CN114892261A - Trivalent chromium ion doped gadolinium yttrium scandium aluminum garnet laser crystal, preparation method and application thereof - Google Patents
Trivalent chromium ion doped gadolinium yttrium scandium aluminum garnet laser crystal, preparation method and application thereof Download PDFInfo
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C—CHEMISTRY; METALLURGY
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
Abstract
The invention discloses a trivalent chromium ion (Cr) 3+ ) Doped gadolinium yttrium scandium aluminum garnet laser crystal, preparation method and application. The invention is doped with Cr 3+ The chemical composition of the doped gadolinium yttrium scandium aluminum garnet laser crystal is (Gd) 1‑x Y x ) 3 (Cr z Sc y Al 1‑y‑z ) 2 Al 3 O 12 X is more than or equal to 0.0001 and less than or equal to 0.9999, y is more than or equal to 0.0001 and less than or equal to 0.9999, and z is more than or equal to 0.0005 and less than or equal to 0.02. The invention adopts a pulling method, a descending method and a heat exchange method to grow Cr 3+ Doped gadolinium yttrium scandium aluminum garnet crystal, the crystal Cr 3+ Uniform distribution, high thermal conductivity and good chemical stability. The crystal is aThe tunable laser crystal is green and environment-friendly, has excellent comprehensive performance, and can obtain the output of red light and near infrared laser. The crystal growth method provided by the invention can grow high-quality Cr 3+ The doped gadolinium yttrium scandium aluminum garnet laser crystal has wide application prospect in a plurality of fields such as industry, scientific research, national defense, medicine and the like.
Description
Technical Field
The invention relates to the technical field of laser crystal gain materials, in particular to a trivalent chromium ion doped gadolinium yttrium scandium aluminum garnet laser crystal, a preparation method and application thereof.
Background
The tunable laser is widely applied to the military and civilian fields of laser radar, laser communication, laser remote sensing, laser medical treatment and the like due to the wide tunable wavelength range. The tunable laser crystal is a key core material of a tunable laser, and the development of a novel tunable laser crystal has very important significance.
Cr-doped steel sheet 3+ The laser crystal occupies most of the tunable laser crystal, and the output wavelength of the laser covers 690-1100 nm. Cr (chromium) component 3+ Preferentially enter octahedral sites in the matrix when Cr is present 3+ When the octahedron is positioned at the symmetrical position, the chemical valence state is stable, and the octahedron is not easy to be oxidized and reduced. Cr (chromium) component 3+ The ions have wide absorption bands and can be used as pumping channels, the energy level splitting of the ions is large, and the excited state absorption is low.
Emerald (Cr) 3+ ：BeAl 2 O 4 ) The tunable laser can be output at about 700-800nm, and is widely studied. However, the aureoviride contains the highly toxic element beryllium (Be), and the inevitable diffusion of the Be compound during the growth and processing process causes great health damage to workers and great pollution to the environment. In addition, Cr is in BeAl 2 O 4 The segregation coefficient in the crystal is 2, the Cr concentration distribution is not uniform, the optical quality of the crystal is influenced, the technical difficulty of the growth process of the large-size aureophora crystal is very high, the aureophora is easy to cleave, the crystal is easy to crack in the growth process, and the domestic large-size crystal growth technology is still a technology introduced abroad at present.
The garnet series crystal has good physical and chemical properties, high thermal conductivity, hardness and optical quality, has stable structure, no phase change, no toxic elements, easy cutting, polishing and other processing, is very suitable to be used as a substrate material of a laser crystal, has mature growth process at present, and can grow a large-size high-quality crystal by using a pulling method. Since YAG belongs to a strong crystal field, Cr 3+ The spectral line in the crystal field is narrow, the wave band near 700-800nm can not be covered, and the sapphire can not be replaced. By Gd 3+ Partially substituted Y 3+ 、Sc 3+ Partially substituted Al 3+ Weakening the crystal field strength to make Cr 3+ The spectrum is widened and red-shifted, the waveband near 700-800nm is covered, the purpose of replacing the aureoviride is achieved, the segregation coefficient of Cr in the gadolinium yttrium scandium aluminum garnet laser crystal is 1, the concentration distribution of Cr is uniform, and the tunable laser crystal material with environmental protection and excellent comprehensive performance can be developed.
