CN114864520A - GaN half-bridge power device and preparation method thereof - Google Patents

GaN half-bridge power device and preparation method thereof Download PDF

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Publication number
CN114864520A
CN114864520A CN202210484392.8A CN202210484392A CN114864520A CN 114864520 A CN114864520 A CN 114864520A CN 202210484392 A CN202210484392 A CN 202210484392A CN 114864520 A CN114864520 A CN 114864520A
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power device
gan
gan power
driving chip
substrate
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寇玉霞
袁芳
郭玉洁
常育宽
杨沛
张旭
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Zhejiang Haike Electronic Technology Co ltd
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Institute of Semiconductors of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/165—Containers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Computer Hardware Design (AREA)
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Abstract

The invention provides a GaN half-bridge power device, which comprises: the surface of the substrate is provided with a plurality of mounting areas, and each mounting area is provided with a plurality of electric contacts and connecting lines among the electric contacts; the driving chip, the first GaN power device and the second GaN power device are respectively arranged in the mounting area and are respectively and electrically connected with the electric contact through a plurality of welding balls, and the driving chip comprises a high-side channel and a low-side channel which are respectively and electrically connected with the first GaN power device and the second GaN power device; the filling glue is filled in gaps among the driving chip, the first GaN power device, the second GaN power device and the substrate and extends upwards to the periphery of the lower parts of the driving chip, the first GaN power device and the second GaN power device; and the graphite film covers the substrate and surrounds the filling glue extending to the periphery of the lower parts of the driving chip, the first GaN power device and the second GaN power device so as to realize heat conduction and electric isolation among the driving chip, the first GaN power device and the second GaN power device.

Description

GaN half-bridge power device and preparation method thereof
Technical Field
The invention belongs to the technical field of power module packaging design, and particularly relates to a GaN half-bridge power device and a preparation method thereof.
Background
With the progress of science and technology, people have higher and higher requirements on high-frequency and high-efficiency power converters, and the performance of the traditional silicon-based (Si) power device approaches the theoretical limit due to the limitation of materials, so that the promotion space is small. Gallium Nitride (GaN) is a representative of the third-generation wide bandgap semiconductor material, has the advantages of small on-resistance, high voltage resistance, high switching frequency, low junction-shell thermal resistance and high bearable junction temperature, can meet the application requirements of a power converter on high power, high frequency and high integration level, and has wide application prospects.
GaN half-bridge power ware is as an application form of GaN power device, with the encapsulation of two half-bridge structure's GaN power device and half-bridge grid driver together, compares with traditional discrete packaging structure, does not have external lead, has reduced parasitic capacitance and inductance, produces voltage peak disturbing power drive signal on parasitic inductance when avoiding in the power return circuit through transient state heavy current, has improved high frequency working property. Meanwhile, the heat dissipation problem is caused by the small size of the GaN half-bridge power device and the application scene of high-frequency and large-current loads, and when the GaN power device is under the working condition of high-frequency and large-current loads, the temperature of the GaN power device is increased, so that the on-resistance of the GaN device is increased, and the high-frequency switching characteristic is influenced.
And in the encapsulation of gaN half-bridge power ware, for the maximum reduction parasitic parameter influence, half-bridge grid driver and gaN power device all adopt the flip-chip mode to install on the base plate, and the line is walked the line through the base plate is inside between the two and is realized, has aggravated the chip heat dissipation problem.
In the prior art, a method for improving heat dissipation of a chip comprises the following steps: changing the substrate material or adding metal heat sinks. The substrate material with better heat conductivity is used when the substrate material is changed, the substrate used by most of the packaging structures is an epoxy glass cloth laminated board (FR-4), the heat conductivity coefficient is 0.3W/(m.K), the heat conductivity is poor, and the heat conductivity coefficient of the ceramic substrate is higher, wherein the heat conductivity coefficient of an aluminum nitride (AlN) substrate can reach about 200W/(m.K), but the ceramic substrate, especially the AlN substrate, has higher cost, slightly poor mechanical property, higher difficulty in implementing multilayer wiring and larger limitation in small-size multi-chip packaging. The method can quickly conduct the heat of the chip out and realize better heat dissipation performance, but an additional buffer layer is required to be designed between the chip and the copper heat sink to realize stress matching, so that the process complexity and the weight of a packaging body are increased.
