CN114884474A - Power amplifier and electronic equipment - Google Patents
Power amplifier and electronic equipment Download PDFInfo
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- CN114884474A CN114884474A CN202210792142.0A CN202210792142A CN114884474A CN 114884474 A CN114884474 A CN 114884474A CN 202210792142 A CN202210792142 A CN 202210792142A CN 114884474 A CN114884474 A CN 114884474A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/26—Push-pull amplifiers; Phase-splitters therefor
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/26—Push-pull amplifiers; Phase-splitters therefor
- H03F3/265—Push-pull amplifiers; Phase-splitters therefor with field-effect transistors only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21106—An input signal being distributed in parallel over the inputs of a plurality of power amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21124—A parallel resonance circuit being coupled at the input of a power amplifier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21148—An output signal of a power amplifier being controlled by controlling current signal, e.g. by controlled current mirror
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The application provides a power amplifier and electronic equipment, and relates to the technical field of radio frequency power amplification. The power amplifier comprises a first loop and a second loop, wherein the first loop and the second loop respectively comprise a first-stage amplification module, a second-stage amplification module and a third-stage amplification module which are sequentially and electrically connected; the first-stage amplification modules of the first loop and the second loop are used for receiving differential signals; the differential signals comprise high-frequency-range differential signals and low-frequency-range differential signals; the first loop is used for amplifying and outputting the high-frequency-range differential signal; the second loop is used for amplifying and outputting the low-frequency-band differential signal. The power amplification device has the advantages that power amplification can be achieved in different frequency bands, high linearity is achieved in different frequency bands, and application scenes are wider.
Description
Technical Field
The present application relates to the field of radio frequency power amplification technologies, and in particular, to a power amplifier and an electronic device.
Background
With the continuous pursuit of low power consumption, low cost, wide coverage and wide connection of mobile wireless communication technology, the LPWAN internet of things comes into play. LPWAN is signaled by a base station or similar device as is the case with other network types (WLAN, 2/3/4/5G), but its location is quite different, emphasizing low power consumption, wide coverage, and sacrificing speed. The LPWAN internet of things includes many technical standards, and currently, the mainstream is: NB-IOT, LoRa, Sigfox, eMTC. The NB-IOT is one of them, and is named as Narrow Band IOT, namely the narrowband Internet of things.
The CMOS PA module (power amplifier) is an important component in NB _ IOT radio frequency signaling systems. High linearity, low power consumption and high efficiency are the mainstream of radio frequency power amplifier design, and the design mainly adopts Cascode (Cascode) and CS (common source) circuit structures. However, the power amplifier provided in the prior art can only amplify power in a single frequency band, and the application scenarios are limited.
In summary, the problem of the prior art is that the power amplifier can only amplify power in a single frequency band.
Disclosure of Invention
The present application provides a power amplifier and an electronic device, so as to solve the problem that the power amplifier in the prior art can only amplify power in a single frequency band.
In order to achieve the above purpose, the embodiments of the present application employ the following technical solutions:
on one hand, the embodiment of the application provides a power amplifier, which comprises a first loop and a second loop, wherein the first loop and the second loop respectively comprise a first-stage amplification module, a second-stage amplification module and a third-stage amplification module, and the first-stage amplification module, the second-stage amplification module and the third-stage amplification module are electrically connected in sequence; wherein the content of the first and second substances,
the first-stage amplification modules of the first loop and the second loop are used for receiving differential signals; wherein the differential signal comprises a high-band differential signal and a low-band differential signal;
the first-stage amplification module, the second-stage amplification module and the third-stage amplification module of the first loop are used for amplifying and outputting the high-frequency-range differential signal;
and the first-stage amplification module, the second-stage amplification module and the third-stage amplification module of the second loop are used for amplifying and outputting the low-frequency-band differential signal.
Optionally, the first-stage amplification module of the first loop and the second loop is integrated into a whole, and the first-stage amplification module comprises two first amplification units with the same structure, wherein,
each first amplifying unit receives a path of differential signal respectively, and outputs the differential signal after processing according to the selected amplification gain.
