer 190 and the second connection layer 191 are connected in parallel between the first sub-electrode layer 111 and the second sub-electrode layer 112. The first connection layer 190 and the second connection layer 191 are connected in parallel, so that the current density flowing through the first connection layer 190 and the second connection layer 191 can be reduced, and the amount of heat generation can be reduced. The magnetic field enhancement assembly 10 adopts a plurality of connection layers, so that the uniformity of the distribution of the magnetic field of the connection layers in the width direction can be improved, and the uniformity of the enhancement effect of the magnetic field enhancement assembly 10 on the magnetic field of the feedback signal in the width direction of the connection layers is further improved, and the signal quality is improved.

In one embodiment, the extending direction of the first connection layer 190 and the extending direction of the second connection layer 191 form an acute angle or an obtuse angle. When a plurality of the magnetic field enhancement assemblies 10 are distributed in the cylindrical support structure 50 in a circular array, the first connection layers 190 and the second connection layers 191 of the two opposite magnetic field enhancement assemblies 10 are all staggered, and the parallel overlapping portions are reduced. The stray capacitance formed by the first connection layer 190 and air in the two opposite magnetic field enhancement assemblies 10 is reduced, the stray capacitance formed by the second connection layer 191 and air is reduced, the coupling effect is reduced, and the signal quality is improved.

In one embodiment, the extending direction of the first connection layer 190 is asymmetrically arranged with respect to the second connection layer 191. It is understood that the angle between the extending direction of the first connection layer 190 and the second direction b is not equal to the angle between the extending direction of the first connection layer 190 and the second direction b. When a plurality of the magnetic field enhancement assemblies 10 are arranged in parallel in a cylindrical structure, the first connection layers 190 in the magnetic field enhancement assemblies 10 are staggered with the second connection layers 191 in the other magnetic field enhancement assemblies 10, and the parallel overlapping portions are reduced. The stray capacitance formed by the first connection layer 190 in the magnetic field enhancement assembly 10, the second connection layer 191 in the other magnetic field enhancement assemblies 10, and air is reduced, the coupling effect is further reduced, and the signal quality is further improved.

Referring to fig. 6, in one embodiment, the first electrode layer 110 further includes a second connection layer 191. The second connection layer 191 is disposed on the first surface 101. The width of the second connection layer 191 is smaller than the width of the first sub-electrode layer 111. The first sub-electrode layer 111, the first connection layer 190, the second connection layer 191, and the second sub-electrode layer 112 are sequentially arranged along a direction in which the first dielectric layer 100 extends. The first connection layer 190 is spaced apart from the second connection layer 191. The first connection layer 190 is connected to the first sub-electrode layer 111. The second connection layer 191 is connected to the second sub-electrode layer 112. The magnetic field enhancement assembly 10 further includes a second resonant adjustment circuit 410. One end of the second resonance adjusting circuit 410 is connected to the first connection layer 190. The other end of the second resonance adjusting circuit 410 is connected to the second connection layer 191. The second resonance adjustment circuit 410 is capable of adjusting the capacitance or resistance of the magnetic field enhancement assembly 10.

In one embodiment, the lengths and widths of the first connection layer 190 and the second connection layer 191 are the same, so as to improve the symmetry of the structure of the magnetic field enhancement assembly 10, further improve the uniformity of the enhancement effect of the magnetic field enhancement assembly 10 on the magnetic field of the feedback signal, and improve the quality of the collected feedback signal (detection signal).

In one embodiment, the second resonance adjusting circuit 410 may include a capacitor, one end of which is connected to the first connection layer 190, and the other end of which is connected to the second connection layer 191. The second resonance adjusting circuit 410 can reduce the voltage division of the second structure capacitor 302 and the third structure capacitor 303 by adding a capacitor, and can prevent the breakdown of the capacitor caused by the excessive voltage generated by electromagnetic induction.

Referring also to fig. 7, in one embodiment, the magnetic field enhancement assembly 10 further includes a switch control circuit 430. Both ends of the switch control circuit 430 are connected to the first sub-electrode layer 111 and the second electrode layer 120, respectively. The switch control circuit 430 is configured to be turned on during a radio frequency transmission phase and turned off during a radio frequency reception phase.

The switch control circuit 430 is connected in parallel with the second structural capacitance 302. Thus, during the rf emission phase, the switch control circuit 430 is turned on, and the first sub-electrode layer 111 and the second electrode layer 120 are electrically connected. In the rf receiving stage, the switch control circuit 430 is turned off, and the first sub-electrode layer 111 and the second electrode layer 120 are disconnected. The turn-on voltage of the switch control circuit 430 may be greater than 1 volt. That is, when the voltage difference between the first sub-electrode layer 111 and the second electrode layer is greater than 1 volt, the switch control circuit 430 is turned on. When the voltage difference between the first sub-electrode layer 111 and the second electrode layer 120 is less than 1 volt, the switch control circuit 430 is turned off.