Disclosure of Invention
Aiming at the problems, the invention provides a GaN half-bridge power device and a preparation method thereof.
To achieve the above object, the present invention provides a GaN half-bridge power device, comprising:
the surface of the substrate is provided with a plurality of mounting areas, and each mounting area is provided with a plurality of electric contacts and connecting lines connected among the corresponding electric contacts;
the driving chip, the first GaN power device and the second GaN power device are respectively arranged in the mounting area and are respectively and electrically connected with the electric contact through a plurality of welding balls, and the driving chip comprises a high-side channel and a low-side channel which are respectively and electrically connected with the first GaN power device and the second GaN power device;
the filling glue is filled in gaps among the driving chip, the first GaN power device, the second GaN power device and the substrate and extends upwards to the periphery of the lower parts of the driving chip, the first GaN power device and the second GaN power device; and
and the graphite film covers the substrate and surrounds the filling glue extending to the periphery of the lower parts of the driving chip, the first GaN power device and the second GaN power device so as to realize heat conduction and electric isolation among the driving chip, the first GaN power device and the second GaN power device.
According to the embodiment of the invention, the filling adhesive is made of heat conducting and electric insulating materials, and covers each solder ball, so that the stress of the solder ball is reduced, and the thermal fatigue life of the solder ball is prolonged.
According to the embodiment of the invention, the first GaN power device and the second GaN power device respectively comprise a grid electrode, a source electrode and a drain electrode, the output end of the high-side channel of the driving chip is electrically connected with the grid electrode of the first GaN power device, the output end of the low-side channel of the driving chip is electrically connected with the grid electrode of the second GaN power device, and the drain electrode of the second GaN power device is electrically connected with the source electrode of the first GaN power device.
According to an embodiment of the present invention, an input end of a high-side channel of a driver chip is adapted to receive a high-side digital control signal;
the input end of the low-side channel of the driving chip is suitable for receiving a low-side digital control signal;
the drain electrode of the first GaN power device is electrically connected with the high-level voltage end;
and the source electrode of the second GaN power device is electrically connected with the grounding terminal.
According to an embodiment of the invention, the substrate is made of an epoxy glass cloth laminate.
According to an embodiment of the present invention, the graphite film is attached to the surface of the substrate.
The invention also provides a preparation method of the GaN half-bridge power device, which comprises the following steps:
providing a substrate;
welding the driving chip, the first GaN power device and the second GaN power device to an electric contact of the substrate through welding balls;
opening holes in the positions of the graphite film corresponding to the driving chip, the first GaN power device and the second GaN power device;
attaching the perforated graphite film to the upper surface of the substrate;
filling gaps among the driving chip, the first GaN power device, the second GaN power device and the substrate with filling glue;
and preparing a packaging shell on the graphite film to package the driving chip, the first GaN power device and the second GaN power device.
According to an embodiment of the present invention, the driver chip, the first GaN power device, and the second GaN power device are flip-chip bonded on electrical contacts on the substrate.
According to an embodiment of the present invention, the driving chip is packaged using a Ball Grid Array (BGA), and the first GaN power device and the second GaN power device are packaged using a Land Grid Array (LGA) before the driving chip, the first GaN power device and the second GaN power device are soldered to the electrical contacts of the substrate by the solder balls.
According to the GaN half-bridge power device provided by the invention, the heat dissipation structure uses the graphite film with high heat conductivity, the substrate is subjected to heat dissipation by utilizing the characteristic that the graphite film has ultrahigh heat conductivity in a horizontal plane, thermal coupling is formed among the half-bridge special driving chip, the first GaN power device, the second GaN power device and the heat conduction graphite film by utilizing the heat conduction filling adhesive, heat generated in the work is conducted to the heat conduction graphite film, the heat dissipation area is increased, the heat dissipation capacity of packaging of the GaN half-bridge power device is improved, and the rapid heat dissipation of the device is realized.