Optionally, the first amplifying unit includes an input switch tube, a multi-stage push-pull amplifying structure, a variable resistor array, and a high-frequency output port and a low-frequency output port, and the input switch tube is electrically connected to the multi-stage push-pull amplifying structure, the variable resistor array, the high-frequency output port, and the low-frequency output port, respectively; wherein the content of the first and second substances,
the input switch tube is used for receiving a path of differential signals;
the multi-stage push-pull type amplifying structure is used for determining the amplifying gain of the differential signal according to the on-off state;
when the differential signal is a high-frequency differential signal, the processed differential signal is output through the high-frequency output port;
and when the differential signal is a low-frequency differential signal, outputting the processed differential signal through the low-frequency output port.
Optionally, the second-stage amplification module includes an LC resonant network, a first bias network, a first variable capacitor array, a second amplification unit, and a first balun, where the LC resonant network, the first bias network, and the first variable capacitor array are respectively electrically connected to the second amplification unit, and an output end of the second amplification unit is further electrically connected to the first balun; wherein the content of the first and second substances,
the primary coil of the first balun is used as a load of the second amplifying unit.
Optionally, the second amplification unit comprises a plurality of groups of cascode circuits connected in parallel.
Optionally, the second-stage amplification module further includes a first envelope detector electrically connected to the output end of the second amplification unit.
Optionally, the third-stage amplification module includes a second variable capacitor array, a second bias network, a third amplification unit, and a second balun, where the second variable capacitor array is electrically connected to the second-stage amplification loop and the third amplification unit, the second bias network is electrically connected to the second amplification unit, and an output end of the third amplification unit is electrically connected to the second balun; wherein the content of the first and second substances,
the primary coil of the second balun is used as a load of the third amplifying unit.
Optionally, the second-stage amplification module includes a first variable capacitor array, and a capacitance value adjustment range of the first variable capacitor array is greater than a capacitance value adjustment range of the second variable capacitor array.
Optionally, the third-stage amplification module further includes a second envelope detector electrically connected to the output terminal of the third amplification unit.
On the other hand, the embodiment of the application also provides an electronic device, and the electronic device comprises the power amplifier.
Compared with the prior art, the method has the following beneficial effects:
the embodiment of the application provides a power amplifier and electronic equipment, wherein the power amplifier comprises a first loop and a second loop, the first loop and the second loop respectively comprise a first-stage amplification module, a second-stage amplification module and a third-stage amplification module, and the first-stage amplification module, the second-stage amplification module and the third-stage amplification module are sequentially and electrically connected; the first-stage amplification modules of the first loop and the second loop are used for receiving differential signals; the differential signals comprise high-frequency-band differential signals and low-frequency-band differential signals; the first-stage amplification module, the second-stage amplification module and the third-stage amplification module of the first loop are used for amplifying and outputting the high-frequency-band differential signal; the first-stage amplification module, the second-stage amplification module and the third-stage amplification module of the second loop are used for amplifying and outputting the low-frequency-band differential signal. Because the power amplifier who provides includes first return circuit and second return circuit in applying for, and can handle high frequency range difference and low-frequency range difference signal through first return circuit and second return circuit, consequently the power amplifier that this application provided can realize carrying out power amplification's effect at the frequency channel of difference, and the application scene is more extensive.
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and it will be apparent to those skilled in the art that other related drawings can be obtained from the drawings without inventive effort.
Fig. 1 is a block diagram of a power amplifier according to an embodiment of the present disclosure.
Fig. 2 is a circuit schematic diagram of a first-stage amplifying module according to an embodiment of the present disclosure.
Fig. 3 is a schematic circuit diagram of a power amplifier according to an embodiment of the present disclosure.
Fig. 4 is a circuit schematic diagram of a second amplifying unit according to an embodiment of the present disclosure.
Fig. 5 is a circuit schematic diagram of a first bias network according to an embodiment of the present disclosure.
Fig. 6 is a circuit schematic diagram of a third amplifying unit according to an embodiment of the present application.
