CN114859440A - Optical transmission unit, and waveguide and chip including the same - Google Patents
Optical transmission unit, and waveguide and chip including the same Download PDFInfo
- Publication number
- CN114859440A CN114859440A CN202210343859.7A CN202210343859A CN114859440A CN 114859440 A CN114859440 A CN 114859440A CN 202210343859 A CN202210343859 A CN 202210343859A CN 114859440 A CN114859440 A CN 114859440A
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- Prior art keywords
- layer
- transmission unit
- optical transmission
- waveguide
- present application
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/14—Protective coatings, e.g. hard coatings
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/1204—Lithium niobate (LiNbO3)
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12085—Integrated
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12107—Grating
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Optical Integrated Circuits (AREA)
Abstract
The embodiment of the application relates to an optical transmission unit, and a waveguide and a chip comprising the same. According to some embodiments of the present application, an optical transmission unit includes: a substrate; and a light transmitting layer on the substrate; wherein the light transmission layer comprises: a lithium niobate layer; an anti-reflective layer over the lithium niobate layer; and a grating layer located on the titanium dioxide layer. Still other embodiments of the present application provide a waveguide or a chip including the above-described optical transmission unit. The optical transmission unit, the waveguide and the chip comprising the same provided by the embodiment of the application can effectively solve the problems encountered in the traditional technology.
Description
Technical Field
Embodiments of the present disclosure relate generally to the field of semiconductor technology, and more particularly, to an optical transmission unit, and a waveguide and a chip including the same.
Background
With the development of semiconductor technology, the connection technology between the chip and the optical fiber through the integrated waveguide becomes a hot point of research, the waveguide loss directly affects the characteristics of the chip, and the waveguide loss mainly includes absorption loss, return loss and the like, which become key factors restricting the development of the integrated chip. Return loss (also known as reflection) refers to the amount of light reflected by a single break point (e.g., a connector pair) in a fiber link, and for perfect transmission, the optical loss and reflected power should be zero. The existing technical scheme can not realize low-loss connection between the chip and the optical fiber.
Therefore, the present application provides an optical transmission unit, and a waveguide and a chip including the same.
Disclosure of Invention
An object of the embodiments of the present application is to provide an optical transmission unit, and a waveguide and a chip including the same, so as to achieve low loss of connection between the chip and an optical fiber through an integrated optical transmission unit.
An embodiment of the present application provides an optical transmission unit, including: a substrate; and a light transmission layer on the substrate; wherein the light transmission layer includes: a lithium niobate layer; an anti-reflection layer located over the lithium niobate layer; and a grating layer on the titanium dioxide layer.
According to some embodiments of the present application, the optical transmission unit further includes a protective layer located over the grating layer.
According to some embodiments of the application, wherein the protective layer is a silicon dioxide layer.
According to some embodiments of the application, wherein the substrate comprises a gold layer.
According to some embodiments of the present application, wherein the substrate comprises a dielectric layer.
According to some embodiments of the present application, the dielectric layer comprises a silicon dioxide layer.
According to some embodiments of the application, wherein the anti-reflective layer comprises a titanium dioxide layer.
Another embodiment of the present application provides a waveguide including the above-described light transmission unit.
Still another embodiment of the present application further provides a chip including the above optical transmission unit.
Compared with the prior art, the optical transmission unit, the waveguide and the chip comprising the optical transmission unit provided by the embodiment of the application can greatly reduce optical loss by using an anti-reflection layer.
Drawings
Fig. 1 is a schematic diagram of a structure of an optical transmission unit 100 according to some embodiments of the present application.
Fig. 2 is a schematic diagram of another structure of the optical transmission unit 100 according to some embodiments of the present application.
Detailed Description
In order to better understand the spirit of the embodiments of the present application, the following further description is given in conjunction with some preferred embodiments of the present application.
Embodiments of the present application will be described in detail below. Throughout the specification, the same or similar components and components having the same or similar functions are denoted by like reference numerals. The embodiments described herein with respect to the figures are illustrative in nature, are diagrammatic in nature, and are used to provide a basic understanding of the present application. The embodiments of the present application should not be construed as limiting the present application.
The optical transmission unit, the waveguide and the chip comprising the same effectively reduce optical loss by using the anti-reflection coating.
Fig. 1 is a schematic diagram of a structure of an optical transmission unit 100 according to some embodiments of the present application.
As shown in fig. 1, the optical transmission unit 100 includes a substrate 101; and a light transmission layer 102 on the substrate 101; wherein light transmitting layer 102 comprises lithium niobate layer 104; an antireflection layer 105 located over the lithium niobate layer 104; and a grating layer 106 on the titanium dioxide layer 105.
When light passes through the lithium niobate layer, about 1% of the light is absorbed by the lithium niobate thin film layer, and about 8% of the light is reflected; and after the anti-reflection layer is arranged on the lithium niobate layer, the reflected light is greatly reduced.
For example, a titanium dioxide layer is arranged on a lithium niobate layer, only 1% of light is reflected, and light transmission loss is greatly reduced. Titanium dioxide is a nanoparticle having transparency, for example, titanium dioxide of anatase type has very good light transmittance and can be used as an anti-reflective coating.