Drawings
FIG. 1 schematically illustrates a cross-sectional view of a GaN half-bridge power device, according to an embodiment of the invention;
FIG. 2 schematically illustrates a top view of a GaN half-bridge power device according to an embodiment of the invention;
fig. 3 schematically illustrates a top view of a graphite film in a GaN half-bridge power device according to an embodiment of the present invention;
FIG. 4 schematically illustrates a circuit schematic of a GaN half-bridge power device according to an embodiment of the invention;
fig. 5A-5F schematically illustrate fabrication process diagrams of GaN half-bridge power devices according to embodiments of the present invention.
[ description of the drawings ]
1-a substrate; 2-solder balls; 3-a graphite film; 4-filling glue; 5, driving a chip; 6-a first GaN power device; 7-a second GaN power device; 8-packaging the shell.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
The invention provides a GaN half-bridge power device, which comprises:
the surface of the substrate is provided with a plurality of mounting areas, and each mounting area is provided with a plurality of electric contacts and connecting lines connected among the corresponding electric contacts;
the driving chip, the first GaN power device and the second GaN power device are respectively arranged in the mounting area and are respectively and electrically connected with the electric contact through a plurality of welding balls, and the driving chip comprises a high-side channel and a low-side channel which are respectively and electrically connected with the first GaN power device and the second GaN power device;
the filling glue is filled in gaps among the driving chip, the first GaN power device, the second GaN power device and the substrate and extends upwards to the periphery of the lower parts of the driving chip, the first GaN power device and the second GaN power device; and
and the graphite film covers the substrate and surrounds the graphite film extending to the periphery of the lower parts of the driving chip, the first GaN power device and the second GaN power device so as to realize heat conduction and electric isolation among the driving chip, the first GaN power device and the second GaN power device.
According to the GaN half-bridge power device provided by the invention, the heat dissipation structure uses the graphite film with high heat conductivity, the substrate is subjected to heat dissipation by utilizing the characteristic that the graphite film has ultrahigh heat conductivity in a horizontal plane, thermal coupling is formed among the half-bridge special driving chip, the first GaN power device, the second GaN power device and the heat conduction graphite film by utilizing the heat conduction filling adhesive, heat generated in the work is conducted to the heat conduction graphite film, the heat dissipation area is increased, the heat dissipation capacity of packaging of the GaN half-bridge power device is improved, and the rapid heat dissipation of the device is realized.
FIG. 1 schematically illustrates a cross-sectional view of a GaN half-bridge power device, according to an embodiment of the invention;
fig. 2 schematically illustrates a top view of a GaN half-bridge power device according to an embodiment of the present invention.
As shown in fig. 1-2, a GaN half-bridge power device includes: the device comprises a substrate 1, a driving chip 5, a first GaN power device 6, a second GaN power device 7, a solder ball 2, a graphite film 3 and filling glue 4.
According to an embodiment of the invention, the surface of the substrate 1 is provided with a plurality of mounting areas, each mounting area being provided with a plurality of electrical contacts and with a connection line connecting between the respective electrical contacts.
According to the embodiment of the present invention, the driving chip 5, the first GaN power device 6, and the second GaN power device 7 are respectively mounted on the mounting regions of the surface of the substrate 1 and electrically connected to the electrical contacts in the mounting regions through the plurality of solder balls 2.
According to an embodiment of the present invention, the driver chip 5 includes a high-side channel and a low-side channel electrically connected to the first GaN power device 6 and the second GaN power device 7, respectively.
According to the embodiment of the invention, the filling adhesive 4 is filled in the gap between the driving chip 5, the first GaN power device 6 and the second GaN power device 7 and the substrate, and the filling adhesive 4 extends upwards to the periphery of the lower periphery of the driving chip 5, the first GaN power device 6 and the second GaN power device 7.
According to the embodiment of the invention, the graphite film 3 covers the substrate 1 and surrounds the filling glue 4 extending to the periphery of the lower part of the driving chip 5, the first GaN power device 6 and the second GaN power device 7 so as to realize heat conduction and electric isolation among the driving chip 5, the first GaN power device 6 and the second GaN power device 7.