In the figure: 100-a power amplifier; 110 — a first loop; 120-a second loop; 111-a first stage amplification module; 112-a second stage amplification module; 113-a third stage amplification module; 1111-a first amplification unit; 1112-input switching tube; 1113-first stage push-pull amplification structure; 1114 — a second stage push-pull amplification structure; 1115-a third stage push-pull amplification structure; 1116-variable resistor array.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, as presented in the figures, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only for distinguishing the description, and are not to be construed as indicating or implying relative importance.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
In the description of the present application, it should be noted that the terms "upper", "lower", "inner", "outer", and the like indicate orientations or positional relationships based on orientations or positional relationships shown in the drawings or orientations or positional relationships conventionally found in use of products of the application, and are used only for convenience in describing the present application and for simplification of description, but do not indicate or imply that the referred devices or elements must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present application.
In the description of the present application, it is also to be noted that, unless otherwise explicitly specified or limited, the terms "disposed" and "connected" are to be interpreted broadly, e.g., as being either fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
Some embodiments of the present application will be described in detail below with reference to the accompanying drawings. The embodiments described below and the features of the embodiments can be combined with each other without conflict.
As described in the background, the prior art has a problem that the power amplifier can only amplify power in a single frequency band.
In view of this, an embodiment of the present application provides a power amplifier, which amplifies and outputs differential signals in different frequency bands by using two loops.
The following is an exemplary illustration of the power amplifier provided in the present application:
as an optional implementation manner, please refer to fig. 1, the power amplifier 100 includes a first loop 110 and a second loop 120, both the first loop 110 and the second loop 120 include a first-stage amplification module 111, a second-stage amplification module 112, and a third-stage amplification module 113, and the first-stage amplification module 111, the second-stage amplification module 112, and the third-stage amplification module 113 are electrically connected in sequence; the first-stage amplification modules 111 of the first loop 110 and the second loop 120 are both configured to receive a differential signal; the differential signals comprise high-frequency-band differential signals and low-frequency-band differential signals; the first-stage amplification module 111, the second-stage amplification module 112 and the third-stage amplification module 113 of the first loop 110 are used for amplifying and outputting the high-frequency-band differential signal; the first-stage amplification module 111, the second-stage amplification module 112, and the third-stage amplification module 113 of the second loop 120 are configured to amplify and output the low-frequency-band differential signal.
As shown in fig. 1, on the one hand, when a high-frequency-band differential signal is input, the differential signal is signal-amplified by the first loop 110 located above; when the low-frequency-band differential signal is input, the differential signal is amplified through the second loop 120 located below, so that the differential signal is amplified in different frequency bands, and the method is suitable for more scenes. For example, in one implementation, the high band may be 1450MHz-2000MHz, the low band may be 450MHz-900MHz, and the power amplifier 100 may be switched in both bands. On the other hand, since the first loop 110 and the second loop 120 both include three stages of amplifying modules, the signal amplifying effect is better.
In one embodiment, the amplification processing of the differential signal is substantially the same in both the high-band and low-band, and therefore the circuit configuration between the first loop 110 and the second loop 120 is the same in order to simplify the circuit and facilitate the actual manufacturing.
In addition, in the example of the present application, the first stage amplification module 111 of the first loop 110 and the second loop 120 are integrated into a whole to reduce the occupied area of the first loop 110 and the second loop 120, and the first stage amplification module 111 includes two types:
first, the first-stage amplification modules 111 in the first loop 110 and the second loop 120 are independently arranged, that is, the first-stage amplification modules 111 in the first loop 110 and the second loop 120 are both electrically connected to the input interface, and when a high-frequency differential signal is input, the first-stage amplification module 111 in the first loop 110 is used for amplifying the signal; when the low-frequency band differential signal is input, the first stage amplification module 111 in the second loop 120 is used for signal amplification.
