CN114899699B - 垂直腔面激光器封装结构及封装方法 - Google Patents
垂直腔面激光器封装结构及封装方法 Download PDFInfo
- Publication number
- CN114899699B CN114899699B CN202210658516.XA CN202210658516A CN114899699B CN 114899699 B CN114899699 B CN 114899699B CN 202210658516 A CN202210658516 A CN 202210658516A CN 114899699 B CN114899699 B CN 114899699B
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- China
- Prior art keywords
- oxide layer
- substrate
- cavity surface
- vertical cavity
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000010409 thin film Substances 0.000 claims abstract description 28
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000000151 deposition Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- 229910052711 selenium Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02315—Support members, e.g. bases or carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210658516.XA CN114899699B (zh) | 2022-06-11 | 2022-06-11 | 垂直腔面激光器封装结构及封装方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210658516.XA CN114899699B (zh) | 2022-06-11 | 2022-06-11 | 垂直腔面激光器封装结构及封装方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN114899699A CN114899699A (zh) | 2022-08-12 |
CN114899699B true CN114899699B (zh) | 2024-03-26 |
Family
ID=82727286
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202210658516.XA Active CN114899699B (zh) | 2022-06-11 | 2022-06-11 | 垂直腔面激光器封装结构及封装方法 |
Country Status (1)
Country | Link |
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CN (1) | CN114899699B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1723405A (zh) * | 2002-10-21 | 2006-01-18 | 通用电气公司 | 光电子封装件以及制作方法 |
CN103762205A (zh) * | 2014-01-28 | 2014-04-30 | 华进半导体封装先导技术研发中心有限公司 | 兼容pcb工艺的多功能基板及其制作方法 |
WO2020026937A1 (ja) * | 2018-08-01 | 2020-02-06 | 東レ株式会社 | 樹脂組成物、樹脂シート、硬化膜、硬化膜の製造方法、半導体装置および表示装置 |
WO2021149374A1 (ja) * | 2020-01-20 | 2021-07-29 | ソニーセミコンダクタソリューションズ株式会社 | 発光装置およびその製造方法 |
CN114400219A (zh) * | 2021-12-10 | 2022-04-26 | 阿里巴巴(中国)有限公司 | 半导体器件及其制造方法、封装器件和电子装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8912020B2 (en) * | 2011-11-23 | 2014-12-16 | International Business Machines Corporation | Integrating active matrix inorganic light emitting diodes for display devices |
-
2022
- 2022-06-11 CN CN202210658516.XA patent/CN114899699B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1723405A (zh) * | 2002-10-21 | 2006-01-18 | 通用电气公司 | 光电子封装件以及制作方法 |
CN103762205A (zh) * | 2014-01-28 | 2014-04-30 | 华进半导体封装先导技术研发中心有限公司 | 兼容pcb工艺的多功能基板及其制作方法 |
WO2020026937A1 (ja) * | 2018-08-01 | 2020-02-06 | 東レ株式会社 | 樹脂組成物、樹脂シート、硬化膜、硬化膜の製造方法、半導体装置および表示装置 |
WO2021149374A1 (ja) * | 2020-01-20 | 2021-07-29 | ソニーセミコンダクタソリューションズ株式会社 | 発光装置およびその製造方法 |
CN114400219A (zh) * | 2021-12-10 | 2022-04-26 | 阿里巴巴(中国)有限公司 | 半导体器件及其制造方法、封装器件和电子装置 |
Non-Patent Citations (1)
Title |
---|
《OE Device Integration for Optically Enabled MCM》;Yoichi Taira等;《IEEE》;全文 * |
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Publication number | Publication date |
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CN114899699A (zh) | 2022-08-12 |
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Address after: Room 509, Building 18, Hengqin Creative Valley, No. 1889 Huandao East Road, Hengqin New District, Zhuhai City, Guangdong Province, 519000 Applicant after: Smart Integrated Technology (Zhuhai Hengqin) Co.,Ltd. Applicant after: Yifutong Integrated Technology (Zhuhai Hengqin) Co.,Ltd. Address before: Room 509, Building 18, Hengqin Creative Valley, No. 1889 Huandao East Road, Hengqin New District, Zhuhai City, Guangdong Province, 519000 Applicant before: Smart Integrated Technology (Zhuhai Hengqin) Co.,Ltd. Applicant before: Yifutong Integrated Technology (Shanghai) Co.,Ltd. |
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Address after: Room 50A, 5th Floor, Block C, Building 24, Science and Technology Innovation Park, Gangwan 1, Jintang Road, Tangjiawan Town, High tech Zone, Zhuhai City, Guangdong Province, 519000 Applicant after: Sibote Integrated Technology (Zhuhai) Co.,Ltd. Applicant after: Yifutong Integrated Technology (Zhuhai Hengqin) Co.,Ltd. Address before: Room 509, Building 18, Hengqin Creative Valley, No. 1889 Huandao East Road, Hengqin New District, Zhuhai City, Guangdong Province, 519000 Applicant before: Smart Integrated Technology (Zhuhai Hengqin) Co.,Ltd. Applicant before: Yifutong Integrated Technology (Zhuhai Hengqin) Co.,Ltd. |
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Effective date of registration: 20230629 Address after: Room 2104, Office Building, No. 191 Rongzhu Road, Hengqin New District, Zhuhai City, Guangdong Province, 519000 Applicant after: Yifutong Integrated Technology (Zhuhai Hengqin) Co.,Ltd. Address before: Room 50A, 5th Floor, Block C, Building 24, Science and Technology Innovation Park, Gangwan 1, Jintang Road, Tangjiawan Town, High tech Zone, Zhuhai City, Guangdong Province, 519000 Applicant before: Sibote Integrated Technology (Zhuhai) Co.,Ltd. Applicant before: Yifutong Integrated Technology (Zhuhai Hengqin) Co.,Ltd. |
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