According to the embodiment of the invention, the filling adhesive 4 is made of a heat conducting and electric insulating material, and the filling adhesive 4 covers each solder ball 2 so as to reduce the stress of the solder ball and improve the thermal fatigue life of the solder ball.
According to the embodiment of the invention, the filling adhesive can reduce the stress of the solder ball and prolong the thermal fatigue life of the solder ball, and can form thermal coupling among the driving chip, the first GaN power device, the second GaN power device and the graphite film, under the same simulation condition, compared with a packaging structure without the heat conduction filling adhesive, the temperature of the packaging structure using the heat conduction filling adhesive is reduced by 18 ℃, and the heat dissipation effect is improved by 18.8%.
According to the embodiment of the invention, each of the first GaN power device 6 and the second GaN power device 7 comprises a gate, a source and a drain, the output end of the high-side channel of the driving chip 5 is electrically connected with the gate of the first GaN power device 6, the output end of the low-side channel of the driving chip 5 is electrically connected with the gate of the second GaN power device 7, and the drain of the second GaN power device 7 is electrically connected with the source of the first GaN power device 6.
According to an embodiment of the present invention, the input terminal of the high-side channel of the driver chip 5 is adapted to receive a high-side digital control signal, and the input terminal of the low-side channel of the driver chip 5 is adapted to receive a low-side digital control signal.
According to the embodiment of the present invention, the drain of the first GaN power device 6 is electrically connected to the high-level voltage terminal, and the source of the second GaN power device 7 is electrically connected to the ground terminal.
According to an embodiment of the present invention, the substrate 1 is made of an epoxy glass cloth laminate.
According to the embodiment of the present invention, the graphite film 3 is attached to the surface of the substrate 1.
Fig. 3 schematically illustrates a top view of a graphite film in a GaN half-bridge power device according to an embodiment of the present invention. As shown in fig. 3, the graphite film 3 is in a hollow state, and the mounting region of the graphite film 3 avoids the mounting region on the surface of the substrate 1, that is, the regions avoiding the driver chip 5, the first GaN power device 6, the second GaN power device 7, and the solder balls 2.
According to the embodiment of the invention, the graphite film has high thermal conductivity and good electrical conductivity, and the graphite film is kept away from the regions of the driving chip, the first GaN power device, the second GaN power device and the solder balls, so that short circuit caused by contact between the graphite film and the solder balls is avoided.
According to the embodiment of the invention, the heat transferred by the GaN half-bridge power device in the heat dissipation process follows a Newton cooling equation, and the formula is as follows:
Figure BDA0003628658560000061
wherein the content of the first and second substances,
Figure BDA0003628658560000062
is heat, in units of W; h is c The heat transfer coefficient is the heat transfer coefficient, which represents the amount of heat transferred per unit area at a temperature difference of 1 deg.C, and is expressed in W/(m) 2 K); a is the heat exchange area in m 2 ；t w Is the solid temperature, t f The fluid temperature is given in units of degrees celsius.
According to the GaN half-bridge power device, the heat exchange area is increased by utilizing the heat-conducting graphite film, the temperature of the GaN half-bridge power device during high-frequency heavy current loading can be greatly reduced, the heat dissipation performance of the GaN half-bridge power device is improved, and through simulation, the temperature of the packaging structure using the heat-conducting graphite film 3 is reduced by 32.6 ℃ and the heat dissipation effect is improved by 29.6% under the same simulation condition compared with the packaging structure without the heat-conducting graphite film.
According to an embodiment of the invention, the solder balls 2 comprise solder balls of tin.
According to an embodiment of the present invention, the GaN half-bridge power device further includes a package housing 8.
Fig. 4 schematically shows a circuit schematic of a GaN half-bridge power device according to an embodiment of the present invention.
According to an embodiment of the present invention, as shown in fig. 4, a circuit of a GaN half-bridge power device includes: a driver chip 5, a first GaN power device 6 and a second GaN power device 7. The driver chip 5 includes a high-side channel electrically connected to the first GaN power device 6 and a low-side channel electrically connected to the second GaN power device 7.
According to an embodiment of the present invention, the first GaN power device 6 and the second GaN power device 7 include a gate, a source, and a drain, respectively.