During the rf transmission phase, the switch control circuit 430 is turned on due to the large voltage difference across the structure capacitance. The first sub-electrode layer 111 and the second electrode layer 120 are electrically connected. At this time, the first sub-electrode layer 111 and the second electrode layer 120 cannot form the second structural capacitor 302. I.e. the loop in which the magnetic field enhancing assembly 10 is located does not have resonance properties. Therefore, the loop in which the magnetic field enhancement assembly 10 is located cannot enhance the rf transmit field.

In the rf receiving stage, the voltage difference between the first sub-electrode layer 111 and the second electrode layer 120 is smaller, the switch control circuit 430 is turned off, and the first sub-electrode layer 111 and the second electrode layer are turned off. At this time, the first sub-electrode layer 111 and the second electrode layer 120 form the second structural capacitor 302. The magnetic field enhancing assembly 10 thus has a good resonant frequency during the radio frequency reception phase. The magnetic field enhancing assembly 10 has a nonlinear response characteristic. The loop in which the magnetic field enhancement assembly 10 is located can enhance the rf magnetic field formed by the feedback signal from the detection site.

Referring also to fig. 8, in one embodiment, the magnetic field enhancement assembly 10 further includes an external capacitor 440. Both ends of the external capacitor 440 are respectively connected to the first sub-electrode layer 111 and the second electrode layer 120. The external capacitor 440 may be a tunable capacitor connected in parallel with the first sub-electrode layer 111 and the second electrode layer 120. The external capacitor 440, in combination with the third structural capacitor 303, may adjust the resonance performance of the magnetic field enhancement assembly 10. In the rf receiving stage, the external capacitor 440 is connected in parallel with the third structural capacitor 303, and the external capacitor 440 is disposed at the first end 103, and the third structural capacitor 303 is disposed at the second end 104, so that the magnetic field of the magnetic field enhancing assembly 10 in the extending direction can be balanced, the uniformity of the magnetic field is improved, the uniformity of the enhancement degree of the rf magnetic field of the feedback signal is improved, and the quality of the detection signal is improved.

In one embodiment, the switch control circuit 430 includes a first diode 431 and a second diode 432. An anode of the first diode 431 is connected to the first sub-electrode layer 111. The cathode of the first diode 431 is connected to the second electrode layer 120. The cathode of the second diode 432 is connected to the first sub-electrode layer 111, and the anode of the second diode 432 is connected to the second electrode layer 120.

It is understood that the turn-on voltage of the first diode 431 and the second diode 432 may be between 0 volt and 1 volt. In one embodiment, the turn-on voltage of the first diode 431 and the second diode 432 may be 0.8V.

Referring to fig. 9, the ac characteristic of the rf is shown. The induced voltage generated by the first sub-electrode layer 111 and the second electrode layer 120 is also an alternating voltage. In the radio frequency emission phase, the turn-on voltage of the first diode 431 and the second diode 432 has been exceeded due to the voltage difference between the first sub-electrode layer 111 and the second electrode layer 120. Therefore, one of the first diode 431 and the second diode 432 is always in an on state, and the first sub-electrode layer 111 and the second electrode layer 120 are electrically connected, so that a capacitor structure is not formed. At this time, current flows through the first diode 431 or the second diode 432, and the external capacitor 440 is shorted. The first sub-electrode layer 111 and the second electrode layer 120 cannot constitute the third structural capacitance 303.

In the rf receiving stage, since the voltage difference between the first sub-electrode layer 111 and the second electrode layer 120 is smaller than the turn-on voltage of the first diode 431 and the second diode 432. Therefore, the first diode 431 and the second diode 432 are in a non-conductive state, and the first sub-electrode layer 111, the external capacitor 440 and the second electrode layer 120 are connected in series.

The change of the magnetic field intensity in the rf transmitting phase and the rf receiving phase changes the conducting state of the first diode 431 and the second diode 432, and thus changes the connection relationship between the elements of the magnetic field enhancing assembly 10, and changes the resonance performance of the LC oscillating circuit.

In one embodiment, the external capacitor 440 is an adjustable capacitor. In the rf receiving stage, the new energy of the circuit oscillation of the magnetic field enhancement assembly 10 can be changed by adjusting the capacitance value of the external capacitor 440, so as to change the resonant frequency of the loop formed by a plurality of magnetic field enhancement assemblies 10. Therefore, by adjusting the capacitance value of the external capacitor 440, the magnetic field enhancement assembly 10 can be adapted to magnetic resonance systems with different operating frequencies.

Referring also to fig. 10, a diagram of MRI image enhancement effects of a magnetic field enhancement assembly 10 according to the prior art and embodiments of the present application is provided.

A is a body coil commonly adopted by a magnetic resonance system, the image signal-to-noise ratio is very low, and the particle sensation is serious;

b when the magnetic field enhancing assembly 10 is not provided with the switch control circuit 430, a lot of artifacts appear in the formed image due to the magnetic field enhancing assembly 10 interfering with the radio frequency transmission field;

The magnetic field enhancement component 10 formed by the magnetic field enhancement component 10 provided by the embodiment of the application has high image signal to noise ratio, clear and fine image and no introduction of artifacts. Thus, the magnetic field enhancement assembly formed by the plurality of magnetic field enhancement assemblies 10 has better sequence versatility.