Secondly, the first-stage amplification modules 111 of the first loop 110 and the second loop 120 are the same module, that is, in this application, the number of the first-stage amplification modules 111 is only one, and on this basis, the first-stage amplification module 111 has two working frequency bands which can be switched, namely 1450MHz to 2000MHz in high frequency band and 450MHz to 900MHz in low frequency band, and both the high frequency band and the low frequency band are differential input and differential output. Therefore, when the high-frequency band differential signal is input, the first-stage amplification module 111 operates in the high-frequency band; when the low-band differential signal is input, the first-stage amplification module 111 operates in the low band.
When the first-stage amplification module 111 of the first loop 110 and the second loop 120 are the same module, as an implementation manner, the first-stage amplification module 111 is implemented by a three-stage push-pull amplification structure and a variable resistor array 1116. The push-pull type amplifying structure is an amplifying circuit formed by connecting two switching tubes with different polarities.
Referring to fig. 2, the first-stage amplifying module 111 includes two first amplifying units 1111 with the same structure, where each first amplifying unit 1111 receives one path of differential signal, processes the differential signal according to a selected amplifying gain, and outputs the processed differential signal. Here, the differential signal is a pair of signals having the same amplitude and opposite phases, and is generally represented by RFp and RFn. Therefore, the two first amplification units 1111 in the first-stage amplification module 111 are respectively used for receiving RFp and RFn. As shown in fig. 2, INN and INP represent a pair of differential signals, i.e., RFp and RFn, that are input.
As an implementation manner, please continue to refer to fig. 2, the first amplifying unit 1111 includes an input switch tube 1112, a multi-stage push-pull amplifying structure, a variable resistor array 1116, a high frequency output port and a low frequency output port, wherein the input switch tube 1112 is electrically connected to the multi-stage push-pull amplifying structure, the variable resistor array 1116, the high frequency output port and the low frequency output port, respectively; the input switch tube 1112 is configured to receive a path of differential signal; the multi-stage push-pull type amplification structure is used for determining the amplification gain of the differential signal according to the on-off state; the multi-stage push-pull amplification structure includes a first stage push-pull amplification structure 1113, a second stage push-pull amplification structure 1114, and a third stage push-pull amplification structure 1115. When the differential signal is a high-frequency differential signal, the processed differential signal is output through a high-frequency output port; and when the differential signal is a low-frequency differential signal, outputting the processed differential signal through a low-frequency output port.
Since the left and right first amplification units 1111 have the same structure and the left and right first amplification units 1111 operate in the same principle, the present application will be described with reference to a single-sided circuit as an example. The switching tubes M37 and M38 are input switching tubes 1112, and in the normal operating mode, the switching tube M37 or M38 is selected to be turned on to determine the operating frequency band, wherein M38 is turned on corresponding to the high frequency band mode, and M37 is turned on corresponding to the low frequency band mode. In the example of fig. 2, the switching tubes M37 and M38 are both NMOS tubes, the switching tube M37 is controlled by the driving signal G2p, and the switching tube M38 is controlled by the driving signal G2 hp. On this basis, when a high-frequency-band differential signal INN is input, the driving signal G2hp is controlled to be at a high level, and the driving signal G2p is at a low level, so that the switching tube M38 is turned on, and the switching tube M37 is turned off; on the contrary, when the low-frequency-band differential signal INN is input, the driving signal G2hp is controlled to be at a low level, and the driving signal G2p is at a high level, so that the switching tube M37 is turned on, and the switching tube M38 is turned off.
Similarly, in the symmetrical structure on the right side, the switch tube M39 and the switch tube M40 are also used as the input switch tube 1112 of the one path of differential signal INP, and the working principle thereof is the same, which is not described herein again.
As an alternative implementation manner, the multi-stage push-pull amplification structure provided by the present application includes three stages of push-pull amplification structures, namely, a first stage push-pull amplification structure 1113, a second stage push-pull amplification structure 1114, and a third stage push-pull amplification structure 1115. As shown in fig. 2, the switching tubes in the first stage push-pull amplifier 1113 are controlled by G2hn, G2hp, G2n, and G2p, and the second stage push-pull amplifier 1114 and the third stage push-pull amplifier 1115 are controlled by other signals. On the basis, when the switch tube M38 is turned on, the switch tube M1 and the switch tube M2 are also turned on; when the switch M37 is turned on, the switch M4 and the switch M5 are also turned on, and the second stage push-pull amplifier 1114 and the third stage push-pull amplifier 1115 are selectively turned on.
