CN110190509A - Wavelength stabilized laser light source based on photon crystal laser - Google Patents
Wavelength stabilized laser light source based on photon crystal laser Download PDFInfo
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- CN110190509A CN110190509A CN201910443275.5A CN201910443275A CN110190509A CN 110190509 A CN110190509 A CN 110190509A CN 201910443275 A CN201910443275 A CN 201910443275A CN 110190509 A CN110190509 A CN 110190509A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/0687—Stabilising the frequency of the laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
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- General Physics & Mathematics (AREA)
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Abstract
The present invention provides a kind of Wavelength stabilized laser light source based on photon crystal laser, it include: shell, semiconductor cooler, transition block, heat sink, low divergence single-mode photon crystal laser chip, thermistor, back light detector, the composition such as spherical optical fibre with fiber grating.The laser light source, with the dual wavelength stabilization technique of fiber grating combined, has higher wavelength stability using low divergence single-mode photon crystal laser chip, and can effectively reduce driving current, temperature and light feedback correlative factor influences wavelength stability.Low divergence single-mode photon crystal laser chip is using composite photonic crystal etc. to light field and mode adjusting mechanism in the laser light source, only need an extension and common optical graving for technology, laser divergence angle is reduced from chip level, realize single-mode output, simplify beam shaping, realization and spherical optical fibre direct-coupling, not only there is high optical coupling efficiency, and resetting difficulty is substantially reduced, low cost of manufacture.
Description
Technical field
The disclosure belongs to field of semiconductor lasers, is related to a kind of semiconductor laser wavelength stability approach and wavelength is steady
Determine laser light source.
Background technique
Semiconductor laser is used widely due to the advantages that small in size, high-efficient, the service life is long, easy of integration, is current
One of most important laser light source.For traditional semiconductor laser due to its own design feature, it is big, more that there are vertical divergence angles
The bottleneck problems such as longitudinal mode, wavelength stability difference.Semiconductor laser all needed in many applications it is Wavelength stabilized, as optical fiber is logical
The application fields such as letter, optical fibre gyro, solid state laser pumping source, image intensifer, high-resolution spectro scopy and laser measurement.Semiconductor
Laser wavelength can change with operating current and temperature and change, " crosstalk " can be caused in fiber optic communication and increase system
The bit error rate will cause the mismatch with gain media absorption spectra in solid state laser pumping source, influence pumping efficiency；High-precision is used
Property navigation grade optical fibre gyro (precision < 0.001o/h), it is desirable that the mean wavelength stability of light source be better than 1ppm/oC, wave length shift
Precision of optical fibre gyro directly affected etc. all needs the wavelength stability for improving semiconductor laser.Influence semiconductor laser
There are many device wavelength factors of instability, such as temperature, carrier concentration, chamber length, energy gap, gain, refractive index.Semiconductor laser
It is Wavelength stabilized a degree of stabilization to be realized by control temperature and the stability of Injection Current, but to obtain higher
Stability is needed to wavelength locking.
Currently, realizing there are many semiconductor laser wavelength stability approach, simply do introduce below: 1) exocoel is anti-
Present wavelength stabilization method.This method is fed back using light such as gratings to control the frequency characteristic of semiconductor, and external cavity feedback is steady at present
Long most of the method for standing wave is by volume holographic grating (VHG), claims volume Bragg grating (VBG) or fiber grating (FBG)
It realizes wavelength stability, requires manufacture craft stringenter, and higher cost.2) inner cavity wavelength stabilization method, should
Method is that Wavelength stabilized structure is integrated into inside semiconductor laser, is realized by internal structure Wavelength stabilized.Common
It is distributed feedback laser (DFB) and distributed Bragg reflection laser (DBR), inclination chamber (TCL) or inclination wave laser
The methods of (TWL).DBR and Distributed Feedback Laser all have that output power is relatively low, need complicated secondary epitaxy technology and complicated light
Grid technology of preparing, cost of manufacture are high.Tilted cavity laser or inclination its resonance characteristics based on multilayered structure of wave laser are inclined
The light reflection spectrum of oblique incident ray realizes wavelength stability.Wavelength stability is poor, and Wavelength stabilized coefficient can only arrive 0.1nm/oC.It adopts
With the semiconductor laser of inside wavelength antihunt means than being had more preferably using the semiconductor laser of external wavelength antihunt means
System compatibility and lower assembly.
It is usual 40 degree of the generally existing vertical divergence angle of semiconductor laser or so at present, low with optical coupling efficiency, usually
It is coupled using with inclined wedge-shaped optical fiber, improves coupling efficiency, but resetting difficulty is big.In practical applications, it is also necessary to which semiconductor swashs
Light device has the good output characteristics of optical quality, and optical coupling efficiency can be improved so as to improve laser performance.