Disclosure of Invention
The invention discloses a trivalent chromium ion doped gadolinium yttrium scandium aluminum garnet laser crystal, a preparation method and application thereof, which are used for replacing aureoviride to output red light and near infrared laser, mainly in a wave band (as shown in figure 1) near 700 plus 800nm, are safe and harmless in the growth and processing processes, have uniform Cr concentration distribution in the crystal, are easy to grow large-size crystals, and are green, environment-friendly and excellent in comprehensive performance.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
a trivalent chromium ion doped gadolinium yttrium scandium aluminum garnet laser crystal is characterized in that: the chemical formula of the crystal is as follows: (Gd) 1-x Y x ) 3 (Cr z Sc y Al 1-y-z ) 2 Al 3 O 12 ，0.0001≤x≤0.9999，0.0001≤y≤0.9999，0.0005≤z≤0.02。
Furthermore, in the trivalent chromium ion doped gadolinium yttrium scandium aluminum garnet laser crystal, x is 0.3, y is 0.5, and z is 0.0018.
The preparation method of the trivalent chromium ion doped gadolinium yttrium scandium aluminum garnet laser crystal comprises the following steps:
s1, compounding: using Y with a purity of more than 99.999% 2 O 3 、Gd 2 O 3 、Cr 2 O 3 、Sc 2 O 3 And Al 2 O 3 As raw materials, the chemical formula is as follows: (Gd) 1-x Y x ) 3 (Cr z Sc y Al 1-y-z ) 2 Al 3 O 12 Weighing raw materials according to a metering ratio, and mixing and briquetting the raw materials to obtain a cake material;
s2, crystal growth: and obtaining the laser crystal by adopting a pulling method, a descending method and a heat exchange method.
Further, in the preparation method of the trivalent chromium ion doped gadolinium yttrium scandium aluminum garnet laser crystal, the S2 crystal growth specifically comprises:
s21, putting the cake obtained in the step S1 into a muffle furnace for sintering, taking out and cooling;
s22, placing the sintered cake material into an iridium crucible, placing into a single crystal furnace, vacuumizing, and filling nitrogen with the purity of more than 99.99%; adopting medium-frequency induction heating to melt the cake material; seed crystals are added, and the growth of the crystals is started, wherein the growth temperature is 1825-1835 ℃, the crystal pulling speed is 0.5-3 mm/h, and the rotating speed is 3-15 r/min; after the crystal growth is finished, slowly cooling to room temperature at the speed of 10-60 ℃/h, and discharging;
s23, annealing and preserving heat of the discharged crystal in a reducing atmosphere, wherein the annealing temperature is 1200-1500 ℃, and the heat preservation time is 10-30 h.
A solid laser comprises a crystal and a pumping source, wherein the crystal adopts the gadolinium yttrium scandium aluminum garnet laser crystal doped with trivalent chromium ions.
Further, in the above solid laser, the crystal is rod-shaped, rectangular parallelepiped, brewster's angle type, or slab-shaped.
Further, in the above solid laser, the pump source is a continuous coherent light source, a continuous incoherent light source, a pulsed coherent light source, or a pulsed incoherent light source having a wavelength of less than 700 nm.
Further, in the solid-state laser, the laser outputs continuous tunable laser, Q-switched pulsed laser, and tunable pulsed laser, and the output laser is red light or infrared laser.
Further, in the solid-state laser, the laser wavelength tuning may be performed by adjusting an operating temperature of the crystal or by inserting a tuning element into an optical path.
Further, the use of the solid-state laser: high resolution spectroscopy, nonlinear optics, telemetry, radar, photo-electric countermeasure and laser cosmetology
Compared with the prior art, the invention has the beneficial effects that:
compared with the aurochite, the trivalent chromium ion doped gadolinium yttrium scandium aluminum garnet has the outstanding advantages that (1) the blue light and red light absorption peak positions can be better matched with commercially available LDs with wave bands of 445nm and 636nm, and the absorption peak of the aurochite deviates greatly from the two wavelengths; (2) no toxic elements are contained; (3) cr (chromium) component 3+ The gadolinium, yttrium, scandium and aluminum garnet crystals are uniformly distributed, and the optical uniformity of the crystals is better; (4) the optical properties such as absorption, emission, fluorescence life, emission cross section and the like of the crystal can be optimized by adjusting the components of the gadolinium, yttrium, scandium and aluminum garnet crystal, and the laser crystal with higher efficiency and wider tuning range can be obtained; (5) the crystal growth technology is mature, and a crystal with large size and high quality can be grown by using a pulling method. The crystal is a green and environment-friendly tunable red light and near infrared laser crystal which has excellent comprehensive performance and can be directly pumped by LD, can be made into a tunable solid laser, and can be applied to the military and civil fields of laser radar, laser communication, laser remote sensing, laser medical treatment and the like.