It can be understood that the adjustment of the on/off of the switching tubes M7, M8, M13, M14 can adjust the circuit gain in the high band mode, the adjustment of the switching tubes M10, M11, M16, M17 can adjust the circuit gain in the low band mode, and the high band and the low band have four-step gains for adjustment. For example, when a high-band differential signal is input, on the basis that the switching tubes M1 and M2 are turned on, the switching tubes M7, M8, M13 and M14 may be all turned on or all turned off, or the switching tubes M7 and M8 may be turned on and the switching tubes M13 and M14 may be turned off, so that the circuit gains are different.
Furthermore, the first amplification unit 1111 may also provide two operation mode selections, namely, a normal operation mode and a Bypass (Bypass) mode. In the bypass mode, the switching tubes M1-M18 are all turned off, and at this time, no gain may be provided in the bypass mode, and the input differential signal directly enters the second-stage amplification module 112. In a normal working mode, the first-stage push-pull amplification structure can be controlled to be conducted, the second-stage push-pull amplification structure and the third-stage push-pull amplification structure are selectively conducted, and then corresponding gains can be selected according to actual needs. In one implementation, the gain adjustment range is 36dB, the adjustment step is 6dB, e.g., the gain is 18dB when only the first stage push-pull amplification structure is on; when the first-stage push-pull amplification structure and the second-stage push-pull amplification structure are both conducted, the gain is 24dB, when the first-stage push-pull amplification structure and the third-stage push-pull amplification structure are both conducted, the gain is 30dB, and when the three-stage push-pull amplification structures are both conducted, the gain is 36 dB. Of course, when operating in the bypass mode, the gain is 0 dB.
In fig. 2, VRA denotes the variable resistor array 1116, HB _ OUTP and LB _ OUTP denote one high-frequency and low-frequency output ports of the differential signal, and HB _ OUTN and LB _ OUTN denote the other high-frequency and low-frequency output ports of the differential signal. By setting the variable resistor as a load, the adjustment of the gain of the first-stage amplification module 111 is more flexible. That is, in the first-stage amplification module 111, the gain of the first-stage amplification module 111 can be adjusted by selecting the working mode, controlling the second-stage push-pull amplification structure to turn off the third-stage push-pull amplification structure and adjust and control the resistance value in the variable resistor array 1116, so that the gain adjustment is more flexible, and the gain variation range is large.
Referring to fig. 3, in an implementation manner, the second-stage amplifying module 112 includes an LC resonant network, a first bias network, a first variable capacitor array, a second amplifying unit, and a first balun, where the LC resonant network, the first bias network, and the first variable capacitor array are respectively electrically connected to the second amplifying unit, and an output end of the second amplifying unit is further electrically connected to the first balun; the primary coil of the first balun is used as a load of the second amplifying unit.
As shown in fig. 3, PGA represents the first-stage amplification module 111, LC TANK represents the LC resonant network, BIAS1 represents the first BIAS network, VCA1_ LB and VCA1_ HB represent the first variable capacitor array, and Balun1_ LB and Balun1_ HB represent the first Balun of the second-stage amplification module 112 in the second loop 120 and the first loop 110, respectively.
As can be understood, when a high-frequency-band differential signal is input, the differential signal enters the second-stage amplification module 112 through the first-stage amplification module 111, and is subjected to signal amplification processing through the first loop 110 below in fig. 3; when the low-frequency band differential signal is input, the signal is amplified by the second loop 120 at the upper part in fig. 3, and certainly, when the first-stage amplification module 111 works in the bypass mode, the input differential signal directly enters the second amplification unit after passing through the LC resonant network.
As shown in fig. 3, in one implementation, the first stage amplification module 110 and the second stage amplification module 112 in the second loop 120 may share the same LC resonant network and the same first bias network, and in other implementations, the first loop 110 and the second loop 120 may also have separate LC resonant networks and first bias networks, which is not limited herein.
