CN114864710A - IBC solar cell and manufacturing method thereof - Google Patents
IBC solar cell and manufacturing method thereof Download PDFInfo
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- CN114864710A CN114864710A CN202210375051.7A CN202210375051A CN114864710A CN 114864710 A CN114864710 A CN 114864710A CN 202210375051 A CN202210375051 A CN 202210375051A CN 114864710 A CN114864710 A CN 114864710A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000002161 passivation Methods 0.000 claims abstract description 66
- 230000005641 tunneling Effects 0.000 claims abstract description 35
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 19
- 238000010030 laminating Methods 0.000 claims abstract description 4
- 230000004888 barrier function Effects 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 3
- 239000002245 particle Substances 0.000 abstract description 17
- 230000008569 process Effects 0.000 abstract description 11
- 238000005215 recombination Methods 0.000 abstract description 6
- 230000006798 recombination Effects 0.000 abstract description 6
- 239000002019 doping agent Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a manufacturing method of an IBC solar cell, which comprises the step of sequentially laminating a tunneling passivation layer, a doping layer and an electrode layer on a crystalline silicon substrate layer, wherein the tunneling passivation layer is formed into a quantum well structure. The method solves the problem that in the manufacturing process of the IBC solar cell, after the doping source particles of the doping region formed in advance are influenced by the high temperature of the subsequent doping process, the doping source particles directly enter the crystalline silicon substrate through the tunneling passivation layer to cause Auger recombination on the surface of the crystalline silicon substrate.
Description
Technical Field
The invention relates to the technical field of photovoltaic power generation, in particular to an IBC solar cell and a manufacturing method thereof.
Background
In the prior art, a stacked structure of ultra-thin silicon oxide and doped polysilicon (Poly-Si) is applied to a tunneling passivation contact (TOPCon) cell structure formed on the surface of a crystalline silicon substrate, although a good tunneling passivation effect can be obtained. However, when the tunneling passivation layer structure is applied to the IBC cell structure, due to the different doping sequences of the P-type doped region and the N-type doped region of the back-side doped layer, the dopant source particles of the doped region formed first are affected by the high temperature of the doping process performed later, and the dopant source directly enters the crystalline silicon substrate through the existing tunneling passivation layer (ultra-thin silicon oxide) too much. This causes auger recombination at the surface of the crystalline silicon substrate, which loses the tunneling passivation properties. If the thickness of the tunneling passivation layer is simply increased, the tunneling effect of carriers is destroyed, and the surface passivation property is reduced. On the other hand, the contact resistance of the whole battery is increased.
Disclosure of Invention
In view of the defects in the prior art, in one aspect, the present invention provides a method for manufacturing an IBC solar cell, including sequentially forming a tunneling passivation layer, a doping layer, and an electrode layer on a crystalline silicon substrate layer, where the tunneling passivation layer is formed as a quantum well structure.
Preferably, the quantum well structure comprises n barrier layers and n-1 well layers which are alternately stacked; wherein n is more than or equal to 2.
Preferably, before forming the electrode layer on the doped layer, the method includes:
grooving the doped layer to enable a P-type doped region and an N-type doped region of the doped layer to be arranged at intervals;
depositing and forming a back passivation layer on the doping layer, and enabling the back passivation layer to cover the P-type doping region, the N-type doping region and the interval region between the P-type doping region and the N-type doping region.
Preferably, the forming of the electrode layer includes:
and respectively forming the electrode layers on the back passivation layer positioned above the P-type doped region and the back passivation layer positioned above the N-type doped region, and enabling the electrode layers to penetrate through the back passivation layer to be respectively contacted with the P-type doped region and the N-type doped region.
Preferably, the manufacturing method further comprises: and sequentially laminating a front passivation layer and a front antireflection layer on one side of the crystalline silicon substrate layer, which is back to the tunneling passivation layer.
In another aspect of the present invention, an IBC solar cell is provided, which includes a crystalline silicon substrate layer, a tunneling passivation layer, a doping layer, and an electrode layer, which are sequentially stacked, where the tunneling passivation layer is formed by a quantum well structure.