According to the embodiment of the invention, a high-side channel input end HI of the driving chip 5 is used for receiving an external high-side digital control signal PWM _ H, and a high-side channel output end HOH is connected with a gate of the first GaN power device 6; the low side channel input end LI is used for receiving an external low side digital control signal PWM _ L, and the low side channel output end HOL is connected with the gate of the second GaN power device 7.
According to an embodiment of the present invention, the drain of the first GaN power device 6 is connected to the input voltage VIN, the source of the first GaN power device 6 is connected to the drain of the second GaN power device 7, and the source of the second GaN power device 7 is connected to the power ground PGND.
According to the embodiment of the invention, the driving chip D1 processes the input high-side digital control signal PWM _ H and low-side digital control signal PWM _ L through the high-side channel and the low-side channel, respectively.
Fig. 5A-5F schematically illustrate fabrication process diagrams of GaN half-bridge power devices according to embodiments of the present invention.
Referring to fig. 5A to 5F, an embodiment of the present invention further provides a method for manufacturing a GaN half-bridge power device, including:
as shown in fig. 5A, a substrate 1 is provided, the surface of the substrate 1 has a plurality of mounting areas, each of the mounting areas is provided with a plurality of electrical contacts and a connecting line connected between the corresponding electrical contacts;
as shown in fig. 5B, the driver chip 5, the first GaN power device 6 and the second GaN power device 7 are soldered to the electrical contacts of the substrate 1 through solder balls 2;
as shown in fig. 5C, the graphite film 3 is perforated at positions corresponding to the driver chip 5, the first GaN power device 6, and the second GaN power device 7;
as shown in fig. 5D, the graphite film 3 after the opening is attached to the upper surface of the substrate 1, wherein the lower edges of the driving chip 5, the first GaN power device 6 and the second GaN power device 7 and the inner edge of the corresponding opening of the graphite film have a gap;
as shown in fig. 5E, the gaps between the driving chip 5, the first GaN power device 6, and the second GaN power device 7 and the substrate 1 are filled with the filling glue 4, and extend upward to the periphery of the lower periphery of the driving chip 5, the first GaN power device 6, and the second GaN power device 7, so as to isolate the graphite film 3 from the driving chip 5, the first GaN power device 6, the second GaN power device 7, and the solder balls 2;
as shown in fig. 5F, a package case will be prepared on the graphite film 3 to package the driver chip 5, the first GaN power device 6, and the second GaN power device 7.
According to an embodiment of the present invention, the driver chip 5, the first GaN power device 6, and the second GaN power device 7 are flip-chip bonded on electrical contacts on the substrate 1.
According to an embodiment of the present invention, the driving chip 5, the first GaN power device 6, and the second GaN power device 7 are packaged using a Ball Grid Array (BGA) and the first GaN power device and the second GaN power device are packaged using a Land Grid Array (LGA) before being soldered onto the electrical contacts of the substrate 1 through the solder balls 2.
According to the embodiment of the invention, the driving chip 5, the first GaN power device 6 and the second GaN power device 7 are welded on the electric contact of the substrate 1 through the solder balls 2 to ensure that the output end of the high-side channel of the driving chip 5 is electrically connected with the gate electrode of the first GaN power device 6, the output end of the low-side channel of the driving chip 5 is electrically connected with the gate electrode of the second GaN power device 7, and the drain electrode of the second GaN power device 7 is electrically connected with the source electrode of the first GaN power device 6.
According to the embodiment of the invention, the substrate 1 is an epoxy glass cloth laminated board (FR-4), the solder balls 2 are tin solder balls, the graphite film 3 is cut in a hole opening mode, and the graphite film 3 is pasted in a pasting mode.
According to the embodiment of the invention, the filling adhesive is made of the heat conducting and electric insulating material, has the heat conducting and electric insulating properties, can be used for isolating and forming thermal coupling among the driving chip, the first GaN power device, the second GaN power device and the graphite film, and improves the heat dissipation efficiency. And because the filling adhesive covers each solder ball, the stress of the solder ball can be reduced, and the thermal fatigue life of the solder ball can be prolonged.
