CN114883400A - HEMT radio frequency device and preparation method and application thereof - Google Patents
HEMT radio frequency device and preparation method and application thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 12
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- 229910001128 Sn alloy Inorganic materials 0.000 claims abstract description 48
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- 239000002184 metal Substances 0.000 claims abstract description 40
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
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- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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Abstract
The invention discloses a HEMT radio frequency device and a preparation method and application thereof. The HEMT radio frequency device comprises a substrate, an AlN nucleating layer, a GaN channel layer and an AlGaN barrier layer which are sequentially stacked, wherein one surface of the AlGaN barrier layer, which is far away from the GaN channel layer, is provided with Si 3 N 4 A passivation layer, a source TiAl/TiN alloy electrode, a drain TiAl/TiN alloy electrode and a gate metal electrode, wherein the gate metal electrode is partially embedded with Si 3 N 4 And a passivation layer. The HEMT radio frequency device has the advantages of small ohmic contact resistance, high frequency and efficiency, low production cost and the like, and the preparation process is simple and is suitable for large-scale industrial application.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a HEMT radio frequency device and a preparation method and application thereof.
Background
With the rapid development of microwave radio frequency technology, microwave devices need to face working conditions of high temperature, high voltage resistance, radiation resistance, high power, high efficiency, super bandwidth and the like, and traditional Si-based and GaAs-based power devices cannot meet corresponding performance requirements. Therefore, in recent years, the focus of research on microwave devices has turned to wide bandgap semiconductor material devices.
The third generation semiconductor material III group nitride has the advantages of large forbidden band width, high breakdown voltage, obvious polarization effect and the like, and a GaN-based high electron mobility transistor device represented by AlGaN/GaN HEMT has the characteristics of high breakdown voltage, high power, high temperature resistance, high efficiency and large current, and simultaneously has good microwave characteristics, and the third generation semiconductor material III group nitride has the prominent position in microwave high-power application.
For radio frequency devices, reducing the source-drain parasitic capacitance by reducing the ohmic contact resistance is an important measure for improving the maximum cut-off frequency and the maximum oscillation frequency of the device. The traditional gold-based ohmic contact metal layer is Ti/Al/Ni/Au, the source-drain ohmic contact resistance is larger, and the problems of high diffusivity of precious metal Au on the surface layer, irregular extension of TiN on the interface layer, unstable resistance value, rough electrode surface and the like exist in the high-temperature annealing process, so that the threshold voltage drift and the output conductance of the device are increased, and the electrical property and the frequency characteristic of the AlGaN/GaN HEMT device are seriously influenced. Hao et Al propose a method of combining Ti/Au/Al/Ni/Au metal layer with shallow trench etching technology, which realizes low contact resistance of 0.28 omega.mm and smooth surface morphology, so that the contact resistance of the device is better improved, but noble metal gold is expensive, the etching precision is difficult to control, etching damage is easy to introduce, and the performance of the device is undoubtedly influenced. Sun et Al propose non-etched Ti/Al/Ti/TiN structures to reduce the high cost of Au and the damage introduced by the etching process, but the contact resistance cannot be improved well.
Therefore, it is of great significance to develop a HEMT radio frequency device with low ohmic contact resistance, high frequency and efficiency and low production cost.
Disclosure of Invention
The invention aims to provide a HEMT radio frequency device and a preparation method and application thereof.
The technical scheme adopted by the invention is as follows:
a HEMT radio frequency device comprises a substrate, an AlN nucleating layer, a GaN channel layer and an AlGaN barrier layer which are sequentially stacked; one surface of the AlGaN barrier layer, which is far away from the GaN channel layer, is provided with Si 3 N 4 The passivation layer, the source TiAl/TiN alloy electrode, the leakage TiAl/TiN alloy electrode and the gate metal electrode; the gate metal electrode is partially embedded in Si 3 N 4 And a passivation layer.
Preferably, the substrate is selected from one of a diamond substrate, a SiC substrate, and a Si substrate.
Preferably, the AlN nucleation layer has a thickness of 1nm to 2 nm.
Preferably, the thickness of the GaN channel layer is 3 to 4 μm.