Referring also to fig. 11, in one embodiment, the magnetic field enhancement assembly 10 further includes a third external capacitor 443. The external capacitor 440 and the third external capacitor 443 are connected in series between the first sub-electrode layer 111 and the second electrode layer 120, and the switch control circuit 430 is connected in parallel to two ends of the external capacitor 440. The switch control circuit 430 is configured to be turned on during a radio frequency transmission phase and turned off during a radio frequency reception phase.

The external capacitor 440 and the third external capacitor 443 may be adjustable capacitors, and in the rf emission stage, the switch control circuit 430 is turned on due to the large voltage difference between the first sub-electrode layer 111 and the second electrode layer 120. The third external capacitor 443 is connected between the first sub-electrode layer 111 and the second electrode layer 120, and the detuning degree of the loop where the magnetic field enhancing component 10 is located in the radio frequency emission stage can be adjusted by adjusting the third external capacitor 443. I.e. the degree of detuning of the magnetic field enhancement component 10 during the radio frequency transmission phase, can be adjusted by the third external capacitance 443. The third external capacitor 443 can accurately adjust the magnetic field strength of the detected region in the loop formed by adding the magnetic field enhancement component 10 and the magnetic field strength before adding the magnetic field enhancement component 10, and at this time, the detected region maintains the original magnetic field strength, so that the influence of the loop where the magnetic field enhancement component 10 is located on the radio frequency emission stage can be eliminated, so that the loop where the magnetic field enhancement component 10 is located can be suitable for all clinical sequences, and the clinical practicability of the loop where the magnetic field enhancement component 10 is located is improved.

Referring also to FIG. 12, in one embodiment. The magnetic field enhancement assembly 10 further includes a fifth external capacitance 445. The fifth external capacitor 445 and the switch control circuit 430 are connected in series between the first sub-electrode layer 111 and the second sub-electrode layer 112. The circuit formed by the fifth external capacitor 445 and the switch control circuit 430 connected in series is connected in parallel with the external capacitor 440.

Therefore, when the switch control circuit 430 is turned on, the fifth external capacitor 445 and the external capacitor 440 are connected in parallel to the first sub-electrode layer 111 and the second sub-electrode layer 112. When the total capacitance of the magnetic field enhancement assembly 10 is equal, the capacitance of the fifth external capacitor 445 and the external capacitor 440 in parallel is greater than the capacitance of the two capacitors in series, so that the required capacitance of the second structure capacitor 302 and the third structure capacitor 303 can be smaller, and thus the loss of the magnetic field enhancement assembly 10 is reduced.

In the rf emission phase, the resonant frequency of the loop in which the magnetic field enhancing assembly 10 is located deviates from the operating frequency of the magnetic resonance system further, so that by adjusting the fifth external capacitor 445 and the external capacitor 440, it can be ensured that the magnetic field strength of the magnetic field enhancing assembly 10 is the same in the rf emission phase of the magnetic resonance system. It will be appreciated that the linear response characteristics of the magnetic field enhancing assembly 10 determine that it has the same resonant properties during both the rf transmit and rf receive phases.

In the rf emission phase, the voltage difference between the first sub-electrode layer 111 and the second sub-electrode layer 112 is larger, and the switch control circuit 430 is turned on. The external capacitor 440 and the fifth external capacitor 445 are connected in series between the first sub-electrode layer 111 and the second sub-electrode layer 112.

And in the rf receiving stage, the voltage difference between the first sub-electrode layer 111 and the second sub-electrode layer 112 is small, and the switch control circuit 430 is turned off. Only the external capacitor 440 is connected in series between the first sub-electrode layer 111 and the second sub-electrode layer 112. By adjusting the external capacitor 440, the resonant frequency of the loop in which the magnetic field enhancing component 10 is located can be adjusted, so that the resonant frequency is equal to the frequency of the rf coil, thereby greatly enhancing the rf receiving field and improving the image signal-to-noise ratio.

The circuit after the fifth external capacitor 445 and the external capacitor 440 are connected in parallel may be connected through the first connection layer 190 and the second connection layer 191.

By adjusting the external capacitor 440 and the fifth external capacitor 445, the loop in which the magnetic field enhancing component 10 is located can have a good resonant frequency during the rf receiving phase. Eventually, the resonance frequency of the loop in which the magnetic field enhancing assembly 10 is located reaches the operating frequency of the magnetic resonance system during the receiving phase.