The present invention proposes to combine using low divergence single-mode photon crystal laser chip with spherical optical fibre grating dual
Wavelength stabilizing technique improves wavelength stability simultaneously, improves optical coupling efficiency, reduces resetting difficulty.Wherein low divergence list
Mould photor crystal laser chip, to light field and mode adjusting mechanism, reduces laser from chip level using composite photonic crystal etc.
The angle of divergence realizes single-mode output, improves coupling efficiency, reduces debugging difficulty, realizes low cost；Using spherical optical fibre grating frequency stabilization
Technology make pump laser have higher wavelength stability, while effectively reduce driving current, temperature it is related to light feedback because
The wavelength stability of element.
Summary of the invention
(1) technical problems to be solved
The present invention provides a kind of the purpose of the present invention is to provide a kind of Wavelength stabilized laser lights based on photonic crystal
Source solves semiconductor laser wavelength stability problem, while improving coupling efficiency, reduces fiber coupling debugging difficulty, low system
Make cost.
(2) technical solution
The present invention provides a kind of, a kind of Wavelength stabilized laser light based on photon crystal laser is disclosed according to the present invention
Source, comprising:-shell is cuboid structure；Semiconductor cooler is produced on the bottom surface inside shell；Transition block is produced on
The surface of the upper surface of semiconductor cooler；It is heat sink, make the upper surface of transition block；Low divergence single-mode photon crystal laser core
Piece is produced on heat sink；Thermistor is produced on heat sink；Back light detector is produced on heat sink；With Bragg grating
It is flat not to need special optical shaping and calibration for spherical optical fibre and low divergence single-mode photon crystal laser chip direct-coupling
Platform has coupling efficiency, reduces coupling debugging difficulty, low cost of manufacture.
(3) beneficial effect
It can be seen from the above technical proposal that a kind of Wavelength stabilized laser light source based on photon crystal laser of the present invention
It has the advantages that
(1) laser light source is dual with combining for fiber grating using low divergence single-mode photon crystal laser chip
Wavelength stabilizing technique has higher wavelength stability, can effectively reduce driving current, temperature and light feedback correlative factor pair
Wavelength stability influences.
(2) in the laser light source low divergence single-mode photon crystal laser chip using composite photonic crystal etc. to light field and
Mode adjusting mechanism, it is only necessary to which an extension and common optical graving reduce laser divergence angle from chip level for technology, realize single
Mould output, simplifies beam shaping, realizes with spherical optical fibre direct-coupling, not only has high optical coupling efficiency, but also drops significantly
Low resetting difficulty, low cost of manufacture.
Detailed description of the invention
Fig. 1 is the Wavelength stabilized laser light source structure chart based on photon crystal laser.Fig. 2 is low divergence single mode photon
Crystal laser chip structure figure.
Fig. 3 is low divergence single-mode photon crystal laser chip structure chart top view.
Fig. 4 is low divergence single-mode photon crystal laser near-field distribution map.
Fig. 5 is low divergence single-mode photon crystal laser vertical divergence angle simulation drawing.
Fig. 6 is low divergence single-mode photon crystal laser reflection spectrum analog figure.
Fig. 7 is low divergence single-mode photon crystal laser chip P-I-V curve.
Fig. 8 is low divergence single-mode photon crystal laser chip far-field divergence angle.
Fig. 9 is low divergence single-mode photon crystal laser chip spectrogram.
Figure 10 is that general semiconductor laser with spherical optical fibre couples figure.
Figure 11 is that low divergence single-mode photon crystal laser chip with spherical optical fibre couples figure.
Figure 12 is the Wavelength stabilized laser light source spectrogram based on photon crystal laser.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in more detail.It should be noted that in attached drawing or specification description, similar or identical portion
Divide and all uses identical figure number.The implementation for not being painted or describing in attached drawing is those of ordinary skill in technical field
Known form.In addition, though can provide the demonstration of the parameter comprising particular value herein, it is to be understood that parameter is without definite etc.
In corresponding value, but can be similar to be worth accordingly in acceptable error margin or design constraint.It is mentioned in embodiment
Direction term, such as "upper", "lower", "front", "rear", "left", "right" etc. are only the directions with reference to attached drawing.Therefore, the side used
Protection scope of the present invention is intended to be illustrative and not intended to limit to term.