Fig. 2 is another schematic diagram of an optical transmission unit 100 according to some embodiments of the present application.
According to some embodiments of the present application, as shown in fig. 2, the optical transmission unit 100 may further include a protective layer 107 located on the grating layer 106, for example, the protective layer is a silicon dioxide layer.
The optical transmission unit provided by the application can be used as the connection between the chip and the optical fiber through the integrated waveguide, and can be widely applied to the industries of optical communication, optical chips and optical quantum chips.
The optical transmission unit 100 proposed in the present application can be manufactured by the following method:
the method comprises the following steps: depositing metal layers (not shown in the figure) in sequence on the substrate 101 by physical vapor deposition PVD magnetron sputtering, wherein the substrate may be a silicon substrate, and the metal layers may be a chromium layer about 10nm thick and a gold layer about 30nm thick;
step two: depositing a dielectric layer (not shown) such as a silicon oxide layer on the gold layer by plasma enhanced chemical vapor deposition PECVD, and then polishing by chemical mechanical polishing CMP to flatten the dielectric layer to about 30nm thick;
step three: bonding the lithium niobate layer and the dielectric layer, wherein the temperature is about 220 ℃ and the duration time is about 8 hours during bonding, and the annealing temperature is about 400 ℃ and the duration time is about 2 hours; he ions were implanted into the lithium niobate layer, the implanted layer was fractured, and then the lithium niobate layer was planarized by CMP to form a lithium niobate layer 104 about 600nm thick.
Step four: an antireflection layer 105, such as a titanium dioxide layer, is prepared on the lithium niobate layer 104 to a thickness of about 20 nm.
Step five: preparing a silicon layer about 600nm thick on the titanium dioxide layer 105; after a polysilicon grating etching area is defined by electron beam lithography EBL, exposed polysilicon is etched by using an inductively coupled plasma ICP etching apparatus through a mask of a photoresist to form a grating layer 106.
Step six: a protective layer 107 is deposited by PECVD over the antireflective layer 105, encapsulating the grating 107 layer.
According to some embodiments of the present application, the titanium dioxide layer is prepared as follows:
s1: immersing the lithium niobate layer 104 into the TiO 2 Immersing in the sol solution for about 30 s;
s2: slowly drawing the sample at a speed of about 2 mm/s;
s3: then drying at 100 deg.C for 1 hr, TiO 2 The thickness is about 20 nm;
s4: annealing at about 500 deg.C for about 4 hours to form a titanium dioxide anti-reflective layer;
according to other embodiments of the present application, the titanium dioxide layer may be deposited by magnetron sputtering PVD on the lithium niobate waveguide layer 2 Thereby forming the composite material.
It should be understood that although the anti-reflection layer in the above embodiments is titanium dioxide, this is only for illustrating the exemplary embodiments of the light transmission unit provided in the present application and the waveguide and chip including the same, and should not be construed as limiting the scope of protection of the present application. According to other embodiments of the present application, other similar materials may also be used for the optical transmission unit and the waveguide and chip comprising the same.
Further embodiments of the present application also include a waveguide or chip comprising the above-described optical transmission unit.
The optical transmission unit, the waveguide comprising the optical transmission unit and the chip realize low-loss connection between the chip and the optical fiber through the integrated waveguide.
The technical content and technical features of the present application have been disclosed as above, however, those skilled in the art may still make various substitutions and modifications based on the teaching and disclosure of the present application without departing from the spirit of the present application. Therefore, the protection scope of the present application should not be limited to the disclosure of the embodiments, but should include various alternatives and modifications without departing from the scope of the present application, which is covered by the claims of the present patent application.
Claims (9)
1. An optical transmission unit, comprising:
a substrate; and
a light transmitting layer on the substrate;
wherein the light transmission layer comprises:
a lithium niobate layer;
an anti-reflection layer located over the lithium niobate layer; and
and the grating layer is positioned on the titanium dioxide layer.
2. The light transfer unit of claim 1, further comprising a protective layer over the grating layer.
3. The light transmitting unit according to claim 2, wherein the protective layer is a silicon dioxide layer.
4. The light transfer unit of claim 1, wherein the substrate comprises a layer of gold.
5. The light transmitting unit of claim 1, wherein the substrate comprises a dielectric layer.
6. The light transmitting unit of claim 5, wherein the dielectric layer comprises a silicon dioxide layer.
7. The light transmitting unit of claim 1, wherein the anti-reflective layer comprises a layer of titanium dioxide.
8. A waveguide comprising the optical transmission unit according to any one of claims 1 to 7.
9. A chip comprising the optical transmission unit according to any one of claims 1-7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210343859.7A CN114859440A (en) | 2022-04-02 | 2022-04-02 | Optical transmission unit, and waveguide and chip including the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210343859.7A CN114859440A (en) | 2022-04-02 | 2022-04-02 | Optical transmission unit, and waveguide and chip including the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114859440A true CN114859440A (en) | 2022-08-05 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210343859.7A Pending CN114859440A (en) | 2022-04-02 | 2022-04-02 | Optical transmission unit, and waveguide and chip including the same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114859440A (en) |
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2022
- 2022-04-02 CN CN202210343859.7A patent/CN114859440A/en active Pending
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