Referring also to fig. 13, in one embodiment, the second resonant tank circuit 410 may be replaced by a fourth control circuit 600. The fourth control circuit 600 is connected between the first sub-electrode layer 111 and the second sub-electrode layer 112. One end of the fourth control circuit 600 is electrically connected to the first sub-electrode layer 111. The other end of the fourth control circuit 600 is electrically connected to the second sub-electrode layer 112. The fourth control circuit 600 is configured to control the first sub-electrode layer 111 and the second sub-electrode layer 112 to be disconnected during a radio frequency transmitting stage and connected during a radio frequency receiving stage. In the rf receiving stage, the fourth control circuit 600 connects the first sub-electrode layer 111 and the second sub-electrode layer 112 to form an LC oscillating circuit. In the rf receiving stage, the fourth control circuit 600 disconnects the first sub-electrode layer 111 from the second sub-electrode layer 112, and cannot form an LC oscillating circuit.

In one embodiment, the second resonance adjusting circuit 410 includes a first depletion MOS tube 231 and a second depletion MOS tube 232. The source of the first depletion MOS 231 is electrically connected to the second sub-electrode layer 112. The gate and the drain of the first depletion MOS tube 231 are electrically connected. The gate and the drain of the second depletion MOS transistor 232 are electrically connected, and are electrically connected to the gate and the drain of the first depletion MOS transistor 231. The source of the second depletion MOS transistor 232 is electrically connected to the first sub-electrode layer 111.

The first depletion MOS tube 231 is connected in series with the second depletion MOS tube 232. In the radio frequency transmitting stage, the radio frequency coil transmits radio frequency transmitting signals, and the field intensity of the magnetic field is larger. The induced voltage generated by the magnetic field enhancing assembly 10 is relatively large. The voltage between the first depletion MOS tube 231 and the second depletion MOS tube 232 exceeds the pinch-off voltage between the first depletion MOS tube 231 and the second depletion MOS tube 232, and the source-drain electrode of the first depletion MOS tube 231 is not conducted and the source-drain electrode of the second depletion MOS tube 232 is not conducted. Almost no current flows between the second structural capacitor 302 and the third structural capacitor 303, and the magnetic field generated by the magnetic field enhancing component 10 is weakened, so that the influence of the magnetic field enhancing component 10 on the magnetic field in the radio frequency emission stage is reduced, thereby reducing the artifact of the detected image and improving the definition of the detected image.

In the radio frequency receiving stage, the detection part transmits a feedback signal, and the field intensity of the magnetic field is smaller. The magnetic field enhancing assembly 10 produces a small induced voltage. The voltage between the first depletion MOS tube 231 and the second depletion MOS tube 232 is smaller than the pinch-off voltage between the first depletion MOS tube 231 and the second depletion MOS tube 232, and the source-drain electrode of the first depletion MOS tube 231 is conducted and the source-drain electrode of the second depletion MOS tube 232 is conducted. The second structure capacitor 302 and the third structure capacitor 303 are connected to form an LC circuit, so as to enhance the magnetic field.

Referring also to fig. 14, in one embodiment, the second resonance adjusting circuit 410 may be replaced by a seventh control circuit 630. The seventh control circuit 630 includes a third capacitor 223, a first inductor 241, and a first switch circuit 631. One end of the third capacitor 223 is connected to the first connection layer 190. The other end of the third capacitor 223 is connected to the second connection layer 191. One end of the first inductor 241 is connected to the second connection layer 191. The first switch circuit 631 is connected between the other end of the first inductor 241 and the first connection layer 190. The first switch circuit 631 is configured to be turned off during a radio frequency reception phase. The first switch circuit 631 is further configured to be turned on during a radio frequency transmission stage, so that the seventh control circuit 630 is in a high-impedance state.

The first switching circuit 631 in the magnetic field enhancing assembly 10 is configured to be turned off during a radio frequency receive phase. The second structure capacitor 302 and the third structure capacitor 303 are connected through the third capacitor 223. The first switching circuit 631 and the first inductor 241 do not participate in the circuit conduction. The first switch circuit 631 is further configured to be turned on during a radio frequency transmission stage, and the third capacitor 223 is connected in parallel with the first inductor 241, so that the seventh control circuit 630 is in a high-resistance state. The circuit is broken between the second structure capacitor 302 and the third structure capacitor 303. In the radio frequency emission stage, almost no current flows between the second structural capacitor 302 and the third structural capacitor 303, and the magnetic field generated by the loop where the magnetic field enhancing component 10 is located is weakened, so that the influence of the loop where the magnetic field enhancing component 10 is located on the magnetic field in the radio frequency signal emission stage is reduced, thereby reducing the artifact of the detected image and improving the definition of the detected image.

The first switching circuit 631 may be controlled by a control circuit. In one embodiment, the first switching circuit 631 includes a switching element and a control terminal. One end of the switching element is connected to one end of the first inductor 241 remote from the second connection layer 191. The other end of the switching element is connected to the first connection layer 190. The control end is connected with an external control device. The control terminal is used for receiving the closing and opening commands. And in the radio frequency transmitting stage, the control device outputs a closing command to the control end. When the control terminal receives a close command, the first inductor 241 is electrically connected to the first connection layer 190. The first inductor 241 is connected in parallel with the third capacitor 223, and generates parallel resonance, and is in a high-resistance state; almost no current flows between the first connection layer 190 and the second connection layer 191.