The present invention proposes to combine using low divergence single-mode photon crystal laser chip with spherical optical fibre grating dual
Wavelength stabilizing technique improves wavelength stability simultaneously, improves optical coupling efficiency, reduces resetting difficulty.Wherein low divergence list
Mould photor crystal laser chip, to the regulatory mechanism of light field and mode, reduces laser from chip level using composite photonic crystal etc.
The device angle of divergence realizes single-mode output, improves coupling efficiency, reduces debugging difficulty, realizes low cost；It is steady using spherical optical fibre grating
Frequency technology makes pump laser have higher wavelength stability, while it is related to light feedback to effectively reduce driving current, temperature
The wavelength stability of factor.
Fig. 1 is the Wavelength stabilized laser light source structure chart based on photon crystal laser.
In the exemplary embodiment that the present invention announces, a kind of 976nm wave band photor crystal laser wavelength is provided
Stabilized lasers light source please refers to Fig. 1, and the Wavelength stabilized laser light source in the present embodiment includes: a shell 1, semiconductor cooler
2, transition block 3, heat sink 4, thermistor 5, low divergence single-mode photon crystal laser chip 6, back light detector 7, spherical optical fibre
8, Bragg grating 9.
Shell 1 is 14 needle standard butterfly encapsulating packages, and there is a circular opening in tail portion, and shell is gold-plated；
Semiconductor cooler 2 is weldingly fixed on 1 medial surface of shell；
Transition block 3, material are tungsten copper or nickel, are welded on semiconductor cooler 2 by solder；
Heat sink 4, it is made of aluminium nitride, has prefabricated AuSn solder above, be welded in transition block 3 by solder；
Thermistor 5, low divergence single-mode photon crystal laser chip 6 and back light detector 7 are weldingly fixed on heat sink 4
On；Due to having prefabricated AuSn solder on heat sink 4, thermistor 5, low divergence single-mode photon crystal laser core may be implemented
Piece 6 and backlight detect 7 devices and are sintered simultaneously by AuSn solder, have high heat conductance, low strain dynamic, are not susceptible to thermophoresis and electricity moves
It moves, there is high reliability；
Spherical optical fibre 8, front end are spherical designs, and radius is according to the hair of low divergence single-mode photon crystal laser chip 6
The adjustment of angle size is dissipated, spherical optical fibre core diameter is 5.9 μm, and numerical aperture 0.22, the radius of optical fiber spherical part is 15 μm, before optical fiber
End plating anti-reflection film, reflectivity 2% or so, 976 ± 15nm of reflection bandwidth；
Bragg grating 9, spherical optical fibre 8 have Bragg grating 9, Bragg grating 9 can be single Bragg grating or
Double Bragg gratings meet 976 ± 0.25nm wavelength, and Sidelobe Suppression is than being 20-30dB after apodization.
The light source does not need special optical shaping and calibration platform, using low divergence single-mode photon crystal laser core
Piece 6 and 8 direct-coupling of spherical optical fibre for having Bragg grating 9, improve coupling efficiency, reduce coupling debugging difficulty, reduce system
Make cost.
Fig. 2 is low divergence single-mode photon crystal laser chip 6, from bottom to top includes: N-type electrode 6.1, substrate 6.2, N
Type photonic crystal 6.3, N-type lower waveguide layer 6.4, active area 6.5, ducting layer 6.6 in p-type, p-type upper limiting layer 6.7, p-type ohm
Contact layer 6.8, ridge waveguide gain region 6.9 and 6.10, photonic crystal modeling area 6.11, insulating layer 6.12 as shown in Figure 3, p-type
Electrode 6.13.
Wherein N-type electrode 6.1 is formed in the back side of substrate 6.2, and material is the materials such as AuGeNi/Au.
N-type photonic crystal 6.3 is formed in the front of substrate 6.2, and photon crystal structure is handed over using period or height paracycle
For AlxGal-xAs material composition, Al component x is in 0.1-0.35 variation range, high Al contents layer 6.31 and low Al component layers 6.32
It is alternately arranged, is used to form electric current injection channel and longitudinal light field extension.
N-type lower waveguide layer 6.4 is formed in the front of N-type lower limit layer 6.3, forms for AlGaAs material, is used to form electricity
Flow injection channel and longitudinal light field limitation.
Active area 6.5 is formed in the top of N-type lower waveguide layer 6.4, on the sandwiched N-type lower waveguide layer 6.4 of sandwich style and p-type
Between ducting layer 6.6, it is made of 1 InGaAs Quantum Well, for providing the gain of light.
Ducting layer 6.6 in p-type are formed in the top of the active area 6.5, are used to form electric current injection channel and longitudinal light
Field limitation, is made of AlGaAs material.