Preferably, the AlGaN barrier layer has a thickness of 20nm to 40 nm.
Preferably, said Si is 3 N 4 The thickness of the passivation layer is 50 nm-80 nm.
Preferably, the source TiAl/TiN alloy electrode is composed of a TiAl alloy layer and a TiNi alloy layer. Ohmic contact is formed between the source TiAl/TiN alloy electrode and the AlGaN barrier layer.
Preferably, the leaky TiAl/TiN alloy electrode consists of a TiAl alloy layer and a TiNi alloy layer. Ohmic contact is formed between the TiAl/TiN alloy leakage electrode and the AlGaN barrier layer.
Preferably, the gate metal electrode is composed of a Ni layer and an Au layer. And Schottky contact is formed between the gate metal electrode and the AlGaN barrier layer.
Preferably, the gate metal electrode is a T-shaped gate, and the gate length is 50nm to 100 nm.
The preparation method of the HEMT radio frequency device comprises the following steps:
1) epitaxially growing an AlN nucleating layer, a GaN channel layer, an AlGaN barrier layer and Si on a substrate in sequence 3 N 4 A passivation layer;
2) photoetching to expose the source TiAl/TiN alloy electrode area and the leakage TiAl/TiN alloy electrode area, and chemical etching to remove Si under the source TiAl/TiN alloy electrode area and the leakage TiAl/TiN alloy electrode area 3 N 4 Passivating layer, then carrying outPerforming magnetron sputtering coating and annealing to form a source TiAl/TiN alloy electrode and a leakage TiAl/TiN alloy electrode;
3) photoetching to expose the gate metal electrode region, and chemical etching to remove Si under the gate metal electrode region 3 N 4 And (5) carrying out evaporation and stripping on the passivation layer to form a gate metal electrode, thus obtaining the HEMT radio frequency device.
Preferably, the AlN nucleating layer is epitaxially grown in the step 1) by a Metal Organic Chemical Vapor Deposition (MOCVD) method, and the growth temperature is 900-1000 ℃.
Preferably, the epitaxial growth of the GaN channel layer in step 1) adopts an organic metal chemical vapor deposition method, and the growth temperature is 850-950 ℃.
Preferably, in the step 1), the epitaxially grown AlGaN barrier layer is grown at a temperature of 800 to 950 ℃ by an organometallic chemical vapor deposition method.
Preferably, Si is epitaxially grown in step 1) 3 N 4 The passivation layer adopts a Plasma Enhanced Chemical Vapor Deposition (PECVD) method, and the growth temperature is 230-320 ℃.
Preferably, the specific operations of the photolithography in the step 2) are: cleaning, gluing, pre-baking, exposing and developing.
Preferably, the chemical etching treatment in step 2) is specifically performed by: using HF and HN 4 Soaking the F in a Buffered Oxide Etchant (BOE) solution with the mass ratio of 1: 5-7 for 50-100 s.
Preferably, the magnetron sputtering coating in the step 2) specifically comprises the following operations: adopting medium frequency magnetron sputtering, adopting metal (Ti, Al)/TiN metal rotary target, vacuum degree P is less than or equal to 5.0 multiplied by 10 -3 Pa, introducing inert gas argon for glow cleaning, and sequentially sputtering TiAl/TiN alloy coating.
Preferably, the annealing in step 2) is specifically performed by: heating to 800-900 ℃ at the heating rate of 15-20 ℃/s in the protective atmosphere, and then keeping the temperature for 20-40 s.
Preferably, the specific operation of the photolithography in step 3) is: cleaning, gluing, pre-baking, exposing and developing.
Preferably, said step 3) isThe specific operation of the chemical corrosion treatment is as follows: using HF and HN 4 Soaking the F in a Buffered Oxide Etchant (BOE) solution with the mass ratio of 1: 5-7 for 50-100 s.
A microwave communication device comprises the HEMT radio frequency device.
The invention has the beneficial effects that: the HEMT radio frequency device has the advantages of small ohmic contact resistance, high frequency and efficiency, low production cost and the like, and the preparation process is simple and is suitable for large-scale industrial application.