Preferably, the quantum well structure comprises n barrier layers and n-1 well layers which are alternately stacked; wherein n is more than or equal to 2.
Preferably, the doping layer comprises a P-type doping region and an N-type doping region which are adjacent to each other, and the P-type doping region and the N-type doping region are arranged at intervals.
Preferably, a front passivation layer and a front antireflection layer are sequentially stacked on one side of the crystalline silicon substrate layer facing away from the tunneling passivation layer.
Preferably, a back passivation layer is arranged between the doping layer and the electrode layer, a through hole is formed in the back passivation layer, and the electrode layer is in contact with the doping layer through the through hole.
Compared with the prior art, in the manufacturing process of the IBC solar cell, the tunneling passivation layer is formed into the quantum well structure, so that on one hand, when the doping layer is formed, the doping source particles of the doping region formed in advance are subjected to heat (more than or equal to 850 ℃) generated in the forming process of the other doping region formed later, and then pass through a barrier layer of the quantum well structure, and part of the doping source particles enter the potential well layer to dope the potential well layer. In the doping process, the part of the doping source particles is exhausted by the energy provided by the high-temperature environment, so that the part of the doping source particles cannot pass through the other barrier layer again after entering the potential well layer of the quantum well structure, and are retained in the potential well layer of the quantum well structure, so that the problem of Auger recombination caused by the fact that the doping source particles enter the crystalline silicon substrate is solved. On the other hand, the photon-generated carriers directly penetrate through the tunneling passivation layer of the invention through the tunneling effect, so that the solar cell manufactured by the manufacturing method of the IBC solar cell of the invention has lower contact resistance.
Drawings
FIGS. 1a to 1f are process diagrams of an IBC solar cell according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an IBC solar cell according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in the drawings and described in accordance with the drawings are exemplary only, and the invention is not limited to these embodiments.
It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and/or processing steps closely related to the scheme according to the present invention are shown in the drawings, and other details not so relevant to the present invention are omitted.
In view of the problems of the prior art described in the background, the present invention provides the following embodiments.
Example 1
In order to prevent the problem that auger recombination is caused on the surface of a crystalline silicon substrate layer after a tunneling passivation layer is penetrated by doping source particles of a doping region formed first due to the influence of high temperature and high pressure of a doping process performed later in the manufacturing process of the IBC solar cell, the tunneling passivation layer is formed into a quantum well structure in the manufacturing process of the embodiment. In the process of forming the quantum well structure, the barrier width (or the thickness of the potential well layer) of the barrier layer needs to be adjusted, so that the barrier layer of the quantum well structure can block the doping source particles of the doping layer, on the other hand, potential well layer materials with different forbidden band widths are reasonably selected according to the needs, the depth of the potential well layer is adjusted, the trapping effect of the potential well layer on the photogenerated carriers is increased, the photogenerated carriers directly penetrate through the tunneling passivation layer of the embodiment through the tunneling effect, and the formed IBC solar cell has good surface passivation characteristics and lower contact recombination and contact resistance. It should be noted that means for specifically adjusting the barrier width of the barrier layer, the thickness of the well layer, and the depth of the well layer are well known in the art, and therefore, are not described herein in detail.
As shown in fig. 1a to fig. 1f, the method for manufacturing an IBC solar cell of the present embodiment includes:
in step S1, as shown in fig. 1a, a tunnel passivation layer 2 is formed on the surface of the crystalline silicon substrate layer 1. Specifically, a first barrier layer 21, a well layer 22, and a second barrier layer 23 are sequentially stacked and formed on the surface of the crystalline silicon substrate layer 1 to form the tunnel passivation layer 2.
Step S2, as shown in fig. 1e, sequentially stacking a doped layer 3 and an electrode layer 4 on a side of the tunneling passivation layer 2 facing away from the crystalline silicon substrate layer 1.
As shown in fig. 1b to 1d, before forming the electrode layer 4 on the doped layer 3, the method includes:
step S2a, performing trench opening on the doped layer 3, so that the P-type doped region 31 and the N-type doped region 32 of the doped layer 3 are spaced apart from each other.