In the radio frequency receiving stage, the control device outputs a closing command to the control end. When the control terminal receives a disconnection command, the first inductor 241 is disconnected from the first connection layer 190. The first connection layer 190 and the third capacitor 223 are connected in series with the second connection layer 191, and form a part of a resonant circuit.

In one embodiment, the first switching circuit 631 includes a third diode 213 and a fourth diode 214. The anode of the third diode 213 is connected to the first connection layer 190. The cathode of the third diode 213 is connected to the other end of the first inductor 241. The anode of the fourth diode 214 is connected to the other end of the first inductor 241, and the cathode of the fourth diode 214 is connected to the first connection layer 190.

The third diode 213 and the fourth diode 214 are connected in anti-parallel. In the radio frequency transmitting stage, the radio frequency coil transmits radio frequency transmitting signals, and the field intensity of the magnetic field is larger. The induced voltage generated by the magnetic field enhancing assembly 10 is relatively large. The voltages applied across the third diode 213 and the fourth diode 214 alternate in opposite directions. The applied voltage exceeds the turn-on voltage of the third diode 213 and the fourth diode 214, and the third diode 213 and the fourth diode 214 are turned on. The third capacitor 223 is connected in parallel with the first inductor 241, so that the seventh control circuit 630 is in a high-resistance state. In the radio frequency signal transmitting stage, almost no current flows between the second structural capacitor 302 and the third structural capacitor 303, and the magnetic field generated by the loop where the magnetic field enhancing component 10 is located is weakened, so that the influence of the loop where the magnetic field enhancing component 10 is located on the magnetic field in the radio frequency signal transmitting stage is reduced, thereby reducing the artifact of the detected image and improving the definition of the detected image.

In the radio frequency receiving stage, the detection part transmits a feedback signal, and the field intensity of the magnetic field is smaller. The magnetic field enhancing assembly 10 produces a small induced voltage. The applied voltage cannot reach the turn-on voltage of the third diode 213 and the fourth diode 214, and the third diode 213 and the fourth diode 214 are not turned on. The second structure capacitor 302 and the third structure capacitor 303 are connected through the third capacitor 223, and the magnetic field enhancement device 20 formed by the magnetic field enhancement assemblies 10 is in a resonance state, so as to play a role in enhancing a magnetic field.

In one embodiment, the turn-on voltages of the third diode 213 and the fourth diode 214 are each between 0 and 1V. In one embodiment, the turn-on voltages of the third diode 213 and the fourth diode 214 are the same, so that the magnetic field strength is continuously increased during the rf receiving phase of the magnetic field enhancement device 20, and the stability of the feedback signal is improved. In one embodiment, the turn-on voltage of the third diode 213 and the fourth diode 214 is 0.8V.

In one embodiment, the third diode 213 and the fourth diode 214 have the same model, and the voltage drops after the third diode 213 and the fourth diode 214 are turned on are the same, so that the magnetic field strength of the magnetic field enhancement device 20 is increased by the same magnitude in the radio frequency receiving stage, and the stability of the feedback signal is further improved.

Referring to fig. 15, in one embodiment, the first connection layer 190 is used to form a structural inductor, instead of the first inductor 241. The connection relationship of the seventh control circuit 630 is: one end of the third capacitor 223 is connected to one end of the first connection layer 190 near the first sub-electrode layer 111. The other end of the third capacitor 223 is connected to the second connection layer 191. The first switch circuit 631 is connected between an end of the first connection layer 190 remote from the first sub-electrode layer 111 and the second connection layer 191. The first connection layer 190 is used to form a structural inductor, so that no external inductor is needed, and the cost is saved.

Referring to fig. 16 and 17, an embodiment of the present application provides a magnetic field enhancement device 20 comprising a cylindrical support structure 50, a plurality of magnetic field enhancement assemblies 10, a first annular conductive sheet 510 and a second annular conductive sheet 520. The cylindrical support structure 50 has two spaced-apart opposed third and fourth ends 51, 53. The cylindrical support structure 50 encloses a detection space. The plurality of magnetic field enhancing assemblies 10 are disposed in spaced relation to the cylindrical support structure 50. A plurality of the magnetic field enhancement assemblies 10 each extend along the third end 51 toward the fourth end 53. The first sub-electrode layer 111 and the second electrode layer 120 are arranged near the first end 103. The second sub-electrode layer 112 and the third electrode layer 130 are disposed proximate the second end 104. The first annular conductive sheet 510 is disposed on the cylindrical support structure 50 and is adjacent to the third end 51. The first annular conductive sheet 510 is electrically connected to the second electrode layers 120 of the plurality of magnetic field enhancement assemblies 10. The second annular conductive tab 520 is disposed on the cylindrical support structure 50 proximate the fourth end 53. The second annular conductive sheet 520 is electrically connected to the third electrode layers 130 of the plurality of magnetic field enhancement assemblies 10.