Specifically, the method comprises the following steps:
1) the TiAl/TiN alloy is adopted to replace the traditional source and drain ohmic contact Ti/Al/Ni/Au metal stack, and because the surface layer has no Au atoms, the problems of high diffusion rate of Au, irregular extension of interface TiN, unstable ohmic contact resistance, rough electrode surface and the like do not exist;
2) the HEMT radio-frequency device adopts a non-noble metal TiAl/TiN alloy ohmic contact electrode, so that the preparation cost of the electrode is reduced;
3) the HEMT radio frequency device can reduce ohmic contact resistance and improve two-dimensional electron gas characteristics of the device, and is beneficial to realizing synchronous promotion of frequency and efficiency of the device.
Drawings
Fig. 1 is a schematic structural view of a HEMT radio frequency device of embodiment 1.
The attached drawings indicate the following: 10. a SiC substrate; 20. an AlN nucleating layer; 30. a GaN channel layer; 40. an AlGaN barrier layer; 50. si 3 N 4 A passivation layer; 60. a source TiAl/TiN alloy electrode; 70. leaking TiAl/TiN alloy electrodes; 80. t-shaped gate metal electrode.
Fig. 2 is a resistance diagram of the HEMT radio frequency device of example 1.
Detailed Description
The invention will be further explained and illustrated with reference to specific examples.
Example 1:
a HEMT radio frequency device (the structure schematic diagram is shown in figure 1) comprises a SiC substrate 10, an AlN nucleating layer 20, a GaN channel layer 30 and an AlGaN barrier layer 40 which are sequentially stacked; si is provided on the surface of the AlGaN barrier layer 40 away from the GaN channel layer 30 3 N 4 A passivation layer 50, a source TiAl/TiN alloy electrode 60, a leakage TiAl/TiN alloy electrode 70 and a T-shaped gate metal electrode 80; ohmic contact is formed between the source TiAl/TiN alloy electrode 60 and the leakage TiAl/TiN alloy electrode 70 and the AlGaN barrier layer 40; t-shaped gate metal electrode 80 with Si partially embedded 3 N 4 A passivation layer 50; a schottky contact is formed between the T-gate metal electrode 80 and the AlGaN barrier layer 40.
The preparation method of the HEMT radio frequency device comprises the following steps:
1) epitaxially growing an AlN nucleating layer with the thickness of 1nm on the SiC substrate by adopting an MOCVD method, wherein the growth temperature is 900 ℃;
2) epitaxially growing a GaN channel layer with the thickness of 3 mu m on the AlN nucleating layer by adopting an MOCVD method, wherein the growth temperature is 850 ℃;
3) epitaxially growing an AlGaN barrier layer with the thickness of 20nm on the GaN channel layer by adopting an MOCVD method, wherein the growth temperature is 800 ℃;
4) epitaxially growing Si with the thickness of 50nm on the AlGaN barrier layer by adopting a PECVD method 3 N 4 A passivation layer, wherein the growth temperature is 230 ℃;
5) cleaning, coating adhesive, prebaking, exposing and developing to expose the source TiAl/TiN alloy electrode region and the leakage TiAl/TiN alloy electrode region, and then adopting HF and HN 4 Soaking in BOE solution at a mass ratio of F to F of 1:7 for 100s, performing intermediate frequency magnetron sputtering, and rotating with metal (Ti, Al)/TiN target at a vacuum degree of not more than 5.0 × 10 -3 Pa, introducing inert gas argon for glow cleaning, sputtering TiAl/TiN alloy coating films in sequence, heating to 800 ℃ at the heating rate of 15 ℃/s in the nitrogen atmosphere, and keeping the temperature for 20s to form a source TiAl/TiN alloy electrode and a leakage TiAl/TiN alloy electrode;
6) cleaning, gluing, pre-baking, exposing and displayingExposing the gate metal electrode region by using HF and HN 4 Soaking the film for 100s in a Buffered Oxide Etchant (BOE) solution with the mass ratio of F being 1:7, then evaporating Ni/Au and stripping to form a T-shaped gate metal electrode with the gate length being 50nm, and obtaining the HEMT radio frequency device.