P-type upper limiting layer 6.7 is formed in the top of ducting layer 6.6 in the p-type, be used to form electric current injection channel and
Longitudinal light field limitation, is made of AlGaAs material.
P-type ohmic contact layer 6.8 is formed in the top of the p-type upper limiting layer 6.7, is heavily doped layer, and doping concentration is big
In 1x1019Cm-3 is used to form Ohmic contact, is made of GaAs material.
Ridge waveguide gain region 6.9 and 6.10, ridge waveguide gain region etching depth to part p-type upper limiting layer 6.7, ridge
Type waveguide item is 5 μm wide, the long 0.5-3mm of chamber, for providing gain on light direction.
Photonic crystal modeling area 6.11, is distributed in the centre of laser ridge item, by 10 periods or photon crystalline substance paracycle
Body is constituted, and 10.69 μm of the photonic crystal period, 1.1 μm of slot width, simulated photons crystal reflection spectrogram is shown in Fig. 6, in multiple periods
Or quasiperiodic photonic crystal structure carries out longitudinal mode selection, plays the role of high-order DBR grating.
Insulating layer 6.12 is formed in be set forth in ridge waveguide gain region 6.9 and 6.10 and photonic crystal modeling area 6.11
Region used outside electric current injection channel, material SiO2.The insulating layer 6.12 is by ridge waveguide gain region 6.9,6.10 and light
The cladding of sub- crystal modeling area 6.11 is got up, with external insulation.
P-type electrode 6.13 is formed in the top of the insulating layer 6.12, is prepared with the methods of magnetron sputtering, P-type electrode
6.13 materials are TiAu or TiPtAu, are covered in the platform of ridge waveguide gain region 6.9 and 6.10 and photonic crystal modeling area 6.11
Above face, side wall and table top one or both sides, except photonic crystal slot area, ridge waveguide gain region 6.9 and 6.10 and light
Sub- crystal modeling area 6.11 shares an electrode, obtains P-type electrode 6.13 by photoetching and wet etching or the method for removing
Figure.
Fig. 4 is inexpensive low divergence single longitudinal mode photonic crystal edge-emitting laser longitudinal direction optical field distribution, N-type photonic crystal
The waveguide period 7 is right, and corresponding far-field emission angle is Fig. 5, analog result vertical divergence angle 11.4o.
Fig. 6 is that spectrogram is reflected in photonic crystal modeling area, and photonic crystal modeling area is made of 10 slits, the slit period
10.69 μm, 1.1 μm of slot width, 1.3 μm of slit etching depth.As can be seen from the figure in 0.95-1 μ m, reflectance spectrum
There are three high reflectance zone, energy reflectivities 0.4 or so.It is interested at us in view of the width 50-60nm of Quantum Well gain spectral
Central wavelength reflect band in 976nm, reflection band half-breadth 2.4nm is general to require to be narrow reflectance spectrum, it is ensured that single mode operation.
Fig. 7 is inexpensive low divergence single-mode photon crystal laser chip P-I-V curve, and ridge item is 5 μm wide, single-mode laser
The long 2mm of device chamber, 10.69 μm of lateral photon crystal period, quantity are 10,1.1 μm of slot width.Laser threshold current
45mA, single-mode output power 255mW@300mA, Fig. 8, is seen in 7.1 degree of horizontal divergence angle by 12.9 degree of vertical divergence angle.Side mode suppressing
Than being greater than 30dB, Fig. 9 is seen.
Figure 10 be general semiconductor laser, 6 degree of horizontal divergence angle, 26 degree of vertical divergence angle, R=15 μm of theoretical calculation
With spherical optical fibre coupling efficiency 62%.
Figure 11 be general semiconductor laser, 6 degree of horizontal divergence angle, 13 degree of vertical divergence angle, R=15 μm of theoretical calculation
With spherical optical fibre coupling efficiency 97%.
Figure 12 is combined using low divergence single-mode photon crystal laser chip with spherical optical fibre grating, and fiber coupling is reduced
Debugging difficulty realizes that fiber power is greater than 140mW@200A, coupling efficiency 82%, and side mode suppression ratio is greater than 40dB.
It should be noted that, although above-described embodiment is carried out by taking 976nm band wavelength stabilized lasers light source InGaAs an example
Illustrating, but the present invention is not limited thereto, wave band can also be able to be N-type GaAs with covering visible light to long wavelength, substrate material,
GaSb, InP, GaN etc.；Active area can also be Quantum Well or the quantum such as GaAs, InGaAs, AlGaInAs, InGaAsP, InGaN
Point or quanta cascade super crystal lattice material；Insulating layer can be silicon nitride or SiO2；Above deformation is also included in of the invention
Within protection scope.