Step S2b, depositing a back passivation layer 7 on the doped layer 3, so that the back passivation layer 7 covers the P-type doped region 31 and the N-type doped region 32 and the gap region between the P-type doped region 31 and the N-type doped region 32.
As shown in fig. 1e, forming the electrode layer 4 includes:
step S2c, forming the electrode layer 4 on the back passivation layer 7 above the P-type doped region 31 and the back passivation layer 7 above the N-type doped region 32, respectively, and making the electrode layer 4 pass through the back passivation layer 7 to contact the P-type doped region 31 and the N-type doped region 32, respectively.
Further, in order to improve the performance of the IBC solar cell, the manufacturing method of this embodiment further includes:
step S3, as shown in fig. 1f, sequentially stacking a front passivation layer 5 and a front anti-reflection layer 6 on the side of the crystalline silicon substrate layer 1 facing away from the first barrier layer 21.
In the embodiment, in the process of forming the doping layer, the dopant source particles in the previously formed doping region (e.g., P-type doping region) are subjected to heat (equal to or more than 850 ℃) generated in the process of forming the subsequently formed another doping region (e.g., N-type doping region), so as to pass through the second barrier layer of the quantum well structure, wherein a part of the dopant source particles enter the well layer to dope the well layer. In the doping process, the part of the dopant source particles is depleted of the energy provided by the high-temperature environment, so that the part of the dopant source particles cannot pass through the first barrier layer again after entering the well layer of the quantum well structure, and therefore the part of the dopant source particles are retained in the well layer of the quantum well structure of the embodiment, and the problem of auger recombination caused by the fact that the dopant source particles of a doped region formed in advance enter the crystalline silicon substrate is solved. On the other hand, the photogenerated carriers directly penetrate through the tunneling passivation layer of the present embodiment by a tunneling effect, so that the solar cell manufactured by the method for manufacturing the IBC solar cell of the present embodiment has a lower contact resistance.
It should be noted that, according to actual needs, the quantum well structure of the present embodiment may include a plurality of barrier layers and a plurality of well layers that are alternately stacked. The number of the barrier layers is n (n is more than or equal to 2), and the number of the potential well layers is n-1. In this embodiment, the blocking effect of the tunnel passivation layer for the dopant source particles of the previously formed doped region, which is affected by the high temperature environment (≧ 850 ℃) of the post doping process, can be improved by forming additional barrier layers and well layers.
Example 2
The present embodiment provides an IBC solar cell, which can be fabricated by the method of embodiment 1.
As shown in fig. 2, the IBC solar cell of the present embodiment includes a crystalline silicon substrate layer 1', a tunneling passivation layer 2', a doping layer 3 'and an electrode layer 4' sequentially stacked. Wherein the tunneling passivation layer 2' is formed of a quantum well structure.
Specifically, as shown in fig. 2, in the present embodiment, the tunnel passivation layer 2' includes a first barrier layer 21', a well layer 22', and a second barrier layer 23' sequentially stacked and disposed on the surface of the crystalline silicon substrate layer 1 '. The doped layer 3 'and the electrode layer 4' are sequentially stacked and disposed on a side of the second barrier layer 23 'facing away from the well layer 22'. The doped layer 3' includes a P-type doped region 31' and an N-type doped region 32' adjacent to each other, and the P-type doped region 31' and the N-type doped region 32' are spaced apart from each other.
Preferably, as shown in fig. 2, in order to further improve the performance of the IBC solar cell of the present embodiment, in the present embodiment, a front passivation layer 5 'and a front anti-reflective layer 6' are sequentially stacked on a side of the crystalline silicon substrate layer 1 'facing away from the tunneling passivation layer 2'. Furthermore, a back passivation layer 7' is provided between the doped layer 3' and the electrode layer 4 '. The back passivation layer 7' is provided with a through hole, and the electrode layer 4' is in contact with the doped layer 3' through the through hole. As an optional configuration, a back antireflection layer (not shown in the figure) may be additionally disposed on the back passivation layer 7', a through hole is also formed in the back antireflection layer, and the electrode layer 4' sequentially passes through the back antireflection layer and the back passivation layer 7 'to contact the doping layer 3'.