Example 2:
a preparation method of a HEMT radio frequency device comprises the following steps:
1) epitaxially growing an AlN nucleating layer with the thickness of 2nm on a Si substrate by adopting an MOCVD method, wherein the growth temperature is 1000 ℃;
2) epitaxially growing a GaN channel layer with the thickness of 4 mu m on the AlN nucleating layer by adopting an MOCVD method, wherein the growth temperature is 950 ℃;
3) epitaxially growing an AlGaN barrier layer with the thickness of 40nm on the GaN channel layer by adopting an MOCVD method, wherein the growth temperature is 950 ℃;
4) epitaxially growing Si with the thickness of 80nm on the AlGaN barrier layer by adopting a PECVD method 3 N 4 A passivation layer, wherein the growth temperature is 320 ℃;
5) cleaning, coating adhesive, prebaking, exposing and developing to expose the source TiAl/TiN alloy electrode region and the leakage TiAl/TiN alloy electrode region, and then adopting HF and HN 4 Soaking in BOE solution at a mass ratio of F of 1:5 for 50s, performing intermediate frequency magnetron sputtering, and rotating with Ti, Al and TiN metal target at a vacuum degree of not more than 5.0 × 10 -3 Pa, introducing inert gas argon for glow cleaning, sputtering TiAl/TiN alloy coating films in sequence, heating to 900 ℃ at the heating rate of 20 ℃/s in the nitrogen atmosphere, and keeping the temperature for 40s to form a source TiAl/TiN alloy electrode and a leakage TiAl/TiN alloy electrode;
6) cleaning, coating adhesive, prebaking, exposing and developing to expose the gate metal electrode region, and then adopting HF and HN 4 And F, soaking the HEMT for 50s in a Buffered Oxide Etchant (BOE) solution with the mass ratio of 1:5, evaporating Ni/Au, and stripping to form a T-shaped gate metal electrode with the gate length of 100nm, thus obtaining the HEMT radio frequency device.
Example 3:
a preparation method of a HEMT radio frequency device comprises the following steps:
1) epitaxially growing an AlN nucleating layer with the thickness of 2nm on a Si substrate by adopting an MOCVD method, wherein the growth temperature is 960 ℃;
2) epitaxially growing a GaN channel layer with the thickness of 4 mu m on the AlN nucleating layer by adopting an MOCVD method, wherein the growth temperature is 900 ℃;
3) epitaxially growing an AlGaN barrier layer with the thickness of 30nm on the GaN channel layer by adopting an MOCVD method, wherein the growth temperature is 920 ℃;
4) epitaxially growing Si with the thickness of 80nm on the AlGaN barrier layer by adopting a PECVD method 3 N 4 A passivation layer, wherein the growth temperature is 320 ℃;
5) cleaning, coating adhesive, prebaking, exposing and developing to expose the source TiAl/TiN alloy electrode region and the leakage TiAl/TiN alloy electrode region, and then adopting HF and HN 4 Soaking in BOE solution at a mass ratio of F of 1:5 for 50s, performing intermediate frequency magnetron sputtering, and rotating with Ti, Al and TiN metal target at a vacuum degree of not more than 5.0 × 10 -3 Pa, introducing inert gas argon for glow cleaning, sputtering TiAl/TiN alloy coating films in sequence, heating to 820 ℃ at the heating rate of 15 ℃/s in the nitrogen atmosphere, and keeping the temperature for 40s to form a source TiAl/TiN alloy electrode and a leakage TiAl/TiN alloy electrode;
6) cleaning, coating adhesive, prebaking, exposing and developing to expose the gate metal electrode region, and then adopting HF and HN 4 Soaking the film for 50s in a Buffered Oxide Etchant (BOE) solution with the mass ratio of F being 1:5, then evaporating Ni/Au and stripping to form a T-shaped gate metal electrode with the gate length being 90nm, and obtaining the HEMT radio frequency device.
And (3) performance testing:
the resistance diagram of the HEMT radio frequency device of example 1 is shown in fig. 2.
As can be seen from fig. 2: the contact resistance of the HEMT radio frequency device is as low as 0.26 omega mm.