The LC resonant network described herein includes a capacitor and an inductor, optionally, the inductor L may be integrated inside a chip, and the resonant frequency of the controllable LC resonant network is adjusted to make the center frequency of the resonant network be the frequency of the input signal to achieve the effect of suppressing the harmonic transmission, thereby reducing the generation of intermodulation terms and improving the linearity of the whole power amplifier 100. The first bias network is used for providing bias voltage for the transistor in the second amplifying unit.
As an implementation manner, the second amplifying unit includes a plurality of sets of cascode circuits connected in parallel, for example, referring to fig. 4, the second amplifying unit is formed by connecting 11 sets of differential cascode circuits in parallel, and the control gain adjusting switches G0 to G10 can adjust the gain of the second amplifying unit. RFN and RFP represent signal input ports, the RFN and RFP are respectively and electrically connected with the gates of the transistors, and G0-G10 are respectively and electrically connected with the gates of the cascode transistors.
Optionally, the gain range of the second amplification unit can be adjusted by 40dB, the adjustment step is 6dB, the first bias network provides bias voltages for the cascode transistor and the common source input tube of the second amplification unit, and the bias voltages have a wide adjustment range.
Taking the bias network of the common-source input tube as an example for illustration, please refer to fig. 5, the first bias network may include a current mirror circuit and a corresponding output circuit, wherein the control ICTL0 to ICTL5 may adjust the magnitude of the output bias voltage, for example, it may control all of ICTL0 to ICTL5 to be low level, or only one or two signals of ICTL0 to ICTL5 to be low level, so as to control the switching tubes to be turned on to output different voltages. In the application, the adjusting range of the bias voltage is 400 mV-720 mV, and the control switches BANDN and BANDP can be selected to provide the bias voltage for the high-frequency or low-frequency differential circuit.
The bias circuit provided by the application has a large voltage regulation range, and the wide regulation range can offset the influence on the bias voltage caused by the parasitic of a layout and the deviation of the process, so that the bias voltage is kept near the optimal position of the linearity of the second-stage amplification module 112, and the linearity of the application is improved.
Therefore, after the input differential signal is subjected to signal amplification by the first-stage amplification module 111, the signal is transmitted to the second amplification unit through the LC resonant network, and is amplified again by the second amplification unit, and then is transmitted to the first balun after passing through the first variable capacitor array. The second-stage amplification module 112 further includes a filter capacitor C1, and the filter capacitor C1 is connected to the center tap of the primary winding of the first balun.
In the present application, the functions of the first balun mainly include:
1. the primary coil serves as a load for the second amplification unit circuit.
2. The primary coil and the first variable capacitor array form an LC Tank network (resonant network) with variable center frequency, and the resonant frequency of the LC Tank network can be adjusted according to the frequency of an input signal. For example, by adjusting the capacitance value of the first variable capacitance array, the resonant frequency of the LC Tank network can be adjusted.
3. The center tap of the primary couples the supply voltage to the second stage amplification block 112. As shown in fig. 3, the center tap of the first balun provides the supply voltage VDD 1.
4. The differential signal is coupled to the input of the third stage amplification block 113. As shown in fig. 3, the third stage amplification module 113 includes a second variable capacitor array and a third amplification unit, so that the first balun may couple the differential signal to the input terminals of the second variable capacitor array and the third amplification unit.
5. The secondary coil and the second variable capacitor array form an LC Tank network.
6. The center tap of the secondary coil is the input tube coupling grid bias voltage of the second variable capacitor array.
7. The second stage amplification block 112 outputs a composite of power.
8. Certain interstage matching is performed between the second stage amplification module 112 and the third stage amplification module 113.
And, in order to facilitate the detection of signal amplitude, so as to adjust the circuit. In one implementation, the second-stage amplification module 112 further includes a first envelope detector electrically connected to the output of the second amplification unit.