Alternatively, the quantum well structure of the present embodiment may include n barrier layers and n-1 well layers alternately stacked; wherein n is more than or equal to 2.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. The manufacturing method of the IBC solar cell comprises the step of sequentially laminating a tunneling passivation layer, a doping layer and an electrode layer on a crystalline silicon substrate layer, and is characterized in that the tunneling passivation layer is formed into a quantum well structure.
2. The method of manufacturing according to claim 1, wherein the quantum well structure comprises n barrier layers and n-1 well layers alternately stacked; wherein n is more than or equal to 2.
3. The method of claim 2, wherein forming the electrode layer on the doped layer comprises:
grooving the doped layer to enable a P-type doped region and an N-type doped region of the doped layer to be arranged at intervals;
depositing and forming a back passivation layer on the doping layer, and enabling the back passivation layer to cover the P-type doping region, the N-type doping region and the interval region between the P-type doping region and the N-type doping region.
4. The method of manufacturing according to claim 3, wherein forming the electrode layer comprises:
and respectively forming the electrode layers on the back passivation layer positioned above the P-type doped region and the back passivation layer positioned above the N-type doped region, and enabling the electrode layers to penetrate through the back passivation layer to be respectively contacted with the P-type doped region and the N-type doped region.
5. The method of manufacturing according to any one of claims 1 to 4, further comprising: and sequentially laminating a front passivation layer and a front antireflection layer on one side of the crystalline silicon substrate layer, which is back to the tunneling passivation layer.
6. The IBC solar cell comprises a crystalline silicon substrate layer, a tunneling passivation layer, a doping layer and an electrode layer which are sequentially stacked, and is characterized in that the tunneling passivation layer is formed by a quantum well structure.
7. The IBC solar cell of claim 6, wherein the quantum well structure comprises n barrier layers and n-1 well layers stacked alternately; wherein n is more than or equal to 2.
8. The IBC solar cell of claim 6 or 7, wherein the doped layer comprises a P-type doped region and an N-type doped region adjacent to each other, and the P-type doped region and the N-type doped region are spaced apart from each other.
9. The IBC solar cell of claim 8, wherein a front passivation layer and a front antireflection layer are sequentially stacked on a side of the crystalline silicon substrate layer facing away from the tunneling passivation layer.
10. The IBC solar cell of claim 9, wherein a back passivation layer is disposed between the doped layer and the electrode layer, wherein a through hole is opened in the back passivation layer, and the electrode layer contacts the doped layer through the through hole.
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| CN202210375051.7A CN114864710A (en) | 2022-04-11 | 2022-04-11 | IBC solar cell and manufacturing method thereof |
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| CN202210375051.7A CN114864710A (en) | 2022-04-11 | 2022-04-11 | IBC solar cell and manufacturing method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116344632A (en) * | 2023-02-17 | 2023-06-27 | 扬州大学 | POLO-IBC passivation contact battery and preparation method thereof |
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|---|---|---|---|---|
| CN106098811A (en) * | 2016-06-21 | 2016-11-09 | 刘爱民 | A kind of high efficiency crystal-silicon solar cell and preparation method thereof |
| CN210575969U (en) * | 2019-06-24 | 2020-05-19 | 泰州隆基乐叶光伏科技有限公司 | P-type crystalline silicon solar cell |
| CN113921625A (en) * | 2021-09-30 | 2022-01-11 | 泰州隆基乐叶光伏科技有限公司 | Back contact battery and manufacturing method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106098811A (en) * | 2016-06-21 | 2016-11-09 | 刘爱民 | A kind of high efficiency crystal-silicon solar cell and preparation method thereof |
| CN210575969U (en) * | 2019-06-24 | 2020-05-19 | 泰州隆基乐叶光伏科技有限公司 | P-type crystalline silicon solar cell |
| CN113921625A (en) * | 2021-09-30 | 2022-01-11 | 泰州隆基乐叶光伏科技有限公司 | Back contact battery and manufacturing method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116344632A (en) * | 2023-02-17 | 2023-06-27 | 扬州大学 | POLO-IBC passivation contact battery and preparation method thereof |
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