Through the test (the test method is the same as that of the embodiment 1), the contact resistance of the HEMT radio frequency devices of the embodiment 2 and the embodiment 3 is 0.30 omega mm and 0.33 omega mm respectively, and the contact resistance is very small.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (10)
1. An HEMT radio frequency device is characterized in that the composition comprises a substrate, an AlN nucleating layer, a GaN channel layer and an AlGaN barrier layer which are sequentially stacked; one surface of the AlGaN barrier layer, which is far away from the GaN channel layer, is provided with Si 3 N 4 The passivation layer, the source TiAl/TiN alloy electrode, the leakage TiAl/TiN alloy electrode and the gate metal electrode; the gate metal electrode is partially embedded in Si 3 N 4 And a passivation layer.
2. The HEMT radio-frequency device of claim 1, wherein: the substrate is selected from one of a diamond substrate, a SiC substrate and a Si substrate.
3. The HEMT radio-frequency device of claim 1 or 2, wherein: the thickness of the AlN nucleating layer is 1 nm-2 nm; the thickness of the GaN channel layer is 3-4 mu m; the thickness of the AlGaN barrier layer is 20 nm-40 nm; said Si 3 N 4 The thickness of the passivation layer is 50 nm-80 nm.
4. The HEMT radio-frequency device of claim 1 or 2, wherein: the source TiAl/TiN alloy electrode consists of a TiAl alloy layer and a TiNi alloy layer; the TiAl/TiN alloy leaking electrode consists of a TiAl alloy layer and a TiNi alloy layer; the gate metal electrode is composed of a Ni layer and an Au layer.
5. The HEMT radio-frequency device of claim 1 or 2, wherein: the gate metal electrode is a T-shaped gate, and the gate length is 50 nm-100 nm.
6. The method for manufacturing the HEMT radio-frequency device according to any one of claims 1 to 5, comprising the steps of:
1) epitaxially growing an AlN nucleating layer, a GaN channel layer, an AlGaN barrier layer and Si on a substrate in sequence 3 N 4 A passivation layer;
2) photoetching to expose the source TiAl/TiN alloy electrode area and the leakage TiAl/TiN alloy electrode area, and chemical etching to remove Si under the source TiAl/TiN alloy electrode area and the leakage TiAl/TiN alloy electrode area 3 N 4 Carrying out magnetron sputtering coating and annealing on the passivation layer to form a source TiAl/TiN alloy electrode and a leakage TiAl/TiN alloy electrode;
3) photoetching to expose the gate metal electrode region, and chemical etching to remove Si under the gate metal electrode region 3 N 4 And (5) carrying out evaporation and stripping on the passivation layer to form a gate metal electrode, thus obtaining the HEMT radio frequency device.
7. The method for manufacturing an HEMT radio-frequency device according to claim 6, wherein: in the step 1), an organic metal chemical vapor deposition method is adopted for epitaxially growing the AlN nucleating layer, and the growth temperature is 900-1000 ℃; in the step 1), an organic metal chemical vapor deposition method is adopted for epitaxially growing the GaN channel layer, and the growth temperature is 850-950 ℃; in the step 1), an organic metal chemical vapor deposition method is adopted for epitaxially growing the AlGaN barrier layer, and the growth temperature is 800-950 ℃.
8. The method for manufacturing a HEMT radio-frequency device according to claim 6 or 7, wherein: step 1) epitaxial growth of Si 3 N 4 The passivation layer adopts a plasma enhanced chemical vapor deposition method, and the growth temperature is 230-320 ℃.
9. The method for manufacturing a HEMT radio-frequency device according to claim 6 or 7, wherein: the annealing in the step 2) comprises the following specific operations: heating to 800-900 ℃ at the heating rate of 15-20 ℃/s in the protective atmosphere, and then keeping the temperature for 20-40 s.
10. Microwave communication equipment, characterized in that the composition comprises a HEMT radio-frequency device according to any one of claims 1-5.
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| CN202210358702.1A Pending CN114883400A (en) | 2022-04-07 | 2022-04-07 | HEMT radio frequency device and preparation method and application thereof |
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|---|---|
| CN (1) | CN114883400A (en) |
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2022
- 2022-04-07 CN CN202210358702.1A patent/CN114883400A/en active Pending
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