Wherein, as shown in fig. 3, the secondary coil of the first-stage balun is connected with the first envelope detector, the first envelope detector is responsible for detecting the amplitude of the output signal, and the output end of the first envelope detector is connected with the chip and then connected to the outside of the chip, so that the direct-current mismatch can be adjusted during the test, thereby reducing the leakage of the local oscillator in the output signal.
As an implementation manner, the third-stage amplification module 113 includes a second variable capacitor array, a second bias network, a third amplification unit, and a second balun, where the second variable capacitor array is electrically connected to the second-stage amplification loop and the third amplification unit, the second bias network is electrically connected to the third amplification unit, and an output end of the third amplification unit is electrically connected to the second balun; the primary coil of the second balun is used as a load of the third amplifying unit.
As shown in fig. 3, BIAS2 represents a second BIAS network, VCA2_ LB and VCA2_ HB represent a second variable capacitor array, and Balun2_ LB and Balun2_ HB represent a second Balun of the second loop 120 and the third stage amplification module 113 in the first loop 110, respectively.
The working principle of the third-stage amplification module 113 is basically the same as that of the second-stage amplification module 112, and therefore, the description of the same parts is omitted.
Referring to fig. 6, the third amplifying unit is formed by connecting 2 sets of differential cascode circuits in parallel, and the second bias network provides bias voltages for the cascode transistor and the common-source input transistor of the third amplifying unit, respectively. In fig. 6, G01 and G11 are both connected to the gate of the transistor, and RFP and RFN are also connected to the gate of the transistor.
The structure of the second bias network is basically the same as that of the first bias network, the specific transistor sizes are different, the bias voltage of the common-source input tube is obtained by coupling the center tap of the secondary coil of the first balun, and the bias voltage adjusting range of the common-source input tube of the third amplifying unit is 390 mV-760 mV.
In one implementation, the high-band variable capacitor array and the low-band variable capacitor array have the same capacitance value ratio, and the capacitance value adjusting range of the first variable capacitor array is larger than that of the second variable capacitor array. For example, the capacitance ratio of the first variable capacitance array is 1: 2: 4: 8: 16: 32, the capacitance-to-value ratio of the second variable capacitance array VCA2 is 1: 2. by setting the capacitance value of the first variable capacitor array to be in a wider adjusting range, the capacitance opening number of the first variable capacitor array and the capacitance opening number of the second variable capacitor array can be adjusted according to the input frequency during testing so as to obtain better linearity.
Of course, the third stage amplifying module 113 further includes a second envelope detector electrically connected to the output terminal of the third amplifying unit.
On this basis, the working principle of the third-stage amplification module 113 is as follows:
the differential signal after passing through the first balun is transmitted to the second variable capacitor array and the third amplifying unit, the differential signal after passing through the first balun is transmitted to the primary coil of the second balun after being amplified by the third amplifying unit, and the filter capacitor C2 is connected with the center tap of the primary coil of the second balun.
The second balun has the following main functions:
1. the primary coil serves as a load of the third amplifying unit.
2. The center tap of the primary coil couples the supply voltage for the third amplification unit.
3. And performing output impedance transformation.
4. And the output power of the third amplifying unit is synthesized.
5. And converting the differential output signal amplified by the third amplifying unit into a single-ended output signal, and transmitting the single-ended output signal to the antenna after passing through the matching network.
Based on the foregoing implementation manner, an embodiment of the present application further provides an electronic device, which includes the power amplifier 100 described above.
To sum up, the embodiment of the present application provides a power amplifier and an electronic device, where the power amplifier includes a first loop and a second loop, the first loop and the second loop both include a first-stage amplification module, a second-stage amplification module and a third-stage amplification module, and the first-stage amplification module, the second-stage amplification module and the third-stage amplification module are electrically connected in sequence; the first-stage amplification modules of the first loop and the second loop are used for receiving differential signals; the differential signals comprise high-frequency-band differential signals and low-frequency-band differential signals; the first-stage amplification module, the second-stage amplification module and the third-stage amplification module of the first loop are used for amplifying and outputting the high-frequency-band differential signal; the first-stage amplification module, the second-stage amplification module and the third-stage amplification module of the second loop are used for amplifying and outputting the low-frequency-band differential signal. Because the power amplifier who provides includes first return circuit and second return circuit in applying for, and can handle high frequency range difference and low-frequency range difference signal through first return circuit and second return circuit, consequently the power amplifier that this application provided can realize carrying out power amplification's effect at the frequency channel of difference, and the application scene is more extensive.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present application shall be included in the protection scope of the present application.