Drawings
Fig. 1 shows the absorption and fluorescence spectra of gadolinium yttrium scandium aluminum garnet doped with trivalent chromium ions.
FIG. 2 shows trivalent chromium ion doped gadolinium yttrium scandium aluminum garnet
FIG. 3 is a schematic optical path diagram of embodiment 1 of the fixed laser of the present invention;
fig. 4 is a schematic diagram of a tunable laser device according to embodiment 3 of the present invention.
Detailed Description
The following will describe in detail specific embodiments of the present invention with reference to examples:
example 1
0.18at.％Cr 3+ The gadolinium yttrium scandium aluminum garnet crystal is applied to a laser device. Selecting commercially purchased Y with purity of 99.999% 2 O 3 、Gd 2 O 3 、Cr 2 O 3 、Sc 2 O 3 、Al 2 O 3 As a raw material, according to the chemical formula (Y) 0.0001 Gd 0.9999 ) 3 (Cr 0.0018 Sc 0.9811 Al 0.0001 ) 2 Al 3 O 12 The raw materials are matched, all the raw materials are mixed and put into a mixer for mixing for more than 12 hours, and the raw materials are uniformly mixed and then are pressed into cylindrical cakes by a hydraulic machine under the pressure of 0.5-5 GPa; putting the pressed cake material into a muffle furnace, sintering at 1400 ℃ for 4h, and cooling to obtain a sintered cake material; putting the sintered cake material into an iridium crucible, completely replacing air in a single crystal furnace by high-purity N2 gas, adopting medium-frequency induction heating, and adopting a Czochralski method growth process to grow 0.18 at.% of Cr 3+ Gadolinium yttrium scandium aluminum garnet crystal.
0.18at.％Cr 3+ A method for realizing laser output by a gadolinium yttrium scandium aluminum garnet crystal, as shown in fig. 2, a pumping source 1, a laser focusing system 2, an input mirror 3, a crystal 4 and an output mirror 5 are coaxially arranged, 6 is output laser; wherein the pump light is excited by an LD pump source with the wavelength of 450 nm; the laser focusing system consists of two plano-convex lenses with the focal length of 50mm, and the distance between the plano-convex lenses and the focal length of the plano-convex lenses is 50 mm; the input mirror 3 is a flat mirror, and a high-transmittance dielectric film of 450nm and a high-reflectance dielectric film of 755nm are plated on the light-transmitting end face; the crystals are 0.18 at.% Cr 3+ The light-passing length of the gadolinium yttrium scandium aluminum garnet crystal is 10mm, and the light-passing surface is 3 multiplied by 3mm 2 Square of (2); the output mirror is plated with a dielectric film with high reflectivity of 450nm and a dielectric film with partial transmittance of 755nm, wherein the transmittance is 1-10%, and the preferred dielectric film has the transmittance of 5%. The saturable absorber is added in the cavity mirror to realize the output of the pulse laser.
In this example, 0.18 at.% Cr is disclosed 3+ The gadolinium yttrium scandium aluminum garnet crystal can realize continuous and pulse output of 755nm laser.
Example 2
2at.％Cr 3+ The gadolinium yttrium scandium aluminum garnet crystal is applied to a laser device. Selecting commercially purchased Y with purity of 99.999% 2 O 3 、Gd 2 O 3 、Cr 2 O 3 、Sc 2 O 3 、Al 2 O 3 As a raw material, according to the chemical formula (Y) 0.9999 Gd 0.0001 ) 3 (Cr 0.02 Sc 0.88 Al 0.1 ) 2 Al 3 O 12 The raw materials are matched, all the raw materials are mixed and put into a mixer for mixing for more than 12 hours, and the raw materials are uniformly mixed and then are pressed into cylindrical cakes by a hydraulic machine under the pressure of 0.5-5 GPa; putting the pressed cake material into a muffle furnace, sintering at 1400 ℃ for 4h, and cooling to obtain a sintered cake material; putting the baked cake material into an iridium crucible, and adding high-purity N 2 Air in the single crystal furnace is replaced by gas, medium-frequency induction heating is adopted, and 2 at.% Cr is grown by adopting a Czochralski method growth process 3+ Gadolinium yttrium scandium aluminum garnet crystal.