The magnetic field enhancing assembly 10 is the magnetic field enhancing assembly 10 of any of the embodiments described above. The first connection layers 190 of the magnetic field enhancement assemblies 10 in the magnetic field enhancement device 20 provided in the embodiment of the present application are connected in parallel through the second annular conductive sheet 520 to form an LC oscillating circuit. The resonance frequency of the magnetic field enhancement device 20 is equal to the target resonance frequency, and the feedback signal of the detection part can be enhanced. The magnetic field enhancement device 20 covers the detection portion, and the first electrode layer 110, the second electrode layer 120 and the third electrode layer 130 cover the detection portion to form a shielding layer, so as to affect the transmission of the feedback signal to the radio frequency coil. The width of the first connection layer 190 in the magnetic field enhancement device 20 provided in the embodiment of the present application is smaller than the width of the first sub-electrode layer 111. The area of the detection portion covered by the first electrode layer 110 is reduced, the shielding effect of the first electrode layer 110 is reduced, and the transmission capability of the feedback signal is enhanced. The radio frequency coil is easier to receive feedback signals, so that the quality of the received signals is improved, and the quality of images formed after the signals are processed is improved.

Furthermore, a plurality of the magnetic field enhancing assemblies 10 are distributed in a circular array over the cylindrical support structure 50. The cylindrical support structure 50 has symmetrical structure, uniform magnetic field distribution and consistent enhancement effect on the feedback signal. The magnetic field enhancement device 20 can be sleeved on the arm, leg, hand or other parts of the human body, and is closer to the detection part, thereby improving the detection sensitivity.

The cylindrical support structure 50 may be replaced with a flat support structure or a curved support structure. The first annular conductive sheet 510 and the second annular conductive sheet 520 may be replaced with linear conductive sheets or curved conductive sheets to accommodate flat support structures or curved support structures.

Referring to fig. 18, the solid line in the drawing shows the magnetic field intensity variation curves of the magnetic field enhancement device in the prior art at different frequencies. The dashed lines represent the magnetic field strength profile of the magnetic field enhancement device 20 of the present application at different frequencies. The magnetic field strength of the magnetic field enhancing device 20 of the present application is greater than that of the prior art magnetic field enhancing device at the same resonant frequency. Therefore, the magnetic field strength of the feedback signal can be greatly improved by the magnetic field enhancement device 20 in the application, the radio frequency coil can more easily receive the feedback signal, and the quality of the received signal is improved, and the quality of the image formed by the processed signal is improved.

In one embodiment, the extending direction of the first connection layer 190 forms an acute angle or an obtuse angle with the first direction b. The first direction b is directed from the first end 103 to the second end 104. A plurality of the magnetic field enhancement assemblies 10 are disposed in spaced parallel relationship to the cylindrical support structure 50. A plurality of the magnetic field enhancement assemblies 10 are connected in parallel. In the magnetic field enhancement device 20, the first connection layers 190 in the two opposing magnetic field enhancement modules 10 are staggered, and the parallel overlapping portions are reduced. The stray capacitance formed by the first connection layer 190 and air in the two opposing magnetic field enhancement assemblies 10 is reduced, the coupling effect is reduced, and the signal quality is improved.

In one embodiment, the magnetic field enhancing device 20 further comprises a plurality of fixation structures 930. The plurality of fixing structures 930 are disposed on the outer surface of the cylindrical supporting structure 50 and are arranged in a circular array. A plurality of the fixing structures 930 are used to fix the magnetic field enhancement assemblies 10 one by one. The magnetic field enhancing assembly 10 may be secured to the cylindrical support structure 50 by the securing structure 930.

The fixing structure 930 may be a strap, a buckle, or the like. The magnetic field enhancing assembly 10 is removably secured to the cylindrical support structure 50 by the securing structure 930.

In one embodiment, the securing structure 930 includes first and second securing members 931, 932 that are spaced apart. The first fixing member 931 is disposed near the third end 51. The second securing member 932 is disposed adjacent the fourth end 53. The first fixing member 931 is used to fix one end of the magnetic field enhancement assembly 10. The second fixing member 932 is configured to fix the other end of the magnetic field enhancement assembly 10. The first fixing member 931 and the second fixing member 932 are respectively used to fix two ends of the magnetic field enhancement assembly 10.

In one embodiment, the first fixing member 931 and the second fixing member 932 include a U-shaped buckle. The first fixing member 931 and the second fixing member 932 are fastened to the outer surface of the cylindrical support structure 50. The openings of the U-shaped spaces of the first fixing member 931 and the second fixing member 932 are directed toward the third end 51 or the fourth end 53. The U-shaped spaces of the first mount 931 and the second mount 932 are configured to penetrate the magnetic field enhancement assembly 10. If the magnetic field enhancement assembly 10 needs to be replaced, only the magnetic field enhancement assembly 10 needs to be drawn out of or inserted into the U-shaped spaces of the first fixing member 931 and the second fixing member 932.

Referring to fig. 19 and 20, in one embodiment, the first annular conductive sheet 510 includes a control connection port 513. The control connection port 513 includes a first connection end 511 and a second connection end 512. The first connection terminal 511 and the second connection terminal 512 are connected to the third electrode layers 130 of the adjacent two magnetic field enhancement assemblies 10, respectively. The seventh control circuit 630 is connected between the first connection terminal 511 and the second connection terminal 512. It will be appreciated that one end of the third capacitor 223 is connected to the first connection terminal 511. The other end of the third capacitor 223 is connected to the second connection terminal 512. One end of the first inductor 241 is connected to the first connection terminal 511. The first switch circuit 631 is connected between the other end of the first inductor 241 and the second connection terminal 512. The first switch circuit 631 is configured to be turned off during a radio frequency reception phase. The first switch circuit 631 is further configured to be turned on during a radio frequency transmission stage, so that the seventh control circuit 630 is in a high-impedance state.

And is disconnected during the radio frequency reception phase. The first switching circuit 631 is turned off. The first connection terminal 511 and the second connection terminal 512 are connected through the third capacitor 223. The first switching circuit 631 and the first inductor 241 do not participate in the circuit conduction. The magnetic field enhancing device 20 and the detection part emit feedback signals at the same frequency, and the magnetic field enhancing device 20 resonates to enhance the magnetic field strength of the feedback signals.

During the rf signal transmission stage, the first switch circuit 631 is turned on, and the third capacitor 223 is connected in parallel with the first inductor 241, so that the seventh control circuit 630 is in a high-resistance state. The circuit is broken between the first connection terminal 511 and the second connection terminal 512. The connection relation of the elements in the magnetic field enhancement device 20 changes and the resonance frequency changes. The resonance frequency of the magnetic field enhancement device 20 is not equal to the target frequency, and the magnetic field enhancement device 20 does not have the effect of enhancing the magnetic field, so that the artifact of the detected image is reduced, and the definition of the detected image is improved.

In one embodiment, the first annular conductive sheet 510 includes a plurality of the control connection ports 513 and a plurality of the seventh control circuits 630 arranged at intervals. Both ends of each control connection port 513 are respectively connected to the third electrode layers 130 of the two adjacent magnetic field enhancement assemblies 10. Each control connection port 513 is connected to one seventh control circuit 630, so as to cut off the current between two adjacent magnetic field enhancement assemblies 10 during the transmission stage, and reduce the influence of the induced current between two adjacent magnetic field enhancement assemblies 10 on the radio frequency magnetic field during the transmission stage.

The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.

The examples described above represent only a few embodiments of the present application and are not to be construed as limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.

Claims

1. A magnetic field enhancing assembly, comprising:

A first dielectric layer (100) having opposite first (103) and second (104) ends and comprising opposite first (101) and second (102) surfaces;

The first electrode layer (110) is arranged on the first surface (101) and extends towards the second end (104) along the first end (103), the first electrode layer (110) comprises a first sub-electrode layer (111), a second sub-electrode layer (112) and a first connecting layer (190), the widths of the first sub-electrode layer (111) and the second sub-electrode layer (112) are the same and are arranged at opposite intervals, one end of the first connecting layer (190) is connected with the first sub-electrode layer (111), the other end of the first connecting layer (190) is connected with the second sub-electrode layer (112), and the width of the first connecting layer (190) is smaller than that of the first sub-electrode layer (111); the first electrode layer (110) further comprises a second connecting layer (191), the second connecting layer (191) is arranged on the first surface (101), the width of the second connecting layer (191) is smaller than that of the first sub-electrode layer (111), the second connecting layer (191) and the first connecting layer (190) are arranged at intervals in parallel, and the first connecting layer (190) and the second connecting layer (191) are connected between the first sub-electrode layer (111) and the second sub-electrode layer (112) in parallel, and an included angle between the extending direction of the first connecting layer (190) and the extending direction of the second connecting layer (191) is an acute angle or an obtuse angle;

The second electrode layer (120) and the third electrode layer (130) are oppositely arranged on the second surface (102) at intervals, the orthographic projection of the second electrode layer (120) on the first dielectric layer (100) is overlapped with the orthographic projection of the first sub-electrode layer (111) on the first dielectric layer (100), the second electrode layer (120), the first dielectric layer (100) and the first sub-electrode layer (111) form a second structural capacitor (302), the orthographic projection of the third electrode layer (130) on the first dielectric layer (100) is overlapped with the orthographic projection of the second sub-electrode layer (112) on the first dielectric layer (100), and the third electrode layer (130), the first dielectric layer (100) and the second sub-electrode layer (112) form a third structural capacitor (303).

2. The magnetic field enhancement assembly of claim 1, wherein the width of the first connection layer (190) is 1/5 to 1/2 of the width of the first sub-electrode layer (111).

3. The magnetic field enhancement assembly of claim 1, wherein the first connection layer (190) extends at an acute or obtuse angle to a first direction that is directed from the first end (103) to the second end (104).

4. The magnetic field enhancement assembly of claim 1, wherein the intersection of the sidewall of the first connection layer (190) and the sidewall of the first sub-electrode layer (111) is provided as an arc chamfer.

5. The magnetic field enhancement assembly of claim 1, wherein the first electrode layer (110) further comprises a second connection layer (191), the second connection layer (191) being disposed on the first surface (101), the second connection layer (191) having a width smaller than a width of the first sub-electrode layer (111), the first connection layer (190), the second connection layer (191) and the second sub-electrode layer (112) being sequentially arranged along a direction in which the first dielectric layer (100) extends, the second connection layer (191) being connected to the second sub-electrode layer (112);

The magnetic field enhancement assembly (10) further comprises a second resonance adjusting circuit (410), one end of the second resonance adjusting circuit (410) is connected with the first connecting layer (190), and the other end of the second resonance adjusting circuit (410) is connected with the second connecting layer (191).

6. The magnetic field enhancement assembly of claim 5, wherein the second resonant adjustment circuit (410) comprises a capacitor having one end connected to the first connection layer (190) and the other end connected to the second connection layer (191).

7. The magnetic field enhancement assembly of claim 5, further comprising a switch control circuit (430); the two ends of the switch control circuit (430) are respectively connected with the first sub-electrode layer (111) and the second electrode layer (120), and the switch control circuit (430) is used for being conducted in a radio frequency transmitting stage and disconnected in a radio frequency receiving stage.

8. The magnetic field enhancement assembly of claim 7, wherein the switch control circuit (430) includes a first diode (431) and a second diode (432), an anode of the first diode (431) being connected to the first sub-electrode layer (111), a cathode of the first diode (431) being connected to the second electrode layer (120), a cathode of the second diode (432) being connected to the first sub-electrode layer (111), an anode of the second diode (432) being connected to the second electrode layer (120).

9. The magnetic field enhancement assembly of claim 5, wherein the second resonance adjustment circuit (410) comprises a first depletion MOS (231) and a second depletion MOS (232), a source of the first depletion MOS (231) being electrically connected to the second sub-electrode layer (112), a gate and a drain of the first depletion MOS (231) being electrically connected, a gate and a drain of the second depletion MOS (232) being electrically connected, and a gate and a drain of the first depletion MOS (231), a source of the second depletion MOS (232) being electrically connected to the first sub-electrode layer (111).

10. A magnetic field enhancing device, comprising:

a cylindrical support structure (50) having two spaced-apart opposed third (51) and fourth (53) ends;

A plurality of magnetic field enhancement assemblies (10), the interval set up in cylindric bearing structure (50), a plurality of magnetic field enhancement assemblies (10) all follow third end (51) to fourth end (53), magnetic field enhancement assembly (10) include:

The first electrode layer (110) is arranged on the first surface (101) and extends towards the second end (104) along the first end (103), the first electrode layer (110) comprises a first sub-electrode layer (111), a second sub-electrode layer (112) and a first connecting layer (190), the widths of the first sub-electrode layer (111) and the second sub-electrode layer (112) are the same and are arranged at opposite intervals, the first sub-electrode layer (111) is arranged close to the first end (103), the second sub-electrode layer (112) is arranged close to the second end (104), one end of the first connecting layer (190) is connected with the first sub-electrode layer (111), the other end of the first connecting layer (190) is connected with the second sub-electrode layer (112), and the width of the first connecting layer (190) is smaller than that of the first sub-electrode layer (111); the first electrode layer (110) further comprises a second connecting layer (191), the second connecting layer (191) is arranged on the first surface (101), the width of the second connecting layer (191) is smaller than that of the first sub-electrode layer (111), the second connecting layer (191) and the first connecting layer (190) are arranged at intervals in parallel, and the first connecting layer (190) and the second connecting layer (191) are connected between the first sub-electrode layer (111) and the second sub-electrode layer (112) in parallel, and an included angle between the extending direction of the first connecting layer (190) and the extending direction of the second connecting layer (191) is an acute angle or an obtuse angle;

A second electrode layer (120) and a third electrode layer (130) are oppositely arranged on the second surface (102) at intervals, the orthographic projection of the second electrode layer (120) on the first dielectric layer (100) is overlapped with the orthographic projection of the first sub-electrode layer (111) on the first dielectric layer (100), the second electrode layer (120), the first dielectric layer (100) and the first sub-electrode layer (111) form a second structural capacitor (302), the orthographic projection of the third electrode layer (130) on the first dielectric layer (100) is overlapped with the orthographic projection of the second sub-electrode layer (112) on the first dielectric layer (100), and the third electrode layer (130), the first dielectric layer (100) and the second sub-electrode layer (112) form a third structural capacitor (303);

a first annular conductive sheet (510) disposed on the cylindrical support structure (50) and proximate the third end (51); the first annular conductive sheet (510) is electrically connected to the second electrode layers (120) of a plurality of the magnetic field enhancement assemblies (10); and

And a second annular conductive sheet (520) disposed on the cylindrical support structure (50) and adjacent to the fourth end (53), the second annular conductive sheet (520) being electrically connected to the third electrode layers (130) of the plurality of magnetic field enhancement assemblies (10).