According to the preparation method of the GaN half-bridge power device provided by the embodiment of the invention, the substrate is radiated by the graphite film with high thermal conductivity, and heat generated in the work of the driving chip, the first GaN power device, the second GaN power device and the substrate is conducted to the heat conducting graphite film, so that the heat radiation area is increased, the heat radiation capability of the GaN half-bridge power device package is improved, and the rapid heat radiation of the device is realized.
The packaging structure in the GaN half-bridge power device provided by the invention is not only suitable for the thermal design of the packaging structure of the GaN half-bridge power device, but also suitable for the thermal design of other high-frequency high-power density small-volume packaging structures.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (9)

1. A GaN half-bridge power device, comprising:
the surface of the substrate is provided with a plurality of mounting areas, and each mounting area is provided with a plurality of electric contacts and connecting lines connected among the corresponding electric contacts;
the driving chip, the first GaN power device and the second GaN power device are respectively arranged in the mounting area and are respectively and electrically connected with the electric contact through a plurality of welding balls, and the driving chip comprises a high-side channel and a low-side channel which are respectively and electrically connected with the first GaN power device and the second GaN power device;
filling glue, wherein the filling glue is filled in gaps among the driving chip, the first GaN power device, the second GaN power device and the substrate and extends upwards to the periphery of the lower periphery of the driving chip, the first GaN power device and the second GaN power device; and
and the graphite film covers the substrate and surrounds the filling glue extending to the periphery of the lower parts of the driving chip, the first GaN power device and the second GaN power device so as to realize heat conduction and electric isolation among the driving chip, the first GaN power device and the second GaN power device.
2. The GaN half-bridge power device of claim 1, wherein the underfill is made of a thermally conductive and electrically insulating material that encapsulates each solder ball to reduce stress of the solder balls while improving thermal fatigue life of the solder balls.
3. The GaN half-bridge power device of claim 1 or 2, wherein the first GaN power device and the second GaN power device each include a gate, a source, and a drain,
the output end of the high-side channel of the driving chip is electrically connected with the grid electrode of the first GaN power device, the output end of the low-side channel of the driving chip is electrically connected with the grid electrode of the second GaN power device, and the drain electrode of the second GaN power device is electrically connected with the source electrode of the first GaN power device.
4. The GaN half-bridge power device of claim 3, wherein the input of the high-side channel of the driver chip is adapted to receive a high-side digital control signal;
the input end of the low-side channel of the driving chip is suitable for receiving a low-side digital control signal;
the drain electrode of the first GaN power device is electrically connected with the high-level voltage end;
and the source electrode of the second GaN power device is electrically connected with a grounding end.
5. The GaN half-bridge power device of claim 1, the substrate being made of an epoxy glass cloth laminate.
6. The GaN half-bridge power device of claim 1, wherein the graphite film is attached to the surface of the substrate.
7. A method of fabricating the GaN half-bridge power device of claims 1-6, comprising:
providing a substrate;
welding the driving chip, the first GaN power device and the second GaN power device to the electric contact of the substrate through the welding balls;
opening holes in the graphite film at positions corresponding to the driving chip, the first GaN power device and the second GaN power device;
attaching the perforated graphite film to the upper surface of the substrate;
filling gaps among the driving chip, the first GaN power device, the second GaN power device and the substrate with filling glue;
and preparing a packaging shell on the graphite film to package the driving chip, the first GaN power device and the second GaN power device.
8. A method of manufacturing as claimed in claim 7, wherein the driver chip, first GaN power device and second GaN power device are flip-chip bonded on electrical contacts on the substrate.
9. The manufacturing method of claim 7, wherein the driver chip is packaged using a ball grid array and the first and second GaN power devices are packaged using a grid array before the driver chip, the first GaN power devices, and the second GaN power devices are soldered onto the electrical contacts of the substrate by solder balls.
CN202210484392.8A 2022-05-06 2022-05-06 GaN half-bridge power device and preparation method thereof Pending CN114864520A (en)

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CN202210484392.8A CN114864520A (en) 2022-05-06 2022-05-06 GaN half-bridge power device and preparation method thereof

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CN114864520A true CN114864520A (en) 2022-08-05

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