2at.％Cr 3+ A method for realizing laser output by a gadolinium yttrium scandium aluminum garnet crystal, as shown in fig. 2, a pumping source 1, a laser focusing system 2, an input mirror 3, a crystal 4 and an output mirror 5 are coaxially arranged, 6 is output laser; wherein the pump light is excited by an LD pump source with the wavelength of 636 nm; the laser focusing system consists of two plano-convex lenses with the focal length of 50mm, and the distance between the plano-convex lenses and the focal length of the plano-convex lenses is 50 mm; the input mirror 3 is a flat mirror, and a high-transmittance dielectric film of 636nm and a high-reflectivity dielectric film of 755nm are plated on the light-transmitting end face; the crystals are 2 at.% Cr 3+ The light-passing length of the gadolinium yttrium scandium aluminum garnet crystal is 3mm, and the light-passing surface is 3 multiplied by 3mm 2 Square of (2); the output mirror is plated with a dielectric film with high reflectivity of 450nm and a dielectric film with partial transmittance of 755nm, wherein the transmittance is 1-20%, and the preferred dielectric film has the transmittance of 7%. The saturable absorber is added in the cavity mirror to realize the output of the pulse laser.
In this example, 2 at.% Cr is disclosed 3+ Gadolinium yttrium scandium aluminum garnet crystal capable of realizing 755nm laserAnd continuously outputting pulses.
Example 3
0.05at.％Cr 3+ The gadolinium yttrium scandium aluminum garnet crystal is applied to a laser device. Selecting commercially purchased Y with purity of 99.999% 2 O 3 、Gd 2 O 3 、Cr 2 O 3 、Sc 2 O 3 、Al 2 O 3 As a raw material, according to the chemical formula (Y) 0.9 Gd 0.1 ) 3 (Cr 0.0005 Sc 0.5 Al 0.4995 ) 2 Al 3 O 12 The raw materials are matched, all the raw materials are mixed and put into a mixer for mixing for more than 12 hours, and the raw materials are uniformly mixed and then are pressed into cylindrical cakes by a hydraulic machine under the pressure of 0.5-5 GPa; putting the pressed cake material into a muffle furnace, sintering at 1400 ℃ for 4h, and cooling to obtain a sintered cake material; putting the baked cake material into an iridium crucible, and adding high-purity N 2 Air in the single crystal furnace is replaced by gas completely, medium-frequency induction heating is adopted, and a Czochralski method growth process is adopted to grow 0.05 at.% of Cr 3+ Gadolinium yttrium scandium aluminum garnet crystal.
0.05at.％Cr 3+ A method for realizing laser output by gadolinium yttrium scandium aluminum garnet crystal is shown in figure 3, wherein pump light is LD fiber coupled laser with wavelength of 450nm, BiFi is birefringent filter for tuning output wavelength, and CM 1 、CM 2 And M 3 Are coated with high-reflectivity films of 450nm and 700-850 nm, and the crystal is 0.05 at.% Cr 3+ Gadolinium yttrium scandium aluminum garnet crystal, Brewster angle type, light-passing length of 18mm, light-passing surface of 3X 3mm 2 Square of (2); the output mirror OC is plated with a dielectric film with 450nm high reflectivity and a dielectric film with 700-850 nm partial transmission, wherein the transmission rate is 1-10%, and the preferred transmission rate is 1%. The M3 mirror was replaced with a SESAM saturable absorber to achieve a tuned pulsed laser output.
In this example, 0.05 at.% Cr is disclosed 3+ The gadolinium yttrium scandium aluminum garnet crystal can realize continuous and pulse output of 700-850 nm laser.
Example 4
0.22at.％Cr 3+ Gadolinium yttrium scandium aluminum garnetUse of a crystal in a laser device. Selecting commercially purchased Y with purity of 99.999% 2 O 3 、Gd 2 O 3 、Cr 2 O 3 、Sc 2 O 3 、Al 2 O 3 As a raw material, according to the chemical formula (Y) 0.5 Gd 0.5 ) 3 (Cr 0.0022 Sc 0.9 Al 0.078 ) 2 Al 3 O 12 The raw materials are matched, all the raw materials are mixed and put into a mixer for mixing for more than 12 hours, and the raw materials are uniformly mixed and then are pressed into cylindrical cakes by a hydraulic machine under the pressure of 0.5-5 GPa; putting the pressed cake material into a muffle furnace, sintering at 1400 ℃ for 4h, and cooling to obtain a sintered cake material; putting the baked cake material into an iridium crucible, and adding high-purity CO 2 Air in the single crystal furnace is replaced by gas completely, medium-frequency induction heating is adopted, and a Czochralski method growth process is adopted to grow 0.22 at.% Cr 3+ Gadolinium yttrium scandium aluminum garnet crystal.