It will be evident to those skilled in the art that the present application is not limited to the details of the foregoing illustrative embodiments, and that the present application may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the application being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (10)
1. A power amplifier is characterized in that the power amplifier comprises a first loop and a second loop, wherein the first loop and the second loop respectively comprise a first-stage amplification module, a second-stage amplification module and a third-stage amplification module, and the first-stage amplification module, the second-stage amplification module and the third-stage amplification module are sequentially and electrically connected; wherein the content of the first and second substances,
the first-stage amplification modules of the first loop and the second loop are used for receiving differential signals; wherein the differential signal comprises a high band differential signal and a low band differential signal;
the first-stage amplification module, the second-stage amplification module and the third-stage amplification module of the first loop are used for amplifying and outputting the high-frequency-range differential signal;
and the first-stage amplification module, the second-stage amplification module and the third-stage amplification module of the second loop are used for amplifying and outputting the low-frequency-band differential signal.
2. The power amplifier of claim 1, wherein the first loop is integrated with a first stage amplification block of a second loop, the first stage amplification block comprising two first amplification units having the same structure, wherein,
each first amplifying unit receives a path of differential signal respectively, and outputs the differential signal after processing according to the selected amplification gain.
3. The power amplifier according to claim 2, wherein the first amplifying unit includes an input switching tube, a multi-stage push-pull amplifying structure, a variable resistor array, and a high frequency output port and a low frequency output port, the input switching tube being electrically connected to the multi-stage push-pull amplifying structure, the variable resistor array, the high frequency output port, and the low frequency output port, respectively; wherein the content of the first and second substances,
the input switch tube is used for receiving a path of differential signals;
the multi-stage push-pull type amplifying structure is used for determining the amplifying gain of the differential signal according to the on-off state;
when the differential signal is a high-frequency differential signal, the processed differential signal is output through the high-frequency output port;
and when the differential signal is a low-frequency differential signal, outputting the processed differential signal through the low-frequency output port.
4. The power amplifier of claim 1, wherein the second stage amplification module comprises an LC resonant network, a first bias network, a first variable capacitor array, a second amplification unit, and a first balun, the LC resonant network, the first bias network, and the first variable capacitor array each being electrically connected to the second amplification unit, respectively, the output of the second amplification unit being further electrically connected to the first balun; wherein the content of the first and second substances,
the primary coil of the first balun is used as a load of the second amplifying unit.
5. The power amplifier of claim 4, the second amplification unit comprising multiple sets of cascode circuits connected in parallel.
6. The power amplifier of claim 4, wherein the second stage amplification module further comprises a first envelope detector electrically connected to an output of the second amplification unit.
7. The power amplifier according to claim 1, wherein the third-stage amplification module comprises a second variable capacitor array, a second bias network, a third amplification unit, and a second balun, the second variable capacitor array is electrically connected to the second-stage amplification circuit and the third amplification unit, respectively, the second bias network is electrically connected to the third amplification unit, and an output terminal of the third amplification unit is electrically connected to the second balun; wherein the content of the first and second substances,
the primary coil of the second balun is used as a load of the third amplifying unit.
8. The power amplifier of claim 7, wherein the second stage amplification module comprises a first variable capacitance array having a capacitance adjustment range that is greater than a capacitance adjustment range of the second variable capacitance array.
9. The power amplifier of claim 7, the third stage amplification module further comprising a second envelope detector electrically connected to an output of the third amplification cell.
10. An electronic device, characterized in that the electronic device comprises a power amplifier according to any one of claims 1 to 9.
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Application publication date: 20220809 |