It should be noted that the above-mentioned definition to each element is not limited in the various specific structures mentioned in embodiment
Or shape, those skilled in the art can replace with simply being known to it.
Particular embodiments described above has carried out further in detail the purpose of the present invention, technical scheme and beneficial effects
It describes in detail bright, it should be understood that the above is only a specific embodiment of the present invention, is not intended to restrict the invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution, improvement and etc. done should be included in guarantor of the invention
Within the scope of shield.
Claims (10)
1. a kind of Wavelength stabilized laser light source based on photon crystal laser characterized by comprising
Shell is cuboid structure；
Semiconductor cooler is produced on the bottom surface inside shell；
Transition block is produced on the upper surface of semiconductor cooler；
It is heat sink, make the upper surface of transition block；
Low divergence single-mode photon crystal laser chip, is produced on heat sink；
Thermistor is produced on heat sink；
Back light detector is produced on heat sink；
Spherical optical fibre with fiber grating；
Low divergence single-mode photon crystal laser chip is directly and fiber coupling.
2. a kind of Wavelength stabilized laser light source based on photon crystal laser according to claim 1, which is characterized in that
The low divergence single-mode photon crystal laser chip is to introduce period or paracycle in semiconductor laser epitaxial structure direction
Photon crystal structure increases mode volume, reduces vertical divergence angle from chip level.
3. a kind of Wavelength stabilized laser light source based on photon crystal laser according to claim 1, which is characterized in that
The wherein shell is cuboid shell, is butterfly shell or 14 needle butterfly standard shells；Shell embedded semiconductor refrigeration
Device, low divergence single-mode photon crystal laser chip, thermistor and back light detector.
4. a kind of Wavelength stabilized laser light source based on photon crystal laser according to claim 1, which is characterized in that
It is described heat sink, it is heat sink for the aluminium nitride material with AuSn solder, to realize low divergence single-mode photon crystal laser chip, heat
Quick resistance and back light detector are simultaneously with the sintering of AuSn solder.
5. a kind of Wavelength stabilized laser light source based on photon crystal laser according to claim 1, which is characterized in that
The laser light source stablizes skill with the dual wavelength of fiber grating combined using low divergence single-mode photon crystal laser chip
Art, wherein 0.07nm/ DEG C of wavelength stability of the low divergence single-mode photon crystal laser chip, the wavelength of fiber grating is steady
Determine 0.02nm/ DEG C, the wavelength stability of laser light source is less than 0.008/ DEG C.
6. a kind of Wavelength stabilized laser light source based on photon crystal laser according to claim 1, which is characterized in that
The spherical optical fibre front end is spherical shape, and radius is adjusted according to the angle of divergence size of low divergence single-mode photon crystal laser chip,
Spherical optical fibre has fiber bragg grating (FBG), fiber grating can single Bragg grating or double Bragg gratings, before optical fiber
End plating anti-reflection film.
7. a kind of Wavelength stabilized laser light source based on photon crystal laser according to claim 1, which is characterized in that
The fiber grating is the fiber grating etched on single mode coupling optical fiber by UV laser pulses, as tail optical fiber and low hair
It dissipates angle single-mode photon crystal laser chip to be attached, constitutes an external cavity feedback and output wavelength is made to be locked in fiber grating
Near central wavelength.
8. a kind of Wavelength stabilized laser light source based on photon crystal laser according to claim 2, which is characterized in that
The low divergence single-mode photon crystal laser chip is laterally to introduce period or recombination photons paracycle in semiconductor laser
Crystal structure realizes single longitudinal mode output, composite photonic crystal structure is using primary using composite photonic crystal mode selection mechanism
Extension and common photoetching and lithographic technique preparation.
9. a kind of Wavelength stabilized laser light source based on photon crystal laser according to claim 2, which is characterized in that
Each layer of the low divergence single-mode photon crystal laser chip, longitudinal period and quasiperiodic photonic crystal structure passes through change
Material component and thickness realize refractive index cycle or variation paracycle, for the low divergence single-mode photon crystal of different wave length
Laser chip, material system is different, and the element of changed component is also different.
10. a kind of Wavelength stabilized laser light source based on photon crystal laser according to claim 2, feature exist
In the low divergence single-mode photon crystal laser chip, wherein the active layer positioned at the defect area includes: single, multiple
Quantum Well or quantum-dot structure.
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| CN114892261A (en) * | 2022-04-08 | 2022-08-12 | 中国科学院上海光学精密机械研究所 | Trivalent chromium ion doped gadolinium yttrium scandium aluminum garnet laser crystal, preparation method and application thereof |
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Application publication date: 20190830 |