0.22at.％Cr 3+ A method for realizing laser output by gadolinium yttrium scandium aluminum garnet crystal is shown in figure 3, wherein pump light is LD fiber coupled laser with the wavelength of 636nm, BiFi is birefringent filter used for tuning output wavelength, and CM 1 、CM 2 And M 3 Are coated with 636nm and 700-800nm high-reflectivity films, and the crystal is 0.22 at.% Cr 3+ Gadolinium yttrium scandium aluminum garnet crystal, Brewster angle type, light-passing length is 10mm, light-passing surface is 3X 3mm 2 Square of (2); the output mirror OC is plated with a dielectric film with 636nm high reflectivity and a dielectric film with 700-800nm partial transmission, wherein the transmission rate is 1-10%, and the preferred transmission rate is 5%. The M3 mirror was replaced with a SESAM saturable absorber to achieve a tuned pulsed laser output.
In this example, 0.22 at.% Cr is disclosed 3+ The gadolinium yttrium scandium aluminum garnet crystal can realize continuous and pulse output of 700-800nm laser.
Claims (10)
1. A trivalent chromium ion doped gadolinium yttrium scandium aluminum garnet laser crystal is characterized in that: the chemical formula of the crystal is as follows: (Gd) 1-x Y x ) 3 (Cr z Sc y Al 1-y-z ) 2 Al 3 O 12 ，0.0001≤x≤0.9999，0.0001≤y≤0.9999，0.0005≤z≤0.02。
2. The trivalent chromium ion doped gadolinium yttrium scandium aluminum garnet laser crystal according to claim 1, which is characterized in that: x is 0.3, y is 0.5, and z is 0.0018.
3. A preparation method of a trivalent chromium ion doped gadolinium yttrium scandium aluminum garnet laser crystal is characterized by comprising the following steps: the method comprises the following steps:
s1, compounding: using Y with a purity of more than 99.999% 2 O 3 、Gd 2 O 3 、Cr 2 O 3 、Sc 2 O 3 And Al 2 O 3 As raw materials, the chemical formula is as follows: (Gd) 1-x Y x ) 3 (Cr z Sc y Al 1-y-z ) 2 Al 3 O 12 Weighing raw materials according to a metering ratio, and mixing and briquetting the raw materials to obtain a cake material;
s2, crystal growth: and obtaining the laser crystal by adopting a pulling method, a descending method and a heat exchange method.
4. The preparation method of trivalent chromium ion doped gadolinium yttrium scandium aluminum garnet laser crystal according to claim 1, characterized in that: s2, crystal growth, specifically comprising:
s21, putting the cake obtained in the step S1 into a muffle furnace for sintering, taking out and cooling;
s22, placing the sintered cake material into an iridium crucible, placing into a single crystal furnace, vacuumizing, and filling nitrogen with the purity of more than 99.99%; adopting medium-frequency induction heating to melt the cake material; seed crystals are added, and the growth of the crystals is started, wherein the growth temperature is 1825-1835 ℃, the crystal pulling speed is 0.5-3 mm/h, and the rotating speed is 3-15 r/min; after the crystal growth is finished, slowly cooling to room temperature at the speed of 10-60 ℃/h, and discharging;
s23, annealing and preserving heat of the discharged crystal in a reducing atmosphere, wherein the annealing temperature is 1200-1500 ℃, and the heat preservation time is 10-30 h.
5. A solid laser comprises a crystal and a pumping source, and is characterized in that the crystal adopts a trivalent chromium ion doped gadolinium yttrium scandium aluminum garnet laser crystal according to any one of claims 1 to 4.
6. The solid state laser of claim 5, wherein said crystal is rod-shaped, rectangular parallelepiped, brewster's angle type, or slab-shaped.
7. The solid state laser of claim 5, wherein the pump source is a continuous coherent light source, a continuous incoherent light source, a pulsed coherent light source, or a pulsed incoherent light source having a wavelength of less than 700 nm.
8. The solid state laser of claim 5, wherein the fixed laser outputs continuously tunable laser light, Q-switched pulsed laser light, tunable pulsed laser light, and the output laser light is red or infrared laser light.
9. The solid state laser of claim 8, wherein said fixed laser wavelength tuning is configured to adjust the operating temperature of said crystal or to insert a tuning element in the optical path.
10. Use of a solid state laser as claimed in any one of claims 5 to 9 wherein: the stationary laser is used in high resolution spectroscopy, nonlinear optics, remote sensing technology, radar technology, photo-electricity countermeasure and laser cosmetology.
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