CN114902420B - 固态成像元件和成像系统 - Google Patents

固态成像元件和成像系统

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Publication number
CN114902420B
CN114902420B CN202180007895.XA CN202180007895A CN114902420B CN 114902420 B CN114902420 B CN 114902420B CN 202180007895 A CN202180007895 A CN 202180007895A CN 114902420 B CN114902420 B CN 114902420B
Authority
CN
China
Prior art keywords
substrate
light
wiring
solid
state imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202180007895.XA
Other languages
English (en)
Chinese (zh)
Other versions
CN114902420A (zh
Inventor
中村诚
北野伸
村川祐亮
土本航也
花田拓也
野田裕贵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN114902420A publication Critical patent/CN114902420A/zh
Application granted granted Critical
Publication of CN114902420B publication Critical patent/CN114902420B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/47—Image sensors with pixel address output; Event-driven image sensors; Selection of pixels to be read out based on image data
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN202180007895.XA 2020-02-12 2021-02-02 固态成像元件和成像系统 Active CN114902420B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020021833 2020-02-12
JP2020-021833 2020-02-12
PCT/JP2021/003777 WO2021161855A1 (ja) 2020-02-12 2021-02-02 固体撮像素子および撮像システム

Publications (2)

Publication Number Publication Date
CN114902420A CN114902420A (zh) 2022-08-12
CN114902420B true CN114902420B (zh) 2025-08-19

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180007895.XA Active CN114902420B (zh) 2020-02-12 2021-02-02 固态成像元件和成像系统

Country Status (6)

Country Link
US (1) US20230058625A1 (https=)
EP (1) EP4105968A4 (https=)
JP (1) JPWO2021161855A1 (https=)
KR (1) KR20220139302A (https=)
CN (1) CN114902420B (https=)
WO (1) WO2021161855A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022163433A (ja) * 2021-04-14 2022-10-26 株式会社ニコン 撮像素子及び撮像装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018163838A1 (en) * 2017-03-08 2018-09-13 Sony Semiconductor Solutions Corporation Solid-state imaging apparatus and electronic apparatus
CN109729292A (zh) * 2017-10-30 2019-05-07 索尼半导体解决方案公司 固体摄像元件

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001085661A (ja) * 1999-09-13 2001-03-30 Nikon Corp 固体撮像装置
JP4117540B2 (ja) * 2002-10-17 2008-07-16 ソニー株式会社 固体撮像素子の制御方法
JP5645513B2 (ja) * 2010-07-07 2014-12-24 キヤノン株式会社 固体撮像装置及び撮像システム
JP2012064709A (ja) * 2010-09-15 2012-03-29 Sony Corp 固体撮像装置及び電子機器
US9634158B2 (en) * 2012-02-03 2017-04-25 Sony Corporation Semiconductor device and electronic equipment
JP2013187360A (ja) * 2012-03-08 2013-09-19 Sony Corp 固体撮像装置、及び、電子機器
JP6521586B2 (ja) * 2014-07-31 2019-05-29 キヤノン株式会社 固体撮像素子および撮像システム
JP2018101699A (ja) * 2016-12-20 2018-06-28 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、固体撮像装置の製造方法および電子機器
EP3576404B1 (en) 2017-10-30 2021-11-03 Sony Semiconductor Solutions Corporation Solid-state image pickup element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018163838A1 (en) * 2017-03-08 2018-09-13 Sony Semiconductor Solutions Corporation Solid-state imaging apparatus and electronic apparatus
CN109729292A (zh) * 2017-10-30 2019-05-07 索尼半导体解决方案公司 固体摄像元件

Also Published As

Publication number Publication date
JPWO2021161855A1 (https=) 2021-08-19
WO2021161855A1 (ja) 2021-08-19
CN114902420A (zh) 2022-08-12
EP4105968A4 (en) 2023-08-02
KR20220139302A (ko) 2022-10-14
US20230058625A1 (en) 2023-02-23
EP4105968A1 (en) 